HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0166-0200Z (Previous: ADE-208-121A) Rev.2.00 Jan.06.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. Mark Package Code HZS-L Series Type No. MHD Pin Arrangement 7 B 1 2 2 Type No. Cathode band 1. Cathode 2. Anode Rev.2.00, Jan.06.2003, page 1 of 6 HZS-L Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 200 °C Storage temperature Tstg –55 to +175 °C Reverse Current Dynamic Resistance Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)* 1 Test Condition IR (µA) Test Condition rd (Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZS6L A1 5.2 5.5 0.5 1 2.0 150 0.5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 80 0.5 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 60 0.5 C2 6.0 6.3 C3 6.1 6.4 A1 6.3 6.6 60 0.5 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7 C3 7.5 7.9 HZS7L Note: 1. Tested with DC. Rev.2.00, Jan.06.2003, page 2 of 6 0.5 1 3.5 HZS-L Series Zener Voltage VZ (V)* Type Grade HZS9L HZS11L HZS12L HZS15L HZS16L Note: Min Reverse Current Dynamic Resistance Test Condition IR (µA) Test Condition rd (Ω) Test Condition Max IZ (mA) Max VR (V) Max IZ (mA) 0.5 1 6.0 60 0.5 0.5 1 8.0 80 0.5 0.5 1 10.5 80 0.5 0.5 1 13.0 80 0.5 0.5 1 14.0 80 0.5 1 A1 7.7 8.1 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5 C3 9.3 9.7 A1 9.5 9.9 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 C1 10.9 11.3 C2 11.1 11.6 C3 11.4 11.9 A1 11.6 12.1 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 C1 13.2 13.7 C2 13.5 14.0 C3 13.8 14.3 1 14.1 14.7 2 14.5 15.1 3 14.9 15.5 1 15.3 15.9 2 15.7 16.5 3 16.3 17.1 1. Tested with DC. Rev.2.00, Jan.06.2003, page 3 of 6 HZS-L Series Zener Voltage VZ (V)* Type HZS18L HZS20L HZS22L HZS24L HZS27L HZS30L HZS33L HZS36L Grade Min Reverse Current Dynamic Resistance Test Condition IR (µA) Test Condition rd (Ω) Test Condition Max IZ (mA) Max VR (V) Max IZ (mA) 0.5 1 15.0 80 0.5 0.5 1 18.0 100 0.5 0.5 1 20.0 100 0.5 0.5 1 22.0 120 0.5 0.5 1 24.0 150 0.5 0.5 1 27.0 200 0.5 0.5 1 30.0 250 0.5 0.5 1 33.0 300 0.5 1 1 16.9 17.7 2 17.5 18.3 3 18.1 19.0 1 18.8 19.7 2 19.5 20.4 3 20.2 21.1 1 20.9 21.9 2 21.6 22.6 3 22.3 23.3 1 22.9 24.0 2 23.6 24.7 3 24.3 25.5 1 25.2 26.6 2 26.2 27.6 3 27.2 28.6 1 28.2 29.6 2 29.2 30.6 3 30.2 31.6 1 31.2 32.6 2 32.2 33.6 3 33.2 34.6 1 34.2 35.7 2 35.3 36.8 3 36.4 38.0 Notes: 1. Tested with DC. 2. Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L Rev.2.00, Jan.06.2003, page 4 of 6 HZS-L Series Main Characteristic 10–4 HZS36-2L HZS30-2L HZS24-2L HZS20-2L HZS16-2L HZS12B2L Zener Current IZ (A) 10–3 HZS9B2L HZS6B2L 10–2 10–5 10–6 10–7 10–8 0 5 10 15 20 25 30 35 40 Zener Voltage VZ (V) 50 %/°C 0.08 40 0.06 30 0.04 20 mV/°C 0.02 10 0 0 −0.02 −10 −0.04 −20 −0.06 −30 −0.08 −40 −0.10 0 5 −50 10 15 20 25 30 35 40 500 l 2.5 mm Power Dissipation Pd (mW) 0.10 Zener Voltage Temperature Coefficient γZ (mV/°C) Zener Voltage Temperature Coefficient γZ (%/°C) Fig.1 Zener current vs. Zener voltage 3 mm 400 Printed circuit board 100 × 180 × 1.6t mm Quality: paper phenol 300 l = 5 mm 200 l = 10 mm (Publication value) 100 0 0 50 100 150 200 Zener Voltage VZ (V) Ambient Temperature Ta (°C) Fig.2 Temperature Coefficient vs. Zener voltage Fig.3 Power Dissipation vs. Ambient Temperature Rev.2.00, Jan.06.2003, page 5 of 6 HZS-L Series Package Dimensions As of January, 2003 Unit: mm 2.4 Max 26.0 Min φ 0.4 φ 2.0 26.0 Min Package Code JEDEC JEITA Mass (reference value) Rev.2.00, Jan.06.2003, page 6 of 6 MHD Conforms — 0.084 g Sales Strategic Planning Div. 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