3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) IDT71V416VS IDT71V416VL Features Description ◆ The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs. The IDT71V416 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package. ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 16 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise. Equal access and cycle times – Commercial and Industrial: 10/12/15ns One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly LVTTL-compatible Low power consumption via chip deselect Upper and Lower Byte Enable Pins Single 3.3V power supply Available in 44-pin, 400 mil plastic SOJ package and a 44pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package. Functional Block Diagram OE Output Enable Buffer A0 - A17 Address Buffers Row / Column Decoders 8 CS Chip Select Buffer 8 4,194,304-bit Memory Array WE 16 Write Enable Buffer Sense Amps and Write Drivers 8 8 High Byte Output Buffer High Byte Write Buffer Low Byte Output Buffer Low Byte Write Buffer 8 I/O 15 8 I/O 8 8 I/O 7 8 I/O 0 BHE Byte Enable Buffers BLE 6478 drw 01 SEPTEMBER 2004 1 ©2004 Integrated Device Technology, Inc. DSC-6478/00 IDT71V416VS, IDT71V416VL 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges Pin Configurations - SOJ/TSOP A0 A1 A2 A3 A4 CS I/O 0 I/O 1 I/O 2 I/O 3 VDD VSS I/O 4 I/O 5 I/O 6 I/O 7 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 SO44-1 SO44-2 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 Pin Configurations - 48 BGA A17 A16 A15 OE BHE BLE I/O 15 I/O 14 I/O 13 I/O 12 VSS VDD I/O 11 I/O 10 I/O 9 I/O 8 NC* A14 A13 A12 1 2 3 4 5 6 A BLE OE A0 A1 A2 NC B I/O0 BHE A3 A4 CS I/O8 C I/O1 I/O2 A5 A6 I/O10 I/O9 D VSS I/O3 A17 A7 I/O11 VDD E VDD I/O4 NC A16 I/O12 VSS F I/O6 I/O5 A14 A15 I/O13 I/O14 G I/O7 NC A12 A13 WE I/O15 H NC A8 A9 A10 A11 NC 6478 tbl 11 A11 A10 6478 drw 02 *Pin 28 can either be a NC or connected to Vss SOJ Capacitance Top View (TA = +25°C, f = 1.0MHz) Pin Descriptions Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 7 pF CI/O I/O Capacitance VOUT = 3dV 8 A0 - A17 Address Inputs Input CS Chip Select Input WE Write Enable Input OE Output Enable Input BHE High Byte Enable Input 48 BGA Capacitance BLE Low Byte Enable Input (TA = +25°C, f = 1.0MHz) I/O0 - I/O15 Data Input/Output I/O Symbol Parameter(1) Conditions Max. Unit VDD 3.3V Power Pwr CIN Input Capacitance VIN = 3dV 6 pF VSS Ground Gnd CI/O I/O Capacitance V OUT = 3dV 7 pF 6478 tbl 02 6478 tbl 01 pF 6478 tbl 02b NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. 6.42 2 IDT71V416VS, IDT71V416VL 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges Absolute Maximum Ratings(1) Symbol VDD VIN, VOUT Rating Supply Voltage Relative to VSS Terminal Voltage Relative to VSS Recommended Operating Temperature and Supply Voltage Value Unit -0.5 to +4.6 V Grade Temperature VSS V DD -0.5 to V DD+0.5 V Commercial 0OC to +70OC 0V See Below 0V See Below TBIAS Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -55 to +125 o C O Industrial O –40 C to +85 C 6478 tbl 05 PT Power Dissipation 1 W IOUT DC Output Current 50 mA 6478 tbl 04 Recommended DC Operating Conditions Symbol NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Parameter Min. Typ. Max. Unit 3.0 3.3 3.6 V 0 0 0 V V VDD Supply Voltage VSS Ground VIH Input High Voltage 2.0 ____ VDD+0.3(1) VIL Input Low Voltage -0.3(2) ____ 0.8 V 6478 tbl 06 NOTES: 1. VIH (max) = VDD + 1.0V a.c. (pulse width less than tCYC/2) for I < 20 mA, once per cycle. 2. VIL (min) = –1.0V a.c. (pulse width less than tCYC/2) for I < 20 mA, once per cycle. Truth Table(1) CS OE WE BLE BHE I/O0-I/O7 I/O8-I/O15 Function H X X X X High-Z High-Z Deselected - Standby L L H L H DATAOUT High-Z Low Byte Read L L H H L High-Z DATAOUT High Byte Read L L H L L DATAOUT DATAOUT Word Read L X L L L DATAIN DATAIN Word Write L X L L H DATAIN High-Z Low Byte Write L X L H L High-Z DATAIN High Byte Write L H H X X High-Z High-Z Outputs Disabled L X X H H High-Z High-Z Outputs Disabled 6478 tbl 03 NOTE: 1. H = VIH, L = VIL, X = Don't care. 6.42 3 IDT71V416VS, IDT71V416VL 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges DC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges) IDT71V416 Symbol Parameter Test Conditions Min. Max. Unit |ILI| Input Leakage Current VCC = Max., VIN = VSS to VDD ___ 5 µA |ILO| Output Leakage Current VDD = Max., CS = VIH, VOUT = VSS to V DD ___ 5 µA IOL = 8mA, VDD = Min. ___ 0.4 V 2.4 ___ V VOL Output Low Voltage VOH Output High Voltage IOH = -4mA, VDD = Min. 6478 tbl 07 DC Electrical Characteristics(1, 2) (VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V) 71V416S/L10 Symbol ICC Parameter Com'l. Dynamic Operating Current CS < VLC, Outputs Open, V DD = Max., f = fMAX(4) S Ind. 71V416S/L12 (5) 71V416S/L15 Com'l. Ind. Com'l. Ind. Unit mA Max. 200 200 180 180 170 170 Max. 180 — 170 170 160 160 Typ.(3) 90 — 80 — 70 — L ISB ISB1 Dynamic Standby Power Supply Current CS > VHC, Outputs Open, VDD = Max., f = fMAX(4) S Max. 70 70 60 60 50 50 L Max. 50 — 45 45 40 40 Full Standby Power Supply Current (static) CS > VHC, Outputs Open, VDD = Max., f = 0(4) S Max. 20 20 20 20 20 20 L Max. 10 — 10 10 10 10 mA mA 6478 tbl 08 IDT71V416S/71V416L NOTES: 1. All values are maximum guaranteed values, except the typical values. 2. All inputs switch between 0.2V (Low) and VDD -0.2V (High). 3. Typical values are measured at 3.3V, 25oC and with equal read and write cycles. This parameter is guaranteed by device characterization, but not production tested. 4. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing. 5. Standard power 10ns (S10) speed grade only. AC Test Loads 3.3V +1.5V 320Ω 50Ω I/O DATA OUT Z0 = 50Ω 5pF* 30pF 350Ω 6478 drw 03 6478 drw 04 Figure 1. AC Test Load *Including jig and scope capacitance. Figure 2. AC Test Load (for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ) 7 • 6 ∆tAA, tACS (Typical, ns) 5 4 AC Test Conditions Input Pulse Levels • 3 • 2 GND to 3.0V Input Rise/Fall Times 1.5ns Input Timing Reference Levels 1.5V Output Reference Levels 1.5V • 1 • • • 8 20 40 60 80 100 120 140 160 180 200 CAPACITANCE (pF) AC Test Load 6478 drw 05 Figure 3. Output Capacitive Derating Figures 1,2 and 3 6478 tbl 09 6.42 4 IDT71V416VS, IDT71V416VL 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges AC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges) 71V416S/L10(2) Symbol Parameter 71V416S/L12 71V416S/L15 Min. Max. Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 10 ____ 12 ____ 15 ____ ns tAA Address Access Time ____ 10 ____ 12 ____ 15 ns tACS Chip Select Access Time ____ 10 ____ 12 ____ 15 ns 4 ____ 4 ____ 4 ____ ns 5 ____ 6 ____ 7 ns (1) Chip Select Low to Output in Low-Z tCLZ (1) tCHZ Chip Select High to Output in High-Z ____ tOE Output Enable Low to Output Valid ____ 5 ____ 6 ____ 7 ns tOLZ(1) Output Enable Low to Output in Low-Z 0 ____ 0 ____ 0 ____ ns ____ 5 ____ 6 ____ 7 ns 4 ____ 4 ____ 4 ____ ns ____ 5 ____ 6 ____ 7 ns 0 ____ 0 ____ 0 ____ ns (1) tOHZ Output Enable High to Output in High-Z tOH Output Hold from Address Change tBE Byte Enable Low to Output Valid (1) Byte Enable Low to Output in Low-Z (1) Byte Enable High to Output in High-Z ____ 5 ____ 6 ____ 7 ns tWC Write Cycle Time 10 ____ 12 ____ 15 ____ ns tAW Address Valid to End of Write 8 ____ 8 ____ 10 ____ ns tCW Chip Select Low to End of Write 8 ____ 8 ____ 10 ____ ns 8 ____ 8 ____ 10 ____ ns 0 ____ 0 ____ ns 0 ____ 0 ____ ns ns tBLZ tBHZ WRITE CYCLE Byte Enable Low to End of Write tBW tAS Address Set-up Time 0 ____ tWR Address Hold from End of Write 0 ____ 8 ____ 8 ____ 10 ____ 6 ____ 7 ____ ns tWP Write Pulse Width tDW Data Valid to End of Write 5 ____ tDH Data Hold Time 0 ____ 0 ____ 0 ____ ns tOW(1) Write Enable High to Output in Low-Z 3 ____ 3 ____ 3 ____ ns Write Enable Low to Output in High-Z ____ 6 ____ 7 ____ 7 ns (1) tWHZ 6478 tbl 10 NOTE: 1. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested. 2. Low power 10ns (L10) speed 0ºC to +70ºC temperature range only. Timing Waveform of Read Cycle No. 1(1,2,3) tRC ADDRESS tAA tOH tOH DATAOUT DATAOUT VALID PREVIOUS DATAOUT VALID NOTES: 1. WE is HIGH for Read Cycle. 2. Device is continuously selected, CS is LOW. 3. OE, BHE, and BLE are LOW. 6478d06 6.42 5 IDT71V416VS, IDT71V416VL 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges Timing Waveform of Read Cycle No. 2 (1) tRC ADDRESS tOH tAA OE tOHZ (3) tOE tOLZ CS tCLZ (3) (3) tACS (2) tCHZ (3) BHE, BLE tBE tBLZ (2) tBHZ (3) (3) DATAOUT DATAOUT VALID 6478 drw 07 NOTES: 1. WE is HIGH for Read Cycle. 2. Address must be valid prior to or coincident with the later of CS, BHE, or BLE transition LOW; otherwise tAA is the limiting parameter. 3. Transition is measured ±200mV from steady state. Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,4) tWC ADDRESS tAW CS tCW (2) tCHZ (5) tBW BHE, BLE tWR WE tAS tWHZ (5) (5) tOW DATAOUT tBHZ tWP (3) PREVIOUS DATA VALID (5) DATA VALID tDW DATAIN tDH DATAIN VALID 6478 drw 08 NOTES: 1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE. 2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as short as the specified tWP. 3. During this period, I/O pins are in the output state, and input signals must not be applied. 4. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state. 5. Transition is measured ±200mV from steady state. 6.42 6 IDT71V416VS, IDT71V416VL 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,3) tWC ADDRESS tAW CS tCW (2) tAS tBW BHE, BLE tWP tWR WE DATAOUT tDW DATAIN tDH DATAIN VALID 6478 d09 Timing Waveform of Write Cycle No. 3 (BHE, BLE Controlled Timing)(1,3) tWC ADDRESS tAW CS tCW (2) tAS tBW BHE, BLE tWP tWR WE DATAOUT tDW DATAIN tDH DATAIN VALID 6478 d10 NOTES: 1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE. 2. During this period, I/O pins are in the output state, and input signals must not be applied. 3. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state. 6.42 7 IDT71V416VS, IDT71V416VL 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges Ordering Information IDT 71V416 Device Type X X XX XXX Power Speed Package X X Process/ Temperature Range Blank I Commercial (0°C to +70°C) Industrial (-40°C to +85°C) G Restricted hazardous substance device Y PH BE 44-pin, 400-mil SOJ (SO44-1) 44-pin TSOP Type II (SO44-2) 48 Ball Grid Array 10* 12 15 Speed in nanoseconds S L Standard Power Low Power V V die stepping * Commercial only for low power 10ns (L10) speed grade. 6478 drw 11a 6.42 8 IDT71V416VS, IDT71V416VL 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges Datasheet Document History 09/30/04 Released datasheet CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 9 for Tech Support: [email protected] 800-544-7726