IDT IDT7MMV4101S12BGI

128K x 24 Three Megabit
3.3V CMOS Static RAM
Features
◆
Description
High density 3 megabit 3.3V static RAM
Low profile 119 lead, 14mm x 22mm
BGA (Ball Grid Array)
Fast RAM access times: 10,12,15ns
Single 3.3V power supply
Multiple Vcc & GND pins for maximum noise immunity
Inputs/outputs directly LVTTL compatible
Commercial (0O C to +70O C) Industrial (-40O C to +85O C)
temperature options
– Commercial: 10 / 12 / 15 ns
– Industrial: 12 / 15 ns
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IDT7MMV4101
The IDT7MMV4101 is a three megabit static RAM constructed on an
multilayer laminate substrate using three 3.3V, 128K x 8 (IDT71V124)
static RAMS encapsulated in a Ball Grid Array (BGA).
The IDT7MMV4101 is packaged in a plastic BGA. The BGA configuration allows 119 leads to be placed on a package 14mm by 22mm. At a
maximum of 3.5mm high, this low-profile surface mount package is ideal
for ultra dense systems.
All inputs and outputs of the IDT7MMV4101 are LVTTL compatible and
operate from a single 3.3V supply. Full asynchronous circuitry requires
no clocks or refresh for operation and provides equal access and cycle
times for ease of use.
Functional Block Diagram
Pin Names
I/O0 - 23
Data Inputs/Outputs
A0 - 16
Addresses
CS
Chip Select
WE
Write Enable
OE
Output Enable
VCC
Power
GND
Ground
NC
No Connect
A0-16
CS
WE
OE
17
128K x 8
SRAM
128K x 8
SRAM
128K x 8
SRAM
8
8
I/O0-7
8
,
I/O16-23
I/O8-15
4083 drw 01
4083 tbl 01
Pin Configuration
NC
NC
I/O0
I/O1
I/O2 I/O3
6 A4
A8
NC
VCC
GND VCC GND VCC GND VCC GND VCC GND VCC
NC
A12 A16
5 A3
A7
NC
GND VCC GND VCC GND VCC GND VCC GND VCC GND
NC
A11 A15
4 A2
CS
NC
GND
GND GND GND GND GND GND GND GND GND GND
NC
WE OE
3 A1
A6
NC
GND VCC GND VCC GND VCC GND VCC GND VCC GND
NC
A10 A14
2 A0
A5
NC
VCC
GND VCC GND VCC GND VCC GND VCC GND VCC
NC
A9
7
1 NC NC
A
B
I/O4 I/O5 NC
I/O6 I/O7 I/O8 I/O9 I/O10
I/O11 NC
NC
A13
I/O12 I/O13 I/O14 I/O15 I/O16 I/O17 NC I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 NC NC
C
D
E
F
G
H
J
K
Top View
L
M
N
P
R
T
U
4083 drw 02
JANUARY 2003
1
©2003 Integrated Device Technology, Inc.
DSC-4083/05
,
IDT7MMV4101
128K x 24 Three Megabit 3.3V CMOS Static RAM
Commercial and Industrial Temperature Ranges
Truth Table
Capacitance (TA = +25°C, f = 1.0MHz)
Symbol
Parameter
Conditions
Max.
Unit
Mode
CS
OE
WE
I/O
Power
VIN = 3dV
20
pF
Standby
H
X
X
High-Z
Standby
VOUT = 3dV
10
pF
Read
L
L
H
DATA OUT
Active
4083 tbl 02
Write
L
X
L
DATA IN
Active
Outputs Disabled
L
H
H
High-Z
Active
(1)
CIN
Input Capacitance
CI/O
I/O Capacitance
NOTE:
1. This parameter is guaranteed by design but not tested.
4083 tbl 04
Absolute Maximum Ratings(1)
Recommended DC Operating
Conditions
Symbol
Symbol
VCC
Parameter
Min.
Typ.
Max.
Unit
VCC(1)
Supply Voltage
3.15
3.3
3.6
V
VCC(2)
Supply Voltage
3.0
3.3
3.6
V
GND
Ground
0
0
0
V
VIH
Input High Voltage
2.0
____
VCC + 0.3(4)
V
VIL
Input Low Voltage
-0.3(3)
____
0.8
V
NOTES:
1. For 7MMV4101S10BG only.
2. For all speed grades except 7MMV4101S10BG.
3. VIL (min) = –1.5V for pulse width less than 5ns, once per cycle.
4. VIH (max) = Vcc + 1.5V for pulse width less than 5ns, once per cycle.
VTERM
4083 tbl 03
Rating
Supply Voltage
Relative to GND
Commercial
Industrial
Unit
-0.5 to +4.6
-0.5 to +4.6
V
Terminal Voltage with -0.5 to VCC+0.5 -0.5 to VCC+0.5
Respect to GND
V
TA
Operating
Temperature
0 to +70
-40 to +85
°C
TBIAS
Temperature
Under Bias
-10 to +85
-10 to +85
°C
TSTG
Storage Temperature
-55 to +125
-55 to +125
°C
IOUT
DC Output Current
50
50
mA
4083 tbl 05
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
DC Electrical Characteristics (VCC = 3.3V ±10%)
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Input Leakage Current
V CC = Max., VIN = GND to V CC
____
15
µA
IILOI
Output Leakage Current
V CC = Max., CS > VIH, VOUT = GND to V CC,
____
5
µA
VOL
Output Low Voltage
IOL = 8mA, VCC = Min.
____
0.4
V
VOH
Output High Voltage
IOH = -4mA, VCC = Min.
2.4
____
IILII
V
4083 tbl 06
Symbol
Parameter
Test Condition
-10(1)
-12
-15
Max.
Max.
Max.
Unit
ICC
Dynamic Operating
Current
VCC = Max., CS < VIL,
f = fMAX, Outputs Open
295
275
255
mA
ISB
Standby Power
Supply Current
VCC = Max., CS > VIH,
f = fMAX, Outputs Open
95
85
85
mA
ISB1
Full Standby Power
Supply Current
CS > VCC - 0.2V, f =0
VIN > VCC - 0.2V or < 0.2V
10
10
10
mA
4083 tbl 07
NOTES:
1. Commercial temperature only, Vcc = -5% to +10%.
2
IDT7MMV4101
128K x 24 Three Megabit 3.3V CMOS Static RAM
Commercial and Industrial Temperature Ranges
AC Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
3ns
Input Timing Reference Levels
Output Reference Levels
1.5V
1.5V
Output Load
See Figures 1 and 2
4083 tbl 08
+3.3 V
+3.3 V
298 Ω
298 Ω
DATA
OUT
DATA
OUT
216 Ω
216 Ω
30 pF
,
5 pF*
4083 drw 03
Figure 1. Output Load
Figure 2. Output Load
(for tOLZ, tOHZ, tCHZ, tCLZ, tWHZ, tOW )
* Includes scope and jig.
6.42
3
IDT7MMV4101
128K x 24 Three Megabit 3.3V CMOS Static RAM
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics (2)
(VCC = 3.3V ±10%)
-10(3)
Symbol
Parameter
-12
-15
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
10
____
12
____
15
____
ns
tAA
Address Access Time
____
10
____
12
____
15
ns
tACS
Chip Select Access Time
____
10
____
12
____
15
ns
tCLZ(1)
Chip Select to Output in Low-Z
3
____
3
____
3
____
ns
____
4
____
6
____
7
ns
tOE
Output Enable to Output Valid
tOLZ(1)
Output Enable to Output in Low-Z
0
____
0
____
0
____
ns
tCHZ(1)
Chip Deselect to Output in High-Z
____
5
____
6
____
7
ns
tOHZ(1)
Output Disable to Output in High-Z
____
5
____
6
____
7
ns
tOH
Output Hold from Address Change
3
____
3
____
3
____
ns
tPU(1)
Chip Select to Power-Up Time
0
____
0
____
0
____
ns
tPD(1)
Chip Deselect to Power-Down Time
____
10
____
12
____
15
ns
Write Cycle Time
10
____
12
____
15
____
ns
10
____
12
____
ns
Write Cycle
tWC
tCW
Chip Select to End-of-Write
8
____
tAW
Address Valid to End-of-Write
8
____
10
____
12
____
ns
tAS
Address Set-up Time
0
____
0
____
0
____
ns
8
____
10
____
12
____
ns
0
____
0
____
0
____
ns
____
5
____
5
____
5
ns
tWP
tWR
tWHZ(1)
Write Pulse Width
Write Recovery Time
Write Enable to Output in High-Z
tDW
Data to Write Time Overlap
6
____
6
____
7
____
ns
tDH
Data Hold from Write Time
0
____
0
____
0
____
ns
3
____
3
____
3
____
ns
(1)
tOW
Output Active from End-of-Write
4083 tbl 09
NOTES:
1. This parameter is guaranteed by design but not tested.
2. These specifications are for the individual 71V124 Static RAMs.
3. Commercial temperature only, VCC = -5% to +10%.
4
IDT7MMV4101
128K x 24 Three Megabit 3.3V CMOS Static RAM
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle No. 1(1)
tRC
ADDRESS
tAA
OE
tOE
CS
tOLZ
(5)
,
tACS(3)
tCLZ
tOHZ (5)
(5)
tCHZ (5)
HIGH IMPEDANCE
DATAOUT
.
DATAOUT VALID
4083 drw 04
Timing Waveform of Read Cycle No. 2(1,2,4)
tRC
ADDRESS
tAA
tOH
DATAOUT
tOH
PREVIOUS DATAOUT VALID
DATAOUT VALID
4083 drw 05
NOTES:
1. WE is HIGH for Read Cycle.
2. Device is continuously selected, CS is LOW.
3. Address must be valid prior to or coincident with the later of CS transition LOW; otherwise tAA is the limiting parameter.
4. OE is LOW.
5. Transition is measured ±200mV from steady state.
6.42
5
.
IDT7MMV4101
128K x 24 Three Megabit 3.3V CMOS Static RAM
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,4,5)
tWC
ADDRESS
tAW
CS
tWP
tAS
(3)
tWR
WE
tWHZ
tOW
(5)
(5)
tCHZ
(5)
HIGH IMPEDANCE
(4)
DATAOUT
(4)
tDW
DATAIN
tDH
DATAIN VALID
4083 drw 06
.
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1, 4)
tWC
ADDRESS
tAW
CS
tAS
(3)
tCW
tWR
WE
tDW
DATAIN
tDH
DATAIN VALID
4083 drw 07
NOTES:
1. A write occurs during the overlap of a LOW CS and a LOW WE.
2. OE is continuously HIGH. During a WE controlled write cycle with OE LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and
data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse
is the specified tWP.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high impedance state. CS must be active during the tCW
write period.
5. Transition is measured ±200mV from steady state.
6
.
IDT7MMV4101
128K x 24 Three Megabit 3.3V CMOS Static RAM
Commercial and Industrial Temperature Ranges
Package Dimensions
20.32 Ref
22.0 + 0.1
Q P
O N
M L
K
J
I
H
G
F
E
D
C
B A
7
6
5
14.00 + 0.1
4
3
7.62 Ref
,
2
1
3.19
REF
1.27 Typ
0.84
REF
TOP VIEW
BOTTOM VIEW
2.15 Nom.
2.36 Max
4083 drw 08
NOTES:
1. All dimensions are in mm.
Ordering Information
IDT
XXXXX
X
X
X
X
Device
Type
Power
Speed
Package
Process/
Temperature
Range
I
Blank
Industrial (-40°C to +85°C)
Commercial (0°C to +70°C)
BG
119 lead BGA (Ball Grid Array)
10
12
15
Speed in Nanoseconds
Commercial Temp Only
Commercial and Industrial Temp
Commercial and Industrial Temp
S
,
Standard Power
7MMV4101 3 Megabit Static RAM
4083 drw 09
6.42
7
IDT7MMV4101
128K x 24 Three Megabit 3.3V CMOS Static RAM
Commercial and Industrial Temperature Ranges
Datasheet History
09/18/00
Pg. 2
01/07/03
Add datasheet history
Reduce ICC, ISB, and ISB1 to reflect K step die shrink
Changed datasheet from Prelininary to final release
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The IDT logo is a registered trademark of Integrated Device Technology, Inc.
8
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