TECHNICAL DATA IC for AC/DC Converter with built–in Power DMOS Transistor with Operating Frequency 132 ± 8 kHz IK3466 Functional equivalent of TNY266 (Power Integrations) Description IK3466 is IC for AC/DC converter with build–in power switch with operating frequency 132 ± 8 kHz realized on the base of high-voltage BiCDMOS process. IC performs driving of power built in MOSFET switch, quantity of energy transferred to load is regulated by means of MOSFET on-time. So output voltage practically doesn’t depend from load. The IC is purposed for adapter battery chargers of the mobile phones, reserve power supply of PC, TV-sets, ACadapters, electrical equipment control units, Integrated Services Digital Network (ISDN) or Digital Subscriber Line (DSL) network termination. ORDERING INFORMATION IK3466N Plastic IK3466D SOIC ORDERING INFORMATION Device IK3466N IK3466D IK3466DT Operating Temperature Range Package Packing ТА = -40… + 125 С DIP-8 SOP-8 SOP-8 Tube Tube Tape& Reel Features Programmable line under-voltage detect circuit prevents power on/off glitches and minimizes quantity of external components 132 kHz operation frequency High output voltage stability Simple ON/OFF control, no loop compensation needed No load consumption < 50 mW with bias winding and < 250 mW without bias winding at 265 V (AC) input High input (supply) voltage makes IC ideal for charger applications High bandwidth provides fast turn on with no overshoot Built-in current limit and thermal protection circuits provide high safety Built-in automatic restart circuit provides short circuit and open loop protection Undervoltage detection function Pin Configuration 2012, April Ver. 00 IK3466 BYPASS 01 240uA G1 DRAIN Regulator 5,8 V 03 Line under voltage 50uA G2 Error A3 + 1 Autorestart counter A7 - VD1 Current limit unit Reset 6,3V 5,8V 4,8V A9 - A1 & + Enable Jitter VT1 1,0V+UT Clock EN/UV Thermal shutdown VT5 A8 & DCMAX 02 VT2 1,0V Oscilator A2 1 VT3 & 1 VT4 T1 A4 S Q R Q A5 A6 & Leading edge blanking 05 04 SOURCE A1 – A6, A8 – logic elements; A7 –dual-threshold comparator; A9 – current limit comparator; G1, G2 – DC current source; T1 – trigger; VD1 – Zener diode; VT1 – VT4 - MOS transistors VT5 – high voltage output n-channel DMOS transistor Fig. 1 – Electric block diagram 2012, April Ver. 00 IK3466 Table 2 - Absolute Maximum Ratings Parameter Symbol Target Unit VD DRAIN lead supply voltage Min -0,3 IDMAX Peak current, DRAIN lead, - 560 mA VEN/UV EN/UV lead voltage -0,3 9 V IEN/UV EN/UV lead current - 100 mA -0,3 9 VBP Tstg BYPASS lead voltage Storage temperature -60 Max 700 V V o 150 C * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Table 3 – Recommended Operation Mode Parameter Symbol Norm Unit VDS DRAIN lead supply voltage Min 50 Max 700 V IDS Peak current, DRAIN lead, - 375 mA VBP BYPASS lead voltage - 6,15 V ТJ Junction temperature -40* 125 o C ________ * Ambient temperature Table 3 – Electric Parameters IK3466 . o ( ТJ - 40* … +125 C, SOURCE = 0V , unless otherwise specified) Parameter Operating frequency Maximum duty cycle Measurement mode Control function o fOSC ТJ = 25 C S1 open DCMAX Symbol EN/UV pin turnoff threshold current EN/UV pin voltage VEN DRAIN supply current IS1 IDIS IS2 IEN/UV = -125 uA IEN/UV = 25 uA VEN/UV=0 V EN/UV open (MOSFET Switching) Notes 1, 2 Target Min. Max. 124 140 62 68 -300 -170 0,4 1,3 1,5 2,7 500 Unit kHz % A V A 320 2012, April Ver. 00 IK3466 Table 3 continued Parameter Symbol BYPASS pin charge current ICH1 ICH2 BYPASS pin voltage BYPASS pin voltage hysteresis EN/UV pin line under-voltage threshold current Protection circuit Current limit Mode of measurements VBP = 0 V, TJ = 25 oC Note 3 VBP = 4 V, o TJ = 25 C Note 3 Target Min. Max. mA -7,5 -2,5 -4,5 -1,5 VBP Note 3 5,6 6,15 VBPH - 0,8 1,2 ILUV ТJ = 25°C 44 54 325 375 ILIMIT di/dt = 70 mA/s Initial current limit IINIT ТJ = 25°C 0.65 x ILIMIT(MIN) Leading edge blanking time tLEB ТJ = 25°C Note 4 170 Thermal Shutdown Temperature tSD - 125 ON-state switch resistance Off-state switch drain current Breakdown voltage DRAIN pin supply voltage EN/UV pin output signal delay Unit V V A mA mA ns o Output parameters o ТJ = 25 C I D= RDS(ON) 35mA ТJ = 100oC VBP = 6.2 V, VEN/UV = 0 V, IDSS VDS = 560 V, TJ = 125oC VBP = 6.2 V, BVDSS VEN/UV = 0 V, TJ = 25oC, Note 5 tEN/UV 150 16 24 C A - 50 700 - 50 - 10 V V s NOTES: 1. Total current consumption is the sum of IS1 and IDSS when EN/UV pin is shorted to ground (MOSFET not switching) and the sum of IS2 and IDSS when EN/UV pin is open (MOSFET switching). 2. Consumption current measurement during the output MOSFET is switching can be performed at 6.1 V on BYPASS pin. 3. BP pin is not purposed for sourcing supply current to external circuitry. 4. This parameter is derived from characterization. 5. Shutdown voltage can be verified under the specification with minimum of BVDSS on an inclined DRAIN pin voltage closely, but not exceeding minimum of BVDSS 6. Parameters are guaranteed for constant junction temperature ТJ. Measurements of parameters have to be processed in pulse modes. _______________ * Ambient temperature 2012, April Ver. 00 IK3466 Table 4 – Typical Electric Parameters of IK3466 o (on default TA = 25 C, SOURCE = 0 V, unless otherwise specified) Parameter Max deviation Current limit delay Thermal shutdown hysteresis Rise Time Fall Time Output disable setup time Auto-Restart ON-Time Auto-Restart Duty Cycle Symbol Mode of measurement tILD ТJ = 25oC, Note 1, 2 tR tF Measured in a typical feedback IC application tDST tAR DCAR ТJ = 25oC, Note 3 Typical value 8 150 70 50 50 0,5 50 5,6 Unit kHz ns o C ns ns s ms % Note 1. This parameter is derived from characterization. 2. This parameter is derived from the change in current limit measured at 1x and 4x of the di/dt shown in the ILIMIT specification. 3. Auto-restart on time has the same temperature characteristics as the oscillator (inversely proportional to frequency). 2012, April Ver. 00 IK3466 Operation Description Unlike conventional PWM (Pulse width modulator) controllers, IK3466 uses a simple ON/OFF control to regulate the output voltage. Figure 1 shows the electric block diagram. The IK3466 consists of 132kHz oscillator , Enable circuit (sense and logic), Voltage regulator 5.8 V Under-voltage circuit Leading edge circuit Current limit circuit Temperature protection circuit Auto-restart counter The oscillator frequency is internally set to 132 kHz. Two signals are generated from the oscillator: the maximum duty cycle signal (DCMAX) and the Clock signal that indicates the start of each cycle. The oscillator contain built-in circuitry that introduces a small amount of frequency jitter, typically 8 kHz peak-to-peak, to minimize EMI emission. The modulation rate of the frequency jitter is set to 1 kHz to optimize EMI reduction for both average and quasi-peak emissions. The frequency jitter should be measured with the oscilloscope synchronized at the falling edge of the waveform. The enable input circuit at the EN/UV pin consists of a low impedance source follower output set at 1.0 V. Under most operating conditions (except when close to noload), the low impedance of the source follower keeps the voltage on the EN/UV pin from going much below 1.0 V in the disabled state. This improves the response time of the optocoupler that is usually connected to this pin. The 5.8 V regulator charges the bypass capacitor connected to the BYPASS pin to 5.8 V by drawing a current from the voltage on the DRAIN pin, whenever the MOSFET is off. The BYPASS pin is the internal supply voltage node for the IK3466. When the transistor VT5 is on, the IK3466operates from the energy stored in the bypass capacitor. Extremely low power consumption of the internal circuitry allows to operate continuously from current it takes from the DRAIN pin. A bypass capacitor value of 0.1 F is sufficient for both high frequency decoupling and energy storage. In addition, there is a 6.3 V shunt regulator clamping the BYPASS pin at 6.3 V when current is provided to the BYPASS pin through an external resistor. The BYPASS pin under-voltage sensing circuit disables the transistor VT5 when the BYPASS pin voltage drops below 4.8 V. Once the BYPASS pin voltage drops below 4.8 V, it must rise back to 5.8 V to enable (turn-on) the transistor VT5. The over temperature protection circuit disables the output power transistor VT5. To prevent cyclic fault action the over temperature protection circuit has temperature hysteresis about 70oC. A large temperature hysteresis (~70oC) guarantees prevention of overheating of the PCB under continuous fault condition. The current limit circuit senses the current in the transistor VT5. When this current exceeds the internal threshold (ILIMIT), the e transistor VT5 is turned off to the end of that cycle. The current limit circuit reduces the current limit threshold under medium and light loads. The leading edge blanking circuit inhibits the current limit comparator for a short time (tLEB) after the transistor VT5 is turned on. This leading edge blanking time has been set so that current spikes caused by capacitance and secondary-side rectifier reverse recovery time will not cause untimely termination of the switching pulse. In the event of a fault condition such as output overload, output short circuit, or an open loop condition, the IK3466enters into auto-restart mode. If the EN/UV pin is not pulled low for 50 ms, the transistor VT5 switching is normally disabled for 850 ms (except in the case of line under-voltage condition in which case it is disabled until the condition is removed). The auto-restart alternately enables and disables the switching of the transistor VT5 until the fault condition is removed. 2012, April Ver. 00 IK3466 T1 – pulse transformer; V1 – optoelectronic device with phototransistor; VD1, VD2 – diodes; VD3 – zener diode Fig. 2 – Typical application 2012, April Ver. 00 IK3466 Typical Performance Characteristics Fig. 3 – Average operating frequency fOSC vs.temperature.Tj Fig. 4 – DRAIN consumption current IS vs DRAIN supply voltage VD 2012, April Ver. 00 IK3466 Fig. 5 –Power dissipation Ptot vs DRAIN supply voltage VD 2012, April Ver. 00 IK3466 N SUFFIX PLASTIC DIP (MS – 001BA) A Dimension, mm 5 8 B 1 4 F Symbol MIN MAX A 8.51 10.16 B 6.1 7.11 C L C 5.33 D 0.36 0.56 F 1.14 1.78 -T- SEATING PLANE N G M K H D 0.25 (0.010) M J T NOTES: 1. Dimensions “A”, “B” do not include mold flash or protrusions. Maximum mold flash or protrusions 0.25 mm (0.010) per side. G 2.54 H 7.62 J 0° 10° K 2.92 3.81 L 7.62 8.26 M 0.2 0.36 N 0.38 D SUFFIX SOIC (MS - 012AA) Dimension, mm A 8 5 B H 1 G P 4 D K MIN MAX A 4.8 5 B 3.8 4 C 1.35 1.75 D 0.33 0.51 F 0.4 1.27 R x 45 C -T- Symbol SEATING PLANE J F 0.25 (0.010) M T C M NOTES: 1. Dimensions A and B do not include mold flash or protrusion. 2. Maximum mold flash or protrusion 0.15 mm (0.006) per side for A; for B ‑ 0.25 mm (0.010) per side. M G 1.27 H 5.72 J 0° 8° K 0.1 0.25 M 0.19 0.25 P 5.8 6.2 R 0.25 0.5 2012, April Ver. 00