TDE1897R TDE1898R ® 0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH 0.5A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING THERMAL SHUTDOWN OPEN GROUND PROTECTION INTERNAL NEGATIVE VOLTAGE CLAMPING TO VS - 45V FOR FAST DEMAGNETIZATION DIFFERENTIAL INPUTS WITH LARGE COMMON MODE RANGE AND THRESHOLD HYSTERESIS UNDERVOLTAGE LOCKOUT WITH HYSTERESIS OPEN LOAD DETECTION TWO DIAGNOSTIC OUTPUTS OUTPUT STATUS LED DRIVER DESCRIPTION The TDE1897R/TDE1898R is a monolithic Intelligent Power Switch in Multipower BCD Technol- MULTIPOWER BCD TECHNOLOGY Minidip SIP9 SO20 ORDERING NUMBERS: TDE1897RDP TDE1898RDP TDE1898RSP TDE1897RFP TDE1898RFP ogy, for driving inductive or resistive loads. An internal Clamping Diode enables the fast demagnetization of inductive loads. Diagnostic for CPU feedback and extensive use of electrical protections make this device inherently indistructible and suitable for general purpose industrial applications. BLOCK DIAGRAM September 2003 1/12 This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice. TDE1897R - TDE1898R PIN CONNECTIONS (Top view) SO20 Minidip SIP9 ABSOLUTE MAXIMUM RATINGS (Minidip pin reference) Symbol VS VS – VO Parameter Supply Voltage (Pins 3 - 1) (TW < 10ms) Supply to Output Differential Voltage. See also VCl 3-2 (Pins 3 - 2) Vi Vi Input Voltage (Pins 7/8) Differential Input Voltage (Pins 7 - 8) Ii IO Input Current (Pins 7/8) Output Current (Pins 2 - 1). See also ISC El Energy from Inductive Load (TJ = 85°C) Ptot Top Power Dissipation. See also THERMAL CHARACTERISTICS. Operating Temperature Range (Tamb) Tstg Storage Temperature Value Unit 50 internally limited V V -10 to VS +10 43 V V 20 internally limited mA A 200 mJ internally limited -25 to +85 W °C -55 to 150 °C THERMAL DATA Symbol Rth j-case Rth j-amb 2/12 Description Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Minidip Sip 100 10 70 SO20 Unit 90 °C/W °C/W TDE1897R - TDE1898R ELECTRICAL CHARACTERISTICS (VS = 24V; Tamb = –25 to +85°C, unless otherwise specified) Symbol Vsmin 3 Parameter Test Condition Supply Voltage for Valid Diagnostics Min. Idiag > 0.5mA @ Vdg1 = 1.5V Typ. 9 Vs 3 Supply Voltage (operative) Iq 3 Quiescent Current Iout = Ios = 0 Vil Vih Vsth1 Undervoltage Threshold 1 (See fig. 1); Tamb = 0 to +85°C Vsth2 3 Vshys Undervoltage Threshold 2 Supply Voltage Hysteresis (See fig. 1); Tamb = 0 to +85°C (See fig. 1); Tamb = 0 to +85°C 0.4 Short Circuit Current VS = 18 to 35V; RL = 1Ω 0.75 Output Voltage Drop @ Iout = 625mA; Tj = 25°C @ Iout = 625mA; Tj = 125°C Ioslk 2 Vol 2 Output Leakage Current @ Vi = Vil , Vo = 0V Low State Out Voltage @ Vi = Vil; RL = ∞ Vcl 3-2 Iold 2 Internal Voltage Clamp (VS - VO) Open Load Detection Current @ IO = -500mA Vi = Vih; Tamb = 0 to +85°C Vid 7-8 Common Mode Input Voltage Range (Operative) VS = 18 to 35V, VS - Vid 7-8 < 37V Iib 7-8 Vith 7-8 Input Bias Current Input Threshold Voltage Vi = –7 to 15V; –In = 0V V+In > V–In Viths 7-8 Input Threshold Hysteresis Voltage V+In > V–In Rid 7-8 Diff. Input Resistance @ 0 < +In < +16V; –In = 0V @ –7 < +In < 0V; –In = 0V Iilk 7-8 Input Offset Current V+In = V–In 0V < Vi <5.5V +Ii –Ii –20 –75 –25 –In = GND 0V < V+In <5.5V +Ii –Ii –250 +10 –125 +In = GND 0V < V–In <5.5V +Ii –Ii –100 –50 –30 –15 Isc Vdon 3-2 18 Unit 35 V 24 35 V 2.5 4.5 4 7.5 mA mA 1 15.5 3 V V 1.5 A 250 400 425 600 mV mV 300 µA 11 V 0.8 1.5 V 45 0.5 55 9.5 V mA –7 15 V –700 0.8 700 2 µA V 400 mV 1.4 50 400 150 Voth1 2 Output Status Threshold 1 Voltage (See fig. 1) Voth2 2 Output Status Threshold 2 Voltage (See fig. 1) 9 Vohys 2 Output Status Threshold Hysteresis (See fig. 1) 0.3 Iosd 4 Vosd 3-4 Output Status Source Current Active Output Status Driver Drop Voltage Vout > Voth1, Vos = 2.5V Vs – Vos @ Ios = 2mA; Tamb = -25 to 85°C Ioslk 4 Output Status Driver Leakage Current Vdgl 5/6 Idglk 5/6 Vfdg 5/6-3 Max. KΩ KΩ +20 µA µA +50 µA µA µA µA 12 V V 2 V 4 mA 5 V Vout < Voth2 , Vos = 0V VS = 18 to 35V 25 µA Diagnostic Drop Voltage D1 / D2 = L @ Idiag = 0.5mA D1 / D2 = L @ Idiag = 3mA 250 1.5 mV V Diagnostic Leakage Current D1 / D2 =H @ 0 < Vdg < Vs VS = 15.6 to 35V @ Idiag = 5mA; D1 / D2 = H 25 µA 2 V Clamping Diodes at the Diagnostic Outputs. Voltage Drop to VS Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); All test not dissipative. 2 0.7 Minidip pin reference. 3/12 TDE1897R - TDE1898R SOURCE DRAIN NDMOS DIODE Symbol Vfsd 2-3 Parameter Forward On Voltage Test Condition @ Ifsd = 625mA Ifp 2-3 trr 2-3 Forward Peak Current t = 10ms; d = 20% Reverse Recovery Time If = 625mA di/dt = 25A/µs tfr 2-3 Forward Recovery Time Min. Typ. 1 Max. 1.5 Unit V 2 A 200 ns 50 ns 150 30 °C °C THERMAL CHARACTERISTICS (*) Θ Lim TH Junction Temp. Protect. Thermal Hysteresis 135 SWITCHING CHARACTERISTICS (VS = 24V; RL = 48Ω) (*) ton Turn on Delay Time 100 µs toff Turn off Delay Time 20 µs td Input Switching to Diagnostic Valid 100 µs Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. (*) Not tested. Figure 1 DIAGNOSTIC TRUTH TABLE Diagnostic Conditions Normal Operation Open Load Condition (Io < Iold) Short to VS Short Circuit to Ground (IO = ISC) (**) TDE1897R TDE1898R Output DMOS Open Overtemperature Supply Undervoltage (VS < Vsth1 in the falling phase of the supply voltage; VS < Vsth2 in the rising phase of the supply voltage) Input L H L H Output L H L H Diag1 H H H L Diag2 H H H H L H H H L L H H H <H (*) H L H H L H H H H L H L H L L L L H L H H H H L L L H L L L L L L (*) According to the intervention of the current limiting block. (**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897 uses Diag2 to signal such condition, TDE1898 does not. 4/12 TDE1897R - TDE1898R APPLICATION INFORMATION DEMAGNETIZATION OF INDUCTIVE LOADS An internal zener diode, limiting the voltage across the Power MOS to between 45 and 55V (Vcl), provides safe and fast demagnetization of inductive loads without external clamping devices. The maximum energy that can be absorbed from an inductive load is specified as 200mJ (at Tj = 85°C). To define the maximum switching frequency three points have to be considered: 1) The total power dissipation is the sum of the On State Power and of the Demagnetization Energy multiplied by the frequency. 2) The total energy W dissipated in the device during a demagnetization cycle (figg. 2, 3) is: W = Vcl Figure 3: Demagnetization Cycle Waveforms Vcl – Vs Vs L log 1 + ] [ Io – RL V – Vs RL cl Where: Vcl = clamp voltage; L = inductive load; RL = resistive load; Vs = supply voltage; IO = ILOAD 3) In normal conditions the operating Junction temperature should remain below 125°C. Figure 2: Inductive Load Equivalent Circuit Figure 4: Normalized RDSON vs. Junction Temperature D93IN018 α 1.8 α= 1.6 RDSON (Tj) RDSON (Tj=25˚C) 1.4 1.2 1.0 0.8 0.6 -25 0 25 50 75 100 125 Tj (˚C) 5/12 TDE1897R - TDE1898R WORST CONDITION POWER DISSIPATION IN THE ON-STATE In IPS applications the maximum average power dissipation occurs when the device stays for a long time in the ON state. In such a situation the internal temperature depends on delivered current (and related power), thermal characteristics of the package and ambient temperature. At ambient temperature close to upper limit (+85°C) and in the worst operating conditions, it is possible that the chip temperature could increase so much to make the thermal shutdown procedure untimely intervene. Our aim is to find the maximum current the IPS can withstand in the ON state without thermal shutdown intervention, related to ambient temperature. To this end, we should consider the following points: 1) The ON resistance RDSON of the output NDMOS (the real switch) of the device increases with its temperature. Experimental results show that silicon resistivity increases with temperature at a constant rate, rising of 60% from 25°C to 125°C. The relationship between RDSON and temperature is therefore: R DSON = R DSON0 ( 1 + k ) ( T j − 25 ) where: Tj is the silicon temperature in °C RDSON0 is RDSON at Tj=25°C k is the constant rate (k = 4.711 ⋅ 10 −3) (see fig. 4). 2) In the ON state the power dissipated in the device is due to three contributes: a) power lost in the switch: P out = I out 2 ⋅ R DSON (Iout is the output current); b) power due to quiescent current in the ON state Iq, sunk by the device in addition to Iout: P q = I q ⋅ V s (Vs is the supply voltage); c) an external LED could be used to visualize the switch state (OUTPUT STATUS pin). Such a LED is driven by an internal current source (delivering Ios) and therefore, if Vos is the voltage drop across the LED, the dissipated power is: P os = I os ⋅ ( V s − V os ). Thus the total ON state power consumption is given by: P on = P out + P q + P os (1) In the right side of equation 1, the second and 6/12 the third element are constant, while the first one increases with temperature because RDSON increases as well. 3) The chip temperature must not exceed ΘLim in order do not lose the control of the device. The heat dissipation path is represented by the thermal resistance of the system deviceboard-ambient (Rth). In steady state conditions, this parameter relates the power dissipated Pon to the silicon temperature Tj and the ambient temperature Tamb: T j − T amb = P on ⋅ R th (2) From this relationship, the maximum power Pon which can be dissipated without exceeding ΘLim at a given ambient temperature Tamb is: P on = ΘLim − T amb R th Replacing the expression (1) in this equation and solving for Iout, we can find the maximum current versus ambient temperature relationship: √ ΘLim − T amb I outx = R th − P q − P os R DSONx where RDSONx is RDSON at Tj=ΘLim. Of course, Ioutx values are top limited by the maximum operative current Ioutx (500mA nominal). From the expression (2) we can also find the maximum ambient temperature Tamb at which a given power Pon can be dissipated: T amb = ΘLim − P on ⋅ R th = = ΘLim − ( I out 2 ⋅ R DSONx + P q + P os ) ⋅ R th In particular, this relation is useful to find the maximum ambient temperature Tambx at which Ioutx can be delivered: T ambx = ΘLim − ( I outx 2 ⋅ R DSONx + + P q + P os ) ⋅ R th (4) Referring to application circuit in fig. 5, let us consider the worst case: - The supply voltage is at maximum value of industrial bus (30V instead of the 24V nominal value). This means also that Ioutx rises of 25% TDE1897R - TDE1898R (625mA instead of 500mA). - All electrical parameters of the device, concerning the calculation, are at maximum values. - Thermal shutdown threshold is at minimum value. - No heat sink nor air circulation (Rth equal to Rthj-amb). Therefore: Vs = 30V, RDSON0 = 0.6Ω, Iq = 6mA, Ios = 4mA @ Vos = 2.5V, ΘLim = 135°C Rthj-amb = 100°C/W (Minidip); 90°C/W (SO20); 70°C/W (SIP9) It follows: Ioutx = 0.625mA, RDSONx = 1.006Ω, Pq = 180mW, Pos = 110mW From equation 4, we can find: Tambx = 66.7°C (Minidip); 73.5°C (SO20); 87.2°C (SIP9). Therefore, the IPS TDE1897/1898, although guaranteed to operate up to 85°C ambient temperature, if used in the worst conditions, can meet some limitations. SIP9 package, which has the lowest Rthj-amb, can work at maximum operative current over the entire ambient temperature range in the worst conditions too. For other packages, it is necessary to consider some reductions. With the aid of equation 3, we can draw a derating curve giving the maximum current allowable versus ambient temperature. The diagrams, computed using parameter values above given, are depicted in figg. 6 to 8. If an increase of the operating area is needed, heat dissipation must be improved (Rth reduced) e.g. by means of air cooling. Figure 5: Application Circuit. DC BUS 24V +/-25% +Vs +IN -IN µP POLLING + CONTROL LOGIC - OUTPUT D1 Ios D2 GND LOAD OUTPUT STATUS D93IN014 7/12 TDE1897R - TDE1898R Figure 6: Max. Output Current vs. Ambient Temperature (Minidip Package, Rth j-amb = 100°C/W) Figure 7: Max. Output Current vs. Ambient Temperature (SO20 Package, Rth j-amb = 90°C/W) D93IN016 D93IN015 (mA) (mA) 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0 20 40 60 80 100 (°C) Figure 8: Max. Output Current vs. Ambient Temperature (SIP9 Package, Rth j-amb = 70°C/W) D93IN017 (mA) 600 500 400 300 200 100 0 0 8/12 20 40 60 80 100 (˚C) 0 20 40 60 80 100 (˚C) TDE1897R - TDE1898R mm inch DIM. MIN. A TYP. MAX. MIN. 3.32 TYP. MAX. 0.131 a1 0.51 B 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 0.020 D E 10.92 7.95 9.75 0.430 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 6.6 0.260 I 5.08 0.200 L Z 3.18 OUTLINE AND MECHANICAL DATA 3.81 1.52 0.125 0.150 Minidip 0.060 9/12 TDE1897R - TDE1898R mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 7.1 a1 2.7 3 B 0.280 0.106 0.118 23 B3 0.90 24.8 b1 0.976 0.5 b3 0.85 0.020 1.6 0.033 0.063 C 3.3 0.130 c1 0.43 0.017 c2 1.32 D 0.052 21.2 0.835 d1 14.5 0.571 e 2.54 0.100 e3 20.32 L 0.800 3.1 0.122 L1 3 0.118 L2 17.6 0.693 L3 0.25 L4 OUTLINE AND MECHANICAL DATA MAX. 17.4 17.85 M 3.2 N 1 0.010 0.685 0,702 0.126 SIP9 0.039 P 0.15 0.006 C D L1 L3 c2 N P 1 9 L a1 L2 L4 A d1 M b1 b3 e 1 c e3 B B3 10/12 SIP9 TDE1897R - TDE1898R mm inch OUTLINE AND MECHANICAL DATA DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.35 2.65 0.093 0.104 A1 0.1 0.3 0.004 0.012 B 0.33 0.51 0.013 0.020 C 0.23 0.32 0.009 0.013 D 12.6 13 0.496 0.512 E 7.4 7.6 0.291 0.299 e 1.27 0.050 H 10 10.65 0.394 0.419 h 0.25 0.75 0.010 0.030 L 0.4 1.27 0.016 0.050 SO20 K 0˚ (min.)8˚ (max.) L h x 45˚ A B e A1 K C H D 20 11 E 1 0 1 SO20MEC 11/12 TDE1897R - TDE1898R Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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