TDE1890 TDE1891 2A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH 2A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING THERMAL SHUTDOWN OPEN GROUND PROTECTION INTERNAL NEGATIVE VOLTAGE CLAMPING TO VS - 50V FOR FAST DEMAGNETIZATION DIFFERENTIAL INPUTS WITH LARGE COMMON MODE RANGE AND THRESHOLD HYSTERESIS UNDERVOLTAGELOCKOUT WITH HYSTERESIS OPEN LOAD DETECTION TWO DIAGNOSTIC OUTPUTS OUTPUT STATUS LED DRIVER DESCRIPTION The TDE1890/1891 is a monolithic Intelligent Power Switch in Multipower BCD Technology, for MULTIPOWER BCD TECHNOLOGY MULTIWATT11 MULTIWATT11V PowerSO20 (In line) ORDERING NUMBERS: TDE1891L TDE1890V TDE1890D TDE1891V driving inductive or resistive loads. An internal Clamping Diode enables the fast demagnetization of inductive loads. Diagnostic for CPU feedback and extensive use of electrical protections make this device extremely rugged and specially suitable for industrial automation applications. BLOCK DIAGRAM July 1998 1/12 TDE1890 - TDE1891 PIN CONNECTION (Top view) 11 OUTPUT 10 SUPPLY VOLTAGE 9 OUTPUT 8 N.C. 7 N.C. 6 GND 5 OUTPUT STATUS 4 INPUT - 3 INPUT + 2 DIAGNOSTIC 2 GND 1 20 GND OUTPUT 2 19 OUTPUT STATUS OUTPUT 3 18 INPUT - N.C. 4 17 INPUT + SUPPLY VOLTAGE 5 16 N.C. SUPPLY VOLTAGE 6 15 DIAGNOSTIC 2 N.C. 7 14 DIAGNOSTIC 1 OUTPUT 8 13 N.C. OUTPUT 9 12 N.C. 10 11 GND GND DIAGNOSTIC 1 1 D93IN021 D93IN022 Note: Output pins must be must be connected externally to the package to use all leads for the output current (Pin 9 and 11 for Multiwatt package, Pin 2, 3, 8 and 9 for PowerSO20 package). ABSOLUTE MAXIMUM RATINGS Symbol VS VS – VO Parameter Value Unit 50 V Supply Voltage (Pin 10) (TW < 10ms) Supply to Output Differential Voltage. See also VCl (Pins 10 - 9) internally limited V -10 to VS +10 V Vi Input Voltage (Pins 3/4) Vi Differential Input Voltage (Pins 3 - 4) 43 V Ii Input Current (Pins 3/4) 20 mA IO Output Current (Pin 9). See also ISC (Pin 9) internally limited A Ptot Power Dissipation. See also THERMAL CHARACTERISTICS. internally limited W Top Operating Temperature Range (Tamb) -25 to +85 °C Tstg Storage Temperature -55 to 150 °C 1 J EI Energy Induct. Load TJ = 85°C THERMAL DATA Symbol Multiwatt PowerSO20 Unit Rth j-case Thermal Resistance Junction-case Max. 1.5 1.5 ÉC/W Rth j-amb Thermal Resistance Junction-ambient Max. 35 – ÉC/W 2/12 Description TDE1890 - TDE1891 ELECTRICAL CHARACTERISTICS (VS = 24V; Tamb = –25 to +85°C, unless otherwise specified) Symbol Vsmin Parameter Supply Voltage for Valid Diagnostics Test Condition Min. Idiag > 0.5mA ; Vdg1 = 1.5V Typ. 9 Vs Supply Voltage (operative) Iq Quiescent Current Iou t = Ios = 0 Vil Vih Vsth1 Undervoltage Threshold 1 (See fig. 1), Tamb = 0 to +85°C Vsth2 Undervoltage Threshold 2 Vshys Supply Voltage Hysteresis 18 Max. Unit 35 V 24 35 V 3 5 7 8 mA mA 11 V 15.5 1 Isc Short Circuit Current VS = 18 to 35V; RL = 2Ω Vdon Output Voltage Drop Iout = 2.0A Tj = 25°C Tj = 125°C Iout = 2.5A Tj = 25°C Tj = 125°C 2.6 Ioslk Output Leakage Current Vi = Vil ; Vo = 0V Vol Low State Out Voltage Vi = Vil ; RL = ∞ Vcl Internal Voltage Clamp (VS - VO) IO = 1A Single Pulsed: Tp = 300µs 48 Iold Open Load Detection Current Vi = Vih; Tamb = 0 to +85°C Vid Common Mode Input Voltage Range (Operative) VS = 18 to 35V, VS - Vid < 37V 5 A 500 800 575 920 mV mV mV mV 500 µA 0.8 1.5 V 53 58 V 0.5 9.5 mA –7 15 V 250 µA 360 575 440 700 Iib Input Bias Current Vi = –7 to 15V; –In = 0V Vith Input Threshold Voltage V+In > V–In 0.8 Viths Input Threshold Hysteresis Voltage V+In > V–In 50 R id Diff. Input Resistance 0 < +In < +16V ; –In = 0V –7 < +In < 0V ; –In = 0V Iilk Input Offset Current V+In = V–In 0V < Vi <5.5V +Ii –Ii –20 –75 –25 –In = GND 0V < V+In <5.5V +Ii –Ii –250 +10 –125 +In = GND 0V < V–In <5.5V +Ii –Ii –100 –50 –30 –15 Voth1 Output Status Threshold 1 Voltage (See fig. 1) Voth2 Output Status Threshold 2 Voltage (See fig. 1) Vohys Output Status Threshold Hysteresis (See fig. 1) Iosd Output Status Source Current Vout > Voth1 ; Vos = 2.5V Vosd Active Output Status Driver Drop Voltage Ioslk V V –250 1.4 2 V 400 mV 400 150 KΩ KΩ +20 µA µA +50 µA µA 11.5 8.5 V 0.7 2 µA µA V V 4 mA VS – Vos ; Ios = 2mA Tamb = -25 to +85°C 5 V Output Status Driver Leakage Current Vout < Voth2 ; Vos = 0V VS = 18 to 35V 25 µA V dgl Diagnostic Drop Voltage D1 / D2 = L ; Idiag = 0.5mA D1 / D2 = L ; Idiag = 3mA 250 1.5 mV V Idglk Diagnostic Leakage Current D1 / D2 =H ; 0 < Vdg < Vs VS = 15.6 to 35V 25 µA Vfdg Clamping Diodes at the Diagnostic Outputs. Voltage Drop to VS Idiag = 5mA; D1 / D2 = H 2 V Note Vil < 0.8V, Vih > 2V @ (V+In > V–In) 3/12 TDE1890 - TDE1891 SOURCE DRAIN NDMOS DIODE Symbol Parameter Test Condition Forward On Voltage @ Ifsd = 2.5A Ifp Forward Peak Current t = 10ms; d = 20% trr Reverse Recovery Time If = 2.5A di/dt = 25A/µs tfr Forward Recovery Time Vfsd Min. Typ. Max. Unit 1 1.5 V 6 A 200 ns 100 ns THERMAL CHARACTERISTICS Ø Lim TH Junction Temp. Protect. 135 Thermal Hysteresis 150 °C 30 °C SWITCHING CHARACTERISTICS (VS = 24V; RL = 12Ω) µs ton Turn on Delay Time 200 toff Turn off Delay Time 40 µs td Input Switching to Diagnostic Valid 200 µs Note Vil < 0.8V, Vih > 2V @ (V+In > V–In) Figure 1 TRUE FALSE HIGH LOW DIAGNOSTIC TRUTH TABLE Input Output Diag1 Diag2 Normal Operation Diagnostic Conditions L H L H H H H H Open Load Condition (Io < Iold) L H L H H L H H Short to VS L H H H L L H H H <H (*) H L H H L H H H H Output DMOS Open L H L L H L H H Overtemperature L H L L H H L L Supply Undervoltage (VS < Vsth2) L H L L L L L L Short Circuit to Ground (IO = ISC) (**) TDE1891 TDE1890 (*) According to the intervention of the current limiting block. (**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the I PS, when the IPS is initially turned on. TDE1891 uses Diag2 to signal such condition, TDE1890 does not. 4/12 TDE1890 - TDE1891 APPLICATION INFORMATION DEMAGNETIZATION OF INDUCTIVE LOADS An internal zener diode, limiting the voltage across the Power MOS to between 50 and 60V (Vcl), provides safe and fast demagnetization of inductive loads without external clamping devices. The maximum energy that can be absorbed from an inductive load is specified as 1J (at T j = 85°C). To define the maximum switching frequency three points have to be considered: 1) The total power dissipation is the sum of the On State Power and of the Demagnetization Energy multiplied by the frequency. 2) The total energy W dissipated in the device during a demagnetization cycle (figg. 2, 3) is: W = Vcl Vs Vcl – Vs L [Io – log 1 + ] RL RL V – Vs cl Where: Vcl = clamp voltage; L = inductive load; RL = resistive load; Vs = supply voltage; IO = ILOAD 3) In normal conditions the operating Junction temperature should remain below 125°C. If the demagnetization energy exceeds the rated value, an external clamp between output and +VS must be externally connected (see fig. 5). The external zener will be chosen with Vzener value lower than the internal Vcl minimum rated value and significantly (at least 10V) higher than the voltage that is externally supplied to pin 10, i.e. than the supply voltage. Alternative circuit solutions can be implemented to divert the demagnetization stress from the TDE1890/1, if it exceeds 1J. In all cases it is recommended that at least 10V are available to demagnetize the load in the turn-off phase. A clamping circuit connected between ground and the output pin is not recommended. An interruption of the connection between the ground of the load and the ground of the TDE1890/1 would leave the TDE1890/1 alone to absorb the full amount of the demagnetization energy. Figure 2: Inductive Load Equivalent Circuit 5/12 TDE1890 - TDE1891 Figure 3: Demagnetization Cycle Waveforms Figure 4: Normalized RDSON vs. Junction Temperature D93IN018 α 1.8 α= 1.6 RDSON (Tj) RDSON (Tj=25°C) 1.4 1.2 1.0 0.8 0.6 -25 Figure 5. 6/12 0 25 50 75 100 125 Tj (°C) TDE1890 - TDE1891 WORST CONDITION POWER DISSIPATION IN THE ON-STATE In IPS applications the maximum average power dissipation occurs when the device stays for a long time in the ON state. In such a situation the internal temperature depends on delivered current (and related power), thermal characteristics of the package and ambient temperature. At ambient temperature close to upper limit (+85°C) and in the worst operating conditions, it is possible that the chip temperature could increase so much to make the thermal shutdown procedure untimely intervene. Our aim is to find the maximum current the IPS can withstand in the ON state without thermal shutdown intervention, related to ambient temperature. To this end, we should consider the following points: 1) The ON resistance RDSON of the output NDMOS (the real switch) of the device increases with its temperature. Experimental results show that silicon resistivity increases with temperature at a constant rate, rising of 60% from 25°C to 125°C. The relationship between RDSON and temperature is therefore: R DSON = R DSON0 ( 1 + k ) ( T j − 25 ) where: Tj is the silicon temperature in °C RDSON0 is RDSON at T j=25°C k is the constant rate (k = 4.711 ⋅ 10 −3) (see fig. 4). 2) In the ON state the power dissipated in the device is due to three contributes: a) power lost in the switch: P out = I out 2 ⋅ R DSON (Iout is the output current); b) power due to quiescent current in the ON state Iq, sunk by the device in addition to Iout: P q = I q ⋅ V s (Vs is the supply voltage); c) an external LED could be used to visualize the switch state (OUTPUT STATUS pin). Such a LED is driven by an internal current source (delivering I os) and therefore, if Vos is the voltage drop across the LED, the dissipated power is: P os = I os ⋅ ( V s − V os ). Thus the total ON state power consumption is given by: P on = P out + P q + P os (1) In the right side of equation 1, the second and the third element are constant, while the first one increases with temperature because RDSON increases as well. 3) The chip temperature must not exceed ΘLim in order do not lose the control of the device. The heat dissipation path is represented by the thermal resistance of the system deviceambient (Rth). In steady state conditions, this parameter relates the power dissipated Pon to the silicon temperature Tj and the ambient temperature T amb: T j − T amb = P on ⋅ R th (2) From this relationship, the maximum power Pon which can be dissipated without exceeding ΘLim at a given ambient temperature Tamb is: P on = ΘLim − T amb R th Replacing the expression (1) in this equation and solving for Iout, we can find the maximum current versus ambient temperature relationship: √ ΘLim − T amb I outx = R th − P q − P os R DSONx where RDSONx is RDSON at Tj=ΘLim. Of course, Ioutx values are top limited by the maximum operative current Ioutx (2A nominal). From the expression (2) we can also find the maximum ambient temperature T amb at which a given power Pon can be dissipated: T amb = ΘLim − P on ⋅ R th = = ΘLim − ( I out 2 ⋅ R DSONx + P q + P os ) ⋅ R th In particular, this relation is useful to find the maximum ambient temperature Tambx at which I outx can be delivered: T ambx = ΘLim − ( I outx 2 ⋅ R DSONx + + P q + P os ) ⋅ R th (4) Referring to application circuit in fig. 6, let us consider the worst case: - The supply voltage is at maximum value of industrial bus (30V instead of the 24V nominal value). This means also that Ioutx rises of 25% (2.5A instead of 2A). 7/12 TDE1890 - TDE1891 - All electrical parameters of the device, concerning the calculation, are at maximum values. - Thermal shutdown threshold is at minimum value. Therefore: Vs = 30V, RDSON0 = 0.23Ω, Iq = 8mA, Ios = 4mA @ Vos = 2.5V, ΘLim = 135°C Rthj-amb = 35°C/W It follows: Ioutx = 2.5A, RDSONx = 0.386Ω, Pq = 240mW, Pos = 110mW From equation 4 we can see that, without any heatsink, it is not possible to operate in the ON steady state at the maximum current value. A derating curve for this case is reported in fig. 7. Using an external heatsink, in order to obtain a total Rth of 15°C/W, we obtain the derating curve reported in fig. 8. Figure 6: Application Circuit DC BUS 24V +/-25% +Vs +IN -IN + CONTROL LOGIC - OUTPUT D1 µP POLLING Ios D2 GND LOAD OUTPUT STATUS D93IN014 Figure 7: Max. Output Current vs. Ambient Temperature (Multiwatt without heatsink, Rth j-amb = 35°C/W) D93IN033 D93IN020A Io (A) Io (A) 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0.0 0 8/12 Figure 8: Max. Output Current vs. Ambient Temperature (Multiwatt with heatsink, Rth j-amb = 15°C/W) 20 40 60 80 100 120 Tamb (°C) 0 20 40 60 80 100 120 Tamb (°C) TDE1890 - TDE1891 MULTIWATT11 (Vertical) PACKAGE MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 5 B 2.65 0.104 C 1.6 0.063 D 0.197 1 E 0.49 0.039 0.55 0.019 0.022 F 0.88 0.95 0.035 G 1.45 1.7 1.95 0.057 0.067 0.037 0.077 G1 16.75 17 17.25 0.659 0.669 0.679 H1 19.6 0.772 H2 20.2 L 21.9 22.2 L1 21.7 22.1 L2 17.4 L3 17.25 L4 10.3 L7 2.65 M 22.5 0.795 0.862 0.874 0.87 0.886 22.5 0.854 18.1 0.685 0.886 17.5 17.75 0.679 0.689 0.699 10.7 10.9 0.406 0.421 0.429 2.9 0.104 4.25 4.55 4.85 0.167 0.179 M1 4.73 5.08 5.43 0.186 0.200 S 1.9 2.6 0.075 0.102 0.713 0.114 0.191 0.214 S1 1.9 2.6 0.075 0.102 Dia1 3.65 3.85 0.144 0.152 9/12 TDE1890 - TDE1891 MULTIWATT11 (In line) PACKAGE MECHANICAL DATA mm DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 5 0.197 B 2.65 0.104 C 1.6 0.063 E 0.49 0.55 0.019 0.022 F 0.88 0.95 0.035 0.037 G 1.57 1.7 1.83 0.062 0.067 0.072 G1 16.87 17 17.13 0.664 0.669 0.674 H1 19.6 0.772 H2 10/12 inch 20.2 0.795 L 26.4 26.9 1.039 1.059 L1 22.35 22.85 0.880 0.900 L3 17.25 17.5 17.75 0.679 0.689 0.699 L4 10.3 10.7 10.9 0.406 0.421 0.429 L7 2.65 2.9 0.104 0.114 S 1.9 2.6 0.075 0.102 S1 1.9 2.6 0.075 0.102 Dia1 3.65 3.85 0.144 0.152 TDE1890 - TDE1891 PowerSO20 PACKAGE MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. A MIN. TYP. MAX. 3.6 a1 0.1 0.142 0.3 a2 0.004 0.012 3.3 a3 0.130 0 0.1 0.000 0.004 b 0.4 0.53 0.016 0.021 c 0.23 0.32 0.009 0.013 D (1) 15.8 16 0.622 0.630 D1 9.4 9.8 0.370 0.386 E 13.9 14.5 0.547 0.570 e 1.27 e3 11.43 E1 (1) 0.050 0.450 10.9 11.1 E2 0.429 0.437 2.9 0.114 E3 5.8 6.2 0.228 0.244 G 0 0.1 0.000 0.004 H 15.5 15.9 0.610 h 0.626 1.1 L 0.8 0.043 1.1 0.031 N 10° (max.) S 8° (max) T 0.043 10 0.394 (1) ”D and F” do not include mold flash or protrusions. - Mold flash or protrusions shall not exceed 0.15 mm (0.006”). - Critical dimensions: ”E”, ”G” and ”a3” N R N a2 b A e DETAIL A c a1 DETAIL B E e3 H DETAIL A lead D slug a3 DETAIL B 20 11 0.35 Gage Plane -C- S SEATING PLANE L G E2 E1 BOTTOM VIEW C (COPLANARITY) T E3 1 h x 45° 10 PSO20MEC D1 11/12 TDE1890 - TDE1891 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics MULTIWATT is a Registered Trademark of STMicroelectronics PowerSO20 is a Trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 12/12