INFINEON IPP070N06LG

IPB070N06L G IPP070N06L G
OptiMOS® Power-Transistor
Product Summary
Features
V DS
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
R DS(on),max
SMD version
ID
60
V
7
mΩ
80
A
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Type
IPB070N06L G
Type
IPP070N06L G
Package
Marking
IPB070N06L G
Package
PG-TO263-3
PG-TO263-3
PG-TO220-3
070N06L
IPP070N06L G
Marking
070N06L
PG-TO220-3
070N06L
070N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C1)
80
T C=100 °C
80
Pulsed drain current
I D,pulse
T C=25 °C2)
320
Avalanche energy, single pulse
E AS
I D=80 A, R GS=25 Ω
450
Reverse diode dv /dt
dv /dt
I D=80 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
6
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
A
mJ
kV/µs
±20
V
214
W
-55 ... 175
°C
55/175/56
1)
Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 114 A.
2)
See figure 3
Rev. 1.22
Unit
page 1
2006-04-07
IPB070N06L G IPP070N06L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.7
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=150 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.01
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
1
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=60 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=80 A
-
5.8
7
mΩ
V GS=4.5 V, I D=53 A
-
7.1
10
V GS=10 V, I D=80 A,
SMD version
5.5
6.7
V GS=4.5 V, I D=53 A,
SMD version
6.8
9.7
-
1.9
-
Ω
60
121
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=80 A
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
Rev. 1.22
page 2
2006-04-07
IPB070N06L G IPP070N06L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
3200
4300
-
750
1000
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
180
270
Turn-on delay time
t d(on)
-
18
27
Rise time
tr
-
35
52
Turn-off delay time
t d(off)
-
28
42
Fall time
tf
-
31
47
Gate to source charge
Q gs
-
12
15
Gate charge at threshold
Q g(th)
-
5
7
Gate to drain charge
Q gd
-
31
46
Switching charge
Q sw
-
37
55
Gate charge total
Qg
-
95
126
Gate plateau voltage
V plateau
-
3.6
-
Output charge
Q oss
-
29
39
-
-
80
-
-
320
-
0.91
1.3
V
-
59
75
ns
-
80
100
nC
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=80 A, R G=2 Ω
pF
ns
Gate Charge Characteristics4)
V DD=30 V, I D=80 A,
V GS=0 to 10 V
V DD=30 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
V R=30 V, I F=I S,
di F/dt =100 A/µs
A
See figure 16 for gate charge parameter definition
Rev. 1.22
page 3
2006-04-07
IPB070N06L G IPP070N06L G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
90
250
80
200
70
60
I D [A]
P tot [W]
150
50
40
100
30
20
50
10
0
0
0
50
100
150
0
200
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
100
1 µs
limited by on-state
resistance
10 µs
100 µs
0.5
102
1 ms
Z thJC [K/W]
DC
I D [A]
10 ms
101
0.2
10-1
0.1
0.05
0.02
100
0.01
10-1
10-2
-1
10
0
1
10
10
2
10
V DS [V]
Rev. 1.22
single pulse
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2006-04-07
IPB070N06L G IPP070N06L G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
15
240
5.5 V
5V
4.5 V
200
10
R DS(on) [mΩ]
160
I D [A]
4V
3.5 V
10 V
4V
120
4.5 V
5V
5.5 V
10 V
5
80
3.5 V
40
0
0
0
1
2
0
0
3
40
80
V DS [V]
120
160
200
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
160
160
120
120
g fs [S]
I D [A]
parameter: T j
80
40
80
40
175 °C
25 °C
0
0
0
1
2
3
4
5
Rev. 1.22
0
20
40
60
80
I D [A]
V GS [V]
page 5
2006-04-07
IPB070N06L G IPP070N06L G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=80 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
20
3
2.5
15
V GS(th) [V]
R DS(on) [mΩ]
2
10
98 %
1500 µA
1.5
150 µA
1
typ
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
25 °C
102
103
175°C 98%
175 °C
I F [A]
C [pF]
Coss
Crss
25°C 98%
101
102
100
101
10-1
0
10
20
30
40
50
V DS [V]
Rev. 1.22
0
0.5
1
1.5
2
V SD [V]
page 6
2006-04-07
IPB070N06L G IPP070N06L G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=80 A pulsed
parameter: T j(start)
parameter: V DD
102
12
25 °C
30 V
100 °C
10
12V
48 V
150 °C
V GS [V]
I AV [A]
8
101
6
4
2
100
0
100
101
102
103
0
20
t AV [µs]
40
60
80
100
120
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
75
V GS
Qg
V BR(DSS) [V]
70
65
V g s(th)
60
55
Q g (th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
T j [°C]
Rev. 1.22
page 7
2006-04-07
IPB070N06L G IPP070N06L G
PG-TO-263 (D²-Pak)
Rev. 1.22
page 8
2006-04-07
IPB070N06L G IPP070N06L G
PG-TO220-3: Outline
Rev. 1.22
page 9
2006-04-07
IPB070N06L G IPP070N06L G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office ( www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.22
page 10
2006-04-07