PD-97507 IR3843WMPbF SupIRBuck HIGHLY EFFICIENT TM INTEGRATED 2A SYNCHRONOUS BUCK REGULATOR Features • • • • • • • • • • • • • • • • • • • Description Wide Input Voltage Range 1.5V to 16V Wide Output Voltage Range 0.7V to 0.9*Vin Continuous 2A Load Capability Integrated Bootstrap-diode High Bandwidth E/A for excellent transient performance Programmable Switching Frequency up to 1.5MHz Programmable Over Current Protection PGood output Hiccup Current Limit Precision Reference Voltage (0.7V, +/-1%) Programmable Soft-Start Enable Input with Voltage Monitoring Capability Enhanced Pre-Bias Start-up Seq input for Tracking applications -40oC to 125oC operating junction temperature Thermal Protection Multiple current ratings in pin compatible footprint 5mm x 6mm Power QFN Package, 0.9 mm height Lead-free, halogen-free and RoHS compliant The IR3843W SupIRBuckTM is an easy-to-use, fully integrated and highly efficient DC/DC synchronous Buck regulator. The MOSFETs copackaged with the on-chip PWM controller make IR3843W a space-efficient solution, providing accurate power delivery for low output voltage applications. IR3843W is a versatile regulator which offers programmability of start up time, switching frequency and current limit while operating in wide input and output voltage range. The switching frequency is programmable from 250kHz to 1.5MHz for an optimum solution. It also features important protection functions, such as Pre-Bias startup, hiccup current limit and thermal shutdown to give required system level security in the event of fault conditions. Applications • • • • • • • Server Applications Storage Applications Embedded Telecom Systems Distributed Point of Load Power Architectures Netcom Applications Computing Peripheral Voltage Regulators General DC-DC Converters 1.5V <Vin<16V 4.5V <Vcc<5.5V Seq Enable Vin Boot Vo Vcc SW PGood PGood OCSet Fb Rt SS/ SD Gnd PGnd Comp Fig. 1. Typical application diagram Rev 10.0 1 PD-97507 IR3843WMPbF ABSOLUTE MAXIMUM RATINGS (Voltages referenced to GND unless otherwise specified) • Vin ……………………………………………………. -0.3V to 25V • Vcc ……………….….…………….……..……….…… -0.3V to 8V (Note2) • Boot ……………………………………..……….…. -0.3V to 33V • SW …………………………………………..……… -0.3V to 25V(DC), -4V to 25V(AC, 100ns) • Boot to SW • OCSet • Input / output Pins • PGND to GND ……………...………………………….. -0.3V to +0.3V • Storage Temperature Range ................................... -55°C To 150°C • Junction Temperature Range ................................... -40°C To 150°C (Note2) • ESD Classification …………………………… ……… JEDEC Class 1C • Moisture sensitivity level………………...………………JEDEC Level 3@260 °C ……..…………………………….…..….. -0.3V to Vcc+0.3V (Note1) ………………………………………….……. -0.3V to 30V, 30mA ……………………………….. ... -0.3V to Vcc+0.3V (Note1) Note1: Must not exceed 8V Note2: Vcc must not exceed 7.5V for Junction Temperature between -10oC and -40oC Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. PACKAGE INFORMATION SW 5mm x 6mm POWER QFN VIN 11 12 10 PGnd θJA = 35 o C / W θJ -PCB = 2 o C / W Boot 13 Enable 14 1 ORDERING INFORMATION Rev 10.0 Seq 2 15 Gnd 3 4 5 FB COMP Gnd Rt 6 9 VCC 8 PGood 7 SS OCSet PACKAGE DESIGNATOR PACKAGE DESCRIPTION PIN COUNT PARTS PER REEL M IR3843WMTRPbF 15 4000 M IR3843WMTR1PbF 15 750 2 PD-97507 IR3843WMPbF Block Diagram Fig. 2. Simplified block diagram of the IR3843W Rev 10.0 3 PD-97507 IR3843WMPbF Pin Description Pin Name Description 1 Seq Sequence pin. Use two external resistors to set Simultaneous Power up sequencing. If this pin is not used connect to Vcc. 2 Fb 3 Comp 4 Gnd 5 Rt Set the switching frequency. Connect an external resistor from this pin to Gnd to set the switching frequency. 6 SS/SD ¯¯ Soft start / shutdown. This pin provides user programmable soft-start function. Connect an external capacitor from this pin to Gnd to set the start up time of the output voltage. The converter can be shutdown by pulling this pin below 0.3V. 7 OCSet Current limit set point. A resistor from this pin to SW pin will set the current limit threshold. 8 PGood Power Good status pin. Output is open drain. Connect a pull up resistor from this pin to Vcc. If unused, it can be left open. 9 VCC This pin powers the internal IC and the drivers. A minimum of 1uF high frequency capacitor must be connected from this pin to the power ground (PGnd). 10 PGnd Power Ground. This pin serves as a separated ground for the MOSFET drivers and should be connected to the system’s power ground plane. 11 SW Switch node. This pin is connected to the output inductor. 12 VIN Input voltage connection pin. 13 Boot 14 Enable 15 Gnd Rev 10.0 Inverting input to the error amplifier. This pin is connected directly to the output of the regulator via resistor divider to set the output voltage and provide feedback to the error amplifier. Output of error amplifier. An external resistor and capacitor network is typically connected from this pin to Fb pin to provide loop compensation. Signal ground for internal reference and control circuitry. Supply voltage for high side driver. A 0.1uF capacitor must be connected from this pin to SW. Enable pin to turn on and off the device. Use two external resistors to set the turn on threshold (see Enable section). Connect this pin to Vcc if it is not used. Signal ground for internal reference and control circuitry. 4 PD-97507 IR3843WMPbF Recommended Operating Conditions Symbol Vin Vcc Boot to SW Vo Io Fs Tj Definition Min Max 1.5 4.5 4.5 0.7 0 225 -40 16 5.5 5.5 0.9*Vin 2 1650 125 Input Voltage Supply Voltage Supply Voltage Output Voltage Output Current Switching Frequency Junction Temperature Units V A kHz o C Electrical Specifications Unless otherwise specified, these specification apply over 4.5V< Vcc<5.5V, Vin=12V, 0oC<Tj< 125oC. Typical values are specified at Ta = 25oC. Parameter Symbol Test Condition Min TYP MAX Units Power Loss Power Loss Ploss Vcc=5V, Vin=12V, Vo=1.8V, Io=2A, Fs=600kHz, L=3.3uH, Note4 0.394 W MOSFET Rds(on) Top Switch Rds(on)_Top Bottom Switch Rds(on)_Bot o VBoot -Vsw =5V, ID=2A, Tj=25 C o Vcc=5V, ID=2A, Tj=25 C 24.5 32 24.5 29.5 mΩ Reference Voltage Feedback Voltage VFB 0.7 o Accuracy o 0 C<Tj<125 C o o -40 C<Tj<125 C, Note3 V -1.0 +1.0 -2.0 +2.0 % Supply Current VCC Supply Current (Standby) ICC(Standby) Vcc Supply Current (Dyn) ICC(Dyn) SS=0V, No Switching, Enable low 500 SS=3V, Vcc=5V, Fs=500kHz Enable high 10 μA mA Under Voltage Lockout VCC-Start-Threshold VCC_UVLO_Start Vcc Rising Trip Level 3.95 4.15 VCC-Stop-Threshold Enable-Start-Threshold VCC_UVLO_Stop Vcc Falling Trip Level 3.65 3.85 4.05 Enable_UVLO_Start Supply ramping up 1.14 1.2 1.36 Enable-Stop-Threshold Enable_UVLO_Stop Supply ramping down 0.9 1.0 1.06 Enable leakage current Ien Enable=3.3V Rev 10.0 4.35 15 V μA 5 PD-97507 IR3843WMPbF Electrical Specifications (continued) Unless otherwise specified, these specifications apply over 4.5V< Vcc<5.5V, Vin=12V, 0oC<Tj< 125oC. Typical values are specified at Ta = 25oC. Parameter Symbol Test Condition Min TYP MAX Units 0.665 0.7 0.735 V Rt=59K 225 250 275 Rt=28.7K 450 500 550 Rt=9.31K, Note4 1350 1500 1650 Oscillator Rt Voltage Frequency FS kHz Vramp Note4 1.8 Vp-p Ramp Offset Ramp (os) Note4 0.6 V Min Pulse Width Dmin(ctrl) Note4 100 Ramp Amplitude Note4 Fixed Off Time Max Duty Cycle 130 Dmax Fs=250kHz 92 Vos Vfb-Vseq, Vseq=0.8V -10 200 ns % Error Amplifier Input Offset Voltage 0 +10 Input Bias Current IFb(E/A) -1 +1 Input Bias Current IVp(E/A) -1 +1 Isink(E/A) 0.40 0.85 1.2 Isource(E/A) 8 10 13 Sink Current Source Current Slew Rate Gain-Bandwidth Product DC Gain mV μA mA SR Note4 7 12 20 V/μs GBWP Note4 20 30 40 MHz Gain Note4 100 110 120 dB Vcc=4.5V 3.4 3.5 3.75 V 120 220 mV 1 V μA Maximum Voltage Vmax(E/A) Minimum Voltage Vmin(E/A) Note4 Common Mode Voltage 0 Soft Start/SD Soft Start Current Soft Start Clamp Voltage Shutdown Output Threshold ISS Source Vss(clamp) 14 20 26 2.7 3.0 3.3 SD 0.3 V Over Current Protection OCSET Current OC Comp Offset Voltage SS off time IOCSET VOFFSET Fs=250kHz 20.8 23.6 26.4 Fs=500kHz 43 48.8 54.6 Fs=1500kHz 136 154 172 Note4 -10 0 +10 SS_Hiccup 4096 μA mV Cycles Bootstrap Diode Forward Voltage I(Boot)=30mA 180 260 470 mV 5 10 30 ns Deadband Deadband time Rev 10.0 Note4 6 PD-97507 IR3843WMPbF Electrical Specifications (continued) Unless otherwise specified, these specification apply over 4.5V< Vcc<5.5V, Vin=12V, 0oC<Tj< 125oC. Typical values are specified at Ta = 25oC. Parameter SYM Test Condition Min TYP MAX Units Thermal Shutdown Thermal Shutdown Note4 140 Hysteresis Note4 20 o C Power Good Power Good upper Threshold Upper Threshold Delay Power Good lower Threshold Lower Threshold Delay Delay Comparator Threshold Delay Comparator Hysteresis PGood Voltage Low Leakage Current VPG(upper) Fb Rising VPG(upper)_Dly Fb Rising VPG(lower) Fb Falling VPG(lower)_Dly Fb Falling PG(Delay) Relative to charge voltage, SS rising Delay(hys) Note4 PG(voltage) IPGood=-5mA Ileakage 0.770 0.805 0.840 256/Fs 0.560 0.595 V s 0.630 256/Fs V s 2 2.1 2.3 V 260 300 340 mV 0 0.5 V 10 μA Switch Node SW Bias Current SW=0V, Enable=0V Isw SW=0V,Enable=high,SS=3V,Vseq=0V, Note4 6 μA Note3: Cold temperature performance is guaranteed via correlation using statistical quality control. Not tested in production. Note4: Guaranteed by Design but not tested in production. Rev 10.0 7 PD-97507 IR3843WMPbF TYPICAL OPERATING CHARACTERISTICS (-40oC - 125oC) Fs=500 kHz Ic(Dyn) Icc(Standby) 9.5 290 9.4 270 9.3 9.2 250 [mA] [uA] 9.1 230 210 9.0 8.9 8.8 190 8.7 170 8.6 150 8.5 -40 -20 0 20 40 60 80 100 120 -40 o Temp[ C] 0 20 100 120 80 100 120 80 100 120 80 100 120 80 100 120 IOCSET(500kHz) 53.0 52.0 520 51.0 510 50.0 [uA] 530 500 49.0 48.0 47.0 480 46.0 470 45.0 460 44.0 43.0 450 -40 -20 0 20 40 60 80 100 -40 120 -20 0 20 60 Temp[ C] Vcc(UVLO) Start 4.46 40 o o Temp[ C] Vcc(UVLO) Stop 4.16 4.41 4.11 4.36 4.06 4.31 4.01 [V] [V] 80 54.0 490 4.26 3.96 4.21 3.91 4.16 3.86 4.11 3.81 4.06 3.76 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 Temp[ oC] 40 60 Temp[ oC] Enable(UVLO) Start 1.36 Enable(UVLO) Stop 1.06 1.34 1.04 1.32 1.30 1.02 1.28 1.00 1.26 [V] [V] 60 o 540 1.24 0.98 1.22 0.96 1.20 0.94 1.18 0.92 1.16 1.14 0.90 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 60 Temp[ C] ISS 26.0 40 ο Temp[ oC] Vfb 711 24.0 706 [mV] 22.0 [uA] 40 Temp[ C] FREQUENCY 550 [kHz] -20 20.0 701 18.0 696 16.0 691 686 14.0 -40 -20 0 20 40 o 60 Temp[ C] Rev 10.0 80 100 120 -40 -20 0 20 40 60 o Temp[ C] 8 PD-97507 IR3843WMPbF Rdson of MOSFETs Over Temperature at Vcc=5V Note: Ctrl-FET and Sync-FET are identical. 36 34 Resistance [mΩ] 32 30 28 26 24 22 20 -40 -20 0 20 40 60 80 100 120 140 Temperature [°C] Ctrl-FET/Sync-FET Rev 10.0 9 PD-97507 IR3843WMPbF Typical Efficiency and Power Loss Curves Vin=12V, Vcc=5V, Io=0.2A-2A, Fs=600kHz, Room Temperature, No Air Flow The table below shows the inductors used for each of the output voltages in the efficiency measurement. Vout (V) L (uH) P/N DCR (mΩ) 0.9 2.2 IHLP2525EZ-01 2.2uH 13 1 2.2 IHLP2525EZ-01 2.2uH 13 1.1 2.2 IHLP2525EZ-01 2.2uH 13 1.2 2.2 IHLP2525EZ-01 2.2uH 13 1.5 3.3 IHLP2525EZ-01 3.3uH 19.9 1.8 3.3 IHLP2525EZ-01 3.3uH 19.9 2.5 4.7 IHLP2525EZ-01 4.7uH 28.9 3.3 4.7 IHLP2525EZ-01 4.7uH 28.9 5 5.6 IHLP2525EZ-01 5.6uH 32.7 96 94 92 90 Efficiency (%) 88 86 84 82 80 78 76 74 72 70 68 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Iout (A) 0.9V 1V 0.4 0.6 1.1V 1.2V 1.5V 1.8V 2.5V 3.3V 5V 0.55 0.5 0.45 Power Loss (W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.2 0.8 1 1.2 1.4 1.6 1.8 2 Iout (A) 0.9V Rev 10.0 1V 1.1V 1.2V 1.5V 1.8V 2.5V 3.3V 5V 10 PD-97507 IR3843WMPbF Typical Efficiency and Power Loss Curves Vin=5V, Vcc=5V, Io=0.2A-2A, Fs=600kHz, Room Temperature, No Air Flow The table below shows the inductors used for each of the output voltages in the efficiency measurement. Vout (V) L (uH) P/N DCR (mΩ) 0.7 1.5 PCMB065T-1R5MS 6.7 0.75 1.5 PCMB065T-1R5MS 6.7 0.9 1.5 PCMB065T-1R5MS 6.7 1 2.2 IHLP2525EZ-01 2.2uH 13 1.1 2.2 IHLP2525EZ-01 2.2uH 13 1.2 2.2 IHLP2525EZ-01 2.2uH 13 1.5 2.2 IHLP2525EZ-01 2.2uH 13 1.8 2.2 IHLP2525EZ-01 2.2uH 13 2.5 3.3 IHLP2525EZ-01 3.3uH 19.9 3.3 2.2 IHLP2525EZ-01 2.2uH 13 100 95 Efficiency (%) 90 85 80 75 70 65 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 1.5V 1.8V 2.5V 3.3V 1.4 1.6 1.8 2 Iout (A) 0.7V 0.75V 0.9V 1V 1.1V 1.2V 0.35 Power Loss (W) 0.3 0.25 0.2 0.15 0.1 0.05 0.2 0.4 0.6 0.8 1 1.2 Iout (A) 0.7V Rev 10.0 0.75V 0.9V 1V 1.1V 1.2V 1.5V 1.8V 2.5V 3.3V 11 PD-97507 IR3843WMPbF Circuit Description THEORY OF OPERATION Introduction The IR3843W uses a PWM voltage mode control scheme with external compensation to provide good noise immunity and maximum flexibility in selecting inductor values and capacitor types. The switching frequency is programmable from 250kHz to 1.5MHz and provides the capability of optimizing the design in terms of size and performance. IR3843W provides precisely regulated output voltage programmed via two external resistors from 0.7V to 0.9*Vin. If the input to the Enable pin is derived from the bus voltage by a suitably programmed resistive divider, it can be ensured that the IR3843W does not turn on until the bus voltage reaches the desired level. Only after the bus voltage reaches or exceeds this level will the voltage at Enable pin exceed its threshold, thus enabling the IR3843W. Therefore, in addition to being a logic input pin to enable the IR3843W, the Enable feature, with its precise threshold, also allows the user to implement an Under-Voltage Lockout for the bus voltage Vin. This is desirable particularly for high output voltage applications, where we might want the IR3843W to be disabled at least until Vin exceeds the desired output voltage level. The IR3843W operates with an external bias supply from 4.5V to 5.5V, allowing an extended operating input voltage range from 1.5V to 16V. The device utilizes the on-resistance of the low side MOSFET as current sense element, this method enhances the converter’s efficiency and reduces cost by eliminating the need for external current sense resistor. IR3843W includes two low Rds(on) MOSFETs using IR’s HEXFET technology. These are specifically designed for high efficiency applications. Under-Voltage Lockout and POR The under-voltage lockout circuit monitors the input supply Vcc and the Enable input. It assures that the MOSFET driver outputs remain in the off state whenever either of these two signals drop below the set thresholds. Normal operation resumes once Vcc and Enable rise above their thresholds. The POR (Power On Ready) signal is generated when all these signals reach the valid logic level (see system block diagram). When the POR is asserted the soft start sequence starts (see soft start section). Enable The Enable features another level of flexibility for start up. The Enable has precise threshold which is internally monitored by Under-Voltage Lockout (UVLO) circuit. Therefore, the IR3843W will turn on only when the voltage at the Enable pin exceeds this threshold, typically, 1.2V. Rev 10.0 Fig. 3a. Normal Start up, Device turns on when the Bus voltage reaches 10.2V Figure 3b. shows the recommended start-up sequence for the non-sequenced operation of IR3843W. Fig. 3b. Recommended startup sequence, Non-Sequenced operation Figure 3c. shows the recommended startup sequence for sequenced operation of IR3843W 12 PD-97507 IR3843WMPbF Fig. 5. Pre-Bias startup pulses Soft-Start Fig. 3c. Recommended startup sequence, Sequenced operation Pre-Bias Startup IR3843W is able to start up into pre-charged output, which prevents oscillation and disturbances of the output voltage. The IR3843W has a programmable soft-start to control the output voltage rise and to limit the current surge at the start-up. To ensure correct start-up, the soft-start sequence initiates when the Enable and Vcc rise above their UVLO thresholds and generate the Power On Ready (POR) signal. The internal current source (typically 20uA) charges the external capacitor Css linearly from 0V to 3V. Figure 6 shows the waveforms during the soft start. The output starts in asynchronous fashion and keeps the synchronous MOSFET off until the first gate signal for control MOSFET is generated. Figure 4 shows a typical Pre-Bias condition at start up. The start up time can be estimated by: The synchronous MOSFET always starts with a narrow pulse width and gradually increases its duty cycle with a step of 25%, 50%, 75% and 100% until it reaches the steady state value. The number of these startup pulses for the synchronous MOSFET is internally programmed. Figure 5 shows a series of 32, 16, 8 startup pulses. During the soft start the OCP is enabled to protect the device for any short circuit and over current condition. Fig. 4. Pre-Bias startup Rev 10.0 Tstart = (1.4 - 0.7) * CSS 20μA - - - - - - - - - - - - - - - - - - - - (1) Fig. 6. Theoretical operation waveforms during soft-start 13 PD-97507 IR3843WMPbF Operating Frequency The switching frequency can be programmed between 250kHz – 1500kHz by connecting an external resistor from Rt pin to Gnd. Table 1 tabulates the oscillator frequency versus Rt. Table 1. Switching Frequency and IOCSet vs. External Resistor (Rt) Rt (kΩ) 47.5 35.7 28.7 23.7 20.5 17.8 15.8 14.3 12.7 11.5 10.7 9.76 9.31 Fs (kHz) 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 Iocset (μA) 29.4 39.2 48.7 59.07 68.2 78.6 88.6 97.9 110.2 121.7 130.8 143.4 150.3 Shutdown The IR3843W can be shutdown by pulling the Enable pin below its 1 V threshold. This will tristate both, the high side driver as well as the low side driver. Alternatively, the output can be shutdown by pulling the soft-start pin below 0.3V. Normal operation is resumed by cycling the voltage at the Soft Start pin. Over-Current Protection The over current protection is performed by sensing current through the RDS(on) of low side MOSFET. This method enhances the converter’s efficiency and reduces cost by eliminating a current sense resistor. As shown in figure 7, an external resistor (ROCSet) is connected between OCSet pin and the switch node (SW) which sets the current limit set point. An internal current source sources current (IOCSet ) out of the OCSet pin. This current is a function of the switching frequency and hence, of Rt. Rev 10.0 I OCSet (μA ) = 1400 .......... .......... ...............( 2) R t (kΩ) Table 1. shows IOCSet at different switching frequencies. The internal current source develops a voltage across ROCSet. When the low side MOSFET is turned on, the inductor current flows through the Q2 and results in a voltage at OCSet which is given by: VOCSet = ( IOCSet ∗ ROCSet ) − ( RDS(on) ∗ I L ) ...........(3) Fig. 7. Connection of over current sensing resistor An over current is detected if the OCSet pin goes below ground. Hence, at the current limit threshold, VOCset=0. Then, for a current limit setting ILimit, ROCSet is calculated as follows: ROCSet = R DS (on) * I Limit IOCSet ........................ (4) An overcurrent detection trips the OCP comparator, latches OCP signal and cycles the soft start function in hiccup mode. The hiccup is performed by shorting the soft-start capacitor to ground and counting the number of switching cycles. The Soft Start pin is held low until 4096 cycles have been completed. The OCP signal resets and the converter recovers. After every soft start cycle, the converter stays in this mode until the overload or short circuit is removed. The OCP circuit starts sampling current typically 160 ns after the low gate drive rises to about 3V. This delay functions to filter out switching noise. 14 PD-97507 IR3843WMPbF Thermal Shutdown Temperature sensing is provided inside IR3843W. The trip threshold is typically set to 140oC. When trip threshold is exceeded, thermal shutdown turns off both MOSFETs and discharges the soft start capacitor. 1.5V <Vin<16V 4.5V <Vcc<5.5V Enable Vin Boot Vo(master) Vcc SW PGood PGood Automatic restart is initiated when the sensed temperature drops within the operating range. There is a 20oC hysteresis in the thermal shutdown threshold. OCSet Seq RA Fb Rt RB SS/ SD Output Voltage Sequencing The IR3843W can accommodate user programmable sequencing using Seq, Enable and Power Good pins. Gnd PGnd Comp 1.5V <Vin<16V 4.5V <Vcc<5.5V Enable Vin Boot Vo(slave) Vcc Vo(master) SW PGood Vo1 RE PGood OCSet Seq Vo2 RF Rt SS/ SD RC Fb RD Gnd PGnd Comp Simultaneous Powerup Fig. 8a. Simultaneous Power-up of the slave with respect to the master. Through these pins, voltage sequencing such as simultaneous and sequential can be implemented. Figure 8. shows simultaneous sequencing configurations. In simultaneous power-up, the voltage at the Seq pin of the slave reaches 0.7V before the Fb pin of the master. For RE/RF =RC/RD, therefore, the output voltage of the slave follows that of the master until the voltage at the Seq pin of the slave reaches 0.7 V. After the voltage at the Seq pin of the slave exceeds 0.85V, the internal 0.7V reference of the slave dictates its output voltage. It is recommended that irrespective of the sequencing configuration used, the input voltage should be allowed to come up to its nominal value first, followed by Vcc and Enable, before the sequencing signal is applied. For non-sequenced operation, the Seq pin should be tied to a voltage greater than 0.85V, such as 3.3V or Vcc. Again, the input voltage should be allowed to come up before Vcc and Enable. Rev 10.0 Fig. 8b. Application Circuit for Simultaneous Sequencing Power Good Output The IC continually monitors the output voltage via Feedback (Fb pin). The feedback voltage forms an input to a window comparator whose upper and lower thresholds are 0.805V and 0.595V respectively. Hence, the Power Good signal is flagged when the Fb pin voltage is within the PGood window, i. e., between 0.595V to 0.805V, as shown in Fig .9 The PGood pin is open drain and it needs to be externally pulled high. High state indicates that output is in regulation. Fig. 9a shows the PGood timing diagram for nontracking operation. In this case, during startup, PGood goes high after the SS voltage reaches 2.1V if the Fb voltage is within the PGood comparator window. Fig. 9a. and Fig 9.b. also show a 256 cycle delay between the Fb voltage entering within the thresholds defined by the PGood window and PGood going high. 15 PD-97507 IR3843WMPbF TIMING DIAGRAM OF PGOOD FUNCTION Fig.9a IR3843W Non-Tracking Operation (Seq=Vcc) Fig.9b IR3843W Tracking Operation Rev 10.0 16 PD-97507 IR3843WMPbF Minimum on time Considerations Maximum Duty Ratio Considerations The minimum ON time is the shortest amount of time for which the Control FET may be reliably turned on, and this depends on the internal timing delays. For the IR3843W, the typical minimum on-time is specified as 100 ns. Any design or application using the IR3843W must ensure operation with a pulse width that is higher than this minimum on-time and preferably higher than 150 ns. This is necessary for the circuit to operate without jitter and pulseskipping, which can cause high inductor current ripple and high output voltage ripple. A fixed off-time of 200 ns maximum is specified for the IR3843W. This provides an upper limit on the operating duty ratio at any given switching frequency. It is clear that, higher the switching frequency, the lower is the maximum duty ratio at which the IR3843W can operate. To allow a margin of 50ns, the maximum operating duty ratio in any application using the IR3843W should still accommodate about 250 ns off-time. Fig 10. shows a plot of the maximum duty ratio v/s the switching frequency, with 250 ns off-time. D Fs M a x Duty Cycle Vout = Vin × Fs In any application that uses the IR3843W, the following condition must be satisfied: t on (min) ≤ t on ∴ t on (min) ≤ Vout t on(min) The minimum output voltage is limited by the reference voltage and hence Vout(min) = 0.7 V. Therefore, for Vout(min) = 0.7 V, ∴ Vin × Fs ≤ 95 90 85 80 75 70 65 60 55 250 Vout Vin × Fs ∴ Vin × Fs ≤ Max D uty C ycle (% ) t on = 450 650 850 1050 1250 1450 1650 S w itching Frequency (kH z ) Fig. 10. Maximum duty cycle v/s switching frequency. Vout (min) ∴ Vin × Fs ≤ t on(min) 0.7 V = 4.67 × 10 6 V/s 150 ns Therefore, at the maximum recommended input voltage 16V and minimum output voltage, the converter should be designed at a switching frequency that does not exceed 290 kHz. However, practical considerations dictate that any application that demands a pulse width smaller than 175ns may not exhibit jitter free operation over the entire load range. This means that for 16 V input voltage, the operation frequency should be limited to 250 kHz. Rev 10.0 17 PD-97507 IR3843WMPbF when an external resistor divider is connected to the output as shown in figure 11. Equation (7) can be rewritten as: Application Information Design Example: The following example is a typical application for IR3843W. The application circuit is shown on page 23. Vin = 12 V ( 13.2V max) ⎛ V R9 = R8 ∗ ⎜⎜ ref ⎝ V o−Vref ⎞ ⎟ ..................................(8) ⎟ ⎠ For the calculated values of R8 feedback compensation section. Vo = 1.8 V Io = 2 A VOUT ΔVo ≤ 54mV IR3843W IR3624 Fs = 600 kHz R9 As explained earlier, the precise threshold of the Enable lends itself well to implementation of a UVLO for the Bus Voltage. V in IR3843W Enable R1 R2 For a typical Enable threshold of VEN = 1.2 V R2 = VEN = 1.2 .......... (5) R1 + R 2 VEN R 2 = R1 .......... (6) Vin( min ) − VEN For a Vin (min)=10.2V, R1=49.9K and R2=7.5K is a good choice. Programming the frequency For Fs = 600 kHz, select Rt = 23.7 kΩ, using Table. 1. Output Voltage Programming Output voltage is programmed by reference voltage and external voltage divider. The Fb pin is the inverting input of the error amplifier, which is internally referenced to 0.7V. The divider is ratioed to provide 0.7V at the Fb pin when the output is at its desired value. The output voltage is defined by using the following equation: ⎛ R ⎞ Vo = Vref ∗ ⎜⎜1 + 8 ⎟⎟ ...................................(7) ⎝ R9 ⎠ Rev 10.0 R8 Fb Enabling the IR3843W Vin(min) * and R9 see Fig. 11. Typical application of the IR3843W for programming the output voltage Soft-Start Programming The soft-start timing can be programmed by selecting the soft-start capacitance value. From (1), for a desired start-up time of the converter, the soft start capacitor can be calculated by using: C SS (μF) = Tstart ( ms ) × 0.02857 .......... (9) Where Tstart is the desired start-up time (ms). For a start-up time of 3.5ms, the soft-start capacitor will be 0.099μF. Choose a 0.1μF ceramic capacitor. Bootstrap Capacitor Selection To drive the Control FET, it is necessary to supply a gate voltage at least 4V greater than the voltage at the SW pin, which is connected the source of the Control FET . This is achieved by using a bootstrap configuration, which comprises the internal bootstrap diode and an external bootstrap capacitor (C6), as shown in Fig. 12.. The operation of the circuit is as follows: When the lower MOSFET is turned on, the capacitor node connected to SW is pulled down to ground. The capacitor charges towards Vcc through the internal bootstrap diode, which has a forward voltage drop VD. The voltage Vc across the bootstrap capacitor C6 is approximately given as Vc ≅ Vcc − VD .......... ................ (10) When the upper MOSFET turns on in the next cycle, the capacitor node connected to SW rises to the bus voltage Vin. However, if the value of C6 is appropriately chosen, 18 PD-97507 IR3843WMPbF the voltage Vc across C6 remains approximately unchanged and the voltage at the Boot pin becomes VBoot ≅ Vin + Vcc − VD ........................................ (11) VIN Boot Vcc C6 IR3843W + Vc - SW L Inductor Selection The inductor is selected based on output power, operating frequency and efficiency requirements. A low inductor value causes large ripple current, resulting in the smaller size, faster response to a load transient but poor efficiency and high output noise. Generally, the selection of the inductor value can be reduced to the desired maximum ripple current in the inductor (Δi ). The optimum point is usually found between 20% and 50% ripple of the output current. For the buck converter, the inductor value for the desired operating ripple current can be determined using the following relation: Δi 1 ; Δt = D ∗ Δt Fs .......... .......... .......... . (14) Vo L = (Vin − Vo ) ∗ Vin ∗ Δi * Fs Vin − Vo = L ∗ PGnd Fig. 12. Bootstrap circuit to generate Vc voltage A bootstrap capacitor of value 0.1uF is suitable for most applications. Where: Vin = Maximum input voltage Vo = Output Voltage Input Capacitor Selection The ripple current generated during the on time of the upper MOSFET should be provided by the input capacitor. The RMS value of this ripple is expressed by: IRMS = Io ∗ D ∗ (1 − D) ........................(12) D= Vo ................................ (13) Vin Δi = Inductor ripple current F s = Switching frequency Δt = Turn on time D = Duty cycle If Δi ≈ 40%(Io), then the output inductor is calculated to be 3.19μH. Select L=3.3 μH. The IHLP2525EZ-01 3.3uH from Vishay provides a compact, low profile inductor suitable for this application Where: D is the Duty Cycle IRMS is the RMS value of the input capacitor current. Io is the output current. For Io=2A and D = 0.15, the IRMS = 0.71 A. Ceramic capacitors are recommended due to their peak current capabilities. They also feature low ESR and ESL at higher frequency which enables better efficiency. For this application, it is advisable to have 1x10uF 25V ceramic capacitor C3216X5R1E106M from TDK. In addition to these, although not mandatory, a 1X330uF, 25V SMD capacitor EEV-FK1E331P may also be used as a bulk capacitor and is recommended if the input power supply is not located close to the converter. Rev 10.0 . 19 PD-97507 IR3843WMPbF Output Capacitor Selection The voltage ripple and transient requirements determine the output capacitors type and values. The criteria is normally based on the value of the Effective Series Resistance (ESR). However the actual capacitance value and the Equivalent Series Inductance (ESL) are other contributing components. These components can be described as ΔVo = ΔVo( ESR ) + ΔVo( ESL ) + ΔVo(C ) ⎛ V − Vo ⎞ ΔVo( ESL ) = ⎜⎜ in ⎟⎟ * ESL L ⎝ ⎠ voltage ΔI L = Inductor ripple 2 ∗ π Lo ∗ Co ................................ (16) Phase Gain 0 dB 00 -40dB/decade ripple current Since the output capacitor has a major role in the overall performance of the converter and determines the result of transient response, selection of the capacitor is critical. The IR3843W can perform well with all types of capacitors. As a rule, the capacitor must have low enough ESR to meet output ripple and load transient requirements. The goal for this design is to meet the voltage ripple requirement in the smallest possible capacitor size. Therefore it is advisable to select ceramic capacitors due to their low ESR and ESL and small size. Two of the Panasonic ECJ2FB0J226ML (22uF, 6.3V, 3mOhm) capacitors is a good choice. Feedback Compensation The IR3843W is a voltage mode controller. The control loop is a single voltage feedback path including error amplifier and error comparator. To achieve fast transient response and accurate output regulation, a compensation circuit is necessary. The goal of the compensation network is to provide a closed-loop transfer function with the highest 0 dB crossing frequency and adequate phase margin (greater than 45o). Rev 10.0 1 .......... .......... ..... (15) ΔI L 8 * C o * Fs ΔVo = Output FLC = Figure 13 shows gain and phase of the LC filter. Since we already have 180o phase shift from the output filter alone, the system runs the risk of being unstable. ΔVo( ESR ) = ΔI L * ESR ΔVo(C ) = The output LC filter introduces a double pole, –40dB/decade gain slope above its corner resonant frequency, and a total phase lag of 180o (see figure 13). The resonant frequency of the LC filter is expressed as follows: -1800 FLC Frequency FLC Frequency Fig. 13. Gain and Phase of LC filter The IR3843W uses a voltage-type error amplifier with high-gain (110dB) and wide-bandwidth. The output of the amplifier is available for DC gain control and AC phase compensation. The error amplifier can be compensated either in type II or type III compensation. Local feedback with Type II compensation is shown in Fig. 14. This method requires that the output capacitor should have enough ESR to satisfy stability requirements. In general the output capacitor’s ESR generates a zero typically at 5kHz to 50kHz which is essential for an acceptable phase margin. The ESR zero of the output capacitor is expressed as follows: FESR = 1 .......... .......... ....... (17) 2 ∗ π*ESR*C o 20 PD-97507 IR3843WMPbF VOUT Z IN C POLE R3 C4 R8 Zf Fb R9 Gain(dB) E/A Comp Ve To cancel one of the LC filter poles, place the zero before the LC filter resonant frequency pole: Fz = 75%FLC VREF Fz = 0.75* H(s) dB FZ F POLE Frequency Fig. 14. Type II compensation network and its asymptotic gain plot The transfer function (Ve/Vo) is given by: Ve 1 + sR3C4 Z = H(s) = − f = − .....(18) ZIN sR8C4 Vo The (s) indicates that the transfer function varies as a function of frequency. This configuration introduces a gain and zero, expressed by: H(s) = Where: Vin = Maximum Input Voltage Vosc = Oscillator Ramp Voltage Fo = Crossover Frequency FESR = Zero Frequency of the Output Capacitor FLC = Resonant Frequency of the Output Filter R8 = Feedback Resistor R3 ......................................(19) R8 1 Fz = ............................(20) 2π * R3 * C4 First select the desired zero-crossover frequency (Fo): Fo > FESR and Fo ≤ (1/5 ~ 1/10) * Fs Vosc * Fo * FESR * R8 2 Vin * FLC ...........................(21) FP = .....................................(22) 1 .................................(23) C4 * CPOLE 2π * R3 * C4 + CPOLE The pole sets to one half of the switching frequency which results in the capacitor CPOLE: CPOLE = 1 π*R3*Fs − 1 C4 ≅ 1 ......................(24) π*R3*Fs For a general solution for unconditional stability for any type of output capacitors, and a wide range of ESR values, we should implement local feedback with a type III compensation network. The typically used compensation network for voltage-mode controller is shown in figure 15. Again, the transfer function is given by: Ve Z = H(s) = − f Vo ZIN By replacing Zin and Zf according to figure 15, the transfer function can be expressed as: H(s) = − Rev 10.0 2π Lo * Co Use equations (20), (21) and (22) to calculate C4. One more capacitor is sometimes added in parallel with C4 and R3. This introduces one more pole which is mainly used to suppress the switching noise. The additional pole is given by: Use the following equation to calculate R3: R3 = 1 (1 + sR3C4 )[1 + sC7 (R8 + R10 )] ⎡ ⎛ C * C3 ⎞⎤ ⎟⎥(1 + sR10C7 ) sR8 (C4 + C3 )⎢1 + sR3 ⎜⎜ 4 ⎟ ⎝ C4 + C3 ⎠⎦⎥ ⎣⎢ 21 ....(25) PD-97507 IR3843WMPbF VOUT ZIN C3 C7 R3 R10 C4 R8 Zf Fb R9 Gain(dB) E/A Comp Ve FZ2 FP2 FP3 Frequency Fig.15. Type III Compensation network and its asymptotic gain plot The compensation network has three poles and two zeros and they are expressed as follows: FP1 = 0 ..................................................................(26) FP 2 = 1 ...............................................(27) 2π * R10 * C7 1 FP3 = FZ1 ≅ 1 ...............(28) 2π * R3 * C3 ⎛ C * C3 ⎞ ⎟ 2π * R3 ⎜⎜ 4 ⎟ ⎝ C4 + C3 ⎠ 1 = .............................................(29) 2π * R3 * C4 FZ 2 = 1 1 ≅ ..........(30) 2π * C7 * (R8 + R10 ) 2π * C7 * R8 Cross over frequency is expressed as: Fo = R3 * C7 * Vin 1 * ................................(31) Vosc 2π * Lo * Co Based on the frequency of the zero generated by the output capacitor and its ESR, relative to crossover frequency, the compensation type can be different. The table below shows the compensation types and location of the crossover frequency. Rev 10.0 FESR vs Fo Output Capacitor Type II FLC<FESR<Fo<Fs/2 Electrolytic Tantalum Type III FLC<Fo<FESR Tantalum Ceramic VREF H(s) dB FZ1 Compensator Type The higher the crossover frequency, the potentially faster the load transient response. However, the crossover frequency should be low enough to allow attenuation of switching noise. Typically, the control loop bandwidth or crossover frequency is selected such that Fo ≤ (1/5 ~ 1/10) * Fs The DC gain should be large enough to provide high DC-regulation accuracy. The phase margin should be greater than 45o for overall stability. For this design we have: Vin=12V Vo=1.8V Vosc=1.8V Vref=0.7V Lo=3.3 uH Co=2x22uF, ESR=3mOhm each It must be noted here that the value of the capacitance used in the compensator design must be the small signal value. For instance, the small signal capacitance of the 22uF capacitor used in this design is 12uF at 1.8 V DC bias and 600 kHz frequency. It is this value that must be used for all computations related to the compensation. The small signal value may be obtained from the manufacturer’s datasheets, design tools or SPICE models. Alternatively, they may also be inferred from measuring the power stage transfer function of the converter and measuring the double pole frequency FLC and using equation (16) to compute the small signal Co. These result to: FLC=17.88 kHz FESR=4.4 MHz Fs/2=300 kHz Select crossover frequency: Fo=80 kHz Since FLC<Fo<Fs/2<FESR, TypeIII is selected to place the pole and zeros. 22 PD-97507 IR3843WMPbF Detailed calculation of compensation TypeIII Desired Phase Margin Θ = 70 FZ 2 = Fo 1 − sin Θ = 14.11 kHz 1 + sin Θ FP 2 = Fo 1 + sin Θ = 453.7 kHz 1 − sin Θ o Programming the Current-Limit The Current-Limit threshold can be set by connecting a resistor (ROCSET) from the SW pin to the OCSet pin. The resistor can be calculated by using equation (4). This resistor ROCSET must be placed close to the IC. The RDS(on) has a positive temperature coefficient and it should be considered for the worst case operation. Select : FZ 1 = 0.5 * FZ 2 = 7.05 kHz and FP 3 = 0.5 * Fs = 300 kHz Select : C7 = 2.2 nF Calculate R3 , C3 and C4 : 2π * Fo * Lo * Co * Vosc ; R3 = 2.71 kΩ C7 * Vin R3 = Select : R3 = 2.74 kΩ C4 = 1 ; C4 = 8.24 nF, Select : C4 = 8.2 nF 2π * FZ1 * R 3 C3 = 1 ; C3 = 193.62 pF , Select : C3 = 180 pF 2π * FP 3 * R3 Calculate R10 , R8 and R9 : R10 = 1 ; R10 = 160 Ω , Select : R10 = 158 Ω 2π * C7 * FP 2 R8 = 1 - R10 ; R8 = 5 kΩ , 2π * C7 * FZ 2 ISET = IL (critical) = ROCSet∗ IOCSet .......................(32) RDS(on) RDS(on) = 24.5 mΩ *1.25 = 30.625 mΩ ISET ≅ I o(LIM) = 2 A * 1.5 = 3 A (50% over nominal output current ) IOCSet = 59.07 μA (at Fs = 600kHz) ROCSet = 1.55 kΩ Select R7 = 1.54 kΩ Setting the Power Good Threshold A window comparator internally sets a lower Power Good threshold at 0.6V and an upper Power Good threshold at 0.8V. When the voltage at the FB pin is within the window set by these thresholds, PGood is asserted. The PGood is an open drain output. Hence, it is necessary to use a pull up resistor RPG from PGood pin to Vcc. The value of the pull-up resistor must be chosen such as to limit the current flowing into the PGood pin, when the output voltage is not in regulation, to less than 5 mA. A typical value used is 10 kΩ. Select : R8 = 4.99 kΩ R9 = Vref * R8 ; R9 = 3.18 kΩ Select : R9 = 3.16 kΩ Vo - Vref Rev 10.0 23 PD-97507 IR3843WMPbF Application Diagram: Fig. 16. Application circuit diagram for a 12V to 1.8 V, 2 A Point Of Load Converter Suggested Bill of Materials for the application circuit: Part Reference Cin Description SMD Elecrolytic, Fsize, 25V, 20% 1206, 25V, X5R, 20% 1uF, 10V, X5R,0805 3.3uH,8A,20%,6.5MMx7MM 0805, 6.3V, X5R, 20% 49.9K,0603,1/10 W,1% 7.5K,0603,1/10W,1% Thick Film, 0603,1/10W,1% 0603,1/10 W,1% Manufacturer Panasonic TDK Panasonic Vishay/Dale Panasonic Rohm Rohm Rohm Rohm Part Number EEV-FK1E331P C3216X5R1E106M ECJ-2FB1C105K IHLP2525EZ-01 3.3uH ECJ-2FB0J226M MCR03EZPFX4992 MCR03EZPFX7501 MCR03EZPFX2372 MCR03EZPFX1541 RPG Css R3 Value 330uF 10uF 1uF 3.3uH 22uF 49.9k 7.5k 23.7k 1 1.54K 1 10K 1 0.1uF 1 2.74k 0603,1/10 W,1% 0603, 25V, X7R, 10% 0603,1/10W,1% Rohm Panasonic - ECG Rohm MCR03EZPFX1002 ECJ-1VB1E104K MCR03EZPFX2741 C3 C4 R8 R9 R10 C7 U1 1 1 1 1 1 1 1 50V, 0603, NP0, 5% 0603, 50V, X7R, 10% 0603,1/10W,1% 0603,1/10W,1% 0603,1/10W,1% 0603, 50V, X7R, 10% SupIRBuck PQFN 5x6mm Murata Panasonic - ECG Rohm Rohm Panasonic Panasonic - ECG International Rectifier GRM1885C1H181JA01D ECJ-1VB1H822K MCR03EZPFX4991 MCR03EZPFX3161 ERJ-3EKF1580V ECJ-1VB1H222K IR3843WMPbF CVcc Lo Co R1 R2 Rt ROCSet Rev 10.0 Quantity 1 1 1 1 2 1 1 1 180pF 8200pF 4.99k 3.16k 158 2200pF IR3843W 24 PD-97507 IR3843WMPbF TYPICAL OPERATING WAVEFORMS Vin=12.0V, Vcc=5V, Vo=1.8V, Io=0-2A, Room Temperature, No Air Flow Fig. 17. Start up at 2A Load Ch1:Vin, Ch2:Vo, Ch3:Vss, Ch4:Enable Fig. 18. Start up at 2A Load, Ch1:Vin, Ch2:Vo, Ch3:Vss, Ch4:VPGood Fig. 19. Start up with 1.62V Pre Bias, 0A Load, Ch2:Vo, Ch3:VSS Fig. 20. Output Voltage Ripple, 2A load Ch2: Vo Fig. 21. Inductor node at 2A load Ch2:LX Fig. 22. Short (Hiccup) Recovery Ch2:Vo , Ch3:VSS Rev 10.0 25 PD-97507 IR3843WMPbF TYPICAL OPERATING WAVEFORMS Vin=12V, Vcc=5V, Vo=1.8V, Io=1A-2A, Room Temperature, No Air Flow Fig. 23. Transient Response, 1A to 2A step 2.5A/μs Ch1:Vo, Ch4:Io Rev 10.0 26 PD-97507 IR3843WMPbF TYPICAL OPERATING WAVEFORMS Vin=12V, Vcc=5V, Vo=1.8V, Io=2A, Room Temperature, No Air Flow Fig. 24. Bode Plot at 2A load shows a bandwidth of 86kHz and phase margin of 56 degrees Rev 10.0 27 PD-97507 IR3843WMPbF Simultaneous Tracking at Power Up and Power Down Vin=12V, Vo=1.8V, Io=2A, Room Temperature, No Air Flow VOUT 3.3V 4.99K R s1 3.16K Rs2 IR3843W IR3624 Seq R8 4.99K Fb R9 3.16K Fig. 25: Simultaneous Tracking a 3.3V input at power-up and shut-down Ch2: Vout Ch3:SS Ch4: Seq Rev 10.0 28 PD-97507 IR3843WMPbF Layout Considerations The layout is very important when designing high frequency switching converters. Layout will affect noise pickup and can cause a good design to perform with less than expected results. Make all the connections for the power components in the top layer with wide, copper filled areas or polygons. In general, it is desirable to make proper use of power planes and polygons for power distribution and heat dissipation. The inductor, output capacitors and the IR3843W should be as close to each other as possible. This helps to reduce the EMI radiated by the power traces due to the high switching currents through them. Place the input capacitor directly at the Vin pin of IR3843W. The feedback part of the system should be kept away from the inductor and other noise sources. The critical bypass components such as capacitors for Vcc should be close to their respective pins. It is important to place the feedback components including feedback resistors and compensation components close to Fb and Comp pins. The connection between the OCSet resistor and the Sw pin should not share any trace with the connection between the bootstrap capacitor and the Sw pin. Instead, it is recommended to use a Kelvin connection of the trace from the OCSet resistor and the trace from the bootstrap Vin capacitor at the Sw pin. PGnd In a multilayer PCB use one layer as a power ground plane and have a control circuit ground (analog ground), to which all signals are referenced. The goal is to localize the high current path to a separate loop that does not Vout interfere with the more sensitive analog control AGnd function. These two grounds must be connected together on the PC board layout at a single point. The Power QFN is a thermally enhanced package. Based on thermal performance it is recommended to use at least a 4-layers PCB. To effectively remove heat from the device the exposed pad should be connected to the ground plane using vias. Figure 26 illustrates the implementation of the layout guidelines outlined above, on the IRDC3843W 4 layer demoboard. Vin PGnd Vout AGnd Enough copper & minimum length ground path between Input and Output PGnd Compensation parts should be placed as close as possible to the Comp pin. Vin Vin Resistors Rt and Rocset should be placed as close as possible to their pins. All bypass caps should be placed as close as possible to their connecting pins. PGnd AGnd AGnd Vout Vout Fig. 26a. IRDC3843W demoboard layout considerations – Top Layer Rev 10.0 29 PD-97507 IR3843WMPbF PGnd Feedback trace should be kept away form noise sources Fig. 26b. IRDC3843W demoboard layout considerations – Bottom Layer Analog Ground plane Power Vin Ground Plane Single point connection between AGND & PGND, should be close to the SupIRBuck, kept away from noise sources. AGnd Fig. 26c. IRDC3843W demoboard layout considerations – Mid Layer 1 Use separate traces for connecting Boot cap and Rocset to the switch node and with the minimum length traces. Avoid big loops. Fig. 26d. IRDC3843W demoboard layout considerations – Mid Layer 2 Rev 10.0 30 PD-97507 IR3843WMPbF PCB Metal and Components Placement Lead lands (the 11 IC pins) width should be equal to nominal part lead width. The minimum lead to lead spacing should be ≥ 0.2mm to minimize shorting. Lead land length should be equal to maximum part lead length + 0.3 mm outboard extension. The outboard extension ensures a large and inspectable toe fillet. Pad lands (the 4 big pads other than the 11 IC pins) length and width should be equal to maximum part pad length and width. However, the minimum metal to metal spacing should be no less than 0.17mm for 2 oz. Copper; no less than 0.1mm for 1 oz. Copper and no less than 0.23mm for 3 oz. Copper. Rev 10.0 31 PD-97507 IR3843WMPbF Solder Resist It is recommended that the lead lands are Non Solder Mask Defined (NSMD). The solder resist should be pulled away from the metal lead lands by a minimum of 0.025mm to ensure NSMD pads. The land pad should be Solder Mask Defined (SMD), with a minimum overlap of the solder resist onto the copper of 0.05mm to accommodate solder resist mis-alignment. Ensure that the solder resist in-between the lead lands and the pad land is ≥ 0.15mm due to the high aspect ratio of the solder resist strip separating the lead lands from the pad land. Rev 10.0 32 PD-97507 IR3843WMPbF Stencil Design • • The Stencil apertures for the lead lands should be approximately 80% of the area of the lead lads. Reducing the amount of solder deposited will minimize the occurrences of lead shorts. If too much solder is deposited on the center pad the part will float and the lead lands will be open. The maximum length and width of the land pad stencil aperture should be equal to the solder resist opening minus an annular 0.2mm pull back to decrease the incidence of shorting the center land to the lead lands when the part is pushed into the solder paste. Rev 10.0 33 PD-97507 IR3843WMPbF BOTTOM VIEW IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 This product has been designed and qualified for the Consumer market Visit us at www.irf.com for sales contact information Data and specifications subject to change without notice. 01/09 Rev 10.0 34