PD - 93803
IRF1205
PROVISIONAL
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175 °C Operating Temprature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.027Ω
G
Description
ID = 41A
S
Fifth Generation MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universely preferred for all
commercial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
I DM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
41
29
164
83
0.56
± 20
190
25
8.3
5.0
-55 to + 175
Mounting torque, 6-32 or M3 screw
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.8
–––
62
°C/W
1
11/3/99
IRF1205
PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.9
44
34
35
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1200
390
140
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.027
Ω
VGS = 10V, ID = 25A
4.0
V
V DS = V GS, ID = 250µA
–––
S
VDS = 25V, ID = 25A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
V GS = 20V
nA
-100
VGS = -20V
50
ID = 25A
10
nC VDS = 44V
21
VGS = 10V
–––
VDD = 28V
–––
ID = 25A
ns
–––
RG = 9.1Ω
–––
RD = 1.1Ω
Between lead,
–––
6mm (0.25in.)
G
nH
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 41
showing the
A
G
integral reverse
––– ––– 164
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS =25A, VGS = 0V
––– 63
94
ns
TJ = 25°C, IF = 25A
140 210
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%
max. junction temperature.
VDD=25V, Starting TJ = 25°C, L = 610µH
RG = 25Ω, IAS = 25A
Calculated continuous current based on maximum allowable junction
ISD ≤25A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
Use IRFR/U1205 Data and Test conditons.
TJ ≤ 175°C
2
temperature: Package limitation current = 20A
www.irf.com
IRF1205
PROVISIONAL
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .87 (.1 13)
2 .62 (.1 03)
10.54 (.4 15)
10.29 (.4 05)
-B-
3 .78 (.149)
3 .54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.05 2)
1.22 (.04 8)
6.47 (.255)
6.10 (.240)
4
1 5.24 (.600)
1 4.84 (.584)
1.15 (.045)
MIN
1
2
1 4.09 (.555)
1 3.47 (.530)
4 .06 (.160)
3 .55 (.140)
3X
3X
LE AD AS SIG NM ENT S
1 - G ATE
2 - D RA IN
3 - S OU RC E
4 - D RA IN
3
1.40 (.055 )
1.15 (.045 )
0 .93 (.0 37)
0 .69 (.0 27)
0.36 (.01 4)
3X
M
B A M
2.92 (.115 )
2.64 (.104 )
2 .54 (.100)
2X
N O TES :
1 DIM EN SIO NING & TO LER A NC ING PE R A NSI Y14.5M, 1982.
2 CO N TRO LLING D IM EN S IO N : IN CH
0.55 (.0 22)
0.46 (.0 18)
3 O UTLINE C ON F OR MS TO JE DEC OUT LINE TO -22 0AB .
4 H EA TS IN K & LE AD M EA SUR E ME NTS D O NO T INC LU DE BU RR S .
TO-220AB Part Marking Information
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN TE R N A TIO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CO DE
PART NU MBER
IR F 10 1 0
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
11/99
www.irf.com
3