E
®
HEXFET
Advanced Process Technology
3205
Power MOSFET
VDSS = 54 V
Ultra Low On-Resistance
Dynamic dv/dt Rating
ID25 = 110A
175°C Operating Temperature
Fast Switching Fully Avalanche Rated
RDS(ON) = 0.009 Ω
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
Pin1–Gate
commercial-industrial applications at power dissipation
Pin2–Drain
levels to approximately 50 watts. The low thermal
Pin3–Source
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
Max.
Continuous Drain Current, VGS @ 10V
110
Continuous Drain Current, VGS @ 10V
80
IDM
Pulsed Drain Current ①
390
PD @TC = 25°C
Power Dissipation
150
W
Linear Derating Factor
1.3
W/°C
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
ID @ TC =
100°C
Units
A
VGS
IAR
EAR
Avalanche Current①
62
A
Repetitive Avalanche Energy①
20
mJ
dv/dt
Peak Diode Recovery dv/dt . ③
5.0
V/ns
TJ
Operating Junction and
Storage Temperature Range
-55 to + 175
TSTG
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from
case )
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
1
E
®
HEXFET
3205
Power MOSFET
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Typ.
Max.
Junction-to-Case
–––
0.75
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
△V(BR)DSS/△TJ Breakdown Voltage Temp. Coefficient
54
—
—
—
0.057
—
V
Test Conditions
VGS=0V,ID=250uA
V/ْC Reference to 25ْC,ID=1mA
RDS(on)
Static Drain-to-Source On-Resistance
—
—
9.0 mΩ VGS=10V,ID=62A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS=VGS, ID=250μA
gfs
Forward Transconductance
35
—
—
S
VDS=25V,ID=62A
IDSS
Drain-to-Source Leakage current
—
—
25
—
—
250
Gate-to-Source Forward leakage
—
—
100
Gate-to-Source Reverse leakage
—
—
-100
Qg
Total Gate Charge
—
—
146
Qgs
Gate-to-Source charge
—
—
35
—
—
54
Turn-on Delay Time
—
14
—
Rise Time
—
101
—
Turn-Off Delay Time
—
50
—
Fall Time
—
65
—
IGSS
Qgd
td(on)
tr
td(off)
tf
Gate-to-Drain ("Miller") charge
LD
Internal Drain Inductance
—
4.5
—
LS
Internal Source Inductance
—
7.5
—
Ciss
Input Capacitance
— 3247 —
Coss
Output Capacitance
—
781
—
Crss
Reverse Transfer Capacitance
—
211
—
EAS
Single Pulse Avalanche Energy.
— 1050 264
2
μA
nA
④
④
VDS=55V,VGS=0V
VDS=44V,VGS=0V,TJ=150ْC
VGS=20V
VGS=-20V
ID=62A
VDS=44V
nC
VGS=10V See Fig.6 and 13
④
VDD=28V
ID=62A
nS
RG=4.5Ω
VGS =10V See Figure 10④
Between lead,
6mm(0.25in.)
nH from package
and center of
die contact
VGS=0V
pF VDS=25V
f=1.0MHZ See Figure 5
mJ
IAS = 62A, L =138μH
®
HEXFET
E
3205
Power MOSFET
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
.
ISM
Pulsed Source Current
(Body Diode) ①
.
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-on Time
Min.
Typ.
Max.
—
—
110
Test Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
—
—
390
—
—
1.3
V
TJ=25ْC,IS=62A,VGS=0V ④
—
69
104
nS
—
143
215
μC
TJ=25ْC,IF=52A
di/dt=100A/μs ④
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
1.Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
2.Starting TJ = 25°C, L = 138μH
RG = 25Ω, IAS = 62A. (See Figure 12)
3. ISD ≤ 62A, di/dt ≤ 207A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Units
4.Pulse width δ 400μs; duty cycle δ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise
specified)
5.Calculated continuous current based on maximum
allowable
junction temperature. Package limitation current is 75A.
6.This is a typical value at device destruction and
represents
operation outside rated limits.
7.This is a calculated value limited to TJ = 175°C.
3