PD -94307 IRG4CF50WB IRG4CF50WB IGBT Die in Wafer Form C 900 V Size 5 Warp Speed 6" Wafer G E Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.11V Max. Collector-to-Emitter Breakdown Voltage 900V Min. Gate Threshold Voltage 3.0V Min., 6.0V Max. Zero Gate Voltage Collector Current 250 µA Max. Gate-to-Emitter Leakage Current ± 1.1 µA Max. Test Conditions IC = 10A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA T J = 25°C, VCE = 900V TJ = 25°C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Cr-Ni-Ag ( 1kA-2kA-.2.5kA ) 99% Al, 1% Si (4 microns) 0.257" x 0.260" 150mm, with std. < 100 > flat .015" + / -.003" 01-5270 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination Recommended Die Attach Conditions For optimum electrical results, die attach temperature should not exceed 300C Reference Standard IR packaged part (for design) : IRG4PF50W (When available) Die Outline 8/29/01