Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1029 IRGPH40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) VCES = 1200V VCE(sat) ≤ 3.4V G @VGE = 15V, I C = 18A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 1200 31 18 62 62 10 ±20 15 160 65 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-469 To Order Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 0.77 — 40 — Units °C/W g (oz) Revision 1 Previous Datasheet Index Next Data Sheet IRGPH40M Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 1200 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 1.1 — V/°C VGE = 0V, I C = 1.0mA — 2.3 3.4 IC = 18A — 3.0 — V IC = 31A V GE = 15V — 2.8 — IC = 18A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -14 — mV/°C VCE = VGE, IC = 250µA 4.0 10 — S VCE = 100V, I C = 18A — — 250 µA VGE = 0V, V CE = 1200V — — 3500 VGE = 0V, V CE = 1200V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions — 50 75 IC = 18A — 11 21 nC VCC = 400V — 15 30 VGE = 15V — 30 — TJ = 25°C — 21 — ns IC = 18A, V CC = 960V — 400 890 VGE = 15V, R G = 10Ω — 390 740 Energy losses include "tail" — 1.1 — — 6.3 — mJ — 7.4 14 10 — — µs VCC = 720V, T J = 125°C VGE = 15V, R G = 10Ω, VCPK < 1000V — 28 — TJ = 150°C, — 24 — ns IC = 18A, V CC = 960V — 600 — VGE = 15V, R G = 10Ω — 870 — Energy losses include "tail" — 15 — mJ — 13 — nH Measured 5mm from package — 1360 — VGE = 0V — 100 — pF VCC = 30V — 15 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC C-470 To Order