IRF IRGBC20K-S

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PD - 9.1130
IRGBC20K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
Short Circuit Rated
UltraFast Fast IGBT
C
• Short circuit rated - 10µs @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
VCES = 600V
VCE(sat) ≤ 3.5V
G
@VGE = 15V, I C = 6.0A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
SMD-220
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
10
6.0
20
20
10
±20
5.0
60
24
-55 to +150
V
A
µs
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
—
—
—
—
—
—
—
2 (0.07)
2.1
40
80
—
Units
°C/W
g (oz)
** When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
C-855
To Order
Revision 1
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IRGBC20K-S
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
Switching Characteristics @ T
J
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, I C = 250µA
20
—
—
V
VGE = 0V, IC = 1.0A
— 0.37 —
V/°C VGE = 0V, I C = 1.0mA
—
2.4
3.5
IC = 6.0A
V GE = 15V
—
3.6
—
V
IC = 10A
See Fig. 2, 5
—
2.9
—
IC = 6.0A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-11
— mV/°C VCE = VGE, IC = 250µA
1.9 3.3
—
S
VCE = 100V, I C = 6.0A
—
—
250
µA
VGE = 0V, V CE = 600V
—
— 1000
VGE = 0V, V CE = 600V, T J = 150°C
—
— ±100 nA
VGE = ±20V
= 25°C (unless otherwise specified)
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ. Max. Units
17
26
4.3 6.8
nC
6.4
11
29
—
18
—
ns
58
90
120 195
0.11 —
0.13 —
mJ
0.24 0.31
—
—
µs
28
22
200
145
0.50
7.5
360
45
4.7
—
—
—
—
—
—
—
—
—
ns
mJ
nH
pF
Conditions
IC = 6.0A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 6.0A, V CC = 480V
VGE = 15V, R G = 50Ω
Energy losses include "tail"
See Fig. 9, 10, 11, 14
VCC = 360V, T J = 125°C
VGE = 15V, R G = 50Ω, VCPK < 500V
TJ = 150°C,
IC = 6.0A, V CC = 480V
VGE = 15V, R G = 50Ω
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 50Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-856
To Order
Pulse width 5.0µs,
single shot.
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IRGBC20K-S
15
F o r b o th :
12
Load Current (A)
T ria n g u la r w a v e :
D u ty c yc le : 5 0 %
TJ = 1 2 5 ° C
T s ink = 9 0 ° C
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n = 1 4 W
C la m p v o lta g e :
8 0 % o f ra te d
9
S q u a re w a v e :
6 0% o f ra te d
v o lta g e
6
3
Ide al d iod es
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
I C , C ollec tor-to -E m itter C u rre nt (A )
I C , C ollector-to-E mitte r C urren t (A )
100
TJ = 2 5 °C
10
TJ = 1 50 °C
1
10
TJ = 25 °C
V G E = 15V
2 0µ s P U LS E W ID TH
0.1
0.1
1
T J = 15 0°C
V C C = 1 00 V
5 µs P UL S E W ID TH
1
10
5
10
15
V G E , G ate-to-E m itter V olta g e (V )
V C E , C o llector-to-Em itter V oltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-857
To Order
20
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IRGBC20K-S
5.0
V G E = 1 5V
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
M aximu m D C C olle ctor Cu rrent (A )
10
8
6
4
2
V G E = 1 5V
8 0µ s P U LS E W ID TH
I C = 1 2A
4.0
3.0
IC = 6.0A
2.0
I C = 3.0 A
1.0
0
25
50
75
100
125
-60
150
T C , C ase Tem perature (°C )
-40
-20
0
20
40
60
80
100 120 140 160
T C , C as e Te m p e ra ture (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T herm al Response (Z thJ C )
10
1
D = 0.50
0 .2 0
0 .10
PD M
0.0 5
0.1
0.0 2
0 .01
t
SIN G LE P U LS E
(TH ER M AL R E SP O N SE )
t2
N o te s :
1 . D u ty fa c to r D = t
0.01
0.00001
1
1
/ t
2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-858
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10
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IRGBC20K-S
700
500
VG E , G ate -to-E mitter V oltage (V )
600
C, C apacitance (pF)
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , C ce SHORTED
C res = C gc
C oes = C ce + C gc
V C E = 4 80 V
I C = 6.0 A
16
Cies
12
400
Coes
300
200
Cres
100
0
8
4
0
1
10
1 00
0
4
V C E , C o llector-to-Em itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VCC
VGE
TC
IC
0.25
12
16
10
= 480V
= 15V
= 25°C
= 6.0A
0.24
0.23
0.22
0.21
0.20
RG = 50Ω
V GE = 15V
V CC = 480V
I C = 12A
1
I C = 6.0A
I C = 3.0A
0.1
A
0.01
0
10
20
30
40
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
0.26
8
Q g , Total G ate C harge (nC )
50
60
R G , Gate Resistance (Ω)
-60
-20
0
20
40
60
80
100 120 140 160
TC, Case Temperature (°C)
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
-40
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-859
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IRGBC20K-S
1.4
1.0
0.8
0.6
0.4
0.2
VGGE E= 2 0V
T J = 12 5°C
10
S A FE O P E RA TIN G A RE A
1
C
Total Switching Losses (mJ)
1.2
100
= 50Ω
= 150°C
= 480V
= 15V
I , C o lle c to r-to -E m itte r C u rre n t (A )
RG
TC
V CC
V GE
A
0.0
0
2
4
6
8
10
12
0.1
1
14
10
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 2 - SMD-220
100
V C E , C o lle cto r-to-E m itte r V olta g e (V )
I C , Collector-to-Emitter Current (A)
Section D - page D-12
C-860
To Order
1000