Data Sheet No. PD 96953A IRIS-W6756 INTEGRATED SWITCHER Features • 6-pin SIP type full molded package, optimum IC for low-height SMPS, distance between high and low voltage pins is 1.8 mm with pin elimination. Package Outline • Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. • Low start-up circuit current (100uA max) •Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. • Built-in constant voltage drive circuit • Built-in step drive circuit • Built-in low frequency PWM mode (≒22 kHz) • UVLO Burst Standby TO-220 Fullpack (7 Lead modified) • Two operational modes by auto switching functions according to load For middle~heavy load operation : QR mode Key Specifications For light~middle load operation : 1 Bottom Skip mode MOSFET RDS(ON) Pout(W) • Various kinds of protection functions T ype VDSS(V) MAX AC input(V) Note 1 Pulse-by-Pulse Overcurrent Protection (OCP) Overvoltage Protection with Latch mode (OVP) Overload Protection with Latch mode (OLP) The maximum limit of on-time IRIS-W6756 650 0.73Ω 230 ±15% 240 85 to 264 140 Description IRIS-W6756 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design. Typical Connection Diagram IRIS-W6756 O CP / BD FB SS / O LP Vcc S/ G ND D Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant operation, and the peak power output is obtained by approximating 120 to 140 % of the above listed value. When the output voltage is low, and the ON-duty is narrow, the Pout (W) shall become lower than that of the above. www.irf.com IRIS-W6756 Absolute Maximum Ratings (Ta=25ºC) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Terminal s 1-3 Max. Ratings 15 Units A Note Single Pulse Maximum switching current *2 1-3 15 A Ta=-20~+125℃ Single pulse avalanche energy *3 1-3 400 mJ VDD=99V,L=20mH Input voltage for control part SS/OLP pin voltage 4-3 5-3 35 -0.5 ~ 6.0 V V IFB FB pin inflow current 6- 3 10 mA VFB FB pin voltage 6- 3 -0.5 ~ 9.0 V O.C.P/F.B pin voltage 7- 3 Power dissipation of MOSFET *4 1-3 -1.5 ~ 5.0 29 1.3 V Symbol Definition IDpeak Drain Current * 1 IDMAX Single Pulse EAS ILpeak =6.05A Vcc VSSOLP VOCPBD P D1 PD2 TF Top Tstg Tch Power dissipation for control part (MIC) Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature W 4-3 0.8 W - -20 ~ +115 ℃ - -20 ~ +115 -40 ~ +125 150 ℃ ℃ ℃ within the limits of IFB With infinite heatsink Without heatsink Specified by Vcc x Icc Refer to recommended operating temperature *1 Refer to MOS FET A.S.O. curve *2 Maximum switching current The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of the MOS FET. *3 Refer to MOS FET Tch-EAS curve *4 Refer to MOS FET Ta-PD1 curve www.irf.com IRIS-W6756 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified) Symbol Definition Terminal s Ratings MIN TYP MAX Units Note Power Supply Start-up Operation VCC(ON) Operation Start Voltage 4-3 16.3 18.2 19.9 V Vcc=0→19.9V VCC(OFF) Operation Stop Voltage 4-3 8.8 9.7 10.6 V Vcc=19.9→8.8 V ICC(ON) Circuit Current in Operation 4-3 - - 6 mA - ICC(OFF) Circuit Current in Non-Operation 4-3 - - 100 µA Vcc=15V Oscillation Frequency 1-3 19 22 25 kHz - VSSOLP(SS) Soft Start Operation Stop Voltage 5-3 1.1 1.2 1.4 V - ISSOLP(SS) Soft Start Operation Charging Current 5-3 -710 -550 -390 µA - fosc Normal Operation VOCPBD(BS1) Bottom-Skip Operation Threshold Voltage1 7-3 -0.72 -0.665 -0.605 V - VOCPBD(BS2) Bottom-Skip Operation Threshold Voltage2 7-3 -0.485 -0.435 -0.385 V - VOCPBD(LIM) Overcurrent Detection Threshold Voltage 7-3 -0.995 -0.94 -0.895 V - OCP/BD Pin Outflow Current 7-3 -250 -100 -40 µA - VOCPBD(TH1) Quasi-Resonant Operation Threshold Voltage 1 7-3 0.28 0.4 0.52 V - VOCPBD(TH2) Quasi-Resonant Operation Threshold Voltage 2 7-3 0.67 0.8 0.93 V - FB Pin Threshold Voltage 6-3 1.32 1.45 1.58 V - FB Pin Inflow Current (Normal Operation) 6-3 600 1000 1400 µA - IOCPBD VFB(OFF) IFB(ON) www.irf.com IRIS-W6756 Electrical Characteristics (for Control IC), Cont’d. Stand-by Operation VCC(S) Stand-by Operation Start Voltage 4-3 10.3 11.1 12.1 V Vcc=0→12.2V VCC(SK) Stand-by Operation Start Voltage Interval 4-3 1.1 1.35 1.65 V - ICC(S) Stand-by Non-Operation Circuit Current 4-3 - 20 56 µA Vcc=10.2V IFB(S) FB Pin Inflow Current (Stand-by) 6-3 - 4 14 µA Vcc=10.2V VFB(S) Stand-by Operation FB Pin Threshold Voltage 6-3 0.55 1.1 1.5 V Vcc=12.2V Minimum ON Time 1-3 0.65 1.0 1.35 µSec - Maximum ON Time 1-3 27.5 32.5 39 µSec - VSSOLP(OLP) OLP Operation Threshold Voltage 5-3 4 4.9 5.8 V - ISSOLP(OLP) OLP Operation Charging Current 5-3 -16 -11 -6 µA - OVP Operation Voltage 4-3 25.5 27.7 29.9 V Vcc=0→29.9V 4-3 -- 45 140 µA 4-3 6 7.2 8.5 V TON(MIN) Protection Operation TON(MAX) VCC(OVP) ICC(H) VCC(La.OFF) Latch Circuit Holding Current *5 Latch Circuit Release Voltage *5 Vcc=29.9→ VCC(OFF)-0.3V Vcc=29.9→6V *5 The latch circuit means a circuit operated O.V.P and O.L.P. *6 The current ratings are based on those of the IC , and plus(+) represents sink and minas(-) represents source. www.irf.com IRIS-W6756 Electrical characteristics for MOSFET (Ta=25 deg C) Ratings Symbol Definition Terminals VDSS Drain-to-Source breakdown voltage IDSS Note TYP MAX 1-3 650 - - V ID=300µA Drain leakage current 1-3 - - 300 µA VDS=650V RDS(ON) On-resistance 1-3 - - 0.73 Ω ID=2.2A tf Switching time 1-3 - - 400 nSec - θch-F Thermal resistance - - - 1.5 ℃/W Between channel and internal frame IRIS-W6756 MOS FET A.S.O. curve IRIS-W6756 A.S.O. temperature derating coefficient curve Ta=25ºC Single Pulse 100 100 80 Drain Current ID[A] A.S.O. temperature derating coefficient[%] Units MIN 60 40 10 0.1ms Drain current limit by ON resistance 1ms 1 ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 20 0.1 0 0 20 40 60 80 100 Internal frame temperature TF℃] [ 120 10 100 1000 Drain-to-Source Voltage VDS[V] www.irf.com IRIS-W6756 IR IS-W 6 756 Avalanche energy derating curve IRIS-W6756 MOSFET Ta-PD1 Curve 35 1 00 25 20 15 10 Without heatsink 5 80 60 40 20 PD1=1.3[W] 0 0 0 20 40 60 80 100 120 140 160 25 50 75 100 12 5 150 C hannel tem p erature T ch [℃ ] Ambient temperature Ta[℃] IRIS-W6756 Transient thermal resistance curve Transient thermal resistance θch-c [℃/W] Power dissipation PD1[W] With infinite heatsink EAS temperature derating coefficient [%] PD1=29[W] 30 10 1 0.1 0.01 0.001 1µ 10µ 100µ 1m 10m 100m Time ｔ [sec] www.irf.com IRIS-W6756 Block Diagram ４ VCC ＋ Reg& Iconst － Start Stop Burst OVP R １ Delay Q Burst Control D DRIVE Reg Protection latch S S/GND FB R Q S Q S R OSC MaxON ＋ － OLP BSD FB ６ － ＋ OCP － ＋ BD Bottom Selector Soft Start ＋ － ３ Counter ＋ － OCP/BD SS/OLP ７ ５ Pin Designation Pin Assignments IRIS D S/GND Vcc SS/OLP FB OCP/BD 1 3 4 5 6 7 Pin No. Symbols Descriptions Functions 1 D Drain pin MOSFET drain 3 S/GND Source /Ground pin MOSFET Source / Ground 4 VCC Power supply pin Input of power supply for control circuit 5 SS/OLP Delay at Overload /Soft Start set up Pin Overload Protection and Soft Start Operation Time set up 6 FB Feedback pin Constant Voltage Control Signal Input, Burst(intermittent) mode Oscillation Control 7 OCP/BD Overcurrent Protection Input / Bottom Detection Pin Overcurrent Detection Signal Input /Bottom Detection Signal Input www.irf.com IRIS-W6756 Case Outline 10.0±0.2 0.5 4.2±0.2 φ3.2 IRIS ±0.1 16.9±0.3 7.9±0.2 2.8±0.2 4 ±0.2 gate burr a b 5 ±0.5 6-0.74±0.15 +0.2 (5.4) R-end 1) -R (2 6-0.65-0.1 10.4±0.5 2.8 2.6±0.1 +0.2 0.45-0.1 6xP1.27±0.15=7.62±0.15 5.08±0.6 0.5 1 2 0.5 0.5 0.5 a Type Number W6756 b Lot Number 1st letter The last digit of year 2nd letter Month 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter Day Arabic Numerals 5th letter : Registration Symbol Weight : Approx. 2.3g Dimensions in mm DWG.No. TG3A-2103 3 4 5 6 7 Material of Pin : Cu Treatment of Pin : Ni plating + solder dip Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com