Bulletin I27133 rev. H 10/02 IRK.105 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 105 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IRK.105 Units 105 A 235 A ITSM @ 50Hz 1785 A IFSM @ 60Hz 1870 A @ 50Hz 15.91 KA 2s @ 60Hz 14.52 KA 2s 159.1 KA 2√s I T(AV) or IF(AV) @ 85°C I O(RMS) (*) 2 I t 2 I √t V RRM range 400 to 1600 V TSTG - 40 to 150 o TJ - 40 to130 o C C (*) As AC switch. www.irf.com 1 IRK.105 Series Bulletin I27133 rev. H 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code - IRK.105 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 IRRM IDRM 130°C mA 20 On-state Conduction Parameters IT(AV) current (Thyristors) IF(AV) IRK.105 Units Conditions Max. average on-state Max. average forward 180o conduction, half sine wave, 105 TC = 85oC current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch 235 I(RMS) A ITSM Max. peak, one cycle 1785 t =10ms or non-repetitive on-state 1870 t =8.3ms reapplied IFSM or forward current 1500 t =10ms 1570 t =8.3ms reapplied I2t Max. I2t for fusing t =10ms 14.52 t =8.3ms reapplied di/dt 0.85 2.37 2.25 K A2√s V mΩ 1.64 V 150 A/µs Max. latching current (1) I2t for time tx = I2√t x √tx TJ = 25oC, t = 0.1 to 10ms, no voltage reappl. TJ =TJ max Low level (3) TJ = TJ max High level (4) Low level (3) TJ = TJ max High level (4) ITM = p x IT(AV) TJ = 25°C IFM = p x IF(AV) ITM =p x IT(AV), I = 500mA, g tr < 0.5 µs, tp > 6 µs TJ = 25oC, anode supply = 6V, 200 mA IL t =8.3ms reapplied T J = 25oC, from 0.67 VDRM, Max. non-repetitive rate Max. holding current Initial TJ = TJ max. t =8.3ms no voltage reapplied current IH 100% VRRM 18.30 Max. value of on-state of rise of turned on t =10ms t =10ms slope resistance (2) forward voltage KA2s No voltage 20.00 0.80 Max. peak on-state or TJ = 25oC, 15.91 VT(TO) Max. value of threshold VFM Initial TJ = TJ max. t =8.3ms no voltage reapplied 159.1 VTM 100% VRRM Sinusoidal half wave, t =10ms Max. I2√t for fusing (1) rt No voltage 2000 10.27 voltage (2) I(RMS) 2100 11.25 I2√t or 400 resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7% x p x IAV < I < p x IAV (4) I > p x IAV 2 www.irf.com IRK.105 Series Bulletin I27133 rev. H 10/02 Triggering Parameters PGM IRK. 105 Max. peak gate power Conditions 12 PG(AV) Max. average gate power 3 IGM 3 Max. peak gate current -VGM Max. peak negative W A 10 gate voltage VGT Units Max. gate voltage 4.0 required to trigger 2.5 TJ = - 40°C V TJ = 25°C 1.7 IGT TJ = 125°C Max. gate current 270 required to trigger 150 TJ = - 40°C mA TJ = 25°C TJ = 125°C 80 VGD resistive load Anode supply = 6V resistive load o Max. gate voltage 0.25 V TJ = 125 C, rated VDRM applied 6 mA TJ = 125oC, rated VDRM applied IRK.105 Units 20 mA that will not trigger IGD Anode supply = 6V Max. gate current that will not trigger Blocking Parameters IRRM Max. peak reverse and IDRM off-state leakage current Conditions TJ = 130oC, gate open circuit at VRRM, VDRM VINS RMS isolation voltage 2500 (1 min) 50 Hz, circuit to base, all terminals V 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) shorted 500 TJ = 130oC, linear to 0.67 VDRM, gate open circuit V/µs (5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90. Thermal and Mechanical Specifications Parameters IRK.105 TJ Junction operating temperature range - 40 to 130 Tstg Storage temp. range - 40 to 150 Units Conditions °C RthJC Max. internal thermal resistance, junction 0.135 Per module, DC operation to case K/W RthCS Typical thermal resistance T Mounting torque ± 10% A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound 5 to heatsink Nm busbar wt Mounting surface flat, smooth and greased 0.1 case to heatsink 3 Approximate weight 110 (4) Case style gr (oz) TO-240AA JEDEC ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices IRK.105 Sine half wave conduction 180o 0.04 www.irf.com 120o 0.05 90o 0.06 60o 0.08 Rect. wave conduction 30o 0.12 180o 0.03 120o 0.05 90o 0.06 60o 0.08 30o 0.12 Units °C/ W 3 IRK.105 Series Bulletin I27133 rev. H 10/02 Ordering Information Table Device Code IRK T 105 1 2 3 / 16 A S90 4 5 6 IRK.106 types With no auxiliary cathode 1 - Module type 2 - Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: * * Available with no auxiliary cathode. To specify change: 105 to 106 e.g. : IRKT106/16A etc. S90 = dv/dt 1000 V/µs No letter = dv/dt 500 Vµs Outline Table Dimensions are in millimeters and [inches] IRKT IRKH (1) ~ (1) ~ + (2) + (2) + (2) (3) (3) (3) G1 K1 (4) (5) IRKN IRKL (1) ~ K2 G2 (7) (6) G1 K1 (4) (5) (1) - (2) + + (3) K2 G2 (7) (6) G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.105 Series 120 110 Conduction Angle 100 90 30° 60° 80 90° 120° 180° 0 20 40 60 80 100 120 110 Conduction Period 100 90 30° 80 70 60° 90° 120° 0 20 40 60 180° DC 80 100 120 140 160 180 Fig. 2 - Current Ratings Characteristics 180° 120° 90° 60° 30° 120 RMS Limit 80 60 Conduction Angle 40 IRK.105.. Series Per Junction T J = 130°C 20 0 20 40 60 80 100 120 200 DC 180° 120° 90° 60° 30° 180 160 140 120 100 RMS Limit 80 Conduction Period 60 IRK.105.. Series Per Junction T J = 130°C 40 20 0 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 1600 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 130°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1500 1400 1300 1200 1100 1000 900 IRK.105.. Series Per Junction 800 700 thJC 120 Fig. 1 - Current Ratings Characteristics 140 0 IRK.105.. Series R (DC) = 0.27 K/W Average On-state Current (A) 160 100 130 Average On-state Current (A) Maximum Average On-state Power Loss (W) 70 Maximum Average On-state Power Loss (W) Peak Half Sine Wave On-state Current (A) IRK.105.. Series R thJC (DC) = 0.27 K/W 1 10 100 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) 130 Maximum Allowable Case Temperature (°C) Bulletin I27133 rev. H 10/02 1800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 130°C No Voltage Reapplied Rated V RRMReapplied 1600 1400 1200 1000 800 IRK.105.. Series Per Junction 600 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 5 IRK.105 Series Bulletin I27133 rev. H 10/02 ta R 120 el 80 -D IRK.105.. Series Per Module T J = 130°C 50 W K/ W 1K 100 40 K/ 0. 7 K Conduction Angle 0 W 0.5 150 0 3 K/ 200 0. W K/ 250 1 0. 180° 120° 90° 60° 30° = SA R th 300 2 0. Maximum Total On-state Power Loss (W) 350 160 200 /W /W 2 K /W 240 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total RMS Output Current (A) Fig. 7 - On-state Power Loss Characteristics A hS R t 180° (Sine) 180° (Rect) 1 W K/ 0. 2K /W -D ta el 400 0. 500 = R Maximum Total Power Loss (W) 600 0. 300 200 2 x IRK.105.. Series Single Phase Bridge Connected T J = 130°C 100 0 0 40 80 120 160 3K 0. 5 K/W 0.7 K/ W 1 K/W 2 K/W 200 0 Total Output Current (A) /W 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-state Power Loss Characteristics 800 R 700 SA th Maximum Total Power Loss (W) 900 600 120° (Rect) 500 0. 2 400 0.3 300 3 x IRK.105.. Series Three Phase Bridge Connected T J = 130°C 200 100 0 0 40 80 120 160 200 Total Output Current (A) 240 0 .5 = 0. 1 K/ W -D K/ W el ta R K/W K/ W 1 K/ W 0 280 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.105 Series Bulletin I27133 rev. H 10/02 Instantaneous On-state Current (A) 1000 100 T J= 25°C T J= 130°C 10 IRK.105.. Series Per Junction 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) I IRK.105.. Series T J= 125 °C 600 TM Maximum Reverse Recovery Current - Irr (A) 700 = 200 A 100 A 500 50 A 400 20 A 300 10 A 200 100 10 20 30 40 50 60 70 80 90 100 140 I TM = 200 A IRK.105.. Series T = 125 °C 120 J 100 A 100 50 A 80 20 A 10 A 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 11 - Recovery Charge Characteristics Fig. 12 - Recovery Current Characteristics Transient Thermal Impedance Z thJC (K/W) Maximum Reverse Recovery Charge - Qrr (µC) Fig. 10 - On-state Voltage Drop Characteristics 1 Steady State Value: R thJC = 0.27 K/W (DC Operation) 0.1 IRK.105.. Series Per Junction 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 13 - Thermal Impedance ZthJC Characteristics www.irf.com 7 IRK.105 Series Bulletin I27133 rev. H 10/02 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 15 V, 40 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = 125 °C 1 TJ = -40 °C (b) TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 IRK.105.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 14- Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 8 www.irf.com