Bulletin I27102 rev. A 10/97 IRK. SERIES SCR / SCR and SCR / DIODE MAGN-A-pakä Power Modules Features 170A 230A 250A High voltage Electrically isolated base plate 3000 V RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved Description This new IRK serie of MAGN-A-paks modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, U.P.S., etc.). Major Ratings and Characteristics Parameters IRK.170.. IRK.230.. IT(AV) @ 85°C 170 230 250 A IT(RMS) 377 510 555 A @ 50Hz 5100 7500 8500 A @ 60Hz 5350 7850 8900 A @ 50Hz 131 280 361 KA 2s @ 60Hz 119 256 330 KA 2s 1310 2800 3610 KA2√s ITSM 2 I t I2√t VDRM / VRRM TJ range www.irf.com IRK.250.. Units Up to1600 Up to 2000 Up to1600 -40 to 130 V o C 1 IRK.170, .230, .250 Series Bulletin I27102 rev. A 10/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code VRRMVDRM , maximum repetitive peak reverse and off-state blocking voltage V VRSM , maximum non-repetitive peak reverse voltage I RRM I DRM max @ 130°C V mA 04 08 12 14 16 400 800 1200 1400 1600 500 900 1300 1500 1700 50 08 12 16 18 20 800 1200 1600 1800 2000 900 1300 1700 1900 2100 50 IRK.170IRK.250- IRK.230- On-state Conduction Parameters IT(AV) Maximum average on-state current @ Case temperature IRK.170 IRK.230 IRK.250 Units Conditions 170 230 250 85 85 85 A o 180 o conduction, half sine wave C IT(RMS) Maximum RMS on -state current 377 510 555 A as AC switch ITSM 5100 5350 7500 7850 8500 8900 A t = 10ms No voltage t = 8.3ms reapplied 4300 6300 7150 t = 10ms 4500 6600 7500 t = 8.3ms reapplied 131 280 361 119 92.5 256 198 330 255 I2t I2√t Maximum peak, one-cycle on-state, non-repetitive surge current Maximum I2 t for fusing Maximum I2√t for fusing VT(TO)1Low level value of threshold voltage 84.4 181 233 1310 2800 3610 0.89 1.03 0.97 VT(TO)2High level value of threshold voltage 1.12 1.07 1.00 rt1 Low level on-state slope resistance 1.34 0.77 0.60 rt2 High level on-state slope resistance 0.96 0.73 0.57 V TM Maximum on-state voltage drop 1.60 1.59 1.44 KA2s t = 10ms 100% V RRM Sinusoidal half wave, No voltage initial TJ = TJ max t = 8.3ms reapplied t = 10ms 100% V RRM t = 8.3ms reapplied KA2√s t = 0.1 to 10ms, no voltage reapplied V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. V ITM = π x I T(AV), TJ = TJ max., 180o conduction Av. power = V T(TO) x IT(AV) + rf x (IT(RMS)) 2 IH Maximum holding current 500 500 500 mA Anode supply=12V, initial IT=30A, TJ =25o C IL Maximum latching current 1000 1000 1000 Anode supply=12V, resistive load=1Ω gate pulse: 10V, 100µs, TJ = 25°C Switching Parameters IRK.170 IRK.230 IRK.250 Units Conditions td Typical delay time 1.0 tr Typical rise time 2.0 tq Typical turn-off time 2 50 - 150 µs TJ = 25o C, Gate Current=1A dIg/dt=1A/µs Vd = 0,67% VDRM µs ITM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ; Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm www.irf.com IRK.170, .230, .250 Series Bulletin I27102 rev. A 10/97 Blocking Parameters IRK.170 IRK.230 IRK.250 Units Conditions IRRM Max. peak reverse and off-state 50 mA TJ =TJ max. IDRM leakage current V INS RMS isolation voltage 3500 dv/dt Critical rate of rise of off-state voltage 1000 V 50Hz, circuit to base, all termin. shorted, 25°C,1s V/µs TJ = TJ max, exponential to 67% rated VDRM Triggering Parameters IRK.170 IRK.230 IRK.250 Units Conditions 10.0 W tp ≤ 5ms, TJ = TJ max. PG(AV) Maximum average gate power 2.0 W f = 50Hz, TJ = TJ max. +IGM Maximum peak gate current 3.0 A tp ≤ 5ms, TJ = TJ max. -VGT Max. peak negative gate voltage 5.0 V tp ≤ 5ms, TJ = TJ max. o I PGM VGT IGT Maximum peak gate power Maximum required DC gate 4.0 V TJ = - 40 C Anode supply = 12V, resistive voltage to trigger 3.0 V TJ = 25oC load ; Ra = 1Ω 2.0 V TJ = TJ max. Maximum required DC gate 350 mA TJ = - 40oC Anode supply = 12V, resistive current to trigger 200 mA TJ = 25oC load ; Ra = 1Ω 100 mA TJ = TJ max. 0.25 V VGD Maximum gate voltage that will not trigger IGD Maximum gate current that will not trigger Max rate of rise of turned-on current di/dt 10.0 @ TJ= T J max., rated VDRM applied mA @ TJ= TJ max., rated VDRM applied A/µs @ TJ= TJ max., ITM = 400 A rated VDRM applied 500 Thermal and Mechanical Specifications Parameters TJ IRK.170 IRK.230 IRK.250 Units Conditions Junction operating temperature Tstg Storage temperature range RthJC Maximum thermal resistance junction to case RthC-S Thermal resistance, case to heatsink T -40 to 130 o -40 to 150 o C C 0.17 0.125 0.125 K/W Per junction, DC operation 0.02 0.02 0.02 K/W Mounting surface flat, smooth and greased (per module) A mounting compound is recommended and the Mounting tourque ±10% MAP to heatsink 4 to 6 Nm tourque should be rechecked after a period of Busbar to MAP 4 to 6 Nm about 3 hours to allow for the spread of the compound wt Approximate weight Case style www.irf.com 500 g 17.8 oz MAGN-A-pak 3 IRK.170, .230, .250 Series Bulletin I27102 rev. A 10/97 ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sinusoidal conduction @ TJ max. Devices Rectangular conduction @ TJ max. 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o IRK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 IRK.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 IRK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033 Units K/W MAGN-A-paks Suitable for Current Source Inverters Thyristor VDRM Diode VRRM VRSM @ 85°C @ 85°C @ 85°C 1500 2000 IRKH170-14D20 IRKH230-14D20 IRKH250-14D20 VRRM 1400 IT(AV) / IF(AV) @ TC VRSM 170A 230A 250A 1400 1500 2000 IRKL170-14D20 IRKL230-14D20 IRKL250-14D20 1600 1700 2500 IRKH170-16D25 IRKH230-16D25 IRKH250-16D25 1600 1700 2500 IRKL170-16D25 IRKL230-16D25 IRKL250-16D25 1800 1900 2800 Not Available IRKH230-18D28 Not Available 1800 1900 2800 Not Available IRKL230-18D28 Not Available 2000 2100 3200 Not Available IRKH230-20D32 Not Available 2000 2100 3200 Not Available IRKL230-20D32 Not Available For all other parameters and characteristics refer to standard IRKH... and IRKL... modules. Application Notes Current Source Inverters Current-Source Inverters (also known as Sequentially Commutated Inverters) use Phase Control (as opposed to Fast) Thyristors and Diodes. 3xIRKL... M 3xIRKH... 3xIRKT... The advantages of Current Source Inverters lie in their ease control, absence of large commutation inductances and limited fault currents. Their simple construction, illustrated by the circuit on the left, is further enhanced by the use of MAGN-A-paks which allow the power circuit of an Inverter to be realised with 6 capacitors and 9 MAGN-A-paks all mounted on just one heatsink. The optimal design of Current Source Inverters requires the use of Diodes with blocking voltages greater than those of the thyristors . This departure from conventional half-bridge modules is catered for by MAGN-A-pak range with Thyristors up to 2000V and Diodes up to 3200V. Current Source Inverter using 9 MAGN-A-paks 4 www.irf.com IRK.170, .230, .250 Series Bulletin I27102 rev. A 10/97 Ordering Information Table Device Code 1 2 3 4 5 6 7 - IRK T 250 1 2 3 - 14 D20 4 5 N 6 Module type Circuit configuration (See Outline Table) Current rating Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) Current Source Inverters Types None = Standard devices N = aluminum nitrade substrate Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 IRKT... IRKH... IRKL... IRKU... IRKV... IRKK... IRKN... NOTE: To order the Optional Hardware see Bulletin I27900 www.irf.com 5 IRK.170, .230, .250 Series 130 IRK.170.. Series R thJC (DC) = 0.17 K/W 120 110 Conduction Angle 100 90 30° 80 60° 90° 120° 70 180° 60 0 40 80 120 160 200 Maximum Allo wable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Bulletin I27102 rev. A 10/97 130 IRK.170.. Series R thJC (DC) = 0.17 K/W 120 110 Conduction Period 100 90 30° 60° 90° 120° 80 70 180° 0 50 Average On-state Current (A) 100 Conduction Angle IRK.170.. Series Per Junction T J= 125°C 50 0 0 40 80 120 160 200 200 250 300 350 DC 180° 120° 90° 60° 30° 300 250 200 RMS Limit 150 Conduction Period 100 IRK.170.. series Per Junction T J = 125°C 50 0 0 50 100 150 200 250 300 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 5000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 130°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4500 4000 3500 3000 2500 IRK.170.. Series Per Junction 2000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 6 Maximum Average On-state Power Loss (W) RMS Limit Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Peak Half Sine Wave On-state Current (A) 180° 120° 90° 60° 30° 150 150 Fig. 2 - Current Ratings Characteristics 300 200 100 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 250 DC 60 5000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 130°C No Voltage Reapplied Rated V RRMReapplied 4500 4000 3500 3000 2500 IRK.170.. Series Per Junction 2000 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com IRK.170, .230, .250 Series Bulletin I27102 rev. A 10/97 =0 W K/ A R t hS 8 0.0 W K/ K .04 /W 5K /W R lta De 0.3 250 K/ W K/ W K/ W 2 0 .3 0. 2 5 W K/ 300 0 .2 0.1 180° 120° 90° 60° 30° 350 16 0. Maximum Total On-state Power Loss (W) 400 200 Conduction Angle 150 100 IRK.170.. Series Per Module T J = 130°C 50 0 0 50 100 150 200 250 300 350 400 0 Total RMS Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-state Power Loss Characteristics W K/ 2K /W 6K /W 0. 2 K /W 0 .2 5 K/ W 0.3 5 K/ W 100 R 2 x IRK.170.. Series Single Phase Bridge Connected T J = 130°C 200 a el t 300 -D 0. 1 400 . 02 =0 500 SA R th 0.1 180° (Sine) 180° (Rect) 600 K/ W W /W 700 0. 08 K/ /W 0. 1 800 K 06 0. 900 4K 0.0 Maximum Total Power Loss (W) 1000 0 0 50 100 150 200 250 300 0 350 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 8 - On-state Power Loss Characteristics 8K /W 0. 1 2 K /W 0.1 6 600 3 x IRK.170.. Series Three Phase Bridge Connected T J = 130°C 400 200 0 .25 K/ W R 800 a elt -D 0. 1 W K/ 120° (Rect) K/ W .0 1 0.0 1000 =0 hSA R t 1200 W K/ 0. 05 1400 03 0. Maximum Total Power Loss (W) 1600 K/ W K/W 0 0 100 200 300 400 Total Output Current (A) 500 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-state Power Loss Characteristics www.irf.com 7 IRK.170, .230, .250 Series IRK.230.. Series R thJC (DC) = 0.125 K/W 120 110 Conduction Angle 100 90 30° 60° 80 90° 120° 70 180° 60 40 80 120 160 200 240 200 150 Conduction Angle 100 IRK.230.. Series Per Junction T J = 130°C 50 0 90 30° 60° 80 90° 120° 180° 70 DC 60 0 50 100 150 200 250 300 350 400 50 100 150 200 250 500 DC 180° 120° 90° 60° 30° 450 400 350 300 250 RMS Limit 200 Conduction Per iod 150 IRK.230.. Series Per Junction T J = 130°C 100 50 0 0 50 100 150 200 250 300 350 400 Average On-state Current (A) Average On-state Current (A) Fig. 12 - On-state Power Loss Characteristics Fig. 13 - On-state Power Loss Characteristics 7000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 130°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 IRK.230.. Series Per Junction 3500 3000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current 8 Conduction Period 100 Average On-state Current (A) RMS Limit 0 110 Fig. 11 - Current Ratings Characteristics 180° 120° 90° 60° 30° 250 IRK.230.. Series R thJC (DC) = 0.125 K/W 120 Average On-state Current (A) 350 300 130 Fig. 10 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 0 Maximum Allowable Case Temperature (°C) 130 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Max imum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Bulletin I27102 rev. A 10/97 7500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 130°C No Voltage Reapplied Rated V RRMReapplied 7000 6500 6000 5500 5000 4500 4000 3500 IRK.230.. Series Per Junction 3000 0.01 0.1 1 Pulse Train Duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current www.irf.com IRK.170, .230, .250 Series Bulletin I27102 rev. A 10/97 A R thS /W 3K W . 01 =0 K/ W K/ K /W W -D 400 K/ W 0.0 0. 1 6 0.2 K/ W K/ Conduction angle 0. 12 06 0. 500 0. 1 180° 120° 90° 60° 30° W K/ 600 08 0. 0.2 5K /W 0. 3 K /W R 300 a el t Maximum Total On-state Power Loss (W) 700 200 IRK.230.. Series Per Module T J = 130°C 100 0 0 100 200 300 400 500 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Total RMS Output Current (A) Fig. 16 - On-state Power Loss Characteristics SA R th K .01 K/ W =0 K/W 1050 0 .1 3 0. 0 1200 W K/ 180° (Sine) 180° (Rect) 1350 /W 5K 0 .0 08 0. 0. 1 6K /W 750 450 2 x IRK.230.. Series Single Phase Bridge Connected T J = 130°C 300 150 R 0. 2 K 600 lta De 900 /W Maximum Total Power Loss (W) 1500 /W 1 .5 K /W 0 0 0 50 100 150 200 250 300 350 400 450 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 17 - On-state Power Loss Characteristics 3 x IRK.230.. Series Three Phase Bridge Connected T J = 130°C 400 200 0 .2 5K/ aR elt 600 -D 800 /W 5K 120° (Rect) 1000 . 00 =0 1200 A 1400 S R th 0. 04 K/ 0. W 05 K/ W 0.0 6K /W 0. 0 8K /W 0. 1 K /W 0.1 2 K/W 0 .16 K/ W /W 1K 0. 0 1600 /W 2K 0. 0 1800 W K/ 03 0. Maximum Total Power Loss (W) 2000 W 0 0 100 200 300 400 500 Total Output Current (A) 0 600 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 18 - On-state Power Loss Characteristics www.irf.com 9 IRK.170, .230, .250 Series IRK.250.. Series R thJC (DC) = 0.125 K/W 120 110 Conduction Angle 100 90 30° 60° 80 90° 120° 70 180° 60 50 100 150 200 250 300 200 150 Conduction Angle 100 IRK.250.. Series Per Junction T J = 130°C 50 0 90 30° 60° 90° 80 120° 180° 70 DC 60 0 100 200 300 400 500 50 100 150 200 250 500 DC 180° 120° 90° 60° 30° 450 400 350 300 250 RMS Limit 200 150 Conduction Period 100 IRK.250.. Series Per Junction T J = 130°C 50 0 0 50 100 150 200 250 300 350 400 Average On-state Current (A) Average On-state Current (A) Fig. 21 - On-state Power Loss Characteristics Fig. 22 - On-state Power Loss Characteristics 7500 7000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 130°C 6500 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6000 5500 5000 4500 IRK.250.. Series Per Junction 4000 3500 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 23 - Maximum Non-Repetitive Surge Current 10 Conduction Period 100 Average On-state Current (A) R MS Limit 0 110 Fig. 20 - Current Ratings Chartacteristics 180° 120° 90° 60° 30° 250 IRK.250.. Series R thJC (DC) = 0.125 K/W 120 Average On-state Current (A) 350 300 130 Fig. 19 - Current Ratings Chartacteristics Maximum Average On-state Power Loss (W) 0 Maximum Allowable Case Temperature (°C) 130 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Bulletin I27102 rev. A 10/97 9000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 130°C No Voltage Reapplied Rated VRRMReapplied 8000 7000 6000 5000 4000 IRK.250.. Series Per Junction 3000 0.01 0.1 1 Pulse Train Duration (s) Fig. 24 - Maximum Non-Repetitive Surge Current www.irf.com IRK.170, .230, .250 Series Bulletin I27102 rev. A 10/97 S R th A =0 W K/ .02 K/W 0.2 300 0 .3 R 0K /W 0.2 5K /W a elt 400 -D Conduction angle K/ W 0. 1 6K /W W K/ 500 5 0.0 0. 12 180° 120° 90° 60° 30° 600 08 0. Maximum Total On-state Power Loss (W) 700 K/W 200 IRK.250.. Series Per Module T J = 130°C 100 0 0 100 200 300 400 500 Total RMS Output Current (A) 0 600 20 40 60 80 100 120 Maximum Allowable Am bient Temperature (°C) Fig. 25 - On-state Power Loss Characteristics 1400 A =0 W .01 K/W -D aR elt Maximum Total Power Loss (W) hS Rt K/ W K/ K/ W K/W 0.1 2K /W 0.16 K/W 2 x IRK.250.. Series Single Phase Bridge Connected T J = 130°C 200 K/ W 0 .1 600 400 2 800 0.0 0.0 6 180° (Sine) 180° (Rect) K/ W 3 1000 0. 04 0 .0 0.0 5 1200 0.3 K/ W 0 0 100 200 300 400 500 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperat ure (°C) Total Output Current (A) Fig. 26 - On-state Power Loss Characteristics 2000 Maximum Total Power Loss (W) 200 K/ W 2K /W 0 .1 6K /W 0 .2 0 K/ W 0.2 5 R 3 x IRK.250.. Series Three Phase Bridge Connected T J = 130°C 400 a elt -D 800 K /W 1000 .0 1 0. 1 0. 1 600 W 8K /W =0 120° (Rect) 1200 K/ A R thS 0.0 W K/ 1400 K/ W 03 0. 0. 06 W K/ 1600 04 0. 0. 05 1800 K/ W 0 0 100 200 300 400 500 Total Output Current (A) 600 700 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperat ure (°C) Fig.27 - On-state Power Loss Characteristics www.irf.com 11 IRK.170, .230, .250 Series Bulletin I27102 rev. A 10/97 10000 Instantaneous On-state Current (A) Instantaneous On-stat e Current (A) 10000 1000 T J = 25°C 100 T J= 125°C IRK.170.. Series Per Junction 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 1000 T J= 25°C T J= 130°C IRK.230.. Series Per Ju nction 100 0.5 5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Instantaneous On-state Voltage (V) Fig. 28 - On-state Voltage Drop Characteristics Fig. 29 - On-state Voltage Drop Characteristics Instantaneous On-state Current (A) 10000 1000 T J = 25°C T J= 130°C IRK.250.. Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) 1800 IRK.170.. Series T J = 130 °C Per Junction 1600 I TM= 800 A 1400 500 A 1200 300 A 200 A 1000 100 A 800 50 A 600 400 200 0 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 31 - Reverse Recovery Charge Characteristics 12 Typical Reverse Recovery Charge - Qrr (µC) Typical Reverse Recovery Charge - Qrr (µC) Fig. 30 - On-state Voltage Drop Characteristics 2400 IRK.230/ 250.. Series 2200 T = 130 °C J 2000 Per Junction I TM= 800 A 500 A 300 A 1800 200 A 1600 100 A 1400 1200 50 A 1000 800 600 400 200 0 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 32 - Reverse Recovery Charge Characteristics www.irf.com IRK.170, .230, .250 Series Bulletin I27102 rev. A 10/97 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 20ohms 10 tr<=1 µs (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms (a) (b) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 IRK.170/ 230/ 250 Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Transient Thermal Impedance Z thJC (K/W) Fig. 33 - Gate Characteristics 1 Steady State Value: R thJC = 0.17 K/W R thJC = 0.125 K/W 0.1 IRK.170.. Series (DC Operation) IRK.230/ 250.. Series 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 34 - Thermal Impedance ZthJC Characteristics www.irf.com 13