Bulletin I27136 rev. E 10/02 IRKU/V105 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 105 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pullout: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IRKU/V105 Units IT(AV) @ 85°C 105 A IT(RMS) 165 A ITSM @ 50Hz 1785 A @ 60Hz 1870 A @ 50Hz 15.91 KA 2s @ 60Hz 14.52 KA 2s 159.1 KA 2√s 2 I t I2√t VRRM range TSTG TJ www.irf.com 400 to 1600 V - 40 to 125 o C - 40 to130 o C 1 IRKU/V105 Series Bulletin I27136 rev. E 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Code - Type number IRKU/V105 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 04 400 500 400 08 800 900 800 12 1200 1300 1200 16 1600 1700 1600 IRRM IDRM 130°C mA 20 On-state Conduction Parameters IT(AV) IRKU/V105 Max. average on-state current IT(RMS) Max. RMS on-state current. ITSM @ TC 105 165 77 180o conduction, half sine wave, A DC 1785 t=10ms No voltage non-repetitive on-state 1870 t=8.3ms reapplied current 1500 t=10ms 100% VRRM t=8.3ms reapplied 2000 t=10ms TJ = 25oC, 2100 t=8.3ms no voltage reapplied 15.91 t=10ms No voltage Max. I2t for fusing 11.25 10.27 A 2 KA s 20.00 18.30 Max. I2√t for fusing (1) VT(TO) Max. value of threshold voltage (2) rt VTM 159.1 K A2√s 0.80 0.85 Max. value of on-state 2.37 slope resistance (2) 2.25 1.64 mΩ V 150 A/µs current Max. holding current 200 IL Max. latching current 400 t=8.3ms reapplied t=10ms TJ = 25oC, t=8.3ms no voltage reapplied t= 0.1 to 10ms, no voltage reappl., TJ =TJ max. TJ = TJ max High level (4) Low level (3) TJ = TJ max High level (4) ITM = π x IT(AV) TJ = 25°C IFM = π x IF(AV) ITM =π x IT(AV), I = 500mA, g TJ = 25oC, anode supply = 6V, mA 2 Initial TJ = TJ max. tr < 0.5 µs, t p > 6 µs IH (1) I2t for time t = I2√t x √t . x x (3) 16.7% x π x IAV < I < π x IAV reapplied 100% VRRM Initial TJ = TJ max. T J = 25oC, from 0.67 VDRM, Max. non-repetitive rate of rise of turned on t=8.3ms t=10ms Sinusoidal half wave, Low level (3) V Max. peak on-state voltage di/dt TC = 85oC °C 14.52 I2√t Conditions Max. peak, one cycle 1570 I2t Units resistive load, gate open circuit TJ = 25oC, anode supply = 6V,resistive load (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (4) I > π x IAV www.irf.com IRKU/V105 Series Bulletin I27136 rev. E 10/02 Triggering Parameters PGM IRK.U/V105 Max. peak gate power PG(AV) Max. average gate power IGM IGT VGD Max. peak gate current 3 A 10 Max. gate voltage 4.0 required to trigger 2.5 TJ = 25°C 1.7 TJ = 125°C Max. gate current required to trigger V 270 150 80 TJ = - 40°C Anode supply = 6V resistive load TJ = - 40°C TJ = 25°C TJ = 125°C mA Max. gate voltage Anode supply = 6V resistive load o 0.25 V TJ = 125 C, rated VDRM applied 6 mA TJ = 125oC, rated VDRM applied IRKU/V 105 Units 20 mA that will not trigger IGD Conditions W 3 -VGM Max. peak negative gate voltage VGT Units 12 Max. gate current that will not trigger Blocking Parameters IRRM Max. peak reverse and IDRM off-state leakage current VINS RMS isolation voltage Conditions TJ = 130oC, gate open circuit at VRRM, VDRM 2500 (1 min) 50 Hz, circuit to base, all terminals V 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) shorted 500 TJ = 130oC, linear to 0.67 VDRM, gate open circuit V/µs (5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU105/16AS90. Thermal and Mechanical Specifications Parameters IRKU/V105 TJ Junction operating temperature range - 40 to 130 Tstg Storage temperature range - 40 to 125 RthJC Max. internal thermal resistance, Units °C 0.135 Per module, DC operation junction to case K/W RthCS Typical thermal resistance wt Mounting surface flat, smooth and greased 0.1 case to heatsink T Conditions A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Mounting torque ± 10% to heatsink 5 busbar 3 Approximate weight Nm 110 (4) Case style g (oz) TO-240AA JEDEC ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sine half wave conduction Devices IRKU/V105 www.irf.com Rect. wave conduction Units 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W 3 IRKU/V105 Series Bulletin I27136 rev. E 10/02 Ordering Information Table Device Code IRK U 105 1 2 3 / 16 A S90 4 5 6 IRK.106 types With no auxiliary cathode 1 - 2 - Module type Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: * * Available with no auxiliary cathode. To specify change: 105 to 106 e.g. : IRKU106/16A etc. S90 = dv/dt 1000 V/µs No letter = dv/dt 500 Vµs Outline Table Dimensions are in millimeters and [inches] IRKU (1) + IRKV (1) - + - (2) (2) - + (3) (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 K2 G2 (4) (5) (7) (6) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRKU/V105 Series IRK.105.. Series R thJC (DC) = 0.27 K/W 120 110 Conduction Angle 100 90 30° 60° 80 90° 120° 180° 70 0 20 40 60 80 100 120 thJC 110 Conduction Period 100 90 30° 80 70 120° 0 20 RMS Limit 80 60 Conduction Angle 40 IRK.105.. Series Per Junction T J = 130°C 20 20 40 60 80 100 120 200 160 140 120 80 Conduction Period 60 IRK.105.. Series Per Junction T J = 130°C 40 20 0 0 20 1100 1000 900 700 IRK.105.. Series Per Junction 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current www.irf.com 60 80 100 120 140 160 180 Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 1200 800 40 Average On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 130°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1300 80 100 120 140 160 180 100 RMS Limit Average On-state Current (A) 1400 60 DC DC 180° 120° 90° 60° 30° 180 Fig. 3 - On-state Power Loss Characteristics 1500 40 180° Fig. 2 - Current Ratings Characteristics 120 1600 60° 90° Fig. 1 - Current Ratings Characteristics 180° 120° 90° 60° 30° 0 IRK.105.. Series R (DC) = 0.27 K/W 120 Average On-state Current (A) 140 0 130 Average On-state Current (A) 160 100 Maximum Allowable Case Temperature (°C) 130 Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Bulletin I27136 rev. E 10/02 1800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 130°C No Voltage Reapplied Rated V RRMReapplied 1600 1400 1200 1000 800 IRK.105.. Series Per Junction 600 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 5 IRKU/V105 Series Bulletin I27136 rev. E 10/02 hS R t 180° (Sine) 180° (Rect) 0. 1 2 x IRK.105.. Series Single Phase Bridge Connected T J = 130°C 0 0 40 80 120 160 R 200 ta el 0. 3 -D 0. 2K /W 300 100 W K/ 400 = 500 A Maximum Total Power Loss (W) 600 K/ W 0. 5 K/W 0.7 K/ W 1 K/ W 2 K/W 0 200 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV) 800 R 700 60° (Rect) 600 SA th Maximum Total Power Loss (W) 900 500 0.2 400 0 .3 300 3 x IRK.105.. Series 6-Pulse Midpoint Connection Bridge T J = 130°C 200 100 0 = 0. 1 Io 0 0 .5 K/ W -D K/ W el ta R K/ W K/ W 1 K /W 50 100 150 200 250 300 350 400 450 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 8 - On-state Power Loss Characteristics Instantaneous On-state Current (A) 1000 100 T J= 25°C T J= 130°C 10 IRK.105.. Series Per Junction 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics 6 www.irf.com IRKU/V105 Series 700 I IRK.105.. Series T J= 125 °C 600 TM = 200 A 100 A 500 50 A 400 20 A 300 10 A 200 100 10 20 30 40 50 60 70 80 140 Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Bulletin I27136 rev. E 10/02 90 100 100 A 100 50 A 80 20 A 10 A 60 40 20 10 Rate Of Fall Of On-state Current - di/dt (A/µs) 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 11 - Recovery Current Characteristics Fig. 10 - Recovery Charge Characteristics Transient Thermal Impedance Z thJC (K/W) I TM = 200 A IRK.105.. Series TJ = 125 °C 120 1 Steady State Value: R thJC = 0.27 K/W (DC Operation) 0.1 IRK.105.. Series Per Junction 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 12 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 15 V, 40 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = 125 °C 1 TJ = -40 °C (b) TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 IRK.105.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 13- Gate Characteristics www.irf.com 7 IRKU/V105 Series Bulletin I27136 rev. E 10/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 8 www.irf.com