ISSI IS41LV32256-35TQ

ISSI
IS41LV32256
256K x 32 (8-Mbit) EDO DYNAMIC RAM
3.3V, 100/83/66 MHz
®
SEPTEMBER 2000
DESCRIPTION
The ISSI IS41LV32256 is organized in a 262,122 x 32-bit
FEATURES
• 262,144-word by 32-bit organization
• Single +3.3V ± 0.3V power supply
• Four CAS inputs for Byte Write and Byte Read
control
• Refresh modes: RAS-Only, CAS-Before-RAS (CBR),
and Hidden
• 512-cycle refresh in 8 ms
• Fast Page Mode with Extended Data Out
• 100-pin PQFP, TQFP package
CMOS Dynamic Random Access Memory. Four CAS signals
facilitate execution of Byte Read and Byte Write operations.
A very fast EDO cycle time of 10 ns allows an operating
frequency of 100 MHz and makes the IS41LV32256 an ideal
frame buffer memory for graphics applications.
The IS41LV32256 is compatible with JEDEC standard
SGRAMs. This 8-Mbit EDO memory offers a significantly
lower latency and a faster memory cycle than the SGRAM.
ISSI's IS41LV32256 3.3V 256K x 32 device is pin/voltage
compatible with all standard SGRAM parts.
The IS41LV32256 is available in a 100-pin PQFP and TQFP
package.
KEY TIMING PARAMETERS
Parameter
-28
-30
-35
Unit
Max. RAS Access Time (tRAC)
28
30
35
ns
Max. CAS Access Time (tCAC)
9
9
10
ns
Max. Column Address Access Time (tAA)
15
16
18
ns
Max. OE Access Time (tOE)
9
9
10
ns
Min. Read/Write Cycle Time (tRC)
48
53
60
ns
Min. EDO Cycle Time (tPC)
12
12
15
ns
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
1
ISSI
IS41LV32256
®
FUNCTIONAL BLOCK DIAGRAM
OE
OE
CLOCK
GENERATOR
WE
WE
CLOCK
GENERATOR
Data I/O
Buffers
CAS0
CAS1
CAS2
CAS3
I/O0-31
CAS
CLOCK
GENERATOR
AY0-AY8
COLUMN DECODERS
A0-A8
SENSE AMPLIFIERS
CONTROLS
AX0-AX8
RAS
2
ROW DECODERS
512 x 32
512
MEMORY ARRAY
256K x 32
RAS
CLOCK
GENERATOR
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
ISSI
IS41LV32256
®
PIN CONFIGURATIONS
I/O2
GND
I/O1
I/O0
Vcc
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
GND
I/O31
I/O30
GND
I/O29
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100-Pin PQFP, TQFP
Vcc
Vcc
15
66
GND
GND
16
65
Vcc
I/O20
17
64
I/O11
I/O21
18
63
I/O10
GND
19
62
GND
I/O22
20
61
I/O9
I/O23
21
60
I/O8
Vcc
22
59
Vcc
CAS0
23
58
NC
CAS2
24
57
CAS3
WE
25
56
CAS1
NC
26
55
NC
NC
27
54
NC
RAS
28
53
OE
NC
29
52
NC
NC
30
51
A8
50
67
A7
14
49
I/O12
Vcc
A6
68
48
13
A5
I/O13
I/O19
47
69
A4
12
46
GND
I/O18
GND
70
45
11
NC
I/O14
GND
44
71
NC
10
43
I/O15
I/O17
NC
72
42
9
NC
Vcc
I/O16
41
73
NC
8
40
I/O24
Vcc
NC
74
39
7
NC
I/O25
I/O7
38
75
NC
6
37
GND
I/O6
NC
76
36
5
NC
I/O26
GND
35
77
Vcc
4
34
I/O27
I/O5
A3
78
33
3
A2
Vcc
I/O4
32
I/O28
79
31
80
2
A1
1
Vcc
A0
I/O3
PIN DESCRIPTIONS
A0-A8
RAS
Address Inputs
Row Address Strobe
CAS0
Column Address Strobe for First Byte (I/O0-I/O7)
CAS1
Column Address Strobe for Second Byte (I/O8-I/O15)
CAS2
Column Address Strobe for Third Byte (I/O16-I/O23)
CAS3
Column Address Strobe for Fourth Byte (I/O24-I/O31)
WE
Write Enable
OE
Output Enable
I/O0-I/O31
Data Inputs/Outputs
Vcc
+3.3V Supply
GND
Ground
NC
No Connection: This pin should be left unconnected or tied to ground.
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
3
ISSI
IS41LV32256
®
TRUTH TABLE
Function
RAS CAS0 CAS1 CAS2 CAS3 WE
OE
Address
I/O
High-Z
DOUT
I/O0-7=DOUT;
I/O8-31=High-Z
I/O0-7=High-Z;
I/O8-15=DOUT;
I/O16-31=High-Z
I/O0-15=High-Z;
I/O16-23=DOUT;
I/O24-31=High-Z
I/O0-23=High-Z;
I/O24-31=DOUT
Standby
Read: Double Word
Read: 1st Byte
H
L
L
H
L
L
H
L
H
H
L
H
H
L
H
X
H
H
X
L
L
X
ROW/COL
ROW/COL
Read: 2nd Byte
L
H
L
H
H
H
L
ROW/COL
Read: 3rd Byte
L
H
H
L
H
H
L
ROW/COL
Read: 4th Byte
L
H
H
H
L
H
L
ROW/COL
Write: Double Word (Early)
Write: 1st Byte (Early)
L
L
L
L
L
H
L
H
L
H
L
L
X
X
ROW/COL
ROW/COL
Write: 2nd Byte (Early)
L
H
L
H
H
L
X
ROW/COL
Write: 3rd Byte (Early)
L
H
H
L
H
L
X
ROW/COL
Write: 4th Byte (Early)
L
H
H
H
L
L
X
ROW/COL
L
H∅L
H∅L
H∅L
H∅L
H∅L
H∅L
H∅L
H∅L
L
L
H
L
L
H∅L
H∅L
H∅L
H∅L
H∅L
H∅L
H∅L
H∅L
L
L
H
L
Read-Write(1,2)
L
L
(2)
Fast-Page-Mode Read: EDO 1st Cycle:
L
H∅L
Subsequent Cycles:
L
H∅L
Fast-Page-Mode Read: High-Z(2) 1st Cycle:
L
H∅L
Subsequent Cycles:
L
H∅L
Fast-Page-Mode Write: (Early)(1) 1st Cycle:
L
H∅L
Subsequent Cycles:
L
H∅L
Fast-Page-Mode Read-Write(1,2) 1st Cycle:
L
H∅L
Subsequent Cycles:
L
H∅L
Hidden Refresh Read(2)
L∅H∅L L
(1)
Hidden Refresh Write
L∅H∅L L
RAS-Only Refresh
L
H
(3)
CBR Refresh
H∅L
L
L H∅L L∅H
H∅L H
L
H∅L H
L
H∅L H H∅L
H∅L H H∅L
H∅L L
X
H∅L L
X
H∅L H∅L L∅H
H∅L H∅L L∅H
L
H
L
L
L
X
H
X
X
L
X
X
ROW/COL
ROW/COL
COL
ROW/COL
COL
ROW/COL
COL
ROW/COL
COL
ROW/COL
ROW/COL
ROW
X
DIN
I/O0-7=DIN;
I/O8-31=X
I/O0-8=X;
I/O8-15=DIN;
I/O16-31=X
I/O0-15=X;
I/O16-23=DIN;
I/O24-31=X
I/O0-23=X;
I/O24-31=DIN
DOUT∅DIN
DOUT
DOUT
DOUT
DOUT
DIN
DIN
DOUT∅DIN
DOUT∅DIN
DOUT
DIN∅High-Z
High-Z
High-Z
Notes:
1. BYTE WRITE may be executed with CAS0, CAS1, CAS2 or CAS3 active.
2. BYTE READ may be executed with CAS0, CAS1, CAS2 or CAS3 active.
3. Only one CAS signal (CAS0, CAS1, CAS2 or CAS3) must be active.
4
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
ISSI
IS41LV32256
®
POWER-ON
The initial application of the VCC supply requires a 200-µs
wait followed by a minimum of any eight initialization
cycles containing a RAS clock. During Power-On, the VCC
current is dependent on the input levels of RAS and CAS.
It is recommended that RAS and CAS track with VCC or be
held at a valid VIH during Power-On to avoid current
surges.
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
tA
tSTG
VT
IOUT
PD
Ambient Temperature Under Bias
Storage Temperature
Voltage Relative to GND
Data Output Current
Power Dissipation
Rating
Unit
–1.0 to +80
–50 to +125
–1.0 to +5.5
50
1.0
°C
°C
V
mA
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS(1) (TA = 0°C to 70°C)
Symbol
VCC
VIH
VIL
Parameter
Min.
Typ.
Max.
Unit
Power Supply
Input High Voltage
Input Low Voltage
3.0
2.4
–0.5
3.3
—
—
3.6
VCC + 0.5
0.4
V
V
V
Note:
1. Voltages are referenced to GND.
CAPACITANCE(1,2)
Symbol
Parameter
CIN
CIO
Input Capacitance
Data Input/Output Capacitance
Max.
Unit
5
7
pF
pF
Notes:
1. Capacitance is sampled and 100% tested.
2. Test conditions: TA = 25°C, f = 1 MHz, VCC = 3.3V.
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
5
ISSI
IS41LV32256
®
DC CHARACTERISTICS (TA = 0°C to 70°C, VCC = 3.3V ± 0.3V)
-28
Min. Max.
Symbol
Parameter
Condition
VIH
VIL
VOH
VOL
ILI
ILO
Input HIGH (Logic 1) Voltage, All Inputs
Input LOW (Logic 1) Voltage, All Inputs
Output HIGH Voltage
Output LOW Voltage
Input Leakage Current
Output Leakage Current
ICC1
Average Power Supply Current
(Operating)(2,3,15,16)
Power Supply Current (Standby)
Average Power Supply Current
(RAS-Only Refresh)(2,3,15,16)
Average Power Supply Current
(Fast Page Mode)(2,3,15,18)
Average Power Supply Current
(CAS-before-RAS Refresh)(2,3,15.16)
—
2.0 Vcc + 0.5
—
–0.5
0.8
IOH = –2 mA
2.4
Vcc
IOL = 2 mA
0
0.4
0V < VIN < VCC
–10
10
0V < VOUT < 3.6V;
–10
10
Output Disable
RAS, CAS Cycling;
—
250
tRC = Min.
RAS, CAS = VIH
—
2.5
RAS = Cycling;
—
250
CAS = VIH; tRC = Min.
RAS = VIL;
—
230
CAS = Cycling; tPC = Min.
RAS = Cycling;
—
250
CAS-before-RAS
CMOS Standby Current
RAS, CAS = VCC –0.2V
ICC2
Icc3
ICC4
ICC5
ICC6
—
600
-30
Min. Max.
-35
Min. Max.
2.0 Vcc + 0.5
–0.5
0.8
2.4
Vcc
0
0.4
–10
10
–10
10
2.0 Vcc + 0.5
–0.5
0.8
2.4
Vcc
0
0.4
–10
10
–10
10
Units
V
V
V
V
µA
µA
—
250
—
240
mA
—
—
2.5
250
—
—
2.5
240
mA
mA
—
230
—
220
mA
—
250
—
240
mA
—
600
—
600
µA
AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.)
-28
Symbol
tRC
tRAC
tCAC
tAA
tRAS
tRP
tCAS
tCP
tCSH
tRCD
tASR
tRAH
tASC
tCAH
tAR
tRAD
tRAL
tRPC
tRSH
6
Parameter
Random READ or WRITE Cycle Time
Access Time from RAS(6, 7)
Access Time from CAS(6, 8, 15)
Access Time from Column-Address(6)
RAS Pulse Width
RAS Precharge Time
CAS Pulse Width(26)
CAS Precharge Time(9, 25)
CAS Hold Time (21)
RAS to CAS Delay Time(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time(20)
Column-Address Hold Time(20)
Column-Address Hold Time
(referenced to RAS)
RAS to Column-Address Delay Time(11)
Column-Address to RAS Lead Time
RAS to CAS Precharge Time
RAS Hold Time(27)
-30
-35
Min.
48
—
—
—
28
17
5
5
28
10
0
6
0
5
21
Max.
—
28
9
15
10K
—
10K
—
—
19
—
—
—
—
—
Min.
53
—
—
—
30
18
5
5
30
10
0
6
0
5
22
Max.
—
30
9
16
10K
—
10K
—
—
21
—
—
—
—
—
Min.
60
—
—
—
35
20
6
5
35
11
0
7
0
6
25
Max.
—
35
10
18
10K
—
10K
—
—
28
—
—
—
—
—
8
15
0
7
13
—
—
—
8
16
0
7
15
—
—
—
9
18
0
8
16
—
—
—
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(Continued)
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
ISSI
IS41LV32256
®
AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.)
-28
Symbol
tCLZ
tCRP
tOD
tOE
tOEHC
tOEP
tOES
tRCS
tRRH
tRCH
tWCH
tWCR
tWP
tWPZ
tRWL
tCWL
tWCS
tDHR
tACH
tOEH
tDS
tDH
tRWC
tRWD
tCWD
tAWD
tPC
tRASP
tCPA
tPRWC
tCHO
tOFF
tWHZ
Parameter
CAS to Output in Low-Z(15, 29)
CAS to RAS Precharge Time(21)
Output Disable Time(19, 28, 29)
Output Enable Time(15, 16)
OE HIGH Hold Time from CAS HIGH
OE HIGH Pulse Width
OE LOW to CAS HIGH Setup Time
Read Command Setup Time(17, 20)
Read Command Hold Time
(referenced to RAS)(12)
Read Command Hold Time
(referenced to CAS)(12, 17, 21)
Write Command Hold Time(17, 27)
Write Command Hold Time
(referenced to RAS)(17)
Write Command Pulse Width(17)
WE Pulse Widths to Disable Outputs
Write Command to RAS Lead Time(17)
Write Command to CAS Lead Time(17, 21)
Write Command Setup Time(14, 17, 20)
Data-in Hold Time (referenced to RAS)
Column-Address Setup Time to CAS
Precharge during WRITE Cycle
OE Hold Time from WE during
READ-MODIFY-WRITE cycle(18)
Data-In Setup Time(15, 22)
Data-In Hold Time(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS to WE Delay Time during
READ-MODIFY-WRITE Cycle(14)
CAS to WE Delay Time(14, 20)
Column-Address to WE Delay Time(14)
EDO Page Mode READ or WRITE
Cycle Time(24)
RAS Pulse Width in EDO Page Mode
Access Time from CAS Precharge(15)
EDO Page Mode READ-WRITE
Cycle Time(24)
Data Output Hold after CAS LOW
Output Buffer Turn-Off Delay from
CAS or RAS(13,15,19, 29)
Output Disable Delay from WE
-30
-35
Min.
3
5
3
—
10
10
5
0
0
Max.
—
—
15
9
—
—
—
—
—
Min.
3
5
3
—
10
10
5
0
0
Max.
—
—
15
9
—
—
—
—
—
Min.
3
5
3
—
10
10
5
0
0
Max.
—
—
15
10
—
—
—
—
—
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
0
—
0
—
0
—
ns
5
21
—
—
5
22
—
—
5
24
—
—
ns
ns
5
10
7
5
0
21
15
—
—
—
—
—
—
—
5
10
7
5
0
22
15
—
—
—
—
—
—
—
6
10
8
8
0
24
15
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
5
—
5
—
6
—
ns
0
5
73
40
—
—
—
—
0
5
73
40
—
—
—
—
0
6
80
45
—
—
—
—
ns
ns
ns
ns
18
24
12
—
—
—
18
25
12
—
—
—
20
30
15
—
—
—
ns
ns
ns
28
—
34
100K
17
—
30
—
35
100K
18
—
35
—
40
100K
21
—
ns
ns
ns
3
3
—
7
3
3
—
7
3
3
—
15
ns
ns
3
10
3
10
3
15
ns
(Continued)
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
7
ISSI
IS41LV32256
®
AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.)
-28
Symbol
tCLCH
tCSR
tCHR
tORD
tREF
tT
Parameter
Last CAS going LOW to First CAS
returning HIGH(23)
CAS Setup Time (CBR REFRESH)(30, 20)
CAS Hold Time (CBR REFRESH)(30, 21)
OE Setup Time prior to RAS during
HIDDEN REFRESH Cycle
Refresh Period (512 Cycles)
Transition Time (Rise or Fall)(2, 3)
-30
-35
Min.
10
Max.
—
Min.
10
Max.
—
Min.
10
Max.
—
Units
ns
5
7
0
—
—
—
5
7
0
—
—
—
8
8
0
—
—
—
ns
ns
ns
—
1
8
50
—
1
8
50
—
1
8
50
ms
ns
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH and
VIL (or between VIL and VIH) and assume to be 1 ns for all inputs.
3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH)
in a monotonic manner.
4. If CAS and RAS = VIH, data output is High-Z.
5. If CAS = VIL, data output may contain data from the last valid READ cycle.
6. Measured with a load equivalent to one TTL gate and 50 pF.
7. Assumes that tRCD - tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by
the amount that tRCD exceeds the value shown.
8. Assumes that tRCD • tRCD (MAX).
9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the
data output buffer, CAS and RAS must be pulsed for tCP.
10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD
is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC.
11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD
is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA.
12. Either tRCH or tRRH must be satisfied for a READ cycle.
13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL.
14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS • tWCS
(MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD • tRWD
(MIN), tAWD • tAWD (MIN) and tCWD • tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from
the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back
to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle.
15. Output parameter (I/O) is referenced to corresponding CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS.
16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a LATE
WRITE or READ-MODIFY-WRITE is not possible.
17. Write command is defined as WE going low.
18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure
that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW
and OE is taken back to LOW after tOEH is met.
19. The I/Os are in open during READ cycles once tOD or tOFF occur.
20. The first χCAS edge to transition LOW.
21. The last χCAS edge to transition HIGH.
22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles.
23. Last falling χCAS edge to first rising χCAS edge.
24. Last rising χCAS edge to next cycle’s last rising χCAS edge.
25. Last rising χCAS edge to first falling χCAS edge.
26. Each χCAS must meet minimum pulse width.
27. Last χCAS to go LOW.
28. I/Os controlled, regardless UCAS and LCAS.
29. The 3 ns minimum is a parameter guaranteed by design.
30. Enables on-chip refresh and address counters.
8
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
ISSI
IS41LV32256
®
READ CYCLE (Outputs Controlled by RAS)
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS tCLCH
tRCD
tRRH
CAS0-CAS3
tAR
tRAD
tASR
ADDRESS
tRAH
tRAL
tCAH
tASC
Row
Column
Row
tRCS
tRCH
WE
tAA
tRAC
tCAC
tCLC
I/O
tOFF(1)
Open
Open
Valid Data
tOE
tOD
OE
tOES
Don't Care
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
9
ISSI
IS41LV32256
®
READ CYCLE (Outputs Controlled by CAS)
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS tCLCH
tRCD
tRRH
CAS0-CAS3
tAR
tRAD
tRAH
tASR
ADDRESS
tRAL
tCAH
tASC
Row
Column
Row
tRCS
tRCH
WE
tAA
tRAC
tCAC
tCLC
I/O
tOFF(1)
Open
Open
Valid Data
tOE
tOD
OE
tOES
10
Don't Care
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
ISSI
IS41LV32256
®
EARLY WRITE CYCLE (OE = DON'T CARE)
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS tCLCH
tRCD
CAS0-CAS3
tAR
tRAD
tRAH
tASR
ADDRESS
tRAL
tCAH
tACH
tASC
Row
Column
Row
tCWL
tRWL
tWCR
tWCS
tWCH
tWP
WE
tDHR
tDS
I/O
tDH
Valid Data
Don't Care
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
11
ISSI
IS41LV32256
®
READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles)
tRWC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS tCLCH
tRCD
CAS0-CAS3
tAR
tRAD
tRAH
tASR
tRAL
tCAH
tASC
tACH
ADDRESS
Row
Column
Row
tRWD
tCWL
tRWL
tCWD
tRCS
tAWD
tWP
WE
tAA
tRAC
tCAC
tCLZ
I/O
tDS
Open
Valid DOUT
tOE
tDH
Valid DIN
Open
tOD
tOEH
OE
Undefined
Don't Care
12
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
ISSI
IS41LV32256
®
EDO-PAGE-MODE READ CYCLE
tRASP
tRP
RAS
tCSH
tCRP
tCAS,
tCLCH
tRCD
tCP
tPC(1)
tCAS,
tCLCH
tCP
tRSH
tCAS,
tCLCH
tCP
CAS0-CAS3
tAR
tRAD
tASR
ADDRESS
tASC
tCAH tASC
Row
Column
tRAL
tCAH
tCAH tASC
Column
Column
Row
tRAH
tRRH
tRCS
tRCH
WE
tAA
tRAC
tCAC
tCLZ
I/O
Open
tAA
tCPA
tCAC
tCOH
Valid Data
tOE
tOES
tAA
tCPA
tCAC
tCLZ
tOFF
Valid Data
tOEHC
Valid Data
Open
tOE
tOD
tOES
tOD
OE
tOEP
Undefined
Don't Care
Note:
1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both
measurements must meet the tPC specifications.
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
13
ISSI
IS41LV32256
®
EDO-PAGE-MODE EARLY-WRITE CYCLE
tRASP
tRP
RAS
tCSH
tCRP
tPC
tCAS,
tCLCH
tRCD
tCP
tCAS,
tCLCH
tRSH
tCAS,
tCLCH
tCP
tCP
CAS0-CAS3
tAR
tACH
tCAH tASC
tRAD
tASR
ADDRESS
tASC
Row
Column
tRAH
tACH
tRAL
tCAH
tACH
tCAH tASC
Column
tCWL
tWCS
Column
tCWL
tWCS
tWCH
tCWL
tWCS
tWCH
tWCH
tWP
tWP
Row
tWP
WE
tWCR
tDHR
tRWL
tDS
tDS
tDH
I/O
Valid Data
tDS
tDH
Valid Data
tDH
Valid Data
OE
Don't Care
14
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
ISSI
IS41LV32256
®
EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles)
tRASP
tRP
RAS
tCSH
tCRP
tCAS, tCLCH
tRCD
tCP
tPC / tPRWC(1)
tCAS, tCLCH
tRSH
tCAS, tCLCH
tCP
tCP
CAS0-CAS3
tASR
tRAH
ADDRESS
tAR
tRAD
tASC
tCAH
Row
tASC
tCAH
Column
tRWD
tRCS
tRAL
tCAH
tASC
Column
tCWL
tWP
Column
tRWL
tCWL
tWP
tCWL
tWP
tAWD
tCWD
Row
tAWD
tCWD
tAWD
tCWD
WE
tAA
tAA
tCPA
tDH
tDS
tRAC
tCAC
tCLZ
I/O
Open
tCAC
tCLZ
DOUT
DIN
DIN
DOUT
tOD
tOE
tDH
tDS
tCAC
tCLZ
DOUT
tOD
tOE
tAA
tCPA
tDH
tDS
Open
DIN
tOD
tOE
tOEH
OE
Undefined
Don't Care
Note:
1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both
measurements must meet the tPC specifications.
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
15
ISSI
IS41LV32256
®
EDO-PAGE-MODE READ-EARLY-WRITE CYCLE (Psuedo READ-MODIFY WRITE)
tRASP
tRP
RAS
tCSH
tPC
tPC
tCRP
tCAS
tRCD
tCAS
tCP
tRSH
tCAS
tCP
tCP
CAS0-CAS3
tASR
tRAH
ADDRESS
tAR
tRAD
tASC
Row
tCAH
tASC
tCAH
Column (A)
tASC
Column (B)
tRCS
tACH
tRAL
tCAH
Column (N)
Row
tRCH
tWCS
tWCH
WE
tAA
tRAC
tCAC
tCPA
tCAC
tAA
tWHZ
tCOH
I/O
Open
Valid Data (A)
tDS
Valid Data (B)
tDH
DIN
Open
tOE
OE
Don't Care
16
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
ISSI
IS41LV32256
®
AC WAVEFORMS
READ CYCLE (With WE-Controlled Disable)
RAS
tCSH
tCRP
tRCD
tCP
tCAS
CAS0-CAS3
tAR
tRAD
tASR
ADDRESS
tRAH
tCAH
tASC
Row
tASC
Column
tRCS
Column
tRCH
tRCS
WE
tAA
tRAC
tCAC
tCLZ
Open
I/O
tWHZ
tCLZ
Valid Data
Open
tOE
tOD
OE
Undefined
Don't Care
RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE)
tRC
tRAS
tRP
RAS
tCRP
tRPC
CAS0-CAS3
tASR
ADDRESS
I/O
tRAH
Row
Row
Open
Don't Care
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
17
ISSI
IS41LV32256
®
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)
tRP
tRAS
tRP
tRAS
RAS
tCHR
tRPC
tCP
tCHR
tRPC
tCSR
tCSR
CAS0-CAS3
Open
I/O
HIDDEN REFRESH CYCLE (WE = HIGH; OE = LOW)(1)
tRAS
tRP
tRAS
RAS
tCRP
tRCD
tASR
tRAD
tRAH tASC
tRSH
tCHR
CAS0-CAS3
tAR
ADDRESS
Row
tRAL
tCAH
Column
tAA
tRAC
tOFF(2)
tCAC
tCLZ
I/O
Open
Open
Valid Data
tOE
tOD
tORD
OE
Undefined
Don't Care
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.
2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
18
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
ISSI
IS41LV32256
®
ORDERING INFORMATION
Commercial Range: 0⋅⋅ C to 70⋅⋅ C
Speed (ns)
28
30
35
Order Part No.
Package
IS41LV32256-28PQ
IS41LV32256-28TQ
IS41LV32256-30PQ
IS41LV32256-30TQ
IS41LV32256-35PQ
IS41LV32256-35TQ
PQFP
TQFP
PQFP
TQFP
PQFP
TQFP
ISSI
®
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: [email protected]
www.issi.com
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
19