ICSI IS61LV6416-8B

IS61LV6416
64K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 8, 10, 12, and 15 ns
• CMOS low power operation
— 250 mW (typical) operating
— 250 µW (typical) standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
DESCRIPTION
The 1+51 IS61LV6416 is a high-speed, 1,048,576-bit static
RAM organized as 65,536 words by 16 bits. It is fabricated
using 1+51's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61LV6416 is packaged in the JEDEC standard 44-pin
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TFBGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR013-0C
1
IS61LV6416
PIN CONFIGURATIONS
44-Pin SOJ
A15
1
44
A0
A14
2
43
A1
A13
3
42
A2
A12
4
41
OE
A11
5
40
UB
CE
6
39
LB
I/O0
7
38
I/O15
I/O1
8
37
I/O14
I/O2
9
36
I/O13
I/O3
10
35
I/O12
Vcc
11
34
GND
GND
12
33
Vcc
I/O4
13
32
I/O11
I/O5
14
31
I/O10
I/O6
15
30
I/O9
I/O7
16
29
I/O8
WE
17
28
NC
A10
18
27
A3
A9
19
26
A4
A8
20
25
A5
A7
21
24
A6
NC
22
23
NC
44-Pin TSOP-2
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
48-Pin 6x8mm TF-BGA
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
PIN DESCRIPTIONS
A0-A15
Address Inputs
N/C
I/O0-I/O15
Data Inputs/Outputs
CE
I/O15
CE
Chip Enable Input
A4
I/O13
I/O14
OE
Output Enable Input
NC
A5
I/O12
Vcc
WE
Write Enable Input
I/O4
NC
NC
I/O11
GND
LB
Lower-byte Control (I/O0-I/O7)
I/O5
I/O6
A9
A8
I/O10
I/O9
UB
Upper-byte Control (I/O8-I/O15)
G
I/O7
NC
A11
A10
WE
I/O8
NC
No Connection
H
NC
A12
A13
A14
A15
NC
Vcc
Power
GND
Ground
1
2
3
4
5
6
A
LB
OE
A3
A7
A6
B
I/O0
UB
A2
A1
C
I/O1
I/O2
A0
D
GND
I/O3
E
Vcc
F
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
2
WE
CE
OE
LB
UB
X
H
X
H
H
H
L
L
L
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
L
I/O PIN
I/O0-I/O7 I/O8-I/O15
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
High-Z
High-Z
High-Z
DOUT
DOUT
High-Z
DIN
DIN
Vcc Current
ISB, ISB
ICC
ICC
ICC
Integrated Circuit Solution Inc.
SR013-0C
IS61LV6416
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TSTG
PT
IOUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to Vcc+0.5
–65 to +150
1.5
20
Unit
V
°C
W
mA
Note:
1. Stress greater than those listed under
ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the
device. This is a stress rating only and
functional operation of the device at
these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating
conditions for extended periods may
affect reliability.
!
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
Vcc
3.3V ± 10%
3.3V ± 10%
"
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
—
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
—
0.4
V
VIH
Input HIGH Voltage
2
VCC + 0.3
V
–0.3
0.8
V
Voltage(1)
VIL
Input LOW
ILI
Input Leakage
GND ≤ VIN ≤ VCC
Com.
Ind.
–2
-5
2
5
µA
ILO
Output Leakage
GND ≤ VOUT ≤ VCC, Outputs Disabled
Com.
Ind.
–2
-5
2
5
µA
#
$
%
&
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
2. The Vcc operating range for 8 ns is 3.3V +10%, -5%.
'
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 ns
Min. Max.
-10 ns
Min. Max.
-12 ns
Min. Max.
-15 ns
Min. Max.
Symbol
Parameter
Test Conditions
ICC
Vcc Dynamic Operating
Supply Current
VCC = Max.,
IOUT = 0 mA, f = fMAX
Com.
Ind.
—
—
220
230
—
—
200
210
—
—
180
190
—
—
180
190
mA
ISB
TTL Standby Current
(TTL Inputs)
VCC = Max.,
VIN = VIH or VIL
CE ≥ VIH , f = 0
Com.
Ind.
—
—
30
40
—
—
30
40
—
—
30
40
—
—
30
40
mA
ISB
CMOS Standby
Current (CMOS Inputs)
VCC = Max.,
CE ≥ VCC – 0.2V,
VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
—
—
10
15
—
—
10
15
—
—
10
15
—
—
10
15
mA
Unit
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Circuit Solution Inc.
SR013-0C
3
IS61LV6416
CAPACITANCE(1)
Symbol
Parameter
CIN
Input Capacitance
COUT
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
Parameter
Min.
-8
Max.
-10
Min. Max.
-12
Min. Max.
-15
Min. Max.
Unit
tRC
Read Cycle Time
8
—
10
—
12
—
15
—
ns
tAA
Address Access Time
—
8
—
10
—
12
—
15
ns
tOHA
Output Hold Time
3
—
3
—
3
—
3
—
ns
tACE
CE Access Time
—
8
—
10
—
12
—
15
ns
OE Access Time
—
4
—
5
—
6
—
7
ns
OE to High-Z Output
0
4
—
5
—
6
0
6
ns
tLZOE OE to Low-Z Output
0
—
0
—
0
—
0
—
ns
tHZCE
CE to High-Z Output
0
4
0
5
0
6
0
6
ns
tLZCE
CE to Low-Z Output
3
—
3
—
3
—
3
—
ns
tBA
LB, UB Access Time
—
4
—
5
—
6
—
7
ns
tHZB
LB, UB to High-Z Output
0
4
0
5
0
6
0
6
ns
tLZB
LB, UB to Low-Z Output
0
—
0
—
0
—
0
—
ns
tDOE
tHZOE
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1a and 1b
Notes:
1. The Vcc operating range for 8 ns is 3.3V +10%, -5%.
AC TEST LOADS
319 Ω
319 Ω
3.3V
3.3V
OUTPUT
OUTPUT
30 pF
Including
jig and
scope
Figure 1a.
4
353 Ω
5 pF
Including
jig and
scope
353 Ω
Figure 1b.
Integrated Circuit Solution Inc.
SR013-0C
IS61LV6416
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CS = OE = VIL, UB or LB = VIL)
t RC
ADDRESS
t AA
t OHA
t OHA
DOUT
!
DATA VALID
PREVIOUS DATA VALID
"
READ CYCLE NO. 2(1,3)
#
tRC
ADDRESS
tAA
tOHA
$
OE
tHZOE
tDOE
%
tLZOE
CE
tACE
tHZCE
tLZCE
&
LB, UB
tBA
DOUT
HIGH-Z
tHZB
tLZB
'
DATA VALID
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = VIL.
3. Address is valid prior to or coincident with CE LOW transition.
Integrated Circuit Solution Inc.
SR013-0C
5
IS61LV6416
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
Symbol
Parameter
Min.
-8
Max.
-10
Min. Max.
-12
Min. Max.
-15
Min. Max.
Unit
tWC
Write Cycle Time
8
—
10
—
12
—
15
—
ns
tSCE
CE to Write End
7
—
8
—
9
—
10
—
ns
tAW
Address Setup Time
to Write End
7
—
8
—
9
—
10
—
ns
tHA
Address Hold from Write End
0
—
0
—
0
—
0
—
ns
tSA
Address Setup Time
0
—
0
—
0
—
0
—
ns
tPWB
LB, UB Valid to End of Write
7
—
8
—
9
—
10
—
ns
tPWE
WE Pulse Width
7
—
8
—
9
—
10
—
ns
tSD
Data Setup to Write End
4.5
—
5
—
6
—
7
—
ns
Data Hold from Write End
0
—
0
—
0
—
0
—
ns
WE LOW to High-Z Output
—
4
—
5
—
6
—
7
ns
tLZWE WE HIGH to Low-Z Output
3
—
3
—
3
—
3
—
ns
tHD
tHZWE
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
6
Integrated Circuit Solution Inc.
SR013-0C
IS61LV6416
AC WAVEFORMS
WRITE CYCLE NO. 1 (WE
WE Controlled)(1,2)
tWC
ADDRESS
tHA
tSCE
!
CE
tPWB
"
LB, UB
tAW
tPWE
#
WE
tSA
$
WRITE(1)
tSD
tHD
%
DIN
tHZWE
DOUT
HIGH-Z
tLZWE
UNDEFINED
HIGH-Z
&
UNDEFINED
'
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least
one of the LB and UB inputs being in the LOW state.
2. WRITE = (CE) [ (LB) = (UB) ] (WE).
Integrated Circuit Solution Inc.
SR013-0C
7
IS61LV6416
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Speed (ns)
Order Part No.
Package
Speed (ns)
Order Part No.
Package
8
8
8
IS61LV6416-8B
IS61LV6416-8T
IS61LV6416-8K
6*8mm TF-BGA
400mil TSOP-2
400mil SOJ
8
8
8
IS61LV6416-8BI
IS61LV6416-8TI
IS61LV6416-8KI
6*8mm TF-BGA
400mil TSOP-2
400mil SOJ
10
10
10
IS61LV6416-10B
IS61LV6416-10T
IS61LV6416-10K
6*8mm TF-BGA
400mil TSOP-2
400mil SOJ
10
10
10
IS61LV6416-10BI
IS61LV6416-10TI
IS61LV6416-10KI
6*8mm TF-BGA
400mil TSOP-2
400mil SOJ
12
12
12
IS61LV6416-12B
IS61LV6416-12T
IS61LV6416-12K
6*8mm TF-BGA
400mil TSOP-2
400mil SOJ
12
12
12
IS61LV6416-12BI
IS61LV6416-12TI
IS61LV6416-12KI
6*8mm TF-BGA
400mil TSOP-2
400mil SOJ
15
15
15
IS61LV6416-15B
IS61LV6416-15T
IS61LV6416-15K
6*8mm TF-BGA
400mil TSOP-2
400mil SOJ
15
15
15
IS61LV6416-15BI
IS61LV6416-15TI
IS61LV6416-15KI
6*8mm TF-BGA
400mil TSOP-2
400mil SOJ
Integrated Circuit Solution Inc.
HEADQUARTER:
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,
HSIN-CHU, TAIWAN, R.O.C.
TEL: 886-3-5780333
Fax: 886-3-5783000
BRANCH OFFICE:
7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.
TEL: 886-2-26962140
FAX: 886-2-26962252
http://www.icsi.com.tw
8
Integrated Circuit Solution Inc.
SR013-0C