IS62LV12816L IS62LV12816LL IS62LV12816L IS62LV12816LL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION The 1+51 IS62LV12816L and IS62LV12816LL are high-speed, High-speed access times: 55, 70, 100 ns CMOS low power operation -- 120 mW (typical) operating -- 6 µW (typical) CMOS standby TTL compatible interface levels Single 2.7V-3.6V Vcc power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available Available in the 44-pin TSOP-2 and 48-pin 6*8mm TF-BGA 2.097,152-bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected) or when CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using Chip Enable Output and Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62LV12816L and IS62LV12816LL are packaged in the JEDEC standare 44-pin 400mil TSOP-2 and 48-pin 6*8mm TF-BGA. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128K x 16 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte CE OE WE CONTROL CIRCUIT UB LB ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. SR020-0C 1 IS62LV12816L IS62LV12816LL PIN CONFIGURATIONS 48-Pin TF-BGA 44-Pin TSOP-2 A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC 1 2 3 4 5 6 A LB OE A0 A1 A2 N/C B I/O8 UB A3 A4 CE I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 D GND I/O11 NC A7 I/O3 Vcc E Vcc I/O12 NC A16 I/O4 GND F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H NC A8 A9 A10 A11 NC PIN DESCRIPTIONS A0-A16 Address Inputs LB Lower-byte Control (l/O0-I/O7) I/O0-I/O15 Data Input/Output UB Upper-byte Control (l/O8-I/O15) CE Chip Enable Input NC No Connection OE Output Enable Input Vcc Power WE Write Enable Input GND Ground TRUTH TABLE Mode Not Selected WE X X Output Disabled H X Read H H H Write L L L 2 CE OE LB UB I/O0/-I/O7 H L L L L L L L L L X X H X L L L X X X X H X H L H L L H L X H X H H L L H L L High-Z High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN I/O PIN I/O8-I/O15 High-Z High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Vcc Current ISB, ISB ISB, ISB ICC ISB ICC ICC Integrated Circuit Solution Inc. SR020-0C IS62LV12816L IS62LV12816LL OPERATING RANGE Range Commercial Ambient Temperature 0°C to +70°C VCC 2.7V - 3.6V 40°C to +85°C 2.7V - 3.6V Industrial ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TBIAS VCC TSTG PT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Vcc related to GND Storage Temperature Power Dissipation Value 0.5 to Vcc + 0.5 40 to +85 0.3 to +4.0 65 to +150 1.0 Unit V °C V °C W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH VOL VIH VIL ILI ILO Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage VCC = Min., IOH = 1 mA VCC = Min., IOL = 2.1 mA 2.0 2.2 0.2 1 1 0.4 VCC + 0.2 0.4 1 1 V V V V µA µA GND ≤ VIN ≤ VCC GND ≤ VOUT ≤ VCC, OUTPUTS DISABLED Notes: 1. VIL(min.) = 2.0V for pulse width less than 10 ns. CAPACITANCE(1) Symbol Parameter CIN Input Capacitance COUT Output Capacitance Conditions Max. Unit VIN = 0V 6 pF VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. Integrated Circuit Solution Inc. SR020-0C 3 IS62LV12816L IS62LV12816LL AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0.4V to 2.2V 5 ns 1.3V See Figures 1 and 2 AC TEST LOADS 1 TTL 1 TTL OUTPUT OUTPUT 100 pF Including jig and scope 5 pF Including jig and scope Figure 1 Figure 2 IS62LV12816L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter -55 Min. Max. Test Conditions -70 Min. Max. -100 Min. Max. Unit ICC Vcc Dynamic Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX Com. Ind. 40 45 30 35 20 25 mA ISB TTL Standby Current (TTL Inputs) VCC = Max., VIN = VIH or VIL, CE ≤ VIH, f = 0 Com. Ind. 0.4 1.0 0.4 1.0 0.4 1.0 mA 35 50 35 50 35 50 µA OR ISB ULB Control VCC = Max., VIN = VIH or VIL CE = VIL, f = 0, UB = VIH, LB = VIH CMOS Standby Current (CMOS Inputs) VCC = Max., CE ≥ VCC 0.2V, VIN ≥ VCC 0.2V, or VIN ≤ 0.2V, f = 0 OR ULB Control Com. Ind. VCC = Max., CE = VIL VIN ≤ 0.2V, f = 0, UB / LB = VCC 0.2V Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 4 Integrated Circuit Solution Inc. SR020-0C IS62LV12816L IS62LV12816LL IS62LV12816LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -55 Min. Max. -70 Min. Max. -100 Min. Max. Symbol Parameter Test Conditions ICC Vcc Dynamic Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX Com. Ind. 40 45 30 35 20 25 mA ISB TTL Standby Current (TTL Inputs) VCC = Max., VIN = VIH or VIL, CE ≥ VIH, f = 0 Com. Ind. 0.4 1.0 0.4 1.0 0.4 1.0 mA 10 15 10 15 10 15 µA OR ISB ULB Control VCC = Max., VIN = VIH or VIL CE = VIL, f = 0, UB = VIH, LB = VIH CMOS Standby Current (CMOS Inputs) VCC = Max., f = 0 CE ≥ VCC 0.2V, VIN ≥ VCC 0.2V, or VIN ≤ 0.2V, f = 0 OR ULB Control Com. Ind. Unit VCC = Max., CE = VIL VIN ≤ 0.2V, f = 0, UB / LB = VCC 0.2V Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Min. -55 Max. Min. -70 Max. -100 Min. Max. Unit tRC Read Cycle Time 55 70 100 ns tAA Address Access Time 55 70 100 ns tOHA Output Hold Time 10 10 15 ns tACE CE Access Time 55 70 100 ns tDOE OE Access Time 30 35 50 ns tHZOE OE to High-Z Output 20 25 30 ns tLZOE OE to Low-Z Output 5 5 5 ns tHZCE CE to High-Z Output 0 20 0 25 0 30 ns tLZCE CE to Low-Z Output 10 10 10 ns tBA LB, UB Access Time 55 70 100 ns tHZB LB, UB o High-Z Output 0 25 0 25 0 35 ns tLZB LB. UB to Low-Z Output 0 0 0 ns Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.3V, input pulse levels of 0.4V to 2.2V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. Integrated Circuit Solution Inc. SR020-0C 5 IS62LV12816L IS62LV12816LL AC TEST LOADS READ CYCLE NO.1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL) tRC ADDRESS tAA tOHA tOHA DOUT DATA VALID PREVIOUS DATA VALID AC WAVEFORMS READ CYCLE NO. 2(1,3) (CS, OE, AND UB/LB Controlled) tRC ADDRESS tAA tOHA OE tHZOE tDOE tLZOE CE tACE tHZCE tBA tHZB tLZCE LB, UB DOUT HIGH-Z tLZB DATA VALID Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transitions. 6 Integrated Circuit Solution Inc. SR020-0C IS62LV12816L IS62LV12816LL WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) Symbol Parameter Min. -55 Max. Min. -70 -100 Min. Max Max. Unit tWC Write Cycle Time 55 70 100 ns tSCE CE to Write End 50 65 80 ns tAW Address Setup Time to Write End 50 65 80 ns tHA Address Hold from Write End 0 0 0 ns tSA Address Setup Time 0 0 0 ns tPWB LB, UB Valid to End of Write 45 60 80 ns tPWE WE Pulse Width 45 60 80 ns tSD Data Setup to Write End 25 30 40 ns Data Hold from Write End 0 0 0 ns WE LOW to High-Z Output 30 30 40 ns tLZWE! WE HIGH to Low-Z Output 5 5 5 ns tHD tHZWE ! Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.3V, input pulse levels of 0.4V to 2.2V and output loading specified in Figure 1. 2. The internal write time is defined by the overlap of CE LOW, and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC WAVEFORMS WRITE CYCLE NO. 1(1,2) (CS, Controlled, OE = HIGH or LOW) t WC VALID ADDRESS ADDRESS t SA t SCS t HA CS t AW t PWE1 t PWE2 WE t PWB UB, LB t HZWE DOUT DATA UNDEFINED t LZWE HIGH-Z t SD DIN t HD DATAIN VALID Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS and WE inputs and at least one of the LB and UB inputs being in the LOW state. 2. WRITE = (CS) [ (LB) = (UB) ] (WE). Integrated Circuit Solution Inc. SR020-0C 7 IS62LV12816L IS62LV12816LL WRITE CYCLE NO. 2 (WE Controlled; OE is HIGH During Write Cycle) t WC ADDRESS VALID ADDRESS t HA OE CS LOW t AW t PWE1 WE t SA t PWB UB, LB t HZWE DOUT t LZWE HIGH-Z DATA UNDEFINED t SD t HD DATAIN VALID DIN WRITE CYCLE NO. 3 (WE Controlled; OE is LOW During Write Cycle) t WC ADDRESS VALID ADDRESS OE LOW CS LOW t HA t AW t PWE2 WE t SA t PWB UB, LB t HZWE DOUT DATA UNDEFINED t LZWE HIGH-Z t SD DIN 8 t HD DATAIN VALID Integrated Circuit Solution Inc. SR020-0C IS62LV12816L IS62LV12816LL WRITE CYCLE NO. 4 (UB / LB Controlled) t WC ADDRESS t WC ADDRESS 1 ADDRESS 2 OE t SA CS LOW t HA t SA WE UB, LB t HA t PWB t PWB WORD 1 WORD 2 t HZWE DOUT t LZWE HIGH-Z DATA UNDEFINED t HD t SD DATAIN VALID DIN t HD t SD DATAIN VALID DATA RETENTION SWITCHING CHARACTERISTICS (L/LL) Symbol Parameter Test Condition Min. Max. Unit VDR Vcc for Data Retention See Data Retention Waveform 1.5 3.6 V IDR Data Retention Current Vcc = 2.0V, CE ≥ Vcc 0.2V 20 5 25 7 µA µA µA µA Data Retention Setup Time See Data Retention Waveform 0 ns Recovery Time See Data Retention Waveform tRC ns tSDR tRDR DATA RETENTION WAVEFORM tSDR Com. (-L) Com. (-LL) Ind. (-L) Ind. (-LL) (CE Controlled) Data Retention Mode tRDR VCC 2.7V 2.2V VDR CE ≥ VCC - 0.2V CE GND Integrated Circuit Solution Inc. SR020-0C 9 IS62LV12816L IS62LV12816LL ORDERING INFORMATION Commercial Range: 0°C to +70°C Industrial Range: -40°C to +85°C Speed (ns) Order Part No. Speed (ns) Order Part No. Package Package 55 IS62LV12816L-55T IS62LV12816L-55B 400mil TSOP-2 6*8mm TF-BGA 55 IS62LV12816L-55TI IS62LV12816L-55BI 400mil TSOP-2 6*8mm TF-BGA 70 IS62LV12816L-70T IS62LV12816L-70B 400mil TSOP-2 6*8mm TF-BGA 70 IS62LV12816L-70TI IS62LV12816L-70BI 400mil TSOP-2 6*8mm TF-BGA 100 IS62LV12816L-100T IS62LV12816L-100B 400mil TSOP-2 6*8mm TF-BGA 100 IS62LV12816L-100TI IS62LV12816L-100BI 400mil TSOP-2 6*8mm TF-BGA ORDERING INFORMATION Commercial Range: 0°C to +70°C Industrial Range: -40°C to +85°C Speed (ns) Order Part No. Speed (ns) Order Part No. Package Package 55 IS62LV12816LL-55T IS62LV12816LL-55B 400mil TSOP-2 6*8mm TF-BGA 55 IS62LV12816LL-55TI IS62LV12816LL-55BI 400mil TSOP-2 6*8mm TF-BGA 70 IS62LV12816LL-70T IS62LV12816LL-70B 400mil TSOP-2 6*8mm TF-BGA 70 IS62LV12816LL-70TI IS62LV12816LL-70BI 400mil TSOP-2 6*8mm TF-BGA 100 IS62LV12816LL-100T IS62LV12816LL-100B 400mil TSOP-2 6*8mm TF-BGA 100 IS62LV12816LL-100TI IS62LV12816LL-100BI 400mil TSOP-2 6*8mm TF-BGA Integrated Circuit Solution Inc. HEADQUARTER: NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, TAIWAN, R.O.C. TEL: 886-3-5780333 Fax: 886-3-5783000 BRANCH OFFICE: 7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD, HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. TEL: 886-2-26962140 FAX: 886-2-26962252 http://www.icsi.com.tw 10 Integrated Circuit Solution Inc. SR020-0C