ETC JANTXV2N2432A

INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 27 May 2002.
MIL-PRF-19500/313F
27 February 2002
SUPERSEDING
MIL-PRF-19500/313E
18 August 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER
TYPES 2N2432, 2N2432A, 2N2432UB, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for low power, high speed chopper, NPN
silicon transistors. Four levels of product assurance are provided for each device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for die.
*
1.2 Physical dimensions. See figure 1 (T0-18), figures 2 and 3 (JANHC/JANKC die), and figure 4 (UB package).
*
1.3 Maximum ratings.
Type
2N2432
2N2432A
2N2432UB
PT
TA = +25°C
VCBO
VCEO
VECO
IC
TSTG
TJ
RθJA
mW
V dc
V dc
V dc
mA dc
°C
°C
°C/mW
360 (1)
360 (1)
360 (1)
30
45
30
30
45
30
15
18
15
100
100
100
-65 to +200
-65 to +200
-65 to +200
-65 to +175
-65 to +175
-65 to +175
325
325
325
(1) Derate linearly 2.06 mW/°C for TA > +25.5°C.
*
1.4 Primary electrical characteristics at TA = +25°C.
hFE1
hFE2
VCE = 5 V dc
IC = 10 µA dc
VCE = 5 V dc
IC = 1 mA dc
Limits
Min
Max
30
80
400
hFE(inv)1
VCE = 10 mA dc
IE = 200 µA dc
2N2432
2N2432A
2
3
VCE(sat)
IC = 10 mA dc
IB = 500 µA dc
rec(on)
Ie = 100 µA ac (rms)
IB = 1 mA dc, IE = 0, f = 1 kHz
RθJC
2N2432
2N2432UB
2N2432A
V dc
Ohms
Ohms
°C/mW
.15
20
15
.25
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/313F
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750
-
Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.4).
2
MIL-PRF-19500/313F
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.170
.210
4.32
5.33
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500
.750
12.70
19.05
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.030
0.76
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
Note
6
7,8
7,8
7,8
7,8
7,8
5
3,4
3
10
6
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter
is uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (similar to TO-18).
3
MIL-PRF-19500/313F
Ltr
A
B
φC
φD
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.013
.017
0.330
0.430
.017
.021
0.430
0.533
.0048
0.122
.0034
0.086
NOTES:
1. Chip thickness:
2. Top metal:
3. Back metal:
4. Backside:
.005 to .007 inch (0.127 to 0.178 millimeter).
Aluminum 10,000 Å min, 12,000 Å nominal.
Gold 2,000 Å min, 4,000 Å nominal.
Collector.
FIGURE 2. JANHC (A-version) die dimensions.
4
MIL-PRF-19500/313F
NOTES:
1. Chip size
2. Chip thickness
3. Top metal
4. Back metal
5.
6.
Backside
Bonding pad
7.
Passivation
.015 x .019 inch ±.001 inch, (0.381 x 0.483 ±0.025 millimeter).
.010 ±.0015 inch, (0.254 ±0.0038 millimeter).
Aluminum 15,000Å minimum, 18,000Å nominal.
A. Gold 2,500Å minimum, 3,000Å nominal.
B. Eutectic Mount - No Gold.
Collector
B = .003 inch (0.076 millimeter).
E = .004 inch diameter (0.076 millimeter).
Si3N4 (Silicon Nitride) 2 kÅ min, 2.2 kÅ nom.
FIGURE 3. Physical dimensions, JANHCA and JANKCA (B - version) die.
5
MIL-PRF-19500/313F
Symbol
A
A1
B1
B2
B3
D
D1
D2
D3
E
E3
L1
L2
Inches
Min
.046
.017
.016
.016
.016
.085
.071
.035
.085
.115
.022
.022
Dimensions
Millimeters
Max
Min
Max
.056
0.97
1.42
.035
0.43
0.89
.024
0.41
0.61
.024
0.41
0.61
.024
0.41
0.61
.108
2.41
2.74
.079
1.81
2.01
.039
0.89
0.99
.108
2.41
2.74
.128
2.82
3.25
.128
3.25
.038
0.56
0.96
.038
0.56
0.96
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
* FIGURE 4. Physical dimensions, surface mount (UB version).
6
MIL-PRF-19500/313F
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
V(BR)ECO - - - Breakdown voltage, emitter to collector, with base open circuited.
hFE(inv) - - - Forward current transfer ratio except that the collector and emitter shall be interchanged.
- - - - - Emitter current (rms).
Ie
rec(on)
VBC
- - - Small signal emitter to collector on state resistance.
- - - - Base to collector voltage.
VEC(ofs) - - - Emitter to collector offset voltage, i.e., open circuit voltage between emitter and collector when the
base to collector junction is forward biased.
Vec
- - - - Emitter to collector voltage (rms).
* 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500,
and on figures 1, 2, 3, and 4.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking
may be omitted from the body, but shall be retained on the initial container.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in paragraph 1.3.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table 1.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4, and tables I, II, and III).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 JANHC and JANKC devices. JANHC and JANKC devices shall be qualified in accordance with
MIL-PRF-19500.
7
MIL-PRF-19500/313F
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
table IV of
MIL-PRF-19500)
*3c
Measurement
JANS level
JANTX and JANTXV levels
Thermal impedance, method 3131 of
MIL-STD-750.
Thermal impedance, method 3131 of
MIL-STD-750.
9
ICBO2, hFE1
Not applicable
10
48 hours minimum
48 hours minimum
11
ICBO2; hFE1;
∆ICBO2 = 100 percent of initial value or 5 nA dc,
whichever is greater. ∆hFE1 = ±15 percent.
ICBO2, hFE1
12
See 4.3.1
240 hours minimum
Subgroups 2 and 3 of table I herein;
∆ICBO2 = 100 percent of initial value or 5 nA dc,
whichever is greater; ∆hFE1 = ±15 percent.
See 4.3.1
80 hours minimum
Subgroup 2 of table I herein;
∆ICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater;
∆hFE1 = ±15 percent.
13
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc; apply
PTMAX = 360 mW.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500 “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B,
subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
8
MIL-PRF-19500/313F
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) and delta
requirements shall be in accordance with group A, subgroup 2 and table III herein. See 4.4.2.2 for JAN, JANTX, and
JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and
JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and table III herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Method
Condition
B4
1037
VCB = 10 V dc.
B5
1027
(Note: If a failure occurs, resubmission shall be at the test conditions of the original
sample.) VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3).
Subgroup
Option 1: 96 hours minimum sample size in accordance with table VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to
achieve TJ = +225°C minimum.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method
Condition
1
1039
Steady-state life: Test condition B, 1,000 hours, VCB = 10 - 30 V dc, power shall be applied
to achieve TJ = +150°C minimum and a minimum power dissipation PD ≥ 75 percent of
maximum rated PT as defined in 1.3 herein.
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hrs for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B, step 2 shall not be required more than once for any single wafer lot.
n = 45, c = 0.
3
1032
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers
(or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each
inspection lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX,
and JANTXV) may be pulled prior to the application of final lead finish.
9
MIL-PRF-19500/313F
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV)
herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with
group A, subgroup 2 and table III herein.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Method
Condition
C2
2036
Test condition E.
C5
3131
See 4.5.7.
C6
1026
1,000 hours at VCB = 10 to 30 V dc; power shall be applied to achieve
TJ = +150°C minimum and a minimum power dissipation PD ≥ 75 percent of maximum
rated PT as defined in 1.3 herein.
Subgroup
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Method
Condition
C2
2036
Test condition E.
C5
3131
See 4.5.7.
Subgroup
C6
Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type
enclosed in the intended package type shall be considered as complying with the requirements for that subgroup.
4.4.4 Group E inspection. Group E inspection shall be performed for qualification or re-qualification only. The tests
specified in table II herein shall be performed to maintain qualification.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Emitter to collector cutoff current. Method of test shall be in accordance with method 3041 of MIL-STD-750,
test condition C, except that all references to the collector and emitter of the transistor under test shall be
interchanged.
4.5.3 Emitter to collector breakdown voltage. Method of test shall be in accordance with method 3011 of
MIL-STD-750, test condition D, except that all references to the collector and emitter of the transistor under test shall
be interchanged.
4.5.4 Forward current transfer ratio (inverted connection). Method of test shall be in accordance with method 3076
of MIL-STD-750, except that all references to the collector and emitter of the transistor under test shall be
interchanged. Then hFE(inv ) = I E /I B.
4.5.5 Emitter to collector offset voltage. The transistor shall be tested in the circuit on figure 5. The base current
shall be adjusted to the specified value. The voltage between the emitter and collector shall be measured using a
voltmeter with an input impedance high enough that halving it does not change the measured value within the
required accuracy of the measurement.
10
MIL-PRF-19500/313F
4.5.6 Small signal emitter to collector on-state resistance. The transistor shall be tested in the circuit of figure 6.
The base current shall be adjusted to the specified value and an ac sinusoidal signal current, Ie, of the specified rms
value shall be applied between the emitter and collector. The rms voltage Vec, between the emitter and collector shall
be measured using an ac voltmeter with an input impedance high enough that halving it does not change the
measured value within the required accuracy of the measurement. The small signal emitter to collector on-state
resistance shall then be determined as follows:
rec(on) = Vec /IE
Where Vec is the rms voltage between the emitter and collector.
4.5.7 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131
of MIL-STD-750. The following details shall apply:
a. Collector current magnitude during power application shall be 30 mA dc.
b. Collector emitter voltage magnitude shall be 10 V dc.
c. Reference temperature measuring point shall be the case.
d. Reference point temperature shall be selected with +25°C ≤ TR ≤ +75°C and recorded before the test is
started.
e. Mounting arrangement shall be with heat sink to case.
f. Maximum limit for RθJC shall be 0.25°C/mW.
11
MIL-PRF-19500/313F
TABLE I. Group A inspection.
Inspection 1/
Method
MIL-STD-750
Conditions
Symbol
Limits
Min
Unit
Max
Subgroup 1 2/
Visual and mechanical
examination 3/
2071
n = 45 devices, c = 0
*Solderability 3/ 4/
2026
n = 15 leads, c = 0
*Resistance to solvents
3/ 4/ 5/
1022
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic seal 4/
Fine leak
Gross leak
1071
n = 22 devices, c = 0
Group A, subgroup 2
Electrical
measurements 4/
Bond strength 3/ 4/
2037
Precondition TA = +250°C at
t = 24 hrs or TA = +300°C at
t = 2 hrs n = 11 wires, c = 0
Decap internal visual design
verification 4/
2075
n = 4, c = 0.
3011
Bias condition D; I C = 10 mA dc;
pulsed (see 4.5.1)
Subgroup 2
*Breakdown voltage collector to
emitter
V(BR)CEO
2N2432, 2N2432UB
2N2432A
*Collector to base cutoff current
30
45
3036
2N2432, 2N2432UB
2N2432A
*Breakdown voltage emitter to
collector
Bias condition D
ICBO1
VCB = 30 V dc
VCB = 45 V dc
3011
100
100
Bias condition D; IE = 100 µA dc;
IE = 0 (see 4.5.3)
Breakdown voltage emitter to
collector
3011
Bias condition D; IE = 10 mA dc;
IB = 0; pulsed (see 4.5.1and 4.5.3)
*Collector to base cutoff current
3036
Bias condition D
VCB = 25 V dc
VCB = 40 V dc
V(BR)EC02
15
18
V dc
V dc
10
V dc
ICBO2
10
10
See footnotes at end of table.
12
µA dc
µA dc
V(BR)ECO1
2N2432, 2N2432UB
2N2432A
2N2432, 2N2432UB
2N2432A
V dc
V dc
nA dc
nA dc
MIL-PRF-19500/313F
TABLE I. Group A inspection - Continued.
Inspection 1/
Method
MIL-STD-750
Conditions
Symbol
Limits
Min
Unit
Max
Subgroup 2 - Continued
*Collector to emitter cutoff
current
2N2432, 2N2432UB
2N2432A
Emitter to collector cutoff
current
3041
3041
Bias condition C
ICES1
VCB = 25 V dc
VCB = 40 V dc
Bias condition C; VEC = 15 V dc;
VBC = 0; (see 4.5.2)
IECS1
10
10
2
nA dc
nA dc
nA dc
2
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = 15 V dc
IEBO
Forward-current transfer ratio
3076
VCE = 5 V dc; IC = 10 µA dc
hFE1
30
Forward-current transfer ratio
3076
VCE = 5 V dc; IC = 1 mA dc
hFE2
80
*Forward-current transfer ratio
(inverted connection)
3076
VCE = 5 V dc; IC = 0.2 mA dc;
(see 4.5.4)
hFE(inv)1
2N2432, 2N2432UB
2N2432A
Saturation voltage and
resistance
400
2
3
3071
*Emitter to collector offset
voltage
IC = 10 V dc; IB = 0.5 mA dc
VCE(sat)
IB = 200 µA dc; IE = 0 mA dc
(see 4.5.5 and figure 6)
VEC(ofs)1
2N2432, 2N2432UB
2N2432A
*Emitter to collector offset
voltage
IB = 1 mA dc; IE = 0 mA dc
(see 4.5.5 and figure 6)
0.15
V dc
0.5
0.4
mV dc
mV dc
1.0
0.7
mV dc
mV dc
250
250
nA dc
nA dc
200
nA dc
VEC(ofs)2
2N2432, 2N2432UB
2N2432A
Subgroup 3
High-temperature operation:
*Collector to emitter cutoff
current
TA = +125°C
3041
2N2432, 2N2432UB
2N2432A
Emitter to collector cutoff
current
Low-temperature operation:
Bias condition C
ICES2
VCB = 25 V dc
VCB = 40 V dc
3041
Bias condition C; VEC = 15 V dc;
VBC = 0 (see 4.5.2)
TA = -55°C
See footnotes at end of table.
13
IECS2
MIL-PRF-19500/313F
TABLE I. Group A inspection - Continued.
Inspection 1/
Method
MIL-STD-750
Conditions
Symbol
Limits
Min
Unit
Max
Subgroup 3 - Continued
Forward-current transfer ratio
3076
VCE = 5 V dc; IC = 10 µA dc;
pulsed (see 4.5.1)
hFE3
10
Forward-current transfer ratio
3076
VCE = 5 V dc; IC = 1 mA dc;
pulsed (see 4.5.1)
hFE4
25
Forward-current transfer ratio
(inverted connection)
3076
VCE = 5 V dc; IE = 200 µA dc;
pulsed (see 4.5.1 and 4.5.4)
hFE(inv)2
1.8
Subgroup 4
*Small signal emitter collector on
state resistance
IB = 1 mA dc; IE = 0;
Ie = 100 µA ac (rms); f = 1 kHz
(see 4.5.6 and figure 6)
rec(on)
2N2432, 2N2432UB
2N2432A
20
15
2
Ω
Ω
Small-signal short-circuit forwardcurrent transfer ratio
3306
VCE = 5 V dc; IC = 1 mA dc;
f = 20 MHz
|hfe |
10
Open circuit output capacitance
3236
VCB = 0; IE = 0;
100 kHz ≤ f ≤ 1 MHz
Cobo
12.0
pF
Input capacitance
3240
VEB = 0 V dc; IC = 0;
100 kHz ≤ f ≤ 1 MHz
Cibo
12.0
pF
Subgroups 5 and 6
Not applicable
lSubgroup 7 4/
1/
2/
3/
4/
5/
For sampling plan see MIL-PRF-19500.
For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure
in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
Separate samples may be used.
Not required for JANS devices.
Not required for laser marked devices.
14
MIL-PRF-19500/313F
TABLE II. Group E inspection (all quality levels) - for qualification only.
MIL-STD-750
Inspection
Method
Qualification
Conditions
Subgroup 1
45 devices
c=0
Temperature cycling
(air to air)
1051
Hermetic seal
1071
Test condition C, 500 cycles
Fine leak
Gross leak
Electrical measurements
See group A, subgroup 2 and table III herein.
Subgroup 2
Intermittent life
45 devices
c=0
1037
VCB = 10 V dc, 6,000 cycles, forced air cooling allowed
on cooling cycle only.
See group A, subgroup 2 and table III herein.
Electrical measurements
Subgroup 3
Not applicable
Subgroup 4
Thermal resistance
3131
RθJC see 4.5.7.
22 devices
c=0
Subgroup 5, 6, and 7
Not applicable
45 devices
c=0
*Subgroup 8
Reverse stability
1033
Condition A for devices ≥ 400 V dc.
Condition B for devices < 400 V dc.
15
MIL-PRF-19500/313F
TABLE III. Groups B and C delta measurements. 1/ 2/ 3/ 4/
Step
1
Inspection
Collector-base cutoff
current
Method
MIL-STD-750
Conditions
3036
Bias condition D
2N2432, 2N2432UB
2N2432A
2
1/
2/
3/
4/
Forward current transfer
ratio
Symbol
Limit
∆ICB02
100 percent of initial value or
5 nA dc, whichever is greater.
∆hFE2
±25 percent change from
initial reading.
Unit
VCB = 25 V dc
VCB = 40 V dc
3076
VCE = 10 V dc;
IC = 1.0 mA dc;
pulsed see 4.5.1
Devices which exceed the group A limits for this test shall not be accepted.
The delta measurements for group B, table VIa (JANS) of MIL-PRF-19500 are as follows:
Subgroup 3, 5, and 6; see table III herein, steps 1 and 2.
The delta measurements for 4.4.2.2 herein (group B, JAN, JANTX, and JANTXV) are as follows: Steps 1 and
2 of table III shall be performed after each step in 4.4.2.2 herein.
The delta measurements for group C, table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table III
herein, steps 1 and 2 for JANS only.
16
MIL-PRF-19500/313F
FIGURE 5. Emitter to collector offset voltage test circuit.
FIGURE 6. Small-signal emitter-collector on-state resistance test circuit.
17
MIL-PRF-19500/313F
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact
the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or
within the Military Department's System Command. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a.
Title, number, and date of this specification.
b.
Issue of DoDISS to be cited in the solicitation and, if required, the specific issue of individual documents
referenced (see 2.2).
c.
Lead finish (see 3.4.1).
d.
Type designation and product assurance level.
e.
Packaging requirements (see 5.1).
6.3 Suppliers of JANHC die. The qualified JANC suppliers with the applicable letter version (example,
JANHCA2N2432 or JANHCA2N2432A) will be identified on the QML.
JANC ordering information
PIN
2N2432
2N2432A
Manufacturer
12498
43611
JANHCA2N2432
JANHCA2N2432A
JANHCB2N2432
JANHCB2N2432A
2N2432
2N2432A
JANKCB2N2432
JANKCB2N2432A
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such
products have actually been so listed by that date. The attention of the contractors is called to these requirements,
and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government
tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered
by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center,
Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000.
18
MIL-PRF-19500/313F
6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-4515-01)
Review activities:
Army - MI
Navy - AS, MC
Air Force - 19
19
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/313F
I RECOMMEND A CHANGE:
2. DOCUMENT DATE
27 February 2002
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER TYPES 2N2432, 2N2432A,
2N2432UB, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC.
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAC
P.O. Box 3990
Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
b. TELEPHONE
Commercial
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Previous editions are obsolete
WHS/DIOR, Feb 99