ETC JANTX2N2945A

INCH POUND
The documentation and process conversion measures necessary
to comply with this revision shall be completed by 30 September 1999
MIL-PRF-19500/382C
28 July 1999
SUPERSEDING
MIL-S-19500/382B
4 October 1993
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER
TYPE 2N2944A, 2N2945A, AND 2N2946A
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for low-power, high-speed chopper, PNP, silicon transistors.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimension. See figure 1 (similar to T0-46).
1.3 Maximum ratings.
Types
PT 1/
TA = +25C
mW
VEBO
VCBO
VCEO
VECO
IC
TJ and TSTG
V dc
V dc
V dc
V dc
mA dc
C
2N2944A
400
-15
-15
2N2945A
400
-25
-25
2N2946A
400
-40
-40
1/ Derate linearly 2.3 mW/C above TA = +25C.
-10
-20
-35
-10
-20
-35
-100
-100
-100
-65 to +200
-65 to +200
-65 to +200
1.4 Primary electrical characteristis.
Limits
2N2944A
Min
Max
hFE (inv)1
VEC = -0.5 V dc
IB = -200 A dc
hFE1
VCE = -0.5 V dc
IC = -1 mA dc
100
2N2945A
70
2N2946A
2N2944A
50
50
2N2945A
30
rec (on)2
IB = -1 mA dc
Ie = 100 A ac(rms)
IE = 0; f = 1 kHz
2N2946A
2N2944A
ohms
2N2945A
ohms
2N2946A
ohms
pF
4
6
8
6
20
hfe f = 1 MHz
VCE = -6 V dc
IC = -1 mA dc
VEC (ofs)
IB = -200 A dc
IE = 0
Limits
Min
Max
Cibo
VEB = -6 V dc
IC = 0
100 kHz f
1 MHz
IR = -1.0 mA dc
IE = 0
2N2944A
mV dc
2N2945A
mV dc
2N2946A
mV dc
2N2944A
mV dc
2N2945A
mV dc
2N2946A
mV dc
-0.3
-0.5
-0.8
-0.6
-1.0
-2.0
2N2944A
2N2945A
Cobo
VCB = -6 V dc
IE = 0
100 kHz f 1 MHz
2N2946A
pF
15
55
10
55
5
55
10
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should
be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, by
using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A.
FSC 5961
Approved for public release; distribution is unlimited.
MIL-PRF-19500/382C
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not
include documents cited in other sections of this specification or recommended for additional information or as examples. While
every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified
requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Performance Specification Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense
Automated Printing Sevice, 700 Robbins Avenue, Building 4D (DPM-DODSSP), Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for
listing on the applicable qualified products list before contract award (see 4.2 and 6.4).
3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in
MIL-PRF-19500, and as follows:
V(BR)ECO - - - Breakdown voltage, emitter to collector, with base open-circuited.
hFE (inv) - - Forward-current transfer ratio except that the collector and emitter shall be interchanged, i.e., IE /IB .
Ie - - - - - -
Emitter current (rms).
rec (on)- - -
Small-signal emitter-collector on-state resistance.
VEC (ofs) - - Emitter to collector offset voltage, i.e., open-circuit voltage between emitter collector when the base-collector junction
is forward-biased.
Vec - - - - -
Emitter to collector voltage (rms).
3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500, and herein.
3.4.1 Lead finish. Unless otherwise specified herein, lead finish shall be solderable in accordance with MIL-PRF-19500,
MIL-STD-750, and herein.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
2
MIL-PRF-19500/382C
Symbol
Millimeter
Min
Max
4.52
4.95
1.65
2.16
5.31
5.84
Note
CD
CH
HD
Inches
Min
Max
.178
.195
.065
.085
.209
.230
LC
LD
LL
LU
.707 TP
.021
.500
.016
.019
1.80 TP
.53
12.70
.41
.48
4
2, 6
6
3, 6
L1
.050
1.27
L2
.250
TL
TW
P
Q
r
.028
.036
.100
6.35
.048
.046
.040
.007
45 TP
.71
.91
2.54
1.22
1.17
1.02
.18
45 TP
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than 0.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane 0.054 inch (1.37 mm) +0.001 inch (0.03 mm) -0.000 inch (0.00 mm) below seating plane shall
be within 0.007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge.
7. Symbol LU applies between L1 and L2. Dimensions LD applies between L2 and LL minimum. Lead diameter shall not
exceed 0.042 inch (1.07 mm) within L1 and beyond LL minimum.
8. Lead designation, shall be as follows:
1 - Emitter; 2 - Base; 3 - Collector
9. Collector is electrically connected to case.
10. Beyond r maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).
11. Symbol r applied to both inside corners of tab.
12. In accordance with ANSI Y14.5M, diameters are equivalent to x symbology.
FIGURE 1. Physical dimensions (similar to T0-46).
3
MIL-PRF-19500/382C
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.3 Screening (JANS, JAN, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV)
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the
limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
9
11
12
13
Measurement
JANS
JAN, JANTX and JANTXV
ICBO1 and hFE (inv)1
ICBO1 ; hFE (inv)1 ;
ICBO1 = 100 percent of initial value or 0.2 nA
dc for 2N2944 and 2N2945, 0.5 nA dc
for 2N2946
hFE (inv)1 = 25% of initial value.
See 4.3.1
Subgroups 2 and 3 of table I herein;
ICBO1 = 100 percent of initial value or
0.2 nA dc for 2N2944 and 2N2945, 0.5 nA dc
for 2N2946; hFE (inv)1 = 25% of initial value.
N/A
ICBO1 and hFE (inv)1
See 4.3.1
Subgroups 2 of table I herein;
ICBO1 = 100 percent of initial value or
0.2 nA dc for 2N2944A and 2N2945A, 0.5 nA dc
for 2N2946A; hFE (inv)1 = 25% of initial value.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in the general
requirements of MIL-STD-750, paragraph 4.5;
PT = +400 mW
2N2944A:
2N2945A:
2N2946A:
VCB = -8 V dc
VCB = -16 V dc
VCB = -28 V dc
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
VIa (JANS) of 19500 and 4.4.2.1 herein. Electrical measurements (end-points) requirements shall be in accordance with group A,
subgroup 2 herein. Delta requirements shall be in accordance with 4.5.6 herein. See 4.4.2.2 herein for JAN, JANTX, and JANTXV
group B testing. Electrical measurements (end-points) requirements shall be in accordance with group A, subgroup 2 herein. Delta
requirements shall be in accordance with 4.5.6 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
B3
B4
Method
2037
1037
B5
1027
Condition
Condition A
PT = 400 mW; TA = room ambient as defined in the general requirements of MIL-STD-750, section 4.5;
ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink or forced air cooling on the devices shall
be permitted. VCB = -8 V dc (2N2944A); VCB = -16 V dc (2N2945A); VCB = -28 V dc (2N2946A).
TA = 125C 25C; for 96 hours; PT = 400 mW at 100C or adjusted as required by the chosen
TA to give an average lot TJ = 275C. Marking legibility requirements shall not apply; VCB = -8 V dc
(2N2944A); VCB = -16 V dc (2N2945A); VCB = -28 V dc (2N2946A).
4
MIL-PRF-19500/382C
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). 1/ Electrical endpoints shall be in accordance with Group A, subgroup
2, herein.
Step
1
Method
1039
2
1039
3
1032
Condition
Steady-state life: Test condition B, 340 hours, VCB = -8 V dc (2N2944A), VCB = -16 V dc (2N2945A),
VCB = -28 V dc (2N2946A), adjust to achieve TJ = 150C min. No heat sink on the device shall be
permitted.
n = 45 devices, c = 0.
The steady state life test of step 1 shall be extended to 1000 hours for each die design. Samples shall be
selected from a wafer lot ever twelve months of wafer production, however, Group B shall not be required
more than once for any single wafer lot. n = 45, c = 0.
High-temperature life (non-operating), TA = +200C. n = 22, c = 0.
1/ Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at
double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot”
option is exercised, the failed assembly lot shall be scrapped.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in
the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance
inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples
for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the
application of final lead finish.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup
testing in table VII of MIL-PRF-19500, and 4.4.3.1 (JANS), and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing.
Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.6 herein.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup
C2
C6
Method
2036
1037
Conditions
Test condition E.
Intermittent operation life (sampling plan); VCB = -8 V dc (2N2944A), VCB = -16 V dc (2N2945A),
VCB = -28 V dc (2N2946A) TJ = +150C. No heat sink or forced-air cooling on the devices.
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
C2
C6
Method
2036
1037
Conditions
Test condition E.
Not applicable
4.4.3.3 Group C inspection sample selection. Samples for subgroups in group C shall be chosen at random from any lot
containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A
tests for conformance inspection. Testing of a group using a single device type enclosed in the intended package type shall be
considered as complying with the requirements for that subgroup.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Input capacitance. This test shall be conducted in accordance with MIL-STD-750, method 3240, except the output
capacitor shall be omitted.
4.5.2 Emitter to collector breakdown voltage. Method of test shall be in accordance with method 3011 of MIL-STD-750,
condition D, except that all references to the collector and the emitter of the transistor shall be interchanged.
4.5.3 Forward-current transfer ratio (inverted connection). Method of test shall be in accordance with method 3076 of MIL-STD750, except that all references to the collector and the emitter of the transistor shall be interchanged. Then:
hFE (inv) = IE / IB
4.5.4 Emitter to collector offset voltage. The transistor shall be tested in the circuit of figure 2. The base current shall be
adjusted to the specified value. The voltage between the emitter and collector shall then be measured using a voltmeter with an
input impedance high enough that halving it does not change the measured value within the required accuracy of the measurement.
5
MIL-PRF-19500/382C
4.5.5 Small-signal emitter-collector on-state resistance. The transistor shall be tested in the circuit of figure 3. The base current
shall be adjusted to the specified value and an ac sinusoidal signal current, Ie’ , of the specified rms value shall be applied between
the emitter and collector. The rms voltage, Vec’ , between the emitter and collector shall be measured using an ac voltmeter with an
input impedance high enough that halving it does not change the measured value within the required accuracy of the measurement.
The small-signal emitter-collector on-state resistance shall then be determined as follows:
rec (on) = Vec / Ie
where Vec is the rms voltage between the emitter and collector.
4.5.6 Delta requirements. Delta requirements shall be as specified below:
Step
1
2
Inspection
Collector to base
cutoff current
2N2944A
2N2945A
2N2946A
Forward-current
transfer ratio
(inverted connection)
Method
3036
3076
MIL-STD-750
Conditions
Bias condition D:
IE = 0
VCE = -15 V dc
VCE = -25 V dc
VCE = -40 V dc
VEC = -0.5 V dc;
IB = 200 A dc;
(see 4.5.3)
Symbol
ICBO1
hFE(inv)1
Limit
Min
Max
100 percent of
initial value
25 percent of
initial value
1/ The electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 5, see 4.5.6 herein, steps 1 and 2.
2/ The electrical measurements for table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroups 3 and 6, see 4.5.6 herein, step 2.
3/ The electrical measurements for table VII of MIL-PRF-19500 are as follows:
a. Subgroup 6, steps 1 and 2 (JANS) and 2 (JAN, JANTX and JANTXV).
6
Unit
MIL-PRF-19500/382C
Inspection 1/
Method
TABLE I. Group A inspection.
MIL-STD-750
Conditions
Symbol
Limits
Min
Unit
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to 3/ 4/ 5/
solvent
1022
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = o
1071
n = 22 devices, c = 0
Heremetic seal 4/
Fine leak
Gross leak
Electrical measurements 4/
2037
Group A, subgroup 2 herein
Precondition TA = +250C at t =
24 hrs or TA = +300C at t = 2
hrs, n = 11 wires, c = 0
Bond strength 3/ 4/
Subgroup 2
Bias condition D;
IC = -10 A dc
Breakdown voltage collector to
emitter
2N2944A
2N2945A
2N2946A
3011
Collector to base
cutoff current
2N2944A
2N2945A
2N2946A
3036
Emitter to base
cutoff current
Breakdown voltage, emitter to
collector
2N2944A
2N2945A
2N2946A
3061
Bias condition D;
3011
Bias condition B; IE = -10 A dc;
IB = 0; (see 4.5.2)
Collector to base cutoff current
2N2944A
2N2945A
2N2946A
3036
Emitter to base cutoff current
2N2944A
2N2945A
2N2946A
3061
V(BR)CEO
-10
-20
-35
Bias condition D; IC = -10 A dc
V dc
V dc
V dc
ICBO1
VCB = -15 V dc
VCB = -25 V dc
VCB = -40 V dc
IEBO1
10
10
10
A
10
A
Bias condition D;
VCB = -15 V dc
VCB = -25 V dc
VCB = -40 V dc
ICBO2
Bias condition D;
VEB = -15 V dc
VEB = -25 V dc
VEB = -40 V dc
IEBO2
7
dc
V(BR)ECO
-10
-20
-35
See footnote at the end of table.
dc
dc
A dc
A
V dc
V dc
V dc
-0.1
-0.2
-0.5
nA dc
nA dc
nA dc
-0.1
-0.2
-0.5
nA dc
nA dc
nA dc
MIL-PRF-19500/382C
Inspection 1/
TABLE I. Group A inspection. -Continued
MIL-STD-750
Symbol
Method
Conditions
Limits
Min
Unit
Max
Subgroup 2 - continued.
Forward-current transfer ratio
3076
VCE = -0.5 V dc; IC = -1.0
mA dc
hFE1
2N2944A
2N2945A
2N2946A
100
70
50
Forward-current transfer ratio
(inverted connection)
3076
VEC = -0.5 V dc;
IB = -200 A dc; (see 4.5.3)
hFE (inv)1
2N2944A
2N2945A
2N2946A
50
30
20
Emitter to collector offset
voltage
2N2944A
2N2945A
2N2946A
---
Emitter to collector offset
voltage
2N2944A
2N2945A
2N2946A
---
Emitter to collector offset
voltage
2N2944A
2N2945A
2N2946A
---
IB = -200 A dc; IE = 0;
(see 4.5.4 and figure 2).
IB = -1 mA dc; IE = 0;
(see 4.5.4 and figure 2).
IB = -2 mA dc; IE = 0;
(see 4.5.4 and figure 2).
VEC (ofs)1
-0.3
-0.5
-0.8
mV dc
mV dc
mV dc
-0.6
-1.0
-2.0
mV dc
mV dc
mV dc
-1.0
-1.6
-2.5
mV dc
mV dc
mV dc
-10
-20
-25
nA dc
nA dc
nA dc
-10
-15
-20
nA dc
nA dc
nA dc
VEC (ofs)2
VEC (ofs)3
Subgroup 3
TA = +100C
High-temperature operation:
Collector to base cutoff current
2N2944A
2N2945A
2N2946A
3036
Emitter to base cutoff current
2N2944A
2N2945A
2N2946A
3061
Low-temperature operation:
Forward-current
transfer ratio
2N2944A
2N2945A
2N2946A
3076
Bias condition D; IC = 0
VCB = -15 V dc
VCB = -25 V dc
VCB = -40 V dc
ICBO3
Bias condition D; IC = 0
VCB = -15 V dc
VCB = -25 V dc
VCB = -40 V dc
IEBO3
TA = -55C
VCE = -0.5 V dc;
IC = -1 mA dc
hFE2
35
25
20
See footnote at the end of table.
8
MIL-PRF-19500/382C
Inspection 1/
TABLE I. Group A inspection - Continued.
MIL-STD-750
Symbol
Method
Conditions
Limits
Min
Unit
Max
Subgroup 3 -Continued
Forward-current
transfer ratio
(inverted connection)
2N2944A
2N2945A
2N2946A
3076
VEC = -0.5 V dc;
IB = -200 A dc
(see 4.5.3)
hFE (inv)2
IB = -100 A dc; IE = 0;
Ie = 100 A ac (rms)
f = 1 kHz (see 4.5.5 and
figure 3)
rec (on)1
25
15
10
Subgroup 4
Small-signal emitter- collector
on-state resistance
2N2944A
2N2945A
2N2946A
Small-signal emitter- collector
on-state resistance
---
IB = -1 A dc; IE = 0;
Ie = 100 A ac (rms)
f = 1 kHz
(see 4.5.4 and figure 2).
---
4
6
8
rec (on)2
2N2944A
2N2945A
2N2946A
Magnitude of commonemitter
small-signal short-circuit
forward-current transfer ratio
2N2944A
2N2945A
2N2946A
10
12
14
hfe
VCE = -6 V dc;
IC = -1 mA dc;
f = 1 MHz
15
10
5
55
55
55
Open circuit output
capacitance
3236
VCB = -6 V dc; IE = 0;
100 kHz f 1 MHz
Cobo
10
pF
Input capacitance
(output open-circuited)
3240
VEB = -6 V dc; IC = 0;
100 kHz f 1 MHz
(see 4.5.1)
Cibo
6.0
pF
Delay time
3251
td
50
ns
Rise time
3251
tr
100
ns
Storage time
3251
ts
350
ns
Fall time
3251
Test condition B
(see figure 4)
Test condition B
(see figure 4)
Test condition B
(see figure 4)
Test condition B
(see figure 4)
tf
100
ns
Pulse response:
Subgroups 5, 6, and 7
Not applicable
1/
2/
3/
4/
5/
For sampling plan, see MIL-PRF-19500.
For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests.
Separate samples may be used.
Not required for JANS.
Not required for laser marked devices.
9
MIL-PRF-19500/382C
FIGURE 2. Emitter to collector offset voltage test circuit.
FIGURE 3. Emitter to collector offset voltage test circuit.
10
MIL-PRF-19500/382C
NOTES:
1. The rise time (tr ) and fall time (tf ) of the applied pulse shall be 10 ns, duty cycle 2%. The
input pulse width shall be 500 ns.
3. Output monitored with an oscilloscope with the following characteristics:
Zin 1 M, tr 1 ns.
FIGURE 4. Pulse response test circuit.
11
MIL-PRF-19500/382C
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2).
When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging
activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points'
packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command.
Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CDROM products, or by contacting the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced
(see 2.2.1).
b. Lead finish (see 3.3.1).
c. Type designation and product assurance level.
d. Packaging requirements (see 5.1).
6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extent of the changes.
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not such products have actually been
so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to
have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be
awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of
products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
CONCLUDING MATERIAL
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA -CC
(Project 5961-1845)
Review activities:
Army - AV
Air Force - 19, 99
12
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
2. DOCUMENT DATE (YYMMDD)
MIL-S-19500/382C
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPE 2N2944A, 2N2945A, AND 2N2946A
JAN, JANTX, JANTXV, AND JANS
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
(YYMMDD)
(1) Commercial
(2) DSN
(If applicable)
(3) E-mail
8. PREPARING ACTIVITY
a. NAME
Alan Barone
c. ADDRESS (Include Zip Code)
Defense Supply Center Columbus,
DSCC-VAC, Columbus, OH 43216
DD Form 1426, FEB 1999
b. TELEPHONE (Include Area Code)
(1) Commercial
(2) DSN
(614) 692-0510
850-0510
(3) E-mail
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman Road, Suite 2533
Fort Belvoir, Vaginia 22060-6888
Telephone (703) 767-6888 DSN 427-6888
Previous editions are obsolete
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