1N4153, Silicon Switching Diode 1N4150 Applications DO-35 Glass Package 1N4153-1 Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded BKC's Sigma Bond™ plating 1.0" for problem free solderability 25.4 mm (Min.) LL-34/35 MELF SMD available Full approval to Mil-S-19500/337 Available up to JANTXV-1 levels "S" level screening available to SCDs Maximum Ratings Peak Inverse Voltage Average Rectified Current Continuous Forward Current Peak Surge Current (tpeak = 1 Sec.) BKC Power Dissipation TL = 50 oC, L = 3/8" from body L ea dDi a. 0 .0 18-0 .0 22" 0 .458-0 .558m m Length Dia. 0.120-.200" 3.05-5.08- m 0.06-0.09" Symbol PIV IAvg IFdc Ipeak Ptot Operating and Storage Temperature Range Symbol Forward Voltage @ IF = 100 µA VF Vf Vf Forward Voltage @ IF = 250 µA VF Forward Voltage @ IF = 1.0 mA VF Vf Forward Voltage @ IF = 2.0 mA VF Vf VF Forward Voltage @ IF = 10 mA Forward Voltage @ IF = 20 mA VF Reverse Leakage Current @ VR = 50 V IR PIV Breakdown Voltage @ IR = 5.0 µA 1.53-2.28m m Value 75 (Min.) 150 300 0.25 500 TOp & St Electrical Characteristics @ 25 oC* m Minimum 0.49 0.53 0.59 0.62 0.70 0.74 Unit Volts mAmps mAmps Amp mWatts -65 to +200 o Maximum 0.55 0.59 0.67 0.70 0.81 0.88 Unit Volts Volts Volts Volts Volts Volts µA Volts 0.05(50 @ 150 oC) 75 C Capacitance @ VR = 0 V, f = 1mHz CT 2.0 pF Reverse Recovery Time (note 1) Reverse Recovery Time (note 2) trr trr 4.0 2.0 nSecs nSec Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf. *Unless Otherwise Specified Note2: Per Method 4031-A with IF = IR = 10 mA, Rr = 6 Volts, Rl=100 ohms. 6 Lake Street - Lawrence, MA 01841