INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 October 2002. MIL-PRF-19500/368F 8 July 2002 SUPERSEDING MIL-PRF-19500/368E 24 August 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. * 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)), figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions). * 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C. PT (1) TA = +25°C PT (2) TC = +25°C VCBO VEBO VCEO IC TSTG and TOP RθJA W W V dc V dc V dc A dc °C °C/W 2N3439, 2N3439L, 2N3439UA 0.8 5.0 450 7 350 1.0 -65 to +200 325 2N3440, 2N3440L 2N3440UA 0.8 5.0 300 7 250 1.0 -65 to +200 325 Types (1) Derate linearly 5.7 mW/°C for TA > +60°C. (2) Derate linearly 28.6 mW/°C for TC > +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/368F 1.4 Primary electrical characteristics. Min Max hFE2 (1) hFE1 (1) |hfe| Cobo VBE(sat) (1) VCE(sat) VCE = 10 V dc IC = 2 mA dc VCE = 10 V dc IC = 20 mA dc VCE = 10 V dc IC = 10 mA dc f = 5 MHz VCB = 10 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz IC = 50 mA dc IB = 4 mA dc IC = 50 mA dc IB = 4 mA dc pF V dc V dc 30 40 160 3 15 10 1.3 0.5 (1) Pulsed, (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. HANDBOOK DEPARTMENT OF DEFENSE MIL-HDBK-6100 - List of Case Outlines and Dimensions for Discrete Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2 MIL-PRF-19500/368F FIGURE 1. Physical dimensions (similar to TO-5 and TO-39). 3 MIL-PRF-19500/368F Symbol Dimensions Inches Notes Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LD .016 .021 0.41 0.53 3, 10 1.27 11 0.48 4, 10 LL See notes 10, 12, and 13 L1 LU .050 .016 .019 0.41 M .1414 Nom 3.591 Nom 7 N .0707 Nom 1.796 Nom 7 P .100 2.54 5 Q 6 TL .029 .045 0.74 1.14 TW .028 .034 0.71 0.86 9 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane. 4. Measured in the zone .50 inch (1.27 mm) from the seating plane. 5. Variations on dimension CD in this zone shall not exceed .010 inch (0.25 mm). 6. Outline in this zone is not controlled. 7. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, - 0.00 mm) below the seating plane of the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 8. The collector shall be electrically connected to the case. 9. Measured from the maximum diameter of the actual device. 10. All three leads (see 3.4.1). 11. Diameter of leads in this zone is not controlled. 12. For transistor types 2N3439 and 2N3440, L = .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum. 13. For transistor types 2N3439L and 2N3440L, L = 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum. FIGURE 1. Physical dimensions - Continued. 4 MIL-PRF-19500/368F Ltr Inches Millimeters Min Max Min Max A .038 .044 0.97 1.12 C .038 .044 0.97 1.12 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. The physical characteristics of the die thickness are, .006 inch (0.15 mm) to .012 inch (0.30 mm). Metallization, top: Al = 17,500 Å minimum, 20,000 Å nominal. Back: Au = 2,500 Å minimum, 3,000 Å nominal. Bonding pad: B = .004 inch (0.10 mm) by .005 inch (0.13 mm). E = .004 inch (0.10 mm) by .005 inch (0.13 mm). 4. Backside is collector. 5. Requirements in accordance with MIL-PRF-19500 are performed in a TO-5 package. * FIGURE 2. Physical dimensions JANHCA and JANKCA (die) A versions. 5 MIL-PRF-19500/368F 1. 2. 3. 4. 5. 6. Chip size................................. Chip thickness........................ Top metal................................ Back metal............................... .040 x .040 inch ±.002 inch (1.02 mm x 1.02 mm ±0.05 mm). .010 ± .0015 inch nominal (0.254 mm ±0.038 mm). Aluminum 30,000Å minimum, 33,000Å nominal. A. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅminimum,15kÅ/ 5kÅ/10kÅ/10kÅ nominal. B. Gold 2.500Å minimum, 3000Å nominal. Backside................................. Collector. Bonding pad........................... B = .005 x .008 inch (0.127 mm x 0.203 mm). E = .010 x .007 inch (0.254 mm x 0.178 mm). NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 3. Physical dimensions JANHCB and JANKCB (die) B versions. 6 MIL-PRF-19500/368F Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 L3 Dimensions Inches Millimeters Min Max Min Max .061 .075 1.55 1.90 .029 .041 0.74 1.04 .022 .028 0.56 0.71 .075 REF 1.91 REF .006 .022 0.15 0.56 .145 .155 3.68 3.93 .045 .055 1.14 1.39 .0375 BSC .952 BSC .155 3.93 .215 .225 5.46 5.71 .225 5.71 .032 .048 0.81 1.22 .072 .088 1.83 2.23 .003 .007 0.08 0.18 Note 3 5 5 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Dimension "A" controls the overall package thickness. When a window lid is used, dimension "A" must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the drawing. 5. Dimensions "B3" minimum and "L3" minimum and the appropriately castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension "B3" maximum and "L3" maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. * FIGURE 4. Physical dimensions, surface mount (2N3439UA, 2N3440UA) version. 7 MIL-PRF-19500/368F 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, MIL-HDBK-6100 and on figure 1 (similar to TO- 5 and TO-39), figure 2 (JANHCA and JANKCA, (A versions)), figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the next inspection lot to this revision to maintain qualification. 8 MIL-PRF-19500/368F * 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3c Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) 7 Hermetic seal (optional) (1) 9 ICBO1 and hFE1 Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO1; hFE1; ∆ICB01 = 100 percent of initial value or 0.5 µA dc, whichever is greater; ∆hFE1 = ± 15 percent of initial value. ICBO1 and hFE1 12 See 4.3.2, 240 hours minimum See 4.3.2, 80 hours minimum 13 Subgroups 2 and 3 of table I herein; ∆ICB01 = 100 percent of initial value or 200 nA dc, whichever is greater; ∆hFE1 = ± 15 percent of initial value. Subgroup 2 of table I herein; ∆ICB01 = 100 percent of initial value or 200 nA dc, whichever is greater; ∆hFE1 = ± 15 percent of initial value. 14 Optional Optional (1) (1) Hermetic seal test shall be performed in either screen 7 or screen 14. 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be 100 percent probed to ensure the assembled chips will meet the requirements of table I, group A, subgroup 2. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be applied to achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3. 4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with method 3131 MIL-STD-750. Read and record data (ZθJX) shall be supplied to the qualifying activity on one lot (random sample of 500 devices minimum) prior to shipment. The following conditions shall apply. a. IH forward heating current ----------- 250 mA. b. tH heating time -------------------------- 10 ms. c. IM measurement current -------------- 10 mA. d. tMD measurement delay time ------- 30 - 60 µs. e. VCE collector-emitter voltage ------- 10 V dc minimum. The maximum limit for ZθJX under these test conditions are ZθJX (max) = 20 °C/W. 9 MIL-PRF-19500/368F 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in VIa (JANS) of 4.4.2.1 herein. Electrical measurements (end-points) requirements shall be in accordance with table I, group A, subgroup 2 herein. Delta requirements shall be in accordance with 4.5.3 herein. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) requirements shall be in accordance with table I, group A, subgroup 2 herein. Delta requirements shall be in accordance with 4.5.3 herein. * 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 10 V dc, 2,000 cycles. B5 1027 VCB = 10-30 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hrs min, sample size in accordance with table Via of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum. Option 2: 216 hrs min., sample size = 45, c = 0; adjust TA or PD to achieve TJ = +225°C minimum. 10 MIL-PRF-19500/368F 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall be applied to achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0. 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production, however, group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0. Condition 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed table I, group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, group A, subgroup 2 and 4.5.3 herein. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E, except the UA package. C6 1026 1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150°C minimum and a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. * 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C5 3131 See 4.5.2. C6 Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 11 MIL-PRF-19500/368F * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Delta measurements shall be in accordance with the steps of 4.5.3. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following conditions shall apply: a. Collector current magnitude during power application shall be 150 mA dc for RθJC. b. Collector emitter voltage magnitude shall be 10 V dc. c. Reference temperature measuring point shall be the case. d. Reference temperature measuring point shall be +25°C ≤ TR ≤ +35°C. The chosen reference temperature shall be recorded before the test is started. e. Mounting arrangement shall be with heat sink to case for RθJC. Maximum limit shall be RθJC = 35°C/W. * 4.5.3 Delta requirements. Delta requirements shall be as specified below: Step Inspection Method 1 Collector-base cutoff current 3036 2 Forward current transfer ratio 3076 MIL-STD-750 Conditions Bias condition D, VCB = 360 V dc for 2N3439, 2N3439L, 2N3439UA VCB = 250 V dc for 2N3440, 2N3440L, 2N3440UA VCE = 10 V dc; IC = 20 mA dc; pulsed see 4.5.1 Symbol ∆ICB01 (1) 100 percent of initial value or 200 nA dc, whichever is greater. ∆hFE1 (1) ±15 percent change from initial reading. (1) Devices which exceed the table I, group A limits for this test shall not be accepted. 12 Unit MIL-PRF-19500/368F * TABLE I. Group A inspection. MIL-STD-750 Inspection 1/ Symbol Conditions Limit Min Unit Max Subgroup 1 2/ Visual and mechanical 3/ examination 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to 3/ 4/ 5/ solvent 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic seal 4/ 1071 n = 22 devices, c = 0 Fine leak Gross leak Electrical measurements 4/ Group A, subgroup 2 Bond strength 3/ 4/ 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs, n = 11 wires, c = 0 Decap internal visual (design verification) 4/ 2075 n = 4 devices, c = 0 Emitter to base cutoff current 3061 Bias condition D, VEB = 7 V dc IEBO1 10 µA dc Collector to emitter cutoff 3041 Bias condition D ICEO 2 µA dc ICEX 5 µA dc ICBO1 2 µA dc Subgroup 2 2N3439, 2N3439L, 2N3439UA 2N3440, 2N3440L, 2N3440UA Collector to emitter cutoff current VCE = 300 V dc VCE = 200 V dc 3041 VCE = 450 V dc VCE = 300 V dc 2N3439, 2N3439L, 2N3439UA 2N3440, 2N3440L, 2N3440UA Collector to base cutoff current 2N3439, 2N3439L, 2N3439UA 2N3440, 2N3440L, 2N3440UA Bias condition A, VBE = -1.5 V dc 3036 Bias condition D VCB = 360 V dc VCB = 250 V dc See footnotes at end of table. 13 MIL-PRF-19500/368F * TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued Collector to base cutoff current 3036 2N3439, 2N3439L, 2N3439UA 2N3440, 2N3440L, 2N3440UA Bias condition D ICBO2 5 µA dc VCB = 450 V dc VCB = 300 V dc Base emitter voltage (nonsaturated) 3066 Test condition A, pulsed (see 4.5.1), IC = 50 mA dc, IB = 4 mA dc VBE(sat) 1.3 V dc Collector to emitter voltage (saturated) 3071 Pulsed (see 4.5.1), IC = 50 mA dc, IB = 4 mA dc VCE(sat) 0.5 V dc Forward-current transfer ratio 3076 Pulsed (see 4.5.1), VCE = 10 V dc, IC = 20 mA hFE1 40 Forward-current transfer ratio 3076 Pulsed (see 4.5.1), VCE = 10 V dc, IC = 2 mA hFE2 30 Forward-current transfer ratio 3076 Pulsed (see 4.5.1), VCE = 10 V dc, IC = 0.2 mA hFE3 10 160 Subgroup 3 TA = +150°C High temperature operation: Collector to emitter cutoff current 3036 ICB03 100 µA dc VCB = 360 V dc VCB = 250 V dc 2N3439, 2N3439L, 2N3439UA 2N3440, 2N3440L, 2N3440UA Low temperature operation: Forward-current transfer ratio Bias condition D TA = -55°C 3076 VCE = 10 V dc, IC = 20 mA dc, pulsed (see 4.5.1) 3251 Test condition A hFE4 15 Subgroup 4 Pulse response: Turn-on time VCC = 200 V dc, IC = 20 mA dc, IB1 = 2 mA dc, see figure 5 ton 1 µs Turn-off time VCC = 200 V dc, IC = 20 mA dc, IB1 = -IB2 = 2 mA dc, see figure 5 toff 10 µs See footnotes at end of table. 14 MIL-PRF-19500/368F * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Unit Min Max 3 15 Subgroup 4 - Continued Magnitude of common- emitter small-signal short-circuit forwardcurrent transfer ratio 3306 VCE = 10 V dc, IC = 10 mA dc, f = 5 MHz |hfe| Open capacitance input open circuited 3236 VCB = 10 V dc, IE = 0, 100 kHz ≤ f ≤ 1 MH Cobo Small-signal short- circuit forwardcurrent transfer ratio 3206 VCE = 10 V dc, IC = 5 mA, f = 1 kHz hfe Input capacitance (output open circuited) 3240 VCB = 5 V dc, IE = 0, 100 kHz ≤ f ≤ 1 MHz Cibo 3051 (See figure 6) TC = +25°C, 1 cycle, t = 1.0 s. 10 pF 25 75 Subgroup 5 Safe operating area (continuous dc) Test 1 VCE = 5 V dc, IC = 1 A dc Test 2 Only 2N3439, 2N3439L, 2N3439UA VCE = 350 V dc, IC = 14 mA dc Test 3 VCE = 250 V dc, IC = 20 mA dc Only 2N3440, 2N3440L, 2N3440UA See table I, subgroup 2 and 4.5.3 herein. Electrical measurements Breakdown voltage, collector to emitter 3011 IC = 10 mA, RBB1 = 470 ohms VBB1 = 6 V, L = 25 mH minimum f = 30 to 60 Hz 2N3439, 2N3439L, 2N3439UA 2N3440, 2N3440L, 2N3440UA 1/ 2/ 3/ 4/ 5/ V dc VBR(CEO) 350 250 For sampling plan, see MIL-PRF-19500. For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. Separate samples may be used. Not required for JANS. Not required for laser marked devices. 15 MIL-PRF-19500/368F * TABLE II. Group E inspection (all quality levels) - for qualification only. Inspection MIL-STD-750 Method Qualification Conditions Subgroup 1 45 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles Fine leak Gross leak Electrical measurements See table I, group A, subgroup 2. Subgroup 2 Intermittent life 45 devices c=0 1037 Electrical measurements Intermittent operation life: VCB ≥ 10 V dc, 6000 cycles See table I, group A, subgroup 2. Subgroups 3, 4, 5, 6, and 7 Not applicable Subgroup 8 Reverse stability 45 devices c=0 1033 Condition A for devices ≥ 400 V, condition B for devices < 400 V. 16 MIL-PRF-19500/368F NOTES: 1. 2. The rise time (tr) and fall time (tf) of applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, generator source impedance shall be 50 ohms, pulse width = 20 µs. Output sampling oscilloscope: ZIN ≥ 100 kΩ, CIN ≤ 50 pF, and rise time ≤ 1.0 µs. FIGURE 5. Pulse response test circuit. 17 MIL-PRF-19500/368F NOTE: Also applies to the corresponding "L" and "UA" suffix devices. * FIGURE 6. Maximum safe operating graph (continuous dc). 18 MIL-PRF-19500/368F 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. Packaging requirements (see 5.1). d. Lead finish (see 3.4.1). e. Type designation and quality assurance level. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC/VQE, P. O. Box 3990, Columbus, OH 43216-5000. 19 MIL-PRF-19500/368F * 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N3439) will be identified on the QML. PIN Die ordering information Manufacturer 2N3439 33178 JANHCA2N3439 JANKCA2N3439 43611 JANHCB2N3439 JANKCB2N3439 2N3440 JANHCA2N3440 JANKCA2N3440 JANHCB2N3440 JANKCB2N3440 * 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2607) Review activities: Army - AR, MI, SM Navy - AS, MC Air Force - 19, 99 20 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/368F 2. DOCUMENT DATE 8 July 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L, AND 2N3440UA, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus, ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99