KR52S018M/F~ KR52S033M/F SEMICONDUCTOR TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT 500mA POWER LOW DROPOUT REGULATOR E The KR52SXXXM/F is an efficient linear voltage regulator with very low B dropout voltage(Typically 10mV at light loads and 350mV at 500mA) The KR52SXXXM/F can be enabled, or shut down by a CMOS or TTL 1 DIM MILLIMETERS _ 0.2 A 2.9 + 5 B 2 D _ 0.1 0.4 + E F G H I J K L 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 F A Dropout ground current is minimized to help prolong battery life. Other key 1.6+0.2/-0.1 _ 0.05 0.70 + C G compatible signal. When disabled. power consumption drops nearly to zero. G features include reversed battery protechion, current limiting, over temperature 4 D 3 L C shutdown, and low noise performance with an ultra-low-noise option I FEATURES H J J High Output Voltage Accuracy : 1% 1 Low Quiescent Current. : IQ(OFF) =3 1. INPUT 2. GND 3. ON/OFF CONTROL 4. NOISE BYPASS 5. OUTPUT Very Low Ground Current : 4.0mA(IOUT = 300mA) Low Dropout Voltage : 350mV(IOUT=500mA) 5 2 4 3 Built-in ON/OFF control Terminal Built -in Over Current , Over Heat Protection Function TSV Reverse-Battery Protection A K APPLICATIONS B Cellular telephones and battery-powered equipment J D C Laptop, notebook, and palmtop computers 5 4 PC Card VCC and VPP regulation and switching SMPS post-regulator/dc-to-dc modules 1 2 F E Consumer and personal electronics 3 G High-effciency linear power supplies I DIM A B C D E F G H I J K H LINE-UP 1 TSV 2 3 SOT-89-5 VOUT (V) ITEM MARKING ITEM MARKING 1.8 KR52S018M C18 * KR52S018F E1 2.5 KR52S025M C25 * KR52S025F E2 2.6 KR52S026M C26 * KR52S026F E3 2.7 KR52S027M C27 * KR52S027F E4 2.8 KR52S028M C28 * KR52S028F E5 2.85 KR52S285M C2J * KR52S285F E6 2.9 KR52S029M C29 * KR52S029F E7 3.0 KR52S030M C30 * KR52S030F E8 3.1 KR52S031M C31 * KR52S031F E9 3.3 KR52S033M C33 * KR52S033F E0 1. BYPASS 2. GND 3. ON/OFF CONTROL 4. VIN 5. VOUT MILLIMETERS _ 0.10 4.50 + _ 0.03 3.00 + _ 0.10 1.60 + _ 0.08 0.90 + _ 0.05 2.50 + _ 0.15 4.30 + _ 0.03 0.42 + _ 0.03 1.50 + _ 0.03 0.47 + _ 0.02 0.31 + _ 0.07 1.50 + * Heat sink is common to 2.GND SOT-89-5 * : Under development 2007. 3. 19 Revision No : 2 1/5 KR52S018M/F ~ KR52S033M/F MARKING PIN DESCRIPTIONS 5 4 Lot No. Type Name 2 1 PIN NO. NAME FUNCTION 1 VIN 2 GND 3 ON/OFF Control Enable/Shutdown (Input):CMOS conpatible input. Logic high = Enable, Logic low or open = Shutdown 4 Bypass Reference Bypass : Connect external 470pF capacitor to GND to reduce output noise. May be left open 5 VOUT Supply Input Ground 3 < TSV > Regulator Output PIN DESCRIPTIONS MARKING 5 4 Type Name 1 2 PIN NO. NAME FUNCTION 1 Bypass Reference Bypass : Connect external 470pF capacitor to GND to reduce output 2 GND 3 ON/OFF Control 4 VIN 5 VOUT Lot No. 3 < SOT-89-5 > Fig. 1 BLOCK DIAGRAM VIN Ground Enable/Shutdown (Input):CMOS conpatible input. Logic high = Enable, Logic low or open = Shutdown Supply Input Regulator Output Fig. 2 TEST CIRCUIT / APPLICATION CIRCUIT 5 1 VOUT VIN = 3.8V 1 5 VOUT = 2.8V COUT BYPASS COUT = 22µF (tantalum) 4 CBYPASS 2 KR52S028M/F + Bandgap Ref. ON/OFF CONTROL ON/OFF 3 CONTROL 3 4 Current Limit Thermal Shutdown 2 CBYPASS = 470pF GND 2007. 3. 19 Revision No : 2 2/5 KR52S018M/F ~ KR52S033M/F MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Supply Input Voltage VIN 16 V ON/OFF Control Voltage VC 5 V Output Current IOUT 500 mA 900 mW (TSV) Power Dissipation (Note) (SOT-89-5) Operating Junction Temperature Topr -40~125 Storage Temperature Tstg -55~150 ELECTRICAL CHARACTERISTICS (Unless otherwise specified, VIN=VOUT+1V, IOUT=100 CHARACTERISTIC , COUT=4.7 SYMBOL , Tj=25 ) MIN. TYP. MAX. KR52S018M/F 1.782 1.8 1.818 KR52S025M/F 2.475 2.5 2.525 KR52S026M/F 2.574 2.6 2.626 KR52S027M/F 2.673 2.7 2.727 2.772 2.8 2.828 KR52S285M/F 2.8215 2.85 2.8785 KR52S029M/F 2.871 2.9 2.929 KR52S030M/F 2.97 3.0 3.03 KR52S031M/F 3.069 3.1 3.131 KR52S033M/F 3.267 3.3 3.333 KR52S028M/F VOUT Output Voltage TEST CONDITION VIN=VOUT+1V UNIT V Load Regulation Reg Load 100 0.5A - - 2.0 % Line Regulation Reg Line VIN=VOUT+1V~12V - - 0.05 %/V V D1 IOUT=100 - 10 60 V D2 IOUT=50mA - 115 175 V D3 IOUT=150mA - 175 300 V D5 IOUT=500mA - 350 500 Ripple Rejection RR f=120Hz - 75 - Output Noise Voltage VNO IOUT=50 , COUT=2.2 CBYPASS= 470pF - 30 - rms 2.0 - - V - 5 20 - - 0.4 VC=0.4V - 0.01 1 IQ1 VC=3V, IOUT=100 - 80 130 IQ2 VC=3V, IOUT=50 - 350 650 IQ3 VC=3V, IOUT=150 - 1.8 2.5 IQ4 VC=3V, IOUT=500 - 12 20 IQ(OFF1) VC=0.4V - 0.05 3 IQ(OFF2) VC=0.18V - 0.10 8 0.51 - - Dropout Voltage Output ON-state voltage for control VC(ON) Output ON-state current for control IC(ON) Output OFF-state voltage for control VC(OFF) Output OFF-state current for control IC(OFF) Quiescent Current Quiescent Current (OFF Mode) ISC Short Circuit Current 2007. 3. 19 Revision No : 2 IO VC=2.0V - VO=0A V A 3/5 KR52S018M/F ~ KR52S033M/F Fig. 1 IGND - IO Fig. 2 Iq - VIN 15 80 12.5 Iq (µA) IGND (mA) 75 10 7.5 70 5 65 2.5 0 60 100 200 300 400 500 3 4 6 8 10 12 IO (mA) VIN (V) Fig. 3 VD - IOUT Fig. 4 VOUT - VIN 450 3.5 400 3.0 350 2.5 VOUT (V) VD (mV) 0 300 250 14 16 2.0 1.5 200 1.0 150 0.5 100 0 IO = 100µA 100 200 300 400 500 8 10 12 Fig. 5 VOUT - IOUT Fig. 6 f - R.R RIPPLE REJECTION R.R (dB) 2.5 VOUT (V) 6 VIN (V) 3.0 2.0 1.5 1.0 0.5 0 100 200 300 400 500 600 700 740 760 780 IOUT (mA) 2007. 3. 19 4 IO (mA) 3.5 0 3 Revision No : 2 100 14 16 IO = 100µA 90 80 70 60 50 40 30 20 10 0 100 101 102 103 104 105 FREQUENCY f (KHz) 4/5 KR52S018M/F ~ KR52S033M/F Fig. 7 VOUT - TEMP Fig. 8 VENH - TEMP 1.6 3 IO = 100µA 1.4 2.5 1.2 VENH (V) VO (V) 2 1.5 1 1.0 0.8 0.6 0.4 0.5 0.2 IO = 100µA 0 -40 10 60 110 160 210 TEAMPERATURE ( C) 0 -40 -20 0 20 40 60 80 100 120 140 160 TEAMPERATURE ( C) Fig. 9 IGND - TEMP 100 IO = 100µA 90 80 IGND (mV) 70 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 120 140 160 TEAMPERATURE ( C) 2007. 3. 19 Revision No : 2 5/5