LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1037AK*LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 SOT– 23 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –50 V Collector–Base Voltage V CBO –60 V Emitter–Base Voltage V –6.0 V EBO Collector Current — Continuous IC –150 mAdc Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature T stg -55 ~+150 °C DEVICE MARKING L2SA1037AKQLT1 =FQ L2SA1037AKSLT1 =G3F L2SA1037AKRLT1 =FR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = –1 mA) Emitter–Base Breakdown Voltage (IE = – 50 µA) Collector–Base Breakdown Voltage (IC = – 50 µA) Collector Cutoff Current (VCB = – 60 V) Emitter cutoff current (VEB = – 6 V) Collector-emitter saturation voltage (IC/ IB = – 50 mA / – 5m A) DC current transfer ratio (V CE = – 6 V, I C= –1mA) Transition frequency (V CE = – 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = – 12 V, I E= 0A, f =1MHz ) Symbol Min Typ Max Unit V – 50 — — V V (BR)EBO –6 — — V V – 60 — — V I CBO — — – 0.1 µA I EBO — — – 0.1 µA V CE(sat) — — -0.5 V h FE 120 –– 560 –– fT — 140 –– MHz C ob — 4.0 5.0 pF (BR)CEO (BR)CBO h FE values are classified as follows: * hFE Q 120~270 R 180~390 S 270~560 LM35–1/3 LESHAN RADIO COMPANY, LTD. L2SA1037AK*LT1 Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) –50 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) –20 –35.0 –10 VCE= –10 V T A = 100°C 25°C – 40°C –10 –50 –2 –1 –0.5 T A = 25°C –28.0 –8 –24.5 –21.0 –6 –17.5 –14.0 –4 –10.5 –7.0 –2 –3.5µA –0.2 –0.1 I B =0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 0 –1.6 –0.4 –0.8 –1.2 –1.6 –2.0 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( ) –100 500 T A = 25°C –80 –60 VCE= –5 V –3V –1V T A = 25°C 500 450 400 350 300 h FE, DC CURRENT GAIN I C, COLLECTOR CURRENT (mA) –31.5 –250 –200 –150 –40 –100 –20 –50 µA 200 100 50 I B =0 0 0 –1 –2 –3 –4 –5 –0.2 V CE , COLLECTOR TO EMITTER VOLTAGE (V) –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) Fig.6 Collector-emitter saturation voltage vs. Fig.5 DC current gain vs. collector current ( ) 500 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) collector current ( ) T A = 100°C h FE, DC CURRENT GAIN 25°C –40°C 200 100 50 VCE= – 6V –0.2 –0.5 –1 –2 –5 –10 –20 I C, COLLECTOR CURRENT (mA) –50 –100 –1 T A = 25°C –0.5 –0.2 I C /I B = 50 20 –0.1 10 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) LM35–2/3 LESHAN RADIO COMPANY, LTD. L2SA1037AK*LT1 Fig.8 Gain bandwidth product vs. emitter current 1000 –1 T A = 25°C V CE = –12V f r , TRANSITION FREQUENCY(MHz) I C /I B = 10 –0.5 –0.2 T A = 100°C 25°C –40°C –0.1 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 500 200 100 50 –100 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I E, EMITTER CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 20 T A = 25°C f =1MHz I E = 0A I C = 0A C ib 10 C ob 5 2 –0.5 –1 –2 –5 –10 –20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) LM35–3/3