WEITRON 2SA1576A

2SA1576A
PNP General Purpose Transistors
P b Lead(Pb)-Free
3
1
2
SOT-323
MAXIMUM RATINGS(Ta=25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6.0
V
Collector Current - Continuous
IC
-150
mA
Total Device Dissipation
TA=25°C
PD
200
mW
Junction Temperature
Tj
+150
°C
Storage Temperature
Tstg
-55 to +150
°C
SOT-323 Outline Dimension
Unit:mm
A
B
TOP VIEW
Dim
A
B
C
D
E
G
H
J
K
L
M
C
D
E
G
H
K
J
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L
M
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SOT-323
Min
0.30
1.15
2.00
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
21-Jan-09
2SA1576A
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC = -50µA, I E = 0A
V(BR)CBO
-60
-
-
V
Collector-Emitter Breakdown Voltage
IC = -1mA, IB = 0A
V(BR)CEO
-50
-
-
V
Emitter-Base Breakdown Voltage
IE= -50µA, IC = 0A
V(BR)EBO
-6.0
-
-
V
Collector Cutoff Current
VCB = -60V, IE = 0A
ICBO
-
-
-0.1
µA
Emitter Cutoff Current
VEB = -6V, IC = 0A
IEBO
-
-
-0.1
µA
VCE(sat)
-
-
-0.5
V
hFE
120
-
560
140
-
MHz
4
5
pF
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
IC = -50mA, I B = -5mA
DC Current Transfer Ration
VCE = -6V, IC = -1mA
SMALL-SIGNAL CHARACTERISTICS
Transition frequence
VCE=-12V, I C = -2mA, f=30MHz
Collector output capacitane
VCB=-12V, I E = 0mA, f=1MHz
fT
-
Cob
-
CLASSIFICATION hFE
Rank
Q
R
S
Range
120-270
180-390
270-560
Marking
FQ
FR
FS
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21-Jan-09
2SA1576A
Electrical characteristic curves
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−24.5
−17.5
−10.5
−7.0
−2
−3.5µA
−0.4
−0.8
−1.2
−1.6
500
−500
−450
−400
−350
−300
−250
−150
−40
−100
−20
−50µA
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (II)
Ta=100˚C
−40˚C
200
Ta=25˚C
−200
IB=0
−2.0
25˚C
100
−60
Fig.2 Grounded emitter output
characteristics (I)
DC CURRENT GAIN : hFE
100
50
50
−1
Ta=25˚C
−0.5
−0.2
IC/IB=50
−0.1
20
10
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−0.2 −0.5 −1
−50 −100
TRANSITION FREQUENCY : fT (MHz)
−0.5
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
−0.05
−0.2 −0.5 −1
−2
1000
−5 −10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
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Ta=25˚C
VCE=−12V
200
100
50
1
2
5
10
20
50
100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
3/3
−5 −10 −20
−50 −100
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
500
0.5
−2
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
Fig.4 DC current gain vs.
collector current (I)
lC/lB=10
−0.2 −0.5 −1
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
−1
VCE=−6V
−5 −10 −20 −50 −100
−2
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
DC CURRENT GAIN : hFE
−14.0
−4
−80
COLLECTOR TO MITTER VOLTAGE : VCE (V)
VCE=−5V
−3V
−1V
200
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−21.0
−6
0
Fig.1 Grounded emitter propagation
characteristics
Ta=25˚C
−28.0
−8
BASE TO EMITTER VOLTAGE : VBE (V)
500
−100
−31.5
COLLECTOR CURRENT : IC (mA)
−10
−35.0
Ta=25˚C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−20
−10
VCE=−6V
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
−50
20
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cib
10
Co
b
5
2
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
21-Jan-09