2SA1576A PNP General Purpose Transistors P b Lead(Pb)-Free 3 1 2 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6.0 V Collector Current - Continuous IC -150 mA Total Device Dissipation TA=25°C PD 200 mW Junction Temperature Tj +150 °C Storage Temperature Tstg -55 to +150 °C SOT-323 Outline Dimension Unit:mm A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 1/3 SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 21-Jan-09 2SA1576A ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50µA, I E = 0A V(BR)CBO -60 - - V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A V(BR)CEO -50 - - V Emitter-Base Breakdown Voltage IE= -50µA, IC = 0A V(BR)EBO -6.0 - - V Collector Cutoff Current VCB = -60V, IE = 0A ICBO - - -0.1 µA Emitter Cutoff Current VEB = -6V, IC = 0A IEBO - - -0.1 µA VCE(sat) - - -0.5 V hFE 120 - 560 140 - MHz 4 5 pF ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -50mA, I B = -5mA DC Current Transfer Ration VCE = -6V, IC = -1mA SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-12V, I C = -2mA, f=30MHz Collector output capacitane VCB=-12V, I E = 0mA, f=1MHz fT - Cob - CLASSIFICATION hFE Rank Q R S Range 120-270 180-390 270-560 Marking FQ FR FS WEITRON http://www.weitron.com.tw 2/3 21-Jan-09 2SA1576A Electrical characteristic curves −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −24.5 −17.5 −10.5 −7.0 −2 −3.5µA −0.4 −0.8 −1.2 −1.6 500 −500 −450 −400 −350 −300 −250 −150 −40 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics (II) Ta=100˚C −40˚C 200 Ta=25˚C −200 IB=0 −2.0 25˚C 100 −60 Fig.2 Grounded emitter output characteristics (I) DC CURRENT GAIN : hFE 100 50 50 −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 TRANSITION FREQUENCY : fT (MHz) −0.5 −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 1000 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) WEITRON http://www.weitron.com.tw Ta=25˚C VCE=−12V 200 100 50 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 3/3 −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) 500 0.5 −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) Fig.4 DC current gain vs. collector current (I) lC/lB=10 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −1 VCE=−6V −5 −10 −20 −50 −100 −2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) DC CURRENT GAIN : hFE −14.0 −4 −80 COLLECTOR TO MITTER VOLTAGE : VCE (V) VCE=−5V −3V −1V 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −21.0 −6 0 Fig.1 Grounded emitter propagation characteristics Ta=25˚C −28.0 −8 BASE TO EMITTER VOLTAGE : VBE (V) 500 −100 −31.5 COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −20 −10 VCE=−6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 21-Jan-09