LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40XLT1G Features 3 Low forward current Guard ring protected Low diode capacitance. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes. 3 Cathode BAS40 single diode. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping LBAS40LT1G B1 3000 Tape & Reel LBAS40LT3G B1 10000 Tape & Reel LBAS40-04LT1G CB 3000 Tape & Reel LBAS40-04LT3G CB 10000 Tape & Reel LBAS40-05LT1G 455 3000 Tape & Reel LBAS40-05LT3G 455 10000 Tape & Reel LBAS40-06LT1G L2 L2 3000 Tape & Reel LBAS40-06LT3G 10000 Tape & Reel 3 Cathode/Anode 1 Anode 2 Cathode BAS40-04 double diode. 3 Cathode 1 Anode 2 Anode BAS40-05 double diode. 3 Anode 1 Cathode 2 Cathode BAS40-06 double diode. 1/4 LESHAN RADIO COMPANY, LTD. LBAS40XLT1G MAXIMUM RATINGS (TA = 25°C) Parameter Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb Min. -65 -65 Max. 40 120 120 200 +150 150 +150 Unit V mA mA mA °C °C °C Conditions tp<1s;δ<0.5 tp<10ms DEVICE MARKING LBAS40LT1G=B1 LBAS40-04LT1G=CB LBAS40-05LT1G=45 LBAS40-06LT1G=L2 ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Forward voltage(Fig.1) Symbol VF Reverse current(Fig.2 ;note1) IR Diode capacitance(Fig.4) Cd Max. 400 560 1 1 10 5 Unit mV mv v µΑ µA pF Conditions IF=1mA IF=10mA IF=40mA VR=30V VR=40V f=1MHz;VR=0 Note: 1. Pulse test:tp=300µs;δ=0.02. THERMAL CHARACTERISTICS PARAMETER Thermal resistance from junction to ambient SYMBOL VALUE UNIT CONDITIONS Rth j-a 500 k/w note1 Note 1. Refer to SOT23 or SOT143B standard mounting conditions. 2/4 LESHAN RADIO COMPANY, LTD. LBAS40XLT1G Electrical characteristic curves(TA = 25°C) 103 Tamb=85OC FORWARD VOLTAGE: I (µA) R FORWARD VOLTAGE: I (mA) F 102 O 10 Tamb=150 C Tamb=25OC 1 Tamb=-40OC 10-1 Tamb=150OC 2 10 10 Tamb=85OC 1 10- 10-2 0 0.2 0.4 0.6 0.8 1.0 1 10-2 Tamb=25OC 0 20 30 40 Fig.2 Reverse current as a function of reverse voltage; typical values. Fig.1 Forward current as a function of forward voltage; typical values. 5 103 4 FORWARD VOLTAGE: Cd(pF) FORWARD VOLTAGE: rdiff(Ω) 10 FORWARD VOLTAGE: V (V) R FORWARD VOLTAGE: V (V) F 102 10 1 -1 10 1 2 10 FORWARD VOLTAGE: I (mA) F 10 f=10KHz Fig.3 Differential forward resistance as a function of forward current;typical values. 3 2 1 0 0 10 20 FORWARD VOLTAGE: V (V) R 30 40 O f=1MHz Tamb=25 C Fig.4 Diode capacitance as a function of reverse voltage;typical values. 3/4 LESHAN RADIO COMPANY, LTD. LBAS40XLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 4/4