LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only ★ BAR DIGIT LED DISPLAY LBD1B2A-XX DATA SHEET DOC. NO : QW0905- LBD1B2A-XX REV. : A DATE : 20 - Apr. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/10 PART NO. LBD1B2A-XX Package Dimensions 45.5(1.791") 6.0 (0.236") 4.9X8=39.2(1.543") G 7.7 (0.303") Y G Y E R E E 5.5 (0.217") 1.5 (0.059") E 4.0 (0.157") Ø0.45 TYP 4.0 (0.157") 2.54X10=25.4 (1.0") 3.2±0.5 PIN NO.1 LBD1B2A-XX LIGITEK Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 1.0MIN 2.0 (0.079") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1B2A-XX Page 2/10 Internal Circuit Diagram LBD1B2A-XX 1, 11 UG HYS UG HYS HE HRF HE HE HE 2 3 4 5 6 7 8 9 10 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1B2A-XX Page 3/10 Electrical Connection PIN NO.1 LBD1B2A-XX 1 Common Anode 2 Cathode Green 3 Cathode Yellow 4 Cathode Green 5 Cathode Yellow 6 Cathode Orange 7 Cathode Red 8 Cathode Orange 9 Cathode Orange 10 Cathode Orange 10 Common Anode LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1B2A-XX Page 4/10 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT UG HYS HE HRF Forward Current Per Chip IF 30 30 30 30 mA Peak Forward Current PerChip (Duty 1/10,0.1ms Pulse Width) IFP 120 60 60 90 mA Power Dissipation Per Chip PD 100 75 75 75 mW Ir 10 μA Electrostatic Discharge( * ) ESD 2000 μA Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO AlGaInP Green AlGaInP Yellow LBD1B2A-XX AlGaInP Orange AlGaInP Red Common Anode Electrical λD (nm) △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. 574 20 1.7 2.1 2.6 10.5 18 2:1 587 15 1.7 2.1 2.6 21.5 35 2:1 620 17 1.7 2.1 2.6 10.5 21.5 630 20 1.5 1.7 2.4 21.5 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 35 2:1 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1B2A-XX Page 5/10 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1B2A-XX Page 6/10 Typical Electro-Optical Characteristics Curve UG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 2.0 4.0 3.0 5.0 1.0 10 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 60 40 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page7/10 PART NO. LBD1B2A-XX Typical Electro-Optical Characteristics Curve HYS CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.5 1.0 2.0 2.5 3.0 1.0 10 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 1.2 3.0 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1B2A-XX Page 8/10 Typical Electro-Optical Characteristics Curve HE CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 1.5 2.0 2.5 3.0 1.0 10 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 2.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 650 Wavelength (nm) 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 700 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 9/10 PART NO. LBD1B2A-XX Typical Electro-Optical Characteristics Curve HRF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1.0 1.5 2.0 2.5 3.0 1.0 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize@25 ℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 -0 20 40 60 80 100 Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 100 10 1.0 0.5 0 550 600 650 Wavelength (nm) 700 2.5 2.0 1.5 1.0 0.5 0 -40 -20 -0 20 40 60 80 Ambient Temperature( ℃) 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 10/10 PART NO. LBD1B2A-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11