LESHAN RADIO COMPANY, LTD. LESD8L5.0CT5G Transient Voltage Suppressors LESD8L5.0CT5G ESD Protection Diodes with Ultra−Low Capacitance 1 The ESD8L is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. 2 SOD882 Specification Features: • Ultra Low Capacitance 0.5 pF • Low Clamping Voltage • Small Body Outline Dimensions: • • • • • • 1 0.039″ x 0.024″ (1.00 mm x 0.60 mm) Low Body Height: 0.016″ (0.4 mm) Stand−off Voltage: 5 V Low Leakage Response Time is Typically < 1.0 ns IEC61000−4−2 Level 4 ESD Protection This is a Pb−Free Device 2 Ordering information Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) Device Marking Shipping LESD8L5.0CT1G N 5000/Tape&Reel LESD8L5.0CT3G N 8000/Tape&Reel LESD8L5.0CT5G N 10000/Tape&Reel QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating IEC 61000−4−2 (ESD) Symbol Contact Air Value Unit ±10 ±15 kV Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C °PD° 150 mW Storage Temperature Range Tstg −55 to +150 °C Junction Temperature Range TJ −55 to +125 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. Rev.O 1/4 86-755-83468588 www.fazhanIC.com LESHAN RADIO COMPANY, LTD. LESD8L5.0CT5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR I Working Peak Reverse Voltage IT VC VBR VRWM IR Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C IPP IR VRWM VBR VC IT V IPP Bi−Directional TVS Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types) VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT C (pF) VC (V) @ IPP = 1 A (Note 3) VC Per IEC61000−4−2 (Note 4) Device Device Marking Max Max Min mA Typ Max Max LESD8L5.0CT5G N 5.0 1.0 5.4 1.0 0.5 0.9 12.9 Figures 1 and 2 See Below 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 Rev.O 2/4 86-755-83468588 www.fazhanIC.com LESHAN RADIO COMPANY, LTD. LESD8L5.0CT5G IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 80 Figure 5. 8 X 20 ms Pulse Waveform Rev.O 3/4 86-755-83468588 www.fazhanIC.com LESHAN RADIO COMPANY, LTD. LESD8L5.0CT5G SOD882 DIMENSION OUTLINE: Unit:mm Rev.O 4/4 86-755-83468588 www.fazhanIC.com