UTC-IC 22N65

UNISONIC TECHNOLOGIES CO., LTD
22N65
Preliminary
Power MOSFET
HEXFET POWER MOSFET
„
DESCRIPTION
As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced
technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
„
1
TO-247
FEATURES
* RDS(ON) = 350 Ω
* Ultra low gate charge ( Typical 150 nC )
* Low reverse transfer capacitance ( CRSS = typical 36 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
22N65L-T47-T
22N65G-T47-T
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Package
TO-247
Pin Assignment
1
2
3
G
D
S
Packing
Tube
1 of 8
QW-R502-466.a
22N65
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current
IAR
22
A
Continuous Drain Current
ID
22
A
Pulsed Drain Current (Note 1)
IDM
88
A
Single Pulsed
EAS
380
mJ
Avalanche Energy
Repetitive
EAR
37
mJ
Peak Diode Recovery dv/dt (Note 2)
dv/dt
18
V/ns
Power Dissipation
PD
370
W
Junction Temperature
TJ
150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. ISD ≤ 22A, di/dt ≤540 A/μs, VDD ≤ V(BR)DSS, TJ ≤150°C.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
40
0.34
UNIT
°C /W
°C /W
ELECTRICAL CHARACTERISTICS
(TJ =25°C, L = 1.5mH, RG=25Ω, IAS = 22A. Unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=650V, VGS=0V
Gate- Source Leakage Current
IGSS
VDS=0V, VGS=±30V
Breakdown Voltage Temperature
ID=1mA,
ΔBVDSS/ΔTJ
Coefficient
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=13A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=300V, ID=22A, RG=6.2Ω
VGS=10V (Note 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDS=480V, VGS=10V, ID=22A
Gate Source Charge
QGS
(Note 2)
Gate Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=22A
Continuous Source Current
IS
(Body Diode) (Note 1)
Pulsed Source Current (Body Diode)
ISM
Reverse Recovery Time
tRR
IS=22A,
di/dt=100A/μs (Note 2)
Reverse Recovery Charge
QRR
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
650
50
±100
0.30
2.0
0.3
V
µA
nA
V/°C
4.0
0.35
V
Ω
3570
350
36
pF
pF
pF
26
99
48
37
150
45
76
ns
ns
ns
ns
nC
nC
nC
1.5
V
22
A
88
890
11
A
ns
µC
590
7.2
2 of 5
QW-R502-466.a
22N65
Preliminary
Power MOSFET
TEST CIRCUITS
„
Switching Test Circuit
Switching Waveforms
Unclamped Inductive Switching Test Circuit
12V
Same Type
as D.U.T.
50kΩ
0.2μF
Unclamped Inductive Switching Waveforms
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
VGS
3mA
IG
ID
Charge
Gate Charge Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge Waveform
3 of 5
QW-R502-466.a
22N65
„
Preliminary
Power MOSFET
TEST CIRCUITS(Cont.)
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Forward Voltage Drop
4 of 5
QW-R502-466.a
22N65
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-466.a