LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 525kHz/1.6MHz, Constant Current Boost and SEPIC LED Driver with Internal Compensation Check for Samples: LM3410, LM3410Q FEATURES DESCRIPTION • • • • • The LM3410 constant current LED driver is a monolithic, high frequency, PWM DC/DC converter in 5-pin 1 23 • • • • • • Space Saving SOT-23 and WSON Packages Input Voltage Range of 2.7V to 5.5V Output Voltage Range of 3V to 24V 2.8A Typical Switch Current High Switching Frequency – 525 KHz (LM3410Y) – 1.6 MHz (LM3410X) 170 mΩ NMOS Switch 190 mV Internal Voltage Reference Internal Soft-Start Current-Mode, PWM Operation Thermal Shutdown LM3410Q is AEC-Q100 Grade 1 Qualified and is Manufactured on an Automotive Grade Flow SOT-23, 6-pin WSON, and 8-pin MSOP-PowerPad™ packages. With a minimum of external components the LM3410 is easy to use. It can drive 2.8A typical peak currents with an internal 170 mΩ NMOS switch. Switching frequency is internally set to either 525 kHz or 1.60 MHz, allowing the use of extremely small surface mount inductors and chip capacitors. Even though the operating frequency is high, efficiencies up to 88% are easy to achieve. External shutdown is included, featuring an ultra-low standby current of 80 nA. The LM3410 utilizes current-mode control and internal compensation to provide high-performance over a wide range of operating conditions. Additional features include dimming, cycle-by-cycle current limit, and thermal shutdown. APPLICATIONS • • • • • LED Backlight Current Source LiIon Backlight OLED and HB LED Driver Handheld Devices LED Flash Driver Automotive Typical Boost Application Circuit L1 D1 VIN 4 DIM 5 C1 VIN 3 LM3410 DIMM FB 2 LEDs C2 GND 1 SW R1 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPad is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007–2013, Texas Instruments Incorporated LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com Connection Diagram SW 1 5 VIN PGND 1 6 SW VIN 2 5 AGND GND 2 FB 3 4 NC 1 8 NC PGND 2 7 SW VIN 3 6 AGND DIM 4 5 FB DIM DIM Figure 1. 5-Pin SOT-23 (Top View) See DBV Package 3 4 FB Figure 2. 6-Pin WSON (Top View) See NGG0006A Package Figure 3. 8-Pin MSOP-PowerPad (Top View) See GDN0008A Package Table 1. Pin Descriptions - 5-Pin SOT-23 Pin Name Function 1 SW 2 GND Output switch. Connect to the inductor, output diode. 3 FB Feedback pin. Connect FB to external resistor divider to set output voltage. 4 DIM Dimming and shutdown control input. Logic high enables operation. Duty Cycle from 0 to 100%. Do not allow this pin to float or be greater than VIN + 0.3V. 5 VIN Supply voltage pin for power stage, and input supply voltage. Signal and power ground pin. Place the bottom resistor of the feedback network as close as possible to this pin. Table 2. Pin Descriptions - 6-Pin WSON 2 Pin Name Function 1 PGND Power ground pin. Place PGND and output capacitor GND close together. 2 VIN Supply voltage for power stage, and input supply voltage. 3 DIM Dimming and shutdown control input. Logic high enables operation. Duty Cycle from 0 to 100%. Do not allow this pin to float or be greater than VIN + 0.3V. 4 FB Feedback pin. Connect FB to external resistor divider to set output voltage. 5 AGND 6 SW DAP GND Signal ground pin. Place the bottom resistor of the feedback network as close as possible to this pin and pin 4. Output switch. Connect to the inductor, output diode. Signal and Power ground. Connect to pin 1 and pin 5 on top layer. Place 4-6 vias from DAP to bottom layer GND plane. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 Table 3. Pin Descriptions - 8-Pin MSOP-PowerPad Pin Name 1 - Function 2 PGND 3 VIN Supply voltage for power stage, and input supply voltage. 4 DIM Dimming and shutdown control input. Logic high enables operation. Duty Cycle from 0 to 100%. Do not allow this pin to float or be greater than VIN + 0.3V. 5 FB Feedback pin. Connect FB to external resistor divider to set output voltage. 6 AGND 7 SW 8 - DAP GND No Connect Power ground pin. Place PGND and output capacitor GND close together. Signal ground pin. Place the bottom resistor of the feedback network as close as possible to this pin and pin 5 Output switch. Connect to the inductor, output diode. No Connect Signal and Power ground. Connect to pin 2 and pin 6 on top layer. Place 4-6 vias from DAP to bottom layer GND plane. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) VIN -0.5V to 7V SW Voltage -0.5V to 26.5V FB Voltage -0.5V to 3.0V DIM Voltage ESD Susceptibility -0.5V to 7.0V (3) Junction Temperature Human Body Model 150°C Storage Temp. Range -65°C to 150°C Soldering Information (1) (2) (3) (4) Infrared/Convection Reflow (15sec) (1) VIN 2.7V to 5.5V VDIM (2) 0V to VIN VSW 3V to 24V Junction Temperature Range -40°C to 125°C Power Dissipation (Internal) SOT-23 (2) 220°C Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and conditions, see the Electrical Characteristics. If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications. The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. Test method is per JESD22-A114. Thermal shutdown will occur if the junction temperature exceeds the maximum junction temperature of the device. Operating Ratings (1) 2kV (4) 400 mW Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and conditions, see the Electrical Characteristics. Do not allow this pin to float or be greater than VIN +0.3V. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 3 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com Electrical Characteristics Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C to 125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. VIN = 5V, unless otherwise indicated under the Conditions column. Symbol VFB ΔVFB/VIN Parameter Feedback Voltage Line Regulation Feedback Input Bias Current FSW Switching Frequency DMAX Maximum Duty Cycle DMIN Minimum Duty Cycle Switch On Resistance ICL Switch Current Limit SU Start Up Time IQ VDIM_H (1) (2) 4 Typ Max 178 190 202 mV - 0.06 - %/V - 0.1 1 µA LM3410X 1200 1600 2000 LM3410Y 360 525 680 LM3410X 88 92 - LM3410Y 90 95 - LM3410X - 5 - LM3410Y - 2 - SOT-23 and MSOP-PowerPad - 170 330 190 350 2.1 2.80 - A - 20 - µs LM3410X VFB = 0.25 - 7.0 11 LM3410Y VFB = 0.25 - 3.4 7 All Options VDIM = 0V - 80 - VIN Rising - 2.3 2.65 VIN Falling 1.7 1.9 - - - 0.4 1.8 - - VIN = 2.7V to 5.5V WSON Quiescent Current (switching) Quiescent Current (shutdown) UVLO Min Feedback Voltage IFB RDS(ON) Conditions Undervoltage Lockout Shutdown Threshold Voltage Enable Threshold Voltage Units kHz % % mΩ mA nA V V ISW Switch Leakage VSW = 24V - 1.0 - µA IDIM Dimming Pin Current Sink/Source - 100 - nA θJA Junction to Ambient 0 LFPM Air Flow (1) WSON and MSOP-PowerPad Packages - 80 - SOT-23 Package - 118 - θJC Junction to Case WSON and MSOP-PowerPad Packages - 18 - SOT-23 Package - 60 - TSD Thermal Shutdown Temperature - 165 - (1) (2) °C/W °C/W °C Applies for packages soldered directly onto a 3” x 3” PC board with 2oz. copper on 4 layers in still air. Thermal shutdown will occur if the junction temperature exceeds the maximum junction temperature of the device. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 Typical Performance Characteristics All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Application Information section of this datasheet. TJ = 25C, unless otherwise specified. LM3410X Efficiency vs VIN (RSET = 4Ω) LM3410X Start-Up Signature Figure 4. Figure 5. 4 x 3.3V LEDs 500 Hz DIM FREQ D = 50% DIM Freq and Duty Cycle vs Avg I-LED Figure 6. Figure 7. Current Limit vs Temperature RDSON vs Temperature Figure 8. Figure 9. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 5 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics (continued) All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Application Information section of this datasheet. TJ = 25C, unless otherwise specified. Oscillator Frequency vs Temperature - "X" Oscillator Frequency vs Temperature - "Y" Figure 10. Figure 11. VFB vs Temperature Figure 12. 6 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 Simplified Internal Block Diagram DIM VIN ThermalSHDN Control Logic + RampArtificial UVLO = 2.3V Oscillator + - cv 1.6 MHz + S R SW + NMOS + R Q - VFB + VREF = 190 mV Internal Compensation ILIMIT ISENSE + GND Figure 13. Simplified Block Diagram Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 7 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com APPLICATION INFORMATION THEORY OF OPERATION The LM3410 is a constant frequency PWM, boost regulator IC. It delivers a minimum of 2.1A peak switch current. The device operates very similar to a voltage regulated boost converter except that it regulates the output current through LEDs. The current magnitude is set with a series resistor. This series resistor multiplied by the LED current creates the feedback voltage (190 mV) which the converter regulates to. The regulator has a preset switching frequency of either 525 kHz or 1.60 MHz. This high frequency allows the LM3410 to operate with small surface mount capacitors and inductors, resulting in a DC/DC converter that requires a minimum amount of board space. The LM3410 is internally compensated, so it is simple to use, and requires few external components. The LM3410 uses current-mode control to regulate the LED current. The following operating description of the LM3410 will refer to the Simplified Block Diagram (Figure 13) the simplified schematic (Figure 14), and its associated waveforms (Figure 15). The LM3410 supplies a regulated LED current by switching the internal NMOS control switch at constant frequency and variable duty cycle. A switching cycle begins at the falling edge of the reset pulse generated by the internal oscillator. When this pulse goes low, the output control logic turns on the internal NMOS control switch. During this on-time, the SW pin voltage (VSW) decreases to approximately GND, and the inductor current (IL) increases with a linear slope. IL is measured by the current sense amplifier, which generates an output proportional to the switch current. The sensed signal is summed with the regulator’s corrective ramp and compared to the error amplifier’s output, which is proportional to the difference between the feedback voltage and VREF. When the PWM comparator output goes high, the output switch turns off until the next switching cycle begins. During the switch off-time, inductor current discharges through diode D1, which forces the SW pin to swing to the output voltage plus the forward voltage (VD) of the diode. The regulator loop adjusts the duty cycle (D) to maintain a regulated LED current. IL L1 D1 Q1 VIN Control + VSW - VO IC C1 ILED Figure 14. Simplified Boost Topology Schematic 8 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 VOUT + VD Vsw (t) t VIN VL(t) t VIN - VOUT - VD I L (t) iL t I DIODE (t) t ( iL - - i OUT ) I Capacitor (t) t - i OUT 'v VOUT (t) DTS TS Figure 15. Typical Waveforms CURRENT LIMIT The LM3410 uses cycle-by-cycle current limiting to protect the internal NMOS switch. It is important to note that this current limit will not protect the output from excessive current during an output short circuit. The input supply is connected to the output by the series connection of an inductor and a diode. If a short circuit is placed on the output, excessive current can damage both the inductor and diode. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 9 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com Design Guide SETTING THE LED CURRENT ILED VFB RSET Figure 16. Setting ILED The LED current is set using the following equation: VFB = ILED RSET where • RSET is connected between the FB pin and GND. (1) DIM PIN / SHUTDOWN MODE The average LED current can be controlled using a PWM signal on the DIM pin. The duty cycle can be varied between 0 and 100% to either increase or decrease LED brightness. PWM frequencies in the range of 1 Hz to 25 kHz can be used. For controlling LED currents down to the µA levels, it is best to use a PWM signal frequency between 200 and 1 kHz. The maximum LED current would be achieved using a 100% duty cycle, i.e. the DIM pin always high. LED-DRIVE CAPABILITY When using the LM3410 in the typical application configuration, with LEDs stacked in series between the VOUT and FB pin, the maximum number of LEDs that can be placed in series is dependent on the maximum LED forward voltage (VFMAX). (VFMAX x NLEDs) + 190 mV < 24V (2) When inserting a value for maximum VFMAX the LED forward voltage variation over the operating temperature range should be considered. THERMAL SHUTDOWN Thermal shutdown limits total power dissipation by turning off the output switch when the IC junction temperature exceeds 165°C. After thermal shutdown occurs, the output switch doesn’t turn on until the junction temperature drops to approximately 150°C. INDUCTOR SELECTION The inductor value determines the input ripple current. Lower inductor values decrease the physical size of the inductor, but increase the input ripple current. An increase in the inductor value will decrease the input ripple current. 10 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 'i L I L (t) iL VIN L VIN - VOUT L DTS TS t Figure 17. Inductor Current 2'iL § VIN · = ¸ DTS ¨© L ¹ § VIN · ¸ x DTS 'iL = ¨ © 2L ¹ (3) The Duty Cycle (D) for a Boost converter can be approximated by using the ratio of output voltage (VOUT) to input voltage (VIN). VOUT VIN § 1 · 1 =¨ ¸= c ©1 - D¹ D (4) Therefore: D= VOUT - VIN VOUT (5) Power losses due to the diode (D1) forward voltage drop, the voltage drop across the internal NMOS switch, the voltage drop across the inductor resistance (RDCR) and switching losses must be included to calculate a more accurate duty cycle (See Calculating Efficiency and Junction Temperature for a detailed explanation). A more accurate formula for calculating the conversion ratio is: K VOUT = VIN '¶ Where • η equals the efficiency of the LM3410 application. (6) Or: K= VOUT x ILED VIN x IIN (7) Therefore: D= VOUT - KVIN VOUT (8) Inductor ripple in a LED driver circuit can be greater than what would normally be allowed in a voltage regulator Boost and Sepic design. A good design practice is to allow the inductor to produce 20% to 50% ripple of maximum load. The increased ripple shouldn’t be a problem when illuminating LEDs. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 11 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com From the previous equations, the inductor value is then obtained. § VIN · L= ¨ ¸ x DTS ©2'iL¹ (9) Where 1/TS = fSW (10) One must also ensure that the minimum current limit (2.1A) is not exceeded, so the peak current in the inductor must be calculated. The peak current (Lpk I) in the inductor is calculated by: ILpk = IIN + ΔIL or ILpk = IOUT /D' + ΔiL (11) When selecting an inductor, make sure that it is capable of supporting the peak input current without saturating. Inductor saturation will result in a sudden reduction in inductance and prevent the regulator from operating correctly. Because of the speed of the internal current limit, the peak current of the inductor need only be specified for the required maximum input current. For example, if the designed maximum input current is 1.5A and the peak current is 1.75A, then the inductor should be specified with a saturation current limit of >1.75A. There is no need to specify the saturation or peak current of the inductor at the 2.8A typical switch current limit. Because of the operating frequency of the LM3410, ferrite based inductors are preferred to minimize core losses. This presents little restriction since the variety of ferrite-based inductors is huge. Lastly, inductors with lower series resistance (DCR) will provide better operating efficiency. For recommended inductors see Example Circuits. INPUT CAPACITOR An input capacitor is necessary to ensure that VIN does not drop excessively during switching transients. The primary specifications of the input capacitor are capacitance, voltage, RMS current rating, and ESL (Equivalent Series Inductance). The recommended input capacitance is 2.2 µF to 22 µF depending on the application. The capacitor manufacturer specifically states the input voltage rating. Make sure to check any recommended deratings and also verify if there is any significant change in capacitance at the operating input voltage and the operating temperature. The ESL of an input capacitor is usually determined by the effective cross sectional area of the current path. At the operating frequencies of the LM3410, certain capacitors may have an ESL so large that the resulting impedance (2πfL) will be higher than that required to provide stable operation. As a result, surface mount capacitors are strongly recommended. Multilayer ceramic capacitors (MLCC) are good choices for both input and output capacitors and have very low ESL. For MLCCs it is recommended to use X7R or X5R dielectrics. Consult capacitor manufacturer datasheet to see how rated capacitance varies over operating conditions. OUTPUT CAPACITOR The LM3410 operates at frequencies allowing the use of ceramic output capacitors without compromising transient response. Ceramic capacitors allow higher inductor ripple without significantly increasing output ripple. The output capacitor is selected based upon the desired output ripple and transient response. The initial current of a load transient is provided mainly by the output capacitor. The output impedance will therefore determine the maximum voltage perturbation. The output ripple of the converter is a function of the capacitor’s reactance and its equivalent series resistance (ESR): § 'VOUT = 'iL x RESR + ¨ © VOUT x D · 2 x fSW x ROUT x COUT ¸ ¹ (12) When using MLCCs, the ESR is typically so low that the capacitive ripple may dominate. When this occurs, the output ripple will be approximately sinusoidal and 90° phase shifted from the switching action. Given the availability and quality of MLCCs and the expected output voltage of designs using the LM3410, there is really no need to review any other capacitor technologies. Another benefit of ceramic capacitors is their ability to bypass high frequency noise. A certain amount of switching edge noise will couple through parasitic capacitances in the inductor to the output. A ceramic capacitor will bypass this noise while a tantalum will not. Since the output capacitor is one of the two external components that control the stability of the regulator control loop, most applications will require a minimum at 0.47 µF of output capacitance. Like the input capacitor, recommended multilayer ceramic capacitors are X7R or X5R. Again, verify actual capacitance at the desired operating voltage and temperature. 12 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 DIODE The diode (D1) conducts during the switch off time. A Schottky diode is recommended for its fast switching times and low forward voltage drop. The diode should be chosen so that its current rating is greater than: ID1 ≥ IOUT (13) The reverse breakdown rating of the diode must be at least the maximum output voltage plus appropriate margin. OUTPUT OVER-VOLTAGE PROTECTION A simple circuit consisting of an external zener diode can be implemented to protect the output and the LM3410 device from an over-voltage fault condition. If an LED fails open, or is connected backwards, an output open circuit condition will occur. No current is conducted through the LED’s, and the feedback node will equal zero volts. The LM3410 will react to this fault by increasing the duty-cycle, thinking the LED current has dropped. A simple circuit that protects the LM3410 is shown in Figure 18. Zener diode D2 and resistor R3 is placed from VOUT in parallel with the string of LEDs. If the output voltage exceeds the breakdown voltage of the zener diode, current is drawn through the zener diode, R3 and sense resistor R1. Once the voltage across R1 and R3 equals the feedback voltage of 190 mV, the LM3410 will limit its duty-cycle. No damage will occur to the LM3410, the LED’s, or the zener diode. Once the fault is corrected, the application will work as intended. VSW D1 O V P VFB L EDs D2 C2 R3 R1 Figure 18. Overvoltage Protection Circuit PCB Layout Considerations When planning layout there are a few things to consider when trying to achieve a clean, regulated output. The most important consideration when completing a Boost Converter layout is the close coupling of the GND connections of the COUT capacitor and the LM3410 PGND pin. The GND ends should be close to one another and be connected to the GND plane with at least two through-holes. There should be a continuous ground plane on the bottom layer of a two-layer board except under the switching node island. The FB pin is a high impedance node and care should be taken to make the FB trace short to avoid noise pickup and inaccurate regulation. The RSET feedback resistor should be placed as close as possible to the IC, with the AGND of RSET (R1) placed as close as possible to the AGND (pin 5 for the WSON) of the IC. Radiated noise can be decreased by choosing a shielded inductor. The remaining components should also be placed as close as possible to the IC. Please see TI Lit Number SNVA054 for further considerations and the LM3410 demo board as an example of a four-layer layout. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 13 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com Below is an example of a good thermal and electrical PCB design. LEDs PCB R1 PGND DIM FB 4 3 AGND 5 C2 2 VIN VSW VO 6 1 PGND D1 C1 SW L1 Figure 19. Boost PCB Layout Guidelines This is very similar to our LM3410 demonstration boards that are obtainable via the Texas Instruments website. The demonstration board consists of a two layer PCB with a common input and output voltage application. Most of the routing is on the top layer, with the bottom layer consisting of a large ground plane. The placement of the external components satisfies the electrical considerations, and the thermal performance has been improved by adding thermal vias and a top layer “Dog-Bone”. For certain high power applications, the PCB land may be modified to a "dog bone" shape (see Figure 20). Increasing the size of ground plane and adding thermal vias can reduce the RθJA for the application. COPPER PGND 1 6 SW VIN 2 5 AGND DIM 3 4 FB COPPER Figure 20. PCB Dog Bone Layout Thermal Design When designing for thermal performance, one must consider many variables: Ambient Temperature: The surrounding maximum air temperature is fairly explanatory. As the temperature increases, the junction temperature will increase. This may not be linear though. As the surrounding air temperature increases, resistances of semiconductors, wires and traces increase. This will decrease the efficiency of the application, and more power will be converted into heat, and will increase the silicon junction temperatures further. Forced Airflow: Forced air can drastically reduce the device junction temperature. Air flow reduces the hot spots within a design. Warm airflow is often much better than a lower ambient temperature with no airflow. 14 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 External Components: Choose components that are efficient, and you can reduce the mutual heating between devices. PCB design with thermal performance in mind: The PCB design is a very important step in the thermal design procedure. The LM3410 is available in three package options (5-pin SOT-23, 8-pin MSOP-PowerPad and 6-pin WSON). The options are electrically the same, but difference between the packages is size and thermal performance. The WSON and MSOP-PowerPad have thermal Die Attach Pads (DAP) attached to the bottom of the packages, and are therefore capable of dissipating more heat than the SOT-23 package. It is important that the customer choose the correct package for the application. A detailed thermal design procedure has been included in this data sheet. This procedure will help determine which package is correct, and common applications will be analyzed. There is one significant thermal PCB layout design consideration that contradicts a proper electrical PCB layout design consideration. This contradiction is the placement of external components that dissipate heat. The greatest external heat contributor is the external Schottky diode. It would be nice if you were able to separate by distance the LM3410 from the Schottky diode, and thereby reducing the mutual heating effect. This will however create electrical performance issues. It is important to keep the LM3410, the output capacitor, and Schottky diode physically close to each other (see PCB layout guidelines). The electrical design considerations outweigh the thermal considerations. Other factors that influence thermal performance are thermal vias, copper weight, and number of board layers. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 15 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com Thermal Definitions Heat energy is transferred from regions of high temperature to regions of low temperature via three basic mechanisms: radiation, conduction and convection. Radiation: Electromagnetic transfer of heat between masses at different temperatures. Conduction: Transfer of heat through a solid medium. Convection: Transfer of heat through the medium of a fluid; typically air. Conduction and Convection will be the dominant heat transfer mechanism in most applications. RθJA: Thermal impedance from silicon junction to ambient air temperature. RθJC: Thermal impedance from silicon junction to device case temperature. CθJC: Thermal Delay from silicon junction to device case temperature. CθCA: Thermal Delay from device case to ambient air temperature. RθJA and RθJC: These two symbols represent thermal impedances, and most data sheets contain associated values for these two symbols. The units of measurement are °C/Watt. RθJA is the sum of smaller thermal impedances (see simplified thermal model Figure 21 and Figure 22). Capacitors within the model represent delays that are present from the time that power and its associated heat is increased or decreased from steady state in one medium until the time that the heat increase or decrease reaches steady state in the another medium. The datasheet values for these symbols are given so that one might compare the thermal performance of one package against another. To achieve a comparison between packages, all other variables must be held constant in the comparison (PCB size, copper weight, thermal vias, power dissipation, VIN, VOUT, load current etc). This does shed light on the package performance, but it would be a mistake to use these values to calculate the actual junction temperature in your application. LM3410 Thermal Models Heat is dissipated from the LM3410 and other devices. The external loss elements include the Schottky diode, inductor, and loads. All loss elements will mutually increase the heat on the PCB, and therefore increase each other’s temperatures. L1 D1 IL(t) VOUT(t) VIN Q1 C1 Figure 21. Thermal Schematic 16 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 RTCASE-AMB TCASE CTCASE-AMB RTJ-CASE CTJ-CASE INTERNAL PDISS SMALL LARGE PDISS-TOP TAMBIENT PDISS-PCB TJUNCTION RTJ-PCB CTJ-PCB DEVICE EXTERNAL PDISS RTPCB-AMB TPCB CTPCB-AMB PCB Figure 22. Associated Thermal Model Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 17 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com Calculating Efficiency and Junction Temperature We will talk more about calculating proper junction temperature with relative certainty in a moment. For now we need to describe how to calculate the junction temperature and clarify some common misconceptions. TJ - TA RTJA = PDissipation (14) A common error when calculating RθJA is to assume that the package is the only variable to consider. RθJA [variables]: • Input Voltage, Output Voltage, Output Current, RDS(ON) • Ambient temperature and air flow • Internal and External components power dissipation • Package thermal limitations • PCB variables (copper weight, thermal via’s, layers component placement) Another common error when calculating junction temperature is to assume that the top case temperature is the proper temperature when calculating RθJC. RθJC represents the thermal impedance of all six sides of a package, not just the top side. This document will refer to a thermal impedance called RΨJC. RΨJC represents a thermal impedance associated with just the top case temperature. This will allow one to calculate the junction temperature with a thermal sensor connected to the top case. The complete LM3410 Boost converter efficiency can be calculated in the following manner. POUT K= PIN or K= POUT POUT + PLOSS (15) Power loss (PLOSS) is the sum of two types of losses in the converter, switching and conduction. Conduction losses usually dominate at higher output loads, where as switching losses remain relatively fixed and dominate at lower output loads. Losses in the LM3410 Device: PLOSS = PCOND + PSW + PQ Where • PQ = quiescent operating power loss (16) Conversion ratio of the Boost Converter with conduction loss elements inserted: VOUT VIN § · ¨ ¸ c · § 1 ¸ 1 ¨ D x VD ¸ ¨ 1= ¨ ¸ ¨ c + (D x R DSON) ¸ R D © VIN ¹ ¨ 1 + DCR ¸ ¨ ¸ 2 c R D © ¹ OUT Where • ROUT = RDCR = Inductor series resistance (17) VOUT ILED (18) One can see that if the loss elements are reduced to zero, the conversion ratio simplifies to: 18 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com VOUT VIN SNVS541G – OCTOBER 2007 – REVISED MAY 2013 1 = '¶ (19) And we know: VOUT VIN = K '¶ (20) Therefore: K = Dc VOUT VIN § Dc x VD · 1¨ ¸ V ¨ ¸ IN =¨ + (D x R DSON) ¸ R ¨ 1 + DCR ¸ ¨ ¸ 2 c R D ¹ © OUT (21) Calculations for determining the most significant power losses are discussed below. Other losses totaling less than 2% are not discussed. A simple efficiency calculation that takes into account the conduction losses is shown below: § Dc x VD · 1¨ ¸ V ¨ ¸ IN K|¨ + (D x R DSON) ¸ R ¨ 1 + DCR ¸ ¨ ¸ 2 c R D ¹ © OUT (22) The diode, NMOS switch, and inductor DCR losses are included in this calculation. Setting any loss element to zero will simplify the equation. VD is the forward voltage drop across the Schottky diode. It can be obtained from the manufacturer’s Electrical Characteristics section of the data sheet. The conduction losses in the diode are calculated as follows: PDIODE = VD x ILED (23) Depending on the duty cycle, this can be the single most significant power loss in the circuit. Care should be taken to choose a diode that has a low forward voltage drop. Another concern with diode selection is reverse leakage current. Depending on the ambient temperature and the reverse voltage across the diode, the current being drawn from the output to the NMOS switch during time D could be significant, this may increase losses internal to the LM3410 and reduce the overall efficiency of the application. Refer to Schottky diode manufacturer’s data sheets for reverse leakage specifications, and typical applications within this data sheet for diode selections. Another significant external power loss is the conduction loss in the input inductor. The power loss within the inductor can be simplified to: PIND = IIN2RDCR (24) Or §I 2 R · PIND = ¨ O DCR ¸ ¨ D' ¸ © ¹ (25) The LM3410 conduction loss is mainly associated with the internal power switch: PCOND-NFET = I2SW-rms x RDSON x D (26) Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 19 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com 'i IIN ISW(t) t Figure 23. LM3410 Switch Current Isw-rms = IIND D x 1 + 1 3 'i IIND 2 | IIND D (27) (small ripple approximation) PCOND-NFET = IIN2 x RDSON x D (28) Or 2 §I · PCOND - NFET = ¨ LED¸ x RDSON x D © D' ¹ (29) The value for RDSON should be equal to the resistance at the junction temperature you wish to analyze. As an example, at 125°C and RDSON = 250 mΩ (See typical graphs for value). Switching losses are also associated with the internal power switch. They occur during the switch on and off transition periods, where voltages and currents overlap resulting in power loss. The simplest means to determine this loss is to empirically measuring the rise and fall times (10% to 90%) of the switch at the switch node: PSWR = 1/2(VOUT x IIN x fSW x tRISE) PSWF = 1/2(VOUT x IIN x fSW x tFALL) PSW = PSWR + PSWF (30) (31) (32) Table 4. Typical Switch-Node Rise and Fall Times VIN VOUT tRISE tFALL 3V 5V 6nS 4nS 5V 12V 6nS 5nS 3V 12V 8nS 7nS 5V 18V 10nS 8nS Quiescent Power Losses IQ is the quiescent operating current, and is typically around 1.5 mA. PQ = IQ x VIN (33) RSET Power Loss PRSET = VFB2 RSET (34) Example Efficiency Calculation: Operating Conditions: 5 x 3.3V LEDs + 190mVREF ≊ 16.7V 20 (35) Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 Table 5. Operating Conditions VIN 3.3V VOUT 16.7V ILED 50mA VD 0.45V fSW 1.60MHz IQ 3mA tRISE 10nS tFALL 10nS RDSON 225mΩ LDCR 75mΩ D 0.82 IIN 0.31A ΣPCOND + PSW + PDIODE + PIND + PQ = PLOSS (36) Quiescent Power Loss: PQ = IQ x VIN = 10 mW (37) Switching Power Loss: PSWR = 1/2(VOUT x IIN x fSW x tRISE) ≊ 40 mW PSWF = 1/2(VOUT x IIN x fSW x tFALL) ≊ 40 mW PSW = PSWR + PSWF = 80 mW (38) (39) (40) Internal NFET Power Loss: RDSON = 225 mΩ PCONDUCTION = IIN2 x D x RDSON = 17 mW IIN = 310 mA (41) (42) (43) Diode Loss: VD = 0.45V PDIODE = VD x ILED = 23 mW (44) (45) Inductor Power Loss: RDCR = 75 mΩ PIND = IIN2 x RDCR = 7 mW (46) (47) Total Power Losses are: Table 6. Power Loss Tabulation VIN 3.3V VOUT 16.7V ILED 50mA POUT 825W VD 0.45V PDIODE 23mW fSW 1.6MHz IQ 10nS PSWR 40mW tRISE 10nS PSWF 40mW IQ 3mA PQ 10mW RDSON 225mΩ PCOND 17mW LDCR 75mΩ PIND 7mW D 0.82 η 85% PLOSS 137mW Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 21 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com PINTERNAL = PCOND + PSW = 107 mW (48) Calculating RθJA and RΨJC TJ - TCase TJ - TA : R <JC = R TJA = PDissipation PDissipation (49) We now know the internal power dissipation, and we are trying to keep the junction temperature at or below 125°C. The next step is to calculate the value for RθJA and/or RΨJC. This is actually very simple to accomplish, and necessary if you think you may be marginal with regards to thermals or determining what package option is correct. The LM3410 has a thermal shutdown comparator. When the silicon reaches a temperature of 165°C, the device shuts down until the temperature drops to 150°C. Knowing this, one can calculate the RθJA or the RΨJC of a specific application. Because the junction to top case thermal impedance is much lower than the thermal impedance of junction to ambient air, the error in calculating RΨJC is lower than for RθJA . However, you will need to attach a small thermocouple onto the top case of the LM3410 to obtain the RΨJC value. Knowing the temperature of the silicon when the device shuts down allows us to know three of the four variables. Once we calculate the thermal impedance, we then can work backwards with the junction temperature set to 125°C to see what maximum ambient air temperature keeps the silicon below the 125°C temperature. Procedure: Place your application into a thermal chamber. You will need to dissipate enough power in the device so you can obtain a good thermal impedance value. Raise the ambient air temperature until the device goes into thermal shutdown. Record the temperatures of the ambient air and/or the top case temperature of the LM3410. Calculate the thermal impedances. Example from previous calculations (SOT-23 Package): PINTERNAL = 107 mW TA @ Shutdown = 155°C TC @ Shutdown = 159°C R TJA = TJ - TA PDissipation : R <JC = (50) (51) (52) TJ - TCase-Top PDissipation RθJA SOT-23 = 93°C/W RΨJC SOT-23 = 56°C/W (53) (54) (55) Typical WSON and MSOP-PowerPad typical applications will produce RθJA numbers in the range of 50°C/W to 65°C/W, and RΨJC will vary between 18°C/W and 28°C/W. These values are for PCB’s with two and four layer boards with 0.5 oz copper, and four to six thermal vias to bottom side ground plane under the DAP. The thermal impedances calculated above are higher due to the small amount of power being dissipated within the device. Note: To use these procedures it is important to dissipate an amount of power within the device that will indicate a true thermal impedance value. If one uses a very small internal dissipated value, one can see that the thermal impedance calculated is abnormally high, and subject to error. Figure 24 shows the nonlinear relationship of internal power dissipation vs . RθJA. 22 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 Figure 24. RθJA vs Internal Dissipation For 5-pin SOT-23 package typical applications, RθJA numbers will range from 80°C/W to 110°C/W, and RΨJC will vary between 50°C/W and 65°C/W. These values are for PCB’s with two and four layer boards with 0.5 oz copper, with two to four thermal vias from GND pin to bottom layer. Here is a good rule of thumb for typical thermal impedances, and an ambient temperature maximum of 75°C: If your design requires that you dissipate more than 400mW internal to the LM3410, or there is 750mW of total power loss in the application, it is recommended that you use the 6-pin WSON or the 8-pin MSOP-PowerPad package with the exposed DAP. SEPIC Converter The LM3410 can easily be converted into a SEPIC converter. A SEPIC converter has the ability to regulate an output voltage that is either larger or smaller in magnitude than the input voltage. Other converters have this ability as well (CUK and Buck-Boost), but usually create an output voltage that is opposite in polarity to the input voltage. This topology is a perfect fit for Lithium Ion battery applications where the input voltage for a single cell Li-Ion battery will vary between 2.7V and 4.5V and the output voltage is somewhere in between. Most of the analysis of the LM3410 Boost Converter is applicable to the LM3410 SEPIC Converter. SEPIC Design Guide: SEPIC Conversion ratio without loss elements: VOUT VIN = D '¶ (56) Therefore: D= VOUT VOUT + VIN (57) Small ripple approximation: In a well-designed SEPIC converter, the output voltage, and input voltage ripple, the inductor ripple IL1 and IL2 is small in comparison to the DC magnitude. Therefore it is a safe approximation to assume a DC value for these components. The main objective of the Steady State Analysis is to determine the steady state duty-cycle, voltage and current stresses on all components, and proper values for all components. In a steady-state converter, the net volt-seconds across an inductor after one cycle will equal zero. Also, the charge into a capacitor will equal the charge out of a capacitor in one cycle. Therefore: Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 23 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 I L2 www.ti.com § D' · = ¨ ¸ x I L1 © D¹ and IL1 = §D· x ¨ D' ¸ © ¹ ILED (58) Substituting IL1 into IL2 IL2 = ILED (59) The average inductor current of L2 is the average output load. VL(t) AREA 1 t (s) AREA 2 DTS TS Figure 25. Inductor Volt-Sec Balance Waveform Applying Charge balance on C1: VC3 = D' ( VOUT) D (60) Since there are no DC voltages across either inductor, and capacitor C3 is connected to Vin through L1 at one end, or to ground through L2 on the other end, we can say that VC3 = VIN (61) Therefore: VIN = D' ( VOUT) D (62) This verifies the original conversion ratio equation. It is important to remember that the internal switch current is equal to IL1 and IL2 during the D interval. Design the converter so that the minimum ensured peak switch current limit (2.1A) is not exceeded. 24 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 VIN L1 LM3410 C1 1 6 2 5 3 4 VO D1 C3 C2 L2 HB/OLED R2 R1 Figure 26. HB/OLED SEPIC CONVERTER Schematic Steady State Analysis with Loss Elements i L1( t ) i sw iC1( t ) vC1( t ) + i D1( t ) vD1( t ) i L 2( t ) VIN i C2( t ) vL2( t ) + - + R L1 vL1( t ) + vC2( t ) vO( t ) - + R on R L2 Figure 27. SEPIC Simplified Schematic Using inductor volt-second balance and capacitor charge balance, the following equations are derived: IL2 = (ILED) (63) and IL1 = (ILED) x (D/D') VOUT VIN §D· = ¨¨ ' ¸¸ ©D ¹ (64) § · ¨ ¸ 1 ¨ ¸ ¨ ¸ 2· § § · · § V R R ¨ ¨1+ D + R L2 ¸ + ¨ D ¸ §¨ ON ·¸ + ¨ D ¸ §¨ L1 ·¸¸ ¨ ¨© VOUT R ¸¹ ¨ ' 2 ¸ © R ¹ ¨ ' 2 ¸ © R ¹¸ ©D ¹ ©D ¹ ¨ ¸ © ¹ (65) Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 25 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 ROUT = www.ti.com VOUT ILED (66) Therefore: § · ¨ ¸ 1 ¨ ¸ K= ¨§ ¸ 2· § § · · V R R R D D § · · § ¸ ¨ L1 ¸ ¸ ¸ ¨ ON ¸ + ¨ ¨ ¨1+ D + L2 ¸ + ¨ ¨ ¨© VOUT ROUT¸¹ ¨ D' 2 ¸ ©ROUT ¹ ¨ D' 2 ¸ ©ROUT¹ ¸ © © ¹ ¹ ¨ ¸ © ¹ (67) One can see that all variables are known except for the duty cycle (D). A quadratic equation is needed to solve for D. A less accurate method of determining the duty cycle is to assume efficiency, and calculate the duty cycle. VOUT VIN = § D ·xK ¨1 - D¸ © ¹ (68) VOUT · § D=¨ ¸ ©(VIN x K) +VOUT¹ (69) Table 7. Efficiencies for Typical SEPIC Applications VIN 2.7V VIN 3.3V VIN 5V VOUT 3.1V VOUT 3.1V VOUT 3.1V IIN 770mA IIN 600mA IIN 375mA ILED 500mA ILED 500mA ILED 500mA η 75% η 80% η 83% SEPIC Converter PCB Layout The layout guidelines described for the LM3410 Boost-Converter are applicable to the SEPIC OLED Converter. Figure 28 is a proper PCB layout for a SEPIC Converter. LED1 VO PGND C2 R1 L2 D1 FB DIM 4 3 AGND 5 2 6 1 VIN C1 C3 PGND SW L1 VIN Figure 28. HB/OLED SEPIC PCB Layout 26 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 LM3410X SOT-23 Design Example 1: 5 x 1206 Series LED String Application D1 L1 LEDs VIN LM3410 DIMM C1 4 3 2 R2 5 C2 1 R1 Figure 29. LM3410X (1.6MHz): VIN = 2.7V to 5.5V, 5 x 3.3V LEDs, (VOUT ≊ 16.5V) ILED ≊ 50mA Part ID Part Value Manufacturer Part Number U1 2.8A ISW LED Driver TI LM3410XMF C1, Input Cap 10µF, 6.3V, X5R TDK C2012X5R0J106M C2 Output Cap 2.2µF, 25V, X5R TDK C2012X5R1E225M D1, Catch Diode 0.4Vf Schottky 500mA, 30VR Diodes Inc MBR0530 L1 10µH 1.2A Coilcraft DO1608C-103 R1 4.02Ω, 1% Vishay CRCW08054R02F R2 100kΩ, 1% Vishay CRCW08051003F LED's SMD-1206, 50mA, Vf ≊ 3 .6V Lite-On LTW-150k Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 27 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com LM3410Y SOT-23 Design Example 2: 5 x 1206 Series LED String Application D1 L1 LEDs VIN LM3410 DIMM C1 4 3 2 R2 5 C2 1 R1 Figure 30. LM3410Y (525kHz): VIN = 2.7V to 5.5V, 5 x 3.3V LEDs, (VOUT ≊ 16.5V) ILED ≊ 50mA 28 Part ID Part Value Manufacturer Part Number U1 2.8A ISW LED Driver TI LM3410YMF C1, Input Cap 10µF, 6.3V, X5R TDK C2012X5R0J106M C2 Output Cap 2.2µF, 25V, X5R TDK C2012X5R1E225M D1, Catch Diode 0.4Vf Schottky 500mA, 30VR Diodes Inc MBR0530 L1 15µH 1.2A Coilcraft DO1608C-153 R1 4.02Ω, 1% Vishay CRCW08054R02F R2 100kΩ, 1% Vishay CRCW08051003F LED's SMD-1206, 50mA, Vf ≊ 3 .6V Lite-On LTW-150k Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 LM3410X WSON Design Example 3: 7 LEDs x 5 LED String Backlighting Application L1 L EDs D1 VIN LM3410 C1 R2 1 6 2 5 3 4 I LED DIMM C2 I SET R1 Figure 31. LM3410X (1.6MHz): VIN = 2.7V to 5.5V, 7 x 5 x 3.3V LEDs, (VOUT ≊ 16.7V), ILED ≊ 25mA Part ID Part Value Manufacturer Part Number U1 2.8A ISW LED Driver TI LM3410XSD C1, Input Cap 10µF, 6.3V, X5R TDK C2012X5R0J106M C2 Output Cap 4.7µF, 25V, X5R TDK C2012X5R1E475M D1, Catch Diode 0.4Vf Schottky 500mA, 30VR Diodes Inc MBR0530 L1 8.2µH, 2A Coilcraft MSS6132-822ML R1 1.15Ω, 1% Vishay CRCW08051R15F R2 100kΩ, 1% Vishay CRCW08051003F LED's SMD-1206, 50mA, Vf ≊ 3 .6V Lite-On LTW-150k Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 29 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com LM3410X WSON Design Example 4: 3 x HB LED String Application L1 D1 VIN LM3410 C1 R2 DIMM 1 6 2 5 3 4 HB - LEDs C2 R3 R1 Figure 32. LM3410X (1.6MHz): VIN = 2.7V to 5.5V, 3 x 3.4V LEDs, (VOUT ≊ 11V) ILED ≊ 340mA 30 Part ID Part Value Manufacturer U1 2.8A ISW LED Driver TI LM3410XSD C1, Input Cap 10µF, 6.3V, X5R TDK C2012X5R0J106M C2 Output Cap 2.2µF, 25V, X5R TDK C2012X5R1E225M D1, Catch Diode 0.4Vf Schottky 500mA, 30VR Diodes Inc MBR0530 L1 10µH 1.2A Coilcraft DO1608C-103 R1 1.00Ω, 1% Vishay CRCW08051R00F R2 100kΩ, 1% Vishay CRCW08051003F R3 1.50Ω, 1% Vishay CRCW08051R50F HB - LED's 340mA, Vf ≊ 3 .6V CREE XREWHT-L1-0000-0901 Submit Documentation Feedback Part Number Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 LM3410Y SOT-23 Design Example 5: 5 x 1206 Series LED String Application with OVP L1 L EDs D1 VIN DIMM LM3410 C1 OVP 4 R2 3 C2 2 5 D2 1 R3 R1 Figure 33. LM3410Y (525kHz): VIN = 2.7V to 5.5V, 5 x 3.3V LEDs, (VOUT ≊ 16.5V) ILED ≊ 50mA Part ID Part Value Manufacturer U1 2.8A ISW LED Driver TI Part Number LM3410YMF C1 Input Cap 10µF, 6.3V, X5R TDK C2012X5R0J106M C2 Output Cap 2.2µF, 25V, X5R TDK C2012X5R1E225M D1, Catch Diode 0.4Vf Schottky 500mA, Diodes Inc MBR0530 D2 18V Zener diode Diodes Inc 1N4746A L1 15µH, 0.70A TDK VLS4012T-150MR65 R1 4.02Ω, 1% Vishay CRCW08054R02F R2 100kΩ, 1% Vishay CRCW08051003F R3 100Ω, 1% Vishay CRCW06031000F LED’s SMD-1206, 50mA, Vf ≊ 3 .6V Lite-On LTW-150k Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 31 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com LM3410X SEPIC WSON Design Example 6: HB/OLED Illumination Application VIN L1 VO D1 C3 LM3410 C1 1 6 2 5 3 4 C2 L2 HB/OLED R2 R1 Figure 34. LM3410X (1.6MHz): VIN = 2.7V to 5.5V, (VOUT ≊ 3.8V) ILED ≊ 300mA 32 Part ID Part Value Manufacturer U1 2.8A ISW LED Driver TI Part Number LM3410XSD C1 Input Cap 10µF, 6.3V, X5R TDK C2012X5R0J106K C2 Output Cap 10µF, 6.3V, X5R TDK C2012X5R0J106K C2012X5R1E225M C3 Cap 2.2µF, 25V, X5R TDK D1, Catch Diode 0.4Vf, Schottky 1A, 20VR Diodes Inc DFLS120L L1 and L2 4.7µH 3A Coilcraft MSS6132-472 R1 665 mΩ, 1% Vishay CRCW0805R665F R2 100kΩ, 1% Vishay CRCW08051003F HB - LED’s 350mA, Vf ≊ 3 .6V CREE XREWHT-L1-0000-0901 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 LM3410X WSON Design Example 7: Boost Flash Application VIN L1 D1 VO LM3410 C1 1 6 2 5 3 4 C2 LEDs FLASH CTRL R1 Figure 35. LM3410X (1.6MHz): VIN = 2.7V to 5.5V, (VOUT ≊ 8V) ILED ≊ 1.0A Pulsed Part ID Part Value Manufacturer U1 2.8A ISW LED Driver TI Part Number LM3410XSD C1 Input Cap 10µF, 6.3V, X5R TDK C2012X5R0J106M C2012X5R1A106M C2 Output Cap 10µF,16V, X5R TDK D1, Catch Diode 0.4Vf Schottky 500mA, 30VR Diodes Inc MBR0530 L1 4.7µH, 3A Coilcraft MSS6132-472 R1 200mΩ, 1% Vishay CRCW0805R200F LED’s 500mA, Vf ≊ 3 .6V, IPULSE = 1.0A CREE XREWHT-L1-0000-0901 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 33 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com LM3410X SOT-23 Design Example 8: 5 x 1206 Series LED String Application with VIN > 5.5V D1 L1 LEDs VPWR DIMM C1 R3 LM3410 4 2 R2 5 D2 3 C2 1 C3 R1 Figure 36. LM3410X (1.6MHz): VPWR = 9V to 14V, (VOUT ≊ 16.5V) ILED ≊ 50mA 34 Part ID Part Value Mfg U1 2.8A ISW LED Driver TI Part Number LM3410XMF C1 Input VPWR Cap 10µF, 6.3V, X5R TDK C2012X5R0J106M C2 Output Cap 2.2µF, 25V, X5R TDK C2012X5R1E225M C1005X5R1C104K C2 Input VIN Cap 0.1µF, 6.3V, X5R TDK D1, Catch Diode 0.43Vf, Schotky, 0.5A, 30VR Diodes Inc MBR0530 L1 10µH 1.2A Coilcraft DO1608C-103 R1 4.02Ω, 1% Vishay CRCW08054R02F R2 100kΩ, 1% Vishay CRCW08051003F R3 576Ω, 1% Vishay CRCW08055760F D2 3.3V Zener, SOT-23 Diodes Inc BZX84C3V3 LED’s SMD-1206, 50mA, Vf ≊ 3 .6V Lite-On LTW-150k Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 LM3410X WSON Design Example 9: Camera Flash or Strobe Circuit Application VIN L1 C1 C3 VO D1 LM3410 1 6 2 5 3 4 L2 LED(s) R2 C2 Q2 R3 R1 R4 Q1 FLASH CTRL Figure 37. LM3410X (1.6MHz): VIN = 2.7V to 5.5, (VOUT ≊ 7.5V), ILED ≊ 1.5A Flash Part ID Part Value Mfg U1 2.8A ISW LED Driver TI Part Number LM3410XSD C1 Input VPWR Cap 10µF, 6.3V, X5R TDK C1608X5R0J106K C2 Output Cap 220µF, 10V, Tanatalum KEMET T491V2271010A2 C3 Cap 10µF, 16V, X5R TDK C3216X5R0J106K D1, Catch Diode 0.43Vf, Schotky, 1.0A, 20VR Diodes Inc DFLS120L L1 3.3µH 2.7A Coilcraft MOS6020-332 R1 1.0kΩ, 1% Vishay CRCW08051001F R2 37.4kΩ, 1% Vishay CRCW08053742F R3 100kΩ, 1% Vishay CRCW08051003F R4 0.15Ω, 1% Vishay CRCW0805R150F Q1, Q2 30V, ID = 3.9A ZETEX ZXMN3A14F LED’s 500mA, Vf ≊ 3 .6V, IPULSE = 1.5A CREE XREWHT-L1-0000-00901 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 35 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com LM3410X SOT-23 Design Example 10: 5 x 1206 Series LED String Application with VIN and VPWR Rail > 5.5V L1 D1 LEDs VPWR LM3410 DIMM C1 4 2 R2 VIN 3 5 C2 1 C3 R1 Figure 38. LM3410X (1.6MHz): VPWR = 9V to 14V, VIN = 2.7V to 5.5V, (VOUT ≊ 16.5V) ILED ≊ 50mA 36 Part ID Part Value Mfg Part Number U1 2.8A ISW LED Driver TI LM3410XMF C1 Input VPWR Cap 10µF, 6.3V, X5R TDK C2012X5R0J106M C2 VOUT Cap 2.2µF, 25V, X5R TDK C2012X5R1E225M C3 Input VIN Cap 0.1µF, 6.3V, X5R TDK C1005X5R1C104K D1, Catch Diode 0.43Vf, Schotky, 0.5A, 30VR Diodes Inc MBR0530 L1 10µH 1.5A Coilcraft DO1608C-103 R1 4.02Ω, 1% Vishay CRCW08054R02F R2 100kΩ, 1% Vishay CRCW08051003F LED’s SMD-1206, 50mA, Vf ≊ 3 .6V Lite-On LTW-150k Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 LM3410X WSON Design Example 11: Boot-Strap Circuit to Extend Battery Life VIN L1 VO D1 C4 D2 C1 LM3410 C3 1 6 2 5 3 4 L2 C2 R3 D3 R1 Figure 39. LM3410X (1.6MHz): VIN = 1.9V to 5.5V, VIN > 2.3V (TYP) for Startup, ILED ≊ 300mA Part ID Part Value Mfg Part Number U1 2.8A ISW LED Driver TI LM3410XSD C1 Input VPWR Cap 10µF, 6.3V, X5R TDK C1608X5R0J106K C2 VOUT Cap 10µF, 6.3V, X5R TDK C1608X5R0J106K C3 Input VIN Cap 0.1µF, 6.3V, X5R TDK C1005X5R1C104K D1, Catch Diode 0.43Vf, Schotky, 1.0A, 20VR Diodes Inc DFLS120L D2, D3 Dual Small Signal Schotky Diodes Inc BAT54CT L1, L2 3.3µH 3A Coilcraft MOS6020-332 R1 665 mΩ, 1% Vishay CRCW0805R665F R3 100kΩ, 1% Vishay CRCW08051003F HB/OLED 3.4Vf, 350mA TT Electronics/Optek OVSPWBCR44 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q 37 LM3410, LM3410Q SNVS541G – OCTOBER 2007 – REVISED MAY 2013 www.ti.com REVISION HISTORY Changes from Revision F (May 2013) to Revision G • 38 Page Changed layout of National Data Sheet to TI format .......................................................................................................... 37 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM3410 LM3410Q PACKAGE OPTION ADDENDUM www.ti.com 2-May-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) LM3410XMF/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SSVB LM3410XMFE/NOPB ACTIVE SOT-23 DBV 5 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SSVB LM3410XMFX/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SSVB LM3410XMY/NOPB ACTIVE MSOPPowerPAD DGN 8 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SSXB LM3410XMYE/NOPB ACTIVE MSOPPowerPAD DGN 8 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SSXB LM3410XMYX/NOPB ACTIVE MSOPPowerPAD DGN 8 3500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SSXB LM3410XQMF/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SXUB LM3410XQMFX/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SXUB LM3410XSD/NOPB ACTIVE WSON NGG 6 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 3410X LM3410XSDE/NOPB ACTIVE WSON NGG 6 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 3410X LM3410XSDX/NOPB ACTIVE WSON NGG 6 4500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 3410X LM3410YMF/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SSZB LM3410YMFE/NOPB ACTIVE SOT-23 DBV 5 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SSZB LM3410YMFX/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SSZB LM3410YMY/NOPB ACTIVE MSOPPowerPAD DGN 8 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 STAB LM3410YMYE/NOPB ACTIVE MSOPPowerPAD DGN 8 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 STAB LM3410YMYX/NOPB ACTIVE MSOPPowerPAD DGN 8 3500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 STAB Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 2-May-2013 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) LM3410YQMF/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SXXB LM3410YQMFX/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SXXB LM3410YSD/NOPB ACTIVE WSON NGG 6 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 3410Y LM3410YSDE/NOPB ACTIVE WSON NGG 6 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 3410Y LM3410YSDX/NOPB ACTIVE WSON NGG 6 4500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 3410Y (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 2 Samples PACKAGE OPTION ADDENDUM www.ti.com 2-May-2013 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF LM3410, LM3410-Q1 : • Catalog: LM3410 • Automotive: LM3410-Q1 NOTE: Qualified Version Definitions: • Catalog - TI's standard catalog product • Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 3 PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) LM3410XMF/NOPB SOT-23 DBV 5 1000 178.0 8.4 LM3410XMFE/NOPB SOT-23 DBV 5 250 178.0 LM3410XMFX/NOPB SOT-23 DBV 5 3000 178.0 LM3410XMY/NOPB MSOPPower PAD DGN 8 1000 LM3410XMYE/NOPB MSOPPower PAD DGN 8 LM3410XMYX/NOPB MSOPPower PAD DGN W Pin1 (mm) Quadrant 3.2 3.2 1.4 4.0 8.0 Q3 8.4 3.2 3.2 1.4 4.0 8.0 Q3 8.4 3.2 3.2 1.4 4.0 8.0 Q3 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 250 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM3410XQMF/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM3410XQMFX/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM3410XSD/NOPB WSON NGG 6 1000 178.0 12.4 3.3 3.3 1.0 8.0 12.0 Q1 LM3410XSDE/NOPB WSON NGG 6 250 178.0 12.4 3.3 3.3 1.0 8.0 12.0 Q1 LM3410XSDX/NOPB WSON NGG 6 4500 330.0 12.4 3.3 3.3 1.0 8.0 12.0 Q1 LM3410YMF/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM3410YMFE/NOPB SOT-23 DBV 5 250 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM3410YMFX/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM3410YMY/NOPB MSOPPower PAD DGN 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM3410YMYE/NOPB MSOPPower PAD DGN 8 250 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM3410YMYX/NOPB MSOPPower PAD DGN 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM3410YQMF/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM3410YQMFX/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM3410YSD/NOPB WSON NGG 6 1000 178.0 12.4 3.3 3.3 1.0 8.0 12.0 Q1 LM3410YSDE/NOPB WSON NGG 6 250 178.0 12.4 3.3 3.3 1.0 8.0 12.0 Q1 LM3410YSDX/NOPB WSON NGG 6 4500 330.0 12.4 3.3 3.3 1.0 8.0 12.0 Q1 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM3410XMF/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM3410XMFE/NOPB SOT-23 DBV 5 250 210.0 185.0 35.0 LM3410XMFX/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 LM3410XMY/NOPB MSOP-PowerPAD DGN 8 1000 210.0 185.0 35.0 LM3410XMYE/NOPB MSOP-PowerPAD DGN 8 250 210.0 185.0 35.0 Pack Materials-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM3410XMYX/NOPB MSOP-PowerPAD DGN 8 3500 367.0 367.0 35.0 LM3410XQMF/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM3410XQMFX/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 LM3410XSD/NOPB WSON NGG 6 1000 210.0 185.0 35.0 LM3410XSDE/NOPB WSON NGG 6 250 210.0 185.0 35.0 LM3410XSDX/NOPB WSON NGG 6 4500 367.0 367.0 35.0 LM3410YMF/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM3410YMFE/NOPB SOT-23 DBV 5 250 210.0 185.0 35.0 LM3410YMFX/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 LM3410YMY/NOPB MSOP-PowerPAD DGN 8 1000 210.0 185.0 35.0 LM3410YMYE/NOPB MSOP-PowerPAD DGN 8 250 210.0 185.0 35.0 LM3410YMYX/NOPB MSOP-PowerPAD DGN 8 3500 367.0 367.0 35.0 LM3410YQMF/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM3410YQMFX/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 LM3410YSD/NOPB WSON NGG 6 1000 210.0 185.0 35.0 LM3410YSDE/NOPB WSON NGG 6 250 210.0 185.0 35.0 LM3410YSDX/NOPB WSON NGG 6 4500 367.0 367.0 35.0 Pack Materials-Page 3 MECHANICAL DATA DGN0008A MUY08A (Rev A) BOTTOM VIEW www.ti.com MECHANICAL DATA NGG0006A SDE06A (Rev A) www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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