TI LM21215MHE/NOPB

LM21215
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SNVS625E – FEBRUARY 2011 – REVISED MARCH 2013
15A High Efficiency Point of Load Synchronous Buck Regulator
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FEATURES
APPLICATIONS
•
•
1
2
•
•
•
•
•
•
•
•
•
•
•
Integrated 7.0 mΩ High Side and 4.3 mΩ Low
Side FET Switches
Adjustable Current Limit
Adjustable Output Voltage From 0.6V to VIN
(100% Duty Cycle Capable), ±1% Reference
Input Voltage Range 2.95V to 5.5V
500 kHz Fixed Switching Frequency
Startup Into Pre-Biased Loads
Output Voltage Tracking Capability
Wide Bandwidth Voltage Loop Error Amplifier
Adjustable Soft-Start With External Capacitor
Precision Enable Pin With Hysteresis
Integrated OVP, OTP, UVLO and Power-Good
Thermally Enhanced HTSSOP-20 Exposed Pad
Package
•
•
Broadband, Networking and Wireless
Communications
High-Performance FPGAs, ASICs and
Microprocessors
Simple to Design, High Efficiency Point of
Load Regulation From a 5V or 3.3V Bus
DESCRIPTION
The LM21215 is a monolithic synchronous point of
load buck regulator that is capable of delivering up to
15A of continuous output current while producing an
output voltage down to 0.6V with outstanding
efficiency. The device is optimized to work over an
input voltage range of 2.95V to 5.5V, making it suited
for a wide variety of low voltage systems. The voltage
mode control loop provides high noise immunity,
narrow duty cycle capability and can be compensated
to be stable with any type of output capacitance,
providing maximum flexibility and ease of use.
Simplified Application Circuit
HTSSOP-20
LOUT
5,6,7
VIN
PVIN
CIN
SW
11-16
RF
VOUT
COUT
4
CC3
AVIN
RFB1
CF
3
LM21215
FB
EN
optional
optional
COMP
RC2
19
18
CC1 RC1
RFB2
2 SS/
TRK
CSS
CC2
17
1
PGOOD
ILIM
RILIM
PGND AGND
8,9,10
20
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011–2013, Texas Instruments Incorporated
LM21215
SNVS625E – FEBRUARY 2011 – REVISED MARCH 2013
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DESCRIPTION (CONTINUED)
The LM21215 features internal over voltage protection (OVP) and resistor-programmable over-current protection
(OCP) for increased system reliability. A precision enable pin and integrated UVLO allow turn-on of the device to
be tightly controlled and sequenced. Startup inrush currents are limited by both an internally fixed and externally
adjustable soft-start circuit. Fault detection and supply sequencing are possible with the integrated power good
circuit.
The LM21215 is designed to work well in multi-rail power supply architectures. The output voltage of the device
can be configured to track an external voltage rail using the SS/TRK pin. If the output is pre-biased at startup, it
will not sink current, allowing the output to smoothly rise past the pre-biased voltage. The regulator is offered in a
20-pin HTSSOP package with an exposed pad that can be soldered to the PCB, eliminating the need for bulky
heatsinks.
Connection Diagram
Top View
20 AGND
ILIM 1
SS/TRK 2
19 FB
18 COMP
EN 3
AVIN 4
17 PGOOD
PVIN 5
16 SW
PVIN 6
EP
15 SW
PVIN 7
14 SW
PGND 8
13 SW
PGND 9
12 SW
PGND 10
11 SW
Figure 1. Top View
HTSSOP-20 Package
2
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PIN DESCRIPTIONS
Pins
Name
1
ILIM
Resistor-programmable current limit pin. A resistor connected to this pin and ground will set the value of
the rising current limit ICLR. Shorting this pin to AGND will program the device to the maximum possible
current limit.
2
SS/TRK
Soft-start control pin. An internal 2µA current source charges an external capacitor connected between
this pin and AGND to set the output voltage ramp rate during startup. This pin can also be used to
configure the tracking feature.
3
EN
Active high enable input for the device. If not used, the EN pin can be left open, which will go high due to
an internal current source.
4
AVIN
Analog input voltage supply that generates the internal bias. It is recommended to connect PVIN to AVIN
through a low pass RC filter to minimize the influence of input rail ripple and noise on the analog control
circuitry.
5,6,7
PVIN
Input voltage to the power switches inside the device. These pins should be connected together at the
device. A low ESR input capacitance should be located as close as possible to these pins.
8,9,10
PGND
Power ground pins for the internal power switches.
11-16
SW
17
PGOOD
18
COMP
19
FB
20
AGND
EP
Exposed Pad
Description
Switch node pins. These pins should be tied together locally and connected to the filter inductor.
Open-drain power good indicator.
Compensation pin is connected to the output of the voltage loop error amplifier.
Feedback pin is connected to the inverting input of the voltage loop error amplifier.
Quiet analog ground for the internal reference and bias circuitry.
Exposed metal pad on the underside of the package with an electrical and thermal connection to PGND.
It is recommended to connect this pad to the PC board ground plane in order to improve thermal
dissipation.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
PVIN
(1) (2)
(3)
−0.3V to +6V
, AVIN to GND
SW (4), EN, FB, COMP, PGOOD, SS/TRK to GND
−0.3V to PVIN + 0.3V
−65°C to 150°C
Storage Temperature
Lead Temperature (Soldering, 10 sec.)
260°C
ESD Rating, Human Body Model (5)
(1)
(2)
(3)
(4)
(5)
±2kV
Absolute Maximum Ratings indicate limits beyond witch damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
The PVIN pin can tolerate transient voltages up to 6.5 V for a period of up to 6ns. These transients can occur during the normal
operation of the device.
The SW pin can tolerate transient voltages up to 9.0 V for a period of up to 6ns, and -1.0V for a duration of 4ns. These transients can
occur during the normal operation of the device.
The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor to each pin.
Operating Ratings (1)
PVIN, AVIN to GND
+2.95V to +5.5V
−40°C to +125°C
Junction Temperature
θJA (2)
(1)
(2)
24°C/W
Absolute Maximum Ratings indicate limits beyond witch damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
Thermal measurements were performed on a 2x2 inch, 4 layer, 2 oz. copper outer layer, 1 oz.copper inner layer board with twelve 8 mil.
vias underneith the EP of the device and an additional sixteen 8 mil. vias under the unexposed package.
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Electrical Characteristics
Unless otherwise stated, the following conditions apply: VPVIN, AVIN = 5V. Limits in standard type are for TJ = 25°C only, limits
in bold face type apply over the junction temperature (TJ) range of −40°C to +125°C. Minimum and maximum limits are
specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C,
and are provided for reference purposes only.
Symbol
Parameter
Conditions
Min
Feedback pin voltage
VIN = 2.95V to 5.5V
-1%
Typ
Max
0.6
1%
Units
SYSTEM
VFB
ΔVOUT/ΔIOUT Load Regulation
ΔVOUT/ΔVIN
0.02
Line Regulation
V
%VOUT/A
0.1
%VOUT/V
RDSON HS
High Side Switch On Resistance
ISW = 12A
7
9.0
mΩ
RDSON LS
Low Side Switch On Resistance
ISW = 12A
4.3
6.0
mΩ
ICLR
HS Rising Switch Current Limit
RILIM = 16.5 kΩ
16.5
20
23.5
A
RILIM = 41.3 kΩ
8.5
10
11.5
ICLF
LS Falling Switch Current Limit
RILIM = 130 kΩ
3.8
RILIM = 16.5 kΩ
14.5
RILIM = 41.3 kΩ
7.5
RILIM = 130 kΩ
VZX
-8
12
mV
1.5
3
mA
50
70
µA
2.45
2.7
2.95
V
140
200
280
mV
-10
6
20
mV
1.3
1.9
2.5
µA
350
500
675
µs
Device reset to soft-start ramp
50
110
200
µs
Switching Frequency
475
500
525
kHz
IQ
Operating Quiescent Current
Shutdown Quiescent Current
VEN = 0V
VUVLO
AVIN Under Voltage Lockout
AVIN Rising
VUVLOHYS
AVIN Under Voltage Lockout Hysteresis
VTRACKOS
SS/TRACK PIN accuracy (VSS - VFB)
tINTSS
tRESETSS
3
Zero Cross Voltage
ISD
ISS
A
0 < VTRACK < 0.55V
Soft-Start Pin Source Current
Internal Soft-Start Ramp to Vref
CSS = 0
3
OSCILLATOR
fOSC
tHSBLANK
HS OCP blanking time
Rising edge of SW to ICLR
comparison
55
ns
tLSBLANK
LS OCP blanking time
Falling edge of SW to ICLF
comparison
400
ns
tZXBLANK
Zero Cross blanking time
Falling edge of SW to VZX
comparison
120
ns
Minimum HS on-time
140
ns
PWM Ramp p-p Voltage
0.8
V
95
dBV/V
11
MHz
tMINON
ΔVRAMP
ERROR AMPLIFIER
VOL
Error Amplifier Open Loop Voltage Gain
GBW
Error Amplifier Gain-Bandwidth Product
IFB
Feedback Pin Bias Current
ICOMP = -65µA to 1mA
VFB = 0.6V
1
nA
ICOMPSRC
COMP Output Source Current
1
mA
ICOMPSINK
COMP Output Sink Current
65
µA
POWERGOOD
VOVP
VOVPHYS
VUVP
VUVPHYS
4
Over Voltage Protection Rising Threshold
VFB Rising
Over Voltage Protection Hysteresis
VFB Falling
Under Voltage Protection Rising Threshold
VFB Rising
Under Voltage Protection Hysteresis
VFB Falling
105
112.5
120
2
82
90
%VFB
%VFB
97
%VFB
2.5
%VFB
tPGDGL
PGOOD Deglitch Low (OVP/UVP Condition
Duration to PGOOD Falling)
15
µs
tPGDGH
PGOOD Deglitch High (minimum low pulse)
12
µs
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Electrical Characteristics (continued)
Unless otherwise stated, the following conditions apply: VPVIN, AVIN = 5V. Limits in standard type are for TJ = 25°C only, limits
in bold face type apply over the junction temperature (TJ) range of −40°C to +125°C. Minimum and maximum limits are
specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C,
and are provided for reference purposes only.
Symbol
Parameter
Conditions
Min
Typ
Max
10
20
40
Units
SYSTEM
RPD
IPGOODLEAK
PGOOD Pull-down Resistance
PGOOD Leakage Current
VPGOOD = 5V
VIHENR
EN Pin Rising Threshold
VEN Rising
VENHYS
EN Pin Hysteresis
1
Ω
nA
LOGIC
IEN
EN Pin Pullup Current
VEN = 0V
1.20
1.35
1.45
V
50
110
180
mV
2
µA
165
°C
10
°C
THERMAL SHUTDOWN
TTHERMSD
Thermal Shutdown
TTHERMSDHYS Thermal Shutdown Hysteresis
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Typical Performance Characteristics
Unless otherwise specified: VIN = 5V, VOUT = 1.2V, L= 0.56µH (1.8mΩ RDCR), CSS = 33nF, TA = 25°C for efficiency curves,
loop gain plots and waveforms, and TJ = 25°C for all others.
Efficiency
100
Efficiency (VOUT = 3.3 V, Inductor P/N SER2010-02MLD)
100
VIN = 3.3V
VIN = 5.0V
98
99
98
EFFICIENCY (%)
94
92
90
88
86
97
96
95
94
93
84
92
82
91
80
90
0
3
6
9
12
OUTPUT CURRENT (A)
15
VIN = 4.0V
VIN = 5.5V
0
3
6
9
12
OUTPUT CURRENT (A)
Figure 2.
Figure 3.
Line Regulation
0.10
0.03
0.08
û OUTPUT VOLTAGE (%)
û OUTPUT VOLTAGE (%)
Load Regulation
0.04
0.02
0.01
0.00
-0.01
-0.02
VIN = 3.3V
VIN = 5.0V
-0.03
2
4
6
8
10
OUTPUT CURRENT (A)
0.06
0.04
0.02
0.00
-0.02
-0.04
-0.06
IOUT = 0A
IOUT = 12A
-0.08
-0.04
0
-0.10
3.0
12
3.5
4.0
4.5
5.0
INPUT VOLTAGE (V)
Figure 4.
Non-Switching IQTOTAL vs. VIN
Non-Switching IAVIN and IPVIN vs. Temperature
1.20
1.17
IAVIN(mA)
IPVIN+ IAVIN(mA)
1.4
1.3
1.2
1.1
3.5
4.0
4.5
5.0
INPUT VOLTAGE (V)
5.5
0.180
IAVIN
IPVIN
0.172
1.14
0.164
1.11
0.156
1.08
0.148
1.05
0.140
1.02
0.132
0.99
0.124
0.96
0.116
0.93
0.108
0.100
0.90
-40 -20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
Figure 6.
6
5.5
Figure 5.
1.5
1.0
3.0
15
IPVIN(mA)
EFFICIENCY (%)
96
Figure 7.
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Typical Performance Characteristics (continued)
Unless otherwise specified: VIN = 5V, VOUT = 1.2V, L= 0.56µH (1.8mΩ RDCR), CSS = 33nF, TA = 25°C for efficiency curves,
loop gain plots and waveforms, and TJ = 25°C for all others.
Enable Threshold and Hysteresis vs. Temperature
VFB(V)
VIHENR(V)
0.601
0.600
0.599
0.598
144
1.35
136
1.34
128
1.33
120
1.32
112
1.31
104
1.30
96
1.29
88
1.28
80
-40 -20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
Figure 8.
Figure 9.
UVLO Threshold and Hysteresis vs. Temperature
60
285
58
2.76
270
2.74
255
2.72
240
2.70
225
2.68
210
2.66
195
2.64
180
2.62
165
2.60
150
ENABLE LOW CURRENT ( A)
VUVLO(V)
Enable Low Current vs. Temperature
300
VUVLOHYS(mV)
V UVLO
V UVLOHYS
2.78
152
1.36
-40 -20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
2.80
160
V IHENR
V ENHYS
1.37
VENHYS(V)
VFB vs. Temperature
0.602
56
54
52
50
48
46
44
42
40
-40 -20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
Figure 10.
Figure 11.
OVP/UVP Threshold vs. Temperature
Minimum On-Time vs. Temperature
160
156
0.68
VUVP
VOVP
MINIMUM ON-TIME (nS)
VOVP,VUVP(V)
0.66
0.64
0.62
0.60
0.58
0.57
0.54
152
148
144
140
136
132
128
124
0.52
0.50
-40 -20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
Figure 12.
120
-40 -20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
Figure 13.
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Typical Performance Characteristics (continued)
Unless otherwise specified: VIN = 5V, VOUT = 1.2V, L= 0.56µH (1.8mΩ RDCR), CSS = 33nF, TA = 25°C for efficiency curves,
loop gain plots and waveforms, and TJ = 25°C for all others.
FET Resistance vs. Temperature
10
LOW SIDE
HIGH SIDE
9
8
10
7
9
6
8
5
7
4
6
3
5
2
4
-40 -20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
3.5
4.0
4.5
VIN(V)
5.0
Peak Current Limit (ICLR) vs. VIN
Peak Current Limit (ICLR) vs. Temperature
RILIM = 10 kΩ
23.0
RILIM = 24.9k
RILIM = 16.5k
CURRENT LIMIT (A)
19
18
17
16
15
22.0
21.5
21.0
20.5
20.0
19.5
14
3.0
VIN = 3.3V
VIN = 5.5V
22.5
20
19.0
3.5
4.0
4.5
VIN(V)
5.0
5.5
-40 -20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
Figure 16.
Figure 17.
Peak Current Limit (ICLR) vs. Temperature
RILIM = 61.9 kΩ
Load Transient Response
8.0
5.5
Figure 15.
21
ICLR(A)
3.0
Figure 14.
22
VIN = 3.3V
VIN = 5.5V
VOUT (50 mV/Div)
7.8
CURRENT LIMIT (A)
RILIM = 41.2k
RILIM = 74.9k
11
ICLR(A)
RDSON(m )
Peak Current Limit (ICLR) vs. VIN
12
7.6
7.4
7.2
IOUT (10A/Div)
7.0
6.8
6.6
-40 -20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
8
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Typical Performance Characteristics (continued)
Unless otherwise specified: VIN = 5V, VOUT = 1.2V, L= 0.56µH (1.8mΩ RDCR), CSS = 33nF, TA = 25°C for efficiency curves,
loop gain plots and waveforms, and TJ = 25°C for all others.
Figure 18.
Figure 19.
Output Voltage Ripple
(IOUT = 15A)
Startup with Prebiased Output
VOUT (500 mV/Div)
VOUT (10 mV/Div)
VPGOOD (5V/Div)
VENABLE (5V/Div)
2 ms/DIV
2 µs/DIV
Figure 20.
Figure 21.
Startup with SS/TRK Open Circuit
Startup with applied Track Signal
VOUT (500 mV/Div)
VOUT (500 mV/Div)
VPGOOD (5V/Div)
VTRACK (500 mV/Div)
VENABLE (5V/Div)
VPGOOD (5V/Div)
IOUT (10A/Div)
IOUT (10A/Div)
200 µs/DIV
200 ms/DIV
Figure 23.
Figure 22.
Output Over-Current Condition
(RILIM = 20 kΩ)
VPGOOD (5V/Div)
VOUT (1V/Div)
IL (10A/Div)
100 µs/DIV
Figure 24.
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Block Diagram
CURRENT
LIMIT
ILIM
Ilimit high
VREF
AVIN
PVIN
Over
temp
+
-
PVIN
UVLO
2.7V
+
-
SD
OR
Driver
Precision
enable
AVIN
1.35V
+
-
EN
Control
Logic
PWM
comparator
Zero-cross
AVIN
OSC
RAMP
+
-
+
-
PWM
SW
INT
SS
PVIN
+
SS/TRK
0.6V
EA
Driver
FB
OVP
COMP
0.68V
0.54V
+
-
Ilimit low
OR
Powerbad
+
-
PGND
UVP
AGND
OR
PGOOD
Operation Description
GENERAL
The LM21215 switching regulator features all of the functions necessary to implement an efficient low voltage
buck regulator using a minimum number of external components. This easy to use regulator features two
integrated switches and is capable of supplying up to 15A of continuous output current. The regulator utilizes
voltage mode control with trailing edge modulation to optimize stability and transient response over the entire
output voltage range. The device can operate at high switching frequency allowing use of a small inductor while
still achieving high efficiency. The precision internal voltage reference allows the output to be set as low as 0.6V.
Fault protection features include: current limiting, thermal shutdown, over voltage protection, and shutdown
capability. The device is available in the HTSSOP-20 package featuring an exposed pad to aid thermal
dissipation. The LM21215 can be used in numerous applications to efficiently step-down from a 5V or 3.3V bus.
PRECISION ENABLE
The enable (EN) pin allows the output of the device to be enabled or disabled with an external control signal.
This pin is a precision analog input that enables the device when the voltage exceeds 1.35V (typical). The EN pin
has 110 mV of hysteresis and will disable the output when the enable voltage falls below 1.24V (typical). If the
EN pin is not used, it can be left open, and will be pulled high by an internal 2 µA current source. Since the
enable pin has a precise turn-on threshold it can be used along with an external resistor divider network from VIN
to configure the device to turn-on at a precise input voltage.
10
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UVLO
The LM21215 has a built-in under-voltage lockout protection circuit that keeps the device from switching until the
input voltage reaches 2.7V (typical). The UVLO threshold has 200 mV of hysteresis that keeps the device from
responding to power-on glitches during start up. If desired the turn-on point of the supply can be changed by
using the precision enable pin and a resistor divider network connected to VIN as shown in Figure 29 in the
design guide.
CURRENT LIMIT
The LM21215 has programmable current limit protection to avoid dangerous current levels through the power
FETs and inductor. A current limit condition is met when the current through the high side FET exceeds the rising
current limit level (ICLR). The control circuitry will respond to this event by turning off the high side FET and
turning on the low side FET. This forces a negative voltage on the inductor, thereby causing the inductor current
to decrease. The high side FET will not conduct again until the lower current limit level (ICLF) is sensed on the low
side FET. At this point, the device will resume normal switching.
A current limit condition will cause the internal soft-start voltage to ramp downward. After the internal soft-start
ramps below the Feedback (FB) pin voltage, (nominally 0.6 V), FB will begin to ramp downward, as well. This
voltage foldback will limit the power consumption in the device, thereby protecting the device from continuously
supplying power to the load under a condition that does not fall within the device SOA. After the current limit
condition is cleared, the internal soft-start voltage will ramp up again. Figure 25 shows current limit behavior with
VSS, VFB, VOUT and VSW.
SHORT-CIRCUIT PROTECTION
In the unfortunate event that the output is shorted with a low impedance to ground, the LM21215 will limit the
current into the short by resetting the device. A short-circuit condition is sensed by a current-limit condition
coinciding with a voltage on the FB pin that is lower than 100 mV. When this condition occurs, the device will
begin its reset sequence, turning off both power FETs and discharging the soft-start capacitor after tRESETSS
(nominally 110 µs). The device will then attempt to restart. If the short-circuit condition still exists, it will reset
again, and repeat until the short-circuit is cleared. The reset prevents excess current flowing through the FETs in
a highly inefficient manner, potentially causing thermal damage to the device or the bus supply.
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Iclr
IL
Iclf
VSS
VFB
100 mV
VOUT
VSW
CURRENT LIMIT
SHORT-CIRCUIT
REMOVED
SHORT-CIRCUIT
Figure 25. Current Limit Conditions
THERMAL PROTECTION
Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum
junction temperature is exceeded. When activated, typically at 165°C, the LM21215 tri-states the power FETs
and resets soft start. After the junction cools to approximately 155°C, the device starts up using the normal start
up routine. This feature is provided to prevent catastrophic failures from accidental device overheating. Note that
thermal limit will not stop the die from operating above the specified maximum operating temperature,125°C. The
die should be kept under 125°C to ensure correct operation.
POWER GOOD FLAG
The PGOOD pin provides the user with a way to monitor the status of the LM21215. In order to use the PGOOD
pin, the application must provide a pull-up resistor to a desired DC voltage (i.e. Vin). PGOOD will respond to a
fault condition by pulling the PGOOD pin low with the open-drain output. PGOOD will pull low on the following
conditions: 1) VFB moves above or below the VOVP or VUVP, respectively 2) The enable pin (EN) is brought below
the enable threshold 3) The device enters a pre-biased output condition (VFB>VSS).
Figure 26 shows the conditions that will cause PGOOD to fall.
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t RESETSS
V ss
0.6V
Vovp
VOVPHYS
VFB
Vuvp
VUVPHYS
VEN
V PGOOD
V SW
OVP
UVP
DISABLE
tPGDGL
PRE-BIASED
STARTUP
t PGDGH
Figure 26. PGOOD Conditions
LIGHT LOAD OPERATION
The LM21215 offers increased efficiency when operating at light loads. Whenever the load current is reduced to
a point where the peak to peak inductor ripple current is greater than two times the load current, the device will
enter the diode emulation mode preventing significant negative inductor current. The point at which this occurs is
the critical conduction boundary and can be calculated by the following equation:
IBOUNDARY =
(VIN ± VOUT) x D
2 x L x fSW
(1)
Several diagrams are shown in Figure 27 illustrating continuous conduction mode (CCM), discontinuous
conduction mode (DCM), and the boundary condition.
It can be seen that in diode emulation mode, whenever the inductor current reaches zero the SW node will
become high impedance. Ringing will occur on this pin as a result of the LC tank circuit formed by the inductor
and the parasitic capacitance at the node. If this ringing is of concern an additional RC snubber circuit can be
added from the switch node to ground.
At very light loads, usually below 100mA, several pulses may be skipped in between switching cycles, effectively
reducing the switching frequency and further improving light-load efficiency.
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Continuous Conduction Mode (CCM)
VIN
Time (s)
Inductor Current
Continuous Conduction Mode (CCM)
IAVERAGE
Inductor Current
Time (s)
DCM - CCM Boundary
IAVERAGE
Switchnode Voltage
Time (s)
Discontinuous Conduction Mode (DCM)
VIN
Inductor Current
Time (s)
Discontinuous Conduction Mode (DCM)
IPeak
Time (s)
Figure 27. Modes of Operation for LM21215
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DESIGN GUIDE
OUTPUT VOLTAGE
The first step in designing the LM21215 application is setting the output voltage. This is done by using a voltage
divider between VOUT and AGND, with the middle node connected to VFB . When operating under steady-state
conditions, the LM21215 will force VOUT such that VFB is driven to 0.6 V.
VOUT
LM21215
RFB1
0.6V
FB
RFB2
Figure 28. Setting VOUT
A good starting point for the lower feedback resistor, RFB2, is 10 kΩ. RFB1 can then be calculated with the
following equation:
VOUT =
RFB1 + RFB2
0.6V
RFB2
(2)
PRECISION ENABLE
The enable (EN) pin of the LM21215 allows the output to be toggled on and off. This pin is a precision analog
input. When the voltage exceeds 1.35V, the controller will try to regulate the output voltage as long as the input
voltage has exceeded the UVLO voltage of 2.70V. There is an internal current source connected to EN so if
enable is not used, the device will turn on automatically. If EN is not toggled directly the device can be
preprogrammed to turn on at a certain input voltage higher than the UVLO voltage. This can be done with an
external resistor divider from AVIN to EN and EN to AGND as shown below in Figure 29.
Input Power
Supply
RA
AVIN
LM21215
EN
VOUT
RB
Figure 29. Enable Startup Through Vin
The resistor values of RA and RB can be relatively sized to allow EN to reach the enable threshold voltage
depending on the input supply voltage. With the enable current source accounted for, the equation solving for RA
is shown below:
RB VPVIN - 1.35V
RA =
1.35V - IENRB
(3)
In the above equation, RA is the resistor from VIN to enable, RB is the resistor from enable to ground, IEN is the
internal enable pull-up current (2 µA) and 1.35V is the fixed precision enable threshold voltage. Typical values for
RB range from 10 kΩ to 100 kΩ.
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SOFT START
When EN has exceeded 1.35V, and both PVIN and AVIN have exceeded the UVLO threshold, the LM21215 will
begin charging the output linearly to the voltage level dictated by the feedback resistor network. The LM21215
employs a user adjustable soft start circuit to lengthen the charging time of the output set by a capacitor from the
soft start pin to ground. After enable exceeds 1.35V, an internal 2 µA current source begins to charge the soft
start capacitor. This allows the user to limit inrush currents due to a high output capacitance and not cause an
over current condition. Adding a soft-start capacitor can also reduce the stress on the input rail. Larger capacitor
values will result in longer startup times. Use the equation below to approximate the size of the soft-start
capacitor:
tSS x ISS
= CSS
0.6V
where
•
•
ISS is nominally 2 µA
tSS is the desired startup time
(4)
If VIN is higher than the UVLO level and enable is toggled high the soft start sequence will begin. There is a small
delay between enable transitioning high and the beginning of the soft start sequence. This delay allows the
LM21215 to initialize its internal circuitry. Once the output has charged to 90% of the nominal output voltage the
power good flag will transition high. This behavior is illustrated in Figure 30.
Voltage
90% VOUT
(VUVP)
VOUT
Enable
Delay
(tRESETSS)
0V
VEN
VPGOOD
Soft Start Time (tss)
Time
Figure 30. Soft Start Timing
As shown above, the size of the capacitor is influenced by the nominal feedback voltage level 0.6V, the soft-start
charging current ISS (2 µA), and the desired soft start time. If no soft-start capacitor is used then the LM21215
defaults to a minimum startup time of 500 µs. The LM21215 will not startup faster than 500µs. When enable is
cycled or the device enters UVLO, the charge developed on the soft-start capacitor is discharged to reset the
startup process. This also happens when the device enters short circuit mode from an over-current event.
INDUCTOR SELECTION
The inductor (L) used in the application will influence the ripple current and the efficiency of the system. The first
selection criteria is to define a ripple current, ΔIL. In a buck converter, it is typically selected to run between 20%
to 30% of the maximum output current. Figure 31 shows the ripple current in a standard buck converter operating
in continuous conduction mode. Larger ripple current will result in a smaller inductance value, which will lead to a
lower series resistance in the inductor, and improved efficiency. However, larger ripple current will also cause the
device to operate in discontinuous conduction mode at a higher average output current.
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VSW
VIN
Time
IL
IL AVG = IOUT
'IL
Time
Figure 31. Switch and Inductor Current Waveforms
Once the ripple current has been determined, the appropriate inductor size can be calculated using the following
equation:
L=
(VIN ± VOUT) D
üIL fSW
(5)
OUTPUT CAPACITOR SELECTION
The output capacitor, COUT, filters the inductor ripple current and provides a source of charge for transient load
conditions. A wide range of output capacitors may be used with the LM21215 that provide various advantages.
The best performance is typically obtained using ceramic, SP or OSCON type chemistries. Typical trade-offs are
that the ceramic capacitor provides extremely low ESR to reduce the output ripple voltage and noise spikes,
while the SP and OSCON capacitors provide a large bulk capacitance in a small volume for transient loading
conditions.
When selecting the value for the output capacitor, the two performance characteristics to consider are the output
voltage ripple and transient response. The output voltage ripple can be approximated by using the following
formula:
'VOUT
'IL x RESR +
1
8 x fSW x COUT
where
•
•
•
•
ΔVOUT (V) is the amount of peak to peak voltage ripple at the power supply output
RESR (Ω) is the series resistance of the output capacitor
fSW (Hz) is the switching frequency
COUT (F) is the output capacitance used in the design
(6)
The amount of output ripple that can be tolerated is application specific; however a general recommendation is to
keep the output ripple less than 1% of the rated output voltage. Keep in mind ceramic capacitors are sometimes
preferred because they have very low ESR; however, depending on package and voltage rating of the capacitor
the value of the capacitance can drop significantly with applied voltage. The output capacitor selection will also
affect the output voltage droop during a load transient. The peak droop on the output voltage during a load
transient is dependent on many factors; however, an approximation of the transient droop ignoring loop
bandwidth can be obtained using the following equation:
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VDROOP = 'IOUTSTEP x RESR +
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L x 'IOUTSTEP2
COUT x (VIN - VOUT)
where
•
•
•
•
•
•
•
COUT (F) is the minimum required output capacitance
L (H) is the value of the inductor
VDROOP (V) is the output voltage drop ignoring loop bandwidth considerations
ΔIOUTSTEP (A) is the load step change
RESR (Ω) is the output capacitor ESR
VIN (V) is the input voltage
VOUT (V) is the set regulator output voltage
(7)
Both the tolerance and voltage coefficient of the capacitor should be examined when designing for a specific
output ripple or transient droop target.
INPUT CAPACITOR SELECTION
Quality input capacitors are necessary to limit the ripple voltage at the VIN pin while supplying most of the switch
current during the on-time. Additionally, they help minimize input voltage droop in an output current transient
condition. In general, it is recommended to use a ceramic capacitor for the input as it provides both a low
impedance and small footprint. Use of a high grade dielectric for the ceramic capacitor, such as X5R or X7R, will
provide improved over-temperature performance and also minimize the DC voltage derating that occurs with Y5V
capacitors. The input capacitors CIN1 and CIN2 should be placed as close as possible to the PVIN and PGND
pins.
Non-ceramic input capacitors should be selected for RMS current rating and minimum ripple voltage. A good
approximation for the required ripple current rating is given by the relationship:
IIN-RMS = IOUT D(1 - D)
(8)
As indicated by the RMS ripple current equation, highest requirement for RMS current rating occurs at 50% duty
cycle. For this case, the RMS ripple current rating of the input capacitor should be greater than half the output
current. For best performance, low ESR ceramic capacitors should be placed in parallel with higher capacitance
capacitors to provide the best input filtering for the device.
When operating at low input voltages (3.3V or lower), additional capacitance may be necessary to protect from
triggering an under-voltage condition on an output current transient. This will depend on the impedance between
the input voltage supply and the LM21215, as well as the magnitude and slew rate of the output transient.
The AVIN pin requires a 1 µF ceramic capacitor to AGND and a 1Ω resistor to PVIN. This RC network will filter
inherent noise on PVIN from the sensitive analog circuitry connected to AVIN.
PROGRAMMABLE CURRENT LIMIT
A resisitor from the ILIM pin to GND will set the internal current limit on the LM21215. The current limit should be
programmed such that the peak inductor current (IL) does not trigger the current limit in normal operation. This
requires setting the resistor from the ILIM pin to GND (RILIM) to the appropriate value to allow the maximum ripple
current, ΔILMAX plus the DC output current through the high-side FET during normal operation. The maximum
ripple current can be described as:
For D > 0.5
'ILMAX =
(VINMAX - VOUTMIN) VOUTMIN
LMIN fSWMIN VINMAX
For D < 0.5
'ILMAX =
18
(VINMIN - VOUTMAX) VOUTMAX
LMIN fSWMIN VINMIN
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where
•
VINMAX, VINMIN, VOUTMAX, VOUTMIN, LMIN and FSWMIN are the respective maximum and minimum conditions of the
system as defined by the component tolerance and device variation
(9)
From this, the maximum allowable current through the high-side FET (IHSMAX) of device can be described as:
'ILMAX
+ IDCMAX
IHSMAX =
2
where
•
•
IOUTMAX is the maximum defined DC output current, up to 15 A
(10)
Once the IHSMAX value has been determined, a nominal value of the RILIMresistor can be calculated as follows:
582.4
- 14.2
RILIM (k:) =
IHSMAX
where
•
RILIMvalue is the nominal resistance necessary for the given IHSMAX value
(11)
A conservative design should also take into account the device variation over VIN and temperature, as seen in
the Electrical Characteristics table for the ICLR parameter and the typical performance characteristics. These
variations can cause the IHSMAX value to increase, depending on the range of the input voltage and junction
temperature.
CONTROL LOOP COMPENSATION
The LM21215 incorporates a high bandwidth amplifier between the FB and COMP pins to allow the user to
design a compensation network that matches the application. This section will walk through the various steps in
obtaining the open loop transfer function.
There are three main blocks of a voltage mode buck switcher that the power supply designer must consider
when designing the control system; the power train, modulator, and the compensated error amplifier. A closed
loop diagram is shown in Figure 32.
Power Train
PWM Modulator
VIN
RDCR LOUT
DRIVER
VOUT
SW
RESR
RO
COUT
PWM
+
Error Amplifier and Compensation
COMP
+
EA
-
CC1
RC1
0.6V
FB
RFB1
RC2 C
C3
RFB2
CC2
Figure 32. Loop Diagram
The power train consists of the output inductor (L) with DCR (DC resistance RDCR), output capacitor (C0) with
ESR (effective series resistance RESR), and load resistance (Ro). The error amplifier (EA) constantly forces FB to
0.6V. The passive compensation components around the error amplifier help maintain system stability. The
modulator creates the duty cycle by comparing the error amplifier signal with an internally generated ramp set at
the switching frequency.
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There are three transfer functions that must be taken into consideration when obtaining the total open loop
transfer function; COMP to SW (Modulator) , SW to VOUT (Power Train), and VOUT to COMP (Error Amplifier).
The COMP to SW transfer function is simply the gain of the PWM modulator.
V
GPWM = üVinramp
where
•
ΔVRAMP is the oscillator peak-to-peak ramp voltage (nominally 0.8 V)
(12)
The SW to COMP transfer function includes the output inductor, output capacitor, and output load resistance.
The inductor and capacitor create two complex poles at a frequency described by:
fLC =
RO + RDCR
1
2S
LOUTCOUT(RO + RESR)
(13)
In addition to two complex poles, a left half plane zero is created by the output capacitor ESR located at a
frequency described by:
fesr =
1
2SCoResr
(14)
A Bode plot showing the power train response can be seen below.
60
0
-40
40
GAIN (dB)
-120
0
-160
-20
-200
PHASE (°)
-80
20
-240
-40
-280
-60
GAIN
PHASE
-80
100
1k
10k 100k
1M
FREQUENCY (HZ)
-320
-360
10M
Figure 33. Power Train Bode Plot
The complex poles created by the output inductor and capacitor cause a 180° phase shift at the resonant
frequency as seen in Figure 33. The phase is boosted back up to -90° due to the output capacitor ESR zero. The
180° phase shift must be compensated out and phase boosted through the error amplifier to stabilize the closed
loop response. The compensation network shown around the error amplifier in Figure 32 creates two poles, two
zeros and a pole at the origin. Placing these poles and zeros at the correct frequencies will stabilize the closed
loop response. The Compensated Error Amplifier transfer function is:
s
s
+1
+1
2SfZ1
2SfZ2
GEA = Km
s
s
s
+1
+1
2SfP1
2SfP2
(15)
The pole located at the origin gives high open loop gain at DC, translating into improved load regulation
accuracy. This pole occurs at a very low frequency due to the limited gain of the error amplifier, however, it can
be approximated at DC for the purposes of compensation. The other two poles and two zeros can be located
accordingly to stabilize the voltage mode loop depending on the power stage complex poles and Q. Figure 34 is
an illustration of what the Error Amplifier Compensation transfer function will look like.
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GAIN (dB)
100
GAIN
PHASE
90
80
45
60
0
40
-45
20
-90
0
-135
-20
-180
100
1k
10k 100k 1M
FREQUENCY (Hz)
PHASE (°)
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10M
Figure 34. Type 3 Compensation Network Bode Plot
As seen in Figure 34, the two zeros (fLC/2, fLC) in the comensation network give a phase boost. This will cancel
out the effects of the phase loss from the output filter. The compensation network also adds two poles to the
system. One pole should be located at the zero caused by the output capacitor ESR (fESR) and the other pole
should be at half the switching frequency (fSW/2) to roll off the high frequency response. The dependancy of the
pole and zero locations on the compensation components is described below.
fLC
1
fZ1 = 2 = 2SR C
C1 C1
1
fZ2 = fLC = 2S(R + R )C
C1
FB1 C3
fP1 = fESR =
fP2 =
fsw
1
2SRC2CC3
CC1 + CC2
= 2SR C C
2
C1 C1 C2
(16)
An example of the step-by-step procedure to generate comensation component values using the typical
application setup, (see Figure 39), is given. The parameters needed for the compensation values are given in the
table below.
Parameter
Value
VIN
5.0V
VOUT
1.2V
IOUT
15A
fCROSSOVER
100 kHz
L
0.56 µH
RDCR
1.8 mΩ
CO
150 µF
RESR
1.0 mΩ
ΔVRAMP
0.8V
fSW
500 kHz
where ΔVRAMP is the oscillator peak-to-peak ramp voltage (nominally 0.8V), and fCROSSOVER is the frequency at
which the open-loop gain is a magnitude of 1. It is recommended that the fCROSSOVER not exceed one-fifth of the
switching frequency. The output capacitance, CO, depends on capacitor chemistry and bias voltage. For MultiLayer Ceramic Capacitors (MLCC), the total capacitance will degrade as the DC bias voltage is increased.
Measuring the actual capacitance value for the output capacitors at the output voltage is recommended to
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accurately calculate the compensation network. The example given here is the total output capacitance using the
three MLCC output capacitors biased at 1.2V, as seen in the typical application schematic, Figure 39. Note that it
is more conservative, from a stability standpoint, to err on the side of a smaller output capacitance value in the
compensation calculations rather than a larger, as this will result in a lower bandwidth but increased phase
margin.
First, a the value of RFB1 should be chosen. A typical value is 10 kΩ. From this, the value of RC1 can be
calculated to set the mid-band gain so that the desired crossover frequency is achieved:
RC1 =
fcrossover
'VRAMP
fLC
VIN
RFB1
100 kHz 0.8 V
10 k:
17.4 kHz 5.0 V
= 9.2 k:
=
(17)
Next, the value of CC1 can be calculated by placing a zero at half of the LC double pole frequency (fLC):
CC1 =
1
SfLCRC1
= 1.99 nF
(18)
Now the value of CC2 can be calculated to place a pole at half of the switching frequency (fSW):
CC2 =
CC1
SfSWRC1 CC1 -1
= 71 pF
(19)
RC2 can then be calculated to set the second zero at the LC double pole frequency:
RFB1 fLC
RC2 =
fESR - fLC
= 166:
(20)
Last, CC3 can be calculated to place a pole at the same frequency as the zero created by the output capacitor
ESR:
1
CC3 =
2SfESRRC2
= 898 pF
(21)
An illustration of the total loop response can be seen in Figure 35.
200
GAIN
PHASE
150
160
140
GAIN (dB)
100
100
80
60
50
40
20
0
PHASE MARGIN (°)
120
0
-20
-50
-40
10
100
1k
10k 100k
FREQUENCY (Hz)
1M
Figure 35. Loop Response
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It is important to verify the stability by either observing the load transient response or by using a network
analyzer. A phase margin between 45° and 70° is usually desired for voltage mode systems. Excessive phase
margin can cause slow system response to load transients and low phase margin may cause an oscillatory load
transient response. If the load step response peak deviation is larger than desired, increasing fCROSSOVER and
recalculating the compensation components may help but usually at the expense of phase margin.
THERMAL CONSIDERATIONS
The thermal characteristics of the LM21215 are specified using the parameter θJA, which relates the junction
temperature to the ambient temperature. Although the value of θJA is dependant on many variables, it still can be
used to approximate the operating junction temperature of the device.
To obtain an estimate of the device junction temperature, one may use the following relationship:
TJ = PD TJA + TA
(22)
and
PD = PIN (1 - Efficiency) - IOUT2 RDCR
where
•
•
•
•
•
TJ is the junction temperature in °C
PIN is the input power in Watts (PIN = VIN x IIN)
θJA is the junction to ambient thermal resistance for the LM21215
TA is the ambient temperature in °C
IOUT is the output load current in A
(23)
It is important to always keep the operating junction temperature (TJ) below 125°C for reliable operation. If the
junction temperature exceeds 165°C the device will cycle in and out of thermal shutdown. If thermal shutdown
occurs it is a sign of inadequate heatsinking or excessive power dissipation in the device.
Figure 36, shown below, provides a better approximation of the θJA for a given PCB copper area. The PCB used
in this test consisted of 4 layers: 1oz. copper was used for the internal layers while the external layers were
plated to 2oz. copper weight. To provide an optimal thermal connection, a 3 x 5 array of 8 mil. vias under the
thermal pad were used, and an additional twelve 8 mil. vias under the rest of the device were used to connect
the 4 layers.
THERMAL RESISTANCE ( JA)
30
28
26
24
22
20
18
16
14
12
10
2
3
4
5
6
7
8
2
BOARD AREA (in )
9
10
Figure 36. Thermal Resistance vs PCB Area (4 Layer Board)
Figure 37 shows a plot of the maximum ambient temperature vs. output current for the typical application circuit
shown in Figure 39, assuming a θJA value of 24 °C/W.
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MAX. AMBIENT TEMERATURE (°C)
125
120
115
110
105
100
95
90
85
80
0
3
6
9
12
OUTPUT CURRENT (A)
15
Figure 37. Maximum Ambient Temperature vs. Output Current (0 LFM)
PCB LAYOUT CONSIDERATIONS
PC board layout is an important part of DC-DC converter design. Poor board layout can disrupt the performance
of a DC-DC converter and surrounding circuitry by contributing to EMI, ground bounce, and resistive voltage loss
in the traces. These can send erroneous signals to the DC-DC converter resulting in poor regulation or instability.
Good layout can be implemented by following a few simple design rules.
1. Minimize area of switched current loops. In a buck regulator there are two loops where currents are switched
at high slew rates. The first loop starts from the input capacitor, to the regulator PVIN pin, to the regulator SW
pin, to the inductor then out to the output capacitor and load. The second loop starts from the output capacitor
ground, to the regulator GND pins, to the inductor and then out to the load (see Figure 38). To minimize both
loop areas, the input capacitor should be placed as close as possible to the VIN pin. Grounding for both the input
and output capacitor should be close. Ideally, a ground plane should be placed on the top layer that connects the
PGND pins, the exposed pad (EP) of the device, and the ground connections of the input and output capacitors
in a small area near pin 10 and 11 of the device. The inductor should be placed as close as possible to the SW
pin and output capacitor.
2. Minimize the copper area of the switch node. The six SW pins should be routed on a single top plane to the
pad of the inductor. The inductor should be placed as close as possible to the switch pins of the device with a
wide trace to minimize conductive losses. The inductor can be placed on the bottom side of the PCB relative to
the LM21215, but care must be taken to not allow any coupling of the magnetic field of the inductor into the
sensitive feedback or compensation traces.
3. Have a solid ground plane between PGND, the EP and the input and output cap. ground connections. The
ground connections for the AGND, compensation, feedback, and soft-start components should be physically
isolated (located near pin 1 and 20) from the power ground plane but a separate ground connection is not
necessary. If not properly handled, poor grounding can result in degraded load regulation or erratic switching
behavior.
4. Carefully route the connection from the VOUT signal to the compensation network. This node is high
impedance and can be susceptible to noise coupling. The trace should be routed away from the SW pin and
inductor to avoid contaminating the feedback signal with switch noise.
5. Make input and output bus connections as wide as possible. This reduces any voltage drops on the input or
output of the converter and can improve efficiency. Voltage accuracy at the load is important so make sure
feedback voltage sense is made at the load. Doing so will correct for voltage drops at the load and provide the
best output accuracy.
24
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LM21215
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SNVS625E – FEBRUARY 2011 – REVISED MARCH 2013
6. Provide adequate device heatsinking. For most 15A designs a four layer board is recommended. Use as many
vias as is possible to connect the EP to the power plane heatsink. The vias located undernieth the EP will wick
solder into them if they are not filled. Complete solder coverage of the EP to the board is required to achieve the
θJA values described in the previous section. Either an adequate amount of solder must be applied to the EP pad
to fill the vias, or the vias must be filled during manufacturing. See the THERMAL CONSIDERATIONS section to
ensure enough copper heatsinking area is used to keep the junction temperature below 125°C.
LM21215
L
VOUT
SW
PVIN
VIN
CIN
COUT
PGND
LOOP1
LOOP2
Figure 38. Schematic of LM21215 Highlighting Layout Sensitive Nodes
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LM21215
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HTSSOP-20
5,6,7
VIN
3
RF
4
CIN1 CIN2 CIN3
PVIN
LO
SW
VOUT
CC3
EN
RFB1
RC2
AVIN
CF
LM21215
FB
CSS
11-16
2 SS /
TRK
COMP
CO1 CO2 CO3
19
18
CC1 RC1
RFB2
CC2
VIN
1
ILIM
RILIM
17
PGOOD
PGND AGND
8,9,10
RPGOOD
20
Figure 39. Typical Application Schematic 1
Table 1. Bill of Materials (VIN = 3.3 - 5.5V, VOUT = 1.2V, IOUT = 15A)
ID
DESCRIPTION
VENDOR
PART NUMBER
QUANTITY
CF
CAP, CERM, 1uF, 10V, +/-10%, X7R, 0603
MuRata
GRM188R71A105KA61D
1
CIN1, CIN2,
CIN3, CO1, CO2,
CO3
CAP, CERM, 100uF, 6.3V, +/-20%, X5R, 1206
MuRata
GRM31CR60J107ME39L
6
CC1
CAP, CERM, 1800pF, 50V, +/-5%, C0G/NP0, 0603
TDK
C1608C0G1H182J
1
CC2
CAP, CERM, 68pF, 50V, +/-5%, C0G/NP0, 0603
TDK
C1608C0G1H680J
1
CC3
CAP, CERM, 820pF, 50V, +/-5%, C0G/NP0, 0603
TDK
C1608C0G1H821J
1
26
CSS
CAP, CERM, 0.033uF, 16V, +/-10%, X7R, 0603
MuRata
GRM188R71C333KA01D
1
LO
Inductor, Shielded Drum Core, Powdered Iron, 560nH,
27.5A, 0.0018 ohm, SMD
Vishay-Dale
IHLP4040DZERR56M01
1
RF
RES, 1.0 ohm, 5%, 0.1W, 0603
Vishay-Dale
CRCW06031R00JNEA
1
RC1
RES, 9.31k ohm, 1%, 0.1W, 0603
Vishay-Dale
CRCW06039K31FKEA
1
RC2
RES, 165 ohm, 1%, 0.1W, 0603
Vishay-Dale
CRCW0603165RFKEA
1
RFB1, RFB2,
RPGOOD
RES, 10k ohm, 1%, 0.1W, 0603
Vishay-Dale
CRCW060310K0FKEA
3
RILIM
RES, 7.15k ohm, 1%, 0.1W, 0603
Vishay-Dale
CRCW06037K15FKEA
1
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HTSSOP-20
LO
5,6,7
VIN
PVIN
CIN1
RF
REN1
3
4
CF
SW
VOUT
CC3
EN
RFB1
RC2
AVIN
REN2
LM21215
FB
CSS
11-16
2 SS/
TRK
COMP
CO1 CO2
19
18
CC1 RC1
RFB2
CC2
VIN
1
ILIM
PGOOD
17
RPGOOD
PGND AGND
RILIM
8,9,10
20
Figure 40. Typical Application Schematic 2
Table 2. Bill of Materials (VIN = 4.0 - 5.5V, VOUT = 0.9V, IOUT = 8A)
ID
DESCRIPTION
VENDOR
PART NUMBER
QUANTITY
CF
CAP, CERM, 1uF, 10V, +/-10%, X7R, 0603
MuRata
GRM188R71A105KA61D
1
CIN1, CO1, CO2
CAP, CERM, 100uF, 6.3V, +/-20%, X5R, 1206
MuRata
GRM31CR60J107ME39L
3
CC1
CAP, CERM, 1800pF, 50V, +/-5%, C0G/NP0, 0603
MuRata
GRM1885C1H182JA01D
1
CC2
CAP, CERM, 82pF, 50V, +/-5%, C0G/NP0, 0603
TDK
C1608C0G1H820J
1
CC3
CAP, CERM, 820pF, 50V, +/-5%, C0G/NP0, 0603
TDK
C1608C0G1H821J
1
CSS
CAP, CERM, 0.033uF, 16V, +/-10%, X7R, 0603
MuRata
GRM188R71C333KA01D
1
LO
Inductor, Shielded Drum Core, 680nH, 22A,
0.0014 ohm, SMD
Coilcraft
XAL1060-681ME
1
RF
RES, 1.0 ohm, 5%, 0.1W, 0603
Vishay-Dale
CRCW06031R00JNEA
1
RC1
RES, 8.25k ohm, 1%, 0.1W, 0603
Vishay-Dale
CRCW06038K25FKEA
1
RC2
RES, 124 ohm, 1%, 0.1W, 0603
Vishay-Dale
CRCW0603124RFKEA
1
REN1, RFB1,
RPGOOD
RES, 10k ohm, 1%, 0.1W, 0603
Vishay-Dale
CRCW060310K0FKEA
3
REN2
RES, 19.6k ohm, 1%, 0.1W, 0603
Vishay-Dale
CRCW060319K6FKEA
1
RFB2
RES, 20.0k ohm, 1%, 0.1W, 0603
Vishay-Dale
CRCW060320K0FKEA
1
RILIM
RES, 39.2k ohm, 1%, 0.1W, 0603
Vishay-Dale
CRCW060339K2FKEA
1
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27
LM21215
SNVS625E – FEBRUARY 2011 – REVISED MARCH 2013
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REVISION HISTORY
Changes from Revision D (March 2013) to Revision E
•
28
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 27
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LM21215MH/NOPB
ACTIVE
HTSSOP
PWP
20
73
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM21215
MH
LM21215MHE/NOPB
ACTIVE
HTSSOP
PWP
20
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM21215
MH
LM21215MHX/NOPB
ACTIVE
HTSSOP
PWP
20
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM21215
MH
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
LM21215MHE/NOPB
HTSSOP
PWP
20
250
178.0
16.4
LM21215MHX/NOPB
HTSSOP
PWP
20
2500
330.0
16.4
Pack Materials-Page 1
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
6.95
7.1
1.6
8.0
16.0
Q1
6.95
7.1
1.6
8.0
16.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM21215MHE/NOPB
HTSSOP
PWP
LM21215MHX/NOPB
HTSSOP
PWP
20
250
203.0
190.0
41.0
20
2500
367.0
367.0
35.0
Pack Materials-Page 2
MECHANICAL DATA
PWP0020AA
MYB20XX (REV E)
4214875/A
NOTES:
A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
B. This drawing is subject to change without notice.
C. Reference JEDEC Registration MO-153, Variation ACT.
www.ti.com
02/2013
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