LM4050QML Precision Micropower Shunt Voltage Reference General Description Key Specifications The LM4050QML precision voltage reference is available in a 10 Lead Ceramic SOIC package. The LM4050QML's design eliminates the need for an external stabilizing capacitor while ensuring stability with a capacitive load, thus making the LM4050QML easy to use. The LM4050-2.5QML has a 60 μA minimum and 15 mA maximum operating current. The LM4050-5.0QML has a 74 μA minimum and 15 mA maximum operating current. The LM4050QML utilizes fuse and zener-zap reverse breakdown voltage trim during wafer sort to ensure that the prime parts have an accuracy of better than ±0.1% at 25°C. Bandgap reference temperature drift curvature correction and low dynamic impedance ensure stable reverse breakdown voltage accuracy over a wide range of operating temperatures and currents. The LM4050QML operates over the temperature range of -55°C to +125°C. Features ■ ■ ■ ■ ■ Low Dose Rate Qualified 100 krad(Si) SEFI Immune SET Immune with 60μF CLOAD CLOAD 0μF to 100μF Fixed reverse breakdown voltage of 2.500V, 5.000V LM4050-2.5QML ■ Output voltage tolerance IR = 100μA ■ Low temperature coefficient ■ Low output noise ■ Wide operating current range ±0.1% @ 25°C 15 ppm/°C 50 μVrms(typ) 60 μA to 15 mA LM4050-5.0QML ■ Output voltage tolerance IR = 100μA ■ Low temperature coefficient ■ Low output noise ■ Wide operating current range ±0.1% @ 25°C 23 ppm/°C 100 μVrms(typ) 74 μA to 15 mA Applications ■ ■ ■ ■ ■ Control Systems Data Acquisition Systems Instrumentation Process Control Energy Management Ordering Information NS Part Number SMD Part Number NS Package Number Package Description LM4050WG2.5RLQV Low Dose Rate Qualified 5962R0923561VZA 100 krad(Si) WG10A 10LD Ceramic SOIC WG10A 10LD Ceramic SOIC WG10A 10LD Ceramic SOIC WG10A 10LD Ceramic SOIC LM4050WG2.5-MPR Pre-Flight Prototype LM4050WG5.0RLQV Low Dose Rate Qualified 5962R0923562VZA 100 krad(Si) LM4050WG5.0-MPR Pre-Flight Prototype © 2012 Texas Instruments Incorporated 301041 SNVS627E www.ti.com LM4050QML Precision Micropower Shunt Voltage Reference May 23, 2012 LM4050QML Connection Diagram 10L Ceramic SOIC 30104101 Top View See NS Package Number WG10A Pin Descriptions www.ti.com Pin Number Pin Name Function 1 GND/NC Ground or No Connect 2 GND/NC Ground or No Connect 3 GND/NC Ground or No Connect 4 GND/NC Ground or No Connect 5 GND Ground 6 GND/NC Ground or No Connect 7 GND/NC Ground or No Connect 8 GND/NC Ground or No Connect 9 GND/NC Ground or No Connect 10 VREF Reference Voltage 2 Reverse Current Forward Current Power Dissipation (TA = 25°C) (Note 2) 10LD Ceramic SOIC Package Lead Temperature (Soldering, 10 seconds) Ceramic SOIC Storage Temperature Package Weight (typical) Ceramic SOIC ESD Tolerance (Note 3) Operating Ratings -55°C ≤ TA ≤ +125°C Temperature Range 20 mA 10 mA 467 mW (Note 2) Reverse Current LM4050-2.5QML 60 μA to 15 mA LM4050-5.0QML 74 μA to 15 mA Package Thermal Resistance 260°C -65°C to +150°C Package 241mg Class 2 (2000V) θJA θJA (500LF/Min (Still Air) Air flow) 10L Ceramic SOIC Package on 2 layer, 214°C/ W 1oz PCB 147°C/ W θJC 20.87°C/ W Quality Conformance Inspection MIL-STD-883, Method 5005 - Group A Subgroup Description Temp ( C) 1 Static tests at +25 2 Static tests at +125 3 Static tests at -55 4 Dynamic tests at +25 5 Dynamic tests at +125 6 Dynamic tests at -55 7 Functional tests at +25 8A Functional tests at +125 8B Functional tests at -55 9 Switching tests at +25 10 Switching tests at +125 11 Switching tests at -55 12 Setting time at +25 13 Setting time at +125 14 Setting time at -55 3 www.ti.com LM4050QML Absolute Maximum Ratings (Note 1) LM4050QML LM4050-2.5QML Electrical Characteristics SMD: 5962R0923561 The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Symbol Parameter Conditions Reverse Breakdown Voltage IR = 100 μA Notes Typical (Note 4) Min 2.500 Reverse Breakdown Voltage Tolerance IR = 100μA ±2.5 IR = 1mA ±3.75 IR = 10mA ±10 IR = 15mA ±13 IR = 60µA ±5 IR = 100μA ±5 IR = 1mA ±6.25 IR = 10mA ±12.5 IR = 15mA ±14 IR = 60µA ±4.5 IR = 100μA ±4.5 IR = 1mA ±5.75 IR = 10mA ±13 IR = 60µA 1 mV 2 mV 3 40.5 60 μA 1 65 μA 2, 3 ±3 ±15 ±3 ±16 ±3 ±18 Average Reverse Breakdown Voltage Temperature Coefficient IR = 100μA @ 25°C ≤ TA ≤ 125°C IR = 10mA ±4 ±20 IR = 15mA ±6 ±22 IR = 60µA ±3 ±18 ±3 ±19 ±3.5 ±22 (Note 8) IR = 1mA Average Reverse Breakdown Voltage Temperature Coefficient IR = 100μA @ −55°C ≤ TA ≤ 25°C IR = 10mA ±10 ±32 IR = 15mA ±15 ±45 (Note 8) IR = 1mA IR = 1 mA, f = 120 Hz, IAC = 0.1 IR ZR Reverse Dynamic Impedance VN Output Noise Voltage CLOAD Load Capacitor Stable Over Temperature (Note 6) 60 VHYST Thermal Hysteresis ΔT = −55°C to 125°C (Note 5) 1 www.ti.com mV ±17.5 Minimum Operating Current ΔVR/ΔT Subgroups ±2.5 IR = 15mA IRMIN Units V IR = 60µA VR Max 2 ppm/°C 3 Ω 0.3 0.1 Hz ≤ f ≤ 10 Hz 9 μVpp 10 Hz ≤ f ≤ 10KHz 50 μVrms 4 0 100 µF ppm (Note 7) Symbol Parameter Conditions 30 krad 50 krad 100 krad Subgroups +0.42% +0.67% +1.5% 1 IR = 60μA VR IR= 100μA Reverse Breakdown Voltage Tolerance Max IR = 1mA IR = 10mA IR = 15mA Post Radiation Tempco Symbol (Note 8) Parameter Conditions Average Reverse Breakdown Voltage Temperature Coefficient ΔVR/ΔT Drift @ 25°C ≤ TA ≤ 125°C Average Reverse Breakdown Voltage Temperature Coefficient Drift @ −55°C ≤ TA ≤ 25°C TYPICALS 30 krad 50 krad 100 krad Units 60μA ≤ IR ≤ 15mA +41 +83 +144 ppm/°C 60μA ≤ IR ≤ 15mA +46 +87 +166 ppm/°C Operational Life Test Delta Parameters This table represents the drift seen from initial measurements post 1000hr Operational Life Burn-In. All units will remain within the electrical characteristics limits post 1000hr Operational Life Burn-In. Deltas required for QMLV product at Group B, Sub-Group 5. Symbol VR IRMIN Parameter Reverse Breakdonwn Voltage Tolerance Conditions Min Max IR = 60µA Note -0.873 0.873 IR = 100µA -0.873 0.873 IR = 1mA -0.998 0.998 IR = 10mA -3.93 3.93 IR = 15mA -5 5 -0.623 0.623 Minimum Operating Current 5 Units Temp mV 1 µA 1 www.ti.com LM4050QML Post Radiation @ 25°C The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. LM4050QML LM4050-5.0QML Electrical Characteristics SMD: 5962R0923562 The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Symbol VR Parameter Conditions Reverse Breakdown Voltage IR = 100 μA Reverse Breakdown Voltage Tolerance Notes Typical (Note 4) Min 5.000 ±5.0 IR = 100μA ±5.0 IR = 1mA ±8 IR = 10mA ±18 IR = 15mA ±20 IR = 74µA ±10 IR = 100μA ±10 IR = 1mA ±12 IR = 10mA ±22.5 IR = 15mA ±28 IR = 74µA ±9 IR = 100μA ±9 IR = 1mA ±11.5 IR = 10mA ±29 IR = 74µA mV 3 74 μA 2, 3 ±9 ±23 ±9 ±25 ±10 ±28 ±11 ±35 IR = 15mA ±11 ±40 IR = 74µA ±10 ±25 ±10 ±29 ±10 ±34 (Note 8) IR = 1mA Average Reverse Breakdown Voltage Temperature Coefficient IR = 100μA @ −55°C ≤ TA ≤ 25°C IR = 10mA ±15 ±45 IR = 15mA ±20 ±60 (Note 8) IR = 1mA 2 ppm/°C 3 IR = 1 mA, f = 120 Hz, IAC = 0.1 IR 0.5 Ω 10 Hz ≤ f ≤ 10KHz 100 μVrms CLOAD Load Capacitor Stable Over Temperature (Note 6) VHYST Thermal Hysteresis ΔT = -55°C to 125°C (Note 5) www.ti.com 2 1 IR = 10mA Output Noise Voltage mV μA @ 25°C ≤ TA ≤ 125°C VN 1 70 IR = 100μA Reverse Dynamic Impedance mV 53 Average Reverse Breakdown Voltage Temperature Coefficient ZR Subgroups ±37 Minimum Operating Current ΔVR/ΔT Units V IR = 74µA IR = 15mA IRMIN Max 6 60 20 0 100 µF ppm (Note 7) Symbol Parameter Conditions 30 krad 50 krad 100 krad Subgroups +0.37% +0.61% +1.75% 1 IR = 74μA VR IR= 100μA Reverse Breakdown Voltage Tolerance Max IR = 1mA IR = 10mA IR = 15mA Post Radiation Tempco Symbol (Note 8) Parameter Conditions Average Reverse Breakdown Voltage Temperature Coefficient ΔVR/ΔT Drift @ 25°C ≤ TA ≤ 125°C Average Reverse Breakdown Voltage Temperature Coefficient Drift @ −55°C ≤ TA ≤ 25°C TYPICALS 30 krad 50 krad 100 krad Units 74μA ≤ IR ≤ 15mA +87 +166 +387 ppm/°C 74μA ≤ IR ≤ 15mA +96 +162 +343 ppm/°C Operational Life Test Delta Parameters This table represents the drift seen from initial measurements post 1000hr Operational Life Burn-In. All units will remain within the electrical characteristics limits post 1000hr Operational Life Burn-In. Deltas required for QMLV product at Group B, Sub-Group 5. Symbol Parameter Conditions Note IR = 74µA VR IRMIN Reverse Breakdonwn Voltage Tolerance Min Max −0.8 0.8 IR = 100µA −0.8 0.8 IR = 1mA −0.84 0.84 IR = 10mA −1.6 1.6 IR = 15mA −2.6 2.6 −0.623 0.623 Minimum Operating Current Units Temp mV 1 µA 1 Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax − TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050QML, TJmax = 125°C, and the typical thermal resistance (θJA), when board mounted, is 214°C/W for the 10 Lead Ceramic SOIC package. Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. Note 4: Typicals are at TA = 25°C and represent most likely parametric norm. Note 5: Thermal hysteresis is defined as the change in voltage measured at +25°C after cycling to temperature -55°C and the 25°C measurement after cycling to temperature +125°C. Where: VHYST = Thermal hysteresis expressed in ppm VR = Nominal preset output voltage VR1 = VR before temperature fluctuation VR2 = VR after temperature fluctuation. Note 6: Capacitive load not required but improves SET stability. This parameter is guaranteed by design and/or characterization and is not tested in production. Note 7: Pre and post irradiation limits are identical to those listed under electrical characteristics except as listed in the post radiation table. Note 8: Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table. 7 www.ti.com LM4050QML Post Radiation @ 25°C The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. LM4050QML Typical Performance Characteristics Output Impedance vs Frequency Output Impedance vs Frequency 30104110 30104111 Reverse Characteristics and Minimum Operating Current 2.5V Thermal Hysteresis 30104129 30104112 5.0V Thermal Hysteresis 30104130 www.ti.com 8 LM4050QML Typical Radiation Characteristics 2.5V Low Dose Rate Drift at 10 mrad(Si)/s 30104123 5V Low Dose Rate Drift at 10 mrad(Si)/s 30104124 9 www.ti.com LM4050QML Start-Up Characteristics 30104105 LM4050-2.5QML RS = 30k LM4050-5.0QML RS = 30k 30104107 30104108 www.ti.com 10 LM4050QML Functional Block Diagram 30104114 Applications Information Radiation Environments The LM4050QML is a precision micro-power curvature-corrected bandgap shunt voltage reference. The LM4050QML is available in the 10 Lead Ceramic SOIC package. The LM4050QML has been designed for stable operation without the need of an external capacitor connected between the “+” pin and the “−” pin. If, however, a bypass capacitor is used, the LM4050QML remains stable. The LM4050-2.5QML has a 60 μA minimum and 15 mA maximum operating current. The LM4050-5.0QML has a 74 μA minimum and 15 mA maximum operating current. The typical thermal hysteresis specification is defined as the change in +25°C voltage measured after thermal cycling. The device is thermal cycled to temperature -55°C and then measured at 25°C. Next the device is thermal cycled to temperature +125°C and again measured at 25°C. The resulting VOUT delta shift between the 25°C measurements is thermal hysteresis. Thermal hysteresis is common in precision references and is induced by thermal-mechanical package stress. Changes in environmental storage temperature, operating temperature and board mounting temperature are all factors that can contribute to thermal hysteresis. In a conventional shunt regulator application (Figure 1) , an external series resistor (RS) is connected between the supply voltage and the LM4050QML. RS determines the current that flows through the load (IL) and the LM4050QML (IQ). Since load current and supply voltage may vary, RS should be small enough to supply at least the maximum guaranteed IRMIN (spec. table) to the LM4050QML even when the supply voltage is at its minimum and the load current is at its maximum value. When the supply voltage is at its maximum and IL is at its minimum, RS should be large enough so that the current flowing through the LM4050QML is less than 15 mA. RS is determined by the supply voltage, (VS), the load and operating current, (IL and IQ), and the LM4050QML's reverse breakdown voltage, VR. Careful consideration should be given to environmental conditions when using a product in a radiation environment. TOTAL IONIZING DOSE Radiation hardness assured (RHA) products are those part numbers with a total ionizing dose (TID) level specified in the Ordering Information table on the front page. Testing and qualification of these products is done on a wafer level according to MIL-STD-883, Test Method 1019. Wafer level TID data is available with lot shipments. Testing and qualification is performed at the 30, 50 and 100 krad TID levels at a dose rate of 10 mrad/s, using a 1.5X overtest at each TID level. For the 30 krad level units are tested to 50 krad, for 50 krad units are tested to 80 krad and for 100 krad units are tested to 150 krad, with all parameters remaining inside the post irradiation test limits. SINGLE EVENT EFFECTS (SEE) One time single event effects characterization was performed according to EIA/JEDEC Standard, EIA/JEDEC57. A test report is available upon request. SINGLE EVENT TRANSIENTS (SET) With a 60 µF capacitor on the output, no single event transients were seen at the highest linear energy transfer (LET) tested: 59 MeV-cm2/mg. SET characterization with other capacitor values is in the SEE report, available upon request. SINGLE EVENT FUNCTIONAL INTERRUPT (SEFI) No single event functional interrupts were detected to the highest linear energy transfer (LET) tested: 100 MeV-cm2/mg. 11 www.ti.com LM4050QML Typical Applications 30104115 FIGURE 1. Shunt Regulator 30104120 FIGURE 2. The LM4050QML as a power supply and reference www.ti.com 12 LM4050QML 30104119 FIGURE 3. The LM4050QML as a power supply and reference The LM4050QML is a good choice as a power regulator for the DAC121S101QML or ADC128S102QML. The minimum resistor value in the circuit of Figure 2 or Figure 3 should be chosen such that the maximum current through the LM4050QML does not exceed its 15 mA rating. The conditions for maximum current include the input voltage at its maximum, the LM4050QML voltage at its minimum, the resistor value at its minimum due to tolerance, and the DAC121S101QML or ADC128S102QML draws zero current. The maximum resistor value must allow the LM4050QML to draw more than its minimum current for regulation plus the maximum DAC121S101QML or ADC128S102QML current in full operation. The conditions for minimum current include the input voltage at its minimum, the LM4050QML voltage at its maximum, the resistor value at its maximum due to tolerance, and the DAC121S101QML or ADC128S102QML draws its maximum current. These conditions can be summarized as R(min) = ( VIN(max) − VZ(min) / (IA(min) + IZ(max) and R(max) = ( VIN(min) − VZ(max) / (IA(max) + IZ(min) where VZ(min) and VZ(max) are the nominal LM4050QML output voltages ± the LM4050QML output tolerance over temperature, IZ(max) is the maximum allowable current through the LM4050QML, IZ(min) is the minimum current required by the LM4050QML for proper regulation, IA(max) is the maximum DAC121S101QML or ADC128S102QML supply current, and IA(min) is the minimum DAC121S101QML or ADC128S102QML supply current. 13 www.ti.com LM4050QML 30104117 FIGURE 4. Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage. Nominal clamping voltage is ±11.5V (LM4050QML's reverse breakdown voltage +2 diode VF). 30104118 FIGURE 5. Protecting Op Amp input. The bounding voltage is ±4V with the LM4050-2.5QML (LM4050QML's reverse breakdown voltage + 3 diode VF). www.ti.com 14 LM4050QML 30104121 30104122 FIGURE 6. Precision 1 μA to 1 mA Current Sources 15 www.ti.com LM4050QML Revision History Date Released Revision Section Changes A Initial Release New Product Low Dose Qualified LM4050WG2.5RLQV Initial Release 01/20/2012 B General Description, Features, Key Specifications, Ordering Table, Operating Ratings, Package Thermal Table, Electrical Section General Description, Features, Key Specifications, Ordering Table, Operating Ratings, Package Thermal Table, Electrical Section — Added the 5.0 V option information for all sections. Added new NSIDS LM4050WG5.0RLQV and LM4050WG5.0–MPR Voltage option to data sheet. Revision A will be Archived. 05/23/2012 C Electrical Section Electrical Section — Updated Delta Vr/Delta T for typical limits for both the 2.5 and 5.0 versions. Revision B will be Archived. 08/20/2010 www.ti.com 16 LM4050QML Physical Dimensions inches (millimeters) unless otherwise noted 10 Lead Ceramic SOIC NS Package Number WG10A 17 www.ti.com LM4050QML Precision Micropower Shunt Voltage Reference Notes www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. 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