5962R092356xV

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
Add conditions of IR = 15 mA for subgroups 2, 3 and make limit changes to the
A
∆VR / ∆T test as specified under Table I. - ro
11-03-24
C. SAFFLE
B
Add device type 62. Make change to title block on first sheet.
Make change to Table IB title description and footnote 1/. - ro
12-05-10
C. SAFFLE
C
Make limit changes to Reverse breakdown voltage tolerance test as specified
under Table IB. Delete device class M references. - ro
13-10-02
C. SAFFLE
REV
SHEET
REV
C
SHEET
15
REV STATUS
REV
C
C
C
C
C
C
C
C
C
C
C
C
C
C
OF SHEETS
SHEET
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PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
CHARLES F. SAFFLE
DRAWING APPROVAL DATE
10-08-18
REVISION LEVEL
C
MICROCIRCUIT, LINEAR, 2.5 V AND 5.0 V
PRECISION MICROPOWER SHUNT VOLTAGE
REFERENCE, MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-09235
1 OF 15
5962-E494-13
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
09235
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
61
V
Z
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
61
LM4050
62
LM4050
Circuit function
Radiation hardened, 2.5 V precision micropower
shunt voltage reference
Radiation hardened, 5.0 V precision micropower
shunt voltage reference
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Z
Descriptive designator
Terminals
Package style
GDFP1-G10
10
Flat pack with gullwing leads
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
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REVISION LEVEL
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SHEET
2
1.3 Absolute maximum ratings. 1/
Reverse current .................................................................................................. 20 mA
Forward current ................................................................................................... 10 mA
Power dissipation (PD) (TA = +25°C) .................................................................. 467 mW 2/
Junction temperature (TJ) ................................................................................... +150°C
Lead temperature (soldering, 10 seconds) .......................................................... +260°C
Storage temperature ........................................................................................... -65°C to +150°C
Electrostatic discharge (ESD) tolerance ............................................................. 2, 000 V 3/
Thermal resistance, junction-to-case (θJC) ......................................................... 20.87°C/W
Thermal resistance, junction-to-ambient (θJA) .................................................... 214°C/W (still air)
147°C/W (500 linear feet /minute air flow)
1.4 Recommended operating conditions.
Reverse current :
Device type 61 ................................................................................................. 60 µA to 15 mA
Device type 62 ................................................................................................. 74 µA to 15 mA
Ambient operating temperature range (TA) ......................................................... -55°C to +125°C
1.5 Radiation features.
Maximum total dose available (dose rate = .010 rads(Si)/s) ............................... 100 krads(Si) 4/
The manufacturer supplying RHA parts on this drawing has performed a characterization test to demonstrate if the
parts exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 method 1019 paragraph 3.13.11.
These parts have been characterized and observed to be enhanced low dose rate sensitive. However, the characterization
test demonstrated the parts did pass the radiation end point parameter limits under low dose rate conditions according to
MIL-STD-883 method 1019 paragraph 3.13.3.b. The manufacturer will continue to perform low dose rate lot acceptance
testing on each wafer lot or wafer according to method 1019 of MIL-STD-883.
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/
Maximum power dissipation must be de-rated at elevated temperatures and is dictated by TJ (maximum junction
temperature), θJA (junction to ambient thermal resistance), and TA (ambient temperature). The maximum
allowable power dissipation at any temperature is PDmax = (TJ(max) – TA) / θJA or the number given in absolute maximum
ratings paragraph 1.3 herein, which ever is lower.
3/
The human body model is 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.
4/
For device types 61 and 62, these part have been tested and do demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883,
method 1019, condition D and paragraph 3.13.3.b.
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DSCC FORM 2234
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A
REVISION LEVEL
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SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the
full ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
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TABLE IA. Electrical performance characteristics. 1/ 2/
Test
Reverse breakdown voltage
tolerance
Symbol
VR
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
IR = 60 µA
Group A
subgroups
Device
type
Min
1
61
Unit
Max
±2.5
IR = 100 µA
±2.5
IR = 1 mA
±3.75
IR = 10 mA
±10
IR = 15 mA
±13
IR = 60 µA
mV
±5
2
±5
IR = 100 µA
IR = 1 mA
±6.25
IR = 10 mA
±12.5
IR = 15 mA
±14
IR = 60 µA
Minimum operating current
Limits
±4.5
3
IR = 100 µA
±4.5
IR = 1 mA
±5.75
IR = 10 mA
±13
IR = 15 mA
±17.5
1
IRMIN
61
2,3
60
µA
65
See footnotes at end of table.
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TABLE IA. Electrical performance characteristics - continued. 1/ 2/
Test
Average reverse breakdown 3/
voltage temperature coefficient
Symbol
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
∆VR /
IR = 60 µA,
∆T
25°C ≤ TA ≤ 125°C
Group A
subgroups
Device
type
Limits
Min
2
61
IR = 100 µA,
Unit
Max
±15
ppm/°C
±16
25°C ≤ TA ≤ 125°C
±18
IR = 1 mA,
25°C ≤ TA ≤ 125°C
±20
IR = 10 mA,
25°C ≤ TA ≤ 125°C
±22
IR = 15 mA,
25°C ≤ TA ≤ 125°C
±18
3
IR = 60 µA,
-55°C ≤ TA ≤ 25°C
IR = 100 µA,
±19
-55°C ≤ TA ≤ 25°C
±22
IR = 1 mA,
-55°C ≤ TA ≤ 25°C
±32
IR = 10 mA,
-55°C ≤ TA ≤ 25°C
±45
IR = 15 mA,
-55°C ≤ TA ≤ 25°C
See footnotes at end of table.
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TABLE IA. Electrical performance characteristics - continued. 1/ 2/
Test
Reverse breakdown voltage
tolerance
Symbol
VR
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
IR = 74 µA
Group A
subgroups
Device
type
Min
1
62
Unit
Max
±5.0
mV
±5.0
IR = 100 µA
IR = 1 mA
±8
IR = 10 mA
±18
IR = 15 mA
±20
IR = 74 µA
±10
2
IR = 100 µA
±10
IR = 1 mA
±12
IR = 10 mA
±22.5
IR = 15 mA
±28
IR = 74 µA
±9
3
±9
IR = 100 µA
Minimum operating current
Limits
IR = 1 mA
±11.5
IR = 10 mA
±29
IR = 15 mA
±37
1
IRMIN
62
2,3
70
µA
74
See footnotes at end of table.
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TABLE IA. Electrical performance characteristics - continued. 1/ 2/
Test
Average reverse breakdown 3/
voltage temperature coefficient
Symbol
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
∆VR /
IR = 74 µA,
∆T
25°C ≤ TA ≤ 125°C
Group A
subgroups
Device
type
Limits
Min
2
62
IR = 100 µA,
Unit
Max
±23
ppm/°C
±25
25°C ≤ TA ≤ 125°C
±28
IR = 1 mA,
25°C ≤ TA ≤ 125°C
±35
IR = 10 mA,
25°C ≤ TA ≤ 125°C
±40
IR = 15 mA,
25°C ≤ TA ≤ 125°C
±25
3
IR = 74 µA,
-55°C ≤ TA ≤ 25°C
IR = 100 µA,
±29
-55°C ≤ TA ≤ 25°C
±34
IR = 1 mA,
-55°C ≤ TA ≤ 25°C
±45
IR = 10 mA,
-55°C ≤ TA ≤ 25°C
±60
IR = 15 mA,
-55°C ≤ TA ≤ 25°C
1/
RHA devices supplied to this drawing are characterized and tested through all levels M, D, P, L, and R of irradiation.
Pre and Post irradiation values are identical unless otherwise specified in Table IB. When performing post irradiation
electrical measurements for any RHA level, TA = +25°C.
2/
These parts have been tested and do demonstrate enhanced low dose rate effects. Radiation end point limits for the noted
parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D and paragraph 3.13.3.b
with an overtest factor of 1.5X. For 100 krad, units are tested to 150 krad and still meet the radiation end point limits.
3/
This parameter not tested post irradiation.
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TABLE IB. Post irradiation (low dose rate) reference voltage drift limits.
Test
Symbol
Conditions
Device type 61
Reverse breakdown 1/
voltage tolerance
VR
RHA level
designators
Group A
subgroups
P
1
IR = 60 µA
IR = 100 µA
IR = 1 mA
IR = 10 mA
IR = 15 mA
Limits
Min
Max
+0.42%
L
+0.67%
R
+1.75%
P
+0.42%
L
+0.67%
R
+1.75%
P
+0.42%
L
+0.67%
R
+1.75%
P
+0.42%
L
+0.67%
R
+1.75%
P
+0.42%
L
+0.67%
R
+1.75%
See footnote at end of table.
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TABLE IB. Post irradiation (low dose rate) reference voltage drift limits – continued.
Test
Symbol
Conditions
Device type 62
Reverse breakdown 1/
voltage tolerance
VR
RHA level
designators
Group A
subgroups
P
1
IR = 74 µA
IR = 100 µA
IR = 1 mA
IR = 10 mA
IR = 15 mA
1/
Limits
Min
Max
+0.42%
L
+0.67%
R
+1.75%
P
+0.42%
L
+0.67%
R
+1.75%
P
+0.42%
L
+0.67%
R
+1.75%
P
+0.42%
L
+0.67%
R
+1.75%
P
+0.42%
L
+0.67%
R
+1.75%
Post irradiation reference voltage tolerance limit is the maximum allowable change from the pre irradiation
measured value.
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Device types
61 and 62
Case outline
Z
Terminal
number
Terminal
symbol
Description
1
GND / NC
Ground or no connect
2
GND / NC
Ground or no connect
3
GND / NC
Ground or no connect
4
GND / NC
Ground or no connect
5
GND
Ground
6
GND / NC
Ground or no connect
7
GND / NC
Ground or no connect
8
GND / NC
Ground or no connect
9
GND / NC
Ground or no connect
10
VREF
Reference voltage
FIGURE 1. Terminal connections.
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3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
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TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1/
2/
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
1
Subgroups
(in accordance with
MIL-PRF-38535, table III)
1
1
1,2,3 1/
1,2,3 1/
1,2,3 1/
1,2,3
1,2,3
1,2,3
1,2,3
1,2,3
1,2,3 2/
1,2,3
1,2,3
1,2,3
1
1
1
Device
class Q
Device
class V
PDA applies to subgroup 1.
Delta limits as specified in table IIB shall be required where specified, and the delta limits
shall be computed with reference to the zero hour electrical parameters (see table IA).
TABLE IIB. Operating life test delta parameters. TA = +25°C.
Parameters
Symbol
Condition
Delta limits
Device type 61
Reverse breakdown
voltage tolerance
Minimum operating
current
VR
1/
Units
Min
Max
IR = 60 µA
-0.873
0.873
IR = 100 µA
-0.873
0.873
IR = 1 mA
-0.998
0.998
IR = 10 mA
-3.93
3.93
IR = 15 mA
-5
5
-0.623
0.623
IRMIN
mV
µA
See footnote at end of table.
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TABLE IIB. Operating life test delta parameters – continued. TA = +25°C.
Parameters
Symbol
Condition
Delta limits
Device type 62
Reverse breakdown
voltage tolerance
Minimum operating
current
1/
VR
Min
Max
IR = 74 µA
-0.8
0.8
IR = 100 µA
-0.8
0.8
IR = 1 mA
-0.84
0.84
IR = 10 mA
-1.6
1.6
IR = 15 mA
-2.6
2.6
-0.623
0.623
IRMIN
1/
Units
mV
µA
This table represents the drift seen from initial measurements post 1,000 hour operational life
burn in. All units will remain within the electrical characteristics limits post 1, 000 hour operational
life burn-in. Deltas required for device class V product at group B, subgroup 5.
Deltas are performed at room temperature.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the post irradiation end-point
electrical parameter limits as defined in table IA at TA = +25°C ±5°C, after exposure, to the subgroups specified in
table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition D and paragraph 3.13.3.b, as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
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6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime -VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-09235
A
REVISION LEVEL
C
SHEET
15
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 13-10-02
Approved sources of supply for SMD 5962-09235 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R0923561VZA
27014
LM4050WG2.5RLQV
5962R0923562VZA
27014
LM4050WG5.0RLQV
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
27014
Vendor name
and address
National Semiconductor
2900 Semiconductor Drive
P.O. Box 58090
Santa Clara, CA 95052-8090
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.