LT1222 500MHz, 3nV/√Hz, AV ≥ 10 Operational Amplifier U DESCRIPTIO FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Gain-Bandwidth: 500MHz Gain of 10 Stable Uncompensated Slew Rate: 200V/µs Input Noise Voltage: 3nV/√Hz C-LoadTM Op Amp Drives Capacitive Loads External Compensation Pin Maximum Input Offset Voltage: 300µV Maximum Input Bias Current: 300nA Maximum Input Offset Current: 300nA Minimum Output Swing Into 500Ω: ±12V Minimum DC Gain: 100V/mV, RL = 500Ω Settling Time to 0.1%: 75ns, 10V Step Settling Time to 0.01%: 120ns, 10V Step Differential Gain: 0.4%, AV = 2, RL = 150Ω Differential Phase: 0.1°, AV = 2, RL = 150Ω The LT1222 is a low noise, very high speed operational amplifier with superior DC performance. The LT1222 is stable in a noise gain of 10 or greater without compensation, or the part can be externally compensated for lower closed-loop gain at the expense of lower bandwidth and slew rate. It features reduced input offset voltage, lower input bias currents, lower noise and higher DC gain than devices with comparable bandwidth and slew rate. The circuit is a single gain stage that includes proprietary DC gain enhancement circuitry to obtain precision with high speed. The high gain and fast settling time make the circuit an ideal choice for data acquisition systems. The circuit is also capable of driving capacitive loads which makes it useful in buffer or cable driver applications. The compensation node can also be used to clamp the output swing. UO APPLICATI ■ ■ ■ ■ ■ Wideband Amplifiers Buffers Active Filters Video and RF Amplification Cable Drivers 8-, 10-, 12-Bit Data Acquisition Systems and LTC are registered trademarks and LT is a trademark of Linear Technology Corporation. C-Load is a trademark of Linear Technology Cortporation. U ■ The LT1222 is a member of a family of fast, high performance amplifiers that employ Linear Technology Corporation’s advanced complementary bipolar processing. For unity-gain stable applications the LT1220 can be used, and for gains of 4 or greater the LT1221 can be used. S TYPICAL APPLICATION AV = 10 with Output Clamping AV = – 1, CC = 30pF Pulse Response 15V 3k 1N5711 VIN 3 + 1N4148 0.1µF 5 LT1222 2 1N5711 6 VOUT ≤ 0.5V – 909Ω 100Ω LT1222 • TA01 RF = RG = 1k VS = ±15V VIN = 100mV f = 5MHz LT1222 • TA02 1 LT1222 W W W AXI U U ABSOLUTE RATI GS Total Supply Voltage (V + to V –) ............................. 36V Differential Input Voltage ........................................ ±6V Input Voltage .......................................................... ±VS Output Short-Circuit Duration (Note 1) ........... Indefinite Specified Temperature Range LT1222C (Note 2) ................................... 0°C to 70°C LT1222M ......................................... – 55°C to 125°C Operating Temperature Range LT1222C ........................................... – 40°C TO 85°C LT1222M ......................................... – 55°C to 125°C Maximum Junction Temperature (See Below) Plastic Package ............................................... 150°C Ceramic Package ............................................. 175°C Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec)................. 300°C U W U PACKAGE/ORDER I FOR ATIO ORDER PART NUMBER TOP VIEW NULL 8 NULL 1 6 VOUT –IN 2 +IN 3 7 V+ 5 NC 4 SPECIAL ORDER CONSULT FACTORY ORDER PART NUMBER TOP VIEW NULL 1 8 NULL –IN 2 7 V+ +IN 3 6 VOUT V– 4 5 NC J8 PACKAGE 8-LEAD CERAMIC DIP – V H PACKAGE 8-LEAD TO-5 METAL CAN N8 PACKAGE 8-LEAD PLASTIC DIP S8 PACKAGE 8-LEAD PLASTIC SOIC LT1222CN8 LT1222MJ8 LT1222CS8 S8 PART MARKING 1222 TJMAX = 175°C, θJA = 100°C/W (J) TJMAX = 150°C, θJA = 130°C/W (N) TJMAX = 150°C, θJA = 190°C/W (S) TJMAX = 175°C, θJA = 150°C/W Consult factory for Industrial grade parts. ELECTRICAL CHARACTERISTICS SYMBOL VOS IOS IB en in RIN PARAMETER Input Offset Voltage Input Offset Current Input Bias Current Input Noise Voltage Input Noise Current Input Resistance CIN Inut Capacitance Input Voltage Range (Positive) Input Voltage Range (Negative) Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Output Swing Output Current Slew Rate Full Power Bandwidth Gain-Bandwidth CMRR PSRR AVOL VOUT IOUT SR GBW 2 VS = ±15V, TA = 25°C, VCM = 0V, unless otherwise specified. CONDITIONS (Note 3) f = 10kHz f = 10kHz VCM = ±12V Differential MIN 20 12 VCM = ±12V VS = ±5V to ±15V VOUT = ±10V, RL = 500Ω RL = 500Ω VOUT = ±12V (Note 4) 10V Peak (Note 5) f = 1MHz 100 98 100 12 24 150 TYP 100 100 100 3 2 45 12 2 14 – 13 120 110 200 13 26 200 3.2 500 MAX 300 300 300 – 12 UNITS µV nA nA nV/√Hz pA/√Hz MΩ kΩ pF V V dB dB V/mV ±V mA V/µs MHz MHz LT1222 ELECTRICAL CHARACTERISTICS SYMBOL tr, tf ts PARAMETER Rise Time, Fall Time Overshoot Propagation Delay Settling Time Differential Gain Differential Phase RO IS Output Resistance Supply Current VS = ±15V, TA = 25°C, VCM = 0V, unless otherwise specified. CONDITIONS AV = 10, 10% to 90%, 0.1V AV = 10, 0.1V AV = 10, 50% VIN to 50% VOUT, 0.1V 10V Step, 0.1% 10V Step, 0.01% AV = 2, CC = 50pF, f = 3.58MHz, RL = 150Ω (Note 6) AV = 10, CC = 0pF, f = 3.58MHz, RL = 1k (Note 6) AV = 2, CC = 50pF, f = 3.58MHz, RL = 150Ω (Note 6) AV = 10, CC = 0pF, f = 3.58MHz, RL = 1k (Note 6) AV = 10, f = 1MHz MIN TYP 2.4 45 5.2 75 120 0.40 0.15 0.10 0.01 0.1 8 MAX TYP 100 5 100 100 120 110 200 13 26 200 8 MAX 600 TYP 100 5 100 100 120 110 200 13 13 26 13 200 8 MAX 600 10.5 UNITS ns % ns ns ns % % DEG DEG Ω mA VS = ±15V, 0°C ≤ TA ≤ 70°C, VCM = 0V, unless otherwise specified. SYMBOL VOS IOS IB CMRR PSRR AVOL VOUT IOUT SR IS PARAMETER Input Offset Voltage Input VOS Drift Input Offset Current Input Bias Current Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Output Swing Output Current Slew Rate Supply Current CONDITIONS (Note 3) MIN ● ● ● VCM = ±12V VS = ±5V to ±15V VOUT = ±10V, RL = 500Ω RL = 500Ω VOUT = ±12V (Note 4) ● ● ● ● ● ● 100 98 100 12 24 150 ● 400 400 11 UNITS µV µV/°C nA nA dB dB V/mV ±V mA V/µs mA VS = ±15V, – 55°C ≤ TA ≤ 125°C, VCM = 0V, unless otherwise specified. SYMBOL VOS IOS IB CMRR PSRR AVOL VOUT PARAMETER Input Offset Voltage Input VOS Drift Input Offset Current Input Bias Current Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Output Swing IOUT Output Current SR IS Slew Rate Supply Current CONDITIONS (Note 3) MIN ● ● ● VCM = ±12V VS = ±5V to ±15V VOUT = ±10V, RL = 500Ω RL = 500Ω RL = 1k VOUT = ±10V VOUT = ±12V (Note 4) The ● denotes specifications which apply over the full temperature range. Note 1: A heat sink may be required when the output is shorted indefinitely. Note 2: Commercial parts are designed to operate over – 40°C to 85°C, but are not tested nor guaranteed beyond 0°C to 70°C. Industrial grade parts specified and tested over – 40°C to 85°C are available on special request. Consult factory. ● ● ● ● ● ● ● ● ● 98 98 50 10 12 20 12 110 800 1000 11 UNITS µV µV/°C nA nA dB dB V/mV ±V ±V mA mA V/µs mA Note 3: Input offset voltage is pulse tested and is exclusive of warm-up drift. Note 4: Slew rate is measured between ±10V on an output swing of ±12V. Note 5: FPBW = SR/2πVP. Note 6: Differential Gain and Phase are tested with five amps in series. Attenuators of 1/Gain are used as loads. 3 LT1222 U W TYPICAL PERFORMANCE CHARACTERISTICS Input Common-Mode Range vs Supply Voltage Supply Current vs Supply Voltage and Temperature 20 10 15 +VCM 10 –VCM 5 T = 125°C 9 T = 25°C 8 7 6 0 T = – 55°C 5 5 10 15 SUPPLY VOLTAGE (±V) 20 5 10 15 SUPPLY VOLTAGE (±V) LT1222 • TPC01 10 ± 5V SUPPLIES 100 1k LOAD RESISTANCE (Ω) 120 TA = 25°C 110 200 IB+ 100 IB– 0 –100 – 200 – 300 –500 –15 10k VS = ±15V 100 VS = ±5V 90 80 70 0 5 –10 –5 10 INPUT COMMON-MODE VOLTAGE (V) 10 15 LT1222 • TPC06 100 INPUT VOLTAGE NOISE (nV/√Hz) 35 30 25 VS = ±15V TA = 25°C AV = 101 RS = 100k 100 10 in 10 1 en 1 100 125 LT1222 • TPC07 10 100 1k 10k FREQUENCY (Hz) 0.1 100k LT1222 • TPC08 120 INPUT CURRENT NOISE (pA/√Hz) 40 10k Power Supply Rejection Ratio vs Frequency 1000 VS = ±5V 45 100 1k LOAD RESISTANCE (Ω) LT1222 • TPC05 Input Noise Spectral Density 50 OUTPUT SHORT-CIRCUIT CURRENT (mA) 20 Open-Loop Gain vs Resistive Load 300 Output Short-Circuit Current vs Temperature 4 5 10 15 SUPPLY VOLTAGE (±V) LT1222 • TPC03 VS = ±15V TA = 25°C LT1222 • TPC04 50 0 25 75 TEMPERATURE (°C) 5 –400 0 20 – 50 – 25 – VSW 0 OPEN-LOOP GAIN (dB) INPUT BIAS CURRENT (nA) OUTPUT VOLTAGE SWING (VP-P) 400 15 10 10 20 500 ±15V SUPPLIES 5 +VSW Input Bias Current vs Input Common-Mode Voltage TA = 25°C ∆VOS = 30mV 20 15 LT1222 • TPC02 Output Voltage Swing vs Resistive Load 25 TA = 25°C RL = 500Ω ∆VOS = 30mV 0 0 POWER SUPPLY REJECTION RATIO (dB) 0 30 MAGNITUDE OF OUTPUT VOLATGE (V) 11 TA = 25°C ∆VOS = 0.5mV SUPPLY CURRENT (mA) MAGNITUDE OF INPUT VOLTAGE (V) 20 Output Voltage Swing vs Supply Voltage VS = ±15V TA = 25°C 100 +PSRR 80 –PSRR 60 40 20 0 100 1k 10k 100k 1M FREQUENCY (Hz) 10M 100M LT1222 • TPC09 LT1222 U W TYPICAL PERFORMANCE CHARACTERISTICS Common-Mode Rejection Ratio vs Frequency Output Swing and Error vs Settling Time (Noninverting) VS = ±15V TA = 25°C 100 VS = ±15V TA = 25°C 8 6 60 40 10mV 4 2 0 –2 –4 10mV –6 20 0 10k 1M 100k FREQUENCY (Hz) 10M 100M 1mV 75 100 50 SETTLING TIME (ns) 40 40 20 VOLTAGE MAGNITUDE (dB) 26 C = 50pF 22 20 C=0 18 16 0 14 – 20 100M 10 C = 500pF 525 SLEW RATE (V/µs) 250 475 450 425 225 VS = ±15V AV = –10 CC = 0 (SR +) + (SR –) SR = 2 200 175 150 125 LT1222 • TPC16 1M 10M FREQUENCY (Hz) 125 – 50 – 25 0 25 50 75 TEMPERATURE (°C) 100M Total Harmonic Distortion vs Frequency 275 500 100k LT1222 • TPC15 Slew Rate vs Temperature VS = ±15V GAIN-BANDWIDTH (MHz) 0.01 LT1222 • TPC14 550 100 0.1 0.001 10k 100 10 FREQUENCY (MHz) LT1222 • TPC13 0 75 25 50 TEMPERATURE (°C) 1 C = 1000pF 1 Gain-Bandwidth vs Temperature 125 VS = ±15V TA = 25°C AV = 10 C = 100pF 24 12 10M 75 100 50 SETTLING TIME (ns) 10 TOTAL HARMONIC DISTORTION AND NOISE (%) VOLTAGE GAIN (dB) 60 PHASE MARGIN (DEG) 60 20 25 Closed-Loop Output Impedance vs Frequency VS = ±15V TA = 25°C AV = –10 28 80 VS = ±5V 0 1mV LT1222 • TPC12 30 100 VS = ±15V 10mV LT1222 • TPC11 VS = ±15V 400 – 50 – 25 125 Frequency Response vs Capacitive Load 120 TA = 25°C 0 100 10k 1M 100k 1k FREQUENCY (Hz) –4 –8 Voltage Gain and Phase vs Frequency VS = ±5V –2 –10 LT1222 • TPC10 100 2 –8 25 1mV 0 –10 0 10mV 4 –6 OUTPUT IMPEDANCE (Ω) 1k 1mV OUTPUT SWING (V) 80 VS = ±15V TA = 25°C 8 6 OUTPUT SWING (V) COMMON-MODE REJECTION RATIO (dB) 10 10 120 80 Output Swing and Error vs Settling Time (Inverting) 100 125 LT1222 • TPC17 0.01 VS = ±15V VO = 3VRMS RL = 500Ω 0.001 AV = ±10 0.0001 10 100 1k 10k FREQUENCY (Hz) 100k LT1222 • TPC18 5 LT1222 U W TYPICAL PERFORMANCE CHARACTERISTICS Large Signal, AV = 10, CL = 10,000pF Large Signal, AV = 10 Small Signal, AV = 10 RF = 909Ω VS = ±15V f = 5MHz RG = 100Ω VIN = 20mV RF = 909Ω VS = ±15V RG = 100Ω VIN = 2V LT1222 • TPC19 f = 2MHz LT1222 • TPC20 RF = 1k VS = ±15V f = 2MHz RG = 100Ω (75) VIN = 2V LT1222 • TPC22 LT1222 • TPC21 LT1222 • TPC23 VS = ±15V f = 500kHz RF = 1k RG = 100Ω (75) VIN = 15mV LT1222 • TPC24 U VS = ±15V f = 5MHz RF = 1k RG = 100Ω (75) VIN = 20mV f = 20kHz Small Signal, AV = – 10, CL = 1,000pF Large Signal, AV = – 10 Small Signal, AV = – 10 RF = 909Ω VS = ±15V RG = 100Ω VIN = 2V U W U APPLICATIONS INFORMATION The LT1222 is stable in noise gains of 10 or greater and may be inserted directly into HA2520/2/5, HA2541/2/4, AD817, AD847, EL2020, EL2044 and LM6361 applications, provided that the nulling circuitry is removed and the amplifier configuration has a high enough noise gain. The suggested nulling circuit for the LT1222 is shown in the following figure. Offset Nulling V+ 5k 1 3 + 0.1µF 8 7 LT1222 2 – 6 4 0.1µF V– 6 LT1222 • AI01 Layout and Passive Components The LT1222 amplifier is easy to apply and tolerant of less than ideal layouts. For maximum performance (for example, fast settling time) use a ground plane, short lead lengths and RF-quality bypass capacitors (0.01µF to 0.1µF). For high drive current applications use low ESR bypass capacitors (1µF to 10µF tantalum). Sockets should be avoided when maximum frequency performance is required. For more details see Design Note 50. Feedback resistors greater than 5k are not recommended because a pole is formed with the input capacitance which can cause peaking or oscillations. Stray capacitance on pin 5 should be minimized. Bias current cancellation circuitry is employed on the inputs of the LT1222 so the input bias current and input offset current have identical specifications. For this reason, matching the impedance on the inputs to reduce bias current errors is not necessary. LT1222 U W U U APPLICATIONS INFORMATION Output Clamping Access to the internal compensation node at pin 5 allows the output swing of the LT1222 to be clamped. An example is shown on the first page of this data sheet. The compensation node is approximately one diode drop above the output and can source or sink 1.2mA. Back-to-back Schottky diodes clamp pin 5 to a diode drop above ground so the output is clamped to ±0.5V (the drop of the Schottkys at 1.2mA). The diode reference is bypassed for good AC response. This circuit is useful for amplifying the voltage at false sum nodes used in settling time measurements. Capacitive Loading The LT1222 is stable with capacitive loads. This is accomplished by sensing the load induced output pole and adding compensation at the amplifier gain node. As the capacitive load increases, both the bandwidth and phase margin decrease. There will be peaking in the frequency domain as shown in the curve of Frequency Response vs Capacitive Load. The small-signal transient response will have more overshoot as shown in the photo of the small-signal response with 1000pF load. The large-signal response with a 10,000pF load shows the output slew rate being limited to 4V/µs by the short-circuit current. The LT1222 can drive coaxial cable directly, but for best pulse fidelity a resistor of value equal to the characteristic impedance of the cable (i.e., 75Ω) should be placed in series with the output. The other end of the cable should be terminated with the same value resistor to ground. Compensation The LT1222 has a typical gain-bandwidth product of 500MHz which allows it to have wide bandwidth in high gain configurations (i.e., in a gain of 100, it will have a bandwidth of about 5MHz). For added flexibility the amplifier frequency response may be adjusted by adding capacitance from pin 5 to ground. The compensation capacitor may be used to reduce overshoot, to allow the amplifier to be used in lower noise gains, or simply to reduce bandwidth. Table 1 shows gain and compensation capacitor vresus – 3dB bandwidth, maximum frequency peaking and small-signal overshoot. Table 1 AV CC (pF) f – 3dB (MHz) Max Peaking (dB) Overshoot (%) –1 30 99 4.2 36 –1 50 70 0.9 13 –1 82 32 0 0 –1 150 13 0 0 5 10 140 3.8 35 5 20 100 0 5 5 30 34 0 1 5 50 15 0 0 10 0 150 9.5 45 10 5 111 0.2 10 10 10 40 0 2 10 20 17 0 0 20 0 82 0.1 10 20 5 24 0 0 20 10 14 0 0 For frequencies < 10MHz the frequency response of the amplifier is approximately: f = 1/[2π × 53Ω × (CC + 6pF) × (Noise Gain)] The slew rate is affected as follows: SR = 1.2mA/(CC + 6pF) An example would be a gain of –10 (noise gain of 11) and CC = 20pF which has 10.5MHz bandwidth and 46V/µs slew rate. It should be noted that the LT1222 is not stable in AV = 1 unless CC = 50pF and a 1k resistor is used as the feedback resistor. The 1k and input capacitance increase the noise gain at frequency to aid stability. 7 LT1222 U TYPICAL APPLICATIONS N VOS Null Loop Two Op Amp Instrumemtation Amplifier R5 220Ω 150k 150k 1 + VIN R1 10k 8 VOUT AV = 1001 LT1222 – R2 1k – 25k LT1220 10k 100pF 10k – 25Ω R4 10k + R3 1k – VOUT LT1222 + VIN + – 100pF GAIN = [R4/R3][1 + (1/2)(R2/R1 + R3/R4) + (R2 + R3)/R5] = 102 TRIM R5 FOR GAIN TRIM R1 FOR COMMON-MODE REJECTION BW = 3MHz LT1222 • TA04 LT1097 LT1222 • TA03 + W W SI PLIFIED SCHE ATIC V+ 7 NULL 1 8 BIAS 2 BIAS 1 COMP 5 6 OUT +IN 3 2 –IN V– 4 LT1222 • SS 8 LT1222 U PACKAGE DESCRIPTION Dimensions in inches (millimeters) unless otherwise noted. H8 Package 8-Lead TO-5 Metal Can 0.335 – 0.370 (8.509 – 9.398) DIA 0.305 – 0.335 (7.747 – 8.509) 0.040 (1.016) MAX 0.050 (1.270) MAX SEATING PLANE 0.027 – 0.034 (0.686 – 0.864) 0.165 – 0.185 (4.191 – 4.699) GAUGE PLANE 0.010 – 0.045 (0.254 – 1.143) 0.016 – 0.021 (0.406 – 0.533) 0.027 – 0.045 (0.686 – 1.143) 45°TYP 0.200 – 0.230 (5.080 – 5.842) BSC REFERENCE PLANE 0.500 – 0.750 (12.700 – 19.050) NOTE: LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE AND SEATING PLANE. 0.110 – 0.160 (2.794 – 4.064) INSULATING STANDOFF H8(5) 0592 J8 Package 8-Lead Ceramic Dip CORNER LEADS OPTION (4 PLCS) 0.023 – 0.045 (0.584 – 1.143) HALF LEAD OPTION 0.045 – 0.068 (1.143 – 1.727) FULL LEAD OPTION 0.005 (0.127) MIN 0.405 (10.287) MAX 8 7 6 5 0.025 (0.635) RAD TYP 0.220 – 0.310 (5.588 – 7.874) 1 2 3 4 0.200 (5.080) MAX 0.300 BSC (0.762 BSC) 0.015 – 0.060 (0.381 – 1.524) 0.008 – 0.018 (0.203 – 0.457) 0.385 ± 0.025 (9.779 ± 0.635) 0° – 15° 0.045 – 0.068 (1.143 – 1.727) 0.014 – 0.026 (0.360 – 0.660) NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS. 0.125 3.175 0.100 ± 0.010 MIN (2.540 ± 0.254) J8 0694 9 LT1222 U PACKAGE DESCRIPTION Dimensions in inches (millimeters) unless otherwise noted. N8 Package 8-Lead Plastic Dip 0.400* (10.160) MAX 8 7 6 5 1 2 3 4 0.255 ± 0.015* (6.477 ± 0.381) 0.300 – 0.325 (7.620 – 8.255) 0.009 – 0.015 (0.229 – 0.381) ( +0.025 0.325 –0.015 +0.635 8.255 –0.381 ) 0.045 – 0.065 (1.143 – 1.651) 0.065 (1.651) TYP 0.045 ± 0.015 (1.143 ± 0.381) 0.100 ± 0.010 (2.540 ± 0.254) *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTURSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm). 10 0.130 ± 0.005 (3.302 ± 0.127) 0.125 (3.175) MIN 0.018 ± 0.003 (0.457 ± 0.076) 0.015 (0.380) MIN N8 0694 LT1222 U PACKAGE DESCRIPTION Dimensions in inches (millimeters) unless otherwise noted. S8 Package 8-Lead Plastic SOIC 0.189 – 0.197* (4.801 – 5.004) 8 7 6 5 0.150 – 0.157* (3.810 – 3.988) 0.228 – 0.244 (5.791 – 6.197) 1 0.010 – 0.020 × 45° (0.254 – 0.508) 0.008 – 0.010 (0.203 – 0.254) 2 3 4 0.053 – 0.069 (1.346 – 1.752) 0.004 – 0.010 (0.101 – 0.254) 0°– 8° TYP 0.016 – 0.050 0.406 – 1.270 0.014 – 0.019 (0.355 – 0.483) 0.050 (1.270) BSC SO8 0294 *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 INCH (0.15mm). Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT1222 U.S. Area Sales Offices NORTHEAST REGION Linear Technology Corporation 3220 Tillman Drive, Suite 120 Bensalem, PA 19020 Phone: (215) 638-9667 FAX: (215) 638-9764 Linear Technology Corporation 266 Lowell St., Suite B-8 Wilmington, MA 01887 Phone: (508) 658-3881 FAX: (508) 658-2701 SOUTHEAST REGION Linear Technology Corporation 17060 Dallas Parkway Suite 208 Dallas, TX 75248 Phone: (214) 733-3071 FAX: (214) 380-5138 SOUTHWEST REGION Linear Technology Corporation 22141 Ventura Blvd. Suite 206 Woodland Hills, CA 91364 Phone: (818) 703-0835 FAX: (818) 703-0517 CENTRAL REGION Linear Technology Corporation Chesapeake Square 229 Mitchell Court, Suite A-25 Addison, IL 60101 Phone: (708) 620-6910 FAX: (708) 620-6977 NORTHWEST REGION Linear Technology Corporation 782 Sycamore Dr. Milpitas, CA 95035 Phone: (408) 428-2050 FAX: (408) 432-6331 International Sales Offices FRANCE Linear Technology S.A.R.L. Immeuble "Le Quartz" 58 Chemin de la Justice 92290 Chatenay Malabry France Phone: 33-1-41079555 FAX: 33-1-46314613 KOREA Linear Technology Korea Branch Namsong Building, #505 Itaewon-Dong 260-199 Yongsan-Ku, Seoul Korea Phone: 82-2-792-1617 FAX: 82-2-792-1619 TAIWAN Linear Technology Corporation Rm. 801, No. 46, Sec. 2 Chung Shan N. Rd. Taipei, Taiwan, R.O.C. Phone: 886-2-521-7575 FAX: 886-2-562-2285 GERMANY Linear Techonolgy GmbH Untere Hauptstr. 9 D-85386 Eching Germany Phone: 49-89-3197410 FAX: 49-89-3194821 SINGAPORE Linear Technology Pte. Ltd. 507 Yishun Industrial Park A Singapore 2776 Phone: 65-753-2692 FAX: 65-754-4113 UNITED KINGDOM Linear Technology (UK) Ltd. The Coliseum, Riverside Way Camberley, Surrey GU15 3YL United Kingdom Phone: 44-276-677676 FAX: 44-276-64851 JAPAN Linear Technology KK 5F YZ Bldg. 4-4-12 Iidabashi, Chiyoda-Ku Tokyo, 102 Japan Phone: 81-3-3237-7891 FAX: 81-3-3237-8010 World Headquarters Linear Technology Corporation 1630 McCarthy Blvd. Milpitas, CA 95035-7487 Phone: (408) 432-1900 FAX: (408) 434-0507 0794 12 Linear Technology Corporation LT/GP 0894 5K REV A • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977 LINEAR TECHNOLOGY CORPORATION 1992