SANYO LV8013T-A-TLM-E

Ordering number : ENA0907A
Bi-CMOS IC
LV8013T
Forward/Reverse Motor Driver
Overview
LV8013T is a 1ch forward/reverse motor driver IC using D-MOS FET for output stage. As MOS circuit is used, it supports
the PWM input. Its features are that the on resistance (0.3Ω typ) and current dissipation are low.
It also provides protection functions such as heat protection circuit and reduced voltage detection and is optimal for the
motors that need high-current.
Functions
• 1ch forward/reverse motor driver
• Possible to respond to 3V control voltage and 6V motor voltage device
• Low power consumption
• Low-temperature resistance 0.5Ω
• Built-in charge pump circuit
• Built-in low voltage reset and thermal shutdown circuit
• Four mode function forward/reverse, brake, stop.
Specifications
Maximum Ratings at Ta = 25°C, SGND = PGND = 0V
Parameter
Supply voltage (For load)
Symbol
Conditions
VM max
Supply voltage (For control)
VCC max
Output current
IO max
Ratings
Unit
-0.5 to 16
V
-0.5 to 6.0
V
DC
1.2
A
IO peak1
t ≤ 100ms, f = 5Hz
2.0
A
IO peak2
t ≤ 10ms, f = 5Hz
3.8
A
Input voltage
VIN max
-0.5 to VCC+0.5
Allowable power dissipation
Pd max
Operating temperature
Topr
-20 to +75
°C
Storage temperature
Tstg
-55 to +150
°C
Mounted on a specified board *
800
V
mW
*Specified board : 30mm × 50mm × 1.6mm, glass epoxy board.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
http://semicon.sanyo.com/en/network
N2608 MS / 80107 MS PC B8-9208 No.A0907-1/6
LV8013T
Allowable Operating Conditions at Ta = 25°C, SGND = PGND = 0V
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage (For load)
VM
2.0 to 15.0
Supply voltage (For control)
VCC
2.7 to 5.5
V
Input signal voltage
VIN
0 to VCC
V
Input signal frequency
f max
Capacitor for charge pump
C1, C2,
Duty = 50%
V
200
kHz
0.001 to 0.1
µF
CVG1, CVG2
Electrical Characteristics at Ta = 25°C, VCC = 5.0V, VM = 12.0V, SGND = PGND = 0V, unless especially specified.
Parameter
Supply current for load at
Symbol
Conditions
Ratings
Remarks
min
typ
Unit
max
IM1
EN = 0V
1
1.0
µA
IM2
VCC = 0V, Each input = 0V
1
1.0
µA
ICO
EN = 0V, IN1 = IN2 = 0V
2
25
50
µA
standby 1
Supply current for load at
standby 2
Supply current for control at
12.5
standby
Current drain during operation 1
IC1
VCC = 3.3V, EN = 3.3V, VG at no load
3
0.6
1.0
mA
Current drain during operation 2
IC2
VCC = 5.0V, EN = 5V, VG at no load
3
0.7
1.2
mA
H-level input voltage
VIH
2.7V ≤ VCC ≤ 5.5V
L-level input voltage
VIL
2.7V ≤ VCC ≤ 5.5V
H-level input current
IIH
VIN = 5V
4
12.5
IIL
VIN = 0V
4
-1.0
0.6×VCC
VCC
0
25
V
0.2×VCC
V
50
µA
(IN1, IN2, TIN)
L-level input current
µA
(IN1, IN2, TIN)
Pull-up resistance (EN)
RUP
4
100
200
400
kΩ
Pull-down resistance
RDN
4
100
200
400
kΩ
0.3
0.5
Ω
(EN)
Output ON resistance
RON
Sum of ON resistances at top and
5
bottom
Charge pump voltage1
VG1
VCC×2 - 5.4V CLAMP circuit
6
5.15
5.4
5.65
V
Charge pump voltage2
VG2
VM + VG1 Voltage raising circuit
6
17.1
17.4
17.6
V
Low-voltage detection operation
VCS
VCC voltage
7
2.1
2.25
2.4
V
Tth
Design guarantee
8
150
180
210
°C
Charge pump capacity 1
VG1LOAD
IG1 = 500µA
9
5.0
5.3
Charge pump capacity 2
VG2LOAD
IG2 = 500µA
9
16.0
16.5
IG current dissipation
IG
voltage
Thermal shutdown operation
temperature
10
V
V
350
µA
(Fin = 20kHz)
Charge pump start time
TVG
Output
TPLH
Turn on time
CVG = 0.1µF
11
12
1.0
ms
0.5
1.0
µs
block
Turn off time
TPHL
12
0.5
1.0
µs
TOUT
Turn on time
TON
C = 500pF
12
0.5
20
µs
Turn off time
TOFF
C = 500pF
12
0.5
20
µs
TOUT output voltage H
TOH
C = 500pF
TOUT output voltage L
TOL
C = 500pF
VG2-0.1
VG2
0.05
V
0.1
V
* Design guarantee : This characteristics is not measured.
Refer to next page for remarks.
No.A0907-2/6
LV8013T
Remarks
1. It shows current dissipation of VM pin in output OFF state.
2. It shows current dissipation of VCC pin in stand-by state.
(The standard current depends on EN pin pull-down resistor.)
3. It shows current dissipation of VCC pin in state of EN = 5V (stand-by), including current dissipation of VG pin.
4. IN1, IN2 and TIN pin are built-in pull-down resistor, EN pin is built-in pull-up resistor.
5. It shows sum of upper and lower saturation voltages of OUT pin.
6. It controls charge-pump oscillation and makes specified voltage.
7. When low voltage is detected, the lower output is turned OFF.
8. When thermal protection circuit is activated, the lower output is turned OFF.
When the heat temperature is fallen, it is turned ON again.
9. IG (VG pin load current) = 500µA
10. It shows VG pin current dissipation in state of PWM input for IN pin.
11. It specifies start-up time from 10% to 90% when VG is in non-load state
(when setting the capacitor between VG and GND to 0.1µF and VCC is 5V).
12. It specifies 10% to 90% for start-up and 90% to 10% for shut-down.
Package Dimensions
unit : mm (typ)
3260A
Pd max -- Ta
Allowable power dissipation, Pd max -- mW
1000
6.5
0.5
6.4
13
4.4
24
12
1
0.5
0.15
0.22
1.2max
(1.0)
(0.5)
Specified board: 30×50×1.6mm3
glass epoxy board.
800
600
480
400
200
0
-20
0
20
40
60
75 80
100
0.08
Ambient temperature, Ta -- °C
SANYO : TSSOP24(225mil)
VG2
VM
OUT2
OUT2
NC
PGND
PGND
NC
NC
OUT1
OUT1
VM
Pin Assignment
24
23
22
21
20
19
18
17
16
15
14
13
1
2
3
4
5
6
7
8
9
10
11
12
SGND
C2H
C2L
VG1
C1H
C1L
VCC
IN1
IN2
EN
TIN
TOUT
LV8013T
Top view
No.A0907-3/6
LV8013T
Block Diagram
CH2
VG1
OSC,CHARGE_PUMP
CL2
VG2
CH1
Low-voltage
thermal
protection
CL1
TOUT
OUT1
LEVEL
SHIFTER
VM
VCC
IN1
CMOS
LOGIC
IN2
OUT2
PGND
TIN
Deffused
resistor
EN
SGND
Truth Table
EN
H
L
IN1
IN2
TIN
OUT1
OUT2
TOUT
H
H
-
L
L
-
H
L
-
H
L
-
Forward
L
H
-
L
H
-
Reverse
L
L
-
Z
Z
-
Standby
Tr-OFF
-
-
L
-
-
L
-
-
H
-
-
H
-
-
-
L
L
L
Charge Pump
Mode
Brake
ON
Tr-ON
OFF
Standby
- : Don’t care, Z : High-Impedance
· Current drain becomes zero in the standby mode. (Leak current from EN pin is excluded)
· The output side becomes OFF, with motor drive stopped, during voltage reduction and thermal protection.
Also, the charge of VG2 is discharged with an internal circuit at decreasing voltage.
Pin Function
Pin No.
Pin name
6
C1L
Function
Equivalent circuit
Voltage raising capacitor connection pin.
VCC
C1L
5
C1H
Voltage raising capacitor connection pin.
VG1
C1H
8
IN1
9
IN2
11
TIN
· Driver output changeover.
VCC
· TOUT output control pin.
(Built-in pull-down resistor)
200kΩ
Continued on next page.
No.A0907-4/6
LV8013T
Continued from preceding page.
Pin No.
Pin name
10
EN
Function
Equivalent circuit
Logic enable pin.
VCC
(Built-in pull-up resistor)
200kΩ
14
OUT1
15
OUT1
21
OUT2
22
OUT2
18
PGND
19
PGND
Driver output pin.
VM
OUT1
OUT2
PGND
12
TOUT
Voltage raising output pin.
13
VM
23
VM
Motor power supply.
(both terminals to be connected)
7
VCC
Logic power supply.
4
VG1
VG2
Voltage raising circuit 1.
VG1
VCC × 2
Clamped to 5.4V
0.1µF
C1H
0.01µF
C1L
24
VG2
2
C2H
3
C2L
· Voltage raising circuit 2.
VM + VG1
VM
VG2
· Voltage raising capacitor connection pin.
0.1µF
VG2 is discharged in abnormal.
C2H
0.01µF
C2L
1
SGND
Logic GND
18
PGND
Driver GND
19
PGND
(both terminals to be connected)
No.A0907-5/6
LV8013T
Application Circuit Example
C2H
VG2
CVG2
=0.1µF
C2=0.01µF
C2L
TOUT
CVG1=0.1µF
VG1
VM
2.7V to 5.5V
C2H
*1
C1=0.01µF
2.7V to 5.5V
C2L
OUT2
VCC
OUT2
IN1
PGND
IN2
PGND
EN
OUT1
TIN
OUT1
M
CPU
SGND
VM
*1 : Connect a kickback absorption capacitor directly near IC. Coil kick-back may cause rise of the voltage of VM line,
and the voltage exceeding the maximum rating may be applied momentarily, resulting in deterioration or damage of
IC.
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ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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This catalog provides information as of November, 2008. Specifications and information herein are subject
to change without notice.
PS No.A0907-6/6