M28010 1 Mbit (128K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA ■ Fast Access Time: 100 ns ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28010 – 2.7 V to 3.6 V for M28010-W – 1.8 V to 2.4 V for M28010-R ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 128 Bytes) ■ Enhanced Write Detection and Monitoring: 32 1 PDIP32 (BA) – Data Polling – Toggle Bit – Page Load Timer Status ■ JEDEC Approved Bytewide Pin-Out ■ Software Data Protection ■ Hardware Data Protection ■ Software Chip Erase ■ 100000 Erase/Write Cycles (minimum) ■ Data Retention (minimum): 10 Years DESCRIPTION The M28010 devices consist of 128Kx8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V, 3V or 2V, depending on the option chosen). TSOP32 (NA) 8 x 20 mm PLCC32 (KA) Figure 1. Logic Diagram VCC 17 8 A0-A16 DQ0-DQ7 Table 1. Signal Names A0-A16 Address Input DQ0-DQ7 Data Input / Output W Write Enable E Chip Enable G Output Enable VCC Supply Voltage VSS Ground W M28010 E G VSS AI02221 February 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/23 M28010 Figure 2C. TSOP Connections Figure 2A. DIP Connections DU A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VCC W DU A14 A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 32 31 30 29 28 27 26 M28010 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 A14 DU W VCC DU A16 A15 A12 A7 A6 A5 A4 1 8 9 16 AI02222 32 M28010 25 24 17 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 AI02224 Note: 1. DU = Do Not Use Figure 2B. PLCC Connections data retention. The organization of the data in a 4 byte (32-bit) “word” format leads to significant savings in power consumption. Once a byte has been read, subsequent byte read cycles from the same “word” (with addresses differing only in the two least significant bits) are fetched from the previously loaded Read Buffer, not from the memory array. As a result, the power consumption for these subsequent read cycles is much lower than the power consumption for the first cycle. By careful design of the memory access patterns, a 50% reduction in the power consumption is possible. A12 A15 A16 DU VCC W DU Note: 1. DU = Do Not Use 1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 M28010 9 25 A14 A13 A8 A9 A11 G A10 E DQ7 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 17 AI02223 Note: 1. DU = Do Not Use The device has been designed to offer a flexible microcontroller interface, featuring both hardware and software hand-shaking, with Data Polling and Toggle Bit. The device supports a 128 byte Page Write operation. Software Data Protection (SDP) is also supported, using the standard JEDEC algorithm. The M28010 is designed for applications requiring as much as 100,000 write cycles and ten years of 2/23 SIGNAL DESCRIPTION The external connections to the device are summarized in Table 1, and their use in Table 3. Addresses (A0-A16). The address inputs are used to select one byte from the memory array during a read or write operation. Data In/Out (DQ0-DQ7). The contents of the data byte are written to, or read from, the memory array through the Data I/O pins. Chip Enable (E). The chip enable input must be held low to enable read and write operations. When Chip Enable is high, power consumption is reduced. Output Enable (G). The Output Enable input controls the data output buffers, and is used to initiate read operations. M28010 Table 2. Absolute Maximum Ratings 1 Symbol Parameter Value Unit Ambient Operating Temperature –40 to 85 °C T STG Storage Temperature –65 to 150 °C VCC Supply Voltage –0.3 to VCCMAX+1 V VIO Input or Output Voltage (except A9) –0.3 to V CC+0.6 V VI Input Voltage –0.3 to 4.5 V 2000 V TA Electrostatic Discharge Voltage (Human Body model) 2 VESD Note: 1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the ST SURE Program and other relevant quality documents. 2. MIL-STD-883C, 3015.7 (100 pF, 1500 Ω) A7-A16 (Page Address) A0-A6 ADDRESS LATCH ADDRESS LATCH X DECODE Figure 3. Block Diagram 1Mbit ARRAY LATCH PAGE REFERENCES Y DECODE E G CONTROL LOGIC VPP GEN VREAD GEN PROGRAMMING STATE MACHINE SENSE PAGE & DATA LATCH ECC (1) & MULTIPLEXER W I/O BUFFERS DQ0-DQ7 AI02225 3/23 M28010 Table 3. Operating Modes 1 Mode E G W DQ0-DQ7 Read VIL V IL VIH Data Out Write VIL VIH VIL Data In Stand-by / Write Inhibit V IH X X Hi-Z Write Inhibit X X VIH Data Out or Hi-Z Write Inhibit X V IL X Data Out or Hi-Z Output Disable X VIH X Hi-Z Note: 1. X = VIH or VIL. Write Enable (W). The Write Enable input controls whether the addressed location is to be read, from or written to. DEVICE OPERATION In order to prevent data corruption and inadvertent write operations, an internal VCC comparator inhibits the Write operations if the V CC voltage is lower than VWI (see Table 4A to Table 4C). Once the voltage applied on the VCC pin goes over the VWI threshold (VCC>VWI), write access to the memory is allowed after a time-out tPUW, as specified in Table 4A to Table 4C. Further protection against data corruption is offered by the E and W low pass filters: any glitch, on the E and W inputs, with a pulse width less than 10 ns (typical) is internally filtered out to prevent inadvertent write operations to the memory. Table 4A. Power-Up Timing1 for M28010 (5V range) (TA = –40 to 85 °C; VCC = 4.5 to 5.5 V) Symbol Parameter Min. Max. Unit tPUR Time Delay to Read Operation 5 ms tPUW Time Delay to Write Operation (once VCC ≥ VWI) 5 ms VWI Write Inhibit Threshold 3.0 4.2 V Min. Max. Unit Note: 1. Sampled only, not 100% tested. Table 4B. Power-Up Timing1 for M28010-W (3V range) (TA = –40 to 85 °C; VCC = 2.7 to 3.6 V) Symbol Parameter tPUR Time Delay to Read Operation 5 ms tPUW Time Delay to Write Operation (once VCC ≥ VWI) 5 ms VWI Write Inhibit Threshold 2.0 2.6 V Min. Max. Unit Note: 1. Sampled only, not 100% tested. Table 4C. Power-Up Timing1 for M28010-R (2V range) (TA = –40 to 85 °C; VCC = 1.8 to 2.4 V) Symbol Parameter tPUR Time Delay to Read Operation 5 ms tPUW Time Delay to Write Operation (once VCC ≥ VWI) 5 ms VWI Write Inhibit Threshold Note: 1. Sampled only, not 100% tested. 4/23 1.2 1.7 V M28010 Read The device is accessed like a static RAM. When E and G are low, and W is high, the contents of the addressed location are presented on the I/O pins. Otherwise, when either G or E is high, the I/O pins revert to their high impedance state. Write Write operations are initiated when both W and E are low and G is high. The device supports both W-controlled and E-controlled write cycles (as shown in Figure 12 and Figure 13). The address is latched during the falling edge of W or E (which ever occurs later) and the data is latched on the rising edge of W or E (which ever occurs first). After a delay, tWLQ5H, that cannot be shorter than the value specified in Table 9A to Table 9C, the internal write cycle starts. It continues, under internal timing control, until the write operation is complete. The commencement of this period can be detected by reading the Page Load Timer Status on DQ5. The end of the internal write cycle Figure 4. Software Data Protection Enable Algorithms (with or without Memory Write) Page Write Timing SDP is Disabled and Application needs to Enable it, and Write Data SDP is Disabled and Application needs to Enable it Write AAh in Address 5555h Write AAh in Address 5555h Write 55h in Address 2AAAh Write 55h in Address 2AAAh Write A0h in Address 5555h Page Write Timing Write A0h in Address 5555h Write is enabled Time Out (tWLQ5H) Write data in any addresses within one page Wait for write completion (tQ5HQ5X) SDP is set Page Write Timing Time Out (tWLQ5H) Write AAh in Address 5555h Wait for write completion (tQ5HQ5X) Write 55h in Address 2AAAh DATA has been written and SDP is Enabled Write A0h in Address 5555h Write is enabled Write data in any addresses within one page Time Out (tWLQ5H) Wait for write completion (tQ5HQ5X) DATA has been written and SDP is Enabled AI02227B 5/23 M28010 Figure 5. Software Data Protection Disable Algorithms (with or without Memory Write) Page Write Timing SDP is Enabled and Application needs to Disable it SDP is Enabled and Application needs to Write Data Write AAh in Address 5555h Write AAh in Address 5555h Write 55h in Address 2AAAh Write 55h in Address 2AAAh Write 80h in Address 5555h Page Write Timing Write 80h in Address 5555h Write AAh in Address 5555h Write AAh in Address 5555h Write 55h in Address 2AAAh Write 55h in Address 2AAAh Write 20h in Address 5555h Write 20h in Address 5555h Time Out (tWLQ5H) Physical Write Instructions Write data in any addresses within one page Wait for write completion (tQ5HQ5X) SDP is Disabled Time Out (tWLQ5H) Wait for write completion (tQ5HQ5X) DATA has been written and SDP is Disabled AI02226B can be detected by reading the status of the Data Polling and the Toggle Bit functions on DQ7 and DQ6. Page Write The Page Write mode allows up to 128 bytes to be written on a single page in a single go. This is achieved through a series of successive Write operations, no two of which are separated by more than the tWLQ5H value (as specified in Table 9A to Table 9C). The page write can be initiated during any byte write operation. Following the first Byte Write instruction, the host may send another address and data with a minimum data transfer rate of: 1/t WLQ5H. The internal write cycle can start at any instant after tWLQ5H. Once initiated, the write operation is 6/23 internally timed, and continues, uninterrupted, until completion. All bytes must be located on the same page address (A16-A7 must be the same for all bytes). Otherwise, the Page Write operation is not executed. The Page Write Abort event is indicated to the application via DQ1 (as described on page 8). As with the single byte Write operation, described above, the DQ5, DQ6 and DQ7 lines can be used to detect the beginning and end of the internally controlled phase of the Page Write cycle. Software Data Protection (SDP) The device offers a software-controlled writeprotection mechanism that allows the user to inhibit all write operations to the device, including chip erase. This can be useful for protecting the M28010 Figure 6. Software Chip Erase Algorithm Write AAh in Address 5555h Write 55h in Address 2AAAh Page Write Timing Figure 7. Status Bit Assignment DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 DP TB PLTS X X X PWA SDP DP TB PLTS X PWA SDP Write 80h in Address 5555h = Data Polling = Toggle Bit = Page Load Timer Status = undefined = Page Write Abort = Software Data Protection AI02486B Write AAh in Address 5555h Figure 8. Software Data Protection Status Read Algorithm Write 55h in Address 2AAAh Write 10h in Address 5555h Write AAh in Address 5555h Time Out (tWLQ5H) Page Write Timing Write 55h in Address 2AAAh Wait for write completion (tQ5HQ5X) Write 20h in Address 5555h Whole Array has been Set to FFh AI02236C memory from inadvertent write cycles that may occur during periods of instability (uncontrolled bus conditions when excessive noise is detected, or when power supply levels are outside their specified values). By default, the device is shipped in the “unprotected” state: the memory contents can be freely changed by the user. Once the Software Data Protection Mode is enabled, all write commands are ignored, and have no effect on the memory contents. The device remains in this mode until a valid Software Data Protection disable sequence is received. The device reverts to its “unprotected” state. The status of the Software Data Protection (enabled or disabled) is represented by a nonvolatile latch, and is remembered across periods of the power being off. The Software Data Protection Enable command consists of the writing of three specific data bytes to three specific memory locations (each location being on a different page), as shown in Figure 4. Read SDP on DQ0 Write xxh in Address xxxxh Normal User Mode AI02237B Similarly, to disable the Software Data Protection, the user has to write specific data bytes into six different locations, as shown in Figure 5. This complex series of operations protects against the chance of inadvertent enabling or disabling of the Software Data Protection mechanism. When SDP is enabled, the memory array can still have data written to it, but the sequence is more complex (and hence better protected from inadvertent use). The sequence is as shown in Figure 5. This consists of an unlock key, to enable the write action, at the end of which the SDP continues to be enabled. This allows the SDP to be enabled, and data to be written, within a single Write cycle (tWC). 7/23 M28010 Software Chip Erase The device can be erased (with all bytes set to FFh) by using a six-byte software command code. This operation can be initiated only if the user loads, with a Page Write addressing mode, six specific data bytes to six specific locations (as shown in Figure 6). The complexity of the sequence has been designed to guard against inadvertent use of the command. Status Bits The devices provide five status bits (DQ7, DQ6, DQ5, DQ1 and DQ0) for use during write operations. These allow the application to use the write time latency of the device for getting on with other work. These signals are available on the I/O port bits DQ7, DQ6, DQ5, DQ1 and DQ0 (but only during the internal write cycle, tQ5HQ5X). Data Polling bit (DQ7). The internally timed write cycle starts as soon as tWLQ5H (defined in Table 9A to Table 9C) has elapsed since the previous byte was latched in to the memory. The value of the DQ7 bit of this last byte, is used as a signal throughout this write operation: it is inverted while the internal write operation is underway, and is inverted back to its original value once the operation is complete. Toggle bit (DQ6). The device offers another way for determining when the internal write cycle is running. During the internal write cycle, DQ6 toggles from ’0’ to ’1’ and ’1’ to ’0’ (the first read value being ’0’) on subsequent attempts to read any byte of the memory. When the internal write cycle is complete, the toggling is stopped, and the values read on DQ7-DQ0 are those of the addressed memory byte. This indicates that the device is again available for new Read and Write operations. Page Load Timer Status bit (DQ5). An internal timer is used to measure the period between successive Write operations, up to tWLQ5H (defined in Table 9A to Table 9C). The DQ5 line is held low to show when this timer is running (hence showing that the device has received one write operation, and is waiting for the next). The DQ5 line is held high when the counter has overflowed (hence showing that the device is now starting the internal write to the memory array). Page Write Abort bit (DQ1). During a page write operation, the A16 to A7 signals should be kept constant. They should not change while successive data bytes are being transferred to the internal latches of the memory device. If a change occurs on any of the pins, A16 to A7, during the page write operation (that is, before the falling edge of W or E, which ever occurs later), the internal write cycle is not started, and the internal circuitry is completely reset. The abort signal can be observed on the DQ1 pin, using a normal read operation. This can be performed at any time during the byte load cycle, tWLQ5H, or while the W input is being held high between two load cycles. The default value of DQ1 is initially set to ’0’ and changes to ’1’ if the internal circuitry has detected a change on any of the address pins A16 to A7. This PWA bit can be checked regardless of whether Software Data Protection is enabled or disabled. Table 5A. Read Mode DC Characteristics for M28010 (5V range) (TA = –40 to 85 °C; VCC = 4.5 to 5.5 V) Symbol Parameter Test Condition ILI Input Leakage Current ILO Output Leakage Current ICC 1 ICC1 1 Supply Current (CMOS inputs) Supply Current (Stand-by) CMOS Min. Max. Unit 0 V ≤ V IN ≤ VCC 5 µA 0 V ≤ VOUT ≤ VCC 5 µA E = VIL, G = VIL, f = 0.1 MHz 2 mA E = VIL, G = VIL, f = 5 MHz 22 mA E = VIL, G = VIL, f = 10 MHz 40 mA E > VCC – 0.3 V 50 µA V IL Input Low Voltage –0.3 0.8 V V IH Input High Voltage 2 VCC + 0.3 V VOL Output Low Voltage IOL = 2.1 mA 0.4 V VOH Output High Voltage IOH = –400 µA Note: 1. All inputs and outputs open circuit. 8/23 2.4 V M28010 Table 5B. Read Mode DC Characteristics for M28010-W (3V range) (TA = –40 to 85 °C; VCC = 2.7 to 3.6 V) Symbol Parameter Test Condition ILI Input Leakage Current ILO Output Leakage Current ICC 1 ICC1 1 Supply Current (CMOS inputs) Max. Unit 0 V ≤ V IN ≤ VCC 5 µA 0 V ≤ VOUT ≤ VCC 5 µA E = VIL, G = VIL, f = 0.1 MHz 2 mA E = VIL, G = VIL, f = 5 MHz 15 mA E = VIL, G = VIL , f = 10 MHz 26 mA E > VCC – 0.3 V 30 µA Supply Current (Stand-by) CMOS Min. V IL Input Low Voltage –0.3 0.6 V V IH Input High Voltage 2 VCC + 0.3 V VOL Output Low Voltage IOL = 1.6 mA 0.45 V VOH Output High Voltage IOH = –100 µA 2.4 V Note: 1. All inputs and outputs open circuit. Table 5C. Read Mode DC Characteristics for M28010-R (2V range) (TA = –40 to 85 °C; VCC = 1.8 to 2.4 V) Symbol Parameter Test Conditio n ILI Input Leakage Current ILO Output Leakage Current ICC 1 Supply Current (CMOS inputs) ICC1 1 Supply Current (Stand-by) CMOS Min. Max. Unit 0 V ≤ VIN ≤ V CC 5 µA 0 V ≤ VOUT ≤ VCC 5 µA E = V IL, G = VIL, f = 0.1 MHz, VCC = 2.4 V 2 mA E = VIL, G = VIL, f = 5 MHz, VCC = 2.4 V 12 mA E > VCC – 0.3 V 30 µA V IL Input Low Voltage –0.3 0.2 V V IH Input High Voltage VCC–0.3 VCC+0.3 V VOL Output Low Voltage IOL = 0.4 mA 0.15 V VOH Output High Voltage I OH = –100 µA VCC–0.15 V Note: 1. All inputs and outputs open circuit. Software Data Protection bit (DQ0). Reading the SDP bit (DQ0) allows the user to determine whether the Software Data Protection mode has been enabled (SDP=1) or disabled (SDP=0). The SDP bit (DQ0) can be read by using a dedicated algorithm (as shown in Figure 8), or can be combined with the reading of the DP bit (DQ7), TB bit (DQ6) and PLTS bit (DQ5). 9/23 M28010 Table 6. Input and Output Parameters1 (TA = 25 °C, f = 1 MHz) Symbol Parameter Test Condition Input Capacitance C IN C OUT Output Capacitance Min. Max. Unit V IN = 0 V 6 pF VOUT = 0 V 12 pF Note: 1. Sampled only, not 100% tested. Table 7. AC Measurement Conditions Figure 10. AC Testing Equivalent Load Circuit ≤ 5 ns Input Rise and Fall Times 0 V to VCC Input Pulse Voltages Input and Output Timing Ref. Voltages VCC/2 IOL Figure 9. AC Testing Input Output Waveforms DEVICE UNDER TEST OUT IOH VCC CL = 30pF VCC/2 0V AI02228 CL includes JIG capacitance AI02578 Table 8A. Read Mode AC Characteristics for M28010 (5V range) (TA = –40 to 85 °C; VCC = 4.5 to 5.5 V) Symbol Alt. Parameter Test Condi t ion M28010 –10 Min –12 Max Min Unit Max tAVQV tACC Address Valid to Output Valid E = VIL, G = VIL 100 120 ns tELQV tCE Chip Enable Low to Output Valid G = VIL 100 120 ns tGLQV tOE Output Enable Low to Output Valid E = VIL 40 45 ns tEHQZ1 tDF Chip Enable High to Output Hi-Z G = VIL 0 40 0 45 ns tGHQZ1 tDF Output Enable High to Output Hi-Z E = VIL 0 40 0 45 ns tAXQX tOH Address Transition to Output Transition E = VIL, G = VIL 0 Note: 1. Output Hi-Z is defined as the point at which data is no longer driven. 10/23 0 ns M28010 Table 8B. Read Mode AC Characteristics for M28010-W (3V range) (TA = –40 to 85 °C; VCC = 2.7 to 3.6 V) Symbol Alt. Parameter Test Condi t ion M28010-W –10 Min –12 Max Min –15 Max Min Unit Max tAVQV tACC Address Valid to Output Valid E = VIL, G = VIL 100 120 150 ns tELQV tCE Chip Enable Low to Output Valid G = VIL 100 120 150 ns tGLQV tOE Output Enable Low to Output Valid E = VIL 70 80 100 ns tEHQZ1 tDF Chip Enable High to Output Hi-Z G = VIL 0 50 0 60 0 70 ns tGHQZ1 tDF Output Enable High to Output Hi-Z E = VIL 0 50 0 60 0 70 ns tAXQX tOH Address Transition to Output Transition E = VIL, G = VIL 0 0 0 ns –25 Unit Note: 1. Output Hi-Z is defined as the point at which data is no longer driven. Table 8C. Read Mode AC Characteristics for M28010-R (2V range) (TA = –40 to 85 °C; VCC = 1.8 to 2.4 V) Symbol Alt. Parameter Test Condi t ion M28010-R –20 Min Max Min Max tAVQV tACC Address Valid to Output Valid E = VIL, G = VIL 200 250 ns tELQV tCE Chip Enable Low to Output Valid G = VIL 200 250 ns tGLQV tOE Output Enable Low to Output Valid E = VIL 80 90 ns tEHQZ1 tDF Chip Enable High to Output Hi-Z G = VIL 0 50 0 60 ns tGHQZ1 tDF Output Enable High to Output Hi-Z E = VIL 0 50 0 60 ns tAXQX tOH Address Transition to Output Transition E = VIL, G = VIL 0 0 ns Note: 1. Output Hi-Z is defined as the point at which data is no longer driven. 11/23 M28010 Figure 11. Read Mode AC Waveforms (with Write Enable, W, high) A0-A16 VALID tAVQV tAXQX E tGLQV tEHQZ G tELQV DQ0-DQ7 tGHQZ Hi-Z DATA OUT AI02229 Note: 1. Write Enable (W) = VIH Table 9A. Write Mode AC Characteristics for M28010 (5V range) (TA = –40 to 85 °C; VCC = 4.5 to 5.5 V) M28010 Symbol Alt. Parameter Test Condit ion Unit Min Max tAVWL tAS Address Valid to Write Enable Low E = VIL, G = VIH 0 ns tAVEL tAS Address Valid to Chip Enable Low G = VIH, W= VIL 0 ns tELWL tCES Chip Enable Low to Write Enable Low G = VIH 0 ns tGHWL tOES Output Enable High to Write Enable Low E = VIL 0 ns tGHEL tOES Output Enable High to Chip Enable Low W = VIL 0 ns tWLEL tWES Write Enable Low to Chip Enable Low G = VIH 0 ns tWLAX tAH Write Enable Low to Address Transition 70 ns tELAX tAH Chip Enable Low to Address Transition 70 ns tELEH tWP Chip Enable Low to Chip Enable High 100 ns tWHEH tCEH Write Enable High to Chip Enable High 0 ns tWHGL tOEH Write Enable High to Output Enable Low 0 ns tEHWH tWEH Chip Enable High to Write Enable High 0 ns tWHDX tDH Write Enable High to Input Transition 0 ns tEHDX tDH Chip Enable High to Input Transition 0 ns tWHWL tWPH Write Enable High to Write Enable Low 50 ns tWLWH tWP Write Enable Low to Write Enable High 100 ns tWLQ5H tBLC Time-out after the last byte write 150 µs tQ5HQ5X tWC tDVWH tDS Data Valid before Write Enable High 50 ns tDVEH tDS Data Valid before Chip Enable High 50 ns 12/23 Byte Write Cycle time 5 ms Page Write Cycle time (up to 128 bytes) 10 ms M28010 Table 9B. Write Mode AC Characteristics for M28010-W (3V range) (TA = –40 to 85 °C; VCC = 2.7 to 3.6 V) M28010-W Symbol Alt. Parameter Test Condit ion Unit Min Max tAVWL tAS Address Valid to Write Enable Low E = VIL, G = VIH 0 ns tAVEL tAS Address Valid to Chip Enable Low G = VIH, W= VIL 0 ns tELWL tCES Chip Enable Low to Write Enable Low G = VIH 0 ns tGHWL tOES Output Enable High to Write Enable Low E = VIL 0 ns tGHEL tOES Output Enable High to Chip Enable Low W = VIL 0 ns tWLEL tWES Write Enable Low to Chip Enable Low G = VIH 0 ns tWLAX tAH Write Enable Low to Address Transition 70 ns tELAX tAH Chip Enable Low to Address Transition 70 ns tELEH tWP Chip Enable Low to Chip Enable High 100 ns tWHEH tCEH Write Enable High to Chip Enable High 0 ns tWHGL tOEH Write Enable High to Output Enable Low 0 ns tEHWH tWEH Chip Enable High to Write Enable High 0 ns tWHDX tDH Write Enable High to Input Transition 0 ns tEHDX tDH Chip Enable High to Input Transition 0 ns tWHWL tWPH Write Enable High to Write Enable Low 50 ns tWLWH tWP Write Enable Low to Write Enable High 100 ns tWLQ5H tBLC Time-out after the last byte write 150 µs tQ5HQ5X tWC tDVWH tDS Data Valid before Write Enable High 80 ns tDVEH tDS Data Valid before Chip Enable High 80 ns Byte Write Cycle time 5 ms Page Write Cycle time (up to 128 bytes) 10 ms 13/23 M28010 Table 9C. Write Mode AC Characteristics for M28010-R (2V range) (TA = –40 to 85 °C; VCC = 1.8 to 2.4 V) M28010-R Symbol Alt. Parameter Test Condit ion Unit Min Max tAVWL tAS Address Valid to Write Enable Low E = VIL, G = VIH 0 ns tAVEL tAS Address Valid to Chip Enable Low G = VIH, W= VIL 0 ns tELWL tCES Chip Enable Low to Write Enable Low G = VIH 0 ns tGHWL tOES Output Enable High to Write Enable Low E = VIL 0 ns tGHEL tOES Output Enable High to Chip Enable Low W = VIL 0 ns tWLEL tWES Write Enable Low to Chip Enable Low G = VIH 0 ns tWLAX tAH Write Enable Low to Address Transition 120 ns tELAX tAH Chip Enable Low to Address Transition 120 ns tELEH tWP Chip Enable Low to Chip Enable High 120 ns tWHEH tCEH Write Enable High to Chip Enable High 0 ns tWHGL tOEH Write Enable High to Output Enable Low 0 ns tEHWH tWEH Chip Enable High to Write Enable High 0 ns tWHDX tDH Write Enable High to Input Transition 0 ns tEHDX tDH Chip Enable High to Input Transition 0 ns tWHWL tWPH Write Enable High to Write Enable Low 100 ns tWLWH tWP Write Enable Low to Write Enable High 120 ns tWLQ5H tBLC Time-out after the last byte write 150 µs tWHRH tWC tDVWH tDS Data Valid before Write Enable High 120 ns tDVEH tDS Data Valid before Chip Enable High 120 ns 14/23 Byte Write Cycle time 5 ms Page Write Cycle time (up to 128 bytes) 10 ms M28010 Figure 12. Write Mode AC Waveforms (Write Enable, W, controlled) A0-A16 VALID tAVWL tWLAX E tELWL tWHEH G tGHWL tWLWH tWHGL W tWHWL DATA IN DQ0-DQ7 tDVWH tWHDX AI02230 Figure 13. Write Mode AC Waveforms (Chip Enable, E, controlled) A0-A16 VALID tAVEL tELAX E tGHEL tELEH G tWLEL tEHGL W tEHWH DQ0-DQ7 DATA IN tDVEH tEHDX AI02231 15/23 M28010 Figure 14. Page Write Mode AC Waveforms (Write Enable, W, controlled) A0-A16 Addr 0 Addr 1 Addr 2 Addr n E G tWHWL W tWLWH Byte 0 DQ0-DQ7 (in) Byte 1 Byte 2 Byte n DQ5 (out) tWLQ5H tQ5HQ5X AI02829B Figure 15. Software Protected Write Cycle Waveforms A0-A6 Byte Add 0 5555h 2AAAh Byte Add n 5555h A7-A16 Page Add 1 E G tWHWL W tWLWH DQ0-DQ7 tDVWH AAh 55h tWHDX A0h Byte 0 Byte n AI02233B Note: 1. A16 to A7 must specify the same page address during each high-to-low transition of W (or E). G must be high only when W and E are both low. 16/23 M28010 Figure 16. Data Polling Sequence Waveforms A0-A16 Address of the last byte of the Page Write instruction E G tWHGL W DQ7 DQ7 DQ7 LAST BYTE LOADED DQ7 DQ7 INTERNAL WRITE SEQUENCE OR TIME BETWEEN TWO CONSECUTIVE BYTES LOADING DQ7 READY AFTER INTERNAL WRITE SEQUENCE AI02234 Figure 17. Toggle Bit Sequence Waveforms A0-A16 Address of the last byte of the Page Write instruction E G W DQ6 (1) LAST BYTE LOADED TOGGLE INTERNAL WRITE SEQUENCE OR TIME BETWEEN TWO CONSECUTIVE BYTES LOADING READY AFTER INTERNAL WRITE SEQUENCE AI02235 Note: 1. The Toggle Bit is first set to ‘0’. 17/23 M28010 Table 10. Ordering Information Scheme Example: M28010 –10 W KA 6 T Option T Tape & Reel Packing Speed -10 100 ns Temperature Range -12 120 ns 11 0 to 70 °C -15 150 ns 6 –40 to 85 °C -20 200 ns -25 250 ns Operating Voltage Package blank 4.5 V to 5.5 V BA PDIP32 W 2.7 V to 3.6 V KA PLCC32 R 1.8 V to 2.4 V NA TSOP32: 8 x 20mm Note: 1. This temperature range on request only. ORDERING INFORMATION Devices are shipped from the factory with the memory content set at all ‘1’s (FFh). The notation used for the device number is as shown in Table 10. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you. 18/23 M28010 Table 11. PDIP32 - 32 lead Plastic DIP, 600 mils width, Package Mechanical Data mm Symbol Min. Max. Min. Max. A – 5.08 – 0.200 A1 0.38 – 0.015 – A2 3.56 4.06 0.140 0.160 B 0.38 0.51 0.015 0.020 – – – – C 0.20 0.30 0.008 0.012 D 41.78 42.04 1.645 1.655 B1 Typ. inches 1.52 Typ. 0.060 D2 38.10 – – 1.500 – – E 15.24 – – 0.600 – – 13.59 13.84 0.535 0.545 E1 e1 2.54 – – 0.100 – – eA 15.24 – – 0.600 – – eB 15.24 17.78 0.600 0.700 L 3.18 3.43 0.125 0.135 S 1.78 2.03 0.070 0.080 α 0° 10° 0° 10° N 32 32 Figure 18. PDIP32 (BA) A2 A1 B1 B A L e1 α eA D2 C eB D S N E1 E 1 PDIP Note: 1. Drawing is not to scale. 19/23 M28010 Table 12. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular mm Symbol Typ. inches Min. Max. A 2.54 A1 Typ. Min. Max. 3.56 0.100 0.140 1.52 2.41 0.060 0.095 A2 – 0.38 – 0.015 B 0.33 0.53 0.013 0.021 B1 0.66 0.81 0.026 0.032 D 12.32 12.57 0.485 0.495 D1 11.35 11.56 0.447 0.455 D2 9.91 10.92 0.390 0.430 E 14.86 15.11 0.585 0.595 E1 13.89 14.10 0.547 0.555 E2 12.45 13.46 0.490 0.530 – – – – 0.00 0.25 0.000 0.010 – – – – e 1.27 F R 0.89 0.050 0.035 N 32 32 Nd 7 7 Ne 9 9 CP 0.10 0.004 Figure 19. PLCC32 (KA) D D1 A1 A2 1 N B1 E1 E Ne e D2/E2 F B 0.51 (.020) 1.14 (.045) A Nd R PLCC Note: 1. Drawing is not to scale. 20/23 CP M28010 Table 13. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20mm, Package Mechanical Data mm inches Symbol Typ. Min. Max. A Typ. Min. 1.20 Max. 0.047 A1 0.05 0.17 0.002 0.006 A2 0.95 1.05 0.037 0.041 B 0.15 0.27 0.006 0.011 C 0.10 0.21 0.004 0.008 D 19.80 20.20 0.780 0.795 D1 18.30 18.50 0.720 0.728 E 7.90 8.10 0.311 0.319 – – – – L 0.50 0.70 0.020 0.028 α 0° 5° 0° 5° N 32 e 0.50 0.020 32 CP 0.10 0.004 Figure 20. TSOP32 (NS) A2 1 N e E B N/2 D1 A CP D DIE C TSOP-a A1 α L Note: 1. Drawing is not to scale. 21/23 M28010 Table 14. Revision History Date Description of Revision 15-Feb-2000 ICC1(max), in Read Mode DC Char table for 5V, changed from 30 µA to 50 µA. 28-Feb-2000 tDVWH(min) and tDVEH(min), in Write Mode AC Char table for 3V, changed from 50 ns to 80 ns 22/23 M28010 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express writt en approval of STMicroelectronics. 2000 STMicroelectronics - All Rights Reserved The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http:// www.st.com 23/23