STMICROELECTRONICS M58BW016DB

M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
16 Mbit (512 Kb x 32, boot block, burst)
3 V supply Flash memories
Features
■
Supply voltage
– VDD = 2.7 V to 3.6 V for Program, Erase
and Read
– VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O
buffers
– VPP = 12 V for Fast Program (optional)
■
High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state Burst
Read
– Synchronous Burst Read
– Asynchronous Page Read
PQFP80 (T)
■
Hardware block protection
– WP pin for Write Protect of the 4 outermost
parameter blocks and all main blocks
– RP pin for Write Protect of all blocks
■
Optimized for FDI drivers
– Fast Program / Erase Suspend latency
time < 6 µs
– Common Flash interface
■
Memory blocks
– 8 parameters blocks (top or bottom)
– 31 main blocks
■
Low power consumption
– 5 µA typical Deep Power-down
– 60 µA typical standby for M58BW016DT/B
150 µA typical standby for M58BW016FT/B
– Automatic standby after Asynchronous
Read
■
Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
■
ECOPACK® packages available
October 2007
BGA
LBGA80 10 × 12 mm
Rev 14
1/69
www.st.com
1
Contents
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.1
2
3
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.1
Address inputs (A0-A18) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.2
Data inputs/outputs (DQ0-DQ31) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.3
Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.4
Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.5
Output Disable (GD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.6
Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.7
Reset/Power-down (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.8
Latch Enable (L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.9
Burst Clock (K) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.10
Burst Address Advance (B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.11
Valid Data Ready (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.12
Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.13
Supply voltage (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.14
Output supply voltage (VDDQ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.15
Input supply voltage (VDDQIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.16
Program/Erase supply voltage (VPP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.17
Ground (VSS and VSSQ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.18
Don’t use (DU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.19
Not connected (NC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1
2/69
Block protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Asynchronous Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1.1
Asynchronous Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1.2
Asynchronous Latch Controlled Bus Read . . . . . . . . . . . . . . . . . . . . . . 18
3.1.3
Asynchronous Page Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.1.4
Asynchronous Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.1.5
Asynchronous Latch Controlled Bus Write . . . . . . . . . . . . . . . . . . . . . . 19
3.1.6
Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
3.2
3.3
4
5
Contents
3.1.7
Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.1.8
Automatic Low Power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.1.9
Power-down mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.1.10
Electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Synchronous Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.2.1
Synchronous Burst Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.2.2
Synchronous Burst Read Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Burst Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.3.1
Read Select bit (M15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.3.2
X-Latency bits (M14-M11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.3.3
Y-Latency bit (M9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.3.4
Valid Data Ready bit (M8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.3.5
Burst Type bit (M7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.3.6
Valid Clock Edge bit (M6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.3.7
Wrap Burst bit (M3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.3.8
Burst Length bit (M2-M0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4.1
Read Memory Array command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4.2
Read Electronic Signature command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4.3
Read Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4.4
Read Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
4.5
Clear Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
4.6
Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
4.7
Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
4.8
Program/Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
4.9
Program/Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
4.10
Set Burst Configuration Register command . . . . . . . . . . . . . . . . . . . . . . . 32
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5.1
Program/Erase Controller Status (bit 7) . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5.2
Erase Suspend Status (bit 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5.3
Erase Status (bit 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
5.4
Program Status (bit 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
5.5
VPP Status (bit 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3/69
Contents
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
5.6
Program Suspend Status (bit 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
5.7
Block Protection Status (bit 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
6
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
7
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
8
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
9
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Appendix A Common Flash interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Appendix B Flowcharts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
4/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
M58BW016DT and M58BW016FT top boot block addresses . . . . . . . . . . . . . . . . . . . . . . 12
M58BW016DB and M58BW016FB bottom boot block addresses . . . . . . . . . . . . . . . . . . . 13
Asynchronous Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Asynchronous Read Electronic Signature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Synchronous Burst Read Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Burst Configuration Register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Burst type definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Program, erase times and program, erase endurance cycles . . . . . . . . . . . . . . . . . . . . . . 33
Status Register bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Asynchronous Bus Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Asynchronous Latch Controlled Bus Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . 42
Asynchronous Page Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Asynchronous Write and Latch Controlled Write AC characteristics . . . . . . . . . . . . . . . . . 46
Synchronous Burst Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Reset, Power-down and Power-up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
PQFP80 - 80 lead plastic quad flat pack, package mechanical data . . . . . . . . . . . . . . . . . 52
LBGA80 10 × 12 mm - 8 × 10 active ball array, 1 mm pitch, package mechanical data . . 53
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
CFI - query address and data output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
CFI - device voltage and timing specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Device geometry definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Extended query information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
5/69
List of figures
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
6/69
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
PQFP connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
LBGA connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Example Burst Configuration X-1-1-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Example Burst Configuration X-2-2-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
AC measurement input/output waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Asynchronous Bus Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Asynchronous Latch Controlled Bus Read AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . 42
Asynchronous Page Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Asynchronous Write AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Asynchronous Latch Controlled Write AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Synchronous Burst Read (data valid from ‘n’ clock rising edge). . . . . . . . . . . . . . . . . . . . . 47
Synchronous Burst Read (data valid from ‘n’ clock rising edge). . . . . . . . . . . . . . . . . . . . . 48
Synchronous Burst Read - continuous - valid data ready output . . . . . . . . . . . . . . . . . . . . 49
Synchronous Burst Read - Burst Address Advance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Reset, Power-down and Power-up AC waveforms - control pins low. . . . . . . . . . . . . . . . . 50
Reset, Power-down and Power-up AC waveforms - control pins toggling . . . . . . . . . . . . . 50
PQFP80 - 80 lead plastic quad flat pack, package outline . . . . . . . . . . . . . . . . . . . . . . . . . 52
LBGA80 10 × 12 mm - 8 × 10 active ball array, 1 mm pitch, package outline . . . . . . . . . . 53
Program flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Program Suspend & Resume flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . 59
Block Erase flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Erase Suspend & Resume flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Power-up sequence followed by Synchronous Burst Read . . . . . . . . . . . . . . . . . . . . . . . . 62
Command interface and Program/Erase controller flowchart (a) . . . . . . . . . . . . . . . . . . . . 63
Command interface and Program/Erase controller flowchart (b) . . . . . . . . . . . . . . . . . . . . 64
Command interface and Program/Erase controller flowchart (c) . . . . . . . . . . . . . . . . . . . . 65
Command interface and Program/Erase controller flowchart (d) . . . . . . . . . . . . . . . . . . . . 66
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
1
Description
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed
in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a
VDDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply
can be used to provide fast program and erase for a limited time and number of
program/erase cycles.
The devices support Asynchronous (Latch Controlled and Page Read) and Synchronous
Bus operations. The Synchronous Burst Read interface allows a high data transfer rate
controlled by the Burst Clock, K, signal. It is capable of bursting fixed or unlimited lengths of
data. The burst type, latency and length can be configured and can be easily adapted to a
large variety of system clock frequencies and microprocessors. All writes are asynchronous.
On power-up the memory defaults to Read mode with an Asynchronous Bus.
The devices have a boot block architecture with an array of 8 parameter blocks of 64 Kb
each and 31 main blocks of 512 Kb each. In the M58BW016DT and M58BW016FT the
parameter blocks are located at the top of the address space whereas in the M58BW016DB
and M58BW016FB, they are located at the bottom.
Program and Erase commands are written to the command interface of the memory. An onchip Program/Erase controller simplifies the process of programming or erasing the memory
by taking care of all of the special operations that are required to update the memory
contents. The end of a program or erase operation can be detected and any error conditions
identified in the Status Register. The command set required to control the memory is
consistent with JEDEC standards.
Erase can be suspended in order to perform either Read or Program in any other block and
then resumed. Program can be suspended to Read data in any other block and then
resumed. Each block can be programmed and erased over 100,000 cycles.
All blocks are protected during power-up.
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB feature two different
levels of block protection to avoid unwanted program/erase operations:
●
The WP pin offers an hardware protection on two of the parameter blocks and all of the
main blocks
●
All program or erase operations are blocked when Reset, RP, is held Low. A
Reset/Power-down mode is entered when the RP input is Low. In this mode the power
consumption is lower than in the normal standby mode, the device is write protected
and both the Status and the Burst Configuration Registers are cleared. A recovery time
is required when the RP input goes High.
The memory is offered in a PQFP80 (14 x 20 mm) and LBGA80 (10 × 12 mm) package.
In order to meet environmental requirements, ST offers the devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
The memories are supplied with all the bits erased (set to ’1’).
7/69
Description
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
In the present document, M58BW016DT, M58BW016DB, M58BW016FT and
M58BW016FB will be referred to as M58BW016 unless otherwise specified.
Figure 1.
Logic diagram
VDD VDDQ VDDQIN VPP
DQ0-DQ31
A0-A18
K
L
E
RP
G
M58BW016DT
M58BW016DB
M58BW016FT
M58BW016FB
R
GD
W
WP
B
VSS
8/69
VSSQ
AI11201b
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 1.
Description
Signal names
Signal
Description
Direction
A0-A18
Address inputs
Inputs
DQ0-DQ7
Data input/output, command input
I/O
DQ8-DQ15
Data input/output, Burst Configuration Register
I/O
DQ16-DQ31
Data input/output
I/O
B
Burst Address Advance
Input
E
Chip Enable
Input
G
Output Enable
Input
K
Burst Clock
Input
L
Latch Enable
Input
R
Valid Data Ready (open drain output)
Output
RP
Reset/Power-down
Input
W
Write Enable
Input
GD
Output Disable
Input
WP
Write Protect
Input
VDD
Supply voltage
VDDQ
Power supply for output buffers
VDDQIN
Power supply for input buffers only
VPP
Optional supply voltage for fast program and fast
erase operations
VSS
Ground
VSSQ
Input/output ground
NC
Not connected internally
DU
Don’t use as internally connected
9/69
Description
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
PQFP connections (top view through package)
1
64
53
40
41
VSS
VPP
VDD
A9
A10
A11
A12
A13
A14
A15
25
24
32
M58BW016DT
M58BW016DB
M58BW016FT
M58BW016FB
12
A3
A4
A5
A6
A7
A8
DQ16
DQ17
DQ18
DQ19
VDDQ
VSSQ
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
VDDQ
VSSQ
DQ28
DQ29
DQ30
DQ31
DU
A0
A1
A2
65
80
73
DU
R
GD
WP
W
G
E
VDD
B
VSS
L
NC
NC
K
RP
VDDQIN
Figure 2.
AI11202b
10/69
DQ15
DQ14
DQ13
DQ12
VSSQ
VDDQ
DQ11
DQ10
DQ9
DQ8
DQ7
DQ6
DQ5
DQ4
VSSQ
VDDQ
DQ3
DQ2
DQ1
DQ0
NC
A18
A17
A16
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 3.
Description
LBGA connections (top view through package)
1
2
3
4
5
6
7
8
A
A15
A14
VDD
VPP
VSS
A6
A3
A2
B
A16
A13
A12
A9
A8
A5
A4
A1
C
A17
A18
A11
A10
NC
A7
NC
A0
D
DQ3
DQ0
NC
NC
NC
DQ31
DQ30
DQ29
E
VDDQ
DQ4
DQ2
DQ1
DQ27
DQ28
DQ26
VDDQ
F
VSSQ
DQ7
DQ6
DQ5
NC
DQ25
DQ24
VSSQ
G
VDDQ
DQ8
DQ10
DQ9
DQ22
DQ21
DQ23
VDDQ
H
DQ13
DQ12
DQ11
WP
DQ17
DQ19
DQ18
DQ20
I
DQ15
DQ14
L
B
E
G
R
DQ16
J
VDDQIN
RP
K
VSS
VDD
W
GD
NC
AI04151C
1.1
Block protection
The M58BW016 feature two different levels of block protection.
●
Write Protect pin, WP, - When WP is Low, VIL, all the lockable parameter blocks (two
upper (top) or lower (bottom)) and all the main blocks are protected. When WP is High
(VIH) all the lockable parameter blocks and all the main blocks are unprotected
●
Reset/Power-down pin, RP, - If the device is held in Reset mode (RP at VIL), no
program or erase operations can be performed on any block.
After a device reset the first two kinds of block protection (WP, RP) can be combined to give
a flexible block protection.
11/69
Description
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 2.
12/69
M58BW016DT and M58BW016FT top boot block addresses
#
Size (Kbit)
Address range
38
64
7F800h-7FFFFh
37
64
7F000h-7F7FFh
36
64
7E800h-7EFFFh
35
64
7E000h-7E7FFh
34
64
7D800h-7DFFFh
33
64
7D000h-7D7FFh
32
64
7C800h-7CFFFh
31
64
7C000h-7C7FFh
30
512
78000h-7BFFFh
29
512
74000h-77FFFh
28
512
70000h-73FFFh
27
512
6C000h-6FFFFh
26
512
68000h-6BFFFh
25
512
64000h-67FFFh
24
512
60000h-63FFFh
23
512
5C000h-5FFFFh
22
512
58000h-5BFFFh
21
512
54000h-57FFFh
20
512
50000h-53FFFh
19
512
4C000h-4FFFFh
18
512
48000h-4BFFFh
17
512
44000h-47FFFh
16
512
40000h-43FFFh
15
512
3C000h-3FFFFh
14
512
38000h-3BFFFh
13
512
34000h-37FFFh
12
512
30000h-33FFFh
11
512
2C000h-2FFFFh
10
512
28000h-2BFFFh
9
512
24000h-27FFFh
8
512
20000h-23FFFh
7
512
1C000h-1FFFFh
6
512
18000h-1BFFFh
5
512
14000h-17FFFh
4
512
10000h-13FFFh
3
512
0C000h-0FFFFh
2
512
08000h-0BFFFh
1
512
04000h-07FFFh
0
512
00000h-03FFFh
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 3.
Description
M58BW016DB and M58BW016FB bottom boot block addresses
#
Size (Kbit)
Address range
38
512
7C000h-7FFFFh
37
512
78000h-7BFFFh
36
512
74000h-77FFFh
35
512
70000h-73FFFh
34
512
6C000h-6FFFFh
33
512
68000h-6BFFFh
32
512
64000h-67FFFh
31
512
60000h-63FFFh
30
512
5C000h-5FFFFh
29
512
58000h-5BFFFh
28
512
54000h-57FFFh
27
512
50000h-53FFFh
26
512
4C000h-4FFFFh
25
512
48000h-4BFFFh
24
512
44000h-47FFFh
23
512
40000h-43FFFh
22
512
3C000h-3FFFFh
21
512
38000h-3BFFFh
20
512
34000h-37FFFh
19
512
30000h-33FFFh
18
512
2C000h-2FFFFh
17
512
28000h-2BFFFh
16
512
24000h-27FFFh
15
512
20000h-23FFFh
14
512
1C000h-1FFFFh
13
512
18000h-1BFFFh
12
512
14000h-17FFFh
11
512
10000h-13FFFh
10
512
0C000h-0FFFFh
9
512
08000h-0BFFFh
8
512
04000h-07FFFh
7
64
03800h-03FFFh
6
64
03000h-037FFh
5
64
02800h-02FFFh
4
64
02000h-027FFh
3
64
01800h-01FFFh
2
64
01000h-017FFh
1
64
00800h-00FFFh
0
64
00000h-007FFh
13/69
Signal descriptions
2
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Signal descriptions
See Figure 1: Logic diagram, and Table 1: Signal names for a brief overview of the signals
connected to this device.
2.1
Address inputs (A0-A18)
The address inputs are used to select the cells to access in the memory array during Bus
operations either to read or to program data. During Bus Write operations they control the
commands sent to the command interface of the Program/Erase controller. Chip Enable
must be Low when selecting the addresses.
The address inputs are latched on the rising edge of Latch Enable L or Burst Clock K,
whichever occurs first, in a read operation.The address inputs are latched on the rising edge
of Chip Enable, Write Enable or Latch Enable, whichever occurs first in a write operation.
The address latch is transparent when Latch Enable is Low, VIL. The address is internally
latched in an erase or program operation.
2.2
Data inputs/outputs (DQ0-DQ31)
The Data inputs/outputs output the data stored at the selected address during a Bus Read
operation, or are used to input the data during a program operation. During Bus Write
operations they represent the commands sent to the command interface of the
Program/Erase controller. When used to input data or write commands they are latched on
the rising edge of Write Enable or Chip Enable, whichever occurs first.
When Chip Enable and Output Enable are both Low, VIL, and Output Disable is at VIH, the
data bus outputs data from the memory array, the electronic signature, the CFI information
or the contents of the Status Register. The data bus is high impedance when the device is
deselected with Chip Enable at VIH, Output Enable at VIH, Output Disable at VIL or
Reset/Power-down at VIL. The Status Register content is output on DQ0-DQ7 and DQ8DQ31 are at VIL.
2.3
Chip Enable (E)
The Chip Enable, E, input activates the memory control logic, input buffers, decoders and
sense amplifiers. Chip Enable, E, at VIH deselects the memory and reduces the power
consumption to the standby level.
2.4
Output Enable (G)
The Output Enable, G, gates the outputs through the data output buffers during a read
operation, when Output Disable GD is at VIH. When Output Enable G is at VIH, the outputs
are high impedance independently of Output Disable.
14/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
2.5
Signal descriptions
Output Disable (GD)
The Output Disable, GD, deactivates the data output buffers. When Output Disable, GD, is at
VIH, the outputs are driven by the Output Enable. When Output Disable, GD, is at VIL, the
outputs are high impedance independently of Output Enable. The Output Disable pin must
be connected to an external pull-up resistor as there is no internal pull-up resistor to drive
the pin.
2.6
Write Enable (W)
The Write Enable, W, input controls writing to the command interface, Address inputs and
Data latches. Both addresses and data can be latched on the rising edge of Write Enable
(also see Latch Enable, L).
2.7
Reset/Power-down (RP)
The Reset/Power-down, RP, is used to apply a hardware reset to the memory. A hardware
reset is achieved by holding Reset/Power-down Low, VIL, for at least tPLPH. Writing is
inhibited to protect data, the command interface and the Program/Erase controller are reset.
The Status Register information is cleared and power consumption is reduced to deep
power-down level. The device acts as deselected, that is the data outputs are high
impedance.
After Reset/Power-down goes High, VIH, the memory will be ready for Bus Read operations
after a delay of tPHEL or Bus Write operations after tPHWL.
If Reset/Power-down goes Low, VIL, during a Block Erase, or a Program the operation is
aborted, in a time of tPLRH maximum, and data is altered and may be corrupted.
During Power-up power should be applied simultaneously to VDD and VDDQ(IN) with RP held
at VIL. When the supplies are stable RP is taken to VIH. Output Enable, G, Chip Enable, E,
and Write Enable, W, should be held at VIH during power-up.
In an application, it is recommended to associate Reset/Power-down pin, RP, with the reset
signal of the microprocessor. Otherwise, if a reset operation occurs while the memory is
performing an erase or program operation, the memory may output the Status Register
information instead of being initialized to the default Asynchronous Random Read.
See Table 21: Reset, Power-down and Power-up AC characteristics and Figure 17: Reset,
Power-down and Power-up AC waveforms - control pins low, for more details.
2.8
Latch Enable (L)
The Bus interface can be configured to latch the Address Inputs on the rising edge of Latch
Enable, L, for Asynchronous Latch Enable Controlled Read or Write or Synchronous Burst
Read operations. In Synchronous Burst Read operations the address is latched on the
active edge of the Clock when Latch Enable is Low, VIL. Once latched, the addresses may
change without affecting the address used by the memory. When Latch Enable is Low, VIL,
the latch is transparent. Latch Enable, L, can remain at VIL for Asynchronous Random Read
and Write operations.
15/69
Signal descriptions
2.9
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Burst Clock (K)
The Burst Clock, K, is used to synchronize the memory with the external bus during
Synchronous Burst Read operations. Bus signals are latched on the active edge of the
Clock. The Clock can be configured to have an active rising or falling edge. In Synchronous
Burst Read mode the address is latched on the first active clock edge when Latch Enable is
Low, VIL, or on the rising edge of Latch Enable, whichever occurs first.
During Asynchronous Bus operations the Clock is not used.
2.10
Burst Address Advance (B)
The Burst Address Advance, B, controls the advancing of the address by the internal
address counter during Synchronous Burst Read operations.
Burst Address Advance, B, is only sampled on the active clock edge of the Clock when the
X-latency time has expired. If Burst Address Advance is Low, VIL, the internal address
counter advances. If Burst Address Advance is High, VIH, the internal address counter does
not change; the same data remains on the Data inputs/outputs and Burst Address Advance
is not sampled until the Y-latency expires.
The Burst Address Advance, B, may be tied to VIL.
2.11
Valid Data Ready (R)
The Valid Data Ready output, R, is an open drain output that can be used, during
Synchronous Burst Read operations, to identify if the memory is ready to output data or not.
The Valid Data Ready output can be configured to be active on the clock edge of the invalid
data read cycle or one cycle before. Valid Data Ready, at VIH, indicates that new data is or
will be available. When Valid Data Ready is Low, VIL, the previous data outputs remain
active.
In all asynchronous operations, Valid Data Ready is high-impedance. It may be tied to other
components with the same Valid Data Ready signal to create a unique system Ready
signal. The Valid Data Ready output has an internal pull-up resistor of around 1 MΩ
powered from VDDQ, designers should use an external pull-up resistor of the correct value to
meet the external timing requirements for Valid Data Ready going to VIH.
2.12
Write Protect (WP)
The Write Protect, WP, provides protection against program or erase operations. When
Write Protect, WP, is at VIL the first two (in the bottom configuration) or last two (in the top
configuration) parameter blocks and all main blocks are locked. When Write Protect WP is at
VIH all the blocks can be programmed or erased, if no other protection is used.
2.13
Supply voltage (VDD)
The supply voltage, VDD, is the core power supply. All internal circuits draw their current from
the VDD pin, including the Program/Erase controller.
16/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
2.14
Signal descriptions
Output supply voltage (VDDQ)
The output supply voltage, VDDQ, is the output buffer power supply for all operations (Read,
Program and Erase) used for DQ0-DQ31 when used as outputs.
2.15
Input supply voltage (VDDQIN)
The input supply voltage, VDDIN, is the power supply for all input signal. Input signals are: K, B,
L, W, GD, G, E, A0-A18 and DQ0-DQ31, when used as inputs.
2.16
Program/Erase supply voltage (VPP)
The Program/Erase supply voltage, VPP, is used for program and erase operations. The
memory normally executes program and erase operations at VPP1 voltage levels. In a
manufacturing environment, programming may be speeded up by applying a higher voltage
level, VPPH, to the VPP pin.
The voltage level VPPH may be applied for a total of 80 hours over a maximum of 1000
cycles. Stressing the device beyond these limits could damage the device.
2.17
Ground (VSS and VSSQ)
The ground VSS is the reference for the internal supply voltage VDD. The ground VSSQ is the
reference for the output and input supplies VDDQ, and VDDQIN. It is essential to connect VSS
and VSSQ together.
Note:
A 0.1 µF capacitor should be connected between the supply voltages, VDD, VDDQ and VDDIN
and the grounds, VSS and VSSQ to decouple the current surges from the power supply. The
PCB track widths must be sufficient to carry the currents required during all operations of
the parts, see Table 15: DC characteristics, for maximum current supply requirements.
2.18
Don’t use (DU)
This pin should not be used as it is internally connected. Its voltage level can be between
VSS and VDDQ or leave it unconnected.
2.19
Not connected (NC)
This pin is not physically connected to the device.
17/69
Bus operations
3
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Bus operations
Each bus operation that controls the memory is described in this section, see Table 4,
Table 5 and Table 6 Bus operations, for a summary. The bus operation is selected through
the Burst Configuration Register; the bits in this register are described at the end of this
section.
On power-up or after a hardware reset the memory defaults to Asynchronous Bus Read and
Asynchronous Bus Write, no other bus operation can be performed until the Burst Control
Register has been configured.
The electronic signature, CFI or Status Register will be read in asynchronous mode
regardless of the Burst Control Register settings.
Typically glitches of less than 5 ns on Chip Enable or Write Enable are ignored by the
memory and do not affect bus operations.
3.1
Asynchronous Bus operations
For asynchronous bus operations refer to Table 4 together with the following text.
3.1.1
Asynchronous Bus Read
Asynchronous Bus Read operations read from the memory cells, or specific registers
(electronic signature, Status Register, CFI and Burst Configuration Register) in the
command interface. A valid bus operation involves setting the desired address on the
address inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping
Write Enable and Output Disable High, VIH. The Data inputs/outputs will output the value,
see Figure 8: Asynchronous Bus Read AC waveforms, and Table 16: Asynchronous Bus
Read AC characteristics, for details of when the output becomes valid.
Asynchronous Read is the default read mode which the device enters on power-up or on
return from Reset/Power-down.
3.1.2
Asynchronous Latch Controlled Bus Read
Asynchronous Latch Controlled Bus Read operations read from the memory cells or specific
registers in the command interface. The address is latched in the memory before the value
is output on the data bus, allowing the address to change during the cycle without affecting
the address that the memory uses.
A valid bus operation involves setting the desired address on the address inputs, setting
Chip Enable and Latch Enable Low, VIL and keeping Write Enable High, VIH; the address is
latched on the rising edge of Latch Enable. Once latched, the address inputs can change.
Set Output Enable Low, VIL, to read the data on the Data inputs/outputs; see Figure 9:
Asynchronous Latch Controlled Bus Read AC waveforms, and Table 17: Asynchronous
Latch Controlled Bus Read AC characteristics, for details on when the output becomes
valid.
Note that, since the Latch Enable input is transparent when set Low, VIL, Asynchronous Bus
Read operations can be performed when the memory is configured for Asynchronous Latch
Enable bus operations by holding Latch Enable Low, VIL throughout the bus operation.
18/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
3.1.3
Bus operations
Asynchronous Page Read
Asynchronous Page Read operations are used to read from several addresses within the
same memory page. Each memory page is 4 double-words and is addressed by the
address inputs A0 and A1.
Data is read internally and stored in the page buffer. Valid bus operations are the same as
Asynchronous Bus Read operations but with different timings. The first read operation within
the page has identical timings, subsequent reads within the same page have much shorter
access times. If the page changes then the normal, longer timings apply again. Page Read
does not support Latched Controlled Read.
See Figure 10: Asynchronous Page Read AC waveforms, and Table 18: Asynchronous
Page Read AC characteristics, for details on when the outputs become valid.
3.1.4
Asynchronous Bus Write
Asynchronous Bus Write operations write to the command interface to send commands to
the memory or to latch addresses and input data to program. Bus Write operations are
asynchronous, the clock, K, is Don’t care during Bus Write operations.
A valid Asynchronous Bus Write operation begins by setting the desired address on the
address inputs, and setting Chip Enable, Write Enable and Latch Enable Low, VIL, and
Output Enable High, VIH, or Output Disable Low, VIL. The address inputs are latched by the
command interface on the rising edge of Chip Enable or Write Enable, whichever occurs
first. Commands and input data are latched on the rising edge of Chip Enable, E, or Write
Enable, W, whichever occurs first. Output Enable must remain High, and Output Disable
Low, during the whole Asynchronous Bus Write operation.
See Figure 11: Asynchronous Write AC waveforms, and Table 19: Asynchronous Write and
Latch Controlled Write AC characteristics, for details of the timing requirements.
3.1.5
Asynchronous Latch Controlled Bus Write
Asynchronous Latch Controlled Bus Write operations write to the command interface to
send commands to the memory or to latch addresses and input data to program. Bus Write
operations are asynchronous, the clock, K, is Don’t care during Bus Write operations.
A valid Asynchronous Latch Controlled Bus Write operation begins by setting the desired
address on the address inputs and pulsing Latch Enable Low, VIL. The address inputs are
latched by the command interface on the rising edge of Latch Enable, Write Enable or Chip
Enable, whichever occurs first. Commands and input data are latched on the rising edge of
Chip Enable, E, or Write Enable, W, whichever occurs first. Output Enable must remain
High, and Output Disable Low, during the whole Asynchronous Bus Write operation.
See Figure 12: Asynchronous Latch Controlled Write AC waveforms, and Table 19:
Asynchronous Write and Latch Controlled Write AC characteristics, for details of the timing
requirements.
3.1.6
Output Disable
The data outputs are high impedance when the Output Enable, G, is at VIH or Output
Disable, GD, is at VIL.
19/69
Bus operations
3.1.7
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Standby mode
When Chip Enable is High, VIH, and the Program/Erase controller is idle, the memory enters
Standby mode, the power consumption is reduced to the standby level and the Data
inputs/outputs pins are placed in the high impedance state regardless of Output Enable,
Write Enable or Output Disable inputs.
3.1.8
Automatic Low Power mode
If there is no change in the state of the bus for a short period of time during Asynchronous
Bus Read operations the memory enters Auto Low Power mode where the internal Supply
current is reduced to the Auto-Standby Supply current. The Data inputs/outputs will still
output data if a Bus Read operation is in progress.
Automatic Low Power is only available in Asynchronous Read modes.
3.1.9
Power-down mode
The memory is in Power-down when Reset/Power-down, RP, is at VIL. The power
consumption is reduced to the power-down level and the outputs are high impedance,
independent of the Chip Enable, E, Output Enable, G, Output Disable, GD, or Write Enable,
W, inputs.
3.1.10
Electronic signature
Two codes identifying the manufacturer and the device can be read from the memory
allowing programming equipment or applications to automatically match their interface to
the characteristics of the memory. The electronic signature is output by giving the Read
Electronic Signature command. The manufacturer code is output when all the address
inputs are at VIL. The device code is output when A1 is at VIH and all the other address pins
are at VIL (see Table 5: Asynchronous Read Electronic Signature operation). Issue a Read
Memory Array command to return to Read mode.
Table 4.
Asynchronous Bus operations(1)
Bus Operation
Step
E
G
GD
W
RP
L
VIL
VIL
VIH
VIH
VIH
VIL
Address Data output
Address Latch VIL
VIH
VIH
VIL
VIH
VIL
Address
High-Z
Read
VIL
VIL
VIH
VIH
VIH
VIH
X
Data output
Asynchronous Page
Read
VIL
VIL
VIH
VIH
VIH
X
Asynchronous Bus Write
VIL
VIH
X
VIL
VIH
VIL
Address
Data input
Address Latch VIL
VIL
VIH
VIH
VIH
VIL
Address
High-Z
Write
VIL
VIH
X
VIL
VIH
VIH
X
Data input
Output Disable, G
VIL
VIH
VIH
VIH
VIH
X
X
High-Z
Output Disable, GD
VIL
VIL
VIL
VIH
VIH
X
X
High-Z
Standby
VIH
X
X
X
VIH
X
X
High-Z
X
X
X
X
VIL
X
X
High-Z
Asynchronous Bus Read
Asynchronous Latch
Controlled Bus Read
Asynchronous Latch
Controlled Bus Write
Reset/Power-down
1. X = Don’t care.
20/69
A0-A18
DQ0-DQ31
Address Data output
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 5.
Bus operations
Asynchronous Read Electronic Signature operation
Code
Device
E
G
GD
W
A18-A0
DQ31-DQ0
Manufacturer
All
VIL
VIL
VIH
VIH
00000h
00000020h
M58BW016DT
M58BW016FT
VIL
VIL
VIH
VIH
00001h
00008836h
M58BW016DB
M58BW016FB
VIL
VIL
VIH
VIH
00001h
00008835h
VIL
VIL
VIH
VIH
00005h
BCR(1)
Device
Burst Configuration
Register
1. BCR = Burst Configuration Register.
3.2
Synchronous Bus operations
For Synchronous Bus Operations refer to Table 6 together with the following text.
3.2.1
Synchronous Burst Read
Synchronous Burst Read operations are used to read from the memory at specific times
synchronized to an external reference clock.
In the M58BW016FT and M58BW016FB only, once the memory is configured in Burst
mode, it is mandatory to have an active clock signal since the switching of the output buffer
data bus is synchronized to the active edge of the clock. In the absence of clock, no data is
output.
Caution:
The M58BW016DT and M58BW016DB are not concerned by the paragraph above.
The burst type, length and latency can be configured. The different configurations for
Synchronous Burst Read operations are described in Section 3.3: Burst Configuration
Register. Refer to Figure 4 and Figure 5 for examples of synchronous burst operations.
In Continuous Burst Read, one Burst Read operation can access the entire memory
sequentially by keeping the Burst Address Advance B at VIL for the appropriate number of
clock cycles. At the end of the memory address space the Burst Read restarts from the
beginning at address 000000h.
A valid Synchronous Burst Read operation begins when the Burst Clock is active and Chip
Enable and Latch Enable are Low, VIL. The Burst Start Address is latched and loaded into
the internal Burst Address Counter on the valid Burst Clock K edge (rising or falling
depending on the value of M6) or on the rising edge of Latch Enable, whichever occurs first.
After an initial memory latency time, the memory outputs data each clock cycle (or two clock
cycles depending on the value of M9). The Burst Address Advance B input controls the
memory burst output. The second burst output is on the next clock valid edge after the Burst
Address Advance B has been pulled Low.
Valid Data Ready, R, monitors if the memory burst boundary is exceeded and the Burst
controller of the microprocessor needs to insert wait states. When Valid Data Ready is Low
on the active clock edge, no new data is available and the memory does not increment the
internal address counter at the active clock edge even if Burst Address Advance, B, is Low.
21/69
Bus operations
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Valid Data Ready may be configured (by bit M8 of Burst Configuration Register) to be valid
immediately at the valid clock edge or one data cycle before the valid clock edge.
Synchronous Burst Read will be suspended if Burst Address Advance, B, goes High, VIH.
If Output Enable is at VIL and Output Disable is at VIH, the last data is still valid.
If Output Enable, G, is at VIH or Output Disable, GD, is at VIL, but the Burst Address
Advance, B, is at VIL the internal Burst Address counter is incremented at each Burst Clock
K valid edge.
The Synchronous Burst Read timing diagrams and AC characteristics are described in the
AC and DC parameters section. See Figure 13, Figure 14, Figure 15 and Figure 16, and
Table 20.
3.2.2
Synchronous Burst Read Suspend
During a Synchronous Burst Read operation it is possible to suspend the operation, freeing
the data bus for other higher priority devices.
A valid Synchronous Burst Read operation is suspended when both Output Enable and
Burst Address Advance are High, VIH. The Burst Address Advance going High, VIH, stops
the Burst counter and the Output Enable going High, VIH, inhibits the data outputs. The
Synchronous Burst Read operation can be resumed by setting Output Enable Low.
Table 6.
Synchronous Burst Read Bus operations(1)(2)
Bus operation
Synchronous
Burst Read
Step
L
B
A0-A18
DQ0-DQ31
T
VIL
X
Address input
VIH
T
VIH
VIL
Data output
X
VIH
X
VIH
VIH
High-Z
VIL
VIH
VIH
T
VIH
VIL
Data output
VIL
VIH
X
VIH
T
VIH
VIL
High-Z
VIH
X
X
VIH
X
X
X
High-Z
X
X
X
VIL
X
X
X
High-Z
RP K(3)
E
G
GD
Address Latch
VIL
VIH
X
VIH
Read
VIL
VIL
VIH
Read Suspend
VIL
VIH
Read Resume
VIL
Burst Address
Advance
Read Abort, E
Read Abort, RP
1. X = Don't care, VIL or VIH.
2. M15 = 0, bit M15 is in the Burst Configuration Register.
3. T = transition, see M6 in the Burst Configuration Register for details on the active edge of K.
22/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
3.3
Bus operations
Burst Configuration Register
The Burst Configuration Register is used to configure the type of bus access that the
memory will perform.
The Burst Configuration Register is set through the command interface and will retain its
information until it is re-configured, the device is reset, or the device goes into Reset/Powerdown mode. The Burst Configuration Register bits are described in Table 7. They specify the
selection of the burst length, burst type, burst X and Y latencies and the read operation.
Refer to Figure 4 and Figure 5 for examples of synchronous burst configurations.
3.3.1
Read Select bit (M15)
The Read Select bit, M15, is used to switch between Asynchronous and Synchronous Bus
Read operations. When the Read Select bit is set to ’1’, Bus Read operations are
asynchronous; when the Read Select but is set to ’0’, Bus Read operations are
synchronous.
On reset or power-up the Read Select bit is set to’1’ for asynchronous accesses.
3.3.2
X-Latency bits (M14-M11)
The X-Latency bits are used during Synchronous Bus Read operations to set the number of
clock cycles between the address being latched and the first data becoming available. For
correct operation the X-Latency bits can only assume the values in Table 7: Burst
Configuration Register. The X-Latency bits should also be selected in conjunction with
Table 8: Burst type definition to ensure valid settings.
3.3.3
Y-Latency bit (M9)
The Y-Latency bit is used during Synchronous Bus Read operations to set the number of
clock cycles between consecutive reads. The Y-Latency value depends on both the XLatency value and the setting in M9.
When the Y-Latency is ‘1’ the data changes each clock cycle; when the Y-Latency is ‘2’ the
data changes every second clock cycle. See Table 7: Burst Configuration Register, and
Table 8: Burst type definition for valid combinations of the Y-Latency, the X-Latency and the
Clock frequency.
3.3.4
Valid Data Ready bit (M8)
The Valid Data Ready bit controls the timing of the Valid Data Ready output pin, R. When
the Valid Data Ready bit is ’0’ the Valid Data Ready output pin is driven Low for the active
clock edge when invalid data is output on the bus. When the Valid Data Ready bit is ’1’ the
Valid Data Ready output pin is driven Low one clock cycle prior to invalid data being output
on the bus.
3.3.5
Burst Type bit (M7)
The Burst Type bit is used to configure the sequence of addresses read as sequential or
interleaved. When the Burst Type bit is ’0’ the memory outputs from interleaved addresses;
when the Burst Type bit is ’1’ the memory outputs from sequential addresses. See Table 8:
Burst type definition, for the sequence of addresses output from a given starting address in
each mode.
23/69
Bus operations
3.3.6
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Valid Clock Edge bit (M6)
The Valid Clock Edge bit, M6, is used to configure the active edge of the Clock, K, during
Synchronous Burst Read operations. When the Valid Clock Edge bit is ’0’ the falling edge of
the Clock is the active edge; when the Valid Clock Edge bit is ’1’ the rising edge of the Clock
is active.
3.3.7
Wrap Burst bit (M3)
The burst reads can be confined inside the 4 or 8 double-word boundary (wrap) or
overcome the boundary (no wrap). The Wrap Burst bit is used to select between wrap and
no wrap. When the Wrap Burst bit is set to ‘0’ the burst read wraps; when it is set to ‘1’ the
burst read does not wrap.
3.3.8
Burst Length bit (M2-M0)
The Burst Length bits set the maximum number of double-words that can be output during a
Synchronous Burst Read operation before the address wraps. Burst lengths of 4 or 8 are
available for both the sequential and interleaved burst types, and a continuous burst is
available for the sequential type.
Table 7: Burst Configuration Register gives the valid combinations of the Burst Length bits
that the memory accepts; Table 8: Burst type definition, gives the sequence of addresses
output from a given starting address for each length.
If either a Continuous or a No Wrap Burst Read has been initiated the device will output data
synchronously. Depending on the starting address, the device activates the Valid Data
Ready output to indicate that a delay is necessary before the data is output. If the starting
address is aligned to an 8 double-word boundary, the Continuous Burst mode will run
without activating the Valid Data Ready output. If the starting address is not aligned to an 8
double-word boundary, Valid Data Ready is activated to indicate that the device needs an
internal delay to read the successive words in the array.
M10, M5 and M4 are reserved for future use.
24/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 7.
Burst Configuration Register
Bit
Description
M15
Read Select
M14
M13-M11
X-Latency(1)
M10
M9
Y-Latency(2)
M8
Valid Data Ready
M7
Burst Type
M6
Valid Clock Edge
M5-M4
M3
M2-M0
Bus operations
Wrapping
Burst Length
Value
Description
0
Synchronous Burst Read
1
Asynchronous Read (default at power-on)
0
Reserved (default value)
000
Reserved (default value)
001
Reserved
010
Reserved
011
5, 5-1-1-1, 5-2-2-2
100
6, 6-1-1-1, 6-2-2-2
101
7, 7-1-1-1, 7-2-2-2
110
8, 8-1-1-1, 8-2-2-2
111
Reserved
0
Reserved (default value)
0
One Burst Clock cycle (default value)
1
Two Burst Clock cycles
0
R valid Low during valid Burst Clock edge (default
value)
1
R valid Low 1 data cycle before valid Burst Clock edge
0
Interleaved (default value)
1
Sequential
0
Falling Burst Clock edge (default value)
1
Rising Burst Clock edge
00
Reserved (default value)
01
Reserved
10
Reserved
11
Reserved
0
Wrap (default value)
1
No wrap
000
Reserved (default value)
001
4 double-words
010
8 double-words
011
Reserved
100
Reserved
101
Reserved
110
Reserved
111
Continuous
1. X latencies can be calculated as: (tAVQV – tLLKH + tQVKH) + tSYSTEM MARGIN < (X -1) tK. (X is an integer
number from 4 to 8, tK is the clock period and tSYSTEM MARGIN is the time margin required for the
calculation).
2. Y latencies can be calculated as: tKHQV + tSYSTEM MARGIN + tQVKH < Y tK.
25/69
Bus operations
Table 8.
M3
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Burst type definition
Starting
x4
x4
address sequential interleaved
x8
sequential
x8
interleaved
Continuous
0
0
0-1-2-3
0-1-2-3
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7-8-9-10..
0
1
1-2-3-0
1-0-3-2
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
1-2-3-4-5-6-7-8-9-10-11..
0
2
2-3-0-1
2-3-0-1
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
2-3-4-5-6-7-8-9-10-11-12..
0
3
3-0-1-2
3-2-1-0
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
3-4-5-6-7-8-9-10-11-12-13..
0
4
–
–
4-5-6-7-0-1-2-3
4-5-6-7-0-1-2-3
4-5-6-7-8-9-10-11-2-13-14..
0
5
–
–
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
5-6-7-8-9-10-11-12-13-14..
0
6
–
–
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
6-7-8-9-10-11-12-13-14-15..
0
7
–
–
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
7-8-9-10-11-12-13-14-15-16..
0
8
–
–
–
–
8-9-10-11-12-13-14-15-16-17..
1
0
0-1-2-3
–
0-1-2-3-4-5-6-7
–
0-1-2-3-4-5-6-7-8-9-10..
1
1
1-2-3-4
–
1-2-3-4-5-6-7-8
–
1-2-3-4-5-6-7-8-9-10-11..
1
2
2-3-4-5
–
2-3-4-5-6-7-8-9
–
2-3-4-5-6-7-8-9-10-11-12..
1
3
3-4-5-6
–
3-4-5-6-7-8-9-10
–
3-4-5-6-7-8-9-10-11-12-13..
1
4
4-5-6-7
–
4-5-6-7-8-9-10-11
–
4-5-6-7-8-9-10-11-12-13-14..
1
5
5-6-7-8
–
5-6-7-8-9-10-11-12
–
5-6-7-8-9-10-11-12-13-14..
1
6
6-7-8-9
–
6-7-8-9-10-11-12-13
–
6-7-8-9-10-11-12-13-14-15..
1
7
7-8-9-10
–
7-8-9-10-11-12-13-14
–
7-8-9-10-11-12-13-14-15-16..
1
8
8-9-10-11
–
8-9-10-11-12-13-14-15
–
8-9-10-11-12-13-14-15-16-17..
26/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 4.
Bus operations
Example Burst Configuration X-1-1-1
0
1
2
3
4
5
6
7
8
9
K
ADD
VALID
L
DQ
VALID
4-1-1-1
DQ
DQ
DQ
DQ
5-1-1-1
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
6-1-1-1
7-1-1-1
8-1-1-1
AI03841
Figure 5.
Example Burst Configuration X-2-2-2
0
1
2
3
4
5
6
7
8
9
K
ADD
VALID
L
DQ
DQ
DQ
DQ
NV
5-2-2-2
6-2-2-2
VALID
NV
VALID
NV
VALID
NV
VALID
NV
VALID
NV
NV
VALID
NV
VALID
NV
VALID
NV
7-2-2-2
8-2-2-2
NV=NOT VALID
AI04406b
27/69
Command interface
4
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Command interface
All Bus Write operations to the memory are interpreted by the command interface.
Commands consist of one or more sequential Bus Write operations. The commands are
summarized in Table 9: Commands. Refer to Table 9 in conjunction with the text
descriptions below.
4.1
Read Memory Array command
The Read Memory Array command returns the memory to Read mode. One Bus Write cycle
is required to issue the Read Memory Array command and return the memory to Read
mode. Subsequent read operations will output the addressed memory array data. Once the
command is issued the memory remains in Read mode until another command is issued.
From Read mode Bus Read commands will access the memory array.
4.2
Read Electronic Signature command
The Read Electronic Signature command is used to read the manufacturer code, the device
code or the Burst Configuration Register. One Bus Write cycle is required to issue the Read
Electronic Signature command. Once the command is issued subsequent Bus Read
operations, depending on the address specified, read the manufacturer code, the device
code or the Burst Configuration Register until another command is issued; see Table 5:
Asynchronous Read Electronic Signature operation.
4.3
Read Query command
The Read Query command is used to read data from the common Flash interface (CFI)
memory area. One Bus Write cycle is required to issue the Read Query command. Once
the command is issued subsequent Bus Read operations, depending on the address
specified, read from the common Flash interface memory area. See Appendix A: Common
Flash interface (CFI), Table 25, Table 26, Table 27, Table 28 and Table 29 for details on the
information contained in the common Flash interface (CFI) memory area.
28/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
4.4
Command interface
Read Status Register command
The Read Status Register command is used to read the Status Register. One Bus Write
cycle is required to issue the Read Status Register command. Once the command is issued
subsequent Bus Read operations read the Status Register until another command is issued.
The Status Register information is present on the output data bus (DQ1-DQ7) when Chip
Enable E and Output Enable G are at VIL and Output Disable is at VIH.
An interactive update of the Status Register bits is possible by toggling Output Enable or
Output Disable. It is also possible during a program or erase operation, by deactivating the
device with Chip Enable at VIH and then reactivating it with Chip Enable and Output Enable
at VIL and Output Disable at VIH.
The content of the Status Register may also be read at the completion of a program, erase
or suspend operation. During a Block Erase or Program command, DQ7 indicates the
Program/Erase controller status. It is valid until the operation is completed or suspended.
See the section on the Status Register and Table 11 for details on the definitions of the
Status Register bits.
4.5
Clear Status Register command
The Clear Status Register command can be used to reset bits 1, 3, 4 and 5 in the Status
Register to ‘0’. One Bus Write is required to issue the Clear Status Register command.
Once the command is issued the memory returns to its previous mode, subsequent Bus
Read operations continue to output the same data.
The bits in the Status Register are sticky and do not automatically return to ‘0’ when a new
Program or Erase command is issued. If any error occurs then it is essential to clear any
error bits in the Status Register by issuing the Clear Status Register command before
attempting a new Program, Erase or Resume command.
29/69
Command interface
4.6
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Block Erase command
The Block Erase command can be used to erase a block. It sets all of the bits in the block to
‘1’. All previous data in the block is lost. If the block is protected then the erase operation will
abort, the data in the block will not be changed and the Status Register will output the error.
Two Bus Write operations are required to issue the command; the first write cycle sets up
the Block Erase command, the second write cycle confirms the Block Erase command and
latches the block address in the Program/Erase controller and starts it. The sequence is
aborted if the Confirm command is not given and the device will output the Status Register
Data with bits 4 and 5 set to '1'.
Once the command is issued subsequent Bus Read operations read the Status Register.
See the section on the Status Register for details on the definitions of the Status Register
bits. During the Erase operation the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands will be ignored.
The command can be executed using either VDD (for a normal erase operation) or VPP (for a
fast erase operation). If VPP is in the VPPH range when the command is issued then a fast
erase operation will be executed, otherwise the operation will use VDD. If VPP goes below
the VPP Lockout voltage, VPPLK, during a fast erase the operation aborts, the Status
Register VPP Status bit is set to ‘1’ and the command must be re-issued.
Typical Erase times are given in Table 10.
See Appendix B: Flowcharts, Figure 23: Block Erase flowchart and pseudocode, for a
suggested flowchart on using the Block Erase command.
4.7
Program command
The Program command is used to program the memory array. Two Bus Write operations are
required to issue the command; the first write cycle sets up the Program command, the
second write cycle latches the address and data to be programmed in the Program/Erase
controller and starts it. A program operation can be aborted by writing FFFFFFFFh to any
address after the program set-up command has been given.
Once the command is issued subsequent Bus Read operations read the Status Register.
See the section on the Status Register for details on the definitions of the Status Register
bits. During the Program operation the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands will be ignored.
If Reset/Power-down, RP, falls to VIL during programming the operation will be aborted.
The command can be executed using either VDD (for a normal program operation) or VPP
(for a fast program operation). If VPP is in the VPPH range when the command is issued then
a fast program operation will be executed, otherwise the operation will use VDD. If VPP goes
below the VPP Lockout voltage, VPPLK, during a fast program the operation aborts and the
Status Register VPP Status bit is set to ‘1’. As data integrity cannot be guaranteed when the
program operation is aborted, the memory block must be erased and reprogrammed.
See Appendix B: Flowcharts on page 58, Figure 21: Program flowchart and pseudocode, for
a suggested flowchart on using the Program command.
30/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
4.8
Command interface
Program/Erase Suspend command
The Program/Erase Suspend command is used to pause a program or erase operation. The
command will only be accepted during a program or erase operation. It can be issued at any
time during a program or erase operation. The command is ignored if the device is already
in Suspend mode.
One Bus Write cycle is required to issue the Program/Erase Suspend command and pause
the Program/Erase controller. Once the command is issued it is necessary to poll the
Program/Erase Controller Status bit (bit 7) to find out when the Program/Erase controller
has paused; no other commands will be accepted until the Program/Erase controller has
paused. After the Program/Erase controller has paused, the memory will continue to output
the Status Register until another command is issued.
During the polling period between issuing the Program/Erase Suspend command and the
Program/Erase controller pausing it is possible for the operation to complete. Once the
Program/Erase Controller Status bit (bit 7) indicates that the Program/Erase controller is no
longer active, the Program Suspend Status bit (bit 2) or the Erase Suspend Status bit (bit 6)
can be used to determine if the operation has completed or is suspended. For timing on the
delay between issuing the Program/Erase Suspend command and the Program/Erase
controller pausing see Table 10.
During Program/Erase Suspend the Read Memory Array, Read Status Register, Read
Electronic Signature, Read Query and Program/Erase Resume commands will be accepted
by the command interface. Additionally, if the suspended operation was Erase then the
Program and the Program Suspend commands will also be accepted. When a program
operation is completed inside a Block Erase Suspend the Read Memory Array command
must be issued to reset the device in Read mode, then the Erase Resume command can be
issued to complete the whole sequence. Only the blocks not being erased may be read or
programmed correctly.
See Appendix B: Flowcharts, Figure 22: Program Suspend & Resume flowchart and
pseudocode, and Figure 24: Erase Suspend & Resume flowchart and pseudocode, for
suggested flowcharts on using the Program/Erase Suspend command.
4.9
Program/Erase Resume command
The Program/Erase Resume command can be used to restart the Program/Erase controller
after a Program/Erase Suspend operation has paused it. One Bus Write cycle is required to
issue the Program/Erase Resume command.
See Appendix B: Flowcharts, Figure 22: Program Suspend & Resume flowchart and
pseudocode, and Figure 24: Erase Suspend & Resume flowchart and pseudocode, for
suggested flowcharts on using the Program/Erase Resume command.
31/69
Command interface
4.10
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Set Burst Configuration Register command
The Set Burst Configuration Register command is used to write a new value to the Burst
Configuration Control Register which defines the burst length, type, X and Y latencies,
Synchronous/Asynchronous Read mode and the valid Clock edge configuration.
Two Bus Write cycles are required to issue the Set Burst Configuration Register command.
The first cycle writes the setup command and the address corresponding to the Set Burst
Configuration Register content. The second cycle writes the Burst Configuration Register
data and the confirm command. Once the command is issued the memory returns to Read
mode as if a Read Memory Array command had been issued.
The value for the Burst Configuration Register is always presented on A0-A15. M0 is on A0,
M1 on A1, etc.; the other address bits are ignored.
Commands(1)
Table 9.
Command
Cycles
Bus operations
1st cycle
2nd cycle
Op.
Addr.
Data
Op.
Addr.
Data
Read Memory Array
≥2
Write
X
FFh
Read
RA
RD
Read Electronic Signature
(manufacturer code)
≥2
Write
X
90h
Read
00000h
20h
Read Electronic Signature
(device code)
≥2
Write
X
90h
Read
00001h
IDh
Read Electronic Signature
(Burst Configuration Register)
≥2
Write
X
90h
Read
00005h
BCRh
2
Write
X
70h
Read
X
SRDh
≥2
Write
X
98h
Read
QAh
QDh
Clear Status Register
1
Write
X
50h
Block Erase
2
Write
X
20h
Write
BAh
D0h
Program
2
Write
X
40h
10h
Write
PA
PD
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Set Burst Configuration Register
2
Write
X
60h
Write
BCRh
03h
Read Status Register
Read Query
1. X = Don’t care; RA = Read Address, RD = Read Data, ID = Device Code, SRD = Status Register Data, PA
= Program Address; PD = Program Data, QA = Query Address, QD = Query Data, BA = Any address in the
Block, BCR = Burst Configuration Register value.
32/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 10.
Command interface
Program, erase times and program, erase endurance cycles(1)
M58BW016
Parameters
Typ
Max
Unit
Min
VPP = VDD VPP = 12 V VPP = VDD VPP = 12 V
Parameter Block (64 Kb)
Program
0.030
0.016
0.060
0.032
s
Main Block (512 Kb) Program
0.23
0.13
0.46
0.26
s
Parameter Block Erase
0.8
0.64
1.8
1.5
s
Main Block Erase
1.5
0.9
3
1.8
s
Program Suspend Latency
time
3
10
µs
Erase Suspend Latency time
10
30
µs
Program/Erase cycles (per
block)
100,000
cycles
1. TA = –40 to 125 °C, VDD = 2.7 V to 3.6 V, VDDQ = 2.4 V to VDD
33/69
Status Register
5
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Status Register
The Status Register provides information on the current or previous program or erase
operation. The various bits in the Status Register convey information and errors on the
operation. They are output on DQ7-DQ0.
To read the Status Register the Read Status Register command can be issued. The Status
Register is automatically read after Program, Erase or Program/Erase Resume commands.
The Status Register can be read from any address.
The contents of the Status Register can be updated during an erase or program operation
by toggling the Output Enable or Output Disable pins or by deactivating (Chip Enable, VIH)
and then reactivating (Chip Enable and Output Enable, VIL, and Output Disable, VIH.) the
device.
The Status Register bits are summarized in Table 11: Status Register bits. Refer to Table 11
in conjunction with the following text descriptions.
5.1
Program/Erase Controller Status (bit 7)
The Program/Erase Controller Status bit indicates whether the Program/Erase controller is
active or inactive. When the Program/Erase Controller Status bit is set to ‘0’, the
Program/Erase controller is active; when bit7 is set to ‘1’, the Program/Erase controller is
inactive.
The Program/Erase Controller Status is set to ‘0’ immediately after a Program/Erase
Suspend command is issued until the Program/Erase controller pauses. After the
Program/Erase controller pauses the bit is set to ‘1’.
During program and erase operations the Program/Erase Controller Status bit can be polled
to find the end of the operation. The other bits in the Status Register should not be tested
until the Program/Erase controller completes the operation and the bit is set to ‘1’.
After the Program/Erase controller completes its operation the Erase Status (bit5), Program
Status bits should be tested for errors.
5.2
Erase Suspend Status (bit 6)
The Erase Suspend Status bit indicates that an erase operation has been suspended and is
waiting to be resumed. The Erase Suspend Status should only be considered valid when the
Program/Erase Controller Status bit is set to ‘1’ (Program/Erase controller inactive); after a
Program/Erase Suspend command is issued the memory may still complete the operation
rather than entering the Suspend mode.
When the Erase Suspend Status bit is set to ‘0’, the Program/Erase controller is active or
has completed its operation; when the bit is set to ‘1’, a Program/Erase Suspend command
has been issued and the memory is waiting for a Program/Erase Resume command.
When a Program/Erase Resume command is issued the Erase Suspend Status bit returns
to ‘0’.
34/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
5.3
Status Register
Erase Status (bit 5)
The Erase Status bit can be used to identify if the memory has failed to verify that the block
has erased correctly. The Erase Status bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase controller inactive).
When the Erase Status bit is set to ‘0’, the memory has successfully verified that the block
has erased correctly. When the Erase Status bit is set to ‘1’, the Program/Erase controller
has applied the maximum number of pulses to the block and still failed to verify that the
block has erased correctly.
Once set to ‘1’, the Erase Status bit can only be reset to ‘0’ by a Clear Status Register
command or a hardware reset. If set to ‘1’ it should be reset before a new Program or Erase
command is issued, otherwise the new command will appear to fail.
5.4
Program Status (bit 4)
The Program Status bit is used to identify a program failure. Bit4 should be read once the
Program/Erase Controller Status bit is High (Program/Erase controller inactive).
When bit4 is set to ‘0’ the memory has successfully verified that the device has programmed
correctly. When bit4 is set to ‘1’ the device has failed to verify that the data has been
programmed correctly.
Once set to 1’, the Program Status bit can only be reset to ‘0’ by a Clear Status Register
command or a hardware reset. If set to ‘1’ it should be reset before a new Program or Erase
command is issued, otherwise the new command will appear to fail.
5.5
VPP Status (bit 3)
The VPP Status bit can be used to identify an invalid voltage on the VPP pin during fast
program and erase operations. The VPP pin is only sampled at the beginning of a program
or erase operation. Indeterminate results can occur if VPP becomes invalid during a fast
program or erase operation.
When the VPP Status bit is set to ‘0’, the voltage on the VPP pin was sampled at a valid
voltage; when the VPP Status bit is set to ‘1’, the VPP pin has a voltage that is below the VPP
Lockout voltage, VPPLK.
Once set to ‘1’, the VPP Status bit can only be reset to ‘0’ by a Clear Status Register
command or a hardware reset. If set to ‘1’ it should be reset before a new Program or Erase
command is issued, otherwise the new command will appear to fail.
35/69
Status Register
5.6
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Program Suspend Status (bit 2)
The Program Suspend Status bit indicates that a Program operation has been suspended
and is waiting to be resumed. The Program Suspend Status should only be considered valid
when the Program/Erase Controller Status bit is set to ‘1’ (Program/Erase controller
inactive); after a Program/Erase Suspend command is issued the memory may still
complete the operation rather than entering the Suspend mode.
When the Program Suspend Status bit is set to ‘0’, the Program/Erase controller is active or
has completed its operation; when the bit is set to ‘1’, a Program/Erase Suspend command
has been issued and the memory is waiting for a Program/Erase Resume command.
When a Program/Erase Resume command is issued the Program Suspend Status bit
returns to ‘0’.
5.7
Block Protection Status (bit 1)
The Block Protection Status bit can be used to identify if a program or erase operation has
tried to modify the contents of a protected block.
When the Block Protection Status bit is set to ‘0’, no program or erase operations have been
attempted to protected blocks since the last Clear Status Register command or hardware
reset; when the Block Protection Status bit is set to ‘1’, a program or erase operation has
been attempted on a protected block.
Once set to ‘1’, the Block Protection Status bit can only be reset Low by a Clear Status
Register command or a hardware reset. If set to ‘1’ it should be reset before a new Program
or Erase command is issued, otherwise the new command will appear to fail.
All others bits are reserved.
Table 11.
Status Register bits
Bit
Name
7
Program/Erase Controller
Status
6
Erase Suspend Status
5
Erase Status
4
Program Status,
3
VPP Status
2
Program Suspend Status
1
Erase/Program in a protected
block
Other bits reserved
36/69
Logic level
Definition
’1’
Ready
’0’
Busy
’1’
Suspended
’0’
In progress or completed
’1’
Erase error
’0’
Erase success
’1’
Program error
’0’
Program success
’1’
VPP invalid, abort
’0’
VPP OK
’1’
Suspended
’0’
In progress or completed
’1’
Program/erase on protected block, abort
’0’
No operations to protected sectors
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
6
Maximum ratings
Maximum ratings
Stressing the device above the ratings listed in Table 12: Absolute maximum ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 12.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
Min
Max
TBIAS
Temperature under bias
–40
125
°C
TSTG
Storage temperature
–55
155
°C
Input or output voltage
–0.6
VDDQ + 0.6
VDDQIN + 0.6
V
Supply voltage
–0.6
4.2
V
–0.6
13.5(1)
V
VIO
VDD, VDDQ, VDDQIN
VPP
Program voltage
1. Cumulative time at a high voltage level of 13.5 V should not exceed 80 hours on VPP pin.
37/69
DC and AC parameters
7
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 13: Operating and AC measurement conditions. Designers should check that the
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 13.
Operating and AC measurement conditions
Value
Parameter
Units
Min
Max
Supply voltage (VDD)
2.7
3.6
V
Input/output supply voltage (VDDQ)
2.4
VDD
V
Grade 6
–40
90
°C
Grade 3
–40
125
°C
Ambient temperature (TA)
Load capacitance (CL)
30
Clock rise and fall times
4
ns
Input rise and fall times
4
ns
Input pulses voltages
Input and output timing ref. voltages
Figure 6.
0 to VDDQ
V
VDDQ/2
V
AC measurement input/output waveform
VDDQ
VDDQIN
VDDQ/2
VDDQIN/2
0V
AI04153
1. VDD = VDDQ.
38/69
pF
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 7.
DC and AC parameters
AC measurement load circuit
1.3 V
1N914
3.3 kΩ
DEVICE
UNDER
TEST
OUT
CL
CL includes JIG capacitance
Table 14.
Symbol
CIN
COUT
AI04154
Device capacitance(1)(2)
Parameter
Input capacitance
Output capacitance
Test condition
Typ
Max
Unit
VIN = 0 V
6
8
pF
VOUT = 0 V
8
12
pF
1. TA = 25 °C, f = 1 MHz
2. Sampled only, not 100% tested.
39/69
DC and AC parameters
Table 15.
Symbol
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC characteristics
Parameter
Test condition
Min
Max
Unit
ILI
Input Leakage current
0 V≤ VIN ≤ VDDQ
±1
µA
ILO
Output Leakage current
0 V≤ VOUT ≤VDDQ
±5
µA
IDD
Supply current (Random Read)
E = VIL, G = VIH, M58BW016DT/B
fadd = 6 MHz M58BW016FT/B
20
IDDP-UP(1) Supply current (Power-up)
IDDB
Supply current (Burst Read)
Supply current (Standby)
IDD1
25
mA
applies only to
M58BW016FT/B
20
mA
E = VIL, G = VIH, M58BW016DT/B
fclock = 40 MHz M58BW016FT/B
30
mA
E = VIL, G = VIH, M58BW016DT/B
fclock = 56 MHz M58BW016FT/B
30
mA
40
mA
E = RP = VDD ± M58BW016DT/B
0.2 V
M58BW016FT/B
60
µA
150
µA
E = VIH
Supply current (Auto Low-Power)
E = VSS ± 0.2 V,
RP = VDD ± 0.2 V
60
µA
IDD2
Supply current (Reset/Power-down)
RP = VSS ± 0.2 V
60
µA
IDD3
Supply current (Program or Erase,
Set Lock bit, Erase Lock bit)
Program, Block Erase in progress
30
mA
IDD4
Supply current
(Erase/Program Suspend)
M58BW016DT/B
40
µA
M58BW016FT/B
150
µA
IPP
Program current (Read or Standby)
VPP ≥ VPP1
± 30
µA
IPP1
Program current (Read or Standby)
VPP ≤ VPP1
± 30
µA
IPP2
Program current (Power-down)
RP = VIL
±5
µA
IPP3
Program current (Program)
Program in progress
IPP4
Program current (Erase) Erase in
progress
VIL
Input Low voltage
VIH
E = VIH
VPP = VPP1
200
µA
VPP = VPPH
20
mA
VPP = VPP1
200
µA
VPP = VPPH
20
mA
0.2VDDQIN
V
Input High voltage (for DQ lines)
0.8VDDQIN VDDQ+0.3
V
VIH
Input High voltage (for input only
lines)
0.8VDDQIN
VOL
Output Low voltage
VOH
Output High voltage CMOS
VPP1
Program voltage
(program or erase operations)
2.7
3.6
V
VPPH
Program voltage
(program or erase operations)
11.4
12.6
V
VLKO
VDD supply voltage (erase and
program lockout)
2.2
V
VPPLK
VPP supply voltage (erase and
program lockout)
11.4
V
–0.5
IOL = 100 µA
IOH = –100 µA
3.6
V
0.1
V
VDDQ–0.1
V
1. IDDP-UP is defined only during the power-up phase of the M58BW016FT/B, from the moment current is applied with RP Low
to the moment when the supply voltage has become stable and RP is brought to High.
40/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 8.
DC and AC parameters
Asynchronous Bus Read AC waveforms
tAVAV
A0-A18
VALID
tAVQV
tEHLX
tLLEL
L
tELQX
tELQV
tAXQX
E
tGLQX
tGLQV
tEHQX
tEHQZ
G
GD
tGHQX
tGHQZ
DQ0-DQ31
OUTPUT
See also Page Read
AI04407C
.
Table 16.
Asynchronous Bus Read AC characteristics
M58BW016
Symbol
Parameter
Test condition
Unit
70
80
tAVAV
Address Valid to Address Valid
E = VIL, G = VIL
Min
70
80
ns
tAVQV
Address Valid to Output Valid
E = VIL, G = VIL
Max
70
80
ns
tAXQX
Address Transition to Output Transition
E = VIL, G = VIL
Min
0
0
ns
tEHLX
Chip Enable High to Latch Enable Transition
Min
0
0
ns
tEHQX
Chip Enable High to Output Transition
G = VIL
Min
0
0
ns
tEHQZ
Chip Enable High to Output Hi-Z
G = VIL
Max
20
20
ns
tELQV(1)
Chip Enable Low to Output Valid
G = VIL
Max
70
80
ns
tELQX
Chip Enable Low to Output Transition
G = VIL
Min
0
0
ns
tGHQX
Output Enable High to Output Transition
E = VIL
Min
0
0
ns
tGHQZ
Output Enable High to Output Hi-Z
E = VIL
Max
15
15
ns
tGLQV
Output Enable Low to Output Valid
E = VIL
Max
25
25
ns
tGLQX
Output Enable to Output Transition
E = VIL
Min
0
0
ns
tLLEL
Latch Enable Low to Chip Enable Low
Min
0
0
ns
1. Output Enable G may be delayed up to tELQV - tGLQV after the falling edge of Chip Enable E without
increasing tELQV.
41/69
DC and AC parameters
Figure 9.
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Asynchronous Latch Controlled Bus Read AC waveforms
A0-A18
VALID
tAVLL
L
tLHAX
tLHLL
tLLLH
tEHLX
tELLL
E
tEHQX
tEHQZ
tGLQX
tGLQV
G
tLLQX
tLLQV
tGHQX
GHQZ
DQ0-DQ31
OUTPUT
See also Page Read
AI03645
Table 17.
Asynchronous Latch Controlled Bus Read AC characteristics
M58BW016
Symbol
42/69
Parameter
Test condition
Unit
70
80
Min
0
0
ns
Min
0
0
ns
tAVLL
Address Valid to Latch Enable Low
tEHLX
Chip Enable High to Latch Enable Transition
tEHQX
Chip Enable High to Output Transition
G = VIL
Min
0
0
ns
tEHQZ
Chip Enable High to Output Hi-Z
G = VIL
Max
20
20
ns
tELLL
Chip Enable Low to Latch Enable Low
Min
0
0
ns
E = VIL
tGHQX Output Enable High to Output Transition
E = VIL
Min
0
0
ns
tGHQZ
Output Enable High to Output Hi-Z
E = VIL
Max
15
15
ns
tGLQV
Output Enable Low to Output Valid
E = VIL
Max
25
25
ns
tGLQX
Output Enable Low to Output Transition
E = VIL
Min
0
0
ns
tLHAX
Latch Enable High to Address Transition
E = VIL
Min
5
5
ns
tLHLL
Latch Enable High to Latch Enable Low
Min
10
10
ns
tLLLH
Latch Enable Low to Latch Enable High
Min
10
10
ns
tLLQV
Latch Enable Low to Output Valid
E = VIL, G = VIL Max
70
80
ns
tLLQX
Latch Enable Low to Output Transition
E = VIL, G = VIL Min
0
0
ns
E = VIL
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Figure 10. Asynchronous Page Read AC waveforms
A0-A1
A0 and/or A1
tAVQV1
tAXQX
OUTPUT + 1
OUTPUT
DQ0-DQ31
AI03646
Table 18.
Asynchronous Page Read AC characteristics(1)
M58BW016
Symbol
Parameter
Test condition
Unit
70
80
tAVQV1 Address Valid to Output Valid
E = VIL, G = VIL
Max
25
25
ns
tAXQX
E = VIL, G = VIL
Min
6
6
ns
Address Transition to Output Transition
1. For other timings see Table 16: Asynchronous Bus Read AC characteristics.
43/69
44/69
RP
VPP
DQ0-DQ31
W
G
E=L
A0-A18
tAVLL
tWHEH
INPUT
tDVWH
tWHDX
tWHWL
tWHAX
tWLWH
Write Cycle
tELWL
tAVWH
VALID
INPUT
RP = VHH
Write Cycle
tPHWH
tVPHWH
VALID
tWHQV
tWHGL
VALID
Read Status Register
RP = VDD
tQVPL
tQVVPL
VALID SR
AI03651
DC and AC parameters
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 11. Asynchronous Write AC waveforms
RP
VPP
DQ0-DQ31
W
G
E
L
A0-A18
tAVLL
tLLLH
tWHDX
Write Cycle
tWLWH
tELWL
tAVWH
tLHAX
INPUT
tLLWH
tELLL
tAVLH
VALID
tDVWH
tVPHWH
tWHWL
tWHEH
tWHAX
VALID
Write Cycle
RP = VHH
INPUT
tWHQV
tWHGL
VALID
Read Status Register
AI03652
RP = VDD
tQVPL
tQVVPL
VALID SR
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Figure 12. Asynchronous Latch Controlled Write AC waveforms
45/69
DC and AC parameters
Table 19.
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Asynchronous Write and Latch Controlled Write AC characteristics
M58BW016
Symbol
46/69
Parameter
Test condition
Unit
70
80
Min
0
0
ns
tAVLL
Address Valid to Latch Enable Low
tAVWH
Address Valid to Write Enable High
E = VIL
Min
50
50
ns
tDVWH
Data Input Valid to Write Enable High
E = VIL
Min
50
50
ns
tELLL
Chip Enable Low to Latch Enable Low
Min
0
0
ns
tELWL
Chip Enable Low to Write Enable Low
Min
0
0
ns
tLHAX
Latch Enable High to Address Transition
Min
5
5
ns
tLLLH
Latch Enable Low to Latch Enable High
Min
10
10
ns
tLLWH
latch Enable Low to Write Enable High
Min
50
50
ns
tQVVPL Output Valid to VPP Low
Min
0
0
ns
tVPHWH VPP High to Write Enable High
Min
0
0
ns
E = VIL
tWHAX
Write Enable High to Address Transition
E = VIL
Min
0
0
ns
tWHDX
Write Enable High to Input Transition
E = VIL
Min
0
0
ns
tWHEH
Write Enable High to Chip Enable High
Min
0
0
ns
tWHGL
Write Enable High to Output Enable Low
Min
150
150
ns
tWHQV
Write Enable High to Output Valid
Min
175
175
ns
tWHWL
Write Enable High to Write Enable Low
Min
20
20
ns
tWLWH
Write Enable Low to Write Enable High
Min
60
60
ns
tQVPL
Output Valid to Reset/Power-down Low
Min
0
0
ns
E = VIL
DQ0-DQ31
G
E
L
A0-A18
K
VALID
tELLL
tAVLL
1
Note: n depends on Burst X-Latency.
tLLKH
tKHLL
0
tKHLX
tKHAX
Setup
tAVQV
tKHQV
tGLQV
n
OUTPUT
tQVKH
n+1
n+2
AI04409
tGHQX
tGHQZ
tEHQX
tEHQZ
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Figure 13. Synchronous Burst Read (data valid from ‘n’ clock rising edge)
47/69
DC and AC parameters
Table 20.
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Synchronous Burst Read AC characteristics(1)
M58BW016
Symbol
Parameter
Test condition
tAVLL
Address Valid to Latch Enable Low
tBHKH
Unit
70
80
E = VIL
Min
0
0
ns
Burst Address Advance High to Valid
Clock Edge
E = VIL, G = VIL, L = VIH
Min
8
8
ns
tBLKH
Burst Address Advance Low to Valid
Clock Edge
E = VIL, G = VIL, L = VIH
Min
8
8
ns
tELLL
Chip Enable Low to Latch Enable low
Min
0
0
ns
tGLQV
Output Enable Low to Output Valid
E = VIL, L = VIH
Min
25
25
ns
tKHAX
Valid Clock Edge to Address
Transition
E = VIL
Min
5
5
ns
tKHLL
Valid Clock Edge to Latch Enable Low
E = VIL
Min
0
0
ns
tKHLX
Valid Clock Edge to Latch Enable
Transition
E = VIL
Min
0
0
ns
E = VIL, M58BW016DT/B Min
Valid Clock Edge to Output Transition G = VIL,
L = VIH M58BW016FT/B Min
3
3
ns
tKHQX
2
2
ns
M58BW016DT/B Min
6
6
ns
tLLKH
Latch Enable Low to Valid Clock Edge E = VIL
M58BW016FT/B Min
5
5
ns
tQVKH
(2)
Output Valid to Valid Clock Edge
E = VIL, G = VIL, L = VIH
Min
6
6
ns
tRLKH
Valid Data Ready Low to Valid Clock
Edge
E = VIL, G = VIL, L = VIH
Min
6
6
ns
tKHQV
Valid Clock Edge to Output Valid
E = VIL, G = VIL, L = VIH
Max
11
11
ns
1. For other timings see Table 16: Asynchronous Bus Read AC characteristics.
2. Data output should be read on the valid clock edge.
Figure 14. Synchronous Burst Read (data valid from ‘n’ clock rising edge)
n
n+1
n+2
n+3
n+4
n+5
K
tKHQV
tQVKH
Q0
DQ0-DQ31
Q1
Q2
Q3
Q4
Q5
tKHQX
SETUP
Burst Read
Q0 to Q3
Note: n depends on Burst X-Latency
AI04408b
1. For set up signals and timings see Synchronous Burst Read.
48/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Figure 15. Synchronous Burst Read - continuous - valid data ready output
K
Output (1)
V
V
V
V
V
tRLKH
R
(2)
AI03649
1. Valid Data Ready = Valid Low during valid clock edge
2. V= Valid output.
3. R is an open drain output with an internal pull up resistor of 1 MΩ. The internal timing of R follows DQ. An external resistor,
typically 300 kΩ. for a single memory on the R bus, should be used to give the data valid set up time required to recognize
that valid data is available on the next valid clock edge.
Figure 16. Synchronous Burst Read - Burst Address Advance
K
ADD
VALID
L
ADD
Q0
Q1
Q2
tGLQV
G
tBLKH
tBHKH
B
AI03650
49/69
DC and AC parameters
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 17. Reset, Power-down and Power-up AC waveforms - control pins low
W, G, E L
tPHLL
tPHWL
tPHEL
tPHGL
tPLRZ
Hi-Z
Hi-Z
R
tPHWL
tPHEL
tPHGL
tPHRH
RP
tVDHPH
tPLPH
VDD, VDDQ
Power-up
Reset
AI14240
Figure 18. Reset, Power-down and Power-up AC waveforms - control pins toggling
tWLRH
tGLRH
tELRH
tLLRH
W, G, E L
tPHLL
tPHWL
tPHEL
tPHGL
Hi-Z
Hi-Z
R
tPLRZ
tPHRH
tPHRH
RP
tVDHPH
tPLPH
VDD, VDDQ
Power-up
Reset
AI14241
50/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Table 21.
Reset, Power-down and Power-up AC characteristics
Symbol
Parameter
Min
tPHEL
Reset/Power-down High to Chip Enable Low
50
tPHLL
Reset/Power-down High to Latch Enable Low
50
tPHQV(1) Reset/Power-down High to Output Valid
Max Unit
ns
ns
95
ns
tPHWL
Reset/Power-down High to Write Enable Low
50
ns
tPHGL
Reset/Power-down High to Output Enable Low
50
ns
tPLPH
Reset/Power-down Low to Reset/Power-down High
100
tPHRH(1) Reset/Power-down High to Valid Data Ready High
tVDHPH
Supply voltages High to Reset/Power-down High
ns
95
M58BW016DT/B
10
µs
M58BW016FT/B
50
µs
tPLRZ
Reset/Power-down Low to Data Ready High Impedance
80
ns
tWLRH
Write Enable Low to Data Ready High Impedance
80
ns
tGLRH
Output Enable Low to Data Ready High Impedance
80
ns
tELRH
Chip Enable Low to Data Ready High Impedance
80
ns
tLLRH
Latch Enable Low to Data Ready High Impedance
80
ns
1. This time is tPHEL + tAVQV or tPHEL + tELQV.
51/69
Package mechanical
8
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Package mechanical
Figure 19. PQFP80 - 80 lead plastic quad flat pack, package outline
Ne
A2
N
1
e
D2 D1 D
Nd
b
E2
A
E1
CP
L1
E
c
A1
QFP-B
α
L
1. Drawing is not to scale.
Table 22.
PQFP80 - 80 lead plastic quad flat pack, package mechanical data
millimeters
inches
Symbol
Typ
Min
A
52/69
Typ
Min
3.400
A1
A2
Max
0.1339
0.250
2.800
Max
0.0098
2.550
3.050
b
0.300
c
0.130
0.1102
0.1004
0.1201
0.450
0.0118
0.0177
0.230
0.0051
0.0091
0.9134
0.9035
0.9232
D
23.200
22.950
23.450
D1
20.000
19.900
20.100
0.7874
0.7835
0.7913
D2
18.400
–
–
0.7244
–
–
e
0.800
–
–
0.0315
–
–
E
17.200
16.950
17.450
0.6772
0.6673
0.6870
E1
14.000
13.900
14.100
0.5512
0.5472
0.5551
E2
12.000
–
–
0.4724
–
–
L
0.800
0.650
0.950
0.0315
0.0256
0.0374
L1
1.600
–
–
0.0630
–
–
7°
0°
7°
a
0°
N
80
80
Nd
24
24
Ne
16
16
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Package mechanical
Figure 20. LBGA80 10 × 12 mm - 8 × 10 active ball array, 1 mm pitch, package outline
D
D1
FD
FE
SD
SE
E
E1
BALL "A1"
ddd
e
e
b
A
A2
A1
BGA-Z05
1. Drawing is not to scale.
Table 23.
LBGA80 10 × 12 mm - 8 × 10 active ball array, 1 mm pitch, package
mechanical data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.700
A1
Max
0.0669
0.350
0.0138
A2
1.100
0.0433
b
0.500
0.0197
D
10.000
–
–
0.3937
–
–
D1
7.000
–
–
0.2756
–
–
ddd
0.120
0.0047
E
12.000
–
–
0.4724
–
–
E1
9.000
–
–
0.3543
–
–
e
1.000
–
–
0.0394
–
–
FD
1.500
–
–
0.0591
–
–
FE
1.500
–
–
0.0591
–
–
SD
0.500
–
–
0.0197
–
–
SE
0.500
–
–
0.0197
–
–
53/69
Part numbering
9
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Part numbering
Table 24.
Ordering information scheme
Example:
M58 BW016D
T
80 T
3
F T
Device type
M58
Architecture
B = Burst mode
Operating voltage
W = VDD = 2.7 V to 3.6 V; VDDQ = VDDQIN = 2.4 to VDD
Device function
016D = 16 Mbit (x 32), boot block, burst, 0.15 µm
016F = 16 Mbit (x 32), boot block, burst, 0.11 µm
Array matrix
T = Top boot
B = Bottom boot
Speed
70 = 70 ns
80 = 80 ns
Package
T = PQFP80
ZA = LBGA 10 × 12 mm
Temperature range
3 = Automotive grade certified(1), –40 to 125 °C
Version
F = Silicon version F
Option
T = Tape and reel packing
F = ECOPACK package, tape and reel packing
1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening according to
AEC Q001 & Q002 or equivalent.
Note:
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact the ST Sales Office nearest to you.
54/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Appendix A
Common Flash interface (CFI)
Common Flash interface (CFI)
The common Flash interface is a JEDEC approved, standardized data structure that can be
read from the Flash memory device. It allows a system software to query the device to
determine various electrical and timing parameters, density information and functions
supported by the memory. The system can interface easily with the device, enabling the
software to upgrade itself when necessary.
When the CFI Query command (RCFI) is issued the device enters CFI Query mode and the
data structure is read from the memory. Table 25, Table 26, Table 27, Table 28 and Table 29
show the addresses used to retrieve the data.
Table 25.
Query structure overview
Offset
Sub-section name
Description
00h
Manufacturer code
01h
Device code
10h
CFI Query identification string
Command set ID and algorithm data offset
1Bh
System interface information
Device timing and voltage information
27h
Device geometry definition
Flash memory layout
P(h)(1)
Primary algorithm-specific extended query
table
Additional information specific to the primary
algorithm (optional)
A(h)(2)
Alternate algorithm-specific extended query Additional information specific to the
table
alternate algorithm (optional)
1. Offset 15h defines P which points to the primary algorithm extended query address table.
2. Offset 19h defines A which points to the alternate algorithm extended query address table.
Table 26.
CFI - query address and data output(1)(2)
Address A0-A18
Data
Instruction
10h
51h
"Q"
11h
52h
"R"
12h
59h
"Y"
13h
03h
14h
00h
15h
35h
16h
00h
17h
00h
18h
00h
19h
00h
1Ah
00h
51h; "Q"
Query ASCII String 52h; "R"
59h; "Y"
Primary vendor:
Command set and control interface ID code
Primary algorithm extended query address table:
P(h)
Alternate vendor:
Command Set and Control interface ID code
Alternate algorithm extended query address table
1. The x 8 or Byte Address and the x 16 or Word Address mode are not available.
2. Query Data are always presented on DQ7-DQ0. DQ31-DQ8 are set to '0'.
55/69
Common Flash interface (CFI)
Table 27.
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
CFI - device voltage and timing specification
Address A0-A18
Data
1Bh
27h (1)
1Ch
(1)
VDD max, 3.6 V
(2)
36h
Description
VDD min, 2.7 V
1Dh
B4h
VPP min
1Eh
C6h(2)
VPP max
1Fh
04h
2n ms typical time-out for Word, DWord prog – not Available
20h
00h
2n ms, typical time-out for max buffer write – not Available
21h
0Ah
2n ms, typical time-out for Erase Block
22h
00h
2n ms, typical time-out for chip erase – not Available
23h-24h
Reserved
25h
04h
2n x typical for individual block erase time-out maximum
26h
00h
2n x typical for chip erase max time-out – not Available
1. Bits are coded in binary code decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in hexadecimal and scaled in Volts while bit3 to bit0 are in binary code decimal and
scaled in 100 mV.
Table 28.
Device geometry definition
Address A0-A18
Data
Description
27h
15h
2n number of bytes memory size
28h
03h
Device interface sync./async.
29h
00h
Organization sync./async.
2Ah
00h
2Bh
00h
2Ch
02h
2Dh
1Eh
2Eh
00h
2Fh
00h
30h
01h
31h
07h
32h
00h
33h
20h
34h
00h
Page size in bytes, 2n
Bit7-0 = number of Erase Block regions in device
Number (n-1) of blocks of identical size; n=31
Erase Block region information x 256 bytes per Erase Block
(64 Kbytes)
Number (n-1) of blocks of identical size; n=8
56/69
Erase Block region information x 256 bytes per Erase Block
(8 Kbytes)
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 29.
Common Flash interface (CFI)
Extended query information
Address Address
offset
A18-A0
Data (Hex)
Description
(P)h
35h
50h
"P"
(P+1)h
36h
52h
"R"
(P+2)h
37h
49h
"Y"
(P+3)h
38h
31h
Major version number
(P+4)h
39h
31h
Minor version number
Optional Feature: (1=yes, 0=no)
bit0, Chip Erase Supported (0=no)
bit1, Suspend Erase Supported (1=yes)
bit2, Suspend Program Supported (1=yes)
bit3, Lock/Unlock Supported (1=yes)
bit4, Queue Erase Supported (0=no)
bit 31-5 reserved for future use
(P+5)h
3Ah
86h
(P+6)h
3Bh
01h
(P+7)h
3Ch
00h
(P+8)h
3Dh
00h
(P+9)h
3Eh
(P+A)h
3Fh
01h
Query ASCII string - extended table
Optional features: Synchronous Read supported
Function allowed after suspend:
Program allowed after Erase Suspend (1=yes)
Bit 7-1 reserved for future use
Reserved
57/69
Flowcharts
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Appendix B
Flowcharts
Figure 21. Program flowchart and pseudocode
Start
Program Command:
– write 40h
– write Address & Data
(memory enters read status
state after the Program command)
Write 40h
Write Address
& Data
Read Status
Register
b7 = 1
do:
– read status register
(E or G must be toggled)
NO
while b7 = 0
YES
b3 = 0
NO
VPP Invalid
Error (1)
NO
Program
Error (1)
NO
Program to Protect
Block Error
If b3 = 1, VPP invalid error:
– error handler
YES
b4 = 0
If b4 = 1, Program error:
– error handler
YES
b1 = 0
If b1 = 1, Program to Protected Block Error:
– error handler
YES
End
AI03850b
1. If an error is found, the Status Register must be cleared before further P/E operations.
58/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Flowcharts
Figure 22. Program Suspend & Resume flowchart and pseudocode
Start
Write B0h
Program/Erase Suspend Command:
– write B0h
– write 70h
Write 70h
do:
– read status register
Read Status
Register
b7 = 1
NO
while b7 = 0
YES
b2 = 1
NO
Program Complete
If b2 = 0, Program completed
YES
Read Memory Array Command:
– write FFh
– one or more data reads
from other blocks
Write FFh
Read data from
another block
Write D0h
Write FFh
Program Continues
Read Data
Program Erase Resume Command:
– write D0h
to resume erasure
– if the program operation completed
then this is not necessary. The device
returns to Read Array as normal
(as if the Program/Erase Suspend
command was not issued).
AI00612b
59/69
Flowcharts
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 23. Block Erase flowchart and pseudocode
Start
Erase Command:
– write 20h
– write Block Address
(A11-A18) & D0h
(memory enters read status
state after the Erase command)
Write 20h
Write Block Address
& D0h
NO
Read Status
Register
Suspend
b7 = 1
YES
NO
Suspend
Loop
do:
– read status register
(E or G must be toggled)
if Erase command given execute
suspend erase loop
while b7 = 0
YES
b3 = 0
NO
VPP Invalid
Error (1)
YES
Command
Sequence Error
NO
Erase
Error (1)
NO
Erase to Protected
Block Error
If b3 = 1, VPP invalid error:
– error handler
YES
b4 and b5
=1
If b4, b5 = 1, Command Sequence error:
– error handler
NO
b5 = 0
If b5 = 1, Erase error:
– error handler
YES
b1 = 0
If b1 = 1, Erase to Protected Block Error:
– error handler
YES
End
AI03851b
1. If an error is found, the Status Register must be cleared before further P/E operations.
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Flowcharts
Figure 24. Erase Suspend & Resume flowchart and pseudocode
Start
Write B0h
Program/Erase Suspend Command:
– write B0h
– write 70h
Write 70h
do:
– read status register
Read Status
Register
b7 = 1
NO
while b7 = 0
YES
b6 = 1
NO
Erase Complete
If b6 = 0, Erase completed
YES
Read Memory Array command:
– write FFh
– one or more data reads
from other blocks
Write FFh
Read data from
another block
or Program
Write D0h
Write FFh
Erase Continues
Read Data
Program/Erase Resume command:
– write D0h to resume the Erase
operation
– if the Erase operation completed
then this is not necessary. The device
returns to Read mode as normal
(as if the Program/Erase suspend
was not issued).
AI00615b
61/69
Flowcharts
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 25. Power-up sequence followed by Synchronous Burst Read
Power-up
or Reset
Asynchronous Read
Write 60h command
BCR bit 15 = '1'
Set Burst Configuration Register Command:
– write 60h
– write 03h
and BCR on A15-A0
Write 03h with A15-A0
BCR inputs
Synchronous Read
BCR bit 15 = '0'
AI03834b
62/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Flowcharts
Figure 26. Command interface and Program/Erase controller flowchart (a)
WAIT FOR
COMMAND
WRITE
90h
READ
ARRAY
NO
YES
READ ELEC.
SIGNATURE
98h
NO
D
YES
READ CFI
70h
NO
YES
READ
STATUS
20h
NO
YES
ERASE
SET-UP
40h
NO
YES
ERASE
COMMAND
ERROR
NO
D0h
PROGRAM
SET-UP
50h
YES
A
YES
C
NO
E
CLEAR
STATUS
D
READ
STATUS
B
AI03835
63/69
Flowcharts
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 27. Command interface and Program/Erase controller flowchart (b)
E
60h
NO
YES
FFh
SET BCR
SET_UP
03h
NO
YES
NO
YES
D
AI03836b
64/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Flowcharts
Figure 28. Command interface and Program/Erase controller flowchart (c)
A
B
ERASE
YES
READY
NO
NO
B0h
READ
STATUS
YES
ERASE
SUSPEND
YES
READY
NO
NO
ERASE
SUSPENDED
READ
STATUS
YES
READ
STATUS
YES
70h
NO
40h
YES
PROGRAM
SET_UP
NO
READ
ARRAY
NO
D0h
C
YES
READ
STATUS
AI03837
65/69
Flowcharts
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 29. Command interface and Program/Erase controller flowchart (d)
C
B
PROGRAM
YES
READY
NO
B0h
NO
READ
STATUS
YES
PROGRAM
SUSPEND
YES
READY
NO
NO
PROGRAM
SUSPENDED
READ
STATUS
YES
READ
STATUS
YES
70h
NO
READ
ARRAY
NO
D0h
YES
READ
STATUS
AI03838
66/69
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Revision history
Revision history
Table 30.
Document revision history
Date
Version
Changes
January-2001
01
First Issue.
05-Jun-2001
02
Major rewrite and restructure.
15-Jun-2001
03
Nd and Ne values changed in PQFP80 package mechanical table.
17-Jul-2001
04
PQFP80 package outline drawing and mechanical data table updated.
17-Dec-2001
05
tLEAD removed from absolute maximum ratings (Table 12).
80, 90 and 100 ns speed classes defined (Table 16, Table 17, Table 18,
Table 19 and Table 20 clarified accordingly).
Figure 13, Figure 14, Figure 15 and Figure 16 clarified.
Temperature range 3 and 6 added.
Table 13, Table 14, Table 15, Table 21 and CFI Table 26, Table 27,
Table 28, Table 29 clarified.
Document status changed from Product Preview to Preliminary Data.
17-Jan-2002
06
DC characteristics IPP, IPP1 and IDD1 clarified.
AC Bus Read characteristics timing tGHQZ clarified.
30-Aug-2002
6.1
Revision numbering modified: a minor revision will be indicated by
incrementing the tenths digit, and a major revision, by incrementing the
units digit of the previous version (e.g. revision version 06 becomes 6.0).
References of VPP pin used for block protection purposes removed.
Figure 8 modified.
4-Sep-2002
7.0
Datasheet status changed from Preliminary Data to full Datasheet.
tWLWH parameter modified in Table 19: Asynchronous Write and Latch
Controlled Write AC characteristics.
13-May-2003
7.1
Revision history moved to end of document. VPP clarified in Program
and Block Erase commands and Status Register, VPP Status bit. VPPLK
added to DC characteristics table. Timing tKHQV modified.
16-Oct-2003
7.2
Silicon Version added to Ordering Information Scheme.
03-Mar-2005
8.0
Tuning block protection feature removed from the whole document and
root part numbers M58BW016BT/B have been removed.
Figure 21, Figure 22, Figure 23, Figure 24, Figure 25 and Figure 27
updated.
LBGA80 package (ZA) removed. Lead-free option added.
90 and 100 ns access times removed and 70 ns added.
Temperature rage 6 removed from Table 24: Ordering information
scheme.
06-Sep-2005
9.0
Load capacitance updated in Table 13: Operating and AC measurement
conditions.
3-Mar-2006
10.0
Updated Table 24: Ordering information scheme on page 54 and
Disclaimer information. Converted document to new template.
16-Jun-2006
11
M58BW016FT and M58BW016FB part numbers added. Small text
changes.
67/69
Revision history
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 30.
Document revision history (continued)
Date
Changes
09-Nov-2006
12
LBGA80 package added (see Figure 20 and Table 23).
M58BW016FT and M58BW016FB behavior in Burst mode specified
under Section 3.2.1: Synchronous Burst Read.
IDDB, IDD1 and IDD4 current values specified for M58BW016FT and
M58BW016FB in Table 15: DC characteristics, IDD5 added.
tVDHPH specified for M58BW016FT and M58BW016FB in Table 21:
Reset, Power-down and Power-up AC characteristics.
tKHQX specified for M58BW016FT and M58BW016FB in Table 20:
Synchronous Burst Read AC characteristics.
23h-24h reserved in Table 27: CFI - device voltage and timing
specification. 3Fh reserved in Table 29: Extended query information.
24-Nov-2006
13
IDD current specified for M58BW016DT/B and M58BW016FT/B in
Table 15: DC characteristics.
14
Table 7: Burst Configuration Register and Table 21: Reset, Power-down
and Power-up AC characteristics updated.
Modified values for tLLKH in Table 20: Synchronous Burst Read AC
characteristics.
Figure 17: Reset, Power-down and Power-up AC waveforms - control
pins low updated and Figure 18: Reset, Power-down and Power-up AC
waveforms - control pins toggling added.
Small text changes.
05-Oct-2007
68/69
Version
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
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69/69