Renesas LSIs M5M29GB/T320VP-80 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29GB/T320VP are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 48pin TSOP(I) . FEATURES Organization Boot Block M5M29GB320VP M5M29GT320VP ................................. 2,097,152 word x 16bit ................................. 4,194,304 word x 8 bit Other Functions Soft Ware Command Control Selective Block Lock Status Register Read Alternating Back Ground Program/Erase Operation Between Bank(I) ,Bank(II),Bank(III) and Bank(IV) Supply voltage ................................ .............................. VCC = 2.7 ~ 3.6V Access time .............................. 80ns (Vcc=3.0~3.6V) 90ns (Vcc=2.7~3.6V) Power Dissipation ................................. 72 mW (Max. at 5MHz) Read (After Automatic Power saving) .......... 0.33µW (typ.) Program/Erase ................................. 126mW (Max.) ................................. 0.33µW (typ.) Standby Deep power down mode ....................... 0.33µW (typ.) Auto program for Bank(I) and Bank(II) Program Time ................................. 4ms (typ.) Program Unit (Byte Program) ......................... 1word/1byte (Page Program) ......................... 128word/256byte Auto program for Bank(III) and Bank(IV) Program Time ................................. 4ms (typ.) ................................. 128word/256byte Program Unit Auto Erase ................................. 40 ms (typ.) Erase time Erase Unit Bank(I) Boot Block ..................... 4Kword/8Kbyte x 2 Parameter Block .............. 4Kword/8Kbyte x 6 Main Block ...................... 32Kword/64Kbyte x 7 Bank(II) Main Block ...................... 32Kword/64Kbyte x 8 Bank(III) Main Block ...................... 32Kword/64Kbyte x 24 Bank(IV) Main Block ...................... 32Kword/64Kbyte x 24 ........................Bottom Boot ........................Top Boot Package 48-Lead, 12mm x 20mm TSOP (type-I) APPLICATION Code Strage Digital Cellular Phone Telecommunication Mobile Computing Machine PDA (Personal Digital Assistance) Car Navigation System Video Game Machine Program/Erase cycles ......................................... 100Kcycles PIN CONFIGURATION (TOP VIEW) 320VP A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RP# NC WP# RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 320VP 1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 41 9 40 10 39 11 12 13 14 38 M5M29GB/T 320VP 37 36 35 15 34 16 33 17 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25 A16 BYTE# GND DQ 15/A-1 DQ 7 DQ 14 DQ 6 DQ 13 DQ 5 DQ 12 DQ 4 VCC DQ 11 DQ 3 DQ 10 DQ 2 DQ 9 DQ 1 DQ 8 DQ 0 OE# GND CE# A0 Outline 48pin TSOP type-I (12 X 20mm) VP(Normal bend) 1 NC : NO CONNECTION 48P3E-C Rev3.0_48a_bazz Renesas LSIs M5M29GB/T320VP-80 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY BLOCK DIAGRAM 128 WORD PAGE BUFFER Main Block 70 32KW A20 VCC (3.3V) A19 GND (0V) A18 24 A17 A16 A15 A14 A13 Main Block 47 32KW Main Block 46 32KW X-DECODER A12 24 A11 ADDRESS INPUTS A10 A9 A8 A7 A6 A5 Main Block 23 Main Block 22 32KW 32KW Main Block 15 Main Block 14 32KW 32KW Main Block 8 Parameter Block 7 32KW 4KW Parameter Block 2 4KW 4KW 4KW 8 A4 A3 7 A2 6 A1 Block 1 2 Boot Boot Block 0 A0 Y-GATE / SENSE AMP. Y-DECODER STATUS / ID REGISTER MULTIPLEXER CHIP ENABLE INPUT OUTPUT ENABLE INPUT WRITE ENABLE INPUT WRITE PROTECT INPUT RESET/POWER DOWN INPUT BYTE ENABLE INPUT READY/BUSY OUTPUT CE# OE# WE# WP# RP# BYTE# CUI WSM INPUT/OUTPUT BUFFERS RY/BY# DQ 15/A-1 DQ14DQ 13 DQ12 DQ 3DQ 2DQ1DQ0 DATA INPUTS/OUTPUTS M5M29GB/T320VP (8/16 bit version) 32M Flash Memory Type name M 5 M 29G T 320 VP Operating Voltage : 29G : 2.7 - 3.6V Standard / BGO Type 29V : 2.3 - 2.7V Standard / BGO Type 29W : 1.65 - 2.2V Standard / BGO Type 2 Boot Block : T : Top Boot B : Bottom Boot Density/Write Protect/ Word Organizetion : 320 : 32M WP1#, x8/x16 Package : VP : 48pin TSOP(I) 12mm x 20mm (Nomal Pinout) Rev3.0_48a_bazz Renesas LSIs M5M29GB/T320VP-80 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan Keep safety first in your circuit designs! • Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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New publication, effective April 2003. Specifications subject to change without notice Rev3.0_48a_bazz