MA729WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE PINNING Applications • Super-high speed switching circuit • Small current rectification DESCRIPTION PIN 1 Cathode 2 Anode 2 1 SZ Top View Marking Code: "SZ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 30 V Reverse Voltage VR 30 V Average Forward Current IO 200 mA Maximum (Peak) Forward Current IFM 300 mA IFSM 1 A Junction Temperature TJ 150 O Storage Temperature Range Ts - 55 to + 150 O Repetitive Peak Reverse Voltage Non-repetitive Peak Forward Surge Current 1) 1) C C The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. Unit Forward Voltage at IF = 200 mA VF - 0.55 V Reverse Current at VR = 30 V IR - 50 µA Terminal Capacitance at f = 1 MHz CT 30 - pF Reverse Recovery Time at IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω trr 3 - ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 MA729WS SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 MA729WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006