SEMTECH_ELEC MA729WS

MA729WS
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
PINNING
Applications
• Super-high speed switching circuit
• Small current rectification
DESCRIPTION
PIN
1
Cathode
2
Anode
2
1
SZ
Top View
Marking Code: "SZ"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
VRRM
30
V
Reverse Voltage
VR
30
V
Average Forward Current
IO
200
mA
Maximum (Peak) Forward Current
IFM
300
mA
IFSM
1
A
Junction Temperature
TJ
150
O
Storage Temperature Range
Ts
- 55 to + 150
O
Repetitive Peak Reverse Voltage
Non-repetitive Peak Forward Surge Current
1)
1)
C
C
The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
Characteristics at Ta = 25 OC
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at IF = 200 mA
VF
-
0.55
V
Reverse Current
at VR = 30 V
IR
-
50
µA
Terminal Capacitance
at f = 1 MHz
CT
30
-
pF
Reverse Recovery Time
at IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω
trr
3
-
ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
MA729WS
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
MA729WS
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
HE
A
D
E
bp
UNIT
A
bp
C
D
E
HE
mm
1.10
0.80
0.40
0.25
0.15
0.00
1.80
1.60
1.35
1.15
2.80
2.30
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006