SDB720S SILICON EPITAXIAL PLANAR DIODE SCHOTTKY BARRIER DIODE for high speed switching circuit and small current rectification applications 3 1 2 Marking Code: FZ SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 30 V Reverse Voltage VR 30 V Non-repetitive Peak Surge Current IFSM 1 A Average Forward Current IO 200 mA Junction Temperature Tj 125 O Storage Temperature Range Ts -55 to +125 O Repetitive Peak Reverse Voltage C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit Forward Voltage at IF = 200 mA VF - - 0.55 V Reverse Current at VR = 30 V IR - - 50 μA Total Capacitance at VR = 0, f = 1 MHz CT - 30 - pF Reverse Recovery Time at IR = IF = 10 mA trr - 3 - ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 18/12/2005 SDB720S SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 18/12/2005