MAC4DLM Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com Features • • • • • • • • • TRIACS 4.0 AMPERES RMS 600 − 800 VOLTS Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Four−Quadrant Triggering Blocking Voltage to 600 V On−State Current Rating of 4.0 Amperes RMS at 93°C Low Level Triggering and Holding Characteristics Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available MT2 G MARKING DIAGRAMS 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) VDRM, VRRM 600 V On−State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 93°C) IT(RMS) 4.0 A ITSM 40 A I2t 6.6 A2sec PGM 0.5 W PG(AV) 0.1 W Peak Gate Current (Pulse Width ≤ 10 sec, TC = 93°C) IGM 0.2 A Peak Gate Voltage (Pulse Width ≤ 10 sec, TC = 93°C) VGM 5.0 V Operating Junction Temperature Range TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 sec, TC = 93°C) Average Gate Power (t = 8.3 msec, TC = 93°C) November, 2005 − Rev. 3 1 2 DPAK CASE 369C STYLE 6 YWW AC 4DLMG 3 4 DPAK−3 CASE 369D STYLE 6 1 2 YWW AC 4DLMG 3 Y WW AC4DLM G = = = = Year Work Week Device Code Pb−Free Package PIN ASSIGNMENT Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. © Semiconductor Components Industries, LLC, 2005 MT1 1 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC4DLM/D MAC4DLM THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes (Note 3) Symbol Max Unit RJC RJA RJA 3.5 88 80 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max − − − − 0.01 2.0 − 1.3 1.6 − − − − 1.8 2.1 2.4 4.2 3.0 3.0 3.0 5.0 0.5 0.5 0.5 0.5 0.62 0.57 0.65 0.74 1.3 1.3 1.3 1.3 Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) IDRM, IRRM TJ = 25°C TJ = 110°C mA ON CHARACTERISTICS Peak On−State Voltage (Note 4) − (ITM = ± 6.0 A) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) VGT Gate Non−Trigger Voltage (VD = 12 V, RL = 100 , TJ = 110°C) MT2(+), G(+); MT2(+), G(−); MT2(−), G(−); MT2(−), G(+) VGD Holding Current (VD = 12 V, Gate Open, Initiating Current = ± 200 mA) IH Latching Current MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IL (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 10 mA) V mA V V 0.1 0.4 − − 1.5 15 − − − − 1.75 5.2 2.1 2.2 10 10 10 10 − 3.0 − 10 − − mA mA DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/sec, TJ = 110°C, f = 250 Hz, CL = 5.0 fd, LL = 80 mH, RS = 56 , CS = 0.03 fd) With snubber see Figure 11 di/dt(c) Critical Rate of Rise of Off−State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C) A/ms dv/dt V/s 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8″ from case for 10 seconds. 4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. ORDERING INFORMATION Device MAC4DLM−001 MAC4DLM−001G MAC4DLMT4 MAC4DLMT4G Package Type Package Shipping † DPAK−3 369D 75 Units / Rail DPAK−3 (Pb−Free) 369D 75 Units / Rail DPAK 369C 2500 / Tape & Reel DPAK (Pb−Free) 369C 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MAC4DLM Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off−State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off−State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On−State Voltage IH Holding Current on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III Quadrant 1 MainTerminal 2 + (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM P(AV) , AVERAGE POWER DISSIPATION (WATTS) 110 = 30° 105 60° 90° 100 α α 95 120° = CONDUCTION ANGLE 180° dc 90 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 α 4.0 α 120° 90° = CONDUCTION ANGLE 3.0 2.0 60° = 30° 1.0 0 0 1.0 0.5 2.0 1.5 3.0 2.5 Figure 2. On−State Power Dissipation TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 110°C 1.0 MAXIMUM @ TJ = 25°C 0.1 0.5 1.5 1.0 2.0 2.5 3.5 3.0 4.0 3.5 Figure 1. RMS Current Derating 1.0 0.1 ZJC(t) = RJC(t)Sr(t) 0.01 4.0 0.1 1.0 10 100 1000 10 K VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On−State Characteristics Figure 4. Transient Thermal Response 1.0 7.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) 8.0 I GT, GATE TRIGGER CURRENT (mA) 5.0 IT(RMS), RMS ON−STATE CURRENT (AMPS) 10 Q4 6.0 5.0 dc 180° IT(RMS), RMS ON−STATE CURRENT (AMPS) 100 0 6.0 4.0 r(t) , TRANSIENT RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON−STATE CURRENT (AMPS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) MAC4DLM Q3 4.0 Q2 3.0 Q1 2.0 1.0 0 −40 −25 Q4 Q1 0.8 Q2 Q3 0.6 0.4 0.2 −10 5.0 20 35 50 65 80 95 110 −40 −25 −10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature http://onsemi.com 4 110 MAC4DLM 12 IL, LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) 5.0 4.0 3.0 MT2 NEGATIVE 2.0 MT2 POSITIVE 1.0 0 −40 −25 10 8.0 6.0 4.0 Q4 2.0 Q1 Q3 0 −10 5.0 20 35 50 65 80 95 110 −40 −25 −10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 40 110 10 VPK = 400 V dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s) VD = 400 V TJ = 110°C 35 30 25 100°C TJ = 110°C 90°C 1.0 20 15 MAC4DLM 10 5.0 tw VDRM f= 1 2 tw (di/dt)c = 6f ITM 1000 0.1 100 1000 10 K 0 1.0 2.0 3.0 4.0 5.0 6.0 RGK, GATE−MT1 RESISTANCE (OHMS) di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 9. Minimum Exponential Static dv/dt versus Gate−MT1 Resistance Figure 10. Critical Rate of Rise of Commutating Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON-POLAR CL TRIGGER CONTROL STATIC dv/dt (V/ s) Q2 RS − CS MT2 1N914 51 G ADJUST FOR + di/dt(c) 200 V MT1 Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 MAC4DLM PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− MAC4DLM PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M STYLE 6: PIN 1. 2. 3. 4. T MT1 MT2 GATE MT2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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