MCR12DCM, MCR12DCN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com Features • • • • • • SCRs 12 AMPERES RMS 600 − 800 VOLTS Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available G A K 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12DCM MCR12DCN VDRM, VRRM On−State RMS Current (180° Conduction Angles; TC = 90°C) IT(RMS) Average On−State Current (180° Conduction Angles; TC = 90°C) Value Unit 1 2 V 3 12 A DPAK CASE 369C STYLE 4 IT(AV) 7.8 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A Circuit Fusing Consideration (t = 8.3 msec) I2t 41 A2sec PGM 5.0 W PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 sec, TC = 90°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to 125 °C Storage Temperature Range Tstg −40 to 150 °C Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, TC = 90°C) Forward Average Gate Power (t = 8.3 msec, TC = 90°C) 600 800 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. MARKING DIAGRAM YWW R1 2DCxG Y WW R12DCx G = Year = Work Week = Device Code x= M or N = Pb−Free Package PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 5 1 Publication Order Number: MCR12DCM/D MCR12DCM, MCR12DCN THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes (Note 3) Symbol Max Unit RJC RJA RJA 2.2 88 80 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max − − − − 0.01 5.0 − 1.3 1.9 2.0 − 7.0 − 20 40 0.5 − 0.65 − 1.0 2.0 0.2 − − 4.0 − 22 − 40 80 4.0 − 22 − 40 80 50 200 − Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak Forward On−State Voltage (Note 4) (ITM = 20 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) Gate Non−Trigger Voltage (VD = 12 V, RL = 100 ) Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) VTM IGT TJ = 25°C TJ = *40°C mA VGT TJ = 25°C TJ = *40°C VGD V V V TJ = 125°C IH TJ = 25°C TJ = −40°C Latching Current (VD = 12 V, IG = 20 mA, TJ = 25°C) (VD = 12 V, IG = 40 mA, TJ = −40°C) mA IL mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt V/s 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8″ from case for 10 seconds. 4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. ORDERING INFORMATION Device MCR12DCMT4 MCR12DCMT4G MCR12DCNT4 MCR12DCNT4G Package Shipping† DPAK 2500 / Tape and Reel DPAK (Pb−Free) 2500 / Tape and Reel DPAK 2500 / Tape and Reel DPAK (Pb−Free) 2500 / Tape and Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MCR12DCM, MCR12DCN Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off−State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off−State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On−State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode − P(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 125 120 115 110 105 100 = Conduction Angle 95 90 = 30° 85 0 1.0 2.0 60° 3.0 4.0 90° 5.0 120° 6.0 180° 7.0 180° 14 120° 90° 12 60° dc = Conduction Angle 10 8.0 = 30° 6.0 4.0 2.0 0 8.0 0 1.0 2.0 4.0 3.0 5.0 6.0 7.0 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) IT(AV), AVERAGE ON−STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On−State Power Dissipation 100 8.0 1.0 TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 125°C r(t) , TRANSIENT RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON−STATE CURRENT (AMPS) dc 16 10 MAXIMUM @ TJ = 25°C 1.0 0.1 0.1 ZJC(t) = RJC(t)Sr(t) 0.01 0 1.0 2.0 3.0 5.0 4.0 0.1 1.0 10 100 1000 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On−State Characteristics Figure 4. Transient Thermal Response http://onsemi.com 3 10 K MCR12DCM, MCR12DCN 0.9 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT (mA) 100 10 1.0 −40 −25 −10 0.7 0.6 0.5 0.4 0.3 0.2 5.0 20 35 50 65 80 95 −40 −25 −10 110 125 5.0 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 100 IL, LATCHING CURRENT (mA) 100 10 1.0 −40 −25 −10 5.0 20 35 50 65 80 95 110 10 1.0 −40 −25 −10 125 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 1000 VD = 800 V TJ = 125°C STATIC dv/dt (V/ s) IH , HOLDING CURRENT (mA) 0.8 100 10 1000 100 RGK, GATE−CATHODE RESISTANCE (OHMS) Figure 9. Exponential Static dv/dt versus Gate−Cathode Resistance http://onsemi.com 4 10 K 125 MCR12DCM, MCR12DCN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− T STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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