MCR716, MCR718 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control, process control, temperature, light and speed control. http://onsemi.com SCRs 4.0 AMPERES RMS 400 − 600 VOLTS Features • • • • • • • Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Surface Mount Lead Form − Case 369C Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available G A K 4 1 2 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR716 MCR718 VDRM, VRRM On−State RMS Current (180° Conduction Angles; TC = 90°C) IT(RMS) 4.0 A Average On−State Current (180° Conduction Angles; TC = 90°C) IT(AV) 2.6 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 25 A Circuit Fusing Consideration (t = 8.3 msec) I2t 2.6 A2sec PGM 0.5 W PG(AV) 0.1 W Forward Peak Gate Current (Pulse Width ≤ 1.0 sec, TC = 90°C) IGM 0.2 A Operating Junction Temperature Range TJ −40 to +110 °C Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, TC = 90°C) Forward Average Gate Power (t = 8.3 msec, TC = 90°C) Storage Temperature Range Value Unit DPAK CASE 369C STYLE 4 V 400 600 MARKING DIAGRAM YWW MCR 71xG Y WW MCR71x G Tstg °C −40 to +150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. = Year = Work Week = Device Code x= M or N = Pb−Free Package PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 5 1 Publication Order Number: MCR716/D MCR716, MCR718 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RJC 3.0 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RJA 80 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max − − − − 10 200 Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current; RGK = 1 k (Note 3) (VAK = Rated VDRM or VRRM) TC = 25°C TC = 110°C IDRM IRRM A ON CHARACTERISTICS Peak Reverse Gate Blocking Voltage (IGR = 10 A) VRGM 10 12.5 18 V Peak Reverse Gate Blocking Current (VGR = 10 V) IRGM − − 1.2 A Peak Forward On−State Voltage (Note 4) (ITM = 5.0 A Peak) (ITM = 8.2 A Peak) VTM − − 1.3 1.5 1.5 2.2 1.0 − 25 − 75 300 0.3 − 0.2 0.55 − − 0.8 1.0 − 0.4 − 1.0 − 5.0 10 − − − − 5.0 10 Gate Trigger Current (Continuous dc) (Note 5) (VD = 12 Vdc, RL = 30 Ohms) V A IGT TC = 25°C TC = −40°C Gate Trigger Voltage (Continuous dc) (Note 5) (VD = 12 Vdc, RL = 30 Ohms) VGT TC = 25°C TC = −40°C TC = 110°C Holding Current (Note 3) (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) V IH TC = 25°C TC = −40°C mA Latching Current (Note 3) (VD = 12 Vdc, IG = 2.0 mA, TC = 25°C) (VD = 12 Vdc, IG = 2.0 mA, TC = −40°C) IL mA Total Turn-On Time (Source Voltage = 12 V, RS = 6 k, IT = 8 A(pk), RGK = 1 k) (VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s) tgt − 2.0 5.0 s Critical Rate of Rise of Off−State Voltage (VD = 0.67 x Rated VDRM, RGK = 1 k, Exponential Waveform, TJ = 110°C) dv/dt 5.0 10 − V/s Repetitive Critical Rate of Rise of On−State Current (f = 60 Hz, IPK = 30 A, PW = 100 s, dIG/dt = 1 A/s) di/dt − − 100 A/s DYNAMIC CHARACTERISTICS 2. Case 369C, when surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or RGK = 1 k. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test: Pulse Width ≤ 2 ms, Duty Cycle ≤ 2%. 5. RGK current not included in measurements. ORDERING INFORMATION Device MCR716T4 MCR716T4G Package Shipping † DPAK DPAK (Pb−Free) 2500 / Tape and Reel MCR718T4 MCR718T4G DPAK DPAK (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MCR716, MCR718 Voltage Current Characteristic of SCR + Current Anode + VTM Symbol Parameter VDRM Peak Repetitive Off−State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off−State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On−State Voltage IH Holding Current on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode − 30°C P(AV), AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) 110 60°C 90°C 120°C 180°C 105 DC 95 100 0 1.0 2.0 3.0 5.0 4.0 180°C DC 2.0 1.0 0 0 1.0 2.0 3.0 4.0 Figure 1. Average Current Derating Figure 2. On−State Power Dissipation Typical @ TJ = 25°C 10 Maximum @ TJ = 25°C 1.0 0.5 90°C 120°C 3.0 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) Maximum @ TJ = 110°C 0.1 30°C 60°C 4.0 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) r(t) , TRANSIENT RESISTANCE (NORMALIZED) IT, INSTANTANEOUS ON−STATE CURRENT (AMPS) 100 5.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.0 ZJC(t) = RJC(t)•r(t) 0.1 0.01 0.1 1.0 10 100 1000 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On−State Characteristics Figure 4. Transient Thermal Response http://onsemi.com 3 5.0 10,000 MCR716, MCR718 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT ( A) 35 30 0.5 25 20 15 −40 −20 0 20 40 60 80 0 100 110 −20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 2.0 2.0 IL , LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) −40 1.5 1.0 0.5 0 −40 −20 0 20 40 60 80 1.5 1.0 0.5 0 −40 100 110 −20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature http://onsemi.com 4 MCR716, MCR718 PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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