SPANSION MBM29DL163BE

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20880-4E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
Dual Operation
MBM29DL16XTE/BE70/90
■ FEATURES
• 0.23 µm Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes
(Refer to “MBM29DL16XTE/BE Device Bank Divisions Table” in ■GENERAL DESCRIPTION)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
(Continued)
■ PRODUCT LINE UP
Part No.
MBM29DL16XTE/BE70
MBM29DL16XTE/BE90
Address Access Time (Max)
70 ns
90 ns
CE Access Time (Max)
70 ns
90 ns
OE Access Time (Max)
30 ns
Power Supply Voltage
35 ns
3.0 V
+0.6 V
−0.3 V
■ PACKAGES
48-pin plastic TSOP (1)
48-pin plastic TSOP (1)
48-pin plastic FBGA
Marking Side
Marking Side
(FPT-48P-M19)
(FPT-48P-M20)
(BGA-48P-M11)
MBM29DL16XTE/BE70/90
(Continued)
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(1) (Package suffix: TN – Normal Bend Type, TR – Reversed Bend Type)
48-pin FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
Eight 4K word and thirty one 32K word sectors in word mode
Eight 8K byte and thirty one 64K byte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• HiddenROM region
64K byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At VIL, allows protection of boot sectors, regardless of sector group protection/unprotection status
At VACC, increases program performance
• Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit ≤ 2.5 V
• Program Suspend/Resume
Suspends the program operation to allow a read in another sector with in the same device
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)
*: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
2
MBM29DL16XTE/BE70/90
■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M
words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package.
These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V
VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in
standard EPROM programmers.
MBM29DL16XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate
memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories with the additional capability
of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either
a program or an erase) operation is simultaneously taking place on the other bank.
In the MBM29DL16XTE/BE, a new design concept is implemented, so called “Sliding Bank Architecture”. Under
this concept, the MBM29DL16XTE/BE can be produced a series of devices with different Bank 1/Bank 2 size
combinations; 0.5 Mb/15.5 Mb, 2 Mb/14 Mb, 4 Mb/12 Mb, 8 Mb/8 Mb.
The standard MBM29DL16XTE/BE offer access times 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29DL16XTE/BE are pin and command set compatible with JEDEC standard E2PROMs. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the devices
is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29DL16XTE/BE are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29DL16XTE/BE are erased when shipped from the
factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,
by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
Fujitsu’s Flash technology combines years of EPROM and E2PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29DL16XTE/BE memories electrically erase the entire chip
or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one
byte/word at a time using the EPROM programming mechanism of hot electron injection.
3
MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE Device Bank Divisions Table
Device
Part Number
Organization
Bank 1
Megabits
Sector Sizes
Megabits
Sector Sizes
MBM29DL161TE/BE
0.5 Mbit
Eight 8K byte/4K word
15.5 Mbit
Thirty-one
64K byte/32K word
MBM29DL162TE/BE
2 Mbit
Eight 8K byte/4K word,
three 64K byte/32K word
14 Mbit
Twenty-eight
64K byte/32K word
MBM29DL163TE/BE
4 Mbit
Eight 8K byte/4K word,
seven 64K byte/32K word
12 Mbit
Twenty-four
64K byte/32K word
MBM29DL164TE/BE
8 Mbit
Eight 8K byte/4K word,
fifteen 64K byte/32K word
8 Mbit
Sixteen
64K byte/32K word
× 8/× 16
4
Bank 2
MBM29DL16XTE/BE70/90
■ PIN ASSIGNMENTS
TSOP(1)
A15
A14
A13
A12
A11
A10
A9
A8
A19
N.C.
WE
RESET
N.C.
WP/ACC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
(Marking Side)
Normal Bend
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
VSS
CE
A0
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
A0
CE
VSS
OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A-1
VSS
BYTE
A16
(FPT-48P-M19)
A1
A2
A3
A4
A5
A6
A7
A17
A18
RY/BY
WP/ACC
N.C.
RESET
WE
N.C.
A19
A8
A9
A10
A11
A12
A13
A14
A15
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
(Marking Side)
Reverse Bend
(FPT-48P-M20)
(Continued)
5
MBM29DL16XTE/BE70/90
(Continued)
FBGA
(TOP VIEW)
Marking side
A6
B6
C6
D6
E6
A13
A12
A14
A15
A16
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
D4
A19
E4
DQ5
F4
DQ12
G4
VCC
H4
DQ4
D3
E3
A4
WE
C4
B4
RESET N.C.
A3
B3
C3
RY/BY WP/ACC A18
F6
G6
H6
BYTE DQ15/A-1 VSS
N.C. DQ2
F3
G3
H3
DQ10
DQ11
DQ3
F2
DQ8
G2
H2
DQ9
DQ1
A2
A7
B2
A17
C2
A6
D2
A5
E2
DQ0
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE
OE
VSS
(BGA-48P-M11)
■ PIN DESCRIPTIONS
Pin Name
Pin Name
Function
A19 to A0, A-1
Address Input
RY/BY
Ready/Busy Output
DQ15 to DQ0
Data Input/Output
BYTE
Selects 8-bit or 16-bit mode
WP/ACC
Hardware Write Protection/
Program Acceleration
CE
Chip Enable
OE
Output Enable
VSS
Device Ground
WE
Write Enable
VCC
Device Power Supply
Hardware Reset Pin/
Temporary Sector Group Unprotection
N.C.
No Internal Connection
RESET
6
Function
MBM29DL16XTE/BE70/90
■ BLOCK DIAGRAM
VCC
Cell Matrix
Bank 2 Address
A19 to A0
(A-1)
(Bank 2)
Y-Gating & Data Latch
VSS
X-Decoder
RY/BY
State
Control
&
Command
Register
Status
DQ15 to DQ0
Control
X-Decoder
Bank 1 Address
Cell Matrix
(Bank 1)
Y-Gating &
Data Latch
RESET
WE
CE
OE
BYTE
WP/ACC
DQ15 to DQ0
■ LOGIC SYMBOL
A-1
20
A19 to A0
16 or 8
DQ15 to DQ0
CE
OE
WE
RY/BY
RESET
BYTE
WP/ACC
7
MBM29DL16XTE/BE70/90
■ DEVICE BUS OPERATION
MBM29DL16XTE/BE User Bus Operations Table (BYTE = VIH)
CE OE WE
Operation
A0
A1
A6
A9
DQ15 to DQ0 RESET WP/ACC
Auto-Select Manufacturer Code*1
L
L
H
L
L
L
VID
Code
H
X
Auto-Select Device Code*1
L
L
H
H
L
L
VID
Code
H
X
Read*3
L
L
H
A0
A1
A6
A9
DOUT
H
X
Standby
H
X
X
X
X
X
X
High-Z
H
X
Output Disable
L
H
H
X
X
X
X
High-Z
H
X
Write (Program/Erase)
L
H
L
A0
A1
A6
A9
DIN
H
X
Enable Sector Group Protection*2, *4
L
VID
L
H
L
VID
X
H
X
L
L
H
L
H
L
VID
Code
H
X
Temporary Sector Group Unprotection*
X
X
X
X
X
X
X
X
VID
X
Reset (Hardware) / Standby
X
X
X
X
X
X
X
High-Z
L
X
Boot Block Sector Write Protection
X
X
X
X
X
X
X
X
X
L
Verify Sector Group Protection*2, *4
5
= Pulse input. See ■DC CHARACTERISTICS for voltage levels.
Legend: L = VIL, H = VIH, X = VIL or VIH,
*1: Manufacturer and device codes are accessed via a command register write sequence. See “MBM29DL16XTE/
BE Command Definitions Table”.
*2: Refer to “Sector Group Protection” in ■FUNCTIONAL DESCRIPTION.
*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*4: VCC = +2.7 V to +3.6 V
*5: Also used for the extended sector group protection.
MBM29DL16XTE/BE User Bus Operations Table (BYTE = VIL)
Operation
CE
15/
OE WE DQ
A-1
A0
A1
A6
A9
DQ7 to DQ0 RESET WP/ACC
Auto-Select Manufacturer Code*1
L
L
H
L
L
L
L
VID
Code
H
X
Auto-Select Device Code*1
L
L
H
L
H
L
L
VID
Code
H
X
Read*
L
L
H
A-1
A0
A1
A6
A9
DOUT
H
X
Standby
H
X
X
X
X
X
X
X
High-Z
H
X
Output Disable
L
H
H
X
X
X
X
X
High-Z
H
X
Write (Program/Erase)
L
H
L
A-1
A0
A1
A6
A9
DIN
H
X
L
VID
L
L
H
L
VID
X
H
X
L
L
H
L
L
H
L
VID
Code
H
X
X
X
X
X
X
X
X
X
X
VID
X
Reset (Hardware) / Standby
X
X
X
X
X
X
X
X
High-Z
L
X
Boot Block Sector Write Protection
X
X
X
X
X
X
X
X
X
X
L
3
Enable Sector Group Protection*2, *4
2, 4
Verify Sector Group Protection* *
Temporary Sector Group Unprotection*
Legend: L = VIL, H = VIH, X = VIL or VIH,
5
= Pulse input. See ■DC CHARACTERISTICS for voltage levels.
*1: Manufacturer and device codes are accessed via a command register write sequence. See “MBM29DL16XTE/
BE Command Definitions Table”.
*2: Refer to “Sector Group Protection” in ■FUNCTIONAL DESCRIPTION.
*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*4: VCC = +2.7 V to +3.6 V
*5: Also used for the extended sector group protection.
8
MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE Command Definitions Table
Command
Sequence
Read/Reset*1
Read/Reset*1
Word
Byte
Word
Byte
Bus
Write
Cycles
Req’d
1
XXXh
3
Word
Word
Byte
Program Suspend
Program Resume
Sector Erase
Word
Byte
Word
Byte
Erase Suspend
Erase Resume
Set to
Fast Mode
Fast
Program*2
Reset from
Fast Mode*2
Extended
Sector Group
Protection*3
Word
Byte
Word
Byte
Word
Byte
Word
Byte
4
1
1
6
6
1
1
3
Query *
555h
AAh
AAAh
2AAh
555h
55h
555h
2AAh
Word
HiddenROM
Program*5
Word
HiddenROM
Erase*5
Word
Byte
Byte
Byte
555h
AAAh
BA
BA
555h
AAAh
555h
AAAh
BA
BA
555h
AAAh
555h
AAh
B0h
30h
AAh
AAh
B0h
30h
AAh
2AAh
555h
—
—
2AAh
555h
2AAh
555h
—
—
2AAh
555h
55h
—
—
55h
55h
—
—
55h
—
—
—
—
—
—
F0h
RA*7
RD*7
—
—
—
—
90h
IA*7
ID*7
—
—
—
—
A0h
PA
PD
—
—
—
—
—
—
2AAh
555h
2AAh
555h
—
—
—
—
—
—
555h
AAAh
—
—
—
—
80h
80h
—
—
—
—
—
—
555h
AAh
AAAh
555h
AAh
AAAh
—
—
—
—
55h
10h
55h
SA
30h
—
—
—
—
—
—
20h
—
—
—
—
—
—
PA
PD
—
—
—
—
—
—
—
—
2
BA
90h
XXXh
*6
F0h
—
—
—
—
—
—
—
—
3
XXXh
60h
SPA
60h
SPA
—
—
—
—
—
—
—
3
4
6
Word
(BA)
55h
98h
(BA)
AAh
555h
AAh
AAAh
555h
AAh
AAAh
555h
AAh
AAAh
2AAh
555h
2AAh
555h
2AAh
555h
555h
2AAh
4
Byte
55h
555h
AAAh
(BA)
555h
(BA)
AAAh
555h
AAAh
—
—
555h
AAAh
555h
AAAh
—
—
555h
AAAh
—
A0h
1
HiddenROM
Entry
AAh
—
XXXh
Byte
HiddenROM
Exit*5
—
2
Word
4
F0h
AAAh
Byte
Chip Erase
—
3
Autoselect
Program
First Bus Second Bus Third Bus Fourth Bus
Fifth Bus
Sixth Bus
Write Cycle Write Cycle Write Cycle Read/Write
Write
Cycle
Write
Cycle
Cycle
Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data
AAh
AAAh
55h
55h
55h
—
—
—
—
—
—
—
88h
—
—
—
—
—
—
A0h
PA
(HRA)
PD
—
—
—
—
80h
555h
AAh
AAAh
2AAh
555h
55h
HRA
30h
90h
XXXh
—
—
—
—
(HRBA)
55h
555h
555h
AAAh
555h
AAAh
555h
AAAh
40h SPA*7 SD*7
555h
(HRBA)
00h
AAAh
9
MBM29DL16XTE/BE70/90
Notes: •
•
•
•
•
•
•
•
•
•
Address bits A19 to A11 = X = “H” or “L” for all address commands except or Program Address (PA), Sector
Address (SA), and Bank Address (BA).
Bus operations are defined in “MBM29DL16XTE/BE User Bus Operations Tables (BYTE = VIH and
BYTE = VIL)”.
RA:
Address of the memory location to be read
IA :
Autoselect read address that sets both the bank address specified at (A19, A18, A17, A16, A15) and
all the other A6, A1, A0, (A-1).
PA:
Address of the memory location to be programmed
Addresses are latched on the falling edge of the write pulse.
SA:
Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, A13, and A12 will
uniquely select any sector.
BA:
Bank Address (A19 to A15)
RD:
Data read from location RA during read operation.
ID :
Device code/manufacture code for the address located by IA.
PD:
Data to be programmed at location PA. Data is latched on the rising edge of write pulse.
SPA: Sector group address to be protected. Set sector group address (SGA) and (A6, A1, A0) = (0, 1, 0).
SD:
Sector group protection verify data. Output 01h at protected sector group addresses and output
00h at unprotected sector group addresses.
HRA: Address of the HiddenROM area
29DL16XTE (Top Boot Type)
Word Mode: 0F8000h to 0FFFFFh
Byte Mode: 1F0000h to 1FFFFFh
29DL16XBE (Bottom Boot Type) Word Mode: 000000h to 007FFFh
Byte Mode: 000000h to 00FFFFh
HRBA: Bank Address of the HiddenROM area
29DL16XTE (Top Boot Type)
:A19 = A18= A17 = A16 = A15 = VIH
29DL16XBE (Bottom Boot Type) :A19 = A18= A17 = A16 = A15 = VIL
The system should generate the following address patterns:
Word Mode: 555h or 2AAh to addresses A10 to A0
Byte Mode: AAAh or 555h to addresses A10 to A0 and A–1
Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
Command combinations not described in Command Definitions table are illegal.
*1: Both of these reset commands are equivalent.
*2: This command is valid during Fast Mode.
*3: This command is valid while RESET = VID (except during HiddenROM MODE).
*4: The valid addresses are A6 to A0.
*5: This command is valid during HiddenROM mode.
*6: The data “00h” is also acceptable.
*7: The fourth bus cycle is only for read.
10
MBM29DL16XTE/BE70/90
MBM29DL161TE/BE Sector Group Protection Verify Autoselect Codes Table
Type
A19 to A12
A6
A1
A0
BA*3
VIL
VIL
VIL
Byte
Manufacture’s Code
Word
Byte
MBM29DL161TE
VIL
BA*3
VIL
Byte
MBM29DL161BE
VIL
BA*3
VIL
Byte Sector Group
Word Addresses
VIL
VIL
04h
X
0004h
VIL
36h
X
2236h
VIL
39h
X
2239h
VIL
01h*2
X
0001h*2
VIH
Word
Sector Group Protection
Code (HEX)
VIH
Word
Device
Code
A-1*1
VIH
VIL
*1: A-1 is for Byte mode. At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
*2: Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*3: When VID is applied to A9, both Bank1 and Bank2 are put into Autoselect mode, which makes simultaneous
operation unable to be executed. Consequently, specifying the bank address is not required. However, the bank
address needs to be indicated when Autoselect mode is read out at command mode, because then it enables
to activate simultaneous operation.
Extended Autoselect Code Table
Type
Code DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
(B)*
04h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
0
0
0
1
0
0
0
0
0
0
0
1
0
0
36h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
1
1
0
1
1
0
0
0
1
1
0
1
1
0
39h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
1
1
1
0
0
1
0
0
1
1
1
0
0
1
01h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
0
0
0
0
0
1
0
0
0
0
0
0
1
Manufacturer’s Code
(W) 0004h
(B)*
0
0
0
0
0
0
0
0
MBM29DL161TE
(W) 2236h 0
Device
Code
(B)*
0
1
0
0
0
1
0
MBM29DL161BE
(W) 2239h 0
(B)*
0
1
0
0
0
1
0
Sector Group Protection
(W) 0001h
0
0
0
0
0
0
0
0
0
(B) : Byte mode
(W) : Word mode
HI-Z : High-Z
*: At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
11
MBM29DL16XTE/BE70/90
MBM29DL162TE/BE Sector Group Protection Verify Autoselect Codes Table
Type
A19 to A12
A6
A1
A0
BA*3
VIL
VIL
VIL
Byte
Manufacture’s Code
Word
Byte
MBM29DL162TE
VIL
BA*3
VIL
Byte
MBM29DL162BE
VIL
BA*3
VIL
Byte Sector Group
Word Addresses
VIL
VIL
04h
X
0004h
VIL
2Dh
X
222Dh
VIL
2Eh
X
222Eh
VIL
01h*2
X
0001h*2
VIH
Word
Sector Group Protection
Code (HEX)
VIH
Word
Device
Code
A-1*1
VIH
VIL
*1 : A-1 is for Byte mode. At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
*2 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*3 : When VID is applied to A9, both Bank 1 and Bank 2 are put into Autoselect mode, which makes simultaneous
operation unable to be executed. Consequently, specifying the bank address is not required. However, the bank
address needs to be indicated when Autoselect mode is read out at command mode, because then it enables
to activate simultaneous operation.
Extended Autoselect Code Table
Type
Code
(B)*
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
04h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
0
0
0
1
0
0
0
0
0
0
0
1
0
0
2Dh A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
1
0
1
1
0
1
0
0
1
0
1
1
0
1
2Eh A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
1
0
1
1
1
0
0
0
1
0
1
1
1
0
01h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
0
0
0
0
0
1
0
0
0
0
0
0
1
Manufacturer’s Code
(W) 0004h 0
(B)*
0
0
0
0
0
0
0
MBM29DL162TE
(W) 222Dh 0
Device
Code
(B)*
0
1
0
0
0
1
0
MBM29DL162BE
(W) 222Eh 0
(B)*
0
1
0
0
0
1
0
Sector Group Protection
(W) 0001h 0
0
0
0
0
0
0
0
(B) : Byte mode
(W) : Word mode
HI-Z : High-Z
* : At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
12
0
MBM29DL16XTE/BE70/90
MBM29DL163TE/BE Sector Group Protection Verify Autoselect Codes Table
Type
A19 to A12
A6
A1
A0
BA*3
VIL
VIL
VIL
Byte
Manufacture’s Code
Word
Byte
MBM29DL163TE
VIL
BA*3
VIL
Byte
MBM29DL163BE
VIL
BA*3
VIL
Byte Sector Group
Word Addresses
VIL
VIL
04h
X
0004h
VIL
28h
X
2228h
VIL
2Bh
X
222Bh
VIL
01h*2
X
0001h*2
VIH
Word
Sector Group Protection
Code (HEX)
VIH
Word
Device
Code
A-1*1
VIH
VIL
*1 : A-1 is for Byte mode. At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
*2 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*3 : When VID is applied to A9, both Bank 1 and Bank 2 are put into Autoselect mode, which makes simultaneous
operation unable to be executed. Consequently, specifying the bank address is not required. However, the bank
address needs to be indicated when Autoselect mode is read out at command mode, because then it enables
to activate simultaneous operation.
Extended Autoselect Code Table
Type
Code
(B)*
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
04h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
0
0
0
1
0
0
0
0
0
0
0
1
0
0
28h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
1
0
1
0
0
0
0
0
1
0
1
0
0
0
2Bh A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
1
0
1
0
1
1
0
0
1
0
1
0
1
1
A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
0
0
0
0
0
1
0
0
0
0
0
0
1
Manufacturer’s Code
(W) 0004h 0
(B)*
0
0
0
0
0
0
0
MBM29DL163TE
(W) 2228h 0
Device
Code
(B)*
0
1
0
0
0
1
0
MBM29DL163BE
(W) 222Bh 0
(B)* 01h
0
1
0
0
0
1
0
Sector Group Protection
(W) 0001h 0
0
0
0
0
0
0
0
0
(B) : Byte mode
(W) : Word mode
HI-Z : High-Z
* : At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
13
MBM29DL16XTE/BE70/90
MBM29DL164TE/BE Sector Group Protection Verify Autoselect Codes Table
Type
A19 to A12
A6
A1
A0
BA*3
VIL
VIL
VIL
Byte
Manufacture’s Code
Word
Byte
MBM29DL164TE
VIL
BA*3
VIL
Byte
MBM29DL164BE
VIL
BA*3
VIL
Byte Sector Group
Word Addresses
VIL
VIL
04h
X
0004h
VIL
33h
X
2233h
VIL
35h
X
2235h
VIL
01h*2
X
0001h*2
VIH
Word
Sector Group Protection
Code (HEX)
VIH
Word
Device
Code
A-1*1
VIH
VIL
*1 : A-1 is for Byte mode. At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
*2 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*3 : When VID is applied to A9, both Bank 1 and Bank 2 are put into Autoselect mode, which makes simultaneous
operation unable to be executed. Consequently, specifying the bank address is not required. However, the bank
address needs to be indicated when Autoselect mode is read out at command mode, because then it enables
to activate simultaneous operation.
Expanded Autoselect Code Table
Type
Code
(B)*
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
04h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
0
0
0
1
0
0
0
0
0
0
0
1
0
0
33h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
35h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
1
1
0
1
0
1
0
0
1
1
0
1
0
1
01h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0
0
0
0
0
0
0
1
0
0
0
0
0
0
1
Manufacturer’s Code
(W) 0004h 0
(B)*
0
0
0
0
0
0
0
MBM29DL164TE
(W) 2233h 0
Device
Code
(B)*
0
1
0
0
0
1
0
MBM29DL164BE
(W) 2235h 0
(B)*
0
1
0
0
0
1
0
Sector Group Protection
(W) 0001h 0
0
0
0
0
0
0
0
(B) : Byte mode
(W) : Word mode
HI-Z : High-Z
* : At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
14
0
MBM29DL16XTE/BE70/90
■ FLEXIBLE SECTOR-ERASE ARCHITECTURE
Sector Address Table (MBM29DL161TE)
Bank Sector
Bank 2
Bank 1
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
Sector Address
Sector
Size
(×8)
(×16)
Bank Address
(Kbytes/
Address Range
Address Range
A19 A18 A17 A16 A15 A14 A13 A12 Kwords)
0
0
0
0
0 X X X
64/32
000000h to 00FFFFh 000000h to 007FFFh
0
0
0
0
1 X X X
64/32
010000h to 01FFFFh 008000h to 00FFFFh
0
0
0
1
0 X X X
64/32
020000h to 02FFFFh 010000h to 017FFFh
0
0
0
1
1 X X X
64/32
030000h to 03FFFFh 018000h to 01FFFFh
0
0
1
0
0 X X X
64/32
040000h to 04FFFFh 020000h to 027FFFh
0
0
1
0
1 X X X
64/32
050000h to 05FFFFh 028000h to 02FFFFh
0
0
1
1
0 X X X
64/32
060000h to 06FFFFh 030000h to 037FFFh
0
0
1
1
1 X X X
64/32
070000h to 07FFFFh 038000h to 03FFFFh
0
1
0
0
0 X X X
64/32
080000h to 08FFFFh 040000h to 047FFFh
0
1
0
0
1 X X X
64/32
090000h to 09FFFFh 048000h to 04FFFFh
0
1
0
1
0 X X X
64/32
0A0000h to 0AFFFFh 050000h to 057FFFh
0
1
0
1
1 X X X
64/32
0B0000h to 0BFFFFh 058000h to 05FFFFh
0
1
1
0
0 X X X
64/32
0C0000h to 0CFFFFh 060000h to 067FFFh
0
1
1
0
1 X X X
64/32
0D0000h to 0DFFFFh 068000h to 06FFFFh
0
1
1
1
0 X X X
64/32
0E0000h to 0EFFFFh 070000h to 077FFFh
0
1
1
1
1 X X X
64/32
0F0000h to 0FFFFFh 078000h to 07FFFFh
1
0
0
0
0 X X X
64/32
100000h to 10FFFFh 080000h to 087FFFh
1
0
0
0
1 X X X
64/32
110000h to 11FFFFh 088000h to 08FFFFh
1
0
0
1
0 X X X
64/32
120000h to 12FFFFh 090000h to 097FFFh
1
0
0
1
1 X X X
64/32
130000h to 13FFFFh 098000h to 09FFFFh
1
0
1
0
0 X X X
64/32
140000h to 14FFFFh 0A0000h to 0A7FFFh
1
0
1
0
1 X X X
64/32
150000h to 15FFFFh 0A8000h to 0AFFFFh
1
0
1
1
0 X X X
64/32
160000h to 16FFFFh 0B0000h to 0B7FFFh
1
0
1
1
1 X X X
64/32
170000h to 17FFFFh 0B8000h to 0BFFFFh
1
1
0
0
0 X X X
64/32
180000h to 18FFFFh 0C0000h to 0C7FFFh
1
1
0
0
1 X X X
64/32
190000h to 19FFFFh 0C8000h to 0CFFFFh
1
1
0
1
0 X X X
64/32
1A0000h to 1AFFFFh 0D0000h to 0D7FFFh
1
1
0
1
1 X X X
64/32
1B0000h to 1BFFFFh 0D8000h to 0DFFFFh
1
1
1
0
0 X X X
64/32
1C0000h to 1CFFFFh 0E0000h to 0E7FFFh
1
1
1
0
1 X X X
64/32
1D0000h to 1DFFFFh 0E8000h to 0EFFFFh
1
1
1
1
0 X X X
64/32
1E0000h to 1EFFFFh 0F0000h to 0F7FFFh
1
1
1
1
1
0
0
0
8/4
1F0000h to 1F1FFFh 0F8000h to 0F8FFFh
1
1
1
1
1
0
0
1
8/4
1F2000h to 1F3FFFh 0F9000h to 0F9FFFh
1
1
1
1
1
0
1
0
8/4
1F4000h to 1F5FFFh 0FA000h to 0FAFFFh
1
1
1
1
1
0
1
1
8/4
1F6000h to 1F7FFFh 0FB000h to 0FBFFFh
1
1
1
1
1
1
0
0
8/4
1F8000h to 1F9FFFh 0FC000h to 0FCFFFh
1
1
1
1
1
1
0
1
8/4
1FA000h to 1FBFFFh 0FD000h to 0FDFFFh
1
1
1
1
1
1
1
0
8/4
1FC000h to 1FDFFFh 0FE000h to 0FEFFFh
1
1
1
1
1
1
1
1
8/4
1FE000h to 1FFFFFh 0FF000h to 0FFFFFh
Note: The address range is A19: A-1 if in byte mode (BYTE = VIL).
The address range is A19: A0 if in word mode (BYTE = VIH)
15
MBM29DL16XTE/BE70/90
Sector Address Table (MBM29DL161BE)
Bank Sector
Bank 2
Bank 1
SA38
SA37
SA36
SA35
SA34
SA33
SA32
SA31
SA30
SA29
SA28
SA27
SA26
SA25
SA24
SA23
SA22
SA21
SA20
SA19
SA18
SA17
SA16
SA15
SA14
SA13
SA12
SA11
SA10
SA9
SA8
SA7
SA6
SA5
SA4
SA3
SA2
SA1
SA0
Sector Address
Sector
Size
Bank Address
(Kbytes/
A19 A18 A17 A16 A15 A14 A13 A12 Kwords)
1
1
1
1
1 X X X
64/32
1
1
1
1
0 X X X
64/32
1
1
1
0
1 X X X
64/32
1
1
1
0
0 X X X
64/32
1
1
0
1
1 X X X
64/32
1
1
0
1
0 X X X
64/32
1
1
0
0
1 X X X
64/32
1
1
0
0
0 X X X
64/32
1
0
1
1
1 X X X
64/32
1
0
1
1
0 X X X
64/32
1
0
1
0
1 X X X
64/32
1
0
1
0
0 X X X
64/32
1
0
0
1
1 X X X
64/32
1
0
0
1
0 X X X
64/32
1
0
0
0 X X X X
64/32
1
0
0
0
0 X X X
64/32
0
1
1
1
1 X X X
64/32
0
1
1
1
0 X X X
64/32
0
1
1
0
1 X X X
64/32
0
1
1
0
0 X X X
64/32
0
1
0
1
1 X X X
64/32
0
1
0
1
0 X X X
64/32
0
1
0
0
1 X X X
64/32
0
1
0
0
0 X X X
64/32
0
0
1
1
1 X X X
64/32
0
0
1
1
0 X X X
64/32
0
0
1
0
1 X X X
64/32
0
0
1
0
0 X X X
64/32
0
0
0
1
1 X X X
64/32
0
0
0
1
0 X X X
64/32
0
0
0
0
1 X X X
64/32
0
0
0
0
0
1
1
1
8/4
0
0
0
0
0
1
1
0
8/4
0
0
0
0
0
1
0
1
8/4
0
0
0
0
0
1
0
0
8/4
0
0
0
0
0
0
1
1
8/4
0
0
0
0
0
0
1
0
8/4
0
0
0
0
0
0
0
1
8/4
0
0
0
0
0
0
0
0
8/4
Note: The address range is A19: A-1 if in byte mode (BYTE = VIL).
The address range is A19: A0 if in word mode (BYTE = VIH).
16
(×8)
Address Range
(×16)
Address Range
1F0000h to 1FFFFFh
1E0000h to 1EFFFFh
1D0000h to 1DFFFFh
1C0000h to 1CFFFFh
1B0000h to 1BFFFFh
1A0000h to 1AFFFFh
190000h to 19FFFFh
180000h to 18FFFFh
170000h to 17FFFFh
160000h to 16FFFFh
150000h to 15FFFFh
140000h to 14FFFFh
130000h to 13FFFFh
120000h to 12FFFFh
110000h to 11FFFFh
100000h to 10FFFFh
0F0000h to 0FFFFFh
0E0000h to 0EFFFFh
0D0000h to 0DFFFFh
0C0000h to 0CFFFFh
0B0000h to 0BFFFFh
0A0000h to 0AFFFFh
090000h to 09FFFFh
080000h to 08FFFFh
070000h to 07FFFFh
060000h to 06FFFFh
050000h to 05FFFFh
040000h to 04FFFFh
030000h to 03FFFFh
020000h to 02FFFFh
010000h to 01FFFFh
00E000h to 00FFFFh
00C000h to 00DFFFh
00A000h to 00BFFFh
008000h to 009FFFh
006000h to 007FFFh
004000h to 005FFFh
002000h to 003FFFh
000000h to 001FFFh
0F8000h to 0FFFFFh
0F0000h to 0F7FFFh
0E8000h to 0EFFFFh
0E0000h to 0E7FFFh
0D8000h to 0DFFFFh
0D0000h to 0D7FFFh
0C8000h to 0CFFFFh
0C0000h to 0C7FFFh
0B8000h to 0BFFFFh
0B0000h to 0B7FFFh
0A8000h to 0AFFFFh
0A0000h to 0A7FFFh
098000h to 09FFFFh
090000h to 097FFFh
088000h to 08FFFFh
080000h to 087FFFh
078000h to 07FFFFh
070000h to 077FFFh
068000h to 06FFFFh
060000h to 067FFFh
058000h to 05FFFFh
050000h to 057FFFh
048000h to 04FFFFh
040000h to 047FFFh
038000h to 03FFFFh
030000h to 037FFFh
028000h to 02FFFFh
020000h to 027FFFh
018000h to 01FFFFh
010000h to 017FFFh
008000h to 00FFFFh
007000h to 007FFFh
006000h to 006FFFh
005000h to 005FFFh
004000h to 004FFFh
003000h to 003FFFh
002000h to 002FFFh
001000h to 001FFFh
000000h to 000FFFh
MBM29DL16XTE/BE70/90
Sector Address Table (MBM29DL162TE)
Bank Sector
Bank 2
Bank 1
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
Sector Address
Sector
Size
(×8)
(×16)
Bank Address
(Kbytes/
Address Range
Address Range
A19 A18 A17 A16 A15 A14 A13 A12 Kwords)
0
0
0
0
0 X X X
64/32
000000h to 00FFFFh 000000h to 007FFFh
0
0
0
0
1 X X X
64/32
010000h to 01FFFFh 008000h to 00FFFFh
0
0
0
1
0 X X X
64/32
020000h to 02FFFFh 010000h to 017FFFh
0
0
0
1
1 X X X
64/32
030000h to 03FFFFh 018000h to 01FFFFh
0
0
1
0
0 X X X
64/32
040000h to 04FFFFh 020000h to 027FFFh
0
0
1
0
1 X X X
64/32
050000h to 05FFFFh 028000h to 02FFFFh
0
0
1
1
0 X X X
64/32
060000h to 06FFFFh 030000h to 037FFFh
0
0
1
1
1 X X X
64/32
070000h to 07FFFFh 038000h to 03FFFFh
0
1
0
0
0 X X X
64/32
080000h to 08FFFFh 040000h to 047FFFh
0
1
0
0
1 X X X
64/32
090000h to 09FFFFh 048000h to 04FFFFh
0
1
0
1
0 X X X
64/32
0A0000h to 0AFFFFh 050000h to 057FFFh
0
1
0
1
1 X X X
64/32
0B0000h to 0BFFFFh 058000h to 05FFFFh
0
1
1
0
0 X X X
64/32
0C0000h to 0CFFFFh 060000h to 067FFFh
0
1
1
0
1 X X X
64/32
0D0000h to 0DFFFFh 068000h to 06FFFFh
0
1
1
1
0 X X X
64/32
0E0000h to 0EFFFFh 070000h to 077FFFh
0
1
1
1
1 X X X
64/32
0F0000h to 0FFFFFh 078000h to 07FFFFh
1
0
0
0
0 X X X
64/32
100000h to 10FFFFh 080000h to 087FFFh
1
0
0
0
1 X X X
64/32
110000h to 11FFFFh 088000h to 08FFFFh
1
0
0
1
0 X X X
64/32
120000h to 12FFFFh 090000h to 097FFFh
1
0
0
1
1 X X X
64/32
130000h to 13FFFFh 098000h to 09FFFFh
1
0
1
0
0 X X X
64/32
140000h to 14FFFFh 0A0000h to 0A7FFFh
1
0
1
0
1 X X X
64/32
150000h to 15FFFFh 0A8000h to 0AFFFFh
1
0
1
1
0 X X X
64/32
160000h to 16FFFFh 0B0000h to 0B7FFFh
1
0
1
1
1 X X X
64/32
170000h to 17FFFFh 0B8000h to 0BFFFFh
1
1
0
0
0 X X X
64/32
180000h to 18FFFFh 0C0000h to 0C7FFFh
1
1
0
0
1 X X X
64/32
190000h to 19FFFFh 0C8000h to 0CFFFFh
1
1
0
1
0 X X X
64/32
1A0000h to 1AFFFFh 0D0000h to 0D7FFFh
1
1
0
1
1 X X X
64/32
1B0000h to 1BFFFFh 0D8000h to 0DFFFFh
1
1
1
0
0 X X X
64/32
1C0000h to 1CFFFFh 0E0000h to 0E7FFFh
1
1
1
0
1 X X X
64/32
1D0000h to 1DFFFFh 0E8000h to 0EFFFFh
1
1
1
1
0 X X X
64/32
1E0000h to 1EFFFFh 0F0000h to 0F7FFFh
1
1
1
1
1
0
0
0
8/4
1F0000h to 1F1FFFh 0F8000h to 0F8FFFh
1
1
1
1
1
0
0
1
8/4
1F2000h to 1F3FFFh 0F9000h to 0F9FFFh
1
1
1
1
1
0
1
0
8/4
1F4000h to 1F5FFFh 0FA000h to 0FAFFFh
1
1
1
1
1
0
1
1
8/4
1F6000h to 1F7FFFh 0FB000h to 0FBFFFh
1
1
1
1
1
1
0
0
8/4
1F8000h to 1F9FFFh 0FC000h to 0FCFFFh
1
1
1
1
1
1
0
1
8/4
1FA000h to 1FBFFFh 0FD000h to 0FDFFFh
1
1
1
1
1
1
1
0
8/4
1FC000h to 1FDFFFh 0FE000h to 0FEFFFh
1
1
1
1
1
1
1
1
8/4
1FE000h to 1FFFFFh 0FF000h to 0FFFFFh
Note: The address range is A19: A-1 if in byte mode (BYTE = VIL).
The address range is A19: A0 if in word mode (BYTE = VIH)
17
MBM29DL16XTE/BE70/90
Sector Address Table (MBM29DL162BE)
Bank Sector
Bank 2
Bank 1
SA38
SA37
SA36
SA35
SA34
SA33
SA32
SA31
SA30
SA29
SA28
SA27
SA26
SA25
SA24
SA23
SA22
SA21
SA20
SA19
SA18
SA17
SA16
SA15
SA14
SA13
SA12
SA11
SA10
SA9
SA8
SA7
SA6
SA5
SA4
SA3
SA2
SA1
SA0
Sector Address
Sector
Size
Bank Address
(Kbytes/
A19 A18 A17 A16 A15 A14 A13 A12 Kwords)
1
1
1
1
1 X X X
64/32
1
1
1
1
0 X X X
64/32
1
1
1
0
1 X X X
64/32
1
1
1
0
0 X X X
64/32
1
1
0
1
1 X X X
64/32
1
1
0
1
0 X X X
64/32
1
1
0
0
1 X X X
64/32
1
1
0
0
0 X X X
64/32
1
0
1
1
1 X X X
64/32
1
0
1
1
0 X X X
64/32
1
0
1
0
1 X X X
64/32
1
0
1
0
0 X X X
64/32
1
0
0
1
1 X X X
64/32
1
0
0
1
0 X X X
64/32
1
0
0
0 X X X X
64/32
1
0
0
0
0 X X X
64/32
0
1
1
1
1 X X X
64/32
0
1
1
1
0 X X X
64/32
0
1
1
0
1 X X X
64/32
0
1
1
0
0 X X X
64/32
0
1
0
1
1 X X X
64/32
0
1
0
1
0 X X X
64/32
0
1
0
0
1 X X X
64/32
0
1
0
0
0 X X X
64/32
0
0
1
1
1 X X X
64/32
0
0
1
1
0 X X X
64/32
0
0
1
0
1 X X X
64/32
0
0
1
0
0 X X X
64/32
0
0
0
1
1 X X X
64/32
0
0
0
1
0 X X X
64/32
0
0
0
0
1 X X X
64/32
0
0
0
0
0
1
1
1
8/4
0
0
0
0
0
1
1
0
8/4
0
0
0
0
0
1
0
1
8/4
0
0
0
0
0
1
0
0
8/4
0
0
0
0
0
0
1
1
8/4
0
0
0
0
0
0
1
0
8/4
0
0
0
0
0
0
0
1
8/4
0
0
0
0
0
0
0
0
8/4
Note: The address range is A19: A-1 if in byte mode (BYTE = VIL).
The address range is A19: A0 if in word mode (BYTE = VIH).
18
(×8)
Address Range
(×16)
Address Range
1F0000h to 1FFFFFh
1E0000h to 1EFFFFh
1D0000h to 1DFFFFh
1C0000h to 1CFFFFh
1B0000h to 1BFFFFh
1A0000h to 1AFFFFh
190000h to 19FFFFh
180000h to 18FFFFh
170000h to 17FFFFh
160000h to 16FFFFh
150000h to 15FFFFh
140000h to 14FFFFh
130000h to 13FFFFh
120000h to 12FFFFh
110000h to 11FFFFh
100000h to 10FFFFh
0F0000h to 0FFFFFh
0E0000h to 0EFFFFh
0D0000h to 0DFFFFh
0C0000h to 0CFFFFh
0B0000h to 0BFFFFh
0A0000h to 0AFFFFh
090000h to 09FFFFh
080000h to 08FFFFh
070000h to 07FFFFh
060000h to 06FFFFh
050000h to 05FFFFh
040000h to 04FFFFh
030000h to 03FFFFh
020000h to 02FFFFh
010000h to 01FFFFh
00E000h to 00FFFFh
00C000h to 00DFFFh
00A000h to 00BFFFh
008000h to 009FFFh
006000h to 007FFFh
004000h to 005FFFh
002000h to 003FFFh
000000h to 001FFFh
0F8000h to 0FFFFFh
0F0000h to 0F7FFFh
0E8000h to 0EFFFFh
0E0000h to 0E7FFFh
0D8000h to 0DFFFFh
0D0000h to 0D7FFFh
0C8000h to 0CFFFFh
0C0000h to 0C7FFFh
0B8000h to 0BFFFFh
0B0000h to 0B7FFFh
0A8000h to 0AFFFFh
0A0000h to 0A7FFFh
098000h to 09FFFFh
090000h to 097FFFh
088000h to 08FFFFh
080000h to 087FFFh
078000h to 07FFFFh
070000h to 077FFFh
068000h to 06FFFFh
060000h to 067FFFh
058000h to 05FFFFh
050000h to 057FFFh
048000h to 04FFFFh
040000h to 047FFFh
038000h to 03FFFFh
030000h to 037FFFh
028000h to 02FFFFh
020000h to 027FFFh
018000h to 01FFFFh
010000h to 017FFFh
008000h to 00FFFFh
007000h to 007FFFh
006000h to 006FFFh
005000h to 005FFFh
004000h to 004FFFh
003000h to 003FFFh
002000h to 002FFFh
001000h to 001FFFh
000000h to 000FFFh
MBM29DL16XTE/BE70/90
Sector Address Table (MBM29DL163TE)
Bank Sector
Bank 2
Bank 1
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
Sector Address
Sector
Size
(×8)
(×16)
Bank Address
(Kbytes/
Address Range
Address Range
A19 A18 A17 A16 A15 A14 A13 A12 Kwords)
0
0
0
0
0 X X X
64/32
000000h to 00FFFFh 000000h to 007FFFh
0
0
0
0
1 X X X
64/32
010000h to 01FFFFh 008000h to 00FFFFh
0
0
0
1
0 X X X
64/32
020000h to 02FFFFh 010000h to 017FFFh
0
0
0
1
1 X X X
64/32
030000h to 03FFFFh 018000h to 01FFFFh
0
0
1
0
0 X X X
64/32
040000h to 04FFFFh 020000h to 027FFFh
0
0
1
0
1 X X X
64/32
050000h to 05FFFFh 028000h to 02FFFFh
0
0
1
1
0 X X X
64/32
060000h to 06FFFFh 030000h to 037FFFh
0
0
1
1
1 X X X
64/32
070000h to 07FFFFh 038000h to 03FFFFh
0
1
0
0
0 X X X
64/32
080000h to 08FFFFh 040000h to 047FFFh
0
1
0
0
1 X X X
64/32
090000h to 09FFFFh 048000h to 04FFFFh
0
1
0
1
0 X X X
64/32
0A0000h to 0AFFFFh 050000h to 057FFFh
0
1
0
1
1 X X X
64/32
0B0000h to 0BFFFFh 058000h to 05FFFFh
0
1
1
0
0 X X X
64/32
0C0000h to 0CFFFFh 060000h to 067FFFh
0
1
1
0
1 X X X
64/32
0D0000h to 0DFFFFh 068000h to 06FFFFh
0
1
1
1
0 X X X
64/32
0E0000h to 0EFFFFh 070000h to 077FFFh
0
1
1
1
1 X X X
64/32
0F0000h to 0FFFFFh 078000h to 07FFFFh
1
0
0
0
0 X X X
64/32
100000h to 10FFFFh 080000h to 087FFFh
1
0
0
0
1 X X X
64/32
110000h to 11FFFFh 088000h to 08FFFFh
1
0
0
1
0 X X X
64/32
120000h to 12FFFFh 090000h to 097FFFh
1
0
0
1
1 X X X
64/32
130000h to 13FFFFh 098000h to 09FFFFh
1
0
1
0
0 X X X
64/32
140000h to 14FFFFh 0A0000h to 0A7FFFh
1
0
1
0
1 X X X
64/32
150000h to 15FFFFh 0A8000h to 0AFFFFh
1
0
1
1
0 X X X
64/32
160000h to 16FFFFh 0B0000h to 0B7FFFh
1
0
1
1
1 X X X
64/32
170000h to 17FFFFh 0B8000h to 0BFFFFh
1
1
0
0
0 X X X
64/32
180000h to 18FFFFh 0C0000h to 0C7FFFh
1
1
0
0
1 X X X
64/32
190000h to 19FFFFh 0C8000h to 0CFFFFh
1
1
0
1
0 X X X
64/32
1A0000h to 1AFFFFh 0D0000h to 0D7FFFh
1
1
0
1
1 X X X
64/32
1B0000h to 1BFFFFh 0D8000h to 0DFFFFh
1
1
1
0
0 X X X
64/32
1C0000h to 1CFFFFh 0E0000h to 0E7FFFh
1
1
1
0
1 X X X
64/32
1D0000h to 1DFFFFh 0E8000h to 0EFFFFh
1
1
1
1
0 X X X
64/32
1E0000h to 1EFFFFh 0F0000h to 0F7FFFh
1
1
1
1
1
0
0
0
8/4
1F0000h to 1F1FFFh 0F8000h to 0F8FFFh
1
1
1
1
1
0
0
1
8/4
1F2000h to 1F3FFFh 0F9000h to 0F9FFFh
1
1
1
1
1
0
1
0
8/4
1F4000h to 1F5FFFh 0FA000h to 0FAFFFh
1
1
1
1
1
0
1
1
8/4
1F6000h to 1F7FFFh 0FB000h to 0FBFFFh
1
1
1
1
1
1
0
0
8/4
1F8000h to 1F9FFFh 0FC000h to 0FCFFFh
1
1
1
1
1
1
0
1
8/4
1FA000h to 1FBFFFh 0FD000h to 0FDFFFh
1
1
1
1
1
1
1
0
8/4
1FC000h to 1FDFFFh 0FE000h to 0FEFFFh
1
1
1
1
1
1
1
1
8/4
1FE000h to 1FFFFFh 0FF000h to 0FFFFFh
Note: The address range is A19: A-1 if in byte mode (BYTE = VIL).
The address range is A19: A0 if in word mode (BYTE = VIH)
19
MBM29DL16XTE/BE70/90
Sector Address Table (MBM29DL163BE)
Bank Sector
Bank 2
Bank 1
SA38
SA37
SA36
SA35
SA34
SA33
SA32
SA31
SA30
SA29
SA28
SA27
SA26
SA25
SA24
SA23
SA22
SA21
SA20
SA19
SA18
SA17
SA16
SA15
SA14
SA13
SA12
SA11
SA10
SA9
SA8
SA7
SA6
SA5
SA4
SA3
SA2
SA1
SA0
Sector Address
Sector
Size
Bank Address
(Kbytes/
A19 A18 A17 A16 A15 A14 A13 A12 Kwords)
1
1
1
1
1 X X X
64/32
1
1
1
1
0 X X X
64/32
1
1
1
0
1 X X X
64/32
1
1
1
0
0 X X X
64/32
1
1
0
1
1 X X X
64/32
1
1
0
1
0 X X X
64/32
1
1
0
0
1 X X X
64/32
1
1
0
0
0 X X X
64/32
1
0
1
1
1 X X X
64/32
1
0
1
1
0 X X X
64/32
1
0
1
0
1 X X X
64/32
1
0
1
0
0 X X X
64/32
1
0
0
1
1 X X X
64/32
1
0
0
1
0 X X X
64/32
1
0
0
0 X X X X
64/32
1
0
0
0
0 X X X
64/32
0
1
1
1
1 X X X
64/32
0
1
1
1
0 X X X
64/32
0
1
1
0
1 X X X
64/32
0
1
1
0
0 X X X
64/32
0
1
0
1
1 X X X
64/32
0
1
0
1
0 X X X
64/32
0
1
0
0
1 X X X
64/32
0
1
0
0
0 X X X
64/32
0
0
1
1
1 X X X
64/32
0
0
1
1
0 X X X
64/32
0
0
1
0
1 X X X
64/32
0
0
1
0
0 X X X
64/32
0
0
0
1
1 X X X
64/32
0
0
0
1
0 X X X
64/32
0
0
0
0
1 X X X
64/32
0
0
0
0
0
1
1
1
8/4
0
0
0
0
0
1
1
0
8/4
0
0
0
0
0
1
0
1
8/4
0
0
0
0
0
1
0
0
8/4
0
0
0
0
0
0
1
1
8/4
0
0
0
0
0
0
1
0
8/4
0
0
0
0
0
0
0
1
8/4
0
0
0
0
0
0
0
0
8/4
Note: The address range is A19: A-1 if in byte mode (BYTE = VIL).
The address range is A19: A0 if in word mode (BYTE = VIH).
20
(×8)
Address Range
(×16)
Address Range
1F0000h to 1FFFFFh
1E0000h to 1EFFFFh
1D0000h to 1DFFFFh
1C0000h to 1CFFFFh
1B0000h to 1BFFFFh
1A0000h to 1AFFFFh
190000h to 19FFFFh
180000h to 18FFFFh
170000h to 17FFFFh
160000h to 16FFFFh
150000h to 15FFFFh
140000h to 14FFFFh
130000h to 13FFFFh
120000h to 12FFFFh
110000h to 11FFFFh
100000h to 10FFFFh
0F0000h to 0FFFFFh
0E0000h to 0EFFFFh
0D0000h to 0DFFFFh
0C0000h to 0CFFFFh
0B0000h to 0BFFFFh
0A0000h to 0AFFFFh
090000h to 09FFFFh
080000h to 08FFFFh
070000h to 07FFFFh
060000h to 06FFFFh
050000h to 05FFFFh
040000h to 04FFFFh
030000h to 03FFFFh
020000h to 02FFFFh
010000h to 01FFFFh
00E000h to 00FFFFh
00C000h to 00DFFFh
00A000h to 00BFFFh
008000h to 009FFFh
006000h to 007FFFh
004000h to 005FFFh
002000h to 003FFFh
000000h to 001FFFh
0F8000h to 0FFFFFh
0F0000h to 0F7FFFh
0E8000h to 0EFFFFh
0E0000h to 0E7FFFh
0D8000h to 0DFFFFh
0D0000h to 0D7FFFh
0C8000h to 0CFFFFh
0C0000h to 0C7FFFh
0B8000h to 0BFFFFh
0B0000h to 0B7FFFh
0A8000h to 0AFFFFh
0A0000h to 0A7FFFh
098000h to 09FFFFh
090000h to 097FFFh
088000h to 08FFFFh
080000h to 087FFFh
078000h to 07FFFFh
070000h to 077FFFh
068000h to 06FFFFh
060000h to 067FFFh
058000h to 05FFFFh
050000h to 057FFFh
048000h to 04FFFFh
040000h to 047FFFh
038000h to 03FFFFh
030000h to 037FFFh
028000h to 02FFFFh
020000h to 027FFFh
018000h to 01FFFFh
010000h to 017FFFh
008000h to 00FFFFh
007000h to 007FFFh
006000h to 006FFFh
005000h to 005FFFh
004000h to 004FFFh
003000h to 003FFFh
002000h to 002FFFh
001000h to 001FFFh
000000h to 000FFFh
MBM29DL16XTE/BE70/90
Sector Address Table (MBM29DL164TE)
Bank Sector
Bank 2
Bank 1
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
Sector Address
Sector
Size
(×8)
(×16)
Bank Address
(Kbytes/
Address Range
Address Range
A19 A18 A17 A16 A15 A14 A13 A12 Kwords)
0
0
0
0
0 X X X
64/32
000000h to 00FFFFh 000000h to 007FFFh
0
0
0
0
1 X X X
64/32
010000h to 01FFFFh 008000h to 00FFFFh
0
0
0
1
0 X X X
64/32
020000h to 02FFFFh 010000h to 017FFFh
0
0
0
1
1 X X X
64/32
030000h to 03FFFFh 018000h to 01FFFFh
0
0
1
0
0 X X X
64/32
040000h to 04FFFFh 020000h to 027FFFh
0
0
1
0
1 X X X
64/32
050000h to 05FFFFh 028000h to 02FFFFh
0
0
1
1
0 X X X
64/32
060000h to 06FFFFh 030000h to 037FFFh
0
0
1
1
1 X X X
64/32
070000h to 07FFFFh 038000h to 03FFFFh
0
1
0
0
0 X X X
64/32
080000h to 08FFFFh 040000h to 047FFFh
0
1
0
0
1 X X X
64/32
090000h to 09FFFFh 048000h to 04FFFFh
0
1
0
1
0 X X X
64/32
0A0000h to 0AFFFFh 050000h to 057FFFh
0
1
0
1
1 X X X
64/32
0B0000h to 0BFFFFh 058000h to 05FFFFh
0
1
1
0
0 X X X
64/32
0C0000h to 0CFFFFh 060000h to 067FFFh
0
1
1
0
1 X X X
64/32
0D0000h to 0DFFFFh 068000h to 06FFFFh
0
1
1
1
0 X X X
64/32
0E0000h to 0EFFFFh 070000h to 077FFFh
0
1
1
1
1 X X X
64/32
0F0000h to 0FFFFFh 078000h to 07FFFFh
1
0
0
0
0 X X X
64/32
100000h to 10FFFFh 080000h to 087FFFh
1
0
0
0
1 X X X
64/32
110000h to 11FFFFh 088000h to 08FFFFh
1
0
0
1
0 X X X
64/32
120000h to 12FFFFh 090000h to 097FFFh
1
0
0
1
1 X X X
64/32
130000h to 13FFFFh 098000h to 09FFFFh
1
0
1
0
0 X X X
64/32
140000h to 14FFFFh 0A0000h to 0A7FFFh
1
0
1
0
1 X X X
64/32
150000h to 15FFFFh 0A8000h to 0AFFFFh
1
0
1
1
0 X X X
64/32
160000h to 16FFFFh 0B0000h to 0B7FFFh
1
0
1
1
1 X X X
64/32
170000h to 17FFFFh 0B8000h to 0BFFFFh
1
1
0
0
0 X X X
64/32
180000h to 18FFFFh 0C0000h to 0C7FFFh
1
1
0
0
1 X X X
64/32
190000h to 19FFFFh 0C8000h to 0CFFFFh
1
1
0
1
0 X X X
64/32
1A0000h to 1AFFFFh 0D0000h to 0D7FFFh
1
1
0
1
1 X X X
64/32
1B0000h to 1BFFFFh 0D8000h to 0DFFFFh
1
1
1
0
0 X X X
64/32
1C0000h to 1CFFFFh 0E0000h to 0E7FFFh
1
1
1
0
1 X X X
64/32
1D0000h to 1DFFFFh 0E8000h to 0EFFFFh
1
1
1
1
0 X X X
64/32
1E0000h to 1EFFFFh 0F0000h to 0F7FFFh
1
1
1
1
1
0
0
0
8/4
1F0000h to 1F1FFFh 0F8000h to 0F8FFFh
1
1
1
1
1
0
0
1
8/4
1F2000h to 1F3FFFh 0F9000h to 0F9FFFh
1
1
1
1
1
0
1
0
8/4
1F4000h to 1F5FFFh 0FA000h to 0FAFFFh
1
1
1
1
1
0
1
1
8/4
1F6000h to 1F7FFFh 0FB000h to 0FBFFFh
1
1
1
1
1
1
0
0
8/4
1F8000h to 1F9FFFh 0FC000h to 0FCFFFh
1
1
1
1
1
1
0
1
8/4
1FA000h to 1FBFFFh 0FD000h to 0FDFFFh
1
1
1
1
1
1
1
0
8/4
1FC000h to 1FDFFFh 0FE000h to 0FEFFFh
1
1
1
1
1
1
1
1
8/4
1FE000h to 1FFFFFh 0FF000h to 0FFFFFh
Note: The address range is A19: A-1 if in byte mode (BYTE = VIL).
The address range is A19: A0 if in word mode (BYTE = VIH)
21
MBM29DL16XTE/BE70/90
Sector Address Table (MBM29DL164BE)
Bank Sector
Bank 2
Bank 1
SA38
SA37
SA36
SA35
SA34
SA33
SA32
SA31
SA30
SA29
SA28
SA27
SA26
SA25
SA24
SA23
SA22
SA21
SA20
SA19
SA18
SA17
SA16
SA15
SA14
SA13
SA12
SA11
SA10
SA9
SA8
SA7
SA6
SA5
SA4
SA3
SA2
SA1
SA0
Sector Address
Sector
Size
Bank Address
(Kbytes/
A19 A18 A17 A16 A15 A14 A13 A12 Kwords)
1
1
1
1
1 X X X
64/32
1
1
1
1
0 X X X
64/32
1
1
1
0
1 X X X
64/32
1
1
1
0
0 X X X
64/32
1
1
0
1
1 X X X
64/32
1
1
0
1
0 X X X
64/32
1
1
0
0
1 X X X
64/32
1
1
0
0
0 X X X
64/32
1
0
1
1
1 X X X
64/32
1
0
1
1
0 X X X
64/32
1
0
1
0
1 X X X
64/32
1
0
1
0
0 X X X
64/32
1
0
0
1
1 X X X
64/32
1
0
0
1
0 X X X
64/32
1
0
0
0 X X X X
64/32
1
0
0
0
0 X X X
64/32
0
1
1
1
1 X X X
64/32
0
1
1
1
0 X X X
64/32
0
1
1
0
1 X X X
64/32
0
1
1
0
0 X X X
64/32
0
1
0
1
1 X X X
64/32
0
1
0
1
0 X X X
64/32
0
1
0
0
1 X X X
64/32
0
1
0
0
0 X X X
64/32
0
0
1
1
1 X X X
64/32
0
0
1
1
0 X X X
64/32
0
0
1
0
1 X X X
64/32
0
0
1
0
0 X X X
64/32
0
0
0
1
1 X X X
64/32
0
0
0
1
0 X X X
64/32
0
0
0
0
1 X X X
64/32
0
0
0
0
0
1
1
1
8/4
0
0
0
0
0
1
1
0
8/4
0
0
0
0
0
1
0
1
8/4
0
0
0
0
0
1
0
0
8/4
0
0
0
0
0
0
1
1
8/4
0
0
0
0
0
0
1
0
8/4
0
0
0
0
0
0
0
1
8/4
0
0
0
0
0
0
0
0
8/4
Note: The address range is A19: A-1 if in byte mode (BYTE = VIL).
The address range is A19: A0 if in word mode (BYTE = VIH).
22
(×8)
Address Range
(×16)
Address Range
1F0000h to 1FFFFFh
1E0000h to 1EFFFFh
1D0000h to 1DFFFFh
1C0000h to 1CFFFFh
1B0000h to 1BFFFFh
1A0000h to 1AFFFFh
190000h to 19FFFFh
180000h to 18FFFFh
170000h to 17FFFFh
160000h to 16FFFFh
150000h to 15FFFFh
140000h to 14FFFFh
130000h to 13FFFFh
120000h to 12FFFFh
110000h to 11FFFFh
100000h to 10FFFFh
0F0000h to 0FFFFFh
0E0000h to 0EFFFFh
0D0000h to 0DFFFFh
0C0000h to 0CFFFFh
0B0000h to 0BFFFFh
0A0000h to 0AFFFFh
090000h to 09FFFFh
080000h to 08FFFFh
070000h to 07FFFFh
060000h to 06FFFFh
050000h to 05FFFFh
040000h to 04FFFFh
030000h to 03FFFFh
020000h to 02FFFFh
010000h to 01FFFFh
00E000h to 00FFFFh
00C000h to 00DFFFh
00A000h to 00BFFFh
008000h to 009FFFh
006000h to 007FFFh
004000h to 005FFFh
002000h to 003FFFh
000000h to 001FFFh
0F8000h to 0FFFFFh
0F0000h to 0F7FFFh
0E8000h to 0EFFFFh
0E0000h to 0E7FFFh
0D8000h to 0DFFFFh
0D0000h to 0D7FFFh
0C8000h to 0CFFFFh
0C0000h to 0C7FFFh
0B8000h to 0BFFFFh
0B0000h to 0B7FFFh
0A8000h to 0AFFFFh
0A0000h to 0A7FFFh
098000h to 09FFFFh
090000h to 097FFFh
088000h to 08FFFFh
080000h to 087FFFh
078000h to 07FFFFh
070000h to 077FFFh
068000h to 06FFFFh
060000h to 067FFFh
058000h to 05FFFFh
050000h to 057FFFh
048000h to 04FFFFh
040000h to 047FFFh
038000h to 03FFFFh
030000h to 037FFFh
028000h to 02FFFFh
020000h to 027FFFh
018000h to 01FFFFh
010000h to 017FFFh
008000h to 00FFFFh
007000h to 007FFFh
006000h to 006FFFh
005000h to 005FFFh
004000h to 004FFFh
003000h to 003FFFh
002000h to 002FFFh
001000h to 001FFFh
000000h to 000FFFh
MBM29DL16XTE/BE70/90
Sector Group Addresses Table (MBM29DL16XTE)
(Top Boot Block)
Sector Group
A19
A18
A17
A16
A15
A14
A13
A12
Sectors
SGA0
0
0
0
0
0
X
X
X
SA0
0
0
0
0
1
X
X
X
0
0
0
1
0
X
X
X
0
0
0
1
1
X
X
X
SGA2
0
0
1
X
X
X
X
X
SA4 to SA7
SGA3
0
1
0
X
X
X
X
X
SA8 to SA11
SGA4
0
1
1
X
X
X
X
X
SA12 to SA15
SGA5
1
0
0
X
X
X
X
X
SA16 to SA19
SGA6
1
0
1
X
X
X
X
X
SA20 to SA23
SGA7
1
1
0
X
X
X
X
X
SA24 to SA27
1
1
1
0
0
X
X
X
1
1
1
0
1
X
X
X
1
1
1
1
0
X
X
X
SGA9
1
1
1
1
1
0
0
0
SA31
SGA10
1
1
1
1
1
0
0
1
SA32
SGA11
1
1
1
1
1
0
1
0
SA33
SGA12
1
1
1
1
1
0
1
1
SA34
SGA13
1
1
1
1
1
1
0
0
SA35
SGA14
1
1
1
1
1
1
0
1
SA36
SGA15
1
1
1
1
1
1
1
0
SA37
SGA16
1
1
1
1
1
1
1
1
SA38
SGA1
SGA8
SA1 to SA3
SA28 to SA30
23
MBM29DL16XTE/BE70/90
Sector Group Addresses Table (MBM29DL16XBE)
(Bottom Boot Block)
Sector Group
A19
A18
A17
A16
A15
A14
A13
A12
Sectors
SGA0
0
0
0
0
0
0
0
0
SA0
SGA1
0
0
0
0
0
0
0
1
SA1
SGA2
0
0
0
0
0
0
1
0
SA2
SGA3
0
0
0
0
0
0
1
1
SA3
SGA4
0
0
0
0
0
1
0
0
SA4
SGA5
0
0
0
0
0
1
0
1
SA5
SGA6
0
0
0
0
0
1
1
0
SA6
SGA7
0
0
0
0
0
1
1
1
SA7
0
0
0
0
1
X
X
X
0
0
0
1
0
X
X
X
0
0
0
1
1
X
X
X
SGA9
0
0
1
X
X
X
X
X
SA11 to SA14
SGA10
0
1
0
X
X
X
X
X
SA15 to SA18
SGA11
0
1
1
X
X
X
X
X
SA19 to SA22
SGA12
1
0
0
X
X
X
X
X
SA23 to SA26
SGA13
1
0
1
X
X
X
X
X
SA27 to SA30
SGA14
1
1
0
X
X
X
X
X
SA31 to SA34
1
1
1
0
0
X
X
X
1
1
1
0
1
X
X
X
1
1
1
1
0
X
X
X
1
1
1
1
1
X
X
X
SGA8
SGA15
SGA16
24
SA8 to SA10
SA35 to SA37
SA38
MBM29DL16XTE/BE70/90
Common Flash Memory Interface Code Table
Description
Query-unique ASCII string
“QRY”
Primary OEM Command Set
02h: AMD/FJ standard type
Address for Primary
Extended Table
Alternate OEM Command
Set (00h = not applicable)
Address for Alternate OEM
Extended Table
VCC Min (write/erase)
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
VCC Max (write/erase)
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
VPP Min voltage
VPP Max voltage
Typical timeout per single
byte/word write 2N µs
Typical timeout for Min size
buffer write 2N µs
Typical timeout per individual
sector erase 2N ms
Typical timeout for full chip
erase 2N ms
Max timeout for byte/word
write 2N times typical
Max timeout for buffer write
2N times typical
Max timeout per individual
sector erase 2N times typical
Max timeout for full chip
erase 2N times typical
Device Size = 2N byte
Flash Device Interface
description 02h : ×8/×16
Max. number of bytes in
multi-byte write = 2N
Number of Erase Block
Regions within device
Erase Block Region 1
Information
bit 15 to bit 0 : y = number of
sectors
bit 31 to bit 16 : z = size
(z×256 bytes)
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
DQ15 to
DQ0
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
1Bh
0027h
A6 to A0
1Ch
0036h
1Dh
1Eh
0000h
0000h
1Fh
0004h
20h
0000h
21h
000Ah
22h
0000h
23h
0005h
24h
0000h
25h
0004h
26h
0000h
27h
28h
29h
2Ah
2Bh
0015h
0002h
0000h
0000h
0000h
2Ch
0002h
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Description
A6 to A0
DQ15 to
DQ0
Erase Block Region 2
Information
bit 15 to bit 0 : y = number of
sectors
bit 31 to bit 16 : z = size
(z×256 bytes)
31h
32h
33h
34h
001Eh
0000h
0000h
0001h
40h
41h
42h
43h
44h
0050h
0052h
0049h
0031h
0032h
45h
0000h
46h
0002h
47h
0001h
48h
0001h
49h
0004h
4Ah
00XXh
4Bh
0000h
4Ch
0000h
4Dh
0085h
4Eh
0095h
4Fh
00XXh
50h
0001h
Query-unique ASCII string
“PRI”
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
00h = Required
Erase Suspend
02h = To Read & Write
Sector Protection
00h = Not Supported
X = Number of sectors in per
group
Sector Temporary
Unprotection
01h = Supported
Sector Protection
Algorithm
Number of Sector for Bank 2
00h = Not Supported
1Fh = MBM29DL161TE
1Ch = MBM29DL162TE
18h = MBM29DL163TE
10h = MBM29DL164TE
1Fh = MBM29DL161BE
1Ch = MBM29DL162BE
18h = MBM29DL163BE
10h = MBM29DL164BE
Burst Mode Type
00h = Not Supported
Page Mode Type
00h = Not Supported
VACC (Acceleration) Supply
Minimum
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
VACC (Acceleration) Supply
Maximum
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
Boot Type
02h = MBM29DL16XBE
03h = MBM29DL16XTE
Program Suspend
01h = Supported
25
MBM29DL16XTE/BE70/90
■ FUNCTIONAL DESCRIPTION
• Simultaneous Operation
MBM29DL16XTE/BE have feature, which is capability of reading data from one bank of memory while a program
or erase operation is in progress in the other bank of memory (simultaneous operation), in addition to the
conventional features (read, program, erase, erase-suspend read, and erase-suspend program). The bank
selection can be selected by bank address (A19 to A15) with zero latency.
The MBM29DL161TE/BE have two banks which contain
Bank 1 (8KB × 8 sectors) and Bank 2 (64KB × 31 sectors).
The MBM29DL162TE/BE have two banks which contain
Bank 1 (8KB × 8 sectors, 64KB × 3 sectors) and Bank 2 (64KB × 28 sectors).
The MBM29DL163TE/BE have two banks which contain
Bank 1 (8KB × 8 sectors, 64KB × 7 sectors) and Bank 2 (64KB × 24 sectors).
The MBM29DL164TE/BE have two banks which contain
Bank 1 (8KB × 8 sectors, 64KB × 15 sectors) and Bank 2 (64KB × 16 sectors).
The simultaneous operation can not execute multi-function mode in the same bank. “Simultaneous Operation
Table” shows combination to be possible for simultaneous operation. (Refer to “(8) Bank-to-bank Read/Write
Timing Diagram” in ■TIMING DIAGRAM.)
Simultaneous Operation Table
Case
Bank 1 Status
Bank 2 Status
1
Read mode
Read mode
2
Read mode
Autoselect mode
3
Read mode
Program mode
4
Read mode
Erase mode *
5
Autoselect mode
Read mode
6
Program mode
Read mode
7
Erase mode *
Read mode
*: By writing erase suspend command on the bank address of sector being erased, the erase operation becomes
suspended so that it enables reading from or programming the remaining sectors.
• Read Mode
The MBM29DL16XTE/BE have two control functions which must be satisfied in order to obtain data at the outputs.
CE is the power control and should be used for a device selection. OE is the output control and should be used
to gate data to the output pins if a device is selected.
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable
access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output
enable access time (tOE) is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
addresses have been stable for at least tACC-tOE time.) When reading out a data without changing addresses after
power-up, it is necessary to input hardware reset or to change CE pin from “H” to “L”.
26
MBM29DL16XTE/BE70/90
• Standby Mode
There are two ways to implement the standby mode on the MBM29DL16XTE/BE devices, one using both the
CE and RESET pins; the other via the RESET pin only.
When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at VCC ± 0.3 V.
Under this condition the current consumed is less than 5 µA max. During Embedded Algorithm operation, VCC
active current (ICC2) is required even CE = “H”. The device can be read with standard access time (tCE) from either
of these standby modes.
When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at VSS ± 0.3 V
(CE = “H” or “L”). Under this condition the current is consumed is less than 5 µA max. Once the RESET pin is
taken high, the device requires tRH of wake up time before outputs are valid for read access.
In the standby mode the outputs are in the high impedance state, independent of the OE input.
• Automatic Sleep Mode
There is a function called automatic sleep mode to restrain power consumption during read-out of
MBM29DL16XTE/BE data. This mode can be used effectively with an application requested low power
consumption such as handy terminals.
To activate this mode, MBM29DL16XTE/BE automatically switch themselves to low power mode when
MBM29DL16XTE/BE addresses remain stably during access fine of 150 ns. It is not necessary to control CE,
WE, and OE on the mode. Under the mode, the current consumed is typically 1 µA (CMOS Level).
During simultaneous operation, VCC active current (ICC2) is required.
Since the data are latched during this mode, the data are read-out continuously. If the addresses are changed,
the mode is canceled automatically and MBM29DL16XTE/BE read-out the data for changed addresses.
• Output Disable
With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins
to be in a high impedance state.
• Autoselect
The autoselect mode allows the reading out of a binary code from the devices and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically matching
the devices to be programmed with its corresponding programming algorithm. This mode is functional over the
entire temperature range of the devices.
To activate this mode, the programming equipment must force VID (11.5 V to 12.5 V) on address pin A9. Two
identifier bytes may then be sequenced from the devices outputs by toggling address A0 from VIL to VIH. All
addresses are DON’T CARES except A6, A1 A0, and (A-1). (See “MBM29DL16XTE/BE User Bus Operations
Tables (BYTE = VIH and BYTE = VIL)” in ■DEVICE BUS OPERATION.)
The manufacturer and device codes may also be read via the command register, for instances when the
MBM29DL16XTE/BE are erased or programmed in a system without access to high voltage on the A9 pin. The
command sequence is illustrated in “MBM29DL16XTE/BE Command Definitions Table” in ■DEVICE BUS
OPERATION. (Refer to “Autoselect Command” in ■COMMAND DEFINITIONS.)
Word 0 (A0 = VIL) represents the manufacturer’s code (Fujitsu = 04h) and word 1 (A0 = VIH) represents the device
identifier code (MBM29DL161TE = 36h and MBM29DL161BE = 39h for ×8 mode; MBM29DL161TE = 2236h
and MBM29DL161BE = 2239h for ×16 mode), (MBM29DL162TE = 2Dh and MBM29DL162BE = 2Eh for ×8
mode; MBM29DL162TE = 222Dh and MBM29DL162BE = 222Eh for ×16 mode), (MBM29DL163TE = 28h and
MBM29DL163BE = 2Bh for ×8 mode; MBM29DL163TE = 2228h and MBM29DL163BE = 222Bh for ×16 mode),
27
MBM29DL16XTE/BE70/90
(MBM29DL164TE = 33h and MBM29DL164BE = 35h for ×8 mode; MBM29DL164TE = 2233h and
MBM29DL164BE = 2235h for ×16 mode). These two bytes/words are given in “MBM29DL16XTE/BE Sector
Group Protection Verify Autoselect Codes Tables” and “Expanded Autoselect Code Tables” in ■DEVICE BUS
OPERATION. All identifiers for manufactures and device will exhibit odd parity with DQ7 defined as the parity
bit. In order to read the proper device codes when executing the autoselect, A1 must be VIL. (See
“MBM29DL16XTE/BE Sector Group Protection Verify Autoselect Codes Tables” and “Expanded Autoselect Code
Tables” in ■DEVICE BUS OPERATION.)
In case of applying VID on A9, since both Bank 1 and Bank 2 enter Autoselect mode, the simultenous operation
cannot be executed.
• Write
Device erasure and programming are accomplished via the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The
command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on
the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE,
whichever happens first. Standard microprocessor write timings are used.
Refer to “AC Characteristics” in ■ELECTRICAL CHARACTERISTICS and ■TIMING DIAGRAM.
• Sector Group Protection
The MBM29DL16XTE/BE feature hardware sector group protection. This feature will disable both program and
erase operations in any combination of 17 sector groups of memory. (See “Sector Group Addresses Tables
(MBM29DL16XTE/BE)” in ■FLEXIBLE SECTOR-ERASE ARCHITECTURE). The sector group protection
feature is enabled using programming equipment at the user’s site. The device is shipped with all sector groups
unprotected.
To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest
VID = 11.5 V), CE = VIL and A0 = A6 = VIL, A1 = VIH. The sector group addresses (A19, A18, A17, A16, A15, A14, A13,
and A12) should be set to the sector to be protected. “Sector Address Tables (MBM29DL161TE/BE,
MBM29DL162TE/BE, MBM29DL163TE/BE, MBM29DL164TE/BE)” in ■FLEXIBLE SECTOR-ERASE
ARCHITECTURE define the sector address for each of the thirty nine (39) individual sectors, and “Sector Group
Addresses Tables (MBM29DL16XTE/BE)” in ■FLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector
group address for each of the seventeen (17) individual group sectors. Programming of the protection circuitry
begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector group
addresses must be held constant during the WE pulse. See “(15) AC Waveforms for Sector Group Protection”
in ■TIMING DIAGRAM and “(5) Sector Group Protection Algorithm” in ■FLOW CHART for sector group
protection waveforms and algorithm.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
with CE and OE at VIL and WE at VIH. Scanning the sector group addresses (A19, A18, A17, A16, A15, A14, A13, and
A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” code at device output DQ0 for a protected sector.
Otherwise the device will produce “0” for unprotected sector. In this mode, the lower order addresses, except
for A6, A1, and A0 are DON’T CARES. Address locations with A1 = VIL are reserved for Autoselect manufacturer
and device codes. A-1 requires to apply to VIL on byte mode.
It is also possible to determine if a sector group is protected in the system by writing an Autoselect command.
Performing a read operation at the address location XX02h, where the higher order addresses (A19, A18, A17, A16,
A15, A14, A13, and A12) are the desired sector group address will produce a logical “1” at DQ0 for a protected sector
28
MBM29DL16XTE/BE70/90
group. See “MBM29DL16XTE/BE Sector Group Protection Verify Autoselect Codes Tables” and “Expanded
Autoselect Code Tables” in ■DEVICE BUS OPERATION for Autoselect codes.
• Temporary Sector Group Unprotection
This feature allows temporary unprotection of previously protected sector groups of the MBM29DL16XTE/BE
devices in order to change data. The Sector Group Unprotection mode is activated by setting the RESET pin to
high voltage (VID). During this mode, formerly protected sector groups can be programmed or erased by selecting
the sector group addresses. Once the VID is taken away from the RESET pin, all the previously protected sector
groups will be protected again. Refer to “(16) Temporary Sector Group Unprotection Timing Diagram” in ■TIMING
DIAGRAM and “(6) Temporary Sector Group Protection Algorithm” in ■FLOW CHART.
• RESET
Hardware Reset
The MBM29DL16XTE/BE devices may be reset by driving the RESET pin to VIL. The RESET pin has a pulse
requirement and has to be kept low (VIL) for at least “tRP” in order to properly reset the internal state machine.
Any operation in the process of being executed will be terminated and the internal state machine will be reset
to the read mode “tREADY” after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the
devices require an additional “tRH” before it will allow read access. When the RESET pin is low, the devices will
be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware
reset occurs during a program or erase operation, the data at that particular location will be corrupted. Please
note that the RY/BY output signal should be ignored during the RESET pulse. See “(11) RESET, RY/BY Timing
Diagram” in ■TIMING DIAGRAM for the timing diagram. Refer to Temporary Sector Group Unprotection for
additional functionality.
• Byte/Word Configuration
The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29DL16XTE/BE devices. When
this pin is driven high, the devices operate in the word (16-bit) mode.The data is read and programmed at DQ15
to DQ0. When this pin is driven low, the devices operate in byte (8-bit) mode. Under this mode, the DQ15/A-1 pin
becomes the lowest address bit and DQ14 to DQ8 bits are tri-stated. Refer to “(12) Timing Diagram for Word
Mode Configuration”, “(13) Timing Diagram for Byte Mode Configuration” and “(14) BYTE Timing Diagram for
Write Operations” in ■TIMING DIAGRAM.
• Boot Block Sector Protection
The Write Protect function provides a hardware method of protecting certain boot sectors without using VID. This
function is one of two provided by the WP/ACC pin.
If the system asserts VIL on the WP/ACC pin, the device disables program and erase functions in the two
“outermost” 8K byte boot sectors (MBM29DL16XTE: SA37 and SA38, MBM29DL16XBE: SA0 and SA1)
independently of whether those sectors were protected or unprotected using the method described in “Sector
Group Protection”. The two outermost 8K byte boot sectors are the two sectors containing the lowest addresses
in a bottom-boot-configured device, or the two sectors containing the highest addresses in a top-boot-congfigured
device.
If the system asserts VIH on the WP/ACC pin, the device reverts to whether the two outermost 8K byte boot
sectors were last set to be protected or unprotected. That is, sector group protection or unprotection for these
two sectors depends on whether they were last protected or unprotected using the method described in “Sector
Group Protection”.
29
MBM29DL16XTE/BE70/90
• Accelerated Program Operation
MBM29DL16XTE/BE offer accelerated program operation which enables the programming in high speed. If the
system asserts VACC to the WP/ACC pin, the device automatically enters the acceleration mode and the time
required for program operation will reduce to about 60%. This function is primarily intended to allow high speed
program, so caution is needed as the sector group will temporarily be unprotected.
The system would use a fact program command sequence when programming during acceleration mode.
Set command to fast mode and reset command from fast mode are not necessary. When the device enters the
acceleration mode, the device automatically set to fast mode. Therefore, the pressent sequence could be
used for programming and detection of completion during acceleration mode.
Removing VACC from the WP/ACC pin returns the device to normal operation. Do not remove VACC from WP/
ACC pin while programming. See “(18) Accelerated Program Timing Diagram” in ■TIMING DIAGRAM.
Erase operation at Acceleration mode is strictly prohibited.
30
MBM29DL16XTE/BE70/90
■ COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the
read mode. Some commands are required Bank Address (BA) input. When command sequences are inputed
to bank being read, the commands have priority than reading. “MBM29DL16XTE/BE Command Definitions
Table” in ■DEVICE BUS OPERATION defines the valid register command sequences. Note that the Erase
Suspend (B0h) and Erase Resume (30h) commands are valid only while the Sector Erase operation is in
progress. Moreover both Read/Reset commands are functionally equivalent, resetting the device to the read
mode. Please note that commands are always written at DQ7 to DQ0 and DQ15 to DQ8 bits are ignored.
• Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ5 = 1) to Read/Reset mode, the Read/
Reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to “2. AC
Characteristics • Read Only Operations Characteristics” in ■ELECTRICAL CHARACTERISTICS and ■TIMING
DIAGRAM.
• Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM
programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device
codes can be read from the bank, and an actual data of memory cell can be read from the another bank.
Following the command write, a read cycle from address (BA)00h retrieves the manufacture code of 04h. A read
cycle from address (BA)01h for ×16((BA)02h for ×8) returns the device code (MBM29DL161TE = 36h and
MBM29DL161BE = 39h for ×8 mode; MBM29DL161TE = 2236h and MBM29DL161BE = 2239h for ×16 mode),
(MBM29DL162TE = 2Dh and MBM29DL162BE = 2Eh for ×8 mode; MBM29DL162TE = 222Dh and
MBM29DL162BE = 222Eh for ×16 mode), (MBM29DL163TE = 28h and MBM29DL163BE = 2Bh for ×8 mode;
MBM29DL163TE = 2228h and MBM29DL163BE = 222Bh for ×16 mode), (MBM29DL164TE = 33h and
MBM29DL164BE = 35h for ×8 mode; MBM29DL164TE = 2233h and MBM29DL164BE = 2235h for ×16 mode).
(See “MBM29DL16XTE/BE Sector Group Protection Verify Autoselect Codes Tables” and “Expanded Autoselect
Code Tables” in ■DEVICE BUS OPERATION.)
All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit. Sector state (protection
or unprotection) will be informed by address (BA)02h for ×16 ((BA)04h for ×8). Scanning the sector group
addresses (A19, A18, A17, A16, A15, A14, A13, and A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” at device
output DQ0 for a protected sector group. The programming verification should be performed by verify sector
group protection on the protected sector. (See “MBM29DL16XTE/BE User Bus Operations Tables (BYTE = VIH
and BYTE = VIL)” in ■DEVICE BUS OPERATION.)
31
MBM29DL16XTE/BE70/90
The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and
device codes and sector group protection status from non-selected bank, it is necessary to write Read/Reset
command sequence into the register and then Autoselect command should be written into the bank to be read.
If the software (program code) for Autoselect command is stored into the Flash memory, the device and
manufacture codes should be read from the other bank where is not contain the software.
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command
sequence.
• Byte/Word Programming
The devices are programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle
operation. There are two “unlock” write cycles. These are followed by the program set-up command and data
write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is
latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever
happens first) begins programming. Upon executing the Embedded Program Algorithm command sequence,
the system is not required to provide further controls or timings. The device will automatically provide adequate
internally generated program pulses and verify the programmed cell margin.
The system can determine the status of the program operation by using DQ7 (Data Polling), DQ6 (Toggle Bit),
or RY/BY. The Data Polling and Toggle Bit must be performed at the memory location which is being programmed.
The automatic programming operation is completed when the data on DQ7 is equivalent to data written to this
bit at which time the devices return to the read mode and addresses are no longer latched. (See “Hardware
Sequence Flags Table”.) Therefore, the devices require that a valid address to the devices be supplied by the
system at this particular instance of time. Hence, Data Polling must be performed at the memory location which
is being programmed.
Any commands written to the chip during this period will be ignored. If hardware reset occurs during the
programming operation, it is impossible to guarantee the data are being written.
Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success
according to the data polling algorithm but a read from Read/Reset mode will show that the data is still “0”. Only
erase operations can convert “0”s to “1”s.
“(1) Embedded ProgramTM Algorithm” in ■FLOW CHART illustrates the Embedded ProgramTM Algorithm using
typical command strings and bus operations.
• Program Suspend/Resume
The Program Suspend command allows the system to interrupt a program operation so that data can be read
from any address.Writing the Program Suspend command (B0h) during the Embedded Program operation
immediately suspends the programming.The Program Suspend command mav also be issued during a
programming operation while an erase is suspend.The bank addresses of sector being programed should be
set when writing the Program Suspend command.
When the Program Suspend command is written during a programming process , the device halts the program
operation within 1 µs and updates the status bits.
After the program operation has been suspended, the system can read data from any address.The data at
program-suspend address is not valid. Normal read timing and command definitions apply.
32
MBM29DL16XTE/BE70/90
After the Program Resume command (30h) is written, the device reverts to programming. The bank addresses
of sector being suspended should be set when writing the Program Resume command. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program
operation.See “Write Operation Status” for more information.
The system may also write the autoselect command sequence when the device in the Program Suspend mode.
The device allows reading autoselect codes at the addresses within programming sectors, since the codes are
not stored in the memory. When the device exits the autoselect mode, the device reverts to the Program Suspend
mode, and is ready for another valid operation. See“Autoselect Command” for more information.
The system must write the Program Resume command (address bits are “Bank Address”) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Resume command are ignored.
Another Program Suspend command can be written after the device has resume programming.
• Chip Erase
Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the chip erase command.
Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase
Algorithm command sequence the devices will automatically program and verify the entire memory for an all
zero data pattern prior to electrical erase (Preprogram function). The system is not required to provide any
controls or timings during these operations.
The system can determine the status of the erase operation by using DQ7 (Data Polling), DQ6 (Toggle Bit), or
RY/BY. The chip erase begins on the rising edge of the last CE or WE, whichever happens first in the command
sequence and terminates when the data on DQ7 is “1” (See “Write Operation Status”.) at which time the device
returns to read the mode.
Chip Erase Time; Sector Erase Time × All sectors + Chip Program Time (Preprogramming)
“(2) Embedded EraseTM Algorithm” in ■FLOW CHART illustrates the Embedded EraseTM Algorithm using typical
command strings and bus operations.
• Sector Erase
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector
address (any address location within the desired sector) is latched on the falling edge of CE or WE whichever
happens later, while the command (Data = 30h) is latched on the rising edge of CE or WE which happens first.
After time-out of “tTOW” from the rising edge of the last sector erase command, the sector erase operation will begin.
Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29DL16XTE/BE
Command Definitions Table” in ■DEVICE BUS OPERATION. This sequence is followed with writes of the Sector
Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must
be less than “tTOW” otherwise that command will not be accepted and erasure will start. It is recommended that
processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-enabled
after the last Sector Erase command is written. A time-out of “tTOW” from the rising edge of last CE or WE whichever
happens first will initiate the execution of the Sector Erase command(s). If another falling edge of CE or WE,
whichever happens first occurs within the “tTOW” time-out window the timer is reset. (Monitor DQ3 to determine
if the sector erase timer window is still open, see section DQ3, Sector Erase Timer.) Any command other than
Sector Erase or Erase Suspend during this time-out period will reset the devices to the read mode, ignoring the
previous command string. Resetting the devices once execution has begun will corrupt the data in the sector.
33
MBM29DL16XTE/BE70/90
In that case, restart the erase on those sectors and allow them to complete. (Refer to the Write Operation Status
section for Sector Erase Timer operation.) Loading the sector erase buffer may be done in any sequence and
with any number of sectors (0 to 38).
Sector erase does not require the user to program the devices prior to erase. The devices automatically program
all memory locations in the sector(s) to be erased prior to electrical erase (Preprogram function). When erasing
a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any
controls or timings during these operations.
The system can determine the status of the erase operation by using DQ7 (Data Polling), DQ6 (Toggle Bit), or
RY/BY.
The sector erase begins after the “tTOW” time out from the rising edge of CE or WE whichever happens first for
the last sector erase command pulse and terminates when the data on DQ7 is “1” (See “Write Operation Status”.)
at which time the devices return to the read mode. Data polling and Toggle Bit must be performed at an address
within any of the sectors being erased.
Multiple Sector Erase Time; [Sector Erase Time + Sector Program Time (Preprogramming)] × Number of Sector
Erase
In case of multiple sector erase across bank boundaries, a read from bank (read-while-erase) can not performe.
“(2) Embedded EraseTM Algorithm” in ■FLOW CHART illustrates the Embedded EraseTM Algorithm using typical
command strings and bus operations.
• Erase Suspend/Resume
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads
from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase
operation which includes the time-out period for sector erase. The Erase Suspend command will be ignored if
written during the Chip Erase operation or Embedded Program Algorithm. Writting the Erase Suspend command
(B0h) during the Sector Erase time-out results in immediate termination of the time-out period and suspension
of the erase operation.
Writing the Erase Resume command (30h) resumes the erase operation. The bank addresses of sector being
erasing or suspending should be set when writting the Erase Suspend or Erase Resume command.
When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum
of “tSPD” to suspend the erase operation. When the devices have entered the erase-suspended mode, the
RY/BY output pin will be at High-Z and the DQ7 bit will be at logic “1”, and DQ6 will stop toggling. The user must
use the address of the erasing sector for reading DQ6 and DQ7 to determine if the erase operation has been
suspended. Further writes of the Erase Suspend command are ignored.
When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ2 to toggle. (See “DQ2”.)
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate
command sequence for Program. This program mode is known as the erase-suspend-program mode. Again,
programming in this mode is the same as programming in the regular Program mode except that the data must
be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the devices are in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erasesuspended Program operation is detected by the RY/BY output pin, Data polling of DQ7 or by the Toggle Bit I
(DQ6) which is the same as the regular Program operation. Note that DQ7 must be read from the Program address
while DQ6 can be read from any address within bank being erase-suspended.
34
MBM29DL16XTE/BE70/90
To resume the operation of Sector Erase, the Resume command (30h) should be written to the bank being erase
suspended. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend
command can be written after the chip has resumed erasing.
• Extended Command
(1) Fast Mode
MBM29DL16XTE/BE have Fast Mode function. This mode dispenses with the initial two unclock cycles
required in the standard program command sequence by writing Fast Mode command into the command
register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in
standard program command. (Do not write erase command in this mode.) The read operation is also executed
after exiting this mode. To exit this mode, it is necessary to write Fast Mode Reset command into the command
register. The first cycle must contain the bank address. (Refer to “(7) Embedded ProgramTM Algorithm for
Fast Mode” in ■FLOW CHART.) The VCC active current is required even CE = VIH during Fast Mode.
(2) Fast Programming
During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program
Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). (Refer to
“(7) Embedded ProgramTM Algorithm for Fast Mode” in ■FLOW CHART.)
(3) Extended Sector Group Protection
In addition to normal sector group protection, the MBM29DL16XTE/BE have Extended Sector Group
Protection as extended function. This function enables to protect sector group by forcing VID on RESET pin
and write a command sequence. Unlike conventional procedure, it is not necessary to force VID and control
timing for control pins. The extended sector group protection requires VID on RESET pin only. With this
condition, the operation is initiated by writing the set-up command (60h) into the command register. Then,
the sector group addresses pins (A20, A19, A18, A17, A16, A15, A14, A13 and A12) and (A6, A1, A0) = (0, 1, 0) should
be set to the sector group to be protected (recommend to set VIL for the other addresses pins), and write
extended sector group protection command (60h). A sector group is typically protected in 250 µs. To verify
programming of the protection circuitry, the sector group addresses pins (A20, A19, A18, A17, A16, A15, A14, A13
and A12) and (A6, A1, A0) = (0, 1, 0) should be set and write a command (40h). Following the command write,
a logical “1” at device output DQ0 will produce for protected sector in the read operation. If the output data
is logical “0”, please repeat to write extended sector group protection command (60h) again. To terminate
the operation, it is necessary to set RESET pin to VIH. (Refer to “(17) Extended Sector Group Protection
Timing Diagram” in ■TIMING DIAGRAM and “(8) Extended Sector Group Protection Algorithm” in ■FLOW
CHART.)
(4) CFI (Common Flash Memory Interface)
The CFI (Common Flash Memory Interface) specification outlines device and host system software
interrogation handshake which allows specific vendor-specified software algorithms to be used for entire
families of devices. This allows device-independent, JEDEC ID-independent, and forward-and backwardcompatible software support for the specified flash device families. Refer to CFI specification in detail.
The operation is initiated by writing the query command (98h) into the command register. The bank address
should be set when writing this command. Then the device information can be read from the bank, and an
actual data of memory cell be read from the another bank. Following the command write, a read cycle from
specific address retrives device information. Please note that output data of upper byte (DQ15 to DQ8) is “0”
in word mode (16 bit) read. Refer to “Common Flash Memory Interface Code Table” in ■FLEXBLE SECTORERASE ARCHITECTURE. To terminate operation, it is necessary to write the read/reset command sequence
into the register. (See “Common Flash Memory Interface Code Table” in ■FLEXIBLE SECTOR-ERASE
ARCHITECTURE.)
35
MBM29DL16XTE/BE70/90
• HiddenROM Region
The HiddenROM feature provides a Flash memory region that the system may access through a new command
sequence. This is primarily intended for customers who wish to use an Electronic Serial Number (ESN) in the
device with the ESN protected against modification. Once the HiddenROM region is protected, any further
modification of that region is impossible. This ensures the security of the ESN once the product is shipped to
the field.
The HiddenROM region is 64 Kbytes in length and is stored at the same address of the 8 KB ×8 sectors. The
MBM29DL16XTE occupies the address of the byte mode 1F0000h to 1FFFFFh (word mode 0F8000h to
0FFFFFh) and the MBM29DL16XBE type occupies the address of the byte mode 000000h to 00FFFFh (word
mode 000000h to 007FFFh). After the system has written the Enter HiddenROM command sequence, the system
may read the HiddenROM region by using the addresses normally occupied by the boot sectors. That is, the
device sends all commands that would normally be sent to the boot sectors to the HiddenROM region. This
mode of operation continues until the system issues the Exit HiddenROM command sequence, or until power
is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands
to the boot sectors.
• HiddenROM Entry Command
MBM29DL16XTE/BE have a HiddenROM area with One Time Protect function. This area is to enter the security
code and to unable the change of the code once set. Program/erase is possible in this area until it is protected.
However, once it is protected, it is impossible to unprotect, so please use this with caution.
HiddenROM area is 64 Kbyte and in the same address area of 8 KB sectors. The address of top boot is 1F0000h
to 1FFFFFh at byte mode (0F8000h to 0FFFFFh at word mode) and the bottom boot is 000000h to 00FFFFh
at byte mode (000000h to 007FFFh at word mode). These areas are normally the boot block area (8 KB ×
8 sectors). Therefore, write the HiddenROM entry command sequence to enter the HiddenROM area. It is called
as HiddenROM mode when the HiddenROM area appears.
Sector other than the boot block area could be read during HiddenROM mode. Read/program/earse of the
HiddenROM area is possible during HiddenROM mode. Write the HiddenROM reset command sequence to exit
the HiddenROM mode. The bank address of the HiddenROM should be set on the third cycle of this reset
command sequence.
In case of MBM29DL161TE/BE, whose Bank 1 size is 0.5 Mbit, the simultaneous operation cannot execute
multi-function mode between the HiddenROM area and Bank 2 Region.
• HiddenROM Program Command
To program the data to the HiddenROM area, write the HiddenROM program command sequence during
HiddenROM mode. This command is the same as the program command in the past except to write the command
during HiddenROM mode. Therefore the detection of completion method is the same as in the past, using the
DQ7 data poling, DQ6 toggle bit and RY/BY pin. Need to pay attention to the address to be programmed. If the
address other than the HiddenROM area is selected to program, the data of the address will be changed.
• HiddenROM Erase Command
To erase the HiddenROM area, write the HiddenROM erase command sequence during HiddenROM mode.
This command is the same as the sector erase command in the past except to write the command during
HiddenROM mode. Therefore the detection of completion method is the same as in the past, using the DQ7 data
poling, DQ6 toggle bit and RY/BY pin. Need to pay attention to the sector address to be erased. If the sector
address other than the HiddenROM area is selected, the data of the sector will be changed.
36
MBM29DL16XTE/BE70/90
• HiddenROM Protect Command
There are two methods to protect the HiddenROM area. One is to write the sector group protect setup command
(60h), set the sector address in the HiddenROM area and (A6, A1, A0) = (0,1,0), and write the sector group
protect command (60h) during the HiddenROM mode. The same command sequence could be used because
except that it is in the HiddenROM mode and that it does not apply high voltage to RESET pin, it is the same as
the extension sector group protect in the past. Please refer to “Extended Command (3) Extended Sector Group
Protection” for details of extention sector group protect setting.
The other is to apply high voltage (VID) to A9 and OE, set the sector address in the HiddenROM area and (A6,
A1, A0) = (0,1,0), and apply the write pulse during the HiddenROM mode. To verify the protect circuit, apply high
voltage (VID) to A9, specify (A6, A1, A0) = (0,1,0) and the sector address in the HiddenROM area, and read. When
“1” appears to DQ0, the protect setting is completed. “0” will appear to DQ0 if it is not protected. Please apply
write pulse agian. The same command sequence could be used for the above method because other than the
HiddenROM mode, it is the same as the sector group protect in the past. Please refer to “Sector Group Protection”
in ■FUNCTIONAL DESCRIPTION for details of sector group protect setting
Other sector group will be effected if the address other than the HiddenROM area is selected for the sector group
address, so please be carefull. Once it is protected, protection can not be cancelled, so please pay closest
attention.
• Write Operation Status
Detailed in “Hardware Sequence Flags Table” are all the status flags that can determine the status of the bank
for the current mode operation. The read operation from the bank where is not operate Embedded Algorithm
returns a data of memory cell. These bits offer a method for determining whether a Embedded Algorithm is
completed properly. Information on DQ2 is address sensitive. This means that if an address from an erasing
sector is consectively read, then the DQ2 bit will toggle. However, DQ2 will not toggle if an address from a nonerasing sector is consectively read. This allows the user to determine which sectors are erasing and which are not.
The status flag is not output from bank (non-busy bank) not executing Embedded Algorithm. For example, there
is bank (busy bank) which is now executing Embedded Algorithm. When the read sequence is [1] <busy bank>,
[2] <non-busy bank>, [3] <busy bank>, the DQ6 is toggling in the case of [1] and [3]. In case of [2], the data of
memory cell is outputted. In the erase-suspend read mode with the same read sequence, DQ6 will not be toggled
in the [1] and [3].
In the erase suspend read mode, DQ2 is toggled in the [1] and [3]. In case of [2], the data of memory cell is
outputted.
37
MBM29DL16XTE/BE70/90
Hardware Sequence Flags Table
DQ7
DQ6
DQ5
DQ3
DQ2
DQ7
Toggle
0
0
1
0
Toggle
0
1
Toggle*1
1
1
0
0
Toggle
Data
Data
DQ7
Toggle
Data
Data
Data Data
Data
Data
Data
Data Data
Data
Embedded Program Algorithm
DQ7
Toggle
1
0
1
Embedded Erase Algorithm
Exceeded
Time Limits Erase
Erase Suspend Program
Suspended
(Non-Erase Suspended Sector)
Mode
0
Toggle
1
1
N/A
DQ7
Toggle
1
0
N/A
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase Suspend Read
(Erase Suspended Sector)
Erase
Erase Suspend Read
Suspended
(Non-Erase Suspended Sector)
In Progress Mode
Erase Suspend Program
(Non-Erase Suspended Sector)
Program Suspend Read
Program
(Program Suspended Sector)
Suspended
Program Suspend Read
Mode
(Non-Program Suspended Sector)
Data Data
0
0
Data
1 *2
*1 : Successive reads from the erasing or erase-suspend sector cause DQ2 to toggle.
*2 : Reading from non-erase suspend sector address indicates logic “1” at the DQ2 bit.
• DQ7
Data Polling
The MBM29DL16XTE/BE devices feature Data Polling as a method to indicate to the host that the Embedded
Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the
devices will produce the complement of the data last written to DQ7. Upon completion of the Embedded Program
Algorithm, an attempt to read the device will produce the true data last written to DQ7. During the Embedded
Erase Algorithm, an attempt to read the device will produce a “0” at the DQ7 output. Upon completion of the
Embedded Erase Algorithm an attempt to read the device will produce a “1” at the DQ7 output. The flowchart
for Data Polling (DQ7) is shown in “(3) Data Polling Algorithm” in ■FLOW CHART.
For programming, the Data Polling is valid after the rising edge of fourth write pulse in the four write pulse
sequence.
For chip erase and sector erase, the Data Polling is valid after the rising edge of the sixth write pulse in the six
write pulse sequence. Data Polling must be performed at sector address within any of the sectors being erased
and not a protected sector. Otherwise, the status may not be valid.
If a program address falls within a protected sector, Data Polling on DQ7 is active for approximately 1 µs, then
that bank returns to the read mode. After an erase command sequence is written, if all sectors selected for
erasing are protected, Data Polling on DQ7 is active for approximately 400 µs, then the bank returns to read mode.
Once the Embedded Algorithm operation is close to being completed, the MBM29DL16XTE/BE data pins (DQ7)
may change asynchronously while the output enable (OE) is asserted low. This means that the devices are
38
MBM29DL16XTE/BE70/90
driving status information on DQ7 at one instant of time and then that byte’s valid data at the next instant of time.
Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device
has completed the Embedded Algorithm operation and DQ7 has a valid data, the data outputs on DQ6 to DQ0
may be still invalid. The valid data on DQ7 to DQ0 will be read on the successive read attempts.
The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm
or sector erase time-out. (See “Hardware Sequence Flags Table”.)
See “(6) AC Waveforms for Data Polling during Embedded Algorithm Operations” in ■TIMING DIAGRAM for the
Data Polling timing specifications and diagrams.
• DQ6
Toggle Bit I
The MBM29DL16XTE/BE also feature the “Toggle Bit I” as a method to indicate to the host system that the
Embedded Algorithms are in progress or completed.
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (CE or OE toggling) data
from the devices will result in DQ6 toggling between “1” and “0”. Once the Embedded Program or Erase Algorithm
cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts. During
programming, the Toggle Bit I is valid after the rising edge of the fourth write pulse in the four write pulse sequence.
For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth write pulse in the six
write pulse sequence. The Toggle Bit I is active during the sector time out.
In programming, if the sector being written to is protected, the toggle bit will toggle for about 1 µs and then stop
toggling without the data having changed. In erase, the devices will erase all the selected sectors except for the
ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 400 µs
and then drop back into read mode, having changed none of the data.
Either CE or OE toggling will cause the DQ6 to toggle. In addition, an Erase Suspend/Resume command will
cause the DQ6 to toggle.
The system can use DQ6 to determine whether a sector is actively erasing or is erase-suspended. When a bank
is actively erasing (that is, the Embedded Erase Algorithm is in progress), DQ6 toggles. When a bank enters the
Erase Suspend mode, DQ6 stops toggling. Successive read cycles during the erase-suspend-program cause
DQ6 to toggle.
To operate toggle bit function properly, CE or OE must be high when bank address is changed.
See “(7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations” in ■TIMING DIAGRAM for the
Toggle Bit I timing specifications and diagrams.
• DQ5
Exceeded Timing Limits
DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under
these conditions DQ5 will produce a “1”. This is a failure condition which indicates that the program or erase
cycle was not successfully completed. Data Polling is the only operating function of the devices under this
condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA).
The OE and WE pins will control the output disable functions as described in “MBM29DL16XTE/BE User Bus
Operations Tables (BYTE = VIH and BYTE = VIL)” in ■DEVICE BUS OPERATION.
The DQ5 failure condition may also appear if a user tries to program a non blank location without erasing. In this
case the devices lock out and never complete the Embedded Algorithm operation. Hence, the system never
reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the devices have exceeded timing limits, the
39
MBM29DL16XTE/BE70/90
DQ5 bit will indicate a “1.” Please note that this is not a device failure condition since the devices were incorrectly
used. If this occurs, reset the device with command sequence.
• DQ3
Sector Erase Timer
After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ3 will
remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase
command sequence.
If Data Polling or the Toggle Bit I indicates the device has been written with a valid erase command, DQ3 may
be used to determine if the sector erase timer window is still open. If DQ3 is high (“1”) the internally controlled
erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or Toggle Bit I. If DQ3 is low (“0”), the device will accept
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of DQ3 prior to and following each subsequent Sector Erase command. If DQ3 were high on
the second status check, the command may not have been accepted.
See “Hardware Sequence Flags Table”.
• DQ2
Toggle Bit II
This toggle bit II, along with DQ6, can be used to determine whether the devices are in the Embedded Erase
Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the
devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause
DQ2 to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte
address of the non-erase suspended sector will indicate a logic “1” at the DQ2 bit.
DQ6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend
Program operation is in progress. The behavior of these two status bits, along with that of DQ7, is summarized
as follows:
For example, DQ2 and DQ6 can be used together to determine if the erase-suspend-read mode is in progress.
(DQ2 toggles while DQ6 does not.) See also “Toggle Bit Status Table” and “(9) DQ2 vs. DQ6” in ■TIMING
DIAGRAM.
Furthermore, DQ2 can also be used to determine which sector is being erased. When the device is in the erase
mode, DQ2 toggles if this bit is read from an erasing sector.
To operate toggle bit function properly, CE or OE must be high when bank address is changed.
• Reading Toggle Bits DQ6/DQ2
Whenever the system initially begins reading toggle bit status, it must read DQ7 to DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically a system would note and store the value of the toggle bit
after the first read. After the second read, the system would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on DQ7 to DQ0 on the following read cycle.
However, if, after the initial two read cycles, the system determines that the toggle bit is still toggling, the system
also should note whether the value of DQ5 is high (see the section on “DQ5”). If it is, the system should then
determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5
went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase
40
MBM29DL16XTE/BE70/90
operation. If it is still toggling, the device did not complete the operation successfully, and the system must write
the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the begining of the algorithm when it returns to determine
the status of the operation. (Refer to “(4) Toggle Bit Algorithm” in ■FLOW CHART.)
Toggle Bit Status Table
DQ7
DQ6
DQ2
DQ7
Toggle
1
Erase
0
Toggle
Toggle*1
Erase-Suspend Read
(Erase-Suspended Sector)
1
1
Toggle
DQ7
Toggle
1*2
Mode
Program
Erase-Suspend Program
*1 : Successive reads from the erasing or erase-suspend sector cause DQ2 to toggle.
*2 : Reading from the non-erase suspend sector address indicates logic “1” at the DQ2 bit.
• RY/BY
Ready/Busy
The MBM29DL16XTE/BE provide a RY/BY open-drain output pin as a way to indicate to the host system that
the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are
busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/
write or erase operation. When the RY/BY pin is low, the devices will not accept any additional program or erase
commands. If the MBM29DL16XTE/BE are placed in an Erase Suspend mode, the RY/BY output will be high.
During programming, the RY/BY pin is driven low after the rising edge of the fourth write pulse. During an erase
operation, the RY/BY pin is driven low after the rising edge of the sixth write pulse. The RY/BY pin will indicate
a busy condition during the RESET pulse. Refer to “(10) RY/BY Timing Diagram during Program/Erase
Operations” and “(11) RESET, RY/BY Timing Diagram” in ■TIMING DIAGRAM for a detailed timing diagram.
The RY/BY pin is pulled high in standby mode.
Since this is an open-drain output, the pull-up resistor needs to be connected to VCC ; multiples of devices may
be connected to the host system via more than one RY/BY pin in parallel.
• Data Protection
The MBM29DL16XTE/BE are designed to offer protection against accidental erasure or programming caused
by spurious system level signals that may exist during power transitions. During power up the devices
automatically reset the internal state machine in the Read mode. Also, with its control register architecture,
alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command
sequences.
The devices also incorporate several features to prevent inadvertent write cycles resulting form VCC power-up
and power-down transitions or system noise.
41
MBM29DL16XTE/BE70/90
• Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less
than VLKO (Min). If VCC < VLKO, the command register is disabled and all internal program/erase circuits are disabled.
Under this condition the device will reset to the read mode. Subsequent writes will be ignored until the VCC level
is greater than VLKO. It is the users responsibility to ensure that the control pins are logically correct to prevent
unintentional writes when VCC is above VLKO (Min).
If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used.
• Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE, CE, or WE will not initiate a write cycle.
• Logical Inhibit
Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write cycle CE and WE
must be a logic “0” while OE is a logic “1”.
• Power-Up Write Inhibit
Power-up of the devices with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the read mode on power-up.
• Sector Group Protection
Device user is able to protect each sector group individually to store and protect data. Protection circuit voids
both program and erase commands that are addressed to protected sectors.
Any command to program or erase addressed to protected sector are ignored (see “Sector Group Protection”
in ■ FUNCTIONAL DESCRIPTION).
42
MBM29DL16XTE/BE70/90
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Min
Max
Tstg
–55
+125
°C
TA
–40
+85
°C
VIN, VOUT
–0.5
VCC+0.5
V
Power Supply Voltage *1
VCC
–0.5
+4.0
V
A9, OE, and RESET *1, *3
VIN
–0.5
+13.0
V
1, 4
VACC
–0.5
+10.5
V
Storage Temperature
Ambient Temperature with Power Applied
Voltage with Respect to Ground All Pins except
A9, OE, RESET *1, *2
WP/ACC * *
*1 : Voltage is defined on the basis of VSS = GND = 0 V.
*2 : Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may
undershoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V.
During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods of up to 20 ns.
*3 : Minimum DC input voltage on A9, OE and RESET pins is –0.5 V. During voltage transitions, A9, OE
and RESET pins may undershoot VSS to –2.0 V for periods of up to 20 ns. Voltage difference between
input and supply voltage (VIN–VCC) does not exceed 9.0 V. Maximum DC input voltage on A9, OE and
RESET pins is +13.0 V which may overshoot to +14.0 V for periods of up to 20 ns.
*4 : Minimum DC input voltage on WP/ACC pin is –0.5 V. During voltage transitions, WP/ACC pin may
undershoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC input voltage on WP/ACC pin
is +10.5 V which may overshoot to +12.0 V for periods of up to 20 ns when Vcc is applied.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Conditions
Value
Min
Max
Unit
Ambient Temperature
TA
MBM29DL16XTE/BE70/90
–40
+85
°C
Power Supply Voltage*
VCC
MBM29DL16XTE/BE70/90
+2.7
+3.6
V
* : Voltage is defined on the basis of VSS = GND = 0 V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
43
MBM29DL16XTE/BE70/90
■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT
+0.6 V
20 ns
20 ns
–0.5 V
–2.0 V
20 ns
Maximum Undershoot Waveform
20 ns
V CC +2.0 V
V CC +0.5 V
+2.0 V
20 ns
20 ns
Maximum Overshoot Waveform 1
20 ns
+14.0 V
+13.0 V
V CC +0.5 V
20 ns
20 ns
Note: This waveform is applied for A9, OE, and RESET.
Maximum Overshoot Waveform 2
44
MBM29DL16XTE/BE70/90
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Symbol
Value
Conditions
Min
Typ
Max
Unit
Input Leakage Current
ILI
VIN = VSS to VCC, VCC = VCC Max
–1.0
—
+1.0
µA
Output Leakage Current
ILO
VOUT = VSS to VCC, VCC = VCC Max
–1.0
—
+1.0
µA
A9, OE, RESET Inputs Leakage
Current
ILIT
VCC = VCC Max,
A9, OE, RESET = 12.5 V
—
—
+35
µA
WP/ACC Accelerated Program
Current
ILIA
VCC = VCC Max,
WP/ACC = VACC Max
—
—
20
mA
—
13
—
15
—
7
—
7
CE = VIL, OE = VIH,
f = 5 MHz
VCC Active Current *1
ICC1
CE = VIL, OE = VIH,
f = 1 MHz
Byte
Word
Byte
Word
—
—
mA
mA
VCC Active Current *2
ICC2
CE = VIL, OE = VIH
—
—
35
mA
VCC Current (Standby)
ICC3
VCC = VCC Max, CE = VCC ± 0.3 V,
RESET = VCC ± 0.3 V,
WP/ACC = VCC ± 0.3 V
—
1
5
µA
VCC Current (Standby, Reset)
ICC4
VCC = VCC Max,
RESET = VSS ± 0.3 V
—
1
5
µA
VCC Current
(Automatic Sleep Mode) *5
ICC5
VCC = VCC Max, CE = VSS ± 0.3 V,
RESET = VCC ± 0.3 V,
VIN = VCC ± 0.3 V or VSS ± 0.3 V
—
1
5
µA
VCC Active Current *6
(Read-While-Program)
ICC6
CE = VIL, OE = VIH
Byte
—
—
48
Word
—
—
50
VCC Active Current *6
(Read-While-Erase)
ICC7
CE = VIL, OE = VIH
Byte
—
—
48
Word
—
—
50
VCC Active Current
(Erase-Suspend-Program)
ICC8
CE = VIL, OE = VIH
—
—
35
mA
Input Low Voltage
VIL
—
–0.5
—
+0.6
V
Input High Voltage
VIH
—
2.0
—
VCC+0.3
V
Voltage for Autoselect and Sector
Group Protection
(A9, OE, RESET) *3, *4
VID
—
11.5
12
12.5
V
Voltage for WP/ACC Sector
Group Protection/Unprotection
and Program Acceleration *4
VACC
—
8.5
9.0
9.5
V
Output Low Voltage
VOL
IOL = 4.0 mA, VCC = VCC Min
—
—
0.45
V
VOH1
IOH = –2.0 mA, VCC = VCC Min
2.4
—
—
V
VOH2
IOH = –100 µA
VCC –
0.4
—
—
V
2.3
2.4
2.5
V
Output High Voltage
Low VCC Lock-Out Voltage
VLKO
—
mA
mA
(Continued)
45
MBM29DL16XTE/BE70/90
(Continued)
*1 : The ICC current listed includes both the DC operating current and the frequency dependent component.
*2 : ICC active while Embedded Algorithm (program or erase) is in progress.
*3 : This timing is only for Sector Group Protection operation and Autoselect mode.
*4 : Applicable for only VCC.
*5 : Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*6 : Embedded Algorithm (program or erase) is in progress. (@5 MHz)
46
MBM29DL16XTE/BE70/90
2. AC Characteristics
• Read Only Operations Characteristics
Symbol
70
90
JEDEC
Standard
Conditions
Read Cycle Time
tAVAV
tRC
—
Address to Output Delay
tAVQV
tACC
CE = VIL
OE = VIL

70

90
ns
Chip Enable to Output Delay
tELQV
tCE
OE = VIL

70

90
ns
Output Enable to Output Delay
tGLQV
tOE
—

30

35
ns
Chip Enable to Output High-Z
tEHQZ
tDF
—

25

30
ns
Output Enable to Output High-Z
tGHQZ
tDF
—

25

30
ns
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
tAXQX
tOH
—
0

0

ns
RESET Pin Low to Read Mode
—
tREADY
—

20

20
µs
CE to BYTE Switching Low or High
—
tELFL
tELFH
—

5

5
ns
Parameter
Unit
Min
Max
Min
Max
70

90

ns
Note: Test Conditions:
Output Load: 1 TTL gate and 30 pF (MBM29DL16XTE/BE70)
1 TTL gate and 100 pF (MBM29DL16XTE/BE90)
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or 3.0 V
Timing measurement reference level
Input: 1.5 V
Output:1.5 V
3.3 V
Diode = 1N3064
or Equivalent
Device
Under
Test
2.7 kΩ
6.2 kΩ
CL
Diode = 1N3064
or Equivalent
Note : CL = 30 pF including jig capacitance (MBM29DL16XTE/BE70)
CL = 100 pF including jig capacitance (MBM29DL16XTE/BE90)
Test Conditions
47
MBM29DL16XTE/BE70/90
• Write/Erase/Program Operations
Symbol
Parameter
70
90
Standard
Min
Write Cycle Time
tAVAV
tWC
70


90


ns
Address Setup Time
tAVWL
tAS
0


0


ns
—
tASO
12


15


ns
tWLAX
tAH
45


45


ns
—
tAHT
0


0


ns
Data Setup Time
tDVWH
tDS
30


35


ns
Data Hold Time
tWHDX
tDH
0


0


ns
—
tOEH
0


0


ns
10


10


ns
CE High During Toggle Bit Polling
—
tCEPH
20


20


ns
OE High During Toggle Bit Polling
—
tOEPH
20


20


ns
Read Recover Time Before Write
tGHWL
tGHWL
0


0


ns
Read Recover Time Before Write
tGHEL
tGHEL
0


0


ns
CE Setup Time
tELWL
tCS
0


0


ns
WE Setup Time
tWLEL
tWS
0


0


ns
CE Hold Time
tWHEH
tCH
0


0


ns
WE Hold Time
tEHWH
tWH
0


0


ns
Write Pulse Width
tWLWH
tWP
35


35


ns
CE Pulse Width
tELEH
tCP
35


35


ns
Write Pulse Width High
tWHWL
tWPH
25


30


ns
CE Pulse Width High
tEHEL
tCPH
25


30


ns
tWHWH1
tWHWH1

8


8

µs

16


16

µs
tWHWH2
tWHWH2

1


1

s
VCC Setup Time
—
tVCS
50


50


µs
Rise Time to VID *2
—
tVIDR
500


500


ns
—
tVACCR
500


500


ns
—
tVLHT
4


4


µs
—
tWPP
100


100


µs
—
tOESP
4


4


µs
CE Setup Time to WE Active *
—
tCSP
4


4


µs
Recover Time From RY/BY
—
tRB
0


0


ns
Address Setup Time to OE Low During Toggle
Bit Polling
Address Hold Time
Address Hold Time from CE or OE High During
Toggle Bit Polling
Read
Output Enable
Hold Time
Toggle and Data Polling
Byte
Programming Operation
Sector Erase Operation*
Rise Time to V
Word
1
ACC 3
*
Voltage Transition Time*
2
Write Pulse Width*2
OE Setup Time to WE Active*2
2
Typ Max
Min
Typ Max
Unit
JEDEC
(Continued)
48
MBM29DL16XTE/BE70/90
(Continued)
Symbol
Parameter
70
90
Typ Max
Min
Typ Max
Unit
JEDEC
Standard
Min
RESET Pulse Width
—
tRP
500


500


ns
RESET High Level Period Before Read
—
tRH
200


200


ns
BYTE Switching Low to Output High-Z
—
tFLQZ


25


30
ns
BYTE Switching High to Output Active
—
tFHQV


70


90
ns
Program/Erase Valid to RY/BY Delay
—
tBUSY


90


90
ns
Delay Time from Embedded Output Enable
—
tEOE


70


90
ns
Erase Time-out Time
—
tTOW


50


50
µs
Erase Suspend Transition Time
—
tSPD


20


20
µs
*1 : This does not include preprogramming time.
*2 : This timing is for Sector Group Protection operation.
*3 : This timing is limited for Accelerated Protection operation.
■ ERASE AND PROGRAMMING PERFORMANCE
Value
Unit
Parameter
Min
Typ
Max
Sector Erase Time
—
1
10
s
Word Programming Time
—
16
360
µs
Byte Programming Time
—
8
300
µs
Chip Programming Time
—
—
50
s
100,000
—
—
cycle
Program/Erase Cycle
Comments
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
49
MBM29DL16XTE/BE70/90
■ PIN CAPACITANCE
1. TSOP(1) pin capacitance
Value
Parameter
Input Capacitance
Symbol
CIN
Condition
Unit
Min
Typ
Max
VIN = 0

6.0
7.5
pF
Output Capacitance
COUT
VOUT = 0

8.5
12.0
pF
Control Pin Capacitance
CIN2
VIN = 0

8.0
10.0
pF
WP/ACC Pin Capacitance
CIN3
VIN = 0

17.0
18.0
pF
Notes : • Test conditions TA = +25°C, f = 1.0 MHz
• DQ15/A-1 pin capacitance is stipulated by output capacitance.
2. FBGA pin capacitance
Parameter
Input Capacitance
Symbol
CIN
Condition
Unit
Min
Typ
Max
VIN = 0

7.0
9.0
pF
Output Capacitance
COUT
VOUT = 0

9.5
13.0
pF
Control Pin Capacitance
CIN2
VIN = 0

9.0
11.0
pF
WP/ACC Pin Capacitance
CIN3
VIN = 0

17.0
18.0
pF
Notes : • Test conditions TA = +25°C, f = 1.0 MHz
• DQ15/A-1 pin capacitance is stipulated by output capacitance.
50
Value
MBM29DL16XTE/BE70/90
■ TIMING DIAGRAM
• Key to Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Must Be
Steady
Will Be
Steady
May
Change
from H to L
Will Be
Changing
from H to L
May
Change
from L to H
Will Be
Changing
from L to H
“H” or “L”
Any Change
Permitted
Changing
State
Unknown
Does Not
Apply
Center Line is
HighImpedance
“Off” State
(1) AC Waveforms for Read Operations
tRC
Address
Address Stable
tACC
CE
tDF
tOE
OE
tOEH
WE
tCE
Outputs
High-Z
tOH
Output Valid
High-Z
51
MBM29DL16XTE/BE70/90
(2) AC Waveforms for Hardware Reset/Read Operations
tRC
Address
Address Stable
tACC
tRH
CE
tRP
tRH
tCE
RESET
tOH
High-Z
Outputs
Output Valid
(3) AC Waveforms for Alternate WE Controlled Program Operations
Data Polling
3rd Bus Cycle
Address
555h
PA
tWC
tAS
PA
tRC
tAH
CE
tCS
tCH
tCE
OE
tGHWL
tWP
tWPH
tOE
tWHWH1
WE
tOH
tDF
tDS
tDH
Data
A0h
PD
DQ7
DOUT
DOUT
Notes : • PA is address of the memory location to be programmed.
• PD is data to be programmed at byte address.
• DQ7 is the output of the complement of the data written to the device.
• DOUT is the output of the data written to the device.
• Figure indicates the last two bus cycles out of four bus cycle sequence.
• These waveforms are for the × 16 mode. These address differ from × 8 mode.
52
MBM29DL16XTE/BE70/90
(4) AC Waveforms for Alternate CE Controlled Program Operations
3rd Bus Cycle
Address
Data Polling
PA
555h
tWC
tAS
PA
tAH
WE
tWS
tWH
OE
tGHEL
tCP
tCPH
tWHWH1
CE
tDS
tDH
Data
A0h
PD
DQ7
DOUT
Notes : • PA is address of the memory location to be programmed.
• PD is data to be programmed at byte address.
• DQ7 is the output of the complement of the data written to the device.
• DOUT is the output of the data written to the device.
• Figure indicates the last two bus cycles out of four bus cycle sequence.
• These waveforms are for the × 16 mode. These address differ from × 8 mode.
53
MBM29DL16XTE/BE70/90
(5) AC Waveforms for Chip/Sector Erase Operations
Address
2AAh
555h
tWC
tAS
555h
555h
2AAh
SA*
tAH
CE
tCS
tCH
OE
tGHWL
tWP
tWPH
tDS
tDH
WE
AAh
Data
10h for Chip Erase
55h
80h
AAh
55h
tVCS
VCC
* : SA is the sector address for Sector Erase. Addresses = 555h (Word) for Chip Erase.
Note : These waveforms are for the ×16 mode. The addresses differ from ×8 mode.
54
10h/
30h
MBM29DL16XTE/BE70/90
(6) AC Waveforms for Data Polling during Embedded Algorithm Operations
CE
tCH
tOE
tDF
OE
tOEH
WE
tCE
*
DQ7
Data
DQ7
DQ7 =
Valid Data
High-Z
tWHWH1 or tWHWH2
DQ6 to DQ0
Data
DQ6 to DQ0 = Output Flag
tBUSY
DQ6 to DQ0
Valid Data
High-Z
tEOE
RY/BY
* : DQ7 = Valid Data (The device has completed the Embedded operation).
55
MBM29DL16XTE/BE70/90
(7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations
Address
tAHT tASO
tAHT tAS
CE
tCEPH
WE
tOEPH
tOEH
tOEH
OE
tDH
DQ6/DQ2
tOE
Toggle
Data
Data
tCE
Toggle
Data
Toggle
Data
*
Stop
Toggling
tBUSY
RY/BY
* : DQ6 stops toggling (The device has completed the Embedded operation).
56
Output
Valid
MBM29DL16XTE/BE70/90
(8) Bank-to-bank Read/Write Timing Diagram
Read
Command
Read
Command
Read
Read
tRC
tWC
tRC
tWC
tRC
tRC
BA1
BA2
(555h)
BA1
BA2
(PA)
BA1
BA2
(PA)
Address
tAS
tACC
tAH
tAS
tAHT
tCE
CE
tOE
tCEPH
OE
tGHWL
tDF
tOEH
tWP
WE
tDS
Valid
Output
DQ
tDH
Valid
Intput
(A0h)
tDF
Valid
Output
Valid
Intput
(PD)
Valid
Output
Status
Note: This is the example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2.
BA1: Address corresponding to Bank 1.
BA2: Address corresponding to Bank 2.
(9) DQ2 vs. DQ6
Enter
Embedded
Erasing
WE
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2*
Toggle
DQ2 and DQ6
with OE or CE
* : DQ2 is read from the erase-suspended sector.
57
MBM29DL16XTE/BE70/90
(10) RY/BY Timing Diagram during Program/Erase Operations
CE
Rising edge of the last write pulse
WE
Entire programming
or erase operations
RY/BY
tBUSY
(11) RESET, RY/BY Timing Diagram
WE
RESET
tRP
tRB
RY/BY
tREADY
(12) Timing Diagram for Word Mode Configuration
CE
tCE
BYTE
Data Output
(DQ7 to DQ0)
DQ14 to DQ0
Data Output
(DQ14 to DQ0)
tELFH
tFHQV
DQ15/A-1
58
A-1
DQ15
MBM29DL16XTE/BE70/90
(13) Timing Diagram for Byte Mode Configuration
CE
BYTE
tELFL
DQ14 to DQ0
Data Output
(DQ14 to DQ0)
Data Output
(DQ7 to DQ0)
tACC
DQ15/A-1
DQ15
A-1
tFLQZ
(14) BYTE Timing Diagram for Write Operations
Falling edge of the last write signal
CE or WE
Input
Valid
BYTE
tAS
tAH
59
MBM29DL16XTE/BE70/90
(15) AC Waveforms for Sector Group Protection
A19, A18, A17
A16, A15, A14
A13, A12
SPAX
SPAY
A6, A0
A1
VID
VIH
A9
tVLHT
VID
VIH
tOESP
OE
tWPP
tVLHT
tVLHT
tVLHT
WE
tCSP
CE
Data
01h
tVCS
VCC
SPAX : Sector Group Address to be protected
SPAY : Next Sector Group Address to be protected
Note: A-1 is VIL on byte mode.
60
tOE
MBM29DL16XTE/BE70/90
(16) Temporary Sector Group Unprotection Timing Diagram
VCC
tVIDR
tVCS
tVLHT
VID
VIH
RESET
CE
WE
tVLHT
Program or Erase Command Sequence
tVLHT
RY/BY
Unprotection period
61
MBM29DL16XTE/BE70/90
(17) Extended Sector Group Protection Timing Diagram
VCC
tVCS
VID
tVLHT
RESET
tVIDR
tWC
Address
tWC
SPAX
SPAX
SPAY
A6, A0
A1
CE
OE
TIME-OUT
tWP
WE
Data
60h
60h
40h
01h
tOE
SPAX : Sector Group Address to be protected
SPAY : Next Sector Group Address to be protected
TIME-OUT : Time-Out window = 250 µs (Min)
Note : A-1 is VIL on byte mode.
62
60h
MBM29DL16XTE/BE70/90
(18) Accelerated Program Timing Diagram
VCC
tVACCR
tVCS
tVLHT
VACC
VIH
WP/ACC
CE
WE
tVLHT
Program Command Sequence
tVLHT
RY/BY
Acceleration period
63
MBM29DL16XTE/BE70/90
■ FLOW CHART
(1) Embedded ProgramTM Algorithm
EMBEDDED ALGORITHMS
Start
Write Program
Command Sequence
(See below)
Data Polling
No
Verify Data
?
Embedded
Program
Algorithm
in program
Yes
Increment Address
No
Last Address
?
Yes
Programming Completed
Program Command Sequence (Address/Command):
555h/AAh
2AAh/55h
555h/A0h
Program Address/Program Data
Notes : • The sequence is applied for × 16 mode.
• The addresses differ from × 8 mode.
64
MBM29DL16XTE/BE70/90
(2) Embedded EraseTM Algorithm
EMBEDDED ALGORITHMS
Start
Write Erase
Command Sequence
(See below)
Data Polling
No
Embedded
Program
Algorithm
in program
Data = FFh
?
Yes
Erasure Completed
Chip Erase Command Sequence
(Address/Command):
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command):
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
555h/80h
555h/80h
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
555h/10h
Sector Address/30h
Sector Address/30h
Additional sector
erase commands
are optional.
Sector Address/30h
Notes : • The sequence is applied for × 16 mode.
• The addresses differ from × 8 mode.
65
MBM29DL16XTE/BE70/90
(3) Data Polling Algorithm
Start
VA = Address for programming
= Any of the sector addresses within
the sector being erased during
sector erase or multiple sector
erases operation.
= Any of the sector addresses within
the sector not being protected
during chip erase operation.
Read Byte
(DQ7 to DQ0)
Addr. = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read Byte
(DQ7 to DQ0)
Addr. = VA
DQ7 = Data?
*
Yes
No
Fail
Pass
* : DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
66
MBM29DL16XTE/BE70/90
(4) Toggle Bit Algorithm
Start
Read
DQ7 to DQ0
Addr. = VA
*1
Read
DQ7 to DQ0
Addr. = VA
*1
DQ6
= Toggle
?
VA = Bank address being executed
Embedded Algorithm.
No
Yes
No
DQ 5 = 1?
Yes
Read DQ7 to DQ0
Addr. = VA
*1, *2
Read DQ7 to DQ0 *1, *2
Addr. = VA
DQ6
= Toggle
?
Yes
Program/Erase
Operation Not
Complete. Write
Reset Command
No
Program/Erase
Operation
Complete
*1 : Read toggle bit twice to determine whether it is toggling.
*2 : Recheck toggle bit because it may stop toggling as DQ5 changing to “1”.
67
MBM29DL16XTE/BE70/90
(5) Sector Group Protection Algorithm
Start
Setup Sector Group Addr.
(A19, A18, A17, A16, A15, A14, A13, A12)
PLSCNT = 1
OE = VID, A9 = VID,
CE = VIL, RESET = VIH
A6 = A0 = VIL, A1 = VIH
Activate WE Pulse
Time out 100 µs
Increment PLSCNT
WE = V IH, CE = OE = V IL
(A 9 should remain V ID)
Read from Sector Group
(Addr. = SPA, A1 = VIH,
A6 = V0 = VIL) *
No
No
PLSCNT = 25?
Yes
Data = 01h?
Yes
Yes
Remove VID from A9
Write Reset Command
Protect Another Sector
Group ?
No
Device Failed
Remove VID from A9
Write Reset Command
Sector Group Protection
Completed
* : A-1 is V IL on byte mode.
68
MBM29DL16XTE/BE70/90
(6) Temporary Sector Group Unprotection Algorithm
Start
RESET = VID *1
Perform Erase or
Program Operations
RESET = VIH
Temporary Sector Group
Unprotection Completed*2
*1 : All protected sector groups are unprotected.
*2 : All previously protected sector groups are protected once again.
69
MBM29DL16XTE/BE70/90
(7) Extended Sector Group Protection Algorithm
Start
RESET = VID
Wait to 4 µs
Device is Operating in
Temporary Sector Group
Unprotection Mode
No
Extended Sector Group
Protection Entry?
Yes
To Setup Sector Group
Protection Write XXXh/60h
PLSCNT = 1
To Sector Group Protection
Write 60h to Sector Address
(A6 = A0 = VIL, A1 = VIH)
Time out 250 µs
Increment PLSCNT
To Verify Sector Group Protection
Write 40h to Sector Address
(A6 = A0 = VIL, A1 = VIH)
Read from Sector Group
Address (Addr. = SPA,
A6 = A0 = VIL, A1 = VIH)
No
No
PLSCNT = 25?
Yes
Remove VID from RESET
Write Reset Command
Data = 01h?
Yes
Protection Other Sector
Group?
No
Device Failed
Remove VID from RESET
Write Reset Command
Sector Group Protection
Completed
70
Yes
Setup Next Sector Group
Address
MBM29DL16XTE/BE70/90
(8) Embedded ProgramTM Algorithm for Fast Mode
FAST MODE ALGORITHM
Start
555h/AAh
2AAh/55h
Set Fast Mode
555h/20h
XXXh/A0h
Program Address/Program Data
Data Polling
Verify Data
?
No
In Fast Program
Yes
Increment Address
No
Last Address
?
Yes
Programming Completed
(BA)XXXh/90h
Reset Fast Mode
XXXh/F0h
Notes: • The sequence is applied for × 16 mode.
• The addresses differ from × 8 mode.
71
MBM29DL16XTE/BE70/90
■ ORDERING INFORMATION
Part No.
MBM29DL161TE-70TN
MBM29DL161TE-90TN
MBM29DL162TE-70TN
MBM29DL162TE-90TN
MBM29DL163TE-70TN
MBM29DL163TE-90TN
MBM29DL164TE-70TN
MBM29DL164TE-90TN
MBM29DL161TE-70TR
MBM29DL161TE-90TR
MBM29DL162TE-70TR
MBM29DL162TE-90TR
MBM29DL163TE-70TR
MBM29DL163TE-90TR
MBM29DL164TE-70TR
MBM29DL164TE-90TR
MBM29DL161TE-70PBT
MBM29DL161TE-90PBT
MBM29DL162TE-70PBT
MBM29DL162TE-90PBT
MBM29DL163TE-70PBT
MBM29DL163TE-90PBT
MBM29DL164TE-70PBT
MBM29DL164TE-90PBT
MBM29DL161BE-70TN
MBM29DL161BE-90TN
MBM29DL162BE-70TN
MBM29DL162BE-90TN
MBM29DL163BE-70TN
MBM29DL163BE-90TN
MBM29DL164BE-70TN
MBM29DL164BE-90TN
MBM29DL161BE-70TR
MBM29DL161BE-90TR
MBM29DL162BE-70TR
MBM29DL162BE-90TR
MBM29DL163BE-70TR
MBM29DL163BE-90TR
MBM29DL164BE-70TR
MBM29DL164BE-90TR
MBM29DL161BE-70PBT
MBM29DL161BE-90PBT
MBM29DL162BE-70PBT
MBM29DL162BE-90PBT
MBM29DL163BE-70PBT
MBM29DL163BE-90PBT
MBM29DL164BE-70PBT
MBM29DL164BE-90PBT
72
Package
48-pin plastic TSOP (1)
(FPT-48P-M19)
Normal Bend
48-pin plastic TSOP (1)
(FPT-48P-M20)
Reverse Bend
48-pin plastic FBGA
(BGA-48P-M11)
48-pin plastic TSOP (1)
(FPT-48P-M19)
Normal Bend
48-pin plastic TSOP (1)
(FPT-48P-M20)
Reverse Bend
48-pin plastic FBGA
(BGA-48P-M11)
Access Tome
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
70
90
Remarks
Top Sector
Bottom Sector
MBM29DL16XTE/BE70/90
MBM29DL16X
T
E
70
TN
PACKAGE TYPE
TN = 48-Pin Thin Small Outline Package
(TSOP) Standard Pinout
TR = 48-Pin Thin Small Outline Package
(TSOP) Reverse Pinout
PBT = 48-Pin Fine pitch Ball Grid Array
Package (FBGA)
SPEED OPTION
See Product Selector Guide
DEVICE REVISION
BOOT CODE SECTOR ARCHITECTURE
T = Top sector
B = Bottom sector
DEVICE NUMBER/DESCRIPTION
MBM29DL16X
16 Mega-bit (2 M × 8-Bit or 1 M × 16-Bit) CMOS Flash Memory
3.0 V-only Read, Program, and Erase
73
MBM29DL16XTE/BE70/90
■ PACKAGE DIMENSIONS
Note 1) * : Values do not include resin protrusion.
Resin protrusion and gate protrusion are +0.15 (.006) Max (each side) .
Note 2) Pins width and pins thickness include plating thickness.
Note 3) Pins width do not include tie bar cutting remainder.
48-pin plastic TSOP(1)
(FPT-48P-M19)
LEAD No.
1
48
INDEX
Details of "A" part
0.25(.010)
0~8˚
0.60±0.15
(.024±.006)
24
25
* 12.00±0.20
20.00±0.20
(.787±.008)
(.472±.008)
+0.10
* 18.40±0.20
1.10 –0.05
+.004
(.724±.008)
"A"
.043 –.002
(Mounting
height)
+0.03
0.22±0.05
(.009±.002)
0.17 –0.08
+.001
.007 –.003
C
2003 FUJITSU LIMITED F48029S-c-6-7
0.10±0.05
(.004±.002)
(Stand off height)
0.50(.020)
0.10(.004)
0.10(.004)
M
Dimensions in mm (inches).
Note : The values in parentheses are reference values.
Note 1) * : Values do not include resin protrusion.
Resin protrusion and gate protrusion are +0.15 (.006) Max (each side) .
Note 2) Pins width and pins thickness include plating thickness.
Note 3) Pins width do not include tie bar cutting remainder.
48-pin plastic TSOP(1)
(FPT-48P-M20)
LEAD No.
1
48
Details of "A" part
INDEX
0.60±0.15
(.024±.006)
0~8˚
0.25(.010)
24
25
+0.03
0.17 –0.08
+.001
0.10(.004)
.007 –.003
0.50(.020)
0.22±0.05
(.009±.002)
M
0.10±0.05
(.004±.002)
(Stand off height)
+0.10
"A"
1.10 –0.05
+.004
* 18.40±0.20
(.724±.008)
20.00±0.20
(.787±.008)
C
0.10(.004)
2003 FUJITSU LIMITED F48030S-c-6-7
.043 –.002
(Mounting height)
* 12.00±0.20(.472±.008)
Dimensions in mm (inches).
Note : The values in parentheses are reference values.
(Continued)
74
MBM29DL16XTE/BE70/90
(Continued)
48-pin plastic FBGA
(BGA-48P-M11)
+0.15
8.00±0.20(.315±.008)
+.006
1.05 –0.10 .041 –.004
(Mounting height)
0.38±0.10(.015±.004)
(Stand off)
(5.60(.220))
0.80(.031)TYP
6
5
INDEX
6.00±0.20
(.236±.008)
4
(4.00(.157))
3
2
1
H
C0.25(.010)
G
F
E
D
48-ø0.45±0.10
(48-ø.018±.004)
C
B
A
ø0.08(.003)
M
0.10(.004)
C
2001 FUJITSU LIMITED B48011S-c-5-3
Dimensions in mm (inches).
Note : The values in parentheses are reference values.
75
MBM29DL16XTE/BE70/90
FUJITSU LIMITED
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information, such as descriptions of function and application
circuit examples, in this document are presented solely for the
purpose of reference to show examples of operations and uses of
Fujitsu semiconductor device; Fujitsu does not warrant proper
operation of the device with respect to use based on such
information. When you develop equipment incorporating the
device based on such information, you must assume any
responsibility arising out of such use of the information. Fujitsu
assumes no liability for any damages whatsoever arising out of
the use of the information.
Any information in this document, including descriptions of
function and schematic diagrams, shall not be construed as license
of the use or exercise of any intellectual property right, such as
patent right or copyright, or any other right of Fujitsu or any third
party or does Fujitsu warrant non-infringement of any third-party’s
intellectual property right or other right by using such information.
Fujitsu assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result
from the use of information contained herein.
The products described in this document are designed, developed
and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
personal injury, severe physical damage or other loss (i.e., nuclear
reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile
launch control in weapon system), or (2) for use requiring
extremely high reliability (i.e., submersible repeater and artificial
satellite).
Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Law of Japan, the prior
authorization by Japanese government will be required for export
of those products from Japan.
F0311
 FUJITSU LIMITED Printed in Japan