SPANSION MBM29PL32TM90TN

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20907-3E
FLASH MEMORY
CMOS
32 M (4M × 8/2M × 16) BIT
MirrorFlashTM*
MBM29PL32TM/BM 90/10
■ DESCRIPTION
The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by
16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be
programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or
erase operations. The devices can also be reprogrammed in standard EPROM programmers.
(Continued)
■ PRODUCT LINE UP
Part No.
MBM29PL32TM/BM
90
10
3.0 V to 3.6 V
3.0 V to 3.6 V
Max Address Access Time
90 ns
100 ns
Max CE Access Time
90 ns
100 ns
Max Page Read Access Time
25 ns
30 ns
VCC
■ PACKAGES
48-pin plastic TSOP (1)
48-ball plastic FBGA
(FPT-48P-M19)
(BGA-48P-M20)
* : MirrorFlashTM is a trademark of Fujitsu Limited.
Notes : • Programming in byte mode ( × 8) is prohibited.
• Programming to the address that already contains data is prohibited.
(It is mandatory to erase data prior to overprogram on the same address.)
MBM29PL32TM/BM90/10
(Continued)
The standard MBM29PL32TM/BM offers access times of 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable
(WE), and output enable (OE) controls.
The MBM29PL32TM/BM supports command set compatible with JEDEC single-power-supply EEPROMS standard. Commands are written into the command register. The register contents serve as input to an internal statemachine which controls the erase and programming circuitry. Write cycles also internally latch addresses and
data needed for the programming and erase operations. Reading data out of the devices is similar to reading
from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29PL32TM/BM is programmed by executing the program command sequence. This will invoke the
Embedded Program AlgorithmTM which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Erase is accomplished by executing the erase command sequence. This will
invoke the Embedded Erase AlgorithmTM which is an internal algorithm that automatically preprograms the array
if it is not already programmed before executing the erase operation. During erase, the device automatically
times the erase pulse widths and verifies proper cell margin.
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. All sectors are erased when shipped from the factory.
The device features single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,
by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the devices
internally return to the read mode.
Fujitsu Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The devices electrically erase all bits within a sector simultaneously via hot-hole assisted erase. The words are programmed one word at a time using the EPROM programming mechanism of hot electron injection.
2
MBM29PL32TM/BM90/10
■ FEATURES
• 0.23 µm Process Technology
• Single 3.0 V read, program and erase
Minimizes system level power requirements
• Industry-standard pinouts
48-pin TSOP (1) (Package suffix: TN - Normal Bend Type)
48-ball FBGA(Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance Page mode
Fast 8 bytes / 4 words access capability
• Sector erase architecture
Eight 8K byte and sixty-three 64K byte sectors
Eight 4K word and sixty-three 32K word sectors
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• HiddenROM
256 bytes / 128 words of HiddenROM, accessible through a “HiddenROM Entry” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At VIL, allows protection of outermost two 8K bytes / 4K words sectors, regardless of sector protection/unprotection status
At VACC, increases program performance
• Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Program Suspend/Resume
Suspends the program operation to allow a read in another address
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector Group Protection
Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin
This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)
* : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
3
MBM29PL32TM/BM90/10
■ PIN ASSIGNMENTS
48-pin Plastic TSOP(1)
(Top View)
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE
RESET
N.C.
WP/ACC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
(Marking Side)
(FPT-48P-M19)
48-ball plastic FBGA
(Top View)
Marking Side
A6
B6
C6
D6
E6
A13
A12
A14
A15
A16
A5
B5
C5
D5
A9
A8
A10
A11
A4
B4
C4
WE RESET N.C.
A3
B3
RY/BY WP/
ACC
D4
A19
C3
D3
A18
A20
E5
F6
H6
F5
G5
H5
DQ7 DQ14 DQ13 DQ6
E4
F4
DQ5 DQ12
E3
F3
G4
H4
VCC
DQ4
G3
H3
DQ2 DQ10 DQ11 DQ3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE
OE
VSS
(BGA-48P-M20)
4
G6
BYTE DQ15/ VSS
A-1
A16
BYTE
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
VSS
CE
A0
MBM29PL32TM/BM90/10
■ PIN DESCRIPTIONS
MBM29PL32TM/BM Pin Configuration
Pin
Function
A20 to A0, A-1
Address Inputs
DQ15 to DQ0
Data Inputs/Outputs
CE
Chip Enable
OE
Output Enable
WE
Write Enable
WP/ACC
RESET
Hardware Write Protection/Program Acceleration
Hardware Reset Pin/Temporary Sector Group Unprotection
BYTE
Select Byte or Word mode
RY/BY
Ready/Busy Output
VCC
Device Power Supply
VSS
Device Ground
N.C.
No Internal Connection
5
MBM29PL32TM/BM90/10
■ BLOCK DIAGRAM
DQ15 to DQ0
VCC
VSS
WE
RESET
Input/Output
Buffers
Erase Voltage
Generator
State
Control
WP/ACC
BYTE
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
CE
OE
STB
Timer for
Program/Erase
Address
Latch
Y-Gating
X-Decoder
Cell Matrix
A1, A0
(A-1)
■ LOGIC SYMBOL
A-1
21
A20 to A0
16 or 8
DQ 15 to DQ 0
OE
WE
WP/ACC
RESET
BYTE
6
RY/BY
Data Latch
Y-Decoder
A20 to A2
CE
STB
MBM29PL32TM/BM90/10
■ DEVICE BUS OPERATION
MBM29PL32TM/BM User Bus Operations (Word Mode : BYTE = VIH)
Operation
CE OE WE
A0
A1
A2
A3
A6
A9
DQ0 to
DQ15
RESET
WP/
ACC
Standby
H
X
X
X
X
X
X
X
X
Hi-Z
H
X
Autoselect Manufacture Code*1
L
L
H
L
L
L
L
L
VID
Code
H
X
Autoselect Device Code*1
L
L
H
H
L
L
L
L
VID
Code
H
X
Read
L
L
H
A0
A1
A2
A3
A6
A9
DOUT
H
X
Output Disable
L
H
H
X
X
X
X
X
X
Hi-Z
H
X
Write (Program/Erase)
L
H
L
A0
A1
A2
A3
A6
A9
*3
H
*4
Enable Sector Group Protection*2
L
H
L
L
H
L
L
L
X
*3
VID
H
Temporary Sector Group
Unprotection
X
X
X
X
X
X
X
X
X
*3
VID
H
Reset (Hardware)
X
X
X
X
X
X
X
X
X
Hi-Z
L
X
Sector Write Protection
X
X
X
X
X
X
X
X
X
X
H
L
Legend : L = VIL, H = VIH, X = VIL or VIH. See “■ ELECTRICAL CHARACTERISTICS 1. DC Characteristics” for
voltage levels.
Hi-Z = High-Z, VID = 11.5 V to 12.5 V
*1 : Manufacturer and device codes may also be accessed via a command register write sequence.
See “Sector Group Protection Verify Autoselect Codes”.
*2 : Refer to “Sector Group Protection” in ■ FUNCTIONAL DESCRIPTION.
*3 : DIN or DOUT as required by command sequence, data pulling, or sector protect algorithm
*4 : If WP/ACC = VIL, the outermost two sectors remain protected.
If WP/ACC = VIH, the outermost two sectors will be protected or unprotected as determined by the method
specified in “Sector Group Protection” in ■ FUNCTIONAL DESCRIPTION.
7
MBM29PL32TM/BM90/10
MBM29PL32TM/BM User Bus Operations (Byte Mode : BYTE = VIL)
Operation
CE OE WE
DQ15/
A0
A-1
A1
A2
A3
A6 A9
DQ0 to
WP/
RESET
DQ7
ACC
Standby
H
X
X
X
X
X
X
X
X
X
Hi-Z
H
X
Autoselect Manufacture Code*1
L
L
H
L
L
L
L
L
L
VID
Code
H
X
Autoselect Device Code*1
L
L
H
L
H
L
L
L
L
VID
Code
H
X
Read
L
L
H
A-1
A0
A1
A2
A3
A6
A9
DOUT
H
X
Output Disable
L
H
H
X
X
X
X
X
X
X
Hi-Z
H
X
Write (Erase)
L
H
L
A-1
A0
A1
A2
A3
A6
A9
*3
H
*4
Enable Sector Group Protection*2
L
H
L
L
L
H
L
L
L
X
*3
VID
H
Temporary Sector Group
Unprotection
X
X
X
X
X
X
X
X
X
X
*3
VID
H
Reset (Hardware)
X
X
X
X
X
X
X
X
X
X
Hi-Z
L
X
Sector Write Protection
X
X
X
X
X
X
X
X
X
X
X
H
L
Legend : L = VIL, H = VIH, X = VIL or VIH. See “■ ELECTRICAL CHARACTERISTICS 1. DC Characteristics” for
voltage levels.
Hi-Z = High-Z, VID = 11.5 V to 12.5 V
*1 : Manufacturer and device codes may also be accessed via a command register write sequence.
See “MBM29PL32TM/BM Standard Command Definitions”.
*2 : Refer to “Sector Group Protection”.
*3 : DIN or DOUT as required by command sequence, data pulling, or sector protect algorithm
*4 : If WP/ACC = VIL, the outermost two sectors remain protected.
If WP/ACC = VIH, the outermost two sectors will be protected or unprotected as determined by the method
specified in “Sector Group Protection” in page 23.
8
MBM29PL32TM/BM90/10
MBM29PL32TM/BM Standard Command Definitions*1
First Bus Second Bus Third Bus
Bus
Write Write Cycle Write Cycle Write Cycle
Cycles
Req'd
Command
Sequence
Addr Data Addr
Reset*2
Reset*2
Autoselect
Program
Chip Erase
Sector Erase
Word/
Byte
Word
Byte
Word
Byte
Word
Word
Byte
Word
Byte
1
3
3
4
6
6
XXXh F0h
555h
AAAh
555h
AAAh
555h
555h
AAAh
555h
AAAh
AAh
AAh
—
2AAh
555h
2AAh
555h
AAh 2AAh
AAh
AAh
2AAh
555h
2AAh
555h
Data
—
55h
55h
55h
55h
55h
Fourth Bus
Read/Write
Cycle
Addr Data Addr
—
555h
AAAh
555h
AAAh
555h
555h
AAAh
555h
AAAh
—
—
—
—
RA*13 RD*13
—
—
—
—
90h 00h*13 04h*13
—
—
—
—
A0h
—
—
—
—
80h
80h
PA
555h
AAAh
555h
AAAh
—
Addr Data Addr Data
—
F0h
—
Data
Fifth Bus
Sixth Bus
Write Cycle Write Cycle
PD
AAh
AAh
2AAh
555h
2AAh
555h
55h
555h
AAAh
10h
55h
SA
30h
Program/Erase Suspend*3
1
XXXh B0h
—
—
—
—
—
—
—
—
—
—
Program/Erase Resume*3
1
XXXh 30h
—
—
—
—
—
—
—
—
—
—
20h
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
55h
SA
25h
SA
0Fh
PA
PD
WBL
PD
—
—
—
—
—
—
—
—
—
F0h
—
—
—
—
—
—
SD*13
—
—
—
—
Set to Fast Mode*4
Word
Byte
3
555h
AAAh
AAh
2AAh
555h
55h
Fast Program*4
Word
2
XXXh A0h
Reset from Fast
Mode*5
Word/
Byte
2
XXXh 90h XXXh 00h*12
Write to Buffer
Word
Byte
Program Buffer to Flash
(Confirm)
Write to Buffer Abort
Reset*6
Word
Extended Sector
Group Protection*7,*8
Word
Query*9
Byte
Byte
Word
Byte
HiddenROM
Entry*10
Word
HiddenROM
Program *10,*11
Word
HiddenROM Exit*11
Byte
Byte
Word
Byte
20
1
3
4
1
3
4
4
555h
AAAh
SA
AAh
29h
555h
AAAh
AAh
555h
AAAh
555h
AAAh
555h
AAAh
2AAh
555h
—
PD
2AAh
AAh
XXXh 60h
55h
PA
98h
AAh
AAh
AAh
555h
555h
AAAh
555h
55h
AAAh
SGA
SGA
60h
SGA
40h
—
—
—
—
—
—
—
—
—
—
88h
—
—
—
—
—
—
A0h
PA
PD
—
—
—
—
90h
XXXh
00h
—
—
—
—
2AAh
555h
2AAh
555h
2AAh
555h
55h
55h
55h
555h
AAAh
555h
AAAh
555h
AAAh
*13
(Continued)
9
MBM29PL32TM/BM90/10
(Continued)
Legend : Address bits A20 to A11 = X = “H” or “L” for all address commands except for Program Address (PA),
Sector Address (SA) and Sector Group Address (SGA).
Bus operations are defined in “MBM29PL32TM/BM User Bus Operations (Word Mode : BYTE = VIH)”
and “MBM29PL32TM/BM User Bus Operations (Byte Mode : BYTE = VIL)”.
RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of
the write pulse.
SA = Address of the sector to be programmed / erased. The combination of A20, A19, A18, A17, A16, A15,
A14, A13 and A12 will uniquely select any sector. See “Sector Address Table (MBM29PL32TM)”
and “Sector Address Table (MBM29PL32BM)”.
SGA = Sector Group Address to be protected. See “Sector Group Address Table (MBM29PL32TM)”
and “Sector Group Address Table (MBM29PL32BM)”.
RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of write plus.
WBL = Write Buffer Location
HRA = Address of the HiddenROM area ;
MBM29PL32TM (Top Boot Type)Word Mode : 1FFF7Fh to 1FFFFFh
Byte Mode : 3FFEFFh to 3FFFFFh
MBM29PL32BM (Bottom Boot Type)Word Mode : 000000h to 00007Fh
Byte Mode : 000000h to 0000FFh
*1 : The command combinations not described in “MBM29PL32TM/BM Standard Command Definitions” are
illegal.
*2 : Both of these reset commands are equivalent except for "Write to Buffer Abort" reset.
*3 : The Erase Suspend and Erase Resume command are valid only during a sector erase operation.
*4 : The Set to Fast Mode command is required prior to the Fast Program command.
*5 : The Reset from Fast Mode command is required to return to the read mode when the device is in fast mode.
*6 : Reset to the read mode. The Write to Buffer Abort Reset command is required after the Write to Buffer
operation was aborted.
*7 : This command is valid while RESET = VID.
*8 : Sector Group Address (SGA) with A6 = 0, A3 = 0, A2 = 0, A1 = 1, and A0 = 0
*9 : The valid address are A6 to A0.
*10 : The HiddenROM Entry command is required prior to the HiddenROM programming.
*11 : This command is valid during HiddenROM mode.
*12 : The data “F0h” is also acceptable.
*13 : Indicates read cycle.
10
MBM29PL32TM/BM90/10
Sector Group Protection Verify Autoselect Codes
Type
Manufacturer’s Code
Word
Device Code
Byte
Word
MBM29PL32TM
Extended
Device
Code*2
Byte
Word
Byte
Word
MBM29PL32BM
Byte
Word
Byte
Sector Group Protection*4
A20 to A12
A6
A3
A2
A1
A0
A-1*1
Code (HEX)
X
VIL
VIL
VIL
VIL
VIL
VIL
04h
X
VIL
VIL
VIL
VIL
VIH
X
227Eh
VIL
7Eh
X
VIL
VIH
VIH
VIH
VIL
X
221Ah
VIL
1Ah
X
VIL
VIH
VIH
VIH
VIH
X
2201h
VIL
01h
X
VIL
VIH
VIH
VIH
VIL
X
221Ah
VIL
1Ah
X
VIL
VIH
VIH
VIH
VIH
X
2200h
VIL
00h
Sector Group
Addresses
VIL
VIL
VIL
VIH
VIL
VIL
*3
*1 : A-1 is for Byte mode.
*2 : At Word mode, a read cycle at address 01h ( at Byte mode, 02h ) outputs device code. When 227Eh
( at Byte mode, 7Eh ) is output, it indicates that reading two additional codes, called Extended Device
Codes, will be required. Therefore the system may continue reading out these Extended Device
Codes at the address of 0Eh ( at Byte mode, 1Ch ), as well as at 0Fh ( at Byte mode, 1Eh ).
*3 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*4 : Toggle CE, provided SGA = fix and WE = fix.
The data in the first cycle is invalid. The data in the second one is valid.
11
MBM29PL32TM/BM90/10
Sector Address Table (MBM29PL32TM)
Sector Address
Sector
A20 A19 A18 A17 A16 A15 A14 A13 A12
Sector
Size
(Kbytes/
Kwords)
×8)
(×
Address Range
×16)
(×
Address Range
SA0
0
0
0
0
0
0
X
X
X
64/32
000000h to 00FFFFh
000000h to 007FFFh
SA1
0
0
0
0
0
1
X
X
X
64/32
010000h to 01FFFFh
008000h to 00FFFFh
SA2
0
0
0
0
1
0
X
X
X
64/32
020000h to 02FFFFh
010000h to 017FFFh
SA3
0
0
0
0
1
1
X
X
X
64/32
030000h to 03FFFFh
018000h to 01FFFFh
SA4
0
0
0
1
0
0
X
X
X
64/32
040000h to 04FFFFh
020000h to 027FFFh
SA5
0
0
0
1
0
1
X
X
X
64/32
050000h to 05FFFFh
028000h to 02FFFFh
SA6
0
0
0
1
1
0
X
X
X
64/32
060000h to 06FFFFh
030000h to 037FFFh
SA7
0
0
0
1
1
1
X
X
X
64/32
070000h to 07FFFFh
038000h to 03FFFFh
SA8
0
0
1
0
0
0
X
X
X
64/32
080000h to 08FFFFh
040000h to 047FFFh
SA9
0
0
1
0
0
1
X
X
X
64/32
090000h to 09FFFFh
048000h to 04FFFFh
SA10
0
0
1
0
1
0
X
X
X
64/32
0A0000h to 0AFFFFh
050000h to 057FFFh
SA11
0
0
1
0
1
1
X
X
X
64/32
0B0000h to 0BFFFFh
058000h to 05FFFFh
SA12
0
0
1
1
0
0
X
X
X
64/32
0C0000h to 0CFFFFh
060000h to 067FFFh
SA13
0
0
1
1
0
1
X
X
X
64/32
0D0000h to 0DFFFFh
068000h to 06FFFFh
SA14
0
0
1
1
1
0
X
X
X
64/32
0E0000h to 0EFFFFh
070000h to 077FFFh
SA15
0
0
1
1
1
1
X
X
X
64/32
0F0000h to 0FFFFFh
078000h to 07FFFFh
SA16
0
1
0
0
0
0
X
X
X
64/32
100000h to 10FFFFh
080000h to 087FFFh
SA17
0
1
0
0
0
1
X
X
X
64/32
110000h to 11FFFFh
088000h to 08FFFFh
SA18
0
1
0
0
1
0
X
X
X
64/32
120000h to 12FFFFh
090000h to 097FFFh
SA19
0
1
0
0
1
1
X
X
X
64/32
130000h to 13FFFFh
098000h to 09FFFFh
SA20
0
1
0
1
0
0
X
X
X
64/32
140000h to 14FFFFh
0A0000h to 0A7FFFh
SA21
0
1
0
1
0
1
X
X
X
64/32
150000h to 15FFFFh
0A8000h to 0AFFFFh
SA22
0
1
0
1
1
0
X
X
X
64/32
160000h to 16FFFFh
0B0000h to 0B7FFFh
SA23
0
1
0
1
1
1
X
X
X
64/32
170000h to 17FFFFh
0B8000h to 0BFFFFh
SA24
0
1
1
0
0
0
X
X
X
64/32
180000h to 18FFFFh
0C0000h to 0C7FFFh
SA25
0
1
1
0
0
1
X
X
X
64/32
190000h to 19FFFFh
0C8000h to 0CFFFFh
SA26
0
1
1
0
1
0
X
X
X
64/32
1A0000h to 1AFFFFh
0D0000h to 0D7FFFh
SA27
0
1
1
0
1
1
X
X
X
64/32
1B0000h to 1BFFFFh
0D8000h to 0DFFFFh
SA28
0
1
1
1
0
0
X
X
X
64/32
1C0000h to 1CFFFFh
0E0000h to 0E7FFFh
SA29
0
1
1
1
0
1
X
X
X
64/32
1D0000h to 1DFFFFh
0E8000h to 0EFFFFh
SA30
0
1
1
1
1
0
X
X
X
64/32
1E0000h to 1EFFFFh
0F0000h to 0F7FFFh
SA31
0
1
1
1
1
1
X
X
X
64/32
1F0000h to 1FFFFFh
0F8000h to 0FFFFFh
(Continued)
12
MBM29PL32TM/BM90/10
Sector Address
Sector
A20 A19 A18 A17 A16 A15 A14 A13 A12
Sector
Size
(Kbytes/
Kwords)
×8)
(×
Address Range
×16)
(×
Address Range
SA32
1
0
0
0
0
0
X
X
X
64/32
200000h to 20FFFFh
100000h to 107FFFh
SA33
1
0
0
0
0
1
X
X
X
64/32
210000h to 21FFFFh
108000h to 10FFFFh
SA34
1
0
0
0
1
0
X
X
X
64/32
220000h to 22FFFFh
110000h to 117FFFh
SA35
1
0
0
0
1
1
X
X
X
64/32
230000h to 23FFFFh
118000h to 11FFFFh
SA36
1
0
0
1
0
0
X
X
X
64/32
240000h to 24FFFFh
120000h to 127FFFh
SA37
1
0
0
1
0
1
X
X
X
64/32
250000h to 25FFFFh
128000h to 12FFFFh
SA38
1
0
0
1
1
0
X
X
X
64/32
260000h to 26FFFFh
130000h to 137FFFh
SA39
1
0
0
1
1
1
X
X
X
64/32
270000h to 27FFFFh
138000h to 13FFFFh
SA40
1
0
1
0
0
0
X
X
X
64/32
280000h to 28FFFFh
140000h to 147FFFh
SA41
1
0
1
0
0
1
X
X
X
64/32
290000h to 29FFFFh
148000h to 14FFFFh
SA42
1
0
1
0
1
0
X
X
X
64/32
2A0000h to 2AFFFFh
150000h to 157FFFh
SA43
1
0
1
0
1
1
X
X
X
64/32
2B0000h to 2BFFFFh
158000h to 15FFFFh
SA44
1
0
1
1
0
0
X
X
X
64/32
2C0000h to 2CFFFFh
160000h to 167FFFh
SA45
1
0
1
1
0
1
X
X
X
64/32
2D0000h to 2DFFFFh
168000h to 16FFFFh
SA46
1
0
1
1
1
0
X
X
X
64/32
2E0000h to 2EFFFFh
170000h to 177FFFh
SA47
1
0
1
1
1
1
X
X
X
64/32
2F0000h to 2FFFFFh
178000h to 17FFFFh
SA48
1
1
0
0
0
0
X
X
X
64/32
300000h to 30FFFFh
180000h to 187FFFh
SA49
1
1
0
0
0
1
X
X
X
64/32
310000h to 31FFFFh
188000h to 18FFFFh
SA50
1
1
0
0
1
0
X
X
X
64/32
320000h to 32FFFFh
190000h to 197FFFh
SA51
1
1
0
0
1
1
X
X
X
64/32
330000h to 33FFFFh
198000h to 19FFFFh
SA52
1
1
0
1
0
0
X
X
X
64/32
340000h to 34FFFFh
1A0000h to 1A7FFFh
SA53
1
1
0
1
0
1
X
X
X
64/32
350000h to 35FFFFh
1A8000h to 1AFFFFh
SA54
1
1
0
1
1
0
X
X
X
64/32
360000h to 36FFFFh
1B0000h to 1B7FFFh
SA55
1
1
0
1
1
1
X
X
X
64/32
370000h to 37FFFFh
1B8000h to 1BFFFFh
SA56
1
1
1
0
0
0
X
X
X
64/32
380000h to 38FFFFh
1C0000h to 1C7FFFh
SA57
1
1
1
0
0
1
X
X
X
64/32
390000h to 39FFFFh
1C8000h to 1CFFFFh
SA58
1
1
1
0
1
0
X
X
X
64/32
3A0000h to 3AFFFFh
1D0000h to 1D7FFFh
SA59
1
1
1
0
1
1
X
X
X
64/32
3B0000h to 3BFFFFh
1D8000h to 1DFFFFh
SA60
1
1
1
1
0
0
X
X
X
64/32
3C0000h to 3CFFFFh
1E0000h to 1E7FFFh
SA61
1
1
1
1
0
1
X
X
X
64/32
3D0000h to 3DFFFFh
1E8000h to 1EFFFFh
SA62
1
1
1
1
1
0
X
X
X
64/32
3E0000h to 3EFFFFh
1F0000h to 1F7FFFh
SA63
1
1
1
1
1
1
0
0
0
8/4
3F0000h to 3F1FFFh
1F8000h to 1F8FFFh
SA64
1
1
1
1
1
1
0
0
1
8/4
3F2000h to 3F3FFFh
1F9000h to 1F9FFFh
(Continued)
13
MBM29PL32TM/BM90/10
(Continued)
Sector Address
Sector
A20 A19 A18 A17 A16 A15 A14 A13 A12
Sector
Size
(Kbytes/
Kwords)
×8)
(×
Address Range
×16)
(×
Address Range
SA65
1
1
1
1
1
1
0
1
0
8/4
3F4000h to 3F5FFFh
1FA000h to 1FAFFFh
SA66
1
1
1
1
1
1
0
1
1
8/4
3F6000h to 3F7FFFh
1FB000h to 1FBFFFh
SA67
1
1
1
1
1
1
1
0
0
8/4
3F8000h to 3F9FFFh
1FC000h to 1FCFFFh
SA68
1
1
1
1
1
1
1
0
1
8/4
3FA000h to 3FBFFFh
1FD000h to 1FDFFFh
SA69
1
1
1
1
1
1
1
1
0
8/4
3FC000h to 3FDFFFh
1FE000h to 1FEFFFh
SA70
1
1
1
1
1
1
1
1
1
8/4
3FE000h to 3FFFFFh
1FF000h to 1FFFFFh
Note : The address range is A20 to A-1 if in Byte mode (BYTE = VIL) .
The address range is A20 to A0 if in Word mode (BYTE = VIH) .
14
MBM29PL32TM/BM90/10
Sector Address Table (MBM29PL32BM)
Sector Address
Sector
A20 A19 A18 A17 A16 A15 A14 A13 A12
Sector
Size
(Kbytes/
Kwords)
×8)
(×
Address Range
×16)
(×
Address Range
SA70
1
1
1
1
1
1
X
X
X
64/32
3F0000h to 3FFFFFh
1F8000h to 1FFFFFh
SA69
1
1
1
1
1
0
X
X
X
64/32
3E0000h to 3EFFFFh
1F0000h to 1F7FFFh
SA68
1
1
1
1
0
1
X
X
X
64/32
3D0000h to 3DFFFFh
1E8000h to 1EFFFFh
SA67
1
1
1
1
0
0
X
X
X
64/32
3C0000h to 3CFFFFh
1E0000h to 1E7FFFh
SA66
1
1
1
0
1
1
X
X
X
64/32
3B0000h to 3BFFFFh
1D8000h to 1DFFFFh
SA65
1
1
1
0
1
0
X
X
X
64/32
3A0000h to 3AFFFFh
1D0000h to 1D7FFFh
SA64
1
1
1
0
0
1
X
X
X
64/32
390000h to 39FFFFh
1C8000h to 1CFFFFh
SA63
1
1
1
0
0
0
X
X
X
64/32
380000h to 38FFFFh
1C0000h to 1C7FFFh
SA62
1
1
0
1
1
1
X
X
X
64/32
370000h to 37FFFFh
1B8000h to 1BFFFFh
SA61
1
1
0
1
1
0
X
X
X
64/32
360000h to 36FFFFh
1B0000h to 1B7FFFh
SA60
1
1
0
1
0
1
X
X
X
64/32
350000h to 35FFFFh
1A8000h to 1AFFFFh
SA59
1
1
0
1
0
0
X
X
X
64/32
340000h to 34FFFFh
1A0000h to 1A7FFFh
SA58
1
1
0
0
1
1
X
X
X
64/32
330000h to 33FFFFh
198000h to 19FFFFh
SA57
1
1
0
0
1
0
X
X
X
64/32
320000h to 32FFFFh
190000h to 197FFFh
SA56
1
1
0
0
0
1
X
X
X
64/32
310000h to 31FFFFh
188000h to 18FFFFh
SA55
1
1
0
0
0
0
X
X
X
64/32
300000h to 30FFFFh
180000h to 187FFFh
SA54
1
0
1
1
1
1
X
X
X
64/32
2F0000h to 2FFFFFh
178000h to 17FFFFh
SA53
1
0
1
1
1
0
X
X
X
64/32
2E0000h to 2EFFFFh
170000h to 177FFFh
SA52
1
0
1
1
0
1
X
X
X
64/32
2D0000h to 2DFFFFh
168000h to 16FFFFh
SA51
1
0
1
1
0
0
X
X
X
64/32
2C0000h to 2CFFFFh
160000h to 167FFFh
SA50
1
0
1
0
1
1
X
X
X
64/32
2B0000h to 2BFFFFh
158000h to 15FFFFh
SA49
1
0
1
0
1
0
X
X
X
64/32
2A0000h to 2AFFFFh
150000h to 157FFFh
SA48
1
0
1
0
0
1
X
X
X
64/32
290000h to 29FFFFh
148000h to 14FFFFh
SA47
1
0
1
0
0
0
X
X
X
64/32
280000h to 28FFFFh
140000h to 147FFFh
SA46
1
0
0
1
1
1
X
X
X
64/32
270000h to 27FFFFh
138000h to 13FFFFh
SA45
1
0
0
1
1
0
X
X
X
64/32
260000h to 26FFFFh
130000h to 137FFFh
SA44
1
0
0
1
0
1
X
X
X
64/32
250000h to 25FFFFh
128000h to 12FFFFh
SA43
1
0
0
1
0
0
X
X
X
64/32
240000h to 24FFFFh
120000h to 127FFFh
SA42
1
0
0
0
1
1
X
X
X
64/32
230000h to 23FFFFh
118000h to 11FFFFh
SA41
1
0
0
0
1
0
X
X
X
64/32
220000h to 22FFFFh
110000h to 117FFFh
SA40
1
0
0
0
0
1
X
X
X
64/32
210000h to 21FFFFh
108000h to 10FFFFh
SA39
1
0
0
0
0
0
X
X
X
64/32
200000h to 20FFFFh
100000h to 107FFFh
SA38
0
1
1
1
1
1
X
X
X
64/32
1F0000h to 1FFFFFh
0F8000h to 0FFFFFh
(Continued)
15
MBM29PL32TM/BM90/10
Sector Address
Sector
A20 A19 A18 A17 A16 A15 A14 A13 A12
Sector
Size
(Kbytes/
Kwords)
×8)
(×
Address Range
×16)
(×
Address Range
SA37
0
1
1
1
1
0
X
X
X
64/32
1E0000h to 1EFFFFh
0F0000h to 0F7FFFh
SA36
0
1
1
1
0
1
X
X
X
64/32
1D0000h to 1DFFFFh
0E8000h to 0EFFFFh
SA35
0
1
1
1
0
0
X
X
X
64/32
1C0000h to 1CFFFFh
0E0000h to 0E7FFFh
SA34
0
1
1
0
1
1
X
X
X
64/32
1B0000h to 1BFFFFh
0D8000h to 0DFFFFh
SA33
0
1
1
0
1
0
X
X
X
64/32
1A0000h to 1AFFFFh
0D0000h to 0D7FFFh
SA32
0
1
1
0
0
1
X
X
X
64/32
190000h to 19FFFFh
0C8000h to 0CFFFFh
SA31
0
1
1
0
0
0
X
X
X
64/32
180000h to 18FFFFh
0C0000h to 0C7FFFh
SA30
0
1
0
1
1
1
X
X
X
64/32
170000h to 17FFFFh
0B8000h to 0BFFFFh
SA29
0
1
0
1
1
0
X
X
X
64/32
160000h to 16FFFFh
0B0000h to 0B7FFFh
SA28
0
1
0
1
0
1
X
X
X
64/32
150000h to 15FFFFh
0A8000h to 0AFFFFh
SA27
0
1
0
1
0
0
X
X
X
64/32
140000h to 14FFFFh
0A0000h to 0A7FFFh
SA26
0
1
0
0
1
1
X
X
X
64/32
130000h to 13FFFFh
098000h to 09FFFFh
SA25
0
1
0
0
1
0
X
X
X
64/32
120000h to 12FFFFh
090000h to 097FFFh
SA24
0
1
0
0
0
1
X
X
X
64/32
110000h to 11FFFFh
088000h to 08FFFFh
SA23
0
1
0
0
0
0
X
X
X
64/32
100000h to 10FFFFh
080000h to 087FFFh
SA22
0
0
1
1
1
1
X
X
X
64/32
0F0000h to 0FFFFFh
078000h to 07FFFFh
SA21
0
0
1
1
1
0
X
X
X
64/32
0E0000h to 0EFFFFh
070000h to 077FFFh
SA20
0
0
1
1
0
1
X
X
X
64/32
0D0000h to 0DFFFFh
068000h to 06FFFFh
SA19
0
0
1
1
0
0
X
X
X
64/32
0C0000h to 0CFFFFh
060000h to 067FFFh
SA18
0
0
1
0
1
1
X
X
X
64/32
0B0000h to 0BFFFFh
058000h to 05FFFFh
SA17
0
0
1
0
1
0
X
X
X
64/32
0A0000h to 0AFFFFh
050000h to 057FFFh
SA16
0
0
1
0
0
1
X
X
X
64/32
090000h to 09FFFFh
048000h to 04FFFFh
SA15
0
0
1
0
0
0
X
X
X
64/32
080000h to 08FFFFh
040000h to 047FFFh
SA14
0
0
0
1
1
1
X
X
X
64/32
070000h to 07FFFFh
038000h to 03FFFFh
SA13
0
0
0
1
1
0
X
X
X
64/32
060000h to 06FFFFh
030000h to 037FFFh
SA12
0
0
0
1
0
1
X
X
X
64/32
050000h to 05FFFFh
028000h to 02FFFFh
SA11
0
0
0
1
0
0
X
X
X
64/32
040000h to 04FFFFh
020000h to 027FFFh
SA10
0
0
0
0
1
1
X
X
X
64/32
030000h to 03FFFFh
018000h to 01FFFFh
SA9
0
0
0
0
1
0
X
X
X
64/32
020000h to 02FFFFh
010000h to 017FFFh
SA8
0
0
0
0
0
1
X
X
X
64/32
010000h to 01FFFFh
008000h to 00FFFFh
SA7
0
0
0
0
0
0
1
1
1
8/4
00E000h to 00FFFFh
007000h to 007FFFh
SA6
0
0
0
0
0
0
1
1
0
8/4
00C000h to 00DFFFh
006000h to 006FFFh
SA5
0
0
0
0
0
0
1
0
1
8/4
00A000h to 00BFFFh
005000h to 005FFFh
(Continued)
16
MBM29PL32TM/BM90/10
(Continued)
Sector Address
Sector
A20 A19 A18 A17 A16 A15 A14 A13 A12
Sector
Size
(Kbytes/
Kwords)
×8)
(×
Address Range
×16)
(×
Address Range
SA4
0
0
0
0
0
0
1
0
0
8/4
008000h to 009FFFh
004000h to 004FFFh
SA3
0
0
0
0
0
0
0
1
1
8/4
006000h to 007FFFh
003000h to 003FFFh
SA2
0
0
0
0
0
0
0
1
0
8/4
004000h to 005FFFh
002000h to 002FFFh
SA1
0
0
0
0
0
0
0
0
1
8/4
002000h to 003FFFh
001000h to 001FFFh
SA0
0
0
0
0
0
0
0
0
0
8/4
000000h to 001FFFh
000000h to 000FFFh
Note : The address range is A20 to A-1 if in Byte mode (BYTE = VIL) .
The address range is A20 to A0 if in Word mode (BYTE = VIH) .
17
MBM29PL32TM/BM90/10
Sector Group Address Table (MBM29PL32TM)
Sector Group
A20
A19
A18
A17
A16
A15
A14
A13
A12
Sectors
SGA0
0
0
0
0
X
X
X
X
X
SA0 to SA3
SGA1
0
0
0
1
X
X
X
X
X
SA4 to SA7
SGA2
0
0
1
0
X
X
X
X
X
SA8 to SA11
SGA3
0
0
1
1
X
X
X
X
X
SA12 to SA15
SGA4
0
1
0
0
X
X
X
X
X
SA16 to SA19
SGA5
0
1
0
1
X
X
X
X
X
SA20 to SA23
SGA6
0
1
1
0
X
X
X
X
X
SA24 to SA27
SGA7
0
1
1
1
X
X
X
X
X
SA28 to SA31
SGA8
1
0
0
0
X
X
X
X
X
SA32 to SA35
SGA9
1
0
0
1
X
X
X
X
X
SA36 to SA39
SGA10
1
0
1
0
X
X
X
X
X
SA40 to SA43
SGA11
1
0
1
1
X
X
X
X
X
SA44 to SA47
SGA12
1
1
0
0
X
X
X
X
X
SA48 to SA51
SGA13
1
1
0
1
X
X
X
X
X
SA52 to SA55
SGA14
1
1
1
0
X
X
X
X
X
SA56 to SA59
0
0
0
1
X
X
X
SA60 to SA62
1
0
SGA15
18
1
1
1
1
SGA16
1
1
1
1
1
1
0
0
0
SA63
SGA17
1
1
1
1
1
1
0
0
1
SA64
SGA18
1
1
1
1
1
1
0
1
0
SA65
SGA19
1
1
1
1
1
1
0
1
1
SA66
SGA20
1
1
1
1
1
1
1
0
0
SA67
SGA21
1
1
1
1
1
1
1
0
1
SA68
SGA22
1
1
1
1
1
1
1
1
0
SA69
SGA23
1
1
1
1
1
1
1
1
1
SA70
MBM29PL32TM/BM90/10
Sector Group Address Table (MBM29PL32BM)
Sector Group
A20
A19
A18
A17
A16
A15
A14
A13
A12
Sectors
SGA0
0
0
0
0
0
0
0
0
0
SA0
SGA1
0
0
0
0
0
0
0
0
1
SA1
SGA2
0
0
0
0
0
0
0
1
0
SA2
SGA3
0
0
0
0
0
0
0
1
1
SA3
SGA4
0
0
0
0
0
0
1
0
0
SA4
SGA5
0
0
0
0
0
0
1
0
1
SA5
SGA6
0
0
0
0
0
0
1
1
0
SA6
SGA7
0
0
0
0
0
0
1
1
1
SA7
0
1
1
0
X
X
X
SA8 to SA10
1
1
SGA8
0
0
0
0
SGA9
0
0
0
1
X
X
X
X
X
SA11 to SA14
SGA10
0
0
1
0
X
X
X
X
X
SA15 to SA18
SGA11
0
0
1
1
X
X
X
X
X
SA19 to SA22
SGA12
0
1
0
0
X
X
X
X
X
SA23 to SA26
SGA13
0
1
0
1
X
X
X
X
X
SA27 to SA30
SGA14
0
1
1
0
X
X
X
X
X
SA31 to SA34
SGA15
0
1
1
1
X
X
X
X
X
SA35 to SA38
SGA16
1
0
0
0
X
X
X
X
X
SA39 to SA42
SGA17
1
0
0
1
X
X
X
X
X
SA43 to SA46
SGA18
1
0
1
0
X
X
X
X
X
SA47 to SA50
SGA19
1
0
1
1
X
X
X
X
X
SA51 to SA54
SGA20
1
1
0
0
X
X
X
X
X
SA55 to SA58
SGA21
1
1
0
1
X
X
X
X
X
SA59 to SA62
SGA22
1
1
1
0
X
X
X
X
X
SA63 to SA66
SGA23
1
1
1
1
X
X
X
X
X
SA67 to SA70
19
MBM29PL32TM/BM90/10
Common Flash Memory Interface Code
A6 to A0
DQ15 to DQ0
Description
10h
11h
12h
0051h
0052h
0059h
Query-unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
(02h = Fujitsu standard)
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set
(00h = not applicable)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table
(00h = not applicable)
1Bh
0027h
VCC Min (write/erase)
DQ7 to DQ4: 1 V/bit,
DQ3 to DQ0: 100 mV/bit
1Ch
0036h
VCC Max (write/erase)
DQ7 to DQ4: 1 V/bit,
DQ3 to DQ0: 100 mV/bit
1Dh
0000h
VPP Min voltage (00h = no Vpp pin)
1Eh
0000h
VPP Max voltage (00h =no Vpp pin)
1Fh
0007h
Typical timeout per single write 2N µs
20h
0007h
Typical timeout for Min size buffer write 2N µs
21h
000Ah
Typical timeout per individual sector erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms
23h
0001h
Max timeout for write 2N times typical
24h
0005h
Max timeout for buffer write 2N times typical
25h
0004h
Max timeout per individual sector erase 2N times typical
26h
0000h
Max timeout for full chip erase 2N times typical
27h
0016h
Device Size = 2N byte
28h
29h
0002h
0000h
Flash Device Interface description
02h : × 8/ × 16
2Ah
2Bh
0005h
0000h
Max number of byte in
multi-byte write = 2N
2Ch
0002h
Number of Erase Block Regions within device (02h = Boot)
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
31h
32h
33h
34h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
(Continued)
20
MBM29PL32TM/BM90/10
(Continued)
A6 to A0
DQ15 to DQ0
Description
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII
44h
0033h
Minor version number, ASCII
45h
0008h
Address Sensitive Unlock
Required
46h
0002h
Erase Suspend
(02h = To Read & Write)
47h
0004h
Number of sectors in per group
48h
0001h
Sector Temporary Unprotection
(01h = Supported)
49h
0004h
Sector Protection Algorithm
4Ah
0000h
Dual Operation
(00h = Not Supported)
4Bh
0000h
Burst Mode Type
(00h = Not Supported)
4Ch
0001h
Page Mode Type
(01h = 4-Word Page Supported)
4Dh
00B5h
VACC (Acceleration) Supply Minimum
DQ7 to DQ4: 1 V/bit,
DQ3 to DQ0: 100 mV/bit
4Eh
00C5h
VACC (Acceleration) Supply Maximum
DQ7 to DQ4: 1 V/bit,
DQ3 to DQ0: 100 mV/bit
4Fh
00XXh
CFI Write Protect
(02h = Bottom Boot Device with WP Protect
03h = Top Boot Device with WP Protect)
50h
01h
Program Suspend
(01h = Supported)
21
MBM29PL32TM/BM90/10
■ FUNCTIONAL DESCRIPTION
Standby Mode
There are two ways to implement the standby mode on the device, one using both the CE and RESET pins, and
the other via the RESET pin only.
When using both pins, CMOS standby mode is achieved with CE and RESET input held at VCC ±0.3 V. Under
this condition the current consumed is less than 5 µA Max. During Embedded Algorithm operation, VCC active
current (ICC2) is required even when CE = “H”. The device can be read with standard access time (tCE) from either
of these standby modes.
When using the RESET pin only, CMOS standby mode is achieved with RESET input held at VSS ±0.3 V (CE =
“H” or “L”) . Under this condition the current consumed is less than 5 µA Max. Once the RESET pin is set high,
the device requires tRH as a wake-up time for output to be valid for read access.
During standby mode, the output is in the high impedance state, regardless of OE input.
Automatic Sleep Mode
Automatic sleep mode works to restrain power consumption during read-out of device data. It can be useful in
applications such as handy terminal, which requires low power consumption.
To activate this mode, the device automatically switch themselves to low power mode when the device addresses
remain stable after tACC + 30 ns from data valid. It is not necessary to control CE, WE, and OE in this mode. The
current consumed is typically 1 µA (CMOS Level).
Since the data are latched during this mode, the data are continuously read out. When the addresses are
changed, the mode is automatically canceled and the device read-out the data for changed addresses.
Autoselect
The Autoselect mode allows reading out of a binary code and identifies its manufacturer and type.It is intended
for use by programming equipment for the purpose of automatically matching the device to be programmed with
its corresponding programming algorithm.
To activate this mode, the programming equipment must force VID on address pin A9. Two identifier bytes may
then be sequenced from the devices outputs by toggling A0. All addresses can be either High or Low except A6,
A3,A2,A1 and A0. See “MBM29PL32TM/BM User Bus Operations (Word Mode : BYTE = VIH)” and
“MBM29PL32TM/BM User Bus Operations (Byte Mode : BYTE = VIL)” in ■DEVICE BUS OPERATION.
The manufacturer and device codes may also be read via the command register, for instances when the device
is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is
illustrated in “MBM29PL32TM/BM Standard Command Definitions” in ■DEVICE BUS OPERATION.Refer to
Autoselect Command section.
In Word mode, a read cycle from address 00h returns the manufacturer’s code (Fujitsu = 04h) . A read cycle at
address 01h outputs device code. When 227Eh is output, it indicates that two additional codes, called Extended
Device Codes will be required. Therefore the system may continue reading out these Extended Device Codes
at addresses of 0Eh and 0Fh. Notice that the above applies to Word mode. The addresses and codes differ from
those of Byte mode. Refer to “Sector Group Protection Verify Autoselect Codes” in ■DEVICE BUS OPERATION.
Read Mode
The device has two control functions required to obtain data at the outputs. CE is the power control and used
for a device selection. OE is the output control and used to gate data to the output pins.
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable
access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output
enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
addresses have been stable for at least tACC-tOE time.) When reading out a data without changing addresses after
power-up, input hardware reset or to change CE pin from “H” or “L”.
22
MBM29PL32TM/BM90/10
Page Mode Read
The device is capable of fast read access for random locations within limited address location called Page. The
Page size of the device is 8 bytes / 4 words, within the appropriate Page being selected by the higher address
bits A20 to A2 and the address bits A1 to A0 in Word mode ( A1 to A-1 in Byte mode) determining the specific word
within that page. This is an asynchronous operation with the microprocessor supplying the specific word location.
The initial page access is equal to the random access (tACC) and subsequent Page read access (as long as the
locations specified by the microprocessor fall within that Page) is equivalent to the page address access time
(tPACC). Here again, CE selects the device and OE is the output control and should be used to gate data to the
output pins if the device is selected. Fast Page mode, accesses are obtained by keeping A20 to A2 constant and
changing A1 and A0 in Word mode ( A1 to A-1 in Byte mode ) to select the specific word within that Page.
Output Disable
With the OE input at logic high level (VIH), output from the devices are disabled. This may cause the output pins
to be in a high impedance state.
Write
Device erasure and programming are accomplished via the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the device function.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on the
falling edge of WE or CE, whichever starts later; while data is latched on the rising edge of WE or CE, whichever
starts first. Standard microprocessor write timings are used.
Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters.
Sector Group Protection
The device features hardware sector group protection. This feature will disable both program and erase operations in any combination of thirty two sector groups of memory.See “Sector Group Address Table
(MBM29PL32TM)” and “Sector Group Address Table (MBM29PL32BM)” in ■DEVICE BUS OPERATION. The
user‘s side can use the sector group protection using programming equipment. The device is shipped with all
sector groups that are unprotected.
To activate it, the programming equipment must force VID on address pin A9 and control pin OE, CE = VIL and
A6 = A3 = A2 = A0 = VIL, A1 = VIH. The sector group addresses (A20, A19, A18, A17, A16, A15, A14, A13, and A12) should
be set to the sector to be protected. “Sector Address Table (MBM29PL32TM)” and “Sector Address Table
(MBM29PL32BM)” in ■DEVICE BUS OPERATION defines the sector address for each of the seventy-one (71)
individual sectors, and “Sector Group Address Table (MBM29PL32TM)” and “Sector Group Address Table
(MBM29PL32BM)” in ■DEVICE BUS OPERATION defines the sector group address for each of the twenty-four
(24) individual group sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse
and is terminated with the rising edge of the same. Sector group addresses must be held constant during the
WE pulse. See “Sector Group Protection Timing Diagram” in ■SWITCHING WAVEFORMS and “Sector Group
Protection Algorithm” in ■FLOW CHART for sector group protection timing diagram and algorithm.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
with CE and OE at VIL and WE at VIH. Scanning the sector group addresses (A20, A19, A18, A17, A16, A15, A14, A13,
and A12) while (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) will produce a logical “1” code at device output DQ0 for a
protected sector. Otherwise the device will produce “0” for unprotected sectors. In this mode, the lower order
addresses, except for A0, A1, A2, A3, and A6 can be either High or Low. Address locations with A1 = VIL are reserved
for Autoselect manufacturer and device codes. A-1 requires applying to VIL on Byte mode.
It is also possible to determine if a sector group is protected in the system by writing an Autoselect command.
Performing a read operation at the address location XX02h, where the higher order addresses(A20, A19, A18, A17,
A16, A15, A14, A13, and A12) are the desired sector group address will produce a logical “1” at DQ0 for a protected
sector group. See “Sector Group Protection Verify Autoselect Codes” in ■DEVICE BUS OPERATION for Autoselect codes.
23
MBM29PL32TM/BM90/10
Temporary Sector Group Unprotection
This feature allows temporary unprotection of previously protected sector groups of the devices in order to change
data. The Sector Group Unprotection mode is activated by setting the RESET pin to high voltage (VID). During
this mode, formerly protected sector groups can be programmed or erased by selecting the sector group addresses. Once the VID is taken away from the RESET pin, all the previously protected sector groups will be
protected again. Refer to “Temporary Sector Group Unprotection Timing Diagram” in ■SWITCHING WAVEFORMS and “Temporary Sector Group Unprotection Algorithm” in ■FLOW CHART.
Hardware Reset
The devices may be reset by driving the RESET pin to VIL from VIH. The RESET pin has a pulse requirement
and has to be kept low (VIL) for at least “tRP” in order to properly reset the internal state machine. Any operation
in the process of being executed will be terminated and the internal state machine will be reset to the read mode
“tREADY” after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the devices require an
additional “tRH” before it will allow read access. When the RESET pin is low, the devices will be in the standby
mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware reset occurs during
a program or erase operation, the data at that particular location will be corrupted.
Write Protect (WP)
The Write Protection function provides a hardware method of protecting certain outermost 8K bytes / 4K words
sectors without using VID. This function is one of two provided by the WP/ACC pin.
If the system asserts VIL on the WP/ACC pin, the device disables program and erase functions in the outermost
8K bytes / 4K words sectors independently of whether this sector was protected or unprotected using the method
described in “Sector Group Protection" above.
If the system asserts VIH on the WP/ACC pin, the device reverts of whether the outermost 8K bytes / 4K words
sectors were last set to be protected to the unprotected status. Sector protection or unprotection for this sector
depends on whether this was last protected or unprotected using the method described in “Sector protection/
unprotection”.
Accelerated Program Operation
The device offers accelerated program operation which enables programming in high speed. If the system asserts
VACC to the WP/ACC pin, the device automatically enters the acceleration mode and the time required for program
operation will reduce to about 85%. This function is primarily intended to allow high speed programing, so caution
is needed as the sector group becomes temporarily unprotected.
The system would use a fast program command sequence when programming during acceleration mode. Set
command to fast mode and reset command from fast mode are not necessary. When the device enters the
acceleration mode, the device is automatically set to fast mode. Therefore, the present sequence could be used
for programming and detection of completion during acceleration mode.
Removing VACC from the WP/ACC pin returns the device to normal operation. Do not remove VACC from the WP/
ACC pin while programming. See “Accelerated Program Timing Diagram” in ■SWITCHING WAVEFORM.
24
MBM29PL32TM/BM90/10
■ COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
“MBM29PL32TM/BM Standard Command Definitions” in ■DEVICE BUS OPERATION shows the valid register
command sequences. Note that the Erase Suspend (B0h) and Erase Resume (30h) commands are valid only
while the Sector Erase operation is in progress. Also the Program Suspend (B0h) and Program Resume (30h)
commands are valid only while the Program operation is in progress.Moreover Reset commands are functionally
equivalent, resetting the device to the read mode. Please note that commands must be asserted to DQ7 to DQ0
and DQ15 to DQ8 bits are ignored.
Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ5 = 1) to Read mode, the Reset operation
is initiated by writing the Reset command sequence into the command register. The devices remain enabled for
reads until the command register contents are altered.
The devices will automatically be in the reset state after power-up. In this case, a command sequence is not
required in order to read data.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. Therefore,
manufacture and device codes must be accessible while the devices reside in the target system. PROM programmers typically access the signature codes by raising A9 to a high voltage. However applying high voltage
onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated first by writing two unlock cycles. This is followed by a third write
cycle that contains the address and the Autoselect command. Then the manufacture and device codes can be
read from the address, and an actual data of memory cell can be read from the another address.
Following the command write, a read cycle from address 00h returns the manufactures’s code (Fujitsu = 04h).
A read cycle at address 01h outputs device code. When 227Eh is output, it indicates that two additional codes,
called Extended Device Codes will be required. Therefore the system may continue reading out these Extended
Device Codes at address of 0Eh as well as at 0Fh. Notice that above applies to Word mode. The addresses and
codes differ from those of Byte mode. Refer to “Sector Group Protection Verify Autoselect Codes” in ■DEVICE
BUS OPERATION.
To terminate the operation, it is necessary to write the Reset command into the register. To execute the Autoselect
command during the operation, Reset command must be written before the Autoselect command.
Programming
The devices are programmed on a word-by-word basis. Programming is a four bus cycle operation. There are
two “unlock” write cycles. These are followed by the program set-up command and data write cycles. Addresses
are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge
of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) starts programming.
Upon executing the Embedded Program Algorithm command sequence, the system is not required to provide
further controls or timings. The device will automatically provide adequate internally generated program pulses
and verify the programmed cell margin.
The system can determine the status of the program operation by using DQ7 (Data Polling), DQ6 (Toggle Bit) or
RY/BY. The Data Polling and Toggle Bit are automatically performed at the memory location being programmed.
The programming operation is completed when the data on DQ7 is equivalent to data written to this bit at which
the devices return to the read mode and plogram addresses are no longer latched. Therefore, the devices require
that a valid address to the devices be supplied by the system at this particular instance. Hence Data Polling
requires the same address which is being programmed.
If hardware reset occurs during the programming operation, the data being written is not guaranteed.
25
MBM29PL32TM/BM90/10
Programming is allowed in any address sequence and across sector boundaries. Beware that a data “0” cannot
be programmed back to a “1”. Attempting to do so may result in either failure condition or an apparent success
according to the data polling algorithm. But a read from Reset mode will show that the data is still “0”. Only erase
operations can convert “0”s to “1”s.
Note that attempting to program a “1” over a “0” will result in programming failure. This precaution is the same
with Fujitsu standard NOR devices. “Embedded ProgramTM Algorithm” in ■FLOW CHART illustrates the Embedded ProgramTM Algorithm using typical command strings and bus operations.
Program Suspend/Resume
The Program Suspend command allows the system to interrupt a program operation so that data can be read
from any address. Writing the Program Suspend command (B0h) during Embedded Program operation immediately suspends the programming.
When the Program Suspend command is written during a programming process, the device halts the program
operation within 1us and updates the status bits.After the program operation has been suspended, the system
can read data from any address. The data at program-suspended address is not valid. Normal read timing and
command definitions apply.
After the Program Resume command (30h) is written, the device reverts to programming. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program
operation. See "Write Operation Status" for more information.
When issuing program suspend command in 4 µs after issuing program command, determine the status of
program operation by reading status bit at more 4 µs after issuing program resume command.
The system also writes the Autoselect command sequence in the Program Suspend mode. The device allows
reading Autoselect codes at the addresses within programming sectors, since the codes are not stored in the
memory. When the device exits the Autoselect mode, the device reverts to the Program Suspend mode, and is
ready for another valid operation. See "Autoselect Command Sequence" for more information.
The system must write the Program Resume command to exit from the Program Suspend mode and continue
the programming operation. Further writes of the Resume command are ignored. Another Program Suspend
command can be written after the device resumes programming.
Do not read CFI code after HiddenROM Entry and Exit in program suspend mode.
Write Buffer Programming Operations
Write Buffer Programming allows the system write to series of 16 words in one programming operation. This
results in faster effective word programming time than the standard programming algorithms. The Write Buffer
Programming command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle selecting the Sector Address in which programming will occur. In forth cycle contains both Sector Address
and unique code for data bus width will be loaded into the page buffer at the Sector Address in which programming
will occur.
The system then writes the starting address/data combination. This “starting address” must be the same Sector
Address used in third and fourth cycles and its lower addresses of A3 to A0 should be 0h. All subsequent address
must be incremented by 1. Addresses are latched on the falling edge of CE or WE, whichever happens later
and the data is latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE
(whichever happens first) starts programming. Upon executing the Write Buffer Programming Operations command sequence, the system is not required to provide further controls or timings. The device will automatically
provide adequate internally generated program pulses and verify the programmed cell margin.
DQ7(Data Polling), DQ6(Toggle Bit), DQ5(Exceeded Timing Limits), DQ1(Write-to-Buffer Abort) should be monitored to determine the device status during Write Buffer Programming. In addition to these functions, it is also
possible to indicate to the host system that Write Buffer Programming Operations are either in progress or have
been completed by RY/BY. See “Hardware Sequence Flags”.
The Data polling techniques described in “Data Polling Algorithm” in ■FLOW CHART should be used while
monitoring the last address location loaded into the write buffer. In addition, it is not neccessary to specify an
26
MBM29PL32TM/BM90/10
address in Toggle Bit techniques described in “Toggle Bit Algorithm” in ■FLOW CHART. The automatic programing operation is completed when the data on DQ7 is equivalent to the data written to this bit at which time
the device returns to the read mode and addresses are no longer latched ( See "Hardware Sequence Flags").
The write-buffer programming operation can be suspended using the standard program suspend/resume commands.
Once the write buffer programming is set, the system must then write the “Program Buffer to Flash” command
at the Sector Address. Any other address/data combination will abort the Write Buffer Programming operation
and the device will continue busy state.
The Write Buffer Programming Sequence can be ABORTED by doing the following :
• Different Sector Address is asserted.
• Write data other than the “Program Buffer to Flash" command after the specified number of “data load” cycles.
A “Write-to-Buffer-Abort Reset” command sequence must be written to the device to return to read mode. (See
“MBM29PL32TM/BM Standard Command Definitions” in ■DEVICE BUS OPERATION for details on this command sequence.)
Chip Erase
Chip erase is a six bus cycle operation. It begins two “unlock” write cycles followed by writing the “set-up”
command, and two “unlock” write cycles followed by the chip erase command which invokes the Embedded
Erase algorithm.
The device does not require the user to program the device prior to erase. Upon executing the Embedded Erase
Algorithm the devices automatically programs and verifies the entire memory for an all zero data pattern prior
to electrical erase (Preprogram function). The system is not required to provide any controls or timings during
these operations.
The system can determine the erase operation status by using DQ7 (Data Polling), DQ6 (Toggle Bit I) and DQ2
(Toggle Bit II) or RY/BY output signal. The chip erase begins on the rising edge of the last CE or WE, whichever
happens first from last command sequence and completes when the data on DQ7 is “1” (See Write Operation
Status section.) at which time the device returns to read mode.
Sector Erase
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command.
Multiple sectors may be erased concurrently by writing the same six bus cycle operations. This sequence is
followed by writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased.
The time between writes must be less than Erase Time-out time(tTOW). Otherwise that command will not be
accepted and erasure will not start. It is recommended that processor interrupts be disabled during this time to
guarantee this condition. The interrupts can reoccur after the last Sector Erase command is written. A time-out
of “tTOW” from the rising edge of last CE or WE, whichever happens first, will initiate the execution of the Sector
Erase command(s). If another falling edge of CE or WE, whichever happens first occurs within the “tTOW” timeout window the timer is reset (monitor DQ3 to determine if the sector erase timer window is still open, see section
DQ3, Sector Erase Timer). Resetting the devices once execution has begun will corrupt the data in the sector.
In that case, restart the erase on those sectors and allow them to complete (refer to the Write Operation Status).
Loading the sector erase buffer may be done in any sequence and with any number of sectors (0 to 70).
Sector erase does not require the user to program the devices prior to erase. The devices automatically program
all memory locations in the sector(s) to be erased prior to electrical erase using the Embedded Erase Algorithm.
When erasing a sector, the remaining unselected sectors remain unaffected. The system is not required to
provide any controls or timings during these operations.
The system can determine the status of the erase operation by using DQ7 (Data Polling), DQ6 (Toggle Bit) or
RY/BY.
The sector erase begins after the “tTOW” time-out from the rising edge of CE or WE whichever happens first for
the last sector erase command pulse and completes when the data on DQ7 is “1” (see Write Operation Status
section), at which the devices return to the read mode. Data polling and Toggle Bit must be performed at an
address within any of the sectors being erased.
27
MBM29PL32TM/BM90/10
Erase Suspend/Resume
The Erase Suspend command allows the user to interrupt Sector Erase operation and then perform read or
programming to a sector not being erased. This command is applicable ONLY during the Sector Erase operation
within the time-out period for sector erase. Writting the Erase Suspend command (B0h) during the Sector Erase
time-out results in immediate termination of the time-out period and suspension of the erase operation.
Writing the "Erase Resume" command (30h) resumes the erase operation.
When the "Erase Suspend" command is written during the Sector Erase operation, the device takes maximum
of “tSPD” to suspend the erase operation. When the devices enter the erase-suspended mode, the RY/BY output
pin will be at High-Z and the DQ7 bit will be at logic “1” and DQ6 will stop toggling. The user must use the address
of the erasing sector for reading DQ6 and DQ7 to determine if the erase operation has been suspended. Further
writes of the Erase Suspend command are ignored.
To resume the operation of Sector Erase, the Resume command (30h) should be written. Any further writes of
the Resume command at this point will be ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
Do not issue program command after entering erase-suspend-read mode.
Fast Mode Set/Reset
The device has Fast Mode function. It dispenses with the initial two unclock cycles required in the standard
program command sequence by writing Fast Mode command into the command register. In this mode, the
required bus cycle for programming consists of two cycles instead of four bus cycles in standard program
command. The read operation is also executed after exiting this mode. During the Fast mode, do not write any
command other than the Fast program/Fast mode reset command. To exit from this mode, write Fast Mode Reset
command into the command register. (Refer to the “Embedded ProgramTM Algorithm for Fast Mode” in ■FLOW
CHART.) The VCC active current is required even CE = VIH during Fast Mode.
Fast Programming
During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program
Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). See “Embedded
ProgramTM Algorithm for Fast Mode” in ■FLOW CHART.
Extended Sector Group Protection
In addition to normal sector group protection, the device has Extended Sector Group Protection as extended
function. This function enables protection of the sector group by forcing VID on RESET pin and writes a command
sequence. Unlike conventional procedures, it is not necessary to force VID and control timing for control pins.
The only RESET pin requires VID for sector group protection in this mode. The extended sector group protection
requires VID on RESET pin. With this condition, the operation is initiated by writing the set-up command (60h)
into the command register. Then the sector group addresses pins (A20, A19, A18, A17, A16, A15, A14, A13 and A12)
and (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) should be set to the sector group to be protected (set VIL for the other
addresses pins is recommended), and write extended sector group protection command (60h). A sector group
is typically protected in 250 µs. To verify programming of the protection circuitry, the sector group addresses
pins (A20, A19, A18, A17, A16, A15, A14, A13 and A12) and (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) should be set and write
a command (40h). Following the command write, a logical “1” at device output DQ0 will produce for protected
sector in the read operation. If the output data is logical “0”, write the extended sector group protection command
(60h) again. To terminate the operation, set RESET pin to VIH. (Refer to the “Extended Sector Group Protection
Timing Diagram” in ■SWITCHING WAVEFORMS and “Extended Sector Group Protection Algorithm” in ■FLOW
CHART.)
28
MBM29PL32TM/BM90/10
Query Command (CFI : Common Flash Memory Interface)
The CFI (Common Flash Memory Interface) specification outlines device and host system software interrogation
handshake which allows specific vendor-specified software algorithms to be used for entire families of devices.
This allows device-independent, JEDEC ID-independent, and forward-and backward-compatible software support for the specified flash device families. Refer to CFI specification in detail.
The operation is initiated by writing the query command (98h) into the command register. Following the command
write, a read cycle from specific address retrieves device information. Please note that output data of upper byte
(DQ15 to DQ8) is “0”. Refer to the CFI code table. To terminate operation, it is necessary to write the Reset
command sequence into the register. (See “Common Flash Memory Interface Code” in ■DEVICE BUS OPERATION.)
HiddenROM Mode
(1) HiddenROM Region
The HiddenROM (HiddenROM) feature provides a Flash memory region that the system may access through
a new command sequence. This is primarily intended for customers who wish to use an Electronic Serial Number
(ESN) in the device with the ESN protected against modification. Once the HiddenROM region is protected, any
further modification of that region is impossible. This ensures the security of the ESN once the product is shipped
to the field.
The HiddenROM region is 256 bytes / 128 words in length. After the system writes the HiddenROM Entry
command sequence, it may read the HiddenROM region by using device addresses A6 to A0 (A20 to A7 are all
“0”). That is, the device sends only program command that would normally be sent to the address to the
HiddenROM region. This mode of operation continues until the system issues the Exit HiddenROM command
sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device
reverts to sending commands to the address.
If you request Fujitsu to program the ESN in the device, please contact a Fujitsu representative for more information.
(2) HiddenROM Entry Command
The device has a HiddenROM area with One Time Protect function. This area is to enter the security code and
to unable the change of the code once set. Programming is allowed in this area until it is protected. However,
once it gets protected, it is impossible to unprotect. Therefore, extreme caution is required.
The HiddenROM area is 256 bytes / 128 words. This area is in SA0 . Therefore, write the HiddenROM entry
command sequence to enter the HiddenROM area. It is called HiddenROM mode when the HiddenROM area
appears.
Sectors other than the block area SA0 can be read during HiddenROM mode. Read/program of the HiddenROM
area is possible during HiddenROM mode. Write the HiddenROM reset command sequence to exit the HiddenROM mode. Note that any other commands should not be issued than the HiddenROM program/protection/reset
commands during the HiddenROM mode. When you issue the other commands including the suspend resume
capability, send the HiddenROM reset command first to exit the HiddenROM mode and then issue each command.
29
MBM29PL32TM/BM90/10
(3) HiddenROM Program Command
To program the data to the HiddenROM area, write the HiddenROM program command sequence during HiddenROM mode. This command is the same as the usual program command, except that it needs to write the
command during HiddenROM mode. Therefore the detection of completion method is the same as in the past,
using the DQ7 data pooling, DQ6 Toggle bit or RY/BY. You should pay attention to the address to be programmed.
If an address not in the HiddenROM area is selected, the previous data will be deleted.
During the write into the HiddenROM region, the program suspend command issuance is prohibited.
(4) HiddenROM Protect Command
There are two methods to protect the HiddenROM area. One is to write the sector group protect setup command
(60h) , set the sector address in the HiddenROM area and (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) , and write the
sector group protect command (60h) during the HiddenROM mode. The same command sequence may be used
because it is the same as the extension sector group protect in the past, except that it is in the HiddenROM
mode and does not apply high voltage to the RESET pin. Please refer to above mentioned “Extended Sector
Group Protection” for details of sector group protect setting.
The other method is to apply high voltage (VID) to A9 and OE, set the sector address in the HiddenROM area
and (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) , and apply the write pulse during the HiddenROM mode. To verify the
protect circuit, apply high voltage (VID) to A9, specify (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) and the sector address
in the HiddenROM area, and read. When “1” appears on DQ0, the protect setting is completed. “0” will appear
on DQ0 if it is not protected. Apply write pulse again. The same command sequence could be used for the above
method because other than the HiddenROM mode, it is the same as the sector group protect previously mentioned.
Take note that other sector groups will be affected if an address other than those for the HiddenROM area is
selected for the sector group address, so please be careful. Pay close attention that once it is protected, protection
CANNOT BE CANCELLED.
30
MBM29PL32TM/BM90/10
Write Operation Status
Detailed in “Hardware Sequence Flags” are all the status flags which can determine the status of the device for
current mode operation. When checking Hardware Sequence Flags during program operations, it should be
checked 4 µs after issuing program command. During sector erase, the part provides the status flags automatically to the I/O ports. The information on DQ2 is address sensitive. If an address from an erasing sector is
consecutively read, then the DQ2 bit will toggle. However DQ2 will not toggle if an address from a non-erasing
sector is consecutively read. This allows the user to determine which sectors are erasing.
Once erase suspend is entered address sensitivity still applies. If the address of a non-erasing sector (one
available for read) is provided, then stored data can be read from the device. If the address of an erasing sector
(one unavailable for read) is applied, the device will output its status bits.
Hardware Sequence Flags
DQ7
DQ6
DQ5
DQ3
DQ2
DQ1*3
DQ7
Toggle
0
0
1
0
0
Toggle
0
1
Toggle*1
N/A
Program-Suspend-Read
(Program Suspended Sector)
Data
Data
Data
Data
Data
Data
Program-Suspend-Read
(Non-Program Suspended Sector)
Data
Data
Data
Data
Data
Data
1
1
0
0
Toggle*1
N/A
Erase-Suspend-Read
(Non-Erase Suspended Sector)
Data
Data
Data
Data
Data
Data
Erase-Suspend-Program
(Non-Erase Suspended Sector)
DQ7
Toggle
0
0
1*2
N/A
DQ7
Toggle
1
0
1
N/A
0
Toggle
1
1
N/A
N/A
DQ7
Toggle
1
0
N/A
N/A
BUSY State
DQ7
Toggle
0
N/A
N/A
0
Exceeded Timing Limits
DQ7
Toggle
1
N/A
N/A
0
ABORT State
N/A
Toggle
0
N/A
N/A
1
Status
Embedded Program Algorithm
Embedded Erase Algorithm
In
Progress
Program
Suspend
Mode
Erase-Suspend-Read
(Erase Suspended Sector)
Erase
Suspend
Mode
Embedded Program Algorithm
Exceeded Embedded Erase Algorithm
Time
Erase
Erase-Suspend-Program
Limits
Suspend
(Non-Erase Suspended Sector)
Mode
Write to
Buffer*4
*1 : Successive reads from the erasing or erase-suspend sector will cause DQ2 to toggle.
*2 : Reading from non-erase suspend sector address will indicate logic “1” at the DQ2 bit.
*3 : DQ1 indicates the Write-to-Buffer ABORT status during Write-Buffer-Programming operations.
*4 : The Data Polling algorithm detailed in “Data Polling Algorithm” in ■FLOW CHART should be used for WriteBuffer-Programming operations. Note that DQ7 during Write-Buffer-Programming indicates the data-bar for
DQ7 data for the LAST LOADED WRITE-BUFFER ADDRESS location.
31
MBM29PL32TM/BM90/10
DQ7
Data Polling
The devices feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in
progress or completed. During the Embedded Program Algorithm, an attempt to read devices will produce
reverse data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to read the
device will produce true data last written to DQ7. During the Embedded Erase Algorithm, an attempt to read the
device will produce a “0” at the DQ7 output. Upon completion of the Embedded Erase Algorithm, an attempt to
read device will produce a “1” at the DQ7 output. The flowchart for Data Polling (DQ7) is shown in “Data Polling
Algorithm” in ■FLOW CHART.
For programming, the Data Polling is valid after the rising edge of fourth write pulse in the four write pulse
sequence.
For chip erase and sector erase, the Data Polling is valid after the rising edge of the sixth write pulse in the six
write pulse sequence. Data Polling must be performed at sector addresses of sectors being erased, not protected
sectors. Otherwise, the status may become invalid.
If a program address falls within a protected sector, Data polling on DQ7 is active for approximately 1 µs, then
the device returns to read mode. After an erase command sequence is written, if all sectors selected for erasing
are protected, Data Polling on DQ7 is active for approximately 100 µs, then the device returns to read mode. If
not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected.
Once the Embedded Algorithm operation is close to being completed, the device data pins (DQ7) may change
asynchronously while the output enable (OE) is asserted low. This means that the device is driving status
information on DQ7 at one instant of time, and then that byte’s valid data the next. Depending on when the system
samples the DQ7 output, it may read the status or valid data. Even if the device completes the Embedded
Algorithm operation and DQ7 has a valid data, the data outputs on DQ6 to DQ0 may still be invalid. The valid data
on DQ7 to DQ0 will be read on the successive read attempts.
The Data Polling feature is active only during the Embedded Programming Algorithm, Embedded Erase Algorithm, Erace Suspendmode or sector erase time-out.
See “Data Polling during Embedded Algorithm Operation Timing Diagram” in ■SWITCHING WAVEFORM for
the Data Polling timing specifications and diagram.
DQ6
Toggle Bit I
The device also feature the “Toggle Bit I” as a method to indicate to the host system that the Embedded Algorithms
are in progress or completed.
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (CE or OE toggling) data
from the devices will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase
Algorithm cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts.
During programming, the Toggle Bit I is valid after the rising edge of the fourth write pulse in the four write pulse
sequences. For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth write pulse
in the six write pulse sequences. The Toggle Bit I is active during the sector time out.
In programm operation, if the sector being written to is protected, the Toggle bit will toggle for about 1 µs and
then stop toggling with the data unchanged. In erase, the device will erase all the selected sectors except for
the protected ones. If all selected sectors are protected, the chip will toggle the Toggle bit for about 100 µs and
then drop back into read mode, having data kept remained.
Either CE or OE toggling will cause the DQ6 to toggle. See “ Toggle Bit l Timing Diagramduring Embedded
Algorithm Operations” in ■SWITCHING WAVEFORM for the Toggle Bit I timing specifications and diagram.
32
MBM29PL32TM/BM90/10
DQ5
Exceeded Timing Limits
DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under
these conditions DQ5 will produce a “1”. This is a failure condition indicating that the program or erase cycle was
not successfully completed. Data Polling is the only operating function of the device under this condition. The
CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE
pins will control the output disable functions as described in “MBM29PL32TM/BM User Bus Operations (Word
Mode : BYTE = VIH)” and “MBM29PL32TM/BM User Bus Operations (Byte Mode : BYTE = VIL)” in ■DEVICE
BUS OPERATION.
The DQ5 failure condition may also appear if a user tries to program a non blank location without pre-erase. In
this case the device locks out and never completes the Embedded Algorithm operation. Hence, the system never
reads a valid data on DQ7 bit and DQ6 never stop toggling. Once the device has exceeded timing limits, the DQ5
bit will indicate a “1”. Note that this is not a device failure condition since the device was incorrectly used. If this
occurs, reset the device with command sequence.
DQ3
Sector Erase Timer
After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ3 will
remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase
command sequence.
If Data Polling or the Toggle Bit I indicates a valid erase command has been written, DQ3 may be used to
determine whether the sector erase timer window is still open. If DQ3 is “1” the internally controlled erase cycle
has begun. If DQ3 is “0”, the device will accept additional sector erase commands. To insure the command has
been accepted, the system software should check the status of DQ3 prior to and following each subsequent
Sector Erase command. If DQ3 were high on the second status check, the command may not have been accepted.
See “Hardware Sequence Flags”.
DQ2
Toggle Bit II
This Toggle bit II, along with DQ6, can be used to determine whether the devices are in the Embedded Erase
Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the
devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause
DQ2 to toggle. When the device is in the erase-suspended-program mode, successive reads from the non-erase
suspended sector will indicate a logic “1” at the DQ2 bit.
DQ6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend
Program operation is in progress. The behavior of these two status bits, along with that of DQ7, is summarized
as follows:
For example, DQ2 and DQ6 can be used together to determine if the erase-suspend-read mode is in progress.
(DQ2 toggles while DQ6 does not.) See also “Hardware Sequence Flags” and “DQ2 vs. DQ6” in ■SWITCHING
WAVEFORM.
Furthermore, DQ2 can also be used to determine which sector is being erased. At the erase mode, DQ2 toggles
if this bit is read from an erasing sector.
33
MBM29PL32TM/BM90/10
Reading Toggle Bits DQ6 / DQ2
Whenever the system initially begins reading Toggle bit status, it must read DQ7 to DQ0 at least twice in a row
to determine whether a Toggle bit is toggling. Typically a system would note and store the value of the Toggle
bit after the first read. After the second read, the system would compare the new value of the Toggle bit with the
first. If the Toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on DQ7 to DQ0 on the following read cycle.
However, if, after the initial two read cycles, the system determines that the Toggle bit is still toggling, the system
also should note whether the value of DQ5 is high (see the section on DQ5) . If it is, the system should then
determine again whether the Toggle bit is toggling, since the Toggle bit may have stopped toggling just as DQ5
went high. If the Toggle bit is no longer toggling, the device has successfully completed the program or erase
operation. If it is still toggling, the device did not complete the operation successfully, and the system must write
the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the Toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the Toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system
tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the
status of the operation. (Refer to “Toggle Bit Algorithm” in ■FLOW CHART.)
Toggle Bit Status
DQ7
DQ6
DQ2
DQ7
Toggle
1
Erase
0
Toggle
Toggle *1
Erase-Suspend-Read
(Erase-Suspended Sector)
1
1
Toggle *1
DQ7
Toggle
1 *2
Mode
Program
Erase-Suspend-Program
*1 : Successive reads from the erasing or erase-suspend sector will cause DQ2 to toggle.
*2 : Reading from the non-erase suspend sector address will indicate logic “1” at the DQ2 bit.
DQ1
Write-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1 produces a "1".
The system must issue the Write-to-Buffer-Abort-Reset command sequence to return the device to reading array
data. See "Write Buffer Programming Operations" section for more details.
RY/BY
Ready/Busy
The device provides a RY/BY open-drain output pin to indicate to the host system that the Embedded Algorithms
are either in progress or has been completed. If the output is low, the device is busy with either a program or
erase operation. If the output is high, the device is ready to accept any read/write or erase operation. If the
device is placed in an Erase Suspend mode, the RY/BY output will be high, by means of connecting with a pullup resister to VCC.
During programming, the RY/BY pin is driven low after the rising edge of the fourth WE pulse. During an erase
operation, the RY/BY pin is driven low after the rising edge of the sixth WE pulse. The RY/BY pin will indicate a
busy condition during the RESET pulse. See “RY/BY Timing Diagram during Program/Erase Operation Timing
Diagram” and “RESET Timing Diagram ( During Embedded Algorithms )” in ■SWITCHING WAVEFORM for a
detailed timing diagram. The RY/BY pin is pulled high in standby mode.
Since this is an open-drain output, RY/BY pins can be tied together in parallel with a pull-up resistor to VCC.
34
MBM29PL32TM/BM90/10
Word/Byte Configuration
BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the device. When this pin is driven high, the
device operates in the word (16-bit) mode. Data is read and programmed at DQ15 to DQ0. When this pin is driven
low, the device operates in byte (8-bit) mode. In this mode, DQ15/A-1 pin becomes the lowest address bit, and
DQ14 to DQ8 bits are tri-stated. However, the command bus cycle is always an 8-bit operation and hence commands are written at DQ7 to DQ0 and DQ15 to DQ8 bits are ignored.
Data Protection
The device is designed to offer protection against accidental erasure or programming caused by spurious system
level signals that may exist during power transitions. During power up the device automatically reset the internal
state machine in Read mode. Also, with its control register architecture, alteration of memory contents only
occurs after successful completion of specific multi-bus cycle command sequences.
The device also incorporates several features to prevent inadvertent write cycles resulting form VCC power-up
and power-down transitions or system noise.
(1) Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less
than VLKO. If VCC < VLKO, the command register is disabled and all internal program/erase circuits are disabled.
Under this condition, the device will reset to the read mode. Subsequent writes will be ignored until the VCC level
is greater than VLKO. It is the user’s responsibility to ensure that the control pins are logically correct to prevent
unintentional writes when VCC is above VLKO.
If Embedded Erase Algorithm is interrupted, the intervened erasing sector(s) is(are) not valid.
(2) Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE, CE, or WE will not initiate a write cycle.
(3) Logical Inhibit
Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write, CE and WE must
be a logical zero while OE is a logical one.
(4) Power-up Write Inhibit
Power-up of the devices with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to read mode on power-up.
(5) Sector Protection
Device user is able to protect each sector group individually to store and protect data. Protection circuit voids
both write and erase commands that are addressed to protected sectors.
Any commands to write or erase addressed to protected sector are ignored .
35
MBM29PL32TM/BM90/10
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Symbol
Storage Temperature
Max
Tstg
–55
+125
°C
TA
–20
+85
°C
VIN, VOUT
–0.5
VCC +0.5
V
VCC
–0.5
+4.0
V
VIN
–0.5
+12.5
V
VACC
–0.5
+12.5
V
Ambient Temperature with Power Applied
Voltage with Respect to Ground All Pins Except
A9, OE, and RESET *1,*2
Power Supply Voltage *1
1, 3
Input Voltage A9, OE, and RESET * *
Input Voltage WP/ACC *1,*3
Unit
Min
*1 : Voltage is defined on the basis of VSS = GND = 0 V.
*2 : Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may undershoot
VSS to –0.2 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage
transitions, input or I/O pins may overshoot to VCC +2.0 V for periods of up to 20 ns
*3 : Minimum DC input voltage is –0.5V. During voltage transitions, these pins may undershoot VSS to –0.2 V for
periods of up to 20 ns.Voltage difference between input and supply voltage ( VIN–VCC) dose not exceed to
+9.0 V. Maximum DC input voltage is +12.5 V which may overshoot to +14.0 V for periods of up to 20 ns .
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Ambient Temperature
Symbol
90
10
VCC Supply Voltage *
TA
VCC
Value
Min
Max
–20
+70
–20
+85
+3.0
+3.6
Unit
°C
V
* : Voltage is defined on the basis of VSS = GND = 0V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
36
MBM29PL32TM/BM90/10
■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT
+0.6 V
20 ns
20 ns
–0.5 V
–2.0 V
20 ns
Maximum Undershoot Waveform
20 ns
VCC +2.0 V
VCC +0.5 V
0.7 × VCC
20 ns
20 ns
Maximum Overshoot Waveform 1
20 ns
+14.0 V
+12.5 V
VCC +0.5 V
20 ns
20 ns
Note: This waveform is applied for A9, OE, RESET, and ACC.
Maximum Overshoot Waveform 2
37
MBM29PL32TM/BM90/10
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Symbol
Conditions
Typ
Max
–2.0
—
+2.0
–1.0
—
+1.0
–1.0
—
+1.0
µA
—
—
35
µA
—
18
20
—
16
20
—
35
50
—
35
50
VIN = VSS to VCC,
VCC = VCC Max
Output Leakage Current
ILO
VOUT = VSS to VCC, VCC = VCC Max
A9, OE, RESET Inputs Leakage
Current
ILIT
VCC = VCC Max,
A9, OE, RESET = 12.5 V
CE = VIL, OE = VIH, Word
f = 5 MHz
Byte
CE = VIL, OE = VIH, Word
f = 10 MHz
Byte
µA
mA
VCC Active Current
(Intra-Page Read ) *2
ICC2
CE = VIL, OE = VIH, tPRC = 25ns,
4-Word
—
10
20
mA
VCC Active Current
(Program / Erase) *2,*3
ICC3
CE = VIL, OE = VIH
—
50
60
mA
VCC Standby Current *2
ICC4
CE = VCC ±0.3 V,
RESET = VCC ±0.3 V,
OE = VIH, WP/ACC = VCC ±0.3 V
—
1
5
µA
VCC Reset Current *2
ICC5
RESET = VCC ±0.3 V,
WP/ACC = VCC ±0.3 V
—
1
5
µA
VCC Automatic Sleep Current *4
ICC6
CE = VSS ±0.3 V,
RESET = VCC ±0.3 V,
VIN = VCC ±0.3V or Vss ±0.3V,
WP/ACC = VCC ±0.3 V
—
1
5
µA
VCC Active Current
(Erase-Suspend-Program) *2
ICC7
CE = VIL, OE = VIH
—
50
60
mA
—
20
IACC
CE = VIL, OE = VIH, WP/ACC pin
Vcc = Vcc Max,
WP/ACC =VACC
Vcc Pin
Max
—
ACC Accelerated Program
Current
—
—
60
Input Low Level
VIL
—
–0.5
—
0.6
V
Input High Level
VIH
—
0.7×VCC
—
VCC + 0.3
V
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration
mA
VACC
VCC = 3.0 V to 3.6 V
11.5
12.0
12.5
V
Voltage for Autoselect, and
Temporary Sector Unprotected
VID
VCC = 3.0 V to 3.6 V
11.5
12.0
12.5
V
Output Low Voltage Level
VOL
IOL = 4.0 mA, VCC = VCC Min
—
—
0.45
V
Output High Voltage Level
VOH
IOH = –2.0 mA, VCC = VCC Min
0.85×VCC
—
—
V
Low VCC Lock-Out Voltage
VLKO
2.3
—
2.5
V
—
*1 : The lCC current listed includes both the DC operating current and the frequency dependent component.
*2 : Maximum ICC values are tested with VCC = VCC Max
*3 : ICC active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
*4 : Automatic sleep mode enables the low power mode when address remain stable for tACC + 30 ns.
38
Unit
WP/ACC pin
ILI
ICC1
Min
Others
Input Leakage Current
VCC Active Current
(Read ) *1,*2
Value
MBM29PL32TM/BM90/10
2. AC Characteristics
• Read Only Operations Characteristics
Symbols
Parameter
Value*
Condition
JEDEC Standard
90
10
Unit
Min
Max
Min
Max
90

100

ns
Read Cycle Time
tAVAV
tRC
Address to Output Delay
tAVQV
tACC
CE = VIL,
OE = VIL

90

100
ns
Chip Enable to Output Delay
tELQV
tCE
OE = VIL

90

100
ns
Page Read Cycle Time
—
tPRC
25

30

ns
Page Address to Output Delay
—
tPACC

25

30
ns
Output Enable to Output Delay
tGLQV
tOE
—

25

30
ns
Chip Enable to Output High-Z
tEHQZ
tDF
—

25

30
ns
—
tOEH
—
0

0

ns
—
10

10

ns
Output Enable to Output High-Z
tGHQZ
tDF
—

25

30
ns
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
tAXQX
tOH
—
0

0

ns
—
tREADY
—

20

20
µs
Output Enable Read
Hold Time
Toggle and Data Polling
RESET Pin Low to Read Mode
—
—
CE = VIL,
OE = VIL
* : Test Conditions :
Output Load
: 1 TTL gate and 30 pF
Input rise and fall times : 5 ns
Input pulse levels
: 0.0 V or VCC
Timing measurement reference level
Input : VCC / 2
Output : VCC / 2
3.3 V
Diode = 1N3064
or Equivalent
2.7 kΩ
Device
Under
Test
6.2 kΩ
CL
Diode = 1N3064
or Equivalent
Test Conditions
39
MBM29PL32TM/BM90/10
• Write (Erase/Program) Operations
Value
Symbol
Parameter
JEDEC Standard
90
10
Unit
Min
Typ
Max
Min
Typ
Max
Write Cycle Time
tAVAV
tWC
90


100


ns
Address Setup Time
tAVWL
tAS
0


0


ns
—
tASO
15


15


ns
tWLAX
tAH
45


45


ns
—
tAHT
0


0


ns
Data Setup Time
tDVWH
tDS
35


35


ns
Data Hold Time
tWHDX
tDH
0


0


ns
OE Setup Time
—
tOES
0


0


ns
CE High During Toggle Bit Polling
—
tCEPH
20


20


ns
OE High During Toggle Bit Polling
—
tOEPH
20


20


ns
Read Recover Time Before Write
(OE High to WE Low)
tGHWL
tGHWL
0


0


ns
Read Recover Time Before Write
(OE High to CE Low)
tGHEL
tGHEL
0


0


ns
CE Setup Time
tELWL
tCS
0


0


ns
WE Setup Time
tWLEL
tWS
0


0
CE Hold Time
tWHEH
tCH
0


0


ns
WE Hold Time
tEHWH
tWH
0


0


ns
CE Pulse Width
tELEH
tCP
35


35


ns
Write Pulse Width
tWLWH
tWP
35


35


ns
CE Pulse Width High
tEHEL
tCPH
25


25


ns
Write Pulse Width High
tWHWL
tWPH
30


30


ns
Effective Page
Programming Time
Per Word
(Write Buffer Programming)
tWHWH1
tWHWH1

23.5


23.5

µs

100


100

µs
Address Setup Time to OE Low During
Toggle Bit Polling
Address Hold Time
Address Hold Time from CE or OE High
During Toggle Bit Polling
Programming Time
Word
ns
tWHWH2
tWHWH2

1.0


1.0

s
VCC Setup Time
—
tVCS
50


50


µs
Recovery Time From RY/BY
—
tPB
0


0


ns
Erase/Program Valid to RY/BY Delay
—
tBUSY


90


90
ns
Rise Time to V *
—
tVIDR
500


500


ns
Rise Time to VACC *3
—
tVACCR
500


500


ns
Voltage Transition Time *2
—
tVLHT
4


4


µs
Sector Erase Operation *
1
ID 2
(Continued)
40
MBM29PL32TM/BM90/10
(Continued)
Value
Symbol
Parameter
JEDEC Standard
90
10
Unit
Min
Typ
Max
Min
Typ
Max
—
tWPP
100


100


µs
2
—
tOESP
4


4


µs
2
CE Setup Time to WE Active *
—
tCSP
4


4


µs
RESET Pulse Width
—
tRP
500


500


ns
RESET High Time Before Read
—
tRH
100


100


ns
Delay Time from Embedded Output
Enable
—
tEOE


90


100
ns
Erase Time-out Time
—
tTOW
50


50


µs
Erase Suspend Transition Time
—
tSPD


20


20
µs
Write Pulse Width *2
OE Setup Time to WE Active *
*1 : This does not include the preprogramming time.
*2 : This timing is for Sector Group Protection operation.
*3 : This timing is for Accelerated Program operation.
41
MBM29PL32TM/BM90/10
■ ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Unit
Remarks
15
s
Excludes programming time prior to
erasure
100
3000
µs
—
23.5
—
µs
Chip Programming Time
—
—
300
s
Absolute Maximum
Programming Time (16 words)
—
—
6
ms
100,000
—
—
cycle
Min
Typ
Max
Sector Erase Time
—
1
Programming Time
—
Effective Page Programming
Time
(Write Buffer Programming)
Erase/Program Cycle
Excludes system-level overhead
Non programming within the same
page
—
■ TSOP (1) PIN CAPACITANCE
Value
Parameter
Input Capacitance
Symbol
CIN
Test Setup
Unit
Min
Typ
Max
VIN = 0
—
8
10
pF
Output Capacitance
COUT
VOUT = 0
—
8.5
12
pF
Control Pin Capacitance
CIN2
VIN = 0
—
8
10
pF
RESET pin and WP/ACC Pin
Capacitance
CIN3
VIN = 0
—
20
25
pF
Notes : • Test conditions TA = +25°C, f = 1.0 MHz
• DQ15/A-1 pin capacitance is stipulated by output capacitance.
■ FBGA PIN CAPACITANCE
Value
Parameter
Input Capacitance
Symbol
CIN
Test Setup
Typ
Max
VIN = 0
—
8
10
pF
Output Capacitance
COUT
VOUT = 0
—
8.5
12
pF
Control Pin Capacitance
CIN2
VIN = 0
—
8
10
pF
RESET pin and WP/ACC Pin
Capacitance
CIN3
VIN = 0
—
15
20
pF
Notes : • Test conditions TA = +25°C, f = 1.0 MHz
• DQ15/A-1 pin capacitance is stipulated by output capacitance.
42
Unit
Min
MBM29PL32TM/BM90/10
■ SWITCHING WAVEFORMS
• Key to Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Must Be
Steady
Will Be
Steady
May
Change
from H to L
Will Be
Changing
from H to L
May
Change
from L to H
Will Be
Changing
from L to H
“H” or “L”
Any Change
Permitted
Changing
State
Unknown
Does Not
Apply
Center Line is
HighImpedance
“Off” State
tRC
Address
Address Stable
tACC
CE
tOE
tDF
OE
tOEH
WE
tCE
Data
High-Z
tOH
Output Valid
High-Z
Read Operation Timing Diagram
43
MBM29PL32TM/BM90/10
A20 to A2
Address Valid
A1 to A0
(A-1)
Aa
Ab
Ac
tRC
tPRC
tACC
CE
tCE
OE
tOEH
tOE
tDF
tPACC
WE
tOH
High-Z
Data
Da
tPACC
tOH
Db
tOH
Dc
Page Read Operation Timing Diagram
tRC
Address
Address Stable
tACC
CE
tRH
tRP
tRH
tCE
RESET
tOH
Data
High-Z
Output Valid
Hardware Reset/Read Operation Timing Diagram
44
MBM29PL32TM/BM90/10
3rd Bus Cycle
Data Polling
555h
Address
PA
tWC
tAS
PA
tRC
tAH
CE
tCH
tCS
tCE
OE
tGHWL
tWP
tWPH
tOE
tWHWH1
WE
tDS
Data
A0h
tOH
tDF
tDH
PD
DQ7
DOUT
DOUT
Notes : • PA is address of the memory location to be programmed.
• PD is data to be programmed at word address.
• DQ7 is the output of the complement of the data written to the device.
• DOUT is the output of the data written to the device.
• Figure indicates the last two bus cycles out of four bus cycle sequence.
Alternate WE Controlled Program Operation Timing Diagram
45
MBM29PL32TM/BM90/10
3rd Bus Cycle
Address
Data Polling
PA
555h
tWC
tAS
PA
tAH
WE
tWS
tWH
OE
tGHEL
tCP
tCPH
tWHWH1
CE
tDS
tDH
Data
A0h
PD
DQ 7
D OUT
Notes : • PA is address of the memory location to be programmed.
• PD is data to be programmed at word address.
• DQ7 is the output of the complement of the data written to the device.
• DOUT is the output of the data written to the device.
• Figure indicates the last two bus cycles out of four bus cycle sequence.
Alternate CE Controlled Program Operation Timing Diagram
46
MBM29PL32TM/BM90/10
555h
Address
tWC
2AAh
tAS
555h
555h
2AAh
SA*
SA*
tAH
CE
tCS
tCH
OE
tGHWL
tWP
tWPH
tDS
tDH
tTOW
WE
AAh
10h for Chip Erase
55h
80h
AAh
55h
Data
10h/
30h
30h
tBUSY
RY/BY
tVCS
VCC
* : SA is the sector address for Sector Erase. Address = 555h (Word), AAAh (Byte) for Chip Erase.
Chip/Sector Erase Operation Timing Diagram
47
MBM29PL32TM/BM90/10
XXXh
Address
tWC
CE
tCS
tCH
tWP
WE
tDS
tSPD
B0h
Data
RY/BY
Erase Suspend Operation Timing Diagram
48
MBM29PL32TM/BM90/10
VA
Address
CE
tCH
tDF
tOE
OE
tOEH
WE
4 µs
tCE
*
Data
DQ7
DQ7
DQ7 =
Valid Data
High-Z
tWHWH1 or 2
DQ6 to DQ0
DQ6 to DQ0 =
Output Flag
Data
tBUSY
DQ6 to DQ0
Valid Data
High-Z
tEOE
RY/BY
* : DQ7 = Valid Data (The device has completed the Embedded operation.)
Note : When checking Hardware Sequence Flags during program operations, it should be checked
4 µs after issuing program command.
Data Polling during Embedded Algorithm Operation Timing Diagram
49
MBM29PL32TM/BM90/10
Address
tAHT tASO
tAHT tAS
CE
tCEPH
WE
tOEPH
4 µs
tOEH
OE
tOE
tDH
DQ6/DQ2
tCE
Toggle
Data
Data
Toggle
Data
*
Toggle
Data
Stop
Toggling
Output
Valid
tBUSY
RY/BY
* : DQ6 stops toggling (The device has completed the Embedded operation).
Note : When checking Hardware Sequence Flags during program operations, it should be checked
4 µs after issuing program command.
Toggle Bit l Timing Diagram during Embedded Algorithm Operations
E nter
E m bedded
E rasing
WE
E rase
S uspend
E rase
E nter E rase
S uspend P rogram
E rase S uspend
R ead
E rase
S uspend
P rogram
DQ6
DQ2*
T oggle
D Q 2 and D Q 6
w ith O E or C E
* : DQ2 is read from the erase-suspended sector.
DQ2 vs. DQ6
50
E rase
R esum e
E rase S uspend
R ead
E rase
E rase
C om plete
MBM29PL32TM/BM90/10
CE
Rising edge of the last WE signal
WE
Entire programming
or erase operations
RY/BY
tBUSY
RY/BY Timing Diagram during Program/Erase Operation Timing Diagram
CE, OE
tRH
RESET
tRP
tREADY
RESET Timing Diagram ( Not during Embedded Algorithms )
51
MBM29PL32TM/BM90/10
WE
RESET
tRP
tRB
RY/BY
tREADY
RESET Timing Diagram ( During Embedded Algorithms )
52
MBM29PL32TM/BM90/10
A20, A19, A18, A17, A16
A15, A14, A13, A12
SGAX
SGAY
A6, A3, A2, A0
A1
VID
VIH
A9
tVLHT
VID
VIH
OE
tVLHT
tVLHT
tVLHT
tWPP
WE
tOESP
tCSP
CE
Data
01h
tVCS
tOE
VCC
SGAX : Sector Group Address to be protected
SGAY : Next Sector Group Address to be protected
Sector Group Protection Timing Diagram
53
MBM29PL32TM/BM90/10
VCC
tVCS tVIDR
tVLHT
VID
VSS, VIL or VIH
RESET
CE
WE
tVLHT
Program or Erase Command Sequence
RY/BY
Unprotection period
Temporary Sector Group Unprotection Timing Diagram
54
tVLHT
MBM29PL32TM/BM90/10
VCC
tVCS
RESET
tVLHT
tVIDR
Address
SGAX
SGAX
SGAY
A6, A3, A2, A0
A1
CE
OE
TIME-OUT
WE
Data
60h
60h
40h
01h
60h
tOE
SGAX: Sector Group Address to be protected
SGAY : Next Sector Group Address to be protected
TIME-OUT : Time-Out window = 250 µs (Min)
Extended Sector Group Protection Timing Diagram
55
MBM29PL32TM/BM90/10
VCC
tVACCR
tVCS
tVLHT
VACC
ACC
CE
WE
tVLHT
Program Command Sequence
Acceleration period
Accelerated Program Timing Diagram
56
tVLHT
MBM29PL32TM/BM90/10
■ FLOW CHART
EMBEDDED ALGORITHMS
Start
Write Program
Command Sequence
(See Below)
Data Polling
No
Increment Address
No
Verify Data
?
Yes
Embedded
Program
Algorithm
in progress
Last Address
?
Yes
Programming Completed
Program Command Sequence (Address/Command):
555h/AAh
2AAh/55h
555h/A0h
Program Address/Program Data
Note : The sequence is applied for Word ( ×16 ) mode.
The addresses differ from Byte ( × 8 ) mode.
Embedded ProgramTM Algorithm
57
MBM29PL32TM/BM90/10
EMBEDDED ALGORITHMS
Start
Write Erase
Command Sequence
(See Below)
Data Polling
No
Data = FFh
?
Yes
Embedded
Erase
Algorithm
in progress
Erasure Completed
Chip Erase Command Sequence
(Address/Command):
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command):
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
555h/80h
555h/80h
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
555h/10h
Sector Address
/30h
Sector Address
/30h
Sector Address
/30h
Note : The sequence is applied for Word ( ×16 ) mode.
The addresses differ from Byte ( × 8 ) mode.
Embedded EraseTM Algorithm
58
Additional sector
erase commands
are optional.
MBM29PL32TM/BM90/10
Start
Wait 4 µs after
issuing Program
Command
Read Byte
(DQ 7 to DQ 0)
Addr. = VA
DQ 7 = Data?
VA = Valid address for programming
= Any of the sector addresses within
the sector being erased during
sector erase or multiple sector
erases operation
= Any of the sector addresses within
the sector not being protected
during chip erase operation
Yes
No
No
DQ 5 = 1?
Yes
Read Byte
(DQ 7 to DQ 0)
Addr. = VA
DQ 7 = Data?
*
Yes
No
Fail
Pass
* : DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
Note : Data polling on sector-group protected sector may fail.
Data Polling Algorithm
59
MBM29PL32TM/BM90/10
Start
Wait 4 µs after
issuing Program
Command
Read DQ7 to DQ0
Addr. = "H" or "L"
Read DQ7 to DQ0
Addr. = "H" or "L"
DQ6 = Toggle
*1
*1
No
?
Yes
No
DQ5 = 1?
Yes
*1, *2
Read DQ7 to DQ0
Addr. = "H" or "L"
Read DQ7 to DQ0
Addr. = "H" or "L"
DQ6 = Toggle
?
Yes
No
Program/Erase
Operation Not
Complete.Write
Reset Command
Program/Erase
Operation
Complete
*1 : Read Toggle bit twice to determine whether it is toggling.
*2 : Recheck Toggle bit because it may stop toggling as DQ5 changes to “1”.
Toggle Bit Algorithm
60
MBM29PL32TM/BM90/10
Start
Setup Sector Group Addr.
(A20, A19, A18, A17, A16,
A15, A14, A13, A12)
PLSCNT = 1
OE = VID, A9 = VID
CE = VIL, RESET = VIH
A6 = A3 = A2 = A0 = VIL, A1 = VIH
Activate WE Pulse
Increment PLSCNT
Time out 100 µs
WE = VIH, CE = OE = VIL
(A9 should remain VID)
Read from Sector Group
Addr. = SGA, A1 = VIH
A6 = A3 = A2 = A0 = VIL
(
)*
No
PLSCNT = 25?
Yes
Remove VID from A9
Write Reset Command
No
Data = 01h?
Yes
Protect Another Sector
Group?
Yes
No
Device Failed
Remove VID from A9
Write Reset Command
Sector Group Protection
Completed
* : A-1 is VIL in Byte ( × 8 ) mode.
Sector Group Protection Algorithm
61
MBM29PL32TM/BM90/10
Start
RESET = VID
*1
Perform Erase or
Program Operations
RESET = VIH
Temporary Sector Group
Unprotection Completed
*2
*1 : All protected sector groups are unprotected.
*2 : All previously protected sector groups are protected.
Temporary Sector Group Unprotection Algorithm
62
MBM29PL32TM/BM90/10
Start
RESET = VID
Wait to 4 µs
Device is Operating in
Temporary Sector Group
Unprotection Mode
No
Extended Sector Group
Protection Entry?
Yes
To Setup Sector Group
Protection Write XXXh/60h
PLSCNT = 1
To Protect Sector Group
Write 60h to Sector Address
(A6 = A3 = A2 = A0 =VIL, A1 = VIH)
Time Out 250 µs
Increment PLSCNT
To Verify Sector Group Protection
Write 40h to Sector Address
(A6 = A3 = A2 = A0 =VIL, A1 = VIH)
Setup Next Sector Group
Address
Read from Sector Group
Address
(A6 = A3 = A2 = A0 =VIL, A1 = VIH)
No
No
PLSCNT = 25?
Yes
Data = 01h?
Yes
Remove VID from RESET
Write Reset Command
Yes
Protection Other Sector
Group?
No
Device Failed
Remove VID from RESET
Write Reset Command
Sector Group Protection
Completed
Extended Sector Group Protection Algorithm
63
MBM29PL32TM/BM90/10
FAST MODE ALGORITHM
Start
555h/AAh
Set Fast Mode
2AAh/55h
555h/20h
XXXh/A0h
Program Address/Program Data
Data Polling
Verify Data?
No
In Fast Program
Yes
Increment Address
No
Last Address
?
Yes
Programming Completed
XXXh/90h
Reset Fast Mode
XXXh/F0h
Notes : • The sequence is applied for Word ( ×16 ) mode.
• The addresses differ from Byte ( × 8 ) mode.
Embedded ProgramTM Algorithm for Fast Mode
64
MBM29PL32TM/BM90/10
■ ORDERING INFORMATION
Part No.
MBM29PL32TM90TN
MBM29PL32TM10TN
MBM29PL32TM90PBT
MBM29PL32TM10PBT
MBM29PL32BM90TN
Package
Access Time (ns)
48-pin, plastic TSOP (1)
(FPT-48P-M19)
(Normal Bend)
90 ns
48-ball, plastic FBGA
(BGA-48P-M20)
48-pin, plastic TSOP (1)
(FPT-48P-M19)
(Normal Bend)
MBM29PL32BM10TN
MBM29PL32BM90PBT
MBM29PL32BM10PBT
MBM29PL32TM/BM
48-ball, plastic FBGA
(BGA-48P-M20)
90
100 ns
Remarks
Top Sector
90 ns
100 ns
90 ns
100 ns
Bottom Sector
90 ns
100 ns
TN
PACKAGE TYPE
TN = 48-Pin Thin Small Outline Package
(TSOP(1) Standard Pinout)
PBT = 48-Ball Fine pitch Ball Grid Array
Package (FBGA)
SPEED OPTION
90 = 90 ns access time
10 = 100 ns access time
DEVICE NUMBER/DESCRIPTION
32 Mbit (4M × 8/2M × 16) MirrorFlash with Page Mode,
Boot Sector
3.0 V-only Read, Program, and Erase
65
MBM29PL32TM/BM90/10
■ PACKAGE DIMENSIONS
Note 1) * : Values do not include resin protrusion.
Resin protrusion and gate protrusion are +0.15(.006)Max(each side).
Note 2) Pins width and pins thickness include plating thickness.
Note 3) Pins width do not include tie bar cutting remainder.
48-pin plastic TSOP(1)
(FPT-48P-M19)
LEAD No.
1
48
INDEX
Details of "A" part
0.25(.010)
0~8˚
0.60±0.15
(.024±.006)
24
25
* 12.00±0.20
20.00±0.20
(.787±.008)
* 18.40±0.20
(.724±.008)
"A"
0.10(.004)
(.472±.008)
+0.10
1.10 –0.05
+.004
.043 –.002
(Mounting
height)
+0.03
0.17 –0.08
+.001
.007 –.003
C
0.10±0.05
(.004±.002)
(Stand off height)
0.50(.020)
0.22±0.05
(.009±.002)
0.10(.004)
M
2003 FUJITSU LIMITED F48029S-c-6-7
Dimensions in mm (inches)
Note : The values in parentheses are reference values.
(Continued)
66
MBM29PL32TM/BM90/10
(Continued)
48-ball plastic FBGA
(BGA-48P-M20)
+0.12
8.00±0.20(.315±.008)
+.003
1.08 –0.13 .043 –.005
(Mounting height)
0.38±0.10(.015±.004)
(Stand off)
5.60(.220)
0.80(.031)TYP
6
5
6.00±0.20
(.236±.008)
4
4.00(.157)
3
2
1
H
(INDEX AREA)
G
F
E
D
48-ø0.45±0.05
(48-ø.018±.002)
C
B
A
ø0.08(.003)
M
0.10(.004)
C
2003 FUJITSU LIMITED B48020S-c-2-2
Dimensions in mm (inches)
Note : The values in parentheses are reference values.
67
MBM29PL32TM/BM90/10
FUJITSU LIMITED
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