DIODES MBRM560

MBRM560
5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
NEW PRODUCT
Features
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
Low Reverse Current
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
E
A
G
P
3
J
B
1
·
·
·
A
4.03
4.09
B
6.40
6.61
G
D
K
C
PIN 3, BOTTOMSIDE
HEAT SINK
Pins 1 & 2 must be electrically
connected at the printed circuit board.
1.83 NOM
1.10
1.14
.178 NOM
5.01
5.17
J
4.37
4.43
L
PIN 2
.889 NOM
H
K
L
PIN 1
Note:
Max
E
2
C
Min
C
M
Case: POWERMITEâ3, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See Sheet 3
Weight: 0.072 grams (approx.)
Maximum Ratings
H
Dim
D
Mechanical Data
·
·
POWERMITEâ3
.178 NOM
.71
.77
M
.36
.46
P
1.73
1.83
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
VR(RMS)
42
V
IO
5
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
@ TC = 90°C
IFSM
100
A
Typical Thermal Resistance Junction to Soldering Point
RqJS
2.7
°C/W
Tj
-55 to +125
°C
TSTG
-55 to +150
°C
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(See also Figure 5)
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)R
60
¾
¾
V
IR = 0.2mA
Forward Voltage (Note 1)
VFM
¾
¾
¾
¾
0.65
0.56
0.74
0.64
0.69
0.60
0.78
0.68
V
IF = 5A, TJ = 25°C
IF = 5A, TJ = 125°C
IF = 8A, TJ = 25°C
IF = 8A, TJ = 125°C
Reverse Current (Note 1)
IRM
¾
¾
2
0.6
200
20
mA
mA
Characteristic
Reverse Breakdown Voltage (Note 1)
Notes:
Test Condition
TJ = 25°C, VR = 60V
TJ = 100°C, VR = 60V
1. Short duration test pulse used to minimize self-heating effect.
DS30299 Rev. 2 - 2
1 of 3
MBRM560
IR, INSTANTANEOUS REVERSE CURRENT (mA)
IF, INSTANTANEOUS FORWARD CURRENT (A)
10
Tj = 125°C
Tj = 100°C
1.0
Tj = 25°C
0.1
0.01
0
0.2
0.4
0.6
10,000
Tj = 125°C
1000
Tj = 100°C
100
Tj = 75°C
10
1.0
Tj = 25°C
0.1
20
10
0
0.8
VF, INSTANTANEOUS F0RWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
30
40
50
60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
1000
100
Single Half-Sine-Wave
(JEDEC Method)
TC = 90°C
CT, TOTAL CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
NEW PRODUCT
100
80
60
40
20
0
f = 1MHz
100
10
1
10
100
0
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
DS30299 Rev. 2 - 2
15
30
45
60
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance vs. Reverse Voltage
2 of 3
MBRM560
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF, DC FORWARD CURRENT (A)
NEW PRODUCT
7.5
6.0
Note 1
4.5
Note 2
3.0
1.5
Note 3
0
0
25
75
50
100
125
150
3.5
3.0
2.5
2.0
1.5
Note 3
1.0
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 DC Forward Current Derating
Notes:
0.5
0
0
7
4
1
2
5
3
6
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
1. TA = TSOLDERING POINT, RqJS = 2.7°C/W, RqSA = 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
100-130°C/W.
Ordering Information
Notes:
Note 2
(Note 4)
Device
Packaging
Shipping
MBRM560-13
POWERMITEâ3
5000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MBRM560
YYWW
MBRM560 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
POWERMITE is a registered trademark of Microsemi Corporation.
DS30299 Rev. 2 - 2
3 of 3
MBRM560