MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. Features http://onsemi.com MARKING DIAGRAM 6 SOT-363/SC-88/ SC70-6 CASE 419B 6 •hFE, 100-300 •Low VCE(sat), ≤ 0.4 V •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Available in 8 mm, 7-inch/3,000 Unit Tape and Reel •Pb-Free Packages are Available XX MG G 1 1 XX = MA for MBT3904DW1T1 MJ for MBT3904DW2T1 M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc 200 mAdc Collector Current - Continuous Electrostatic Discharge IC ESD Q1 (4) (5) (6) MBT3904DW1T1 STYLE 1 HBM Class 2 MM Class B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Q2 (3) (2) (1) Q2 Q1 THERAML CHARACTERISTICS Characteristic (4) (5) (6) Symbol Max Unit PD 150 mW MBT3904DW2T1 STYLE 27 Thermal Resistance, Junction-to-Ambient RqJA 833 °C/W ORDERING INFORMATION Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Total Package Dissipation (Note 1) TA = 25°C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. Device Package Shipping† MBT3904DW1T1 SOT-363 3000 Units/Reel MBT3904DW1T1G SOT-363 (Pb-Free) 3000 Units/Reel SOT-363 3000 Units/Reel MBT3904DW2T1G SOT-363 (Pb-Free) MBT3904DW2T1 3000 Units/Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 May, 2005 - Rev. 5 1 Publication Order Number: MBT3904DW1T1/D MBT3904DW1T1, MBT3904DW2T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 - 60 - 6.0 - - 50 - 50 40 70 100 60 30 300 - - 0.2 0.3 0.65 - 0.85 0.95 300 - - 4.0 - 8.0 1.0 2.0 10 12 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) NF 2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤2.0%. http://onsemi.com 2 MHz pF pF kW X 10- 4 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 - 5.0 4.0 - mmhos dB MBT3904DW1T1, MBT3904DW2T1 SWITCHING CHARACTERISTICS Symbol Min Max Delay Time (VCC = 3.0 Vdc, VBE = -0.5 Vdc) Characteristic td - 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr - 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts - 200 Fall Time (IB1 = IB2 = 1.0 mAdc) tf - 50 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 Unit ns ns +3 V +10.9 V 275 10 k 10 k 0 -0.5 V Cs < 4 pF* < 1 ns 1N916 -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 Cs < 4 pF* MBT3904DW1T1, MBT3904DW2T1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) VCC = 40 V IC/IB = 10 3000 7.0 Cibo 3.0 Cobo 2.0 1000 700 500 QT 300 200 QA 100 70 50 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 500 200 500 IC/IB = 10 100 70 tr @ VCC = 3.0 V 50 30 20 VCC = 40 V IC/IB = 10 300 200 t r, RISE TIME (ns) 300 200 TIME (ns) 1.0 REVERSE BIAS VOLTAGE (VOLTS) 40 V 100 70 50 30 20 15 V 10 7 5 10 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time IC/IB = 10 200 500 t′s = ts - 1/8 tf IB1 = IB2 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 t f , FALL TIME (ns) t s′ , STORAGE TIME (ns) IC/IB = 20 200 IC, COLLECTOR CURRENT (mA) 500 300 200 7 5 100 70 IC/IB = 20 50 IC/IB = 10 30 20 100 70 50 10 10 7 5 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 4 200 MBT3904DW1T1, MBT3904DW2T1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 SOURCE RESISTANCE = 500 W IC = 100 mA 2 0 0.1 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( m mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 11. Current Gain Figure 12. Output Admittance hre , VOLTAGE FEEDBACK RATIO (x 10 -4) h ie , INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 5 MBT3904DW1T1, MBT3904DW2T1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25°C VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 -55 °C TO +25°C -0.5 -55 °C TO +25°C -1.0 +25°C TO +125°C 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 1.0 qVB FOR VBE(sat) -1.5 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients http://onsemi.com 6 180 200 MBT3904DW1T1, MBT3904DW2T1 PACKAGE DIMENSIONS SOT-363/SC-88/SC70-6 CASE 419B-02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE -E1 2 3 b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 A3 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 C A A1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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