MMBT2907ALT1 General Purpose Transisters PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc Collector Current − Continuous 1 BASE 2 EMITTER Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM 3 1 THERMAL CHARACTERISTICS Characteristic 2 Symbol Max Unit 225 mW 1.8 mW/°C Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2F M SOT−23 (TO−236AB) CASE 318 STYLE 6 2F M = Device Code = Month Code ORDERING INFORMATION 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Package Shipping† SOT−23 3000 Units/Reel SOT−23 (Pb−Free) 3000 Units/Reel MMBT2907ALT3 SOT−23 3000 Units/Reel MMBT2907ALT3G SOT−23 (Pb−Free) 3000 Units/Reel Device MMBT2907ALT1 MMBT2907ALT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 December, 2004 − Rev. 4 1 Publication Order Number: MMBT2907ALT1/D MMBT2907ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −60 − −60 − −5.0 − − −50 − − −0.010 −10 − −50 75 100 100 100 50 − − − 300 − − − −0.4 −1.6 − − −1.3 −2.6 200 − − 8.0 − 30 ton − 45 td − 10 tr − 40 toff − 100 ts − 80 tf − 30 Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −10 Adc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 125°C) ICBO Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IBL Vdc Vdc Vdc nAdc Adc nAdc ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (IC = −500 mAdc, VCE = −10 Vdc) (Note 3) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −150 mAdc, IB = −15 mAdc) (Note 3) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS fT Current −Gain − Bandwidth Product (Notes 3, 4) (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo MHz pF SWITCHING CHARACTERISTICS Turn−On Time Delay Time (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) Rise Time Turn−Off Time Storage Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) Fall Time 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 ns MMBT2907ALT1 INPUT Zo = 50 PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns INPUT Zo = 50 PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns −30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns −6.0 V 1.0 k 1.0 k 0 50 −16 V +15 V −30 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 3 MMBT2907ALT1 TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = −1.0 V VCE = −10 V 2.0 TJ = 125°C 25°C 1.0 −55 °C 0.7 0.5 0.3 0.2 −0.1 −0.2 −0.3 −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 −500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain −1.0 −0.8 IC = −1.0 mA −10 mA −100 mA −500 mA −0.6 −0.4 −0.2 0 −0.005 −0.01 −0.02 −0.03 −0.05 −0.07 −0.1 −0.2 −0.3 −0.5 −0.7 −1.0 IB, BASE CURRENT (mA) −2.0 −3.0 −20 −30 −5.0 −7.0 −10 −50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = −30 V IC/IB = 10 TJ = 25°C tf 30 20 td @ VBE(off) = 0 V 3.0 −5.0 −7.0 −10 30 10 7.0 5.0 −5.0 −7.0 −10 2.0 V −20 −30 −50 −70 −100 IC, COLLECTOR CURRENT 100 70 50 t′s = ts − 1/8 tf 20 10 7.0 5.0 VCC = −30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 −200 −300 −500 Figure 5. Turn−On Time −20 −30 −50 −70 −100 −200 −300 −500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn−Off Time http://onsemi.com 4 MMBT2907ALT1 TYPICAL SMALL−SIGNAL Characteristics NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = −1.0 mA, Rs = 430 −500 A, Rs = 560 −50 A, Rs = 2.7 k −100 A, Rs = 1.6 k 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 C, CAPACITANCE (pF) IC = −50 A −100 A −500 A −1.0 mA 4.0 0 100 30 Ceb 10 7.0 Ccb 5.0 3.0 2.0 −0.1 6.0 2.0 −0.2 −0.3 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz 50 k 400 300 200 100 80 VCE = −20 V TJ = 25°C 60 40 30 20 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 −1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current−Gain − Bandwidth Product +0.5 −1.0 TJ = 25°C −0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) V, VOLTAGE (VOLTS) −0.8 VBE(on) @ VCE = −10 V −0.4 −0.2 RVC for VCE(sat) −0.5 −1.0 −1.5 RVB for VBE −2.0 VCE(sat) @ IC/IB = 10 0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −2.5 −0.1 −0.2 −0.5 −1.0 −2.0 −500 −5.0 −10 −20 −50 −100 −200 −500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients http://onsemi.com 5 MMBT2907ALT1 PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AK A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. MMBT2907ALT1/D